CN110635669A - High-voltage MOSFET switch driving and protecting circuit - Google Patents
High-voltage MOSFET switch driving and protecting circuit Download PDFInfo
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- CN110635669A CN110635669A CN201911111580.0A CN201911111580A CN110635669A CN 110635669 A CN110635669 A CN 110635669A CN 201911111580 A CN201911111580 A CN 201911111580A CN 110635669 A CN110635669 A CN 110635669A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
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Abstract
A high-voltage MOSFET switch driving and protecting circuit comprises a floating ground voltage source, an internal low-voltage source, a charge pump, a logic control part, an overcurrent detection part, an overtemperature detection part and a grid driving part; an input high-voltage power supply obtains a floating power supply and an internal low-voltage source through a voltage stabilizing or reducing circuit; the floating power supply drives the charge pump circuit to obtain MOSFET grid driving voltage higher than the input power supply; the grid logic operation unit is connected with a grid driver, and the input end of the grid logic operation unit is an internal low-voltage source and an external TTL input signal: the internal low voltage source is used for comparing an external TTL input signal with an over-current and over-temperature logic control signal; when the external TTL input signal is in a high level, the grid logic operation unit turns off the MOSFET and unloads the load voltage source. When the external TTL input signal is at a low level, the MOSFET is started, and the high-voltage source is loaded to the load. The realized protection function is as follows: when the circuit works in an overcurrent or overtemperature state, the MOSFET is turned off, and the driving circuit and the load are protected.
Description
The technical field is as follows:
the invention belongs to the technical field of electronic information, and particularly relates to a high-voltage MOSFET switch driving circuit and a protection circuit.
Background art:
the power field effect transistor (MOSFET) has the characteristics of high switching speed, small driving power, wide safe working area and the like, and is widely applied to the fields of high-performance switching power supplies and various control applications. For example, the displacement control of the motor can be realized by switching a high-voltage power MOSFET through a pulse width modulated low-voltage signal. In the driving application of high-power laser, the pulse signal controlled by the pulse width realizes the precise adjustment of the working current and the working temperature of the laser by switching the MOSFET high-voltage power tube. In addition, in radar applications, the gan power amplifier operates in a pulsed mode, requiring a switching MOSFET to provide high voltage pulsed power to the power load. The requirements for MOSFET driver circuits for the various applications described above include: the high voltage (50-100V) MOSFET switch is controlled by an external low voltage (3.3-5V) signal. To load the input power to the load for fast MOSFET turn-on, the gate voltage of the MOSFET must be higher than the supply voltage (l 0-l 5V). In addition, at this time, the high-voltage MOSFET has a small power absorbed by the circuit, and the influence on the overall efficiency of the system needs to be ignored.
Currently, to turn on the high voltage MOSFET, a MOSFET gate driving method of a transformer can be used, but this method is not suitable for a high speed switching scenario. The independent grid power supply mode needs to introduce a new power supply, and the complexity of the system is increased. And the drive of the MOSFET is realized by adopting the existing input power supply, so that the circuit can be greatly simplified, and the integration of the circuit is improved. In addition, for circuit safety, the driving circuit needs to be capable of turning off the MOSFET in time when the load current or the operating temperature of the MOSFET exceeds a limit, and has the capability of protecting the switch drive and the subsequent load.
The invention content is as follows:
in order to overcome the disadvantages of the prior art and to meet the requirements for drive and protection capabilities, the invention provides a high-voltage MOSFET switch drive and protection circuit. The drive circuit realizes the following functions: and when the external TTL input signal is at a low level, the MOSFET is started, and the input high-voltage source is loaded to the load. And when the external TTL input signal is high level, the MOSFET is turned off, and the load voltage source is unloaded. Meanwhile, the protection function realized by the circuit is as follows: when the MOSFET works in an overcurrent or overtemperature state, the MOSFET is turned off, and the driving circuit and the load are protected.
The technical scheme of the invention is that the high-voltage MOSFET switch driving and protecting circuit comprises a floating ground voltage source, an internal low voltage source, a charge pump, a logic control part, an overcurrent detection part, an overtemperature detection part and an MOSFET grid driving part; an input high-voltage power supply obtains a floating power supply and an internal low-voltage source through a voltage stabilizing or reducing circuit; the floating power supply drives the charge pump circuit to obtain MOSFET grid driving voltage higher than the input power supply; the grid logic operation unit is connected with the MOSFET grid drive circuit, and the input end of the grid logic operation unit is an internal low-voltage source and an external TTL input signal: the internal low voltage source is used for comparing external TTL input signals and logic control signals of overcurrent and overtemperature: when the external TTL input signal is low level, the gate logic operation unit turns on the MOSFET to load the input high voltage source to the load. When the external TTL input signal is in a high level, the grid logic operation unit turns off the MOSFET and unloads the load voltage source. The grid logic operation unit is used for finishing the judgment signals of opening and closing the MOSFET by an external TTL signal and an overcurrent detection signal through various gate circuits.
