CN110634935A - Array substrate and display device - Google Patents

Array substrate and display device Download PDF

Info

Publication number
CN110634935A
CN110634935A CN201910936169.0A CN201910936169A CN110634935A CN 110634935 A CN110634935 A CN 110634935A CN 201910936169 A CN201910936169 A CN 201910936169A CN 110634935 A CN110634935 A CN 110634935A
Authority
CN
China
Prior art keywords
area
array substrate
layer
substrate
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910936169.0A
Other languages
Chinese (zh)
Inventor
乐琴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan Tianma Microelectronics Co Ltd
Original Assignee
Wuhan Tianma Microelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan Tianma Microelectronics Co Ltd filed Critical Wuhan Tianma Microelectronics Co Ltd
Priority to CN201910936169.0A priority Critical patent/CN110634935A/en
Publication of CN110634935A publication Critical patent/CN110634935A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65OLEDs integrated with inorganic image sensors

Abstract

The invention discloses an array substrate and a display device, wherein a display area comprises a photosensitive device arrangement area, and when a photosensitive device is arranged at the photosensitive device arrangement area, the problem of large occupied area when the photosensitive device is arranged on a frame can be avoided, so that the frame can be arranged narrowly, the screen occupation ratio is improved, and the design of a narrow frame is realized. And, because of first structure is located the printing opacity district, the second structure is located the pixel place region, and the luminousness of first structure is greater than the luminousness of second structure, can guarantee that the printing opacity district has higher luminousness to the sensitization device can receive more light, in order to improve the performance of sensitization device, and then improve display device's performance. In addition, because of the difference between the first distance and the second distance being smaller than the preset threshold, the functional layer can be ensured to have better smoothness, and further, the influence on the performance of the array substrate due to the occurrence of the segment difference is avoided, so that the reliability of the display device is improved.

