CN110632829A - Photoetching process method - Google Patents
Photoetching process method Download PDFInfo
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- CN110632829A CN110632829A CN201911053214.4A CN201911053214A CN110632829A CN 110632829 A CN110632829 A CN 110632829A CN 201911053214 A CN201911053214 A CN 201911053214A CN 110632829 A CN110632829 A CN 110632829A
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- exposure
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- lithographic process
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7026—Focusing
Abstract
The invention discloses a photoetching process method, which comprises the following steps: step one, calculating the optimal focal length and the focusing depth of exposure in the photoetching process; coating a first photoresist on the first wafer, wherein the thickness of the first photoresist is greater than the focusing depth; thirdly, carrying out multiple exposures from the bottom of the first photoresist, wherein each exposure before the last exposure is used for respectively processing a sublayer with the DOF thickness in the first photoresist, and the sublayers are sequentially overlapped from the bottom to the top of the first photoresist, the overlapping thickness of each sublayer is smaller than that of the first photoresist, a residual topmost sublayer is formed on the top of the first photoresist, the thickness of the topmost sublayer is smaller than or equal to the DOF, and the last exposure is used for processing the topmost sublayer; and step four, developing the first photoresist. The invention can increase the focusing depth of the thick photoresist process and improve the resolution and the process window.
Description
Technical Field
The present invention relates to semiconductor integrated circuit manufacturing methods, and more particularly, to a photolithography process.
Background
Photolithography is a process of transferring a pattern previously prepared on a Mask plate (Mask) onto a substrate using the principle of photochemical reaction. Depth-of-focus (DOF) is an important parameter for measuring the lithography process window, and it marks the relationship between the imaging quality of the exposure system and the wafer surface position. Within the depth of focus range, the quality of the exposure imaging can be guaranteed.
FIG. 1 is a schematic view of the depth of focus of an exposure in a lithographic process; in the exposure process, after the light source 101 passes through a Mask (Mask)102, a pattern on the Mask 102 diffracts light to form a corresponding Diffracted Image (Diffracted Image)103, then the light 105 converges through a lens group (lens)104 to form a combined Image 106, and the combined Image 106 performs a photochemical reaction on the photoresist to form a corresponding pattern on the photoresist. A photoresist is formed on the wafer 107. The light 105 passing through the lens assembly 104 is divided into-1 order light, 0 order light and 1 order light, which are respectively labeled as-1, 0 and 1. An enlarged focus of the light 105 is shown by an arrow 108, and it can be seen that the intersection position of the-1 st order light, the 0 th order light and the 1 st order light is a focus position, and a range of a certain distance above and below the focus position still can achieve good exposure, and the range capable of achieving good exposure is DOF.
Generally, the depth of focus is greater than the photoresist height on the wafer surface, and one exposure can ensure that the bottom and top of the photoresist are both within the focus range. With the decrease of the line width and the increase of the thickness of the photoresist required by the manufacturing process, the condition that the height of the photoresist is larger than the focusing depth often occurs, so that the bottom or the top of the photoresist is not in the focusing depth range, thereby causing the defocusing of the pattern and influencing the exposure resolution and the process window. As shown in fig. 2, it is a schematic diagram of photoresist defocus (defocus) when the height of the photoresist is greater than the depth of focus in the conventional photolithography process; the thickness of the photoresist 201 is H, H > DOF, the existing method can only expose the sub-layer 2022 from the surface of the photoresist 201 to the extent that the thickness is DOF, the sub-layer 2021 at the bottom of the sub-layer 2022 is an out-of-focus part, the sub-layer 2021 is also represented by Defocus, the sub-layer 2021 cannot realize good exposure, and the pattern can not meet the requirement.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a photoetching process method, which can increase the focusing depth of a thick photoresist manufacturing process and improve the resolution and the process window.
In order to solve the technical problem, the photoetching process method provided by the invention comprises the following steps:
step one, calculating the optimal focal length and the focusing depth of exposure in the photoetching process; let the best focal length be f and the depth of focus be DOF.
And secondly, coating a first photoresist on the first wafer, wherein the thickness of the first photoresist is H, and H is larger than DOF.
And thirdly, carrying out multiple exposures from the bottom of the first photoresist, wherein the exposure times are determined according to the size relationship between H and DOF, each exposure before the last exposure is used for respectively processing a sublayer with the thickness of DOF in the first photoresist, the sublayers are sequentially overlapped from the bottom to the top of the first photoresist, the overlapping thickness of each sublayer is smaller than the thickness of the first photoresist, a residual topmost sublayer is formed at the top of the first photoresist, the thickness of the topmost sublayer is smaller than or equal to the DOF, and the last exposure is used for processing the topmost sublayer.