And the logic control signal realizes the on-off of the high-voltage MOSFET through the grid driving module. The over-current detection and the over-temperature detection are obtained through current sampling and temperature sampling.
The over-current detection and over-temperature detection circuit is connected to the gate logic operation unit, and when the MOSFET works under over-current or over-temperature, the gate logic operation unit turns off the MOSFET to protect the driving circuit and the load; the over-current detection and the over-temperature detection are obtained by current sampling and temperature sampling.
The floating power supply is obtained by inputting a high-voltage power supply through a voltage stabilizing diode. The high potential of the floating power supply is equal to the high potential of the input high voltage source, and the low potential is the low potential of the anode of the voltage stabilizing diode. The voltage difference of the floating power supply is determined by the voltage stabilizing diode and is between 10 and 15V.
The internal low voltage source is obtained by linearly stabilizing the voltage of an input power supply, and the voltage range is 5-12V.
The internal low voltage source supplies power to the logic control circuit and the temperature overload circuit.
The floating power supply obtains a MOSFET gate drive voltage higher than the input power supply 12V through a Dickson charge pump.
The external control signal is subjected to logic processing and a grid drive circuit, so that the on-off control of the MOSFET is realized. And when the external control signal is TTL high/low level, the MOSFET is respectively turned off/on.
The grid driving high-voltage source obtained by the charge pump also supplies power to the over-current detection circuit through linear voltage stabilization; the over-current detection mode is as follows: and comparing the voltage drop of the current sampling resistor with a reference voltage value to judge whether the MOSFET is overloaded. The current overload high voltage level is converted into low voltage and is controlled by logic, and then the MOSFET is switched off.
And the voltage conversion of the current overload level is realized in an optical coupling isolation mode.
The temperature overload detection mode is as follows: and (3) tightly attaching the negative temperature coefficient thermistor to the MOSFET, and comparing the sampling voltage of the thermistor with the reference voltage to judge whether the temperature of the MOSFET exceeds the limit. When the temperature is over-high, the comparator level keeps turning off the MOSFET through the logic control and grid drive circuit.
The principle of the charge pump is that the charging and discharging of the capacitor adopt different connection modes, such as parallel charging, serial discharging, serial charging, parallel discharging and the like, so that the voltage conversion functions of boosting, reducing voltage, negative voltage and the like are realized. One use of the charge pump is to provide a floating drive voltage to the upper bridge arm in a half bridge circuit formed of N-channel MOSFETs.
Has the advantages that: the invention realizes the starting of the high-voltage MOSFET, and uses the MOSFET grid driving mode of logic operation, and the driving circuit realizes the functions of: and when the external TTL input signal is at a low level, the MOSFET is started, and the input high-voltage source is loaded to the load. And when the external TTL input signal is high level, the MOSFET is turned off, and the load voltage source is unloaded. The drive circuit can timely turn off the MOSFET when the load current or the working temperature of the MOSFET exceeds the limit without the mode of independent grid power supply, and has the capability of protecting switch drive and a rear-stage load.
Description of the drawings:
fig. 1 is a functional structure diagram of a MOSFET switch driving and protecting circuit according to the present invention.
FIG. 2 is a diagram of an example of the floating ground voltage and internal low voltage source generation circuit of the driving and protection circuit.
Fig. 3 is a diagram of an example of a charge pump circuit for obtaining a gate drive voltage of a MOSFET.
Fig. 4 is a diagram of an example of a logic processing circuit for external input signals and over-current/over-temperature control.
Fig. 5 is a diagram of an example of a MOSFET gate driving circuit for driving a control signal.
Fig. 6 is a diagram of an example of an MOSFET operation current overload detection circuit.
Fig. 7 is a diagram of an example of an overload detection circuit for MOSFET operating temperature.
Fig. 8 is a logic diagram (table) of external TLL, over-temperature, over-current control MOSFET on/off.
FIG. 9 is a timing diagram of an example of the high voltage MOSFET switch driver and protection circuit.
The specific implementation mode is as follows:
in order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail below by way of examples with reference to the accompanying drawings, but the embodiments of the present invention are not limited thereto.
