CN110624535A - Black bismuth tungstate photocatalyst as well as preparation method and application thereof - Google Patents
Black bismuth tungstate photocatalyst as well as preparation method and application thereof Download PDFInfo
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- 229910052797 bismuth Inorganic materials 0.000 title claims abstract description 75
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 title claims abstract description 75
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 239000011941 photocatalyst Substances 0.000 title claims abstract description 20
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 230000004888 barrier function Effects 0.000 claims abstract description 25
- 210000002381 plasma Anatomy 0.000 claims abstract description 19
- 230000001699 photocatalysis Effects 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000009832 plasma treatment Methods 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims abstract description 6
- 230000031700 light absorption Effects 0.000 claims abstract description 5
- 238000007146 photocatalysis Methods 0.000 claims abstract description 5
- 238000000926 separation method Methods 0.000 claims abstract description 4
- 208000028659 discharge Diseases 0.000 claims description 30
- 238000011282 treatment Methods 0.000 claims description 26
- 239000010453 quartz Substances 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 8
- 239000012495 reaction gas Substances 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 5
- 230000009467 reduction Effects 0.000 claims description 5
- 238000005303 weighing Methods 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 238000001132 ultrasonic dispersion Methods 0.000 claims description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- 239000011259 mixed solution Substances 0.000 description 6
- 238000006722 reduction reaction Methods 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 238000011221 initial treatment Methods 0.000 description 3
- 238000009210 therapy by ultrasound Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000005495 cold plasma Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 238000000985 reflectance spectrum Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002715 modification method Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000000527 sonication Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012029 structural testing Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
- B01J35/39—Photocatalytic properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/16—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
- B01J23/24—Chromium, molybdenum or tungsten
- B01J23/30—Tungsten
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/16—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
- B01J23/24—Chromium, molybdenum or tungsten
- B01J23/31—Chromium, molybdenum or tungsten combined with bismuth
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/34—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation
- B01J37/341—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation making use of electric or magnetic fields, wave energy or particle radiation
- B01J37/347—Ionic or cathodic spraying; Electric discharge
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/34—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation
- B01J37/349—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation making use of flames, plasmas or lasers
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/40—Carbon monoxide
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Abstract
The invention relates to a black bismuth tungstate photocatalyst, a preparation method and application thereof, belongs to the technical field of preparation methods of photocatalytic materials, and particularly relates to a method for preparing a black bismuth tungstate photocatalyst by photocatalysis of CO2And (4) reducing. According to the invention, dielectric barrier discharge is utilized to generate plasmas under different atmospheres, white bismuth tungstate is treated to obtain black bismuth tungstate photocatalyst, the bismuth elementary substance is reduced on the surface of the bismuth tungstate by the plasma treatment, the separation of photoproduction holes and electrons is promoted, the light absorption range is widened, and the photocatalysis CO is improved2Reducing power.
Description
Technical Field
The invention relates to a preparation method of a black bismuth tungstate photocatalyst, belongs to the technical field of preparation methods of photocatalytic materials, and particularly relates to a method for preparing a black bismuth tungstate photocatalyst by photocatalysis of CO2And (4) reducing.
Background
Bismuth tungstate (Bi)2WO6) As a photocatalyst with certain visible light response in organic pollutantsDegradation of dyestuffs and CO2The aspects of reduction and the like are widely researched and applied. But the traditional bismuth tungstate catalyst has high carrier recombination rate, so that the photocatalytic efficiency of the bismuth tungstate catalyst is influenced. Therefore, it is becoming more and more important to modify the traditional bismuth tungstate catalyst to improve the photocatalytic efficiency. The existing photocatalyst modification method mainly comprises appearance regulation, precious metal deposition, semiconductor compounding, defect regulation and the like. The surface modification of the photocatalyst by plasma has been developed in recent years to greatly improve the catalytic performance.