Description

Array substrate and display device
Technical Field
The present invention relates to the field of display technologies, and in particular, to an array substrate and a display device.
Background
The electroluminescent display is a self-luminous device, can realize display without arranging a backlight source, and compared with the liquid crystal display, the electroluminescent display can be made thinner and lighter without arranging the backlight source, so that the electroluminescent display can be applied to various scenes.
The display panel in the electroluminescent display generally has a display area and a frame area, the frame area surrounds the display area, and optical devices such as a camera can be arranged in the frame area.
Therefore, how to improve the high screen ratio of the display panel and implement the narrow bezel design is a technical problem to be urgently solved by those skilled in the art.
Disclosure of Invention
The embodiment of the invention provides an array substrate and a display device, which are used for improving the high screen occupation ratio of a display panel and realizing the design of a narrow frame.
In a first aspect, an embodiment of the present invention provides an array substrate, including a display area, where the display area includes a normal display area and a photosensitive device arrangement area, and the normal display area at least partially surrounds the photosensitive device arrangement area;
the display region includes a plurality of pixels, and the photosensitive device setting region includes: a light-transmitting region between adjacent pixels;
the array substrate further includes: the pixel structure comprises a substrate, a functional layer and a planarization layer, wherein the functional layer and the planarization layer are sequentially arranged on the substrate, the functional layer comprises a first structure and a second structure, the first structure is located in the light-transmitting area, and the second structure is located in the area where the pixel is located; the light transmittance of the first structure is greater than that of the second structure; the minimum distance between the surface of one side, away from the substrate base plate, of the first structure and the substrate base plate is a first distance, the minimum distance between the surface of one side, away from the substrate base plate, of the second structure and the substrate base plate is a second distance, and the difference value between the first distance and the second distance is smaller than a preset threshold value.
In a second aspect, an embodiment of the present invention provides a display apparatus, including a display panel and a photosensitive device;
the display panel comprises the array substrate provided by the embodiment of the invention;
the photosensitive device is correspondingly arranged in the photosensitive device arrangement area of the array substrate.
The invention has the following beneficial effects:
according to the array substrate and the display device provided by the embodiment of the invention, firstly, the display area comprises the photosensitive device arrangement area, and when the photosensitive device is arranged at the photosensitive device arrangement area, the problem that the photosensitive device occupies a larger area when arranged on a frame can be avoided, so that the frame arrangement is narrower, the screen occupation ratio is improved, and the design of a narrow frame is realized.
Secondly, through the setting to the functional layer, first structure in the functional layer is located the printing opacity district promptly, and the second structure is located the pixel and locates the region, and the luminousness of first structure is greater than the luminousness of second structure, can guarantee that the printing opacity district has higher luminousness to be convenient for photosensitive device can receive more light, in order to improve photosensitive device's performance, and then improve display device's performance.
Meanwhile, the minimum distance between the surface of one side, away from the substrate base plate, of the first structure and the substrate base plate is a first distance, the minimum distance between the surface of one side, away from the substrate base plate, of the second structure and the substrate base plate is a second distance, and the difference value between the first distance and the second distance is smaller than a preset threshold value, so that the functional layer can be guaranteed to have better smoothness, the influence on the performance of the array base plate due to the fact that the section difference occurs between the light-transmitting area and the area where the pixels are located is avoided, and the reliability of the display device is improved.
Drawings
Fig. 1 is a schematic structural diagram of an array substrate according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another array substrate provided in an embodiment of the invention;
FIG. 3 is an enlarged partial schematic view of the dotted box 1 and dotted box 2 of FIG. 1;
FIG. 4 is a sectional view taken along the line X1-X2 in FIG. 3;
FIG. 5 is another sectional view taken along the line X1-X2 in FIG. 3;
FIG. 6 is a further sectional view taken along the line X1-X2 in FIG. 3;
fig. 7 is a schematic structural diagram of a display device according to an embodiment of the present invention;
fig. 8 is a schematic structural diagram of another display device provided in the embodiment of the present invention.
Wherein, A-display area, B-non-display area, A1-normal display area, G-photosensitive device setting area, T-transparent area, P-pixel area, P1, P2-pixel, 10-substrate base plate, 20-functional layer, 21-first structure, 22-second structure, 22-1-buffer layer, 22-2-grid insulating layer, 22-3-interlayer insulating layer, 22-4-second organic film layer, 22-5-first insulating layer, 22-6-second insulating layer, 30-planarization layer, 40-pixel limiting layer, 41-opening area, 50 a-first voltage signal line, 50B-connecting wiring, 100-display panel, 101-array base plate, 102-opposite substrate, 200-photosensitive device, M-display device.
