CN110644050A - Polycrystalline silicon wafer convenient to distinguish and preparation method thereof - Google Patents
Polycrystalline silicon wafer convenient to distinguish and preparation method thereof Download PDFInfo
- Publication number
- CN110644050A CN110644050A CN201910883813.2A CN201910883813A CN110644050A CN 110644050 A CN110644050 A CN 110644050A CN 201910883813 A CN201910883813 A CN 201910883813A CN 110644050 A CN110644050 A CN 110644050A
- Authority
- CN
- China
- Prior art keywords
- temperature
- silicon carbide
- slagging
- graphene
- sheath
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/02—Production of homogeneous polycrystalline material with defined structure directly from the solid state
Abstract
The invention discloses a preparation method of a polycrystalline silicon wafer convenient to distinguish, belonging to the technical field of polycrystalline silicon, comprising the following steps: preparing and selecting industrial silicon raw materials: choose aluminium alloy powder and carborundum for use, place it in proper order and mix at the blendor and make aluminium carborundum mixed powder, then graphite alkene ethanol dispersion atomizing sprays and mixes in adding aluminium carborundum mixed powder again, makes graphite alkene aluminium carborundum mixed dispersion, and the stoving generates graphite alkene reinforcing aluminium carborundum mixed powder at last, pickling: putting the graphene reinforced aluminum silicon carbide mixed powder into a reaction kettle filled with an inorganic acid solution at the temperature of 20-70 DEG C0C, treating for 5-10 h, then removing Ti and Fe through the processes of washing, separating, drying and the like, removing phosphorus impurities, and enabling the polycrystalline silicon wafer to have excellent fatigue resistance, meet the requirement of green metallurgy and be practicalThe existing industrial silicon refining outside the furnace saves energy and reduces emission, and can better distinguish silicon wafers for installation.
Description
Technical Field
The invention relates to the technical field of polycrystalline silicon, in particular to a polycrystalline silicon chip convenient to distinguish and a preparation method thereof.
Background
Solar energy is gradually applied to daily life of people as a new energy source, but with the emergence of solar energy, a large amount of silicon wafers are processed and produced, the existing silicon wafers are generally processed and produced by a metallurgical method, and the metallurgical method has the advantages of low cost, low energy consumption, high yield, low investment threshold and the like. However, the quality of silicon wafer finished products processed by different metallurgical methods is different in the process of producing the silicon wafer, and the front side and the back side of the processed silicon wafer are also inconvenient to distinguish. Therefore, a polycrystalline silicon wafer which is convenient to distinguish and a preparation method thereof are provided.
Disclosure of Invention
The invention aims to provide a polycrystalline silicon wafer convenient to distinguish and a preparation method thereof, so as to solve the problems in the background technology.
In order to achieve the purpose, the invention provides the following technical scheme: a preparation method of a polycrystalline silicon wafer convenient to distinguish comprises the following steps:
1) preparing and selecting industrial silicon raw materials: selecting aluminum alloy powder and silicon carbide, sequentially placing the aluminum alloy powder and the silicon carbide in a mixer for mixing to prepare aluminum silicon carbide mixed powder, then atomizing and spraying graphene ethanol dispersion liquid into the aluminum silicon carbide mixed powder for mixing again to prepare graphene aluminum silicon carbide mixed dispersion liquid, and finally drying to generate graphene reinforced aluminum silicon carbide mixed powder;
2) acid washing: putting the graphene reinforced aluminum silicon carbide mixed powder into a reaction kettle filled with an inorganic acid solution at the temperature of 20-70 DEG C0C, treating for 5-10 h, then washing with water, separating, drying and the like to remove Ti and Fe, and simultaneously removing phosphorus impurities;
3) oxidation refining: introducing protective gas, high-purity argon and chlorine taking nitrogen as a carrier into the pickled graphene-reinforced aluminum silicon carbide, and then carrying out slagging refining on the graphene-reinforced aluminum silicon carbide in a low-temperature slagging stage, a medium-temperature slagging stage and a high-temperature slagging stage in sequence;
4) and (3) vacuum treatment: placing the oxidized and refined graphene reinforced aluminum silicon carbide in a sheath for vacuum degassing treatment, performing microwave heating on the sheath, keeping the external refining temperature of the graphene reinforced aluminum silicon carbide, performing external blowing and slagging refining for 0.5-10 h, performing slag-silicon separation after the external refining is finished, keeping the temperature and cooling to room temperature until the vacuum degree of the sheath reaches 4.0 x 10 < -3 > Pa, and taking out the sheath;
5) solidification and refining: and taking out the vacuum-treated sheath, welding and sealing, performing hot isostatic pressing forming treatment on the sheath, machining to obtain a round billet ingot, thus obtaining a polycrystalline silicon wafer, and finally bonding core plates with different colors on the front and back surfaces of the polycrystalline silicon wafer.
