CN110635003A - GaN-based light emitting diode epitaxial structure - Google Patents

GaN-based light emitting diode epitaxial structure Download PDF

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Publication number
CN110635003A
CN110635003A CN201910801971.9A CN201910801971A CN110635003A CN 110635003 A CN110635003 A CN 110635003A CN 201910801971 A CN201910801971 A CN 201910801971A CN 110635003 A CN110635003 A CN 110635003A
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layer
light emitting
gan
undoped
emitting diode
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游正璋
卢国军
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Yingrui Photoelectric Technology (shanghai) Co Ltd
Enraytek Optoelectronics Co Ltd
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Yingrui Photoelectric Technology (shanghai) Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The application relates to a GaN-based light emitting diode epitaxial structure, which is characterized by comprising: a substrate; the N-type epitaxial layer is positioned on the substrate; the light emitting layer is positioned on the N-type epitaxial layer; the electron blocking layer comprises an undoped blocking layer, the undoped blocking layer comprises first to N layers of structures which are sequentially stacked on the light emitting layer, the band gap width of the first layer of structure is larger than that of the light emitting layer, the band gap widths of the first to N layers of structure are gradually reduced, and N is larger than or equal to 3; and a P-type epitaxial layer on the electron blocking layer. According to the light emitting diode epitaxial structure, the undoped barrier layer is designed into a multilayer structure, and the band gap width from the first layer to the Nth layer is in a descending trend, so that the energy band is bent smoothly, and holes can overcome potential barriers and enter the light emitting layer.

Description

GaN-based light emitting diode epitaxial structure
Technical Field
The invention relates to the field of light emitting diodes, in particular to a GaN-based light emitting diode epitaxial structure.
Background
Gallium nitride is a core material of a blue light emitting diode in the semiconductor illumination nowadays, and an epitaxial structure of the gallium nitride-based light emitting diode comprises a multilayer structure, wherein the core layer comprises an N-type epitaxial layer, a light emitting layer and a P-type epitaxial layer, and electrons and holes in the N-type epitaxial layer are transported to the light emitting layer, so that the electrons and the holes are subjected to combined light emission in the light emitting layer. However, on one hand, since the mobility of the holes is much lower than that of the electrons, the injection efficiency of the electrons in the light emitting layer is high and the injection efficiency of the holes is low, so that the concentration distribution of the electrons and the holes in the light emitting layer is not uniform, and on the other hand, the electrons injected into the light emitting layer flow into the P-type epitaxial layer, and recombine with the holes in the P-type epitaxial layer to consume the holes, so that the holes input into the light emitting layer in the P-type epitaxial layer are further reduced, and the light emitting efficiency of the whole light emitting diode is low. Although an electron blocking layer is provided between the light-emitting layer and the P-type epitaxial layer to block the migration of electrons, the migration of holes is also restricted while blocking electrons.
Disclosure of Invention
Based on this, the application provides a GaN-based light emitting diode epitaxial structure aiming at the problem that the electron blocking layer in the GaN-based light emitting diode can influence the hole migration.
A GaN-based light emitting diode epitaxial structure, comprising:
a substrate;
the N-type epitaxial layer is positioned on the substrate;
the light emitting layer is positioned on the N-type epitaxial layer;
the electron blocking layer comprises undoped blocking layers, the undoped blocking layers comprise first to N layers of structures which are sequentially stacked on the light emitting layer, the band gap width of the first layer of structure is larger than that of the light emitting layer, the band gap widths of the first to N layers of structure are gradually reduced, and N is larger than or equal to 3; and
and the P-type epitaxial layer is positioned on the electron blocking layer.
According to the GaN-based light emitting diode epitaxial structure, the electronic barrier layer comprises the undoped barrier layer, the undoped barrier layer comprises a multilayer structure, and the band gap width of the first layer structure is larger than that of the light emitting layer, so that a potential barrier with a certain height is formed from the light emitting layer to the electronic barrier layer, and the migration of electrons is blocked; meanwhile, the band gap widths of the first layer to the Nth layer of the undoped barrier layer are gradually reduced, so that the energy bands of the undoped barrier layer from the first layer to the Nth layer are gradually reduced, the energy band bending is smooth, and holes can overcome the potential barrier of the electron barrier layer and enter the light-emitting layer. Therefore, by arranging the undoped barrier layer between the light-emitting layer and the P-type epitaxial layer, a steep potential barrier can be formed in the direction from the light-emitting layer to the electron barrier layer to block the migration of electrons, and a slow potential barrier can be formed in the direction from the P-type epitaxial layer to the light-emitting layer to facilitate the migration of holes to the light-emitting layer, so that more holes enter the light-emitting layer to be compounded with electrons, and the light-emitting efficiency of the light-emitting diode is improved. Meanwhile, the first layer structure to the Nth layer structure are all undoped structures, which is beneficial to maintaining the stability of the structures.