Detailed Description
Embodiments of an array substrate and a display device according to embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be noted that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The inventor finds in research that the display panel comprises a display area, the display area comprises a photosensitive device arrangement area and a conventional display area, the conventional display area at least partially surrounds the photosensitive device arrangement area, a plurality of pixels are arranged in the display area, and a light transmission area is arranged between adjacent pixels in the photosensitive device arrangement area.
In order to improve the light transmittance of the photosensitive device region, it is common to remove the film layers in the light-transmitting region, for example, remove the buffer layer, the gate insulating layer, the interlayer insulating layer, the planarization layer, and the pixel defining layer, which are sequentially located above the substrate in the light-transmitting region. In a top gate transistor, for example, a gate insulating layer is typically disposed between an active layer and a gate, an interlayer insulating layer is typically disposed between the gate and a source/drain, and a planarization layer is disposed on a side of the source/drain away from a substrate.
In order to obtain a transistor, it is necessary to make a via hole in the gate insulating layer and the interlayer insulating layer to electrically connect the source/drain with the active layer. However, if the buffer layer, the gate insulating layer, and the interlayer insulating layer in the light-transmitting region are removed, a step difference exists between the light-transmitting region and the pixel region.
Due to the fact that a photoetching process is generally adopted when the through hole is manufactured, due to the fact that the section difference exists between the light-transmitting area and the area where the pixel is located, on one hand, accurate focusing cannot be achieved during exposure focusing, position deviation or insufficient through hole etching depth can be caused when the through hole is manufactured, and finally, the source/drain electrode and the active layer cannot be effectively electrically connected, the performance of the transistor is affected, and accordingly reliability of the display panel is reduced. On the other hand, a photoresist may remain in the light-transmitting region, and the photoresist in the light-transmitting region may adversely affect the transmittance, thereby causing a decrease in the transmittance.
Accordingly, the embodiment of the invention provides an array substrate, which is used for improving the light transmittance and improving the reliability of a display panel.
An embodiment of the present invention provides an array substrate, as shown in fig. 1 to 6, where fig. 1 is a schematic structural diagram of an array substrate, fig. 2 is a schematic structural diagram of another array substrate, fig. 3 is a schematic partial enlarged diagram of a dashed line frame 1 and a dashed line frame 2 in fig. 1, fig. 4 is a cross-sectional view taken along a direction X1-X2 in fig. 3, fig. 5 is another cross-sectional view taken along a direction X1-X2 in fig. 3, and fig. 6 is another cross-sectional view taken along a direction X1-X2 in fig. 3.
Referring to fig. 1 to 6, the array substrate may include a display area a including a general display area a1 and a photosensitive device disposition area G, the general display area a1 at least partially surrounding the photosensitive device disposition area G;
the shape of the photosensitive device disposing area G may be a square (as shown in fig. 1), an ellipse (as shown in fig. 2) or other shapes, and may be disposed according to the shape of the photosensitive device, which is not limited herein.
Also, the photosensitive device disposition region G may be located at an edge of the display region a, disposed near the non-display region B, i.e., the regular display region a1 partially surrounds the photosensitive device disposition region G, as shown in fig. 1; alternatively, the photosensitive device disposition region G may also be located inside the display region a, i.e., the regular display region a1 completely surrounds the photosensitive device disposition region G, as shown in fig. 2; as long as the photosensitive device can normally operate, the position of the photosensitive device installation region G may be designed according to practical situations, and is not limited herein.
Referring to fig. 3, the display region a includes a plurality of pixels (e.g., P1, P2), and the photosensitive device disposing region G includes: a light-transmitting region T between adjacent pixels;
referring to fig. 4 to 6, the array substrate further includes: a substrate 10, and a functional layer 20 and a planarization layer 30 sequentially disposed on the substrate 10, wherein the functional layer 20 includes a first structure 21 and a second structure 22, the first structure 21 is located in the light-transmitting region T, and the second structure 22 is located in a region where a pixel is located (e.g., a region indicated by P in fig. 4 to 6); the light transmittance of the first structure 21 is greater than that of the second structure 22; the minimum distance between the surface of the first structure 21 facing away from the base substrate 10 and the base substrate 10 is a first distance (e.g. h1), the minimum distance between the surface of the second structure 22 facing away from the base substrate 10 and the base substrate 10 is a second distance (e.g. h2), and the difference between the first distance h1 and the second distance h2 is smaller than a preset threshold value.