Further, the graphene ethanol dispersion liquid comprises 1000g of graphene, and 1000g of graphene is uniformly dispersed into 1000ml of absolute ethanol.
Furthermore, the temperature in the low-temperature slagging stage is 1450 ℃, the slagging agent is calcium chloride and anhydrous sodium metasilicate, the temperature in the medium-temperature slagging stage is 1550 ℃, the slagging agent is calcium silicate and fluorite, the temperature in the high-temperature slagging stage is 1600 ℃, and the slagging agent is calcium silicate and aluminum silicate.
Further, the sheath is an aluminum alloy sheath, and the dimension of the sheath is phi 100 multiplied by 200 mm.
Furthermore, an electron beam melting method is adopted for removing phosphorus impurities.
Further, the mass ratio of calcium chloride to anhydrous sodium metasilicate is 1:1, the mass ratio of calcium silicate to fluorite is 9:1, and the mass ratio of calcium silicate to aluminum silicate is 9: 1.
Compared with the prior art, the invention has the beneficial effects that:
1. when the polycrystalline silicon is prepared, the graphene ethanol dispersion liquid is mixed with the silicon powder, and the formed polycrystalline silicon wafer has the advantages of small density, light weight, high plasticity, high toughness, high tensile strength and the like, has excellent fatigue resistance and surface condition, and improves the subsequent machining of materials;
2. in the vacuum treatment process, the industrial silicon is selected for refining outside the furnace, so that secondary pollution is avoided during preparation of the polycrystalline silicon slice, the environmental load is small, the clean production can be achieved, the requirement of green metallurgy is met, and the energy conservation and emission reduction during the refining of the industrial silicon are realized;
3. when the silicon wafer is finally formed, core plates with different colors can be bonded on the front side and the back side of the silicon wafer, and the front side and the back side of the polycrystalline silicon wafer can be distinguished more directly, so that the silicon wafer can be better distinguished for installation.
Drawings
Fig. 1 is a schematic block diagram of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, the present invention provides a technical solution: a preparation method of a polycrystalline silicon wafer convenient to distinguish comprises the following steps:
the first embodiment is as follows:
1) preparing and selecting industrial silicon raw materials: selecting 2kg of aluminum alloy powder and 0.5kg of silicon carbide, sequentially placing the aluminum alloy powder and the silicon carbide in a mixer for mixing to prepare aluminum silicon carbide mixed powder, sequentially mixing for 30min at 650rpm and 1h at 1000rpm, atomizing and spraying 30ml of graphene ethanol dispersion liquid into the aluminum silicon carbide mixed powder under the condition of 1000rpm, mixing for 2h again to prepare graphene aluminum silicon carbide mixed dispersion liquid, and finally mixing with 45 kg of silicon carbide0C, drying to generate graphene reinforced aluminum silicon carbide mixed powder;
2) acid washing: putting the graphene reinforced aluminum silicon carbide mixed powder into a reaction kettle filled with an inorganic acid solution with the concentration of 25%, and reacting at 15%0C, treating for 5 hours, then removing Ti and Fe through the processes of water washing, separation, drying and the like, and simultaneously removing phosphorus impurities in silicon through an electron beam melting method;
3) oxidation refining: introducing protective gas, high-purity argon gas and refining gas into the pickled graphene reinforced aluminum silicon carbide, wherein the chlorine gas takes nitrogen as a carrier, then leading the graphene reinforced aluminum silicon carbide to carry out slagging refining in sequence in a low-temperature slagging stage, a medium-temperature slagging stage and a high-temperature slagging stage, wherein the temperature in the low-temperature slagging stage is 1450 ℃, the slagging agent is a calcium chloride and anhydrous sodium metasilicate system, the mass ratio of calcium chloride to anhydrous sodium metasilicate in the slagging agent is 1:1, the temperature in the medium-temperature slagging stage is 1550 ℃, the slagging agent is a calcium silicate and fluorite system, the mass ratio of calcium silicate to fluorite in the slagging agent is 9:1, the temperature in the high-temperature slagging stage is 1600 ℃, the slagging agent is a calcium silicate and aluminum silicate system, the mass ratio of calcium silicate to aluminum silicate in the slagging agent is 9:1, and the addition amount of the slagging agent in each stage is 20% of the mass of silicon melt, and the time for slagging and refining in each stage is 30min respectively;