And step four, developing the first photoresist.
The further improvement is that the first step is realized by adopting the following sub-steps:
and 11, coating and coating a second photoresist on the second wafer, wherein the thickness of the second photoresist is H1, and H1 is smaller than H.
And 12, exposing and developing the second wafer in a mode of forming a focusing energy matrix.
And step 13, measuring the focusing energy matrix and calculating the optimal focal length and the focusing depth according to the measurement result.
The further improvement is that H1 is H/4-3H/4 in step 11.
In a further improvement, H1 is H/2 in step 11.
In a further refinement, the exposure step in the manner of forming the focused energy matrix in step 12 is:
and during exposure, the energy change with fixed step length is carried out along the X direction of the second wafer, and the focus value change is carried out along the Y direction.
In a further improvement, in step 12, the step size of the energy change along the X direction is 0.1mj to 10 mj.
In a further improvement, in step 12, the focus value along the Y direction is varied by a step size of 10nm to 200 nm.
In a further improvement, the optimal focal length in step 13 is a focal length at which the line width is least sensitive to the variation of the focus value.
In a further improvement, in step 13, the depth of focus is a focus value variation range within a variation range where the line width is 5% to 10% of the target value.
The further improvement is that when H is less than or equal to 2DOF, two exposures are carried out in the third step; let the focal length of the first exposure be f1 and the focal length of the second exposure be f 2; then there are:
f1＝f；
f2＝f-DOF。
the further improvement is that when n-1DOF < H ≦ nDOF and n is an integer greater than 2, n exposures are carried out in the third step; let the focal length of the k-th exposure be fk, k being any integer between 1 and n; then there are:
fk＝f+H/2-k*DOF。
the further improvement is that when H1 is less than or equal to DOF, two exposures are carried out in the third step; let the focal length of the first exposure be f1 and the focal length of the second exposure be f 2; then there are:
f1＝f；
f2＝f-DOF。
the further improvement is that when n-1DOF < H ≦ nDOF and n is an integer greater than 2, n exposures are carried out in the third step; let the focal length of the k-th exposure be fk, k being any integer between 1 and n; then there are:
fk＝f+H1-k*DOF。
in a further improvement, n is 6 or more.
The further improvement is that H in step two is changed to H less than or equal to DOF; at this time, one exposure is performed in step three, and the exposure employs f measured in step one.
According to the invention, the optimal focal length and the focusing depth of exposure are measured in advance, then multiple exposure is carried out by combining the thickness of the photoresist on the basis of the optimal focal length and the focusing depth, so that the photoresist sublayers in the focusing depth range are processed once by each exposure, the multiple exposure is realized by sequentially processing the sublayers of the longitudinally superposed photoresist, and finally the processing of the photoresist in the whole thickness range is realized.
Drawings
The invention is described in further detail below with reference to the following figures and detailed description:
FIG. 1 is a schematic illustration of depth of focus of an exposure in a lithographic process;
FIG. 2 is a schematic diagram of photoresist defocus when the photoresist height is greater than the depth of focus in a prior art photolithography process;
FIG. 3 is a flow chart of a photolithography process according to a first embodiment of the present invention;
FIGS. 4A-4B are schematic views of the photoresist structure during exposure by the photolithography process of the first embodiment of the present invention;
fig. 5A-5C are schematic views of the photoresist structure during exposure according to the photolithography process of the second embodiment of the present invention.
Detailed Description
The photoetching process method of the first embodiment of the invention comprises the following steps:
FIG. 3 is a flow chart of a photolithography process according to a first embodiment of the present invention; fig. 4A to 4B are schematic views of a photoresist structure in an exposure process of a photolithography process according to a first embodiment of the present invention; the photoetching process method of the first embodiment of the invention comprises the following steps:
step one, calculating the optimal focal length and the focusing depth of exposure in the photoetching process; let the best focal length be f and the depth of focus be DOF.
The first step is realized by adopting the following sub-steps:
and 11, coating a second photoresist on the second wafer, wherein the thickness of the second photoresist is H1, and H1 is smaller than H.
The second wafer can be the subsequent first wafer, and can also be other wafers.
In the first embodiment of the present invention, H1 is H/2, and H1 is preferably H/2 to facilitate faster determination of the best focus and depth of focus. In other embodiments, this can also be: h1 is any value of H/4-3H/4.
And 12, exposing and developing the second wafer in a mode of forming a focusing energy matrix.
The exposure steps of the manner of forming the focused energy matrix are:
and during exposure, the energy change with fixed step length is carried out along the X direction of the second wafer, and the focus value change is carried out along the Y direction.
The step size of the energy change along the X direction is 0.1mj to 10 mj.