Plasma refers to a partially or completely ionized gas, and the sum of the positive and negative charges of free electrons and ions is completely cancelled out, and the plasma is macroscopically electrically neutral. It can be divided into high-temperature plasma (thermonuclear fusion plasma) and low-temperature plasma according to the temperature of the plasma. Low temperature plasmas also include thermal plasmas (plasma arcs, torches, etc.) and cold plasmas (low pressure ac/dc, radio frequency, microwave plasmas as well as high pressure dielectric barrier discharge, corona discharge, RF discharge, etc.). The low-temperature cold plasma has a large amount of active particles which can react with the surface of a contacted material, so that the active particles are used for modifying the surface of the material.
Dielectric Barrier Discharge (DBD) is a non-equilibrium gas discharge with an insulating dielectric inserted into a discharge space, which is also called dielectric barrier corona discharge or silent discharge. Dielectric barrier discharges are capable of operating at high gas pressures and over a wide frequency range, typically capable of generating plasma at atmospheric pressure, with power supply frequencies ranging from 50Hz to 1 mhz. The dielectric barrier discharge plasma treatment photocatalyst has the characteristics of mild treatment conditions, short reaction time, low energy consumption and the like.
Disclosure of Invention
The invention aims to overcome the defect of low utilization rate of visible light of the traditional bismuth tungstate photocatalytic material, utilizes dielectric barrier discharge to generate plasmas under different atmospheres, processes white bismuth tungstate to obtain a black bismuth tungstate photocatalyst, reduces a bismuth simple substance on the surface of the bismuth tungstate by the plasma treatment, promotes the separation of photoproduction holes and electrons, widens the light absorption range, and improves the photocatalysisTo convert CO2Reducing power.
In order to realize the purpose of the invention, the following technical scheme is mainly adopted:
a preparation method of a black bismuth tungstate photocatalyst comprises the following steps:
(1) weighing white bismuth tungstate and absolute ethyl alcohol, performing ultrasonic dispersion to form a uniform mixture, uniformly coating the mixture on a quartz plate, and then drying;
(2) placing the dried quartz plate with the white bismuth tungstate into a dielectric barrier discharge reactor, carrying out plasma discharge treatment at certain power and time, and introducing reaction gas at a constant speed in the treatment process;
(3) collecting the bismuth tungstate subjected to the first plasma treatment, performing ultrasonic dispersion again by using absolute ethyl alcohol to form a uniform mixture, uniformly coating the mixture on a quartz plate, and then drying;
(4) and (3) placing the completely dried quartz piece with the bismuth tungstate into a dielectric barrier discharge reactor for secondary treatment, introducing reaction gas at a constant speed in the treatment process, and finally obtaining the black bismuth tungstate photocatalytic material after the treatment is finished.
The preparation method comprises the following steps: in the step (1), the dosage of the white bismuth tungstate is 5-20 mg; the dosage of the absolute ethyl alcohol is 2-4 mL; the ultrasonic power is 100-150W, and the ultrasonic time is 5-10 min; the thickness of the quartz plate used was 0.5 mm.
The preparation method comprises the following steps: in the step (2), the dielectric barrier discharge power is 50-100W; the reaction gas is argon, ammonia or hydrogen, the treatment time is 1-5min, and the gas flow is 100-200 mL/min.
The preparation method comprises the following steps: in the step (3), the dosage of the absolute ethyl alcohol is 1-2 mL; the ultrasonic power is 50-100W, and the ultrasonic time is 3-5 min; the thickness of the quartz plate used was 0.5 mm.
The preparation method comprises the following steps: in the step (4), dielectric barrier discharge power, processing time and gas flow are changed, wherein the dielectric barrier discharge power is 100-; the reaction gas is argon, ammonia or hydrogen, the treatment time is 5-15min, and the gas flow is 200-300 mL/min.
The black bismuth tungstate photocatalytic material is prepared by the method.
The invention has the beneficial effects that:
the invention adopts the dielectric barrier discharge plasma processing method, has the characteristics of mild processing conditions, short reaction time, low energy consumption and environmental friendliness, is suitable for mass production and has certain application prospect.
The black bismuth tungstate photocatalyst prepared by the invention contains bismuth simple substance on the surface, promotes the separation of photoproduction holes and electrons, has higher visible light absorption and can be used for photocatalysis of CO2Has a certain application prospect in the reduction aspect.