In one embodiment, the undoped barrier layer comprises a three-layer structure, wherein the first layer structure is an InAlGaN layer, the second layer structure is a GaN layer, and the third layer structure is an InGaN layer.
In one embodiment, the undoped barrier layer includes a four-layer structure, the first layer structure is an AlN layer, the second layer structure is an InAlGaN layer, the third layer structure is a GaN layer, and the fourth layer structure is an InGaN layer.
In one embodiment, the undoped barrier layer comprises a five-layer structure, the first layer structure is an AlN layer, the second layer structure is an InAlGaN layer, the third layer structure is a GaN layer, the fourth layer structure is an InGaN layer, and the fifth layer structure is InN.
In one embodiment, the thickness of each layer structure in the undoped barrier layer is not more than 10 nm.
In one embodiment, the electron blocking layer further includes a P-type doped blocking layer stacked on the undoped blocking layer, and a band gap width of the P-type doped blocking layer is larger than that of the nth layer structure.
In one embodiment, the P-type doped barrier layer comprises a P-type doped InAlGaN layer.
In one embodiment, the P-type doped barrier layer is a first multi-period quantum well structure comprising a potential barrier and a potential well, the potential well having a band gap width smaller than the potential barrier and the potential well having a band gap width larger than the light emitting layer.
In one embodiment, the thickness of the P-type doping blocking layer ranges from 20nm to 50 nm.
In one embodiment, the light emitting layer includes a second multicycle quantum well structure comprised of InAlGaN.
Drawings
FIG. 1 is a schematic structural diagram of an epitaxial structure of a GaN-based light emitting diode according to an embodiment of the present disclosure;
FIG. 2 is a schematic structural diagram of an undoped barrier layer according to a first embodiment of the present application;
FIG. 3 is a schematic view of a structure of an undoped barrier layer in a second embodiment of the present application;
fig. 4 is a schematic structural diagram of an undoped barrier layer in a third embodiment of the present application.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
The present application relates to an epitaxial structure of a GaN-based light emitting diode, which comprises a substrate 110, and an N-type epitaxial layer 140, a light emitting layer 160, an electron blocking layer 170 and a P-type epitaxial layer 180 sequentially stacked on the substrate, as shown in fig. 1. The electron blocking layer 170 includes an undoped blocking layer 171, the undoped blocking layer 171 includes first to nth layer structures sequentially stacked on the light emitting layer 160, wherein the first layer structure is close to the light emitting layer 160, the band gap width of the first layer structure is greater than that of the light emitting layer 160, the band gap widths of the first to nth layer structures in the undoped blocking layer are gradually reduced, and N is greater than or equal to 3.
According to the GaN-based light emitting diode epitaxial structure, the electronic barrier layer comprises the undoped barrier layer, and the undoped barrier layer has a stable structure due to the fact that the undoped barrier layer is not doped. Meanwhile, the undoped barrier layer comprises a multilayer structure, and the band gap widths of the first layer structure to the N layer structure are in a descending trend, so that the energy band bending in the direction from the P-type epitaxial layer to the light-emitting layer is smooth, and holes can overcome potential barriers and enter the light-emitting layer; and the first layer structure of the undoped barrier layer is close to the light-emitting layer, and the band gap width of the first layer structure is larger than that of the light-emitting layer, so that the potential barrier from the light-emitting layer to the electron barrier layer is increased, the energy band has a steep rising trend, electrons can be effectively prevented from crossing the potential barrier, and the light-emitting layer is overflowed. According to the analysis, the electron blocking layer is arranged between the light emitting layer and the P-type epitaxial layer, so that electron overflow is effectively blocked, blocking of holes is reduced, more holes and electrons are combined in the light emitting layer, and the light emitting efficiency of the light emitting diode is improved.
In one embodiment, each of the undoped barrier layer 171 is formed of a different semiconductor material. In a first embodiment, as shown in fig. 2, the undoped barrier layer 171 includes a three-layer structure, wherein the first layer structure a1 is an InAlGaN layer, the second layer structure a2 is a GaN layer, and the third layer structure a3 is an InGaN layer. In a second embodiment, as shown in fig. 3, the undoped barrier layer 171 includes a four-layer structure, wherein the first layer structure b1 is an AlN layer, the second layer structure b2 is an InAlGaN layer, the third layer structure b3 is a GaN layer, and the fourth layer structure b4 is an InGaN layer. In a third embodiment, as shown in fig. 4, the undoped barrier layer 171 includes a five-layer structure, the first layer structure c1 is an AlN layer, the second layer structure c2 is an InAlGaN layer, the third layer structure c3 is a GaN layer, the fourth layer structure c4 is an InGaN layer, and the fifth layer structure c5 is InN. In the above embodiment, the band gap width of AlN is about 6.2eV, the band gap width of GaN is about 3.4eV, the band gap width of InN is about 0.7eV, and the band gap width relationships of the above compounds are AlN > InAlGaN > GaN > InGaN > InN.