In the embodiment of the invention, the display area comprises the photosensitive device setting area G, and when the photosensitive device is arranged in the photosensitive device setting area G, the problem of large occupied area when the photosensitive device is arranged in the frame can be avoided, so that the frame can be arranged narrowly, the screen occupation ratio is improved, and the design of the narrow frame is realized.
And, through the setting to functional layer 20, first structure 21 in functional layer 20 is located the printing opacity district promptly, and second structure 22 is located the pixel region, and the luminousness of first structure 21 is greater than the luminousness of second structure 22, can guarantee that the printing opacity district has higher luminousness to the sensitization device can receive more light, in order to improve the performance of sensitization device, and then improve display device's performance.
In addition, the minimum distance between the surface of the first structure 21 away from the substrate 10 and the substrate 10 is the first distance h1, the minimum distance between the surface of the second structure 22 away from the substrate 10 and the substrate 10 is the second distance h2, the difference between the first distance h1 and the second distance h2 is smaller than a preset threshold, so that the functional layer 20 can be ensured to have better flatness, adverse effects on subsequent etching processes due to the difference of sections inside the functional layer 20 are avoided, and then the performance of the array substrate is prevented from being affected, thereby improving the reliability of the display device.
Optionally, in the embodiment of the present invention, the preset threshold may be greater than or equal to zero and less than or equal to 1.6 micrometers.
Wherein, under the current preparation process condition, the deviation may appear in the manufacturing process, the thickness of the first structure and the second structure that the preparation obtained promptly may appear the deviation with required thickness, but if the difference is less than or equal to 1.6 microns between first distance and the second distance, can make the functional layer deviate from substrate one side and have better roughness, avoid causing harmful effects to subsequent etching process because of the functional layer is inside to appear the segment difference, then avoid causing the influence to the performance of array substrate, thereby improve display device's reliability.
In practical implementation, in the embodiment of the present invention, the first structure 21 may be a single-film structure, and the second structure 22 may be a multi-film structure, as shown in fig. 4 to 6.
Therefore, the manufacturing process of the first structure 21 can be simplified, and the first structure 21 is prevented from being completed by adopting a plurality of manufacturing processes when being of a multi-film structure, so that the manufacturing difficulty of the array substrate is reduced, and the manufacturing difficulty of the display panel is reduced; in addition, the structure of the area where the pixel is located is favorably prevented from being greatly influenced, so that the normal display of the pixel is favorably ensured.
Specifically, in an embodiment of the present invention, the first structure includes a transparent first organic film layer;
the second structure includes: a plurality of inorganic film layers which are arranged in a laminated manner.
In practical situations, the second structure includes a plurality of inorganic film layers, so that the manufacturing process of the first structure can be simplified on the basis of avoiding great influence on the structure in the area where the pixel is located, and the first structure can be ensured to have high light transmittance, thereby improving the reliability of the display panel.
Moreover, according to experimental results, compared with the display panel obtained when the light-transmitting area is set by adopting the second structure in the prior art, the light transmittance of the display panel manufactured by adopting the array substrate provided by the embodiment of the invention is improved by 44%, more light can be provided for the photosensitive device, the working performance of the photosensitive device is greatly improved, and the reliability of the display device is greatly improved.
Optionally, in the embodiment of the present invention, the thicknesses of the first structure and the second structure may be set to be 1 to 3 micrometers, so as to ensure that the photosensitive device setting region has higher light transmittance and the array substrate has smaller thickness, thereby improving the reliability of the display device and realizing a light and thin design.
Of course, in practical cases, the thicknesses of the first structure and the second structure may be set to other ranges according to practical needs, and are not limited herein as long as the reliability of the display device can be improved.
Optionally, in the embodiment of the present invention, the first structure and the planarization layer are made of the same material.
Therefore, the planarization layer and the first structure can be manufactured by the same process, the manufacturing process of the array substrate is simplified, the manufacturing difficulty of the array substrate is reduced, and the light transmittance is improved while the reliability of the display panel is improved.
Optionally, in an embodiment of the present invention, the first structure and the planarization layer are made of polymethyl methacrylate.
Of course, in practical cases, when the first structure and the planarization layer are manufactured, other materials that can achieve the functions of the first structure and the planarization layer may also be used, and are not limited herein.
Specifically, in the embodiment of the present invention, the second structure 22 may include: a buffer layer 22-1, a gate insulating layer 22-2, and an interlayer insulating layer 22-3, which are stacked, as shown in fig. 4;
