CN110635698B - Radio frequency signal rectifier with high backspacing range - Google Patents

Radio frequency signal rectifier with high backspacing range Download PDF

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Publication number
CN110635698B
CN110635698B CN201910640968.3A CN201910640968A CN110635698B CN 110635698 B CN110635698 B CN 110635698B CN 201910640968 A CN201910640968 A CN 201910640968A CN 110635698 B CN110635698 B CN 110635698B
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rectifier
power amplifier
amplifier transistor
range
radio frequency
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CN110635698A (en
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游飞
张硕
王颖
董士伟
禹旭敏
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University of Electronic Science and Technology of China
Xian Institute of Space Radio Technology
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University of Electronic Science and Technology of China
Xian Institute of Space Radio Technology
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

The invention discloses a radio frequency signal rectifier with a high back-off range, belongs to the technical field of microwave energy transmission, and particularly relates to a radio frequency signal rectifier with a high back-off range, so as to meet the application requirement of the rectifier in a complex environment. Since the maximum rectification efficiency of a conventional rectifier is often obtained at a certain fixed input power, the efficiency curve of a conventional rectifier is generally shown in fig. 2. Aiming at the defects that the input power range of a general rectifier is small and the efficiency is seriously reduced when the input power is backed off, the invention designs the rectifier with a large power backing-off range based on the Doherty power amplifying circuit structure by using the reverse time duality between the power amplifying circuit and the rectifying circuit by using the circuit structure of the classic Doherty power amplifier.