4) and (3) vacuum treatment: placing the oxidized and refined graphene reinforced aluminum silicon carbide in a sheath for vacuum degassing treatment, performing microwave heating on the sheath, keeping the external refining temperature of the graphene reinforced aluminum silicon carbide, performing external blowing and slagging refining for 2 hours, performing slag-silicon separation after the external refining is finished, keeping the temperature and cooling to room temperature after the vacuum degree of the sheath reaches 4.0 x 10 < -3 > Pa, and taking out the sheath;
5) solidification and refining: taking out the vacuum-treated sheath, welding and sealing, performing hot isostatic pressing forming treatment on the sheath, machining to obtain a round billet ingot, thus obtaining a polycrystalline silicon wafer, and finally bonding core plates with different colors on the front and back surfaces of the polycrystalline silicon wafer;
example two:
1) preparing and selecting industrial silicon raw materials: selecting 2kg of aluminum alloy powder and 0.5kg of silicon carbide, sequentially placing the aluminum alloy powder and the silicon carbide in a mixer for mixing to prepare aluminum silicon carbide mixed powder, sequentially mixing for 30min at 650rpm and 1h at 1000rpm, atomizing and spraying 30ml of graphene ethanol dispersion liquid into the aluminum silicon carbide mixed powder under the condition of 1000rpm, mixing for 2h again to prepare graphene aluminum silicon carbide mixed dispersion liquid, and finally mixing with 45 kg of silicon carbide0C, drying to generate graphene reinforced aluminum silicon carbide mixed powder;
2) acid washing: putting the graphene reinforced aluminum silicon carbide mixed powder into a reaction kettle filled with an inorganic acid solution with the concentration of 50%, and reacting at 45%0C, treating for 7.5 hours, then removing Ti and Fe through the processes of water washing, separation, drying and the like, and removing phosphorus impurities in silicon through an electron beam melting method;
3) oxidation refining: introducing protective gas, high-purity argon gas and refining gas into the pickled graphene reinforced aluminum silicon carbide, wherein the chlorine gas takes nitrogen as a carrier, then leading the graphene reinforced aluminum silicon carbide to carry out slagging refining in sequence in a low-temperature slagging stage, a medium-temperature slagging stage and a high-temperature slagging stage, wherein the temperature in the low-temperature slagging stage is 1450 ℃, the slagging agent is a calcium chloride and anhydrous sodium metasilicate system, the mass ratio of calcium chloride to anhydrous sodium metasilicate in the slagging agent is 1:1, the temperature in the medium-temperature slagging stage is 1550 ℃, the slagging agent is a calcium silicate and fluorite system, the mass ratio of calcium silicate to fluorite in the slagging agent is 9:1, the temperature in the high-temperature slagging stage is 1600 ℃, the slagging agent is a calcium silicate and aluminum silicate system, the mass ratio of calcium silicate to aluminum silicate in the slagging agent is 9:1, and the addition amount of the slagging agent in each stage is 20% of the mass of silicon melt, and the time for slagging and refining in each stage is 30min respectively;
4) and (3) vacuum treatment: placing the oxidized and refined graphene reinforced aluminum silicon carbide in a sheath for vacuum degassing treatment, performing microwave heating on the sheath, keeping the external refining temperature of the graphene reinforced aluminum silicon carbide, performing external blowing and slagging refining for 5 hours, performing slag-silicon separation after the external refining is finished, keeping the temperature and cooling to room temperature after the vacuum degree of the sheath reaches 4.0 x 10 < -3 > Pa, and taking out the sheath;
5) solidification and refining: taking out the vacuum-treated sheath, welding and sealing, performing hot isostatic pressing forming treatment on the sheath, machining to obtain a round billet ingot, thus obtaining a polycrystalline silicon wafer, and finally bonding core plates with different colors on the front and back surfaces of the polycrystalline silicon wafer;
example three:
1) preparing and selecting industrial silicon raw materials: selecting 2kg of aluminum alloy powder and 0.5kg of silicon carbide, sequentially placing the aluminum alloy powder and the silicon carbide in a mixer for mixing to prepare aluminum silicon carbide mixed powder, sequentially mixing for 30min at 650rpm and 1h at 1000rpm, atomizing and spraying 30ml of graphene ethanol dispersion liquid into the aluminum silicon carbide mixed powder under the condition of 1000rpm, mixing for 2h again to prepare graphene aluminum silicon carbide mixed dispersion liquid, and finally mixing with 45 kg of silicon carbide0C, drying to generate graphene reinforced aluminum silicon carbide mixed powder;