The step length of the change of the focusing value along the Y direction is 10 nm-200 nm.
As each step of change in the X direction and the Y direction forms a corresponding exposure point, the matrix structure formed by all the exposure points is the focusing energy matrix. In the focusing energy matrix, the focusing values of the exposure points in the same row in the X direction are the same, and the exposure energy is gradually changed; the focus values of the same row of exposure points in the Y direction gradually change, and the exposure energy is the same.
And step 13, measuring the focusing energy matrix and calculating the optimal focal length and the focusing depth according to the measurement result.
And the optimal focal length is the focal length with the line width which is least sensitive to the change of the focusing value.
The focusing depth is a focusing value variation range with the line width being 5% -10% of the target value.
And secondly, coating a first photoresist on the first wafer, wherein the thickness of the first photoresist is H, and H is larger than DOF.
And thirdly, carrying out multiple exposures from the bottom of the first photoresist, wherein the exposure times are determined according to the size relationship between H and DOF, each exposure before the last exposure is used for respectively processing a sublayer with the thickness of DOF in the first photoresist, the sublayers are sequentially overlapped from the bottom to the top of the first photoresist, the overlapping thickness of each sublayer is smaller than the thickness of the first photoresist, a residual topmost sublayer is formed at the top of the first photoresist, the thickness of the topmost sublayer is smaller than or equal to the DOF, and the last exposure is used for processing the topmost sublayer.
In the first embodiment of the invention, H is less than or equal to 2DOF, and two exposures are carried out in the third step. Let the focal length of the first exposure be f1 and the focal length of the second exposure be f 2; then there are:
as shown in fig. 4A, f1 ═ f; the first exposure exposes the sub-layer 21 in the photoresist 1, and the thickness of the sub-layer 21 is the DOF. Fig. 4A shows the case of H/2< DOF, and the case of H/2 ═ DOF is similar. The unexposed sublayer 22 on top of the sublayer 21 is the topmost sublayer, and the thickness of the sublayer 22 is H-DOF. f is the optimum focus measured in step 13 by taking the photoresist to be H/2 thick. The focal lengths are the focal lengths of the corresponding lens groups 104.
As shown in fig. 4B, f2 is f-DOF. As can be seen in fig. 4B, the sub-layer 22 is also within the DOF range of f2, so that a good exposure of the sub-layer 22 can be achieved.
And step four, developing the first photoresist.
The method of the first embodiment of the present invention is also applicable when H1 is H/2 and H1 is H/2, and H1 ≦ DOF.
According to the first embodiment of the invention, the optimal focal length and the focusing depth of exposure are measured in advance, then multiple exposure is carried out by combining the thickness of the photoresist on the basis of the optimal focal length and the focusing depth, so that the photoresist sublayers in the focusing depth range are processed once by exposure each time, and the multiple exposure is used for sequentially processing the sublayers of the longitudinally superposed photoresist and finally processing the photoresist in the whole thickness range.
The photoetching process method of the second embodiment of the invention comprises the following steps:
as shown in fig. 5A to 5C, they are schematic views of the photoresist structure in the exposure process of the photolithography process method according to the second embodiment of the present invention; the difference between the photolithography technique of the second embodiment of the present invention and the photolithography technique of the first embodiment of the present invention is that the photolithography technique of the second embodiment of the present invention has the following characteristics:
h ═ n dof and n >2, n exposures are taken in step three; let the focal length of the k-th exposure be fk, k being any integer between 1 and n; then there are:
fk＝f+H/2-k*DOF。
fig. 5A corresponds to a first exposure, which effects exposure of the sub-layer 21 in the photoresist 1, the thickness of the sub-layer 21 being the DOF. Since f is the best focus measured by the photoresist with the thickness of H/2 in step 13, the corresponding exposure area with the focus of f is shown by the dashed box 3, the bottom of f is located at the middle position of the dashed box 3, and the thicknesses of the dashed box 3 and the sublayer 21 are both DOF, so that f1 ═ f + H/2-DOF can be derived.
Fig. 5B corresponds to a second light exposure, which effects exposure of the sub-layer 22 in the photoresist 1, the thickness of the sub-layer 22 being the DOF. It can be seen that the focal length f2 is located in the middle of the sub-layer 22, and the focal length f1 is located in the position of the sub-layer 21, which are different in height DOF, so that f2 + H/2-2 DOF can be derived.
Fig. 5C corresponds to the nth exposure of the topmost sublayer 2n, and the difference in height between the focal length of the subsequent exposure and the focal length of the previous exposure is DOF, so that fn + H/2-n DOF can be obtained by successive derivation.
Preferably, n is equal to or greater than 6.