Although the gently curved energy level is beneficial for the holes to overcome the potential barrier, adjusting the degree of the energy band bending to make the energy band bending more gradual requires increasing the number of layers of the structure in the undoped blocking layer, i.e. increasing the thickness of the undoped blocking layer, which in turn increases the difficulty of the holes crossing the electron blocking layer to enter the light emitting layer, so that the thickness of the undoped blocking layer is further limited by comprehensively considering the influence of the energy band bending and the thickness, specifically, the thickness of each layer in the undoped blocking layer is not more than 10nm, and the total thickness of the undoped blocking layer is not more than 50 nm.
In one embodiment, as shown in fig. 1, the electron blocking layer 170 further includes a P-type doped blocking layer 172 stacked on the undoped blocking layer 171, and the band gap width of the P-type doped blocking layer 172 is greater than that of the nth layer structure of the undoped blocking layer 171. In the present embodiment, the electron blocking layer 170 includes an undoped blocking layer 171 and a P-type doped blocking layer 172, and by setting the band gap width relationship of each layer, two potential barriers are formed between the light emitting layer 160 and the P-type epitaxial layer 180, so as to further enhance the electron blocking effect of the electron blocking layer 170. Meanwhile, the P-type doping blocking layer 172 can provide holes for the light emitting layer 160 due to the P-type doping. In one embodiment, the thickness of the P-type doping blocking layer 172 is limited to 20nm to 50nm in consideration of the influence of the thickness of the P-type doping blocking layer 172 on the light emitting efficiency.
In an embodiment, the P-type doped barrier layer 172 is made of InAlGaN, a band gap width and a lattice constant of the InAlGaN have a large adjustable range, and the InAlGaN layer is adopted and can form a good lattice match with the epitaxial layer. In an embodiment, the P-type doped blocking layer 172 is designed to be a first multi-period quantum well structure, specifically, an InAlGaN multi-period quantum well structure, and the P-type doped blocking layer 172 is designed to be a multi-period quantum well structure, which is beneficial to releasing stress. In another embodiment, the P-type doped barrier layer 172 may be designed as an InAlGaN superlattice structure, which is formed by alternately stacking a plurality of InAlGaN layers.
Alternatively, the substrate 110 may be a single layer structure formed of any one of Al2O3, GaN, AlN, AlGaN, AlInGaN, Si, and SiC, or a composite structure formed of a plurality of materials. In one embodiment, as shown in fig. 1, a buffer layer 120 is further formed between the substrate 110 and the N-type epitaxial layer 140, and the thickness of the buffer layer 120 is 10nm to 30 nm. The buffer layer 120 may be a single layer structure formed of any one of GaN, AlGaN, and AlInGaN, or a composite structure formed of these materials.
Optionally, as shown in fig. 1, an undoped layer 130 is further formed between the buffer layer 120 and the N-type epitaxial layer 140, where the undoped layer 130 may be a single-layer structure formed of any one of GaN, AlGaN, and AlInGaN, or a composite structure formed of these materials, and a thickness of the undoped layer 130 may be 1um to 3 um. Optionally, the N-type epitaxial layer 140 has a silicon doping and the doping concentration of silicon may be 1.0E19cm-3～3E19cm-3。
In one embodiment, as shown in fig. 1, a stress adjustment layer 150 is disposed between the N-type epitaxial layer 140 and the light emitting layer 160, the stress adjustment layer 150 has a band gap larger than that of the light emitting layer 160, the stress adjustment layer 150 is a multi-period InAlGaN layer, and the stress adjustment layer 140 is represented by (InAlGaN)nN is more than or equal to 1 and less than or equal to 6, and the total thickness of the stress adjusting layer 140 is not more than 20 nm.
In one embodiment, the light emitting layer 160 includes a second multi-period quantum well structure composed of InAlGaN, wherein the thickness of each potential well layer is 1nm to 4nm, the thickness of each barrier layer is 4nm to 6nm, and the period number of the light emitting layer 160 is 3 to 15.
In one embodiment, the P-type epitaxial layer 180 is also a third multi-period quantum well structure composed of InAlGaN, and the band gap width of the potential well is smaller than that of the potential barrier and larger than that of the light-emitting layer 160 and the P-type doped blocking layer 172, so that electrons can be restricted from entering the P-type epitaxial layer 180 and holes can be facilitated to flow to the light-emitting layer 160. In another embodiment, the P-type epitaxial layer 180 may be designed as an InAlGaN superlattice structure, which is formed by alternately stacking a plurality of InAlGaN layers.