2) acid washing: putting the graphene reinforced aluminum silicon carbide mixed powder into a reaction kettle filled with an inorganic acid solution with the concentration of 70 percent at 70 percent0C, treating for 10 hours, then removing Ti and Fe through the processes of water washing, separation, drying and the like, and simultaneously removing phosphorus impurities in silicon through an electron beam melting method;
3) oxidation refining: introducing protective gas, high-purity argon gas and refining gas into the pickled graphene reinforced aluminum silicon carbide, wherein the chlorine gas takes nitrogen as a carrier, then leading the graphene reinforced aluminum silicon carbide to carry out slagging refining in sequence in a low-temperature slagging stage, a medium-temperature slagging stage and a high-temperature slagging stage, wherein the temperature in the low-temperature slagging stage is 1450 ℃, the slagging agent is a calcium chloride and anhydrous sodium metasilicate system, the mass ratio of calcium chloride to anhydrous sodium metasilicate in the slagging agent is 1:1, the temperature in the medium-temperature slagging stage is 1550 ℃, the slagging agent is a calcium silicate and fluorite system, the mass ratio of calcium silicate to fluorite in the slagging agent is 9:1, the temperature in the high-temperature slagging stage is 1600 ℃, the slagging agent is a calcium silicate and aluminum silicate system, the mass ratio of calcium silicate to aluminum silicate in the slagging agent is 9:1, and the addition amount of the slagging agent in each stage is 20% of the mass of silicon melt, and the time for slagging and refining in each stage is 30min respectively;
4) and (3) vacuum treatment: placing the oxidized and refined graphene reinforced aluminum silicon carbide in a sheath for vacuum degassing treatment, performing microwave heating on the sheath, keeping the external refining temperature of the graphene reinforced aluminum silicon carbide, performing external blowing and slagging refining for 7 hours, performing slag-silicon separation after the external refining is finished, keeping the temperature and cooling to room temperature after the vacuum degree of the sheath reaches 4.0 x 10 < -3 > Pa, and taking out the sheath;
5) solidification and refining: and taking out the vacuum-treated sheath, welding and sealing, performing hot isostatic pressing forming treatment on the sheath, machining to obtain a round billet ingot, thus obtaining a polycrystalline silicon wafer, and finally bonding core plates with different colors on the front and back surfaces of the polycrystalline silicon wafer.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. A preparation method of a polycrystalline silicon wafer convenient to distinguish is characterized by comprising the following steps:
preparing and selecting industrial silicon raw materials: selecting aluminum alloy powder and silicon carbide, sequentially placing the aluminum alloy powder and the silicon carbide in a mixer for mixing to prepare aluminum silicon carbide mixed powder, then atomizing and spraying graphene ethanol dispersion liquid into the aluminum silicon carbide mixed powder for mixing again to prepare graphene aluminum silicon carbide mixed dispersion liquid, and finally drying to generate graphene reinforced aluminum silicon carbide mixed powder;
acid washing: putting the graphene reinforced aluminum silicon carbide mixed powder into a reaction kettle filled with an inorganic acid solution at the temperature of 20-70 DEG C0C, treating for 5-10 h, then washing with water, separating, drying and the like to remove Ti and Fe, and simultaneously removing phosphorus impurities;
oxidation refining: introducing protective gas, high-purity argon and chlorine taking nitrogen as a carrier into the pickled graphene-reinforced aluminum silicon carbide, and then carrying out slagging refining on the graphene-reinforced aluminum silicon carbide in a low-temperature slagging stage, a medium-temperature slagging stage and a high-temperature slagging stage in sequence;
and (3) vacuum treatment: placing the oxidized and refined graphene reinforced aluminum silicon carbide in a sheath for vacuum degassing treatment, performing microwave heating on the sheath, keeping the external refining temperature of the graphene reinforced aluminum silicon carbide, performing external blowing and slagging refining for 0.5-10 h, performing slag-silicon separation after the external refining is finished, keeping the temperature and cooling to room temperature until the vacuum degree of the sheath reaches 4.0 x 10 < -3 > Pa, and taking out the sheath;
solidification and refining: and taking out the vacuum-treated sheath, welding and sealing, performing hot isostatic pressing forming treatment on the sheath, machining to obtain a round billet ingot, thus obtaining a polycrystalline silicon wafer, and finally bonding core plates with different colors on the front and back surfaces of the polycrystalline silicon wafer.