Description

Radio frequency signal rectifier with high backspacing range
Technical Field
The invention belongs to the technical field of microwave energy transmission, and particularly relates to a radio frequency signal rectifier with a high back-off range, which is designed to meet the application requirement of the rectifier in a complex environment.
Background
In most studies on microwave rectification, the maximum rectification efficiency is usually obtained at a certain fixed input power. For the rectifier tubes with different power tolerances, when the rectification efficiency reaches the maximum, the corresponding input power is available, and the rectification efficiency is obviously reduced when the rectification efficiency is lower or higher than the corresponding input power. Corresponding solutions have already been proposed for the case where the existing rectifier IPR is not large enough. There is a paper that designs a high dynamic input microwave rectification circuit, as shown in fig. 1. The paper designs a high power microwave rectification circuit and a low power microwave rectification circuit respectively, and connects the input ends of the two circuits by using a circulator. By utilizing the one-way transmission principle of the circulator, when the input power changes, because the circuits are not matched, the first-stage high-power rectifying circuit can generate a reflected echo, the echo power enters the second-stage low-power rectifying circuit through the circulator, and the direct-current power is output after rectification and synthesized with the output and the power of the first-stage circuit. However, the high dynamic input microwave rectification circuit has a complicated structure, and a high power microwave rectification circuit and a low power microwave rectification circuit need to be designed respectively, and the total of the two rectification units may cause an overlarge circuit area.
Disclosure of Invention
In order to keep the rectification efficiency of the rectifier higher in a larger input power range and not to seriously reduce the rectification efficiency in the input power back-off process, the invention provides another implementation method of the radio frequency signal rectifier with a high back-off range.
The technical scheme of the invention is a radio frequency signal rectifier with a high backspacing range, which comprises: the circuit comprises a grid resistor, a Carrier power amplifier transistor (Carrier), a Peak power amplifier transistor (Peak), a first impedance converter, a second impedance converter, a drain output resistor RLoad and direct current output; the input end of the first impedance converter is used as a radio frequency input; the output end of the first impedance converter is divided into two paths which are respectively connected with the input end of the second impedance converter and the source electrode of the peak power amplifier transistor; the source electrode of the carrier power amplifier transistor is connected with the output end of the second impedance converter, the drain electrodes of the carrier power amplifier transistor and the peak power amplifier transistor are connected in parallel and then grounded through a drain electrode resistor, the grid electrodes of the carrier power amplifier transistor and the peak power amplifier transistor are connected in parallel and then grounded through a grid electrode resistor, the positive end of the direct current output is connected with the non-grounding end of the drain electrode output resistor, and the negative end of the direct current output is grounded.
Since the maximum rectification efficiency of a conventional rectifier is often obtained at a certain fixed input power, the efficiency curve of a conventional rectifier is generally shown in fig. 2. Aiming at the defects that the input power range of a general rectifier is small and the efficiency is seriously reduced when the input power is backed off, the invention designs the rectifier with a large power backing-off range based on the Doherty power amplifying circuit structure by using the reverse time duality between the power amplifying circuit and the rectifying circuit by using the circuit structure of the classic Doherty power amplifier.
Drawings
FIG. 1 is a schematic diagram of a high dynamic input microwave rectification circuit in the background art;
FIG. 2 is a graph of efficiency of a prior art rectifier;
FIG. 3 is a schematic diagram of an RF signal rectifier with a high back-off range according to the present invention;
FIG. 4 is a graph illustrating the efficiency of an RF signal rectifier with a high back-off range according to the present invention.
Detailed Description
The rectifier of the present invention comprises: the circuit comprises a grid resistor, a Carrier power amplifier transistor (Carrier), a Peak power amplifier transistor (Peak), a first impedance converter, a second impedance converter, a drain output resistor RLoad and direct current output; the input end of the first impedance converter is used as a radio frequency input; the output end of the first impedance converter is divided into two paths which are respectively connected with the input end of the second impedance converter and the source electrode of the peak power amplifier transistor; the source electrode of the carrier power amplifier transistor is connected with the output end of the second impedance converter, the drain electrodes of the carrier power amplifier transistor and the peak power amplifier transistor are connected in parallel and then grounded through a drain electrode resistor, the grid electrodes of the carrier power amplifier transistor and the peak power amplifier transistor are connected in parallel and then grounded through a grid electrode resistor, the positive end of the direct current output is connected with the non-grounding end of the drain electrode output resistor, and the negative end of the direct current output is grounded.
The rectifier adopts a Doherty power amplifier framework, and designs a radio frequency signal rectifier with a high backspacing range by utilizing the reverse time duality between a power amplifier and a rectifying circuit. The schematic block diagram of the rectifier is shown in fig. 3, and compared with the power amplifier, the same circuit has better back-off efficiency when used as a rectifier, so the efficiency curve of the rectifier proposed by the present invention is shown in fig. 4. When the input power is higher, both the carrier power amplifier transistor and the peak power amplifier transistor participate in rectification; when the input power is reduced, the peak power amplifier transistor is gradually closed, and the efficiency is slightly reduced; when the peak power amplifier transistor is completely turned off, the efficiency is improved to some extent because the transistor does not consume power; the input power continues to roll back and the efficiency curve is the same as that of a single transistor when rectifying.

Claims (1)

1. A radio frequency signal rectifier having a high back-off range, the rectifier comprising: the circuit comprises a grid resistor, a carrier power amplifier transistor, a peak power amplifier transistor, a first impedance converter, a second impedance converter, a drain electrode output resistor RLoad and direct current output; the input end of the first impedance converter is used as a radio frequency input; the output end of the first impedance converter is divided into two paths which are respectively connected with the input end of the second impedance converter and the source electrode of the peak power amplifier transistor; the source electrode of the carrier power amplifier transistor is connected with the output end of the second impedance converter, the drain electrodes of the carrier power amplifier transistor and the peak power amplifier transistor are connected in parallel and then grounded through a drain electrode resistor, the grid electrodes of the carrier power amplifier transistor and the peak power amplifier transistor are connected in parallel and then grounded through a grid electrode resistor, the positive end of the direct current output is connected with the non-grounding end of the drain electrode output resistor, and the negative end of the direct current output is grounded.
CN201910640968.3A 2019-05-28 2019-07-16 Radio frequency signal rectifier with high backspacing range Active CN110635698B (en)

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CN114244149B (en) * 2021-12-06 2023-07-11 天津大学 Dual-path RF-DC rectifier for radio frequency energy harvesting system

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