the pixel comprises a transistor TFT, a buffer layer 22-1 is positioned between the substrate base plate 10 and the transistor TFT, and a grid insulation layer 22-2 is positioned between a grid electrode and an active layer of the transistor TFT;
the transistor TFT is a top gate type transistor TFT, and the interlayer insulating layer 22-3 is located between the gate and the source/drain of the transistor TFT, as shown in fig. 4;
alternatively, the transistor is a bottom-gate transistor, and an interlayer insulating layer is provided between an active layer and a source/drain of the transistor, which is not shown.
To illustrate, optionally, when the array substrate provided in the embodiment of the present invention is an array substrate in an electroluminescent display panel, a first voltage signal line (e.g., PVDD) is generally disposed in the array substrate and is used for providing a first voltage signal to a pixel circuit in a pixel to drive a light emitting unit in the pixel to emit light; the first voltage signal line may be made of the same material and disposed in the same layer as the source/drain of the transistor TFT, as shown in fig. 5 as 50 a.
In practical situations, since the light-emitting luminance of a light-emitting unit is affected by the magnitude of the current flowing through the light-emitting unit, i.e., the greater the current flowing through the light-emitting unit, the greater the light-emitting luminance of the light-emitting unit, and the smaller the current flowing through the light-emitting unit, the smaller the light-emitting luminance of the light-emitting unit; therefore, to make the luminance of the light emitting unit meet the requirement, it is necessary to effectively control the current flowing through the light emitting unit. Also, the magnitude of the current flowing through the light emitting unit is affected by the first voltage signal, so it becomes important to ensure the stability of the first voltage signal.
Therefore, in order to reduce the delay on the first voltage signal line and ensure the effective transmission of the first voltage signal, a connection trace 50b may be disposed on one side of the source/drain of the transistor TFT close to the planarization layer, as shown in fig. 5, and the connection trace 50b is electrically connected to the first voltage signal line 50a, so as to reduce the delay and voltage drop on the first voltage signal line 50a and ensure the effective transmission of the first voltage signal, thereby achieving the effective control of the light emitting brightness of the light emitting unit.
Specifically, in an actual situation, the extending directions of the first voltage signal lines and the connecting wires, the arrangement manner of the first voltage signal lines, and the arrangement manner of the connecting wires may be set according to actual needs, as long as the display effect of the display panel can be improved, which is not limited herein.
Based on this, in the embodiment of the present invention, when the array substrate further includes the connection trace 50b, and the connection trace 50b is located on one side of the source/drain of the transistor TFT, which is close to the planarization layer 30, as shown in fig. 5, the second structure 22 further includes a second organic film layer 22-4, and the second organic film layer 22-4 is located between the source/drain of the transistor TFT and the film layer where the connection trace 50b is located;
the second organic film layer 22-4 is made of the same material as the first organic film layer (i.e., the first structure 21).
Therefore, the first structure 21 and the second organic film layer 22-4 can be manufactured by the same process, so that the manufacturing process of the array substrate is simplified, the manufacturing difficulty of the array substrate is reduced, the manufacturing difficulty of the display panel is reduced, and the display effect of the display panel is improved.
It should be further noted that, optionally, in the pixel circuit, a transistor TFT and a capacitor C are generally included, where the capacitor C has a first end and a second end, the first end may be made of the same material and disposed in the same layer as the gate electrode of the transistor TFT, and the second end may be located in a film layer between the gate electrode of the transistor TFT and the source/drain electrode of the transistor TFT, as shown in fig. 6, in a direction pointing to the planarization layer 30 along the substrate 10, the second structure 22 includes the following film layers in sequence: the buffer layer 22-1, the gate insulating layer 22-2, the interlayer insulating layer 22-3, the first insulating layer 22-5, the second insulating layer 22-6, and the second organic film layer 22-4, respectively, have a first distance denoted by h1 and a second distance denoted by h2, where h1 is equal to h2 in fig. 6.
Therefore, the normal display function of the display panel is guaranteed, the thickness of the array substrate is reduced, the structure of the array substrate is optimized, and the light and thin design of the display panel is achieved.
In a specific implementation, in an embodiment of the present invention, the array substrate further includes: the pixel defining layer is positioned on one side, away from the substrate, of the planarization layer;
the pixel defining layer comprises a first area and a second area, the first area is located in the light transmission area, the second area is located in the other areas except the light transmission area in the display area, and the maximum thickness of the pixel defining layer in the first area is equal to the maximum thickness of the pixel defining layer in the second area.