Fig. 1 is a schematic diagram of a functional component structure of a high-voltage MOSFET switch driving and protecting circuit. The driving and protecting circuit comprises the following components: a floating ground voltage source 101, an internal low voltage source 102, a charge pump 103, a logic control 104, an over-current detection 105, an over-temperature detection 106, and a MOSFET gate drive 107. The input power voltage Vin is obtained by a floating power supply 101 and an internal low-voltage power supply 102 through a voltage stabilizing circuit. The floating power supply 101 drives the charge pump 102 to obtain a MOSFET gate drive voltage higher than the input supply voltage. The internal low voltage source 102 supplies power for external input control signals and logic control processing of overcurrent 105 and overtemperature 106. And the over-current detection of the MOSFET is realized by comparing the voltage of the sampling resistor with the reference threshold voltage. The side of the MOSFET is tightly attached to the thermosensitive element, and the over-temperature detection of the MOSFET is realized by comparing the voltage of the thermosensitive element with the reference threshold voltage. The logic control signal enables the high voltage MOSFET to be turned on and off through the gate driving module 107. And when the external input TTL signal is at a low level, the MOSFET is started, and the input high-voltage source is loaded to the load. And when the externally input TTL signal is high level, the MOSFET is turned off, and the voltage source is unloaded. Meanwhile, when the MOSFET is in an overcurrent or temperature overload condition, the MOSFET is controlled to be turned off through the logic control 104 and the gate drive 107 circuit. Each constituent part of the functional structure will be described separately below.
Fig. 2 shows an example circuit of a floating ground power supply 201(VH) and an internal low voltage power supply 202 (VL). The input power source 203(Vin) is a high voltage source of about 60V. Vin is first fed to the floating ground 201 through a D1 voltage regulator. The cathode of the D1 stabilivolt is the high level VH of the floating power supply, and the anode of the D1 stabilivolt is the ground FGND of the floating power supply. The floating voltage difference between VH and FGND is 12V. The input voltage is further passed through a linear regulation circuit 204 to obtain an internal low voltage power supply 202 (VL). The voltage difference VL to ground GND is 5V. The linear voltage stabilizing circuit consists of a regulating tube Q1, a resistor R1, a triode Q2, a voltage stabilizing tube D2, a sampling resistor R2 and a sampling resistor R3.
When the high-voltage MOSFET works in a fast switch, the grid-source voltage difference VGS of the MOSFET is required to be under the saturation starting voltage. At this time, the switch resistance of the MOSFET is minimum, and the power loss is minimum, so the MOSFET gate-source voltage difference VGS is greater than or equal to 12V. Since the voltage at the source of the MOSFET is close to the input voltage 203(Vin), to obtain a higher gate voltage than Vin, a charge pump circuit is used. Fig. 3 shows an example circuit of a charge pump circuit. In this embodiment, a Dickson two-stage charge pump is used. The clock pulse signal of the charge pump is realized by the oscillation function block of the counter 301(a1), and R4 and C4 set the pulse oscillation frequency. The clock pulses are coupled to the stages via pump capacitors C1, C2. By utilizing the one-way conductivity of the diodes D3, D4 and D5 and the property of the capacitor to store charges, the charges are pushed from the input end to the output end under the driving of two non-overlapping clock pulses, the output voltage rises continuously with the increase of the charges on the capacitor of the output end, and finally the voltage value of the charge pump power supply 302(Vp) reaches Vin + 12V. The power supply of the oscillation circuit 301(a1) of the present invention is provided by the floating power supply 201 (VH). Driving 301 the oscillator with the floating ground supply 201 has the advantage that an oscillating chip operating at low voltage can be used and a MOSFET gate drive voltage output above the supply voltage is obtained with fewer charge pump stages.
After obtaining the driving voltage sources of each stage required by the circuit, the following examples illustrate the implementation of the switching MOSFET logic, driving and protection circuits.
The logic of the external TTL signal for controlling the MOSFET switch is as follows: when the external TTL signal is high, the MOSFET is turned off. And when the external TTL signal is in a low level, the MOSFET is started. Meanwhile, when an overcurrent or overtemperature condition occurs, the protection logic requires that the MOSFET be kept off. An example of a logic circuit that implements this function is shown in fig. 4. The logic circuit is powered from an internal low voltage power supply 202(VL) by a buck regulator to provide the input high voltage power. 401 is an externally input TTL control signal, 402 is an input overcurrent/overtemperature detection signal (high level represents overcurrent/overtemperature), and 403 is an output logic control signal (connected to the MOSFET gate driving module 107). When the operating current and temperature of the MOSFET are within the threshold range, (404) the input of the a2 not gate is low and the output is high. The output of nand gate 405(a3) is controlled only by the externally input TTL signal 401. When the external input signal 401 is high, the nand gate 405 outputs high. When the external input signal 401 is low, the nand gate 405 outputs low. And when the over-current temperature or over-temperature condition occurs, the input end of the NOT gate (402) is in high level. At this time, the output of the nand gate is kept at high 403, the MOSFET is kept off, and the external TTL signal is not controlled. The logic control signal 403 requires a high level to turn off the MOSFET and a low level to turn on the MOSFET.