2. A readily distinguishable polycrystalline silicon wafer according to claim 1, wherein: the graphene ethanol dispersion liquid comprises 1000g of graphene, and 1000g of graphene is uniformly dispersed into 1000ml of absolute ethanol.
3. A readily distinguishable polycrystalline silicon wafer according to claim 1, wherein: the temperature of the low-temperature slagging stage is 1450 ℃, the slagging agent is calcium chloride and anhydrous sodium metasilicate, the temperature of the medium-temperature slagging stage is 1550 ℃, the slagging agent is calcium silicate and fluorite, the temperature of the high-temperature slagging stage is 1600 ℃, and the slagging agent is calcium silicate and aluminum silicate.
4. A readily distinguishable polycrystalline silicon wafer according to claim 1, wherein: the sheath is an aluminum alloy sheath, and the dimension of the sheath is phi 100 multiplied by 200 mm.
5. A readily distinguishable polycrystalline silicon wafer according to claim 1, wherein: the method for removing phosphorus impurities adopts an electron beam melting method.
6. A readily distinguishable polycrystalline silicon wafer according to claim 3, wherein: the mass ratio of calcium chloride to anhydrous sodium metasilicate is 1:1, the mass ratio of calcium silicate to fluorite is 9:1, and the mass ratio of calcium silicate to aluminum silicate is 9: 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910883813.2A CN110644050A (en) | 2019-09-19 | 2019-09-19 | Polycrystalline silicon wafer convenient to distinguish and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910883813.2A CN110644050A (en) | 2019-09-19 | 2019-09-19 | Polycrystalline silicon wafer convenient to distinguish and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110644050A true CN110644050A (en) | 2020-01-03 |
Family
ID=68991339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910883813.2A Pending CN110644050A (en) | 2019-09-19 | 2019-09-19 | Polycrystalline silicon wafer convenient to distinguish and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110644050A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114951664A (en) * | 2022-04-24 | 2022-08-30 | 哈尔滨工业大学 | Preparation method of graphene and silicon carbide hybrid reinforced aluminum matrix composite |
| CN117644208A (en) * | 2024-01-25 | 2024-03-05 | 长春黄金研究院有限公司 | Fine silver powder with high dispersibility and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101724902A (en) * | 2009-12-16 | 2010-06-09 | 东北大学 | Process for preparing solar-grade polysilicon by adopting high-temperature metallurgy method |
| CN105293502A (en) * | 2015-10-19 | 2016-02-03 | 成都理工大学 | Method for preparing solar-grade silicon by refining industrial silicon |
| CN106591666A (en) * | 2016-12-15 | 2017-04-26 | 北京宝航新材料有限公司 | Graphene enhanced aluminium-based silicon carbide composite, preparation method and application thereof |
| CN106676335A (en) * | 2016-12-22 | 2017-05-17 | 北京宝航新材料有限公司 | Graphene, aluminum and silicon carbide composite material and preparation method and application thereof |
| CN109112337A (en) * | 2018-09-30 | 2019-01-01 | 沈阳理工大学 | Graphene and silicon carbide hybrid reinforced aluminum-matrix composite material and preparation method thereof |
-
2019
- 2019-09-19 CN CN201910883813.2A patent/CN110644050A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101724902A (en) * | 2009-12-16 | 2010-06-09 | 东北大学 | Process for preparing solar-grade polysilicon by adopting high-temperature metallurgy method |
| CN105293502A (en) * | 2015-10-19 | 2016-02-03 | 成都理工大学 | Method for preparing solar-grade silicon by refining industrial silicon |