For example, taking the structure shown in fig. 5 as an example, in fig. 5, the first region may be a region denoted by T, and the second region may be a region denoted by P, in order to realize the display function, the pixel defining layer 40 is generally provided with an opening region 41, an anode, a light emitting layer, and a cathode may be provided in the opening region 41, only the anode Y is shown in the figure, positive charges and negative charges are injected into the light emitting layer by the anode Y and the cathode, respectively, so that the recombination of the positive charges and the negative charges in the light emitting layer generates energy, and the generated energy can excite the light emitting material in the light emitting layer to emit light, thereby realizing the display function.
Based on this, the maximum thickness of the pixel defining layer 40 in the second region is the maximum thickness of the region excluding the opening region 41, which is denoted by h3, and the maximum thickness of the pixel defining layer 40 in the first region is denoted by h4, where h3 is equal to h 4.
Therefore, the thickness consistency of the array substrate is favorably ensured, the thickness consistency of the display panel is favorably ensured, and the light and thin design is realized.
Specifically, in practical cases, a substrate is fabricated with many inorganic film layers, such as the inorganic film layers included in the second structure, and the inorganic material cannot be made thick due to the limitation of the fabrication process of the inorganic material, i.e., the inorganic film layers on the substrate are generally thin. However, if the first structure is made of an inorganic material, the thickness of the obtained first structure is greatly limited, and the second structure further includes a plurality of conductive layers to achieve different functions, so that the first structure made of the inorganic material cannot effectively eliminate a step difference between the first structure and the second structure, which may cause the transistor to fail to operate normally and reduce the reliability of the array substrate.
Therefore, in the embodiment of the invention, only the organic film layer is arranged on the substrate in the light-transmitting area.
That is to say, by adopting the organic material to make the first structure, on the basis of ensuring feasible, realizable and operable process, the segment difference between the first structure and the second structure can be effectively eliminated, the source/drain electrode in the transistor can be ensured to be effectively and electrically connected with the active layer, and the transistor can be ensured to normally work, so that the reliability of the array substrate is improved.
In specific implementation, in order to improve the light transmittance of the photosensitive device disposition region G, in the embodiment of the present invention, the disposition density of the pixels in the normal display region a1 is greater than the disposition density of the pixels in the photosensitive device disposition region G, as shown in fig. 3.
Of course, the arrangement of the pixels in the photosensitive device disposing area G is not limited to that shown in fig. 3, and may be any other arrangement, which is not limited herein.
Therefore, the photosensitive device setting area G can still have a display function by setting the pixels in the photosensitive device setting area G, so that the display uniformity is improved; and, through reducing the pixel density that photosensitive device set up in regional G, can make photosensitive device set up regional G and have higher luminousness, and then make and set up the photosensitive device that photosensitive device set up regional G department and can receive more light, guarantee that photosensitive device can normally work, improve display device's reliability.
Alternatively, in order to improve display uniformity, in the embodiment of the present invention, the orthogonal projection of the pixels in the regular display region a1 to the substrate base plate 10 is a first projection, and the orthogonal projection of the pixels in the photosensitive device disposition region G to the substrate base plate 10 is a second projection, and the area of the first projection is smaller than that of the second projection.
For example, as shown in fig. 3, the first projection may be represented by P1 and the second projection may be represented by P2, wherein the area of the first projection P1 is smaller than the area of the second projection P2.
In this way, the luminance of the pixels in the photosensitive device arrangement region G can be increased to have higher luminance when the pixel density in the photosensitive device arrangement region G is lower, and the luminance difference between the photosensitive device arrangement region G and the normal display region a1 is reduced, thereby improving the display uniformity.
Based on the same inventive concept, the embodiment of the present invention provides a display apparatus, such as the schematic structural diagram of the display apparatus shown in fig. 7, including a display panel 100 and a photosensitive device 200;
the display panel 100 includes the array substrate 101 provided in the embodiment of the present invention;
the photosensitive device 200 corresponds to the photosensitive device disposition region G disposed on the array substrate 101.
Optionally, as shown in fig. 7, the display panel 100 may further include an opposite substrate 102 in addition to the array substrate 101, wherein the opposite substrate 102 may be, but is not limited to, a touch substrate, so that the display device is a display device with a touch function.
Alternatively, in the embodiment of the present invention, the photosensitive device 200 may be a camera or a fingerprint recognition device, or other devices that can operate by using light incident from the outside, and is not limited herein.
In a specific implementation, the display device may be: any product or component with a display function, such as a mobile phone (as shown in fig. 8), a tablet computer, a television, a display, a notebook computer, a digital photo frame, and a navigator. The implementation of the display device can refer to the above embodiments of the array substrate, and repeated descriptions are omitted.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.