Drawings
FIG. 1 is a color comparison graph of bismuth tungstate before and after plasma treatment in example 1.
FIG. 2 is an XRD spectrum of bismuth tungstate before and after plasma treatment in example 1.
FIG. 3 is a UV-VIS diffuse reflectance spectrum of bismuth tungstate before and after plasma treatment in example 1.
FIG. 4 is CO of bismuth tungstate before and after plasma treatment in example 12Reduction activity is compared with the figure.
Detailed Description
The invention is described in detail below with reference to specific embodiments, but the invention is not limited thereto
The experimental procedures used in the following examples are conventional unless otherwise specified.
Materials, reagents and the like used in the following examples are commercially available unless otherwise specified.
Example 1: weighing 10mg of white bismuth tungstate, adding the white bismuth tungstate into 2mL of absolute ethyl alcohol, and carrying out ultrasonic treatment with the ultrasonic power of 150W and the ultrasonic time of 8 min. Then, the mixed solution is uniformly coated on a quartz plate with the thickness of 0.5mm, after the quartz plate is completely dried, the quartz plate is placed into a dielectric barrier reactor for primary treatment, 150mL/min of hydrogen is introduced into the reactor at a constant speed, the discharge power is 80W, and the treatment time is 5 min. And (3) re-collecting the treated bismuth tungstate, re-ultrasonically dispersing the bismuth tungstate by using 2mL of absolute ethyl alcohol, wherein the ultrasonic power is 100W, the ultrasonic time is 5min, and uniformly coating the mixed solution on a quartz chip. And (3) putting the completely dried quartz plate into a dielectric barrier reactor for secondary treatment, and introducing 300mL/min hydrogen into the reactor at a constant speed, wherein the discharge power is 120W, and the treatment time is 10min, so as to obtain the black bismuth tungstate.
Example 2: weighing 5mg of white bismuth tungstate, adding the white bismuth tungstate into 2mL of absolute ethyl alcohol, and carrying out ultrasonic treatment with the ultrasonic power of 100W and the ultrasonic time of 5 min. And then, uniformly coating the mixed solution on a quartz plate with the thickness of 0.5mm, completely drying, and then putting the quartz plate into a dielectric barrier reactor for primary treatment, wherein 100mL/min of argon is introduced into the reactor at a constant speed, the discharge power is 50W, and the treatment time is 3 min. And (3) re-collecting the treated bismuth tungstate, re-ultrasonically dispersing the bismuth tungstate by using 2mL of absolute ethyl alcohol, wherein the ultrasonic power is 50W, the ultrasonic time is 3min, and uniformly coating the mixed solution on a quartz chip. And (3) putting the completely dried quartz plate into a dielectric barrier reactor for secondary treatment, and introducing 300mL/min argon gas into the reactor at a constant speed, wherein the discharge power is 100W, and the treatment time is 5min, so as to obtain the black bismuth tungstate.
Example 3: weighing 20mg of white bismuth tungstate, adding the white bismuth tungstate into 4mL of absolute ethyl alcohol, and carrying out ultrasonic treatment with the ultrasonic power of 150W and the ultrasonic time of 10 min. And then, uniformly coating the mixed solution on a quartz plate with the thickness of 0.5mm, completely drying, and then putting the quartz plate into a dielectric barrier reactor for primary treatment, wherein ammonia gas of 200mL/min is introduced into the reactor at a constant speed, the discharge power is 100W, and the treatment time is 5 min. And (3) re-collecting the treated bismuth tungstate, re-ultrasonically dispersing the bismuth tungstate by using 2mL of absolute ethyl alcohol, wherein the ultrasonic power is 100W, the ultrasonic time is 5min, and uniformly coating the mixed solution on a quartz chip. And (3) putting the completely dried quartz plate into a dielectric barrier reactor for secondary treatment, introducing 300mL/min ammonia gas into the reactor at a constant speed, discharging at the power of 150W, and treating for 15min to obtain black bismuth tungstate.
FIG. 1 is a comparison of the color of white bismuth tungstate and black bismuth tungstate before and after plasma treatment in example 1, and it can be seen that the color of bismuth tungstate changed from white to black after the treatment.