To achieve the switching off of the high voltage MOSFET by the low voltage logic control signal 403, the logic control signal of fig. 4 needs to be connected to the MOSFET gate driver circuit of fig. 5. Fig. 5 shows a MOSFET gate drive schematic. When the logic control signal 403 is high, the Q4 optocoupler is on. The NPN transistor Q5 turns off and the MOSFET turns off. When the logic control signal 403 is low, the Q4 is turned off, the NPN transistor Q5 is turned on, the charge pump power supply 302(Vp) is applied to the gate of the MOSFET, the MOSFET is turned on, and the input power supply 203(Vin) is applied to the load.
Further, overcurrent detection is required to protect the load from current exceeding a limit. When an overcurrent occurs, the MOSFET remains turned off. The circuit for over-current detection is shown in fig. 6. 601(Rs) is a sampling resistor connected in series with the drain of the MOSFET. The sampling resistor 601 selects a power resistor having a small resistance value. Since the voltage difference of the input power Vin across the sampling resistor is relatively small, the power supply voltage of the comparator 602 is required to be greater than that of the input power to ensure the normal operation of the comparator. In this example, the charge pump power supply 302(Vp) powers the comparator 602 by dropping to Vin + 5V. The negative power supply of the comparator is the ground potential of the floating ground power supply. The advantages of this design are: a comparator operating with a conventional voltage enables a voltage comparison of absolute high voltages. Therefore, when the drain current of the MOSFET becomes large, the voltage of the negative terminal of the comparator becomes small, and when the voltage of the drain current becomes smaller than the threshold set by the positive terminal of the comparator, the comparator outputs a high level. The high level is a high voltage signal, and is converted into a low voltage overcurrent detection high level signal 402 through the optocoupler Q8.
Further, in order to protect the operating temperature of the MOSFET from exceeding the limit, over-temperature detection is required. When over-temperature occurs, the MOSFET tube is kept off. The circuit for over-temperature detection is shown in fig. 7. The logic circuit is powered from an internal low voltage power supply 202(VL) by a buck regulator to provide the input high voltage power. 701(Rth) is a negative temperature coefficient thermistor for temperature detection, and the thermistor is in close contact with the MOSFET. Rth, R14, R15, R16 and A5 form a bridge type comparison circuit. As the temperature increases, the resistance of 701(Rth) decreases, causing the voltage at the negative terminal of the comparator 702(a5) to decrease. When 702 the negative terminal voltage is below a set threshold for the positive terminal, the comparator outputs an over-temperature high signal 402.
The logic for the external TL signal L, over-temperature, over-current control MOSFET switch is shown in fig. 8, according to the above example description. An example timing sequence for a corresponding one of the high voltage MOSFET switch driving and protection circuits is shown in fig. 9.
Claims (10)
1. A high-voltage MOSFET switch driving and protecting circuit is characterized by comprising a floating ground voltage source, an internal low-voltage source, a charge pump, logic control, overcurrent detection, over-temperature detection and an MOSFET grid driving part; an input high-voltage power supply obtains a floating power supply and an internal low-voltage source through a voltage stabilizing or reducing circuit; the floating power supply drives the charge pump circuit to obtain MOSFET grid driving voltage higher than the input power supply; the grid logic operation unit is connected with MOSFET grid drive, and the input end of the grid logic operation unit is an internal low voltage source and an external TTL input signal: the internal low voltage source is used for comparing external TTL input signals and logic control signals of overcurrent and overtemperature: when an external TTL input signal is at a low level, the grid logic operation unit starts the MOSFET and loads an input high-voltage source to a load; when the external TTL input signal is in a high level, the grid logic operation unit turns off the MOSFET and unloads the load voltage source.
2. The high voltage MOSFET switch driver and protection circuit of claim 1, wherein said gate logic unit logic control signal enables the high voltage MOSFET to be turned on and off by the gate driver unit.
