CN110618555B

CN110618555B - Display substrate, manufacturing method thereof and display device

Info

Publication number: CN110618555B
Application number: CN201910918458.8A
Authority: CN
Inventors: 靳倩; 黄维; 韩影
Original assignee: BOE Technology Group Co Ltd
Current assignee: BOE Technology Group Co Ltd
Priority date: 2019-09-26
Filing date: 2019-09-26
Publication date: 2022-07-29
Anticipated expiration: 2039-09-26
Also published as: CN110618555A

Abstract

The application discloses a display substrate, a manufacturing method thereof and a display device, and belongs to the technical field of display. The display substrate comprises a substrate base plate, a black matrix graph and a quantum dot layer which are positioned on the substrate base plate, and a first filter layer which is positioned on one side of the substrate base plate far away from the black matrix graph, wherein the black matrix graph comprises a plurality of pixel regions limited by retaining wall structures, the quantum dot layer comprises quantum dot structures with at least two different colors, the first filter layer comprises first filter structures with at least two different colors, the first filter structures are positioned on the retaining wall structures, one surface, far away from the substrate base plate, of each first filter structure protrudes out of one surface, far away from the substrate base plate, of each quantum dot structure, and the first filter structures positioned on the retaining wall structures on two sides of each quantum dot structure comprise filter structures with different colors from the quantum dot structures. The display substrate is beneficial to avoiding color mixing of the display substrate.

Description

Display substrate, manufacturing method thereof and display device

Technical Field

The present disclosure relates to the field of display technologies, and in particular, to a display substrate, a manufacturing method thereof, and a display device.

Background

With the continuous development of display technologies, display devices can realize wider color gamut display. Quantum Dot (QD) display devices have the characteristics of narrow spectrum, high color purity, wide color gamut and the like, and have unique advantages in the field of wide-color-gamut display.

The QD display device generally includes a backlight source and a QD display panel, a display substrate of the QD display panel includes a substrate, and a black matrix pattern and a QD light emitting layer disposed on the substrate, the QD light emitting layer includes a red QD structure, a green QD structure, and a blue QD structure, the QD structure is located in a pixel region defined by the black matrix pattern, and the QD structure protrudes from the black matrix pattern. Light emitted by the backlight source excites the red QD structure to emit red light when passing through the red QD structure, excites the green QD structure to emit green light when passing through the green QD structure, and excites the blue QD structure to emit blue light when passing through the blue QD structure.

However, since the QD structure protrudes from the black matrix pattern, light emitted from the QD structure in each pixel region can be irradiated to an adjacent pixel region from above the black matrix pattern, resulting in color mixing of the display substrate.

Disclosure of Invention

The application provides a display substrate, a manufacturing method thereof and a display device. The technical scheme is as follows:

in a first aspect, a display substrate is provided, which includes:

the quantum dot array substrate comprises a substrate base plate, a black matrix pattern and a quantum dot layer which are positioned on the substrate base plate, and a first filter layer which is positioned on one side of the black matrix pattern far away from the substrate base plate;

The black matrix pattern comprises a plurality of pixel regions defined by retaining wall structures, the quantum dot layer comprises quantum dot structures of at least two different colors, and the quantum dot structures are positioned in the pixel regions;

the first filter layer comprises at least two first filter structures with different colors, the first filter structures are located on the retaining wall structures, one surface of the substrate base plate protrudes out of one surface of the quantum dot structure away from the substrate base plate, and the first filter structures are located on the retaining wall structures on two sides of the quantum dot structure and comprise filter structures with different colors of the quantum dot structure.

Optionally, the first filter structures on the retaining wall structures on two sides of each quantum dot structure further include filter structures with the same color as the quantum dot structures.

Optionally, the retaining wall structures on two sides of each quantum dot structure include two different colors of the first filter structures, and in the two different colors of the first filter structures, the color of the first filter structure far away from the quantum dot structure is the same as the color of the quantum dot structure; alternatively, the first and second electrodes may be,

Every the retaining wall structure of quantum dot structure both sides includes two kinds of different colours first light filtering structure, in two kinds of different colours first light filtering structure, be close to the quantum dot structure the colour of first light filtering structure with the colour of quantum dot structure is the same.

Optionally, the first filter structures of two different colors on each of the retaining wall structures are symmetrical with respect to the first axial section of the retaining wall structure.