The structural testing of the prepared samples was conducted in Bruke, GermanyType r D8 radiation diffractometer (XRD) was performed (Cu-ka radiation,in the range of 10-80 deg., and a scanning rate of 7 deg. min-1. As shown in fig. 2, in example 1, compared with the white bismuth tungstate, the black bismuth tungstate before and after the treatment showed peaks corresponding to the bismuth tungstate, which are pointed to the peak of the bismuth simple substance, indicating that the bismuth simple substance is reduced by the plasma treatment.
FIG. 3 shows the UV-VIS diffuse reflectance spectra of white and black bismuth tungstates before and after plasma treatment in example 1, which shows that the light absorption range of black bismuth tungstate is significantly expanded.
Example 4: 10mg of the catalyst prepared in example 1 are weighed out and dissolved in the prepared solution by sonication for 10 minutes (6mL acetonitrile, 4mL H)2O, 2mL TEOA), the reaction was carried out under irradiation with a 300W xenon lamp (PLS-SXE 300C (BF), Perfectlight) at a temperature of 10 ℃ and a pressure of 0.75 MPa. Gas product analysis was performed using a GC-2002 gas chromatography system and a thermal conductivity detector manufactured by Shanghai scientific instruments, Inc.
Photocatalytic activity test: photocatalytic CO model Labsolar-6A manufactured by PerfectLight corporation2Photocatalytic CO for synthesizing sample in reduction reaction instrument2And (5) testing the reduction performance. FIG. 4 shows photocatalytic CO2The contrast graph of the rate of CO generated by reduction shows that the performance of the prepared black bismuth tungstate is greatly improved compared with untreated white bismuth tungstate.
The above disclosure is only a preferred embodiment of the present invention, and the present invention shall be covered by the protection scope of the present invention by the replacement and modification according to the ordinary skill and conventional means in the art without departing from the concept of the method of the present invention.
Claims (5)
1. A preparation method of black bismuth tungstate photocatalyst is characterized in that medium barrier discharge is utilized to generate plasmas under different atmospheres, white bismuth tungstate is treated to obtain black tungstenThe bismuth tungstate photocatalyst is treated by plasma to reduce bismuth simple substance on the surface of the bismuth tungstate, promote the separation of photoproduction holes and electrons, widen the light absorption range and improve the photocatalysis CO2The reduction capacity comprises the following specific steps:
(1) weighing white bismuth tungstate and absolute ethyl alcohol, performing ultrasonic dispersion to form a uniform mixture, uniformly coating the mixture on a quartz plate, and then drying;
(2) placing the dried quartz plate with the white bismuth tungstate into a dielectric barrier discharge reactor, carrying out plasma discharge treatment at certain power and time, and introducing reaction gas at a constant speed in the treatment process;
(3) collecting the bismuth tungstate subjected to the first plasma treatment, performing ultrasonic dispersion again by using absolute ethyl alcohol to form a uniform mixture, uniformly coating the mixture on a quartz plate, and then drying;
(4) and (3) placing the completely dried quartz piece with the bismuth tungstate into a dielectric barrier discharge reactor for secondary treatment, introducing reaction gas at a constant speed in the treatment process, and finally obtaining the black bismuth tungstate photocatalytic material after the treatment is finished.
2. The method for preparing a black bismuth tungstate photocatalyst as claimed in claim 1, wherein in the step (1), the amount of the white bismuth tungstate is 5-20 mg; the dosage of the absolute ethyl alcohol is 2-4 mL; the ultrasonic power is 100-150W, and the ultrasonic time is 5-10 min; the thickness of the quartz plate used was 0.5 mm.
3. The method for preparing a black bismuth tungstate photocatalyst as claimed in claim 1, wherein in the step (2), the dielectric barrier discharge power is 50-100W; the reaction gas is argon, ammonia or hydrogen, the treatment time is 1-5min, and the gas flow is 100-200 mL/min.
4. The method for preparing a black bismuth tungstate photocatalyst as claimed in claim 1, wherein in the step (3), the amount of the absolute ethyl alcohol is 1-2 mL; the ultrasonic power is 50-100W, and the ultrasonic time is 3-5 min; the thickness of the quartz plate used was 0.5 mm.