The above examples only show some embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (10)

1. A GaN-based light emitting diode epitaxial structure, comprising:
a substrate;
the N-type epitaxial layer is positioned on the substrate;
the light emitting layer is positioned on the N-type epitaxial layer;
the electron blocking layer comprises undoped blocking layers, the undoped blocking layers comprise first to N layers of structures which are sequentially stacked on the light emitting layer, the band gap width of the first layer of structure is larger than that of the light emitting layer, the band gap widths of the first to N layers of structure are gradually reduced, and N is larger than or equal to 3; and
and the P-type epitaxial layer is positioned on the electron blocking layer.
2. The GaN-based light emitting diode epitaxial structure of claim 1, wherein the undoped barrier layer comprises a three-layer structure, the first layer structure being an InAlGaN layer, the second layer structure being a GaN layer, and the third layer structure being an InGaN layer.
3. The GaN-based light emitting diode epitaxial structure of claim 1, wherein the undoped barrier layer comprises a four-layer structure, the first layer structure being an AlN layer, the second layer structure being an InAlGaN layer, the third layer structure being a GaN layer, and the fourth layer structure being an InGaN layer.
4. The GaN-based light emitting diode epitaxial structure of claim 1, wherein the undoped barrier layer comprises a five-layer structure, the first layer structure being an AlN layer, the second layer structure being an InAlGaN layer, the third layer structure being a GaN layer, the fourth layer structure being an InGaN layer, and the fifth layer structure being InN.
5. The GaN-based light emitting diode epitaxial structure of claim 1, wherein the thickness of each layer structure in the undoped barrier layer is not more than 10 nm.
6. The GaN-based light emitting diode epitaxial structure of claim 1, wherein the electron blocking layer further comprises a P-type doped blocking layer stacked on the undoped blocking layer, the P-type doped blocking layer having a band gap width larger than that of the N-th layer structure.
7. The GaN-based light emitting diode epitaxial structure of claim 6, wherein the P-doped barrier layer comprises a P-doped InAlGaN layer.
8. The GaN-based light emitting diode epitaxial structure of claim 7, wherein the P-type doped barrier layer is a first multi-period quantum well structure comprising a potential barrier and a potential well, the potential well having a band gap width smaller than that of the potential barrier and the potential well having a band gap width larger than that of the light emitting layer.
9. The GaN-based light emitting diode epitaxial structure of claim 6, wherein the thickness of the P-type doped barrier layer is in the range of 20nm to 50 nm.
10. The GaN-based light emitting diode epitaxial structure of claim 1, wherein the light emitting layer comprises a second multicycle quantum well structure comprised of InAlGaN.
CN201910801971.9A 2019-08-28 2019-08-28 GaN-based light emitting diode epitaxial structure Pending CN110635003A (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102544285A (en) * 2012-01-16 2012-07-04 北京大学 Nitride light-emitting device for improving light-emitting efficiency by electron barrier layer
CN103489973A (en) * 2012-06-13 2014-01-01 隆达电子股份有限公司 Semiconductor light emitting structure
CN106206863A (en) * 2015-05-27 2016-12-07 三星电子株式会社 Manufacture the method for Semiconductor substrate and be used for the substrate of semiconductor growing
CN106299038A (en) * 2015-06-04 2017-01-04 东莞市中镓半导体科技有限公司 A kind of method preparing the p-type AlGaN/AlInGaN electronic barrier layer near ultraviolet LED with doping content and Al component step variation
CN108470808A (en) * 2018-03-29 2018-08-31 华灿光电（浙江）有限公司 A kind of LED epitaxial slice and its manufacturing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102544285A (en) * 2012-01-16 2012-07-04 北京大学 Nitride light-emitting device for improving light-emitting efficiency by electron barrier layer
CN103489973A (en) * 2012-06-13 2014-01-01 隆达电子股份有限公司 Semiconductor light emitting structure
CN106206863A (en) * 2015-05-27 2016-12-07 三星电子株式会社 Manufacture the method for Semiconductor substrate and be used for the substrate of semiconductor growing
CN106299038A (en) * 2015-06-04 2017-01-04 东莞市中镓半导体科技有限公司 A kind of method preparing the p-type AlGaN/AlInGaN electronic barrier layer near ultraviolet LED with doping content and Al component step variation
CN108470808A (en) * 2018-03-29 2018-08-31 华灿光电（浙江）有限公司 A kind of LED epitaxial slice and its manufacturing method

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