Optionally, the width w of the first filtering structure ranges from: w is more than or equal to 1 micrometer and less than or equal to L/4, wherein L is the minimum width of the retaining wall structure where the first light filtering structure is located;

the range of the thickness d of the first filtering structure is as follows: d is more than or equal to 2 microns.

Optionally, the display substrate further comprises:

a second filter layer between the substrate and the quantum dot layer, the second filter layer including second filter structures of at least two different colors, the second filter structures being located within the pixel regions, and in each of the pixel regions, the color of the second filter structures being the same as the color of the quantum dot structures.

Optionally, the quantum dot layer comprises a red quantum dot structure, a green quantum dot structure, and a blue quantum dot structure;

The first filter layer and the second filter layer both comprise a red filter structure, a green filter structure and a blue filter structure.

In a second aspect, a method for manufacturing a display substrate is provided, the method comprising:

forming a black matrix pattern on a substrate, wherein the black matrix pattern comprises a plurality of pixel regions defined by retaining wall structures;

forming a quantum dot layer and a first filter layer on the substrate base plate with the black matrix pattern, wherein the quantum dot layer comprises quantum dot structures with at least two different colors, the quantum dot structures are positioned in the pixel region, the first filter layer comprises first filter structures with at least two different colors, and the first filter structures are positioned on the retaining wall structures;

one surface, far away from the substrate base plate, of the first filtering structure protrudes out of one surface, far away from the substrate base plate, of the quantum dot structure, and the first filtering structures, located on the retaining wall structures on two sides of each quantum dot structure, of the first filtering structures comprise filtering structures with different colors from those of the quantum dot structures.

Optionally, the forming a quantum dot layer and a first filter layer on the substrate on which the black matrix pattern is formed includes:

Forming the first filter layer on the substrate with the black matrix pattern;

and forming the quantum dot layer on the substrate on which the first filter layer is formed.

Optionally, after the first filter layer is formed on the base substrate on which the black matrix pattern is formed, the method further includes: carrying out liquid-repellent treatment on one surface of the first filter layer, which is far away from the substrate base plate;

the forming of the quantum dot layer on the substrate on which the first filter layer is formed includes: and forming the quantum dot layer on the substrate on which the first filter layer is formed by an ink-jet printing process.

Optionally, the lyophobic treatment on the side, away from the substrate, of the first filter layer includes:

and carrying out plasma treatment on one surface, far away from the substrate base plate, of the first filter layer by adopting preset plasma.

Optionally, the predetermined plasma includes at least one of carbon fluoride or sulfur fluoride.

Optionally, after forming the black matrix pattern on the substrate base plate, the method further includes:

forming a second filter layer on the substrate with the black matrix pattern, wherein the second filter layer comprises second filter structures with at least two different colors, and the second filter structures are positioned in the pixel area;

The forming of the quantum dot layer on the substrate on which the first filter layer is formed includes:

forming the quantum dot layer on the substrate on which the second filter layer is formed, the quantum dot structure having a color identical to that of the second filter structure in each of the pixel regions.

Optionally, the second optical filter layer is prepared by the same process as the first optical filter layer.

In a third aspect, a display device is provided, which includes the display substrate of any one of the first aspect.

The beneficial effect that technical scheme that this application provided brought is:

in the display substrate, the black matrix pattern includes a plurality of pixel regions defined by retaining wall structures, the quantum dot layer includes quantum dot structures of at least two different colors, the first filter layer includes first filter structures of at least two different colors, the quantum dot structures are located in the pixel regions, the first filter structures are located on the retaining wall structures, one side of the first filter structures, which is far away from the substrate, protrudes out of one side of the quantum dot structures, which is far away from the substrate, the first filter structures located on the retaining wall structures on two sides of each quantum dot structure include filter structures of different colors from the quantum dot structures, so that the first filter structures located on the retaining wall structures on two sides of each quantum dot structure can filter the lateral light emitted by the quantum dot structure, which helps to prevent the lateral light emitted by the quantum dot structure from irradiating adjacent pixel regions, thereby avoiding color mixing of the display substrate.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a display substrate provided in the related art;

fig. 2 is a schematic structural diagram of a display substrate according to an embodiment of the present disclosure;

FIG. 3 is an enlarged view of a portion of a display substrate according to an embodiment of the present disclosure;

fig. 4 is a schematic structural diagram of another display substrate provided in this embodiment of the present application;

FIG. 5 is a spectrum diagram of lateral light emitted from a pixel region in which a quantum dot structure is provided according to the related art;

fig. 6 is a light transmission spectrum of a first optical filter layer according to an embodiment of the present disclosure;