Claims (14)

1. An array substrate is characterized by comprising a display area and a light sensing device arrangement area, wherein the display area comprises a regular display area and the light sensing device arrangement area, and the regular display area at least partially surrounds the light sensing device arrangement area;
the display region includes a plurality of pixels, and the photosensitive device setting region includes: a light-transmitting region between adjacent pixels;
the array substrate further includes: the pixel structure comprises a substrate, a functional layer and a planarization layer, wherein the functional layer and the planarization layer are sequentially arranged on the substrate, the functional layer comprises a first structure and a second structure, the first structure is located in the light-transmitting area, and the second structure is located in the area where the pixel is located; the light transmittance of the first structure is greater than that of the second structure; the minimum distance between the surface of one side, away from the substrate base plate, of the first structure and the substrate base plate is a first distance, the minimum distance between the surface of one side, away from the substrate base plate, of the second structure and the substrate base plate is a second distance, and the difference value between the first distance and the second distance is smaller than a preset threshold value.
2. The array substrate of claim 1, wherein the predetermined threshold is greater than or equal to zero and less than or equal to 1.6 microns.
3. The array substrate of claim 1, wherein the first structure is a single film layer structure and the second structure is a multi-film layer structure.
4. The array substrate of claim 3, wherein the first structure and the second structure each have a thickness of 1 micron to 3 microns.
5. The array substrate of claim 3, wherein the first structure comprises a transparent first organic film layer;
the second structure includes: a plurality of inorganic film layers which are arranged in a laminated manner.
6. The array substrate of claim 5, wherein the first structure is made of the same material as the planarization layer.
7. The array substrate of claim 6, wherein the first structure and the planarization layer are made of polymethyl methacrylate.
8. The array substrate of claim 5, wherein the second structure comprises: a buffer layer, a gate insulating layer, and an interlayer insulating layer stacked;
the pixel comprises a transistor, the buffer layer is positioned between the substrate base plate and the transistor, and the grid insulation layer is positioned between the grid of the transistor and the active layer;
the transistor is a top gate type transistor, and the interlayer insulating layer is positioned between a gate and a source/drain of the transistor; or, the transistor is a bottom gate transistor, and the interlayer insulating layer is positioned between an active layer and a source/drain electrode of the transistor.
9. The array substrate of claim 8, wherein the array substrate further comprises a connection trace located on a side of the source/drain of the transistor near the planarization layer;
the second structure further comprises a second organic film layer, and the second organic film layer is located between the source/drain electrode of the transistor and the film layer where the connecting wiring is located;
the second organic film layer and the first organic film layer are made of the same material.
10. The array substrate of claim 1, wherein the array substrate further comprises: a pixel defining layer on a side of the planarization layer facing away from the substrate base plate;
the pixel defining layer comprises a first area and a second area, the first area is located in the light-transmitting area, the second area is located in the display area except the light-transmitting area, and the maximum thickness of the pixel defining layer in the first area is equal to the maximum thickness of the pixel defining layer in the second area.
11. The array substrate of claim 10, wherein only an organic film layer is disposed on the substrate in the light-transmitting region.
12. The array substrate of any one of claims 1-11, wherein a placement density of pixels in the regular display area is greater than a placement density of pixels in the photosensitive device placement area.
13. The array substrate of claim 12, wherein the orthographic projection of the pixels in the regular display area to the substrate is a first projection, the orthographic projection of the pixels in the photosensitive device arrangement area to the substrate is a second projection, and the area of the first projection is smaller than the area of the second projection.
14. A display device is characterized by comprising a display panel and a photosensitive device;
the display panel comprises the array substrate of any one of claims 1-13;
the photosensitive device is correspondingly arranged in the photosensitive device arrangement area of the array substrate.
CN201910936169.0A 2019-09-29 2019-09-29 Array substrate and display device Pending CN110634935A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910936169.0A CN110634935A (en) 2019-09-29 2019-09-29 Array substrate and display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910936169.0A CN110634935A (en) 2019-09-29 2019-09-29 Array substrate and display device