5. The method for preparing a black bismuth tungstate photocatalyst as claimed in claim 1, wherein in the step (4), the dielectric barrier discharge power, the treatment time and the gas flow rate are changed, and the dielectric barrier discharge power is 100-150W; the reaction gas is argon, ammonia or hydrogen, the treatment time is 5-15min, and the gas flow is 200-300 mL/min.
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| PCT/CN2020/114816 WO2021052257A1 (en) | 2019-09-17 | 2020-09-11 | Black bismuth tungstate photocatalyst, preparation method, and application |
| GB2105335.0A GB2592516A (en) | 2019-09-17 | 2020-09-11 | Black bismuth tungstate photocatalyst, preparation method, and application |
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| CN111905715A (en) * | 2020-06-22 | 2020-11-10 | 江苏中江材料技术研究院有限公司 | Plasma-induced Bi2MoO6Method for preparing photocatalyst |
| WO2021052257A1 (en) * | 2019-09-17 | 2021-03-25 | 江苏大学 | Black bismuth tungstate photocatalyst, preparation method, and application |
| CN113117522A (en) * | 2021-05-28 | 2021-07-16 | 陕西科技大学 | CO reduction for improving Bi plasma photocatalyst2Method of activity |
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| CN114132964A (en) * | 2022-02-07 | 2022-03-04 | 材料科学姑苏实验室 | Preparation method of amorphous black bismuth tungstate, amorphous black bismuth tungstate and application thereof |
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| CN115323477A (en) * | 2022-08-10 | 2022-11-11 | 深圳大学 | Bismuth tungstate monocrystal and preparation method thereof |
| CN115414929B (en) * | 2022-08-18 | 2024-01-19 | 电子科技大学长三角研究院(湖州) | Heterojunction semiconductor photocatalyst, preparation method and application thereof |
| CN115364873A (en) * | 2022-08-22 | 2022-11-22 | 电子科技大学长三角研究院(湖州) | Hollow tubular ultrathin photocatalyst and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050032626A1 (en) * | 2003-05-16 | 2005-02-10 | Korea Institute Of Science And Technology | Reduction method of catalysts using non-thermal plasma |
| CN104039450A (en) * | 2011-12-08 | 2014-09-10 | 新加坡国立大学 | Photocatalytic metal oxide nanomaterials, preparing method utilizing H2-plasma, and use for purification of organic waste in water |
| CN104874811A (en) * | 2015-05-22 | 2015-09-02 | 武汉工程大学 | Preparing method of simple substance bismuth/bismuth compound nanocomposite with oxygen vacancies |
| US20160376716A1 (en) * | 2015-06-29 | 2016-12-29 | Korea Advanced Institute Of Science And Technology | Method for improving solar energy conversion efficiency of semiconductor metal oxide photocatalysis using h2/n2 mixed gas plasma treatment |
| CN106964339A (en) * | 2017-04-14 | 2017-07-21 | 武汉理工大学 | Ultra-thin Bismuth tungstate nano-sheet catalysis material of carbon doping and preparation method thereof |
| CN107497413A (en) * | 2017-07-27 | 2017-12-22 | 东华大学 | A kind of preparation method of black titanium dioxide coating |
| CN109704398A (en) * | 2019-03-01 | 2019-05-03 | 洛阳师范学院 | A kind of normal pressure cold plasma preparation method of grey low-valence titanium oxide powder material |
| CN109847732A (en) * | 2018-11-21 | 2019-06-07 | 电子科技大学 | A kind of method and application preparing titanium dioxide nanoplate based on corona treatment |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9630162B1 (en) * | 2007-10-09 | 2017-04-25 | University Of Louisville Research Foundation, Inc. | Reactor and method for production of nanostructures |
| CN106807361B (en) * | 2017-02-28 | 2019-02-15 | 重庆工商大学 | A kind of unformed bismuth tungstate of bismuth-- bismuth oxide ternary organic composite photochemical catalyst and preparation method |
| CN106890565B (en) * | 2017-03-28 | 2020-03-13 | 广西大学 | Method for converting carbon dioxide |