FIG. 7 is a graph of a spectral comparison of lateral light emitted from a pixel region having a red quantum dot structure;

FIG. 8 is a graph of a spectral comparison of lateral light emitted from a pixel region with an alternative red quantum dot structure;

FIG. 9 is a graph of a spectral comparison of lateral light emitted from a pixel region having a green quantum dot structure;

FIG. 10 is a graph of a spectral comparison of lateral light emitted from a pixel region with an alternative green quantum dot structure;

FIG. 11 is a flowchart illustrating a method of fabricating a display substrate according to an embodiment of the present disclosure;

FIG. 12 is a flowchart illustrating a method of fabricating another display substrate according to an embodiment of the present disclosure;

fig. 13 is a schematic diagram illustrating a black matrix pattern formed on a substrate according to an embodiment of the present disclosure;

fig. 14 is a schematic diagram illustrating a red color filter structure formed on a substrate with a black matrix pattern according to an embodiment of the present disclosure;

fig. 15 is a schematic diagram illustrating a green filter structure formed on a substrate with a red filter structure formed thereon according to an embodiment of the present disclosure;

fig. 16 is a schematic diagram illustrating a blue color filter structure formed on a substrate with a green color filter structure formed thereon according to an embodiment of the present disclosure;

fig. 17 is a schematic diagram illustrating a red quantum dot structure formed on a substrate on which a first filter layer is formed according to an embodiment of the present disclosure;

Fig. 18 is a schematic diagram illustrating a green quantum dot structure formed on a substrate base plate on which a red quantum dot structure is formed according to an embodiment of the present application;

FIG. 19 is a flowchart illustrating a method of fabricating a display substrate according to an embodiment of the present disclosure;

fig. 20 is a schematic diagram illustrating a red color filter structure formed on a substrate with a black matrix pattern according to an embodiment of the present disclosure;

fig. 21 is a schematic diagram illustrating a green filter structure formed on a substrate with a red filter structure formed thereon according to an embodiment of the present disclosure;

fig. 22 is a schematic diagram illustrating a substrate with a green filter structure formed thereon after a blue filter structure is formed thereon according to an embodiment of the present disclosure;

fig. 23 is a schematic diagram illustrating a red quantum dot structure formed on a substrate on which a second filter layer is formed according to an embodiment of the present disclosure;

fig. 24 is a schematic diagram of a green quantum dot structure formed on a substrate on which a red quantum dot structure is formed according to an embodiment of the present application.

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and together with the description, serve to explain the principles of the application.

Detailed Description

To make the principles, technical solutions and advantages of the present application clearer, the present application will be described in further detail with reference to the accompanying drawings, and it should be understood that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making any creative effort belong to the protection scope of the present application.

Referring to fig. 1, which shows a schematic structural diagram of a display substrate 00 according to the related art, referring to fig. 1, the display substrate 00 includes a substrate 001, and a black matrix pattern 002 and a quantum dot layer 003 which are disposed on the substrate 001, the black matrix pattern 002 includes a plurality of pixel regions (not labeled in fig. 1) defined by barrier structures 0021, the quantum dot layer 003 includes a red quantum dot structure 0031, a green quantum dot structure 0032 and a blue quantum dot structure 0033, each of the quantum dot structures is disposed in one of the pixel regions and scattering particles 003a are dispersed in each of the quantum dot structures, each of the red quantum dot structure 0031, the green quantum dot structure 0032 and the blue quantum dot structure 0033 can emit light of a corresponding color by absorbing excitation light irradiated to the quantum dot structure (for example, the red quantum dot structure 0031 can emit red light by absorbing excitation light irradiated to the red quantum dot structure 0031), the scattering particles 003a in each quantum dot structure can scatter light in the pixel region where the quantum dot structure is located, so that the light in the pixel region where the quantum dot structure is located is emitted from different directions.