| CN106591666A (en) * | 2016-12-15 | 2017-04-26 | 北京宝航新材料有限公司 | Graphene enhanced aluminium-based silicon carbide composite, preparation method and application thereof |
| CN106676335A (en) * | 2016-12-22 | 2017-05-17 | 北京宝航新材料有限公司 | Graphene, aluminum and silicon carbide composite material and preparation method and application thereof |
| CN109112337A (en) * | 2018-09-30 | 2019-01-01 | 沈阳理工大学 | Graphene and silicon carbide hybrid reinforced aluminum-matrix composite material and preparation method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114951664A (en) * | 2022-04-24 | 2022-08-30 | 哈尔滨工业大学 | Preparation method of graphene and silicon carbide hybrid reinforced aluminum matrix composite |
| CN117644208A (en) * | 2024-01-25 | 2024-03-05 | 长春黄金研究院有限公司 | Fine silver powder with high dispersibility and preparation method thereof |
| CN117644208B (en) * | 2024-01-25 | 2024-04-12 | 长春黄金研究院有限公司 | Fine silver powder with high dispersibility and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107099708B (en) | A kind of graphene rare earth aluminium alloy height leads the preparation method of material | |
| RU2716296C1 (en) | Obtaining reduced titanium powder by multi-step deep reduction | |
| CN103205614B (en) | A kind of production technique of 6063 aluminum alloy materials | |
| CN103103372A (en) | Smelting preparation method for anti-stamping aluminum alloy section bar | |
| CN106148786A (en) | High-strength casting magnesium lithium alloy and preparation method thereof | |
| CN102583389A (en) | Method for purifying industrial silicon through external refining | |
| CN114086040B (en) | Aluminum-magnesium-silicon-scandium-zirconium alloy and preparation method thereof | |
| CN110644050A (en) | Polycrystalline silicon wafer convenient to distinguish and preparation method thereof | |
| CN106884110B (en) | A kind of method that high vacuum electric arc furnaces prepares nickel base superalloy | |
| WO2018228140A1 (en) | Method for preparing ferrotitanium alloy based on aluminothermic self-propagating gradient reduction and slagging refining | |
| CN111945049B (en) | Aluminum-molybdenum intermediate alloy and preparation method thereof | |
| CN102922225B (en) | Preparation method of molybdenum target | |
| CN113355584B (en) | High-cobalt high-molybdenum superhard high-speed steel and method for improving hot working performance thereof | |
| CN111218557B (en) | Casting method of ferrovanadium alloy | |
| EP2617847B1 (en) | Sealing ring and preparation method thereof | |
| CN108330358A (en) | A kind of anticorrosion aluminium | |
| CN110714134A (en) | Efficient aluminum-silicon alloy slagging agent and preparation and application thereof | |
| CN102974795B (en) | Method for producing Monel alloy ingot by using horizontal continuous casting | |
| CN102418008B (en) | High-strength aluminum alloy obtained by removing inclusion through HfC and preparation method of aluminum alloy | |
| CN101928983B (en) | Method for producing polycrystalline silicon and polycrystalline silicon membrane by accelerant process | |
| CN105296831B (en) | A kind of wrought magnesium alloy of high room temperature elongation percentage and preparation method thereof | |
| CN108793170A (en) | A kind of ventilation slag making of industrial silicon is smelted combine pretreatment after acid cleaning process | |
| CN111364066B (en) | Short-process preparation method of rare earth magnesium alloy | |
| CN112744817B (en) | Solar-grade silicon with porous structure and preparation method and application thereof | |
| CN109319788A (en) | A method of polysilicon is prepared using Alsical refining and directional solidification |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20200103 |