Publications (1)

Publication Number Publication Date
CN110634935A true CN110634935A (en) 2019-12-31

Family

ID=68973568

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910936169.0A Pending CN110634935A (en) 2019-09-29 2019-09-29 Array substrate and display device

Country Status (1)

Country Link
CN (1) CN110634935A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111653606A (en) * 2020-06-28 2020-09-11 武汉华星光电技术有限公司 Display panel integrated with ambient light sensor, display device and preparation method of display device
US11532690B2 (en) 2020-08-28 2022-12-20 Boe Technology Group Co., Ltd. Display panel and display device

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102646695A (en) * 2011-02-18 2012-08-22 三星移动显示器株式会社 Organic electroluminescence display device and method of manufacturing same
US20140183472A1 (en) * 2012-12-27 2014-07-03 Lg Display Co., Ltd. Transparent organic light emitting display device and method for manufacturing the same
CN204179085U (en) * 2014-11-26 2015-02-25 京东方科技集团股份有限公司 A kind of organic LED array substrate and display unit
CN104867958A (en) * 2015-04-01 2015-08-26 京东方科技集团股份有限公司 Organic electroluminescence display substrate and manufacturing method thereof, and display apparatus
US20170179441A1 (en) * 2015-12-21 2017-06-22 Samsung Display Co., Ltd. Transparent display device
CN109887984A (en) * 2019-03-21 2019-06-14 京东方科技集团股份有限公司 Organic light emitting display panel, electronic equipment and manufacturing method
CN110164928A (en) * 2019-05-16 2019-08-23 深圳市华星光电半导体显示技术有限公司 Display panel and electronic equipment
CN110277423A (en) * 2019-06-28 2019-09-24 京东方科技集团股份有限公司 The production method and display panel and display device of a kind of display panel

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102646695A (en) * 2011-02-18 2012-08-22 三星移动显示器株式会社 Organic electroluminescence display device and method of manufacturing same
US20140183472A1 (en) * 2012-12-27 2014-07-03 Lg Display Co., Ltd. Transparent organic light emitting display device and method for manufacturing the same
CN204179085U (en) * 2014-11-26 2015-02-25 京东方科技集团股份有限公司 A kind of organic LED array substrate and display unit
CN104867958A (en) * 2015-04-01 2015-08-26 京东方科技集团股份有限公司 Organic electroluminescence display substrate and manufacturing method thereof, and display apparatus
US20170179441A1 (en) * 2015-12-21 2017-06-22 Samsung Display Co., Ltd. Transparent display device
CN109887984A (en) * 2019-03-21 2019-06-14 京东方科技集团股份有限公司 Organic light emitting display panel, electronic equipment and manufacturing method
CN110164928A (en) * 2019-05-16 2019-08-23 深圳市华星光电半导体显示技术有限公司 Display panel and electronic equipment
CN110277423A (en) * 2019-06-28 2019-09-24 京东方科技集团股份有限公司 The production method and display panel and display device of a kind of display panel

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111653606A (en) * 2020-06-28 2020-09-11 武汉华星光电技术有限公司 Display panel integrated with ambient light sensor, display device and preparation method of display device
CN111653606B (en) * 2020-06-28 2022-09-09 武汉华星光电技术有限公司 Display panel integrated with ambient light sensor, display device and preparation method of display device
US11532690B2 (en) 2020-08-28 2022-12-20 Boe Technology Group Co., Ltd. Display panel and display device
US11930676B2 (en) 2020-08-28 2024-03-12 Boe Technology Group Co., Ltd. Display panel and display device

Similar Documents

Publication Publication Date Title
TWI602306B (en) Array substrate structure and display device
US20210183977A1 (en) Display panel and method of fabricating same
CN110047899B (en) Display panel, display device and manufacturing method
WO2018205651A1 (en) Oled touch-control display panel and manufacturing method therefor, and touch-control display apparatus
CN108470762B (en) Flexible display panel and display device
CN111211145A (en) Display device
WO2020206977A1 (en) Display panel and fabrication method therefor, and semiconductor structure
CN110289304B (en) Display device
WO2021143366A1 (en) Display panel and display device
WO2021093687A1 (en) Display substrate and preparation method therefor, and display apparatus
US11527735B2 (en) Flexible display panel with connecting portion and flexible bridging portion, method for manufacturing the same and display device
US11043545B2 (en) Display substrate, fabricating method thereof, and display device
US11758770B2 (en) Display panel and display device with pixel electrode overlapping transparent wires configured to reduce laser-etching damage
US20210175313A1 (en) Organic light-emitting diode display panel
WO2021036088A1 (en) Display panel and display apparatus
CN113345929A (en) Display substrate, preparation method thereof and display device
CN110634935A (en) Array substrate and display device
US11133488B2 (en) Display substrate, display apparatus, and method of fabricating display substrate having enclosure ring in buffer area
EP3731279A1 (en) Substrate and manufacturing method therefor, and electronic apparatus
WO2023202419A1 (en) Display panel and display apparatus
CN109671724B (en) Light-emitting panel and display device
KR20240025042A (en) Display panel, display device and manufacturing method of display panel
US20220045140A1 (en) Display panel, method for manufacturing the same, display device and method for manufacturing the same
CN111028687B (en) Display panel and display device
CN115050787A (en) Display panel, manufacturing method and display device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20191231

RJ01 Rejection of invention patent application after publication