| CN109569684B (en) * | 2018-11-09 | 2021-10-08 | 浙江工商大学 | Plasma modified metal oxide and g-carbon nitride co-modified titanium dioxide nanorod composite photocatalyst as well as preparation method and application thereof |
| CN110624535A (en) * | 2019-09-17 | 2019-12-31 | 江苏大学 | Black bismuth tungstate photocatalyst as well as preparation method and application thereof |
-
2019
- 2019-09-17 CN CN201910876678.9A patent/CN110624535A/en active Pending
-
2020
- 2020-09-11 GB GB2105335.0A patent/GB2592516A/en active Pending
- 2020-09-11 WO PCT/CN2020/114816 patent/WO2021052257A1/en active Application Filing
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050032626A1 (en) * | 2003-05-16 | 2005-02-10 | Korea Institute Of Science And Technology | Reduction method of catalysts using non-thermal plasma |
| CN104039450A (en) * | 2011-12-08 | 2014-09-10 | 新加坡国立大学 | Photocatalytic metal oxide nanomaterials, preparing method utilizing H2-plasma, and use for purification of organic waste in water |
| CN104874811A (en) * | 2015-05-22 | 2015-09-02 | 武汉工程大学 | Preparing method of simple substance bismuth/bismuth compound nanocomposite with oxygen vacancies |
| US20160376716A1 (en) * | 2015-06-29 | 2016-12-29 | Korea Advanced Institute Of Science And Technology | Method for improving solar energy conversion efficiency of semiconductor metal oxide photocatalysis using h2/n2 mixed gas plasma treatment |
| CN106964339A (en) * | 2017-04-14 | 2017-07-21 | 武汉理工大学 | Ultra-thin Bismuth tungstate nano-sheet catalysis material of carbon doping and preparation method thereof |
| CN107497413A (en) * | 2017-07-27 | 2017-12-22 | 东华大学 | A kind of preparation method of black titanium dioxide coating |
| CN109847732A (en) * | 2018-11-21 | 2019-06-07 | 电子科技大学 | A kind of method and application preparing titanium dioxide nanoplate based on corona treatment |
| CN109704398A (en) * | 2019-03-01 | 2019-05-03 | 洛阳师范学院 | A kind of normal pressure cold plasma preparation method of grey low-valence titanium oxide powder material |
Non-Patent Citations (2)
| Title |
|---|
| BEIBEI LI等: "Highly Efficient Low-Temperature Plasma-Assisted Modification of TiO2 Nanosheets with Exposed {001} Facets for Enhanced Visible-Light Photocatalytic Activity", 《CHEM. EUR. J.》 * |
| JINGUO WANG等: "Bi2WO6-x nanosheets with tunable Bi quantum dots and oxygen vacancies for photocatalytic selective oxidation of alcohols", 《APPLIED CATALYSIS B: ENVIRONMENTAL》 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021052257A1 (en) * | 2019-09-17 | 2021-03-25 | 江苏大学 | Black bismuth tungstate photocatalyst, preparation method, and application |
| CN111905715A (en) * | 2020-06-22 | 2020-11-10 | 江苏中江材料技术研究院有限公司 | Plasma-induced Bi2MoO6Method for preparing photocatalyst |
| CN113117522A (en) * | 2021-05-28 | 2021-07-16 | 陕西科技大学 | CO reduction for improving Bi plasma photocatalyst2Method of activity |
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| CN114132964A (en) * | 2022-02-07 | 2022-03-04 | 材料科学姑苏实验室 | Preparation method of amorphous black bismuth tungstate, amorphous black bismuth tungstate and application thereof |
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| CN115504469A (en) * | 2022-09-23 | 2022-12-23 | 重庆邮电大学 | System and method for converting carbon dioxide by using water-assisted plasma and photocatalyst in cooperation manner |
| CN115504469B (en) * | 2022-09-23 | 2024-02-27 | 重庆邮电大学 | System and method for cooperatively converting carbon dioxide by water-assisted plasma and photocatalyst |
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| WO2021052257A1 (en) | 2021-03-25 |
| GB202105335D0 (en) | 2021-05-26 |
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