Finally, the photoresist 1 in the whole thickness range can be exposed in the depth of focus, and the defocusing can be prevented.
In the second embodiment of the present invention, H1 is H/2, and in other embodiments, H1 can have other values, where: when n-1DOF is more than or equal to nDOF and n is an integer more than 2, carrying out exposure for n times in the third step; let the focal length of the k-th exposure be fk, k being any integer between 1 and n; then there are:
fk＝f+H1-k*DOF。
the third embodiment of the invention has the following photoetching process:
the difference between the photolithography technique of the third embodiment of the present invention and the photolithography technique of the first embodiment of the present invention is that the photolithography technique of the third embodiment of the present invention has the following characteristics:
changing H in the step two to be less than or equal to DOF; at this time, one exposure is performed in step three, and the exposure employs f measured in step one. The third embodiment of the present invention has an advantage in that the photoresist 1 can be exposed at an optimum focus, thereby increasing a process window, compared to the prior art.
The present invention has been described in detail with reference to the specific embodiments, but these should not be construed as limitations of the present invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.
Claims (15)
1. A photolithography process, comprising the steps of:
step one, calculating the optimal focal length and the focusing depth of exposure in the photoetching process; let the optimal focal length be f and the depth of focus be DOF;
coating a first photoresist on a first wafer, wherein the thickness of the first photoresist is H, and H is larger than DOF;
thirdly, carrying out multiple exposures from the bottom of the first photoresist, wherein the exposure times are determined according to the size relationship between H and DOF, each exposure before the last exposure is used for respectively processing a sublayer with the DOF thickness in the first photoresist, the sublayers are sequentially overlapped from the bottom to the top of the first photoresist, the overlapping thickness of each sublayer is smaller than the thickness of the first photoresist, a residual topmost sublayer is formed at the top of the first photoresist, the thickness of the topmost sublayer is smaller than or equal to the DOF, and the last exposure is used for processing the topmost sublayer;
and step four, developing the first photoresist.
2. A lithographic process as in claim 1, wherein: the first step is realized by adopting the following sub-steps:
step 11, coating and coating a second photoresist on the second wafer, wherein the thickness of the second photoresist is H1, and H1 is smaller than H;
step 12, exposing and developing the second wafer in a manner of forming a focused energy matrix;
and step 13, measuring the focusing energy matrix and calculating the optimal focal length and the focusing depth according to the measurement result.
3. A lithographic process as in claim 2, wherein: h1 in step 11 is H/4-3H/4.
4. A lithographic process as in claim 3, wherein: h1 is H/2 in step 11.
5. A lithographic process as in claim 2, wherein: the exposure step in the manner of forming the focused energy matrix in step 12 is:
and during exposure, the energy change with fixed step length is carried out along the X direction of the second wafer, and the focus value change is carried out along the Y direction.
6. A lithographic process as in claim 5, wherein: in step 12, the step size of the energy change in the X direction is 0.1mj to 10 mj.
7. A lithographic process as in claim 5, wherein: in step 12, the step length of the change in the focus value in the Y direction is 10nm to 200 nm.
8. A lithographic process as in claim 2, wherein: the optimal focal length in step 13 is the focal length at which the line width is least sensitive to the change of the focus value.
9. A lithographic process as in claim 8, wherein: in step 13, the focusing depth is a focusing value variation range within a variation range of 5% -10% of the target value of the line width.
10. A lithographic process as in claim 4, wherein: when H is less than or equal to 2DOF, carrying out exposure twice in the third step; let the focal length of the first exposure be f1 and the focal length of the second exposure be f 2; then there are:
f1＝f；
f2＝f-DOF。
11. a lithographic process as in claim 4, wherein: when n-1DOF is more than or equal to nDOF and n is an integer more than 2, carrying out exposure for n times in the third step; let the focal length of the k-th exposure be fk, k being any integer between 1 and n; then there are:
fk＝f+H/2-k*DOF。
12. a lithographic process as in claim 2, wherein: when H1 is less than or equal to DOF, carrying out exposure twice in the third step; let the focal length of the first exposure be f1 and the focal length of the second exposure be f 2; then there are:
f1＝f；
f2＝f-DOF。
13. a lithographic process as in claim 2, wherein: when n-1DOF is more than or equal to nDOF and n is an integer more than 2, carrying out exposure for n times in the third step; let the focal length of the k-th exposure be fk, k being any integer between 1 and n; then there are:
fk＝f+H1-k*DOF。
14. the photolithography process method according to claim 11 or 13, wherein: n is 6 or more.
15. A lithographic process as in claim 1, wherein: changing H in the step two to be less than or equal to DOF; at this time, one exposure is performed in step three, and the exposure employs f measured in step one.
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Application publication date: 20191231 |
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