3. The high-voltage MOSFET switch driving and protecting circuit as claimed in claim 1 or 2, wherein the over-current detecting and over-temperature detecting circuit is connected to the gate logic operation unit, and when the MOSFET operates over-current or over-temperature, the gate logic operation unit turns off the MOSFET to protect the driving circuit and the load; the over-current detection and the over-temperature detection are obtained by current sampling and temperature sampling; the temperature overload detection mode is as follows: and (3) tightly attaching the negative temperature coefficient thermistor to the MOSFET, and comparing the sampling voltage of the thermistor with the reference voltage to judge whether the temperature of the MOSFET exceeds the limit. When the temperature is over-high, the grid logic operation unit keeps turning off the MOSFET through the grid driving circuit.
4. The high voltage MOSFET switch driving and protecting circuit as claimed in claim 1 or 2, wherein said floating power source is an input high voltage power source obtained through a Zener diode, the high potential of the floating power source is equal to the high potential of the input high voltage power source, and the low potential is the low potential of the anode of the Zener diode.
5. The high voltage MOSFET switch driver and protection circuit of claim 4, wherein the floating power supply voltage differential is between 10-15 volts as determined by the zener diode.
6. The high voltage MOSFET switch driver and protection circuit of claim 1 or 2, wherein said internal low voltage source is obtained by linear regulation of the input power source, the voltage range being between 5-12V.
7. The high voltage MOSFET switch driver and protection circuit of claim 1 or 2, wherein the internal low voltage source powers the logic control circuit and the temperature overload circuit.
8. The high voltage MOSFET switch driver and protection circuit of claim 1 or 2, wherein said floating supply is supplied with a MOSFET gate drive voltage 12V higher than the input supply via a Dickson charge pump. The grid drive high voltage source obtained by the charge pump also supplies power to the over-current detection circuit through linear voltage stabilization.
9. The high voltage MOSFET switch driver and protection circuit of claim 1 or 2, wherein said over-current detection is performed by: comparing the voltage drop of the current sampling resistor with a reference voltage value, and judging whether the MOSFET is overloaded; the current overload high voltage level is converted into low voltage and is controlled by logic, and then the MOSFET is switched off.
10. The high voltage MOSFET switch driver and protection circuit of claim 1 or 2, wherein the voltage conversion of the current overload level is performed by optical coupling isolation.
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| CN201911111580.0A CN110635669A (en) | 2019-11-14 | 2019-11-14 | High-voltage MOSFET switch driving and protecting circuit |
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| CN201911111580.0A CN110635669A (en) | 2019-11-14 | 2019-11-14 | High-voltage MOSFET switch driving and protecting circuit |
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Cited By (6)
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| CN112821886A (en) * | 2020-12-23 | 2021-05-18 | 重庆两江卫星移动通信有限公司 | Over-current detection protection circuit based on MOSFET |
| CN113092836A (en) * | 2021-04-14 | 2021-07-09 | 山东英信计算机技术有限公司 | Circuit and method for realizing reliable protection of load circuit |
| CN113691246A (en) * | 2020-05-18 | 2021-11-23 | 宁波奥克斯电气股份有限公司 | Overcurrent protection circuit and overcurrent protection method of power switch tube |
| CN114442535A (en) * | 2022-01-27 | 2022-05-06 | 中国科学院近代物理研究所 | Gate gate driving circuit and method for GEM-TPC detector |
| CN114785374A (en) * | 2022-05-11 | 2022-07-22 | 成都川为生物医疗科技有限责任公司 | Be applied to B ultrasonic receiving and dispatching circuit |
| RU2796095C1 (en) * | 2022-09-12 | 2023-05-17 | Виктор Иванович Шевченко | Voltage switch with overcurrent protection |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113691246A (en) * | 2020-05-18 | 2021-11-23 | 宁波奥克斯电气股份有限公司 | Overcurrent protection circuit and overcurrent protection method of power switch tube |
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| CN114442535A (en) * | 2022-01-27 | 2022-05-06 | 中国科学院近代物理研究所 | Gate gate driving circuit and method for GEM-TPC detector |
| CN114785374A (en) * | 2022-05-11 | 2022-07-22 | 成都川为生物医疗科技有限责任公司 | Be applied to B ultrasonic receiving and dispatching circuit |
| CN114785374B (en) * | 2022-05-11 | 2024-04-02 | 成都川为生物医疗科技有限责任公司 | Receiving and transmitting circuit applied to B ultrasonic |
| RU2796095C1 (en) * | 2022-09-12 | 2023-05-17 | Виктор Иванович Шевченко | Voltage switch with overcurrent protection |
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Application publication date: 20191231 |
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