Under the influence of the performance of the quantum dot material, the quantum dot structure cannot completely absorb the excitation light irradiated to the quantum dot structure, and the excitation light can be absorbed by the quantum dot structure as much as possible by increasing the thickness of the quantum dot structure, so that the luminous efficiency of the quantum dot structure is improved. The main factor restricting the thickness of the quantum dot structure in the prior art is the thickness of the retaining wall structure 0021, at present, influenced by the material and the manufacturing process of the retaining wall structure, the maximum thickness of the retaining wall structure 0021 is 6 micrometers to 7 micrometers, under an ideal condition, the maximum thickness of the quantum dot structure is the same as the maximum thickness of the retaining wall structure 0021, however, the quantum dot structure is usually formed by an ink-jet printing process, in the actual printing process, influenced by the retaining wall structure 0021, as shown in fig. 1, the appearance after the film formation of the quantum dot structure is mostly thick in the middle and thin on both sides, one side of the quantum dot structure far away from the substrate 001 protrudes from one side of the black matrix pattern 003 far away from the substrate 001, the thickness section difference between the quantum dot structure and the retaining wall structure 0021 can reach 1 micrometer to 2 micrometers, the thickness section difference is about 15 percent to 20 percent (percentage) of the thickness of the retaining wall structure 0021, under the action of the scattering particles 003a, light in the pixel region where each quantum dot structure is located may be irradiated from above the black matrix pattern 002 to the adjacent pixel region, resulting in color mixing of the display substrate.

Referring to fig. 2, a schematic structural diagram of a display substrate 01 according to an embodiment of the present disclosure is shown. Referring to fig. 2, the display substrate 01 includes: a substrate 011, a black matrix pattern 012 and a quantum dot layer 013 on the substrate 011, and a first filter layer 014 on a side of the black matrix pattern 012 away from the substrate 011.

The black matrix pattern 012 includes a plurality of pixel regions (not shown in fig. 2) defined by the retaining wall structures 0121, and the quantum dot layer 013 includes quantum dot structures of at least two different colors, and the quantum dot structures are located in the pixel regions. The first filter layer 014 includes at least two first filter structures with different colors, the first filter structure is located on the retaining wall structure 0121, one side of the first filter structure 0121 far away from the substrate 011 protrudes out of one side of the quantum dot structure far away from the substrate 011, and the first filter structures located on the retaining wall structures 0121 at two sides of each quantum dot structure include the first filter structure with different colors from the quantum dot structure. In the embodiment of the present application, the color of the filter structure refers to the color of light allowed to pass through by the filter structure, and the color of the quantum dot structure refers to the color of light capable of being emitted by the quantum dot structure.

For example, fig. 2 illustrates that the at least two quantum dot structures of different colors include a red quantum dot structure 0131, a green quantum dot structure 0132 and a blue quantum dot structure 0133, the at least two first filter structures of different colors include a red filter structure 0141, a green filter structure 0142 and a blue filter structure 0143, as shown in fig. 2, the red quantum dot structure 0131, the green quantum dot structure 0132 and the blue quantum dot structure 0133 are located in different pixel regions, the red filter structure 0141, the green filter structure 0142 and the blue filter structure 0143 are all located on the retaining wall structure 0121, a surface of each of the red filter structure 0141, the green filter structure 0142 and the blue filter structure 0143 away from the substrate 011 protrudes from a surface of the substrate other than a surface of any one of the red quantum dot structure 0131, the green quantum dot structure 0132 and the blue quantum dot structure 0133 away from the substrate 011, the first filter structures on the retaining wall structures 0121 on two sides of the red quantum dot structure 0131 include first filter structures with different colors from the red quantum dot structure 0131, that is, the retaining wall structures 0121 on two sides of the red quantum dot structure 0131 include green filter structures 0142 and/or blue filter structures 0143, the first filter structures on the retaining wall structures 0121 on two sides of the green quantum dot structure 0132 include first filter structures with different colors from the green quantum dot structure 0132, that is, the retaining wall structures 0121 on two sides of the green quantum dot structure 0132 include red filter structures 0141 and/or blue filter structures 0143, the first filter structures on the retaining wall structures 0121 on two sides of the blue quantum dot structure 0133 include first filter structures with different colors from the blue quantum dot structure 0133, that is, the retaining wall structures 0121 on two sides of the blue quantum dot structure 0133 include green filter structures 0142 and/or blue filter structures 0143.

Each quantum dot structure is configured to emit colored light of a specified color under the action of excitation light rays incident on the quantum dot structure, the specified color is the same as the color of the quantum dot structure, each first filtering structure is configured to filter the light rays incident on the first filtering structure, and the first filtering structure allows the light rays with the same color as the first filtering structure to pass through the first filtering structure. As an example. The red quantum dot structure 0131 is configured to emit red light rays under the action of excitation light rays incident on the red quantum dot structure 0131, the green quantum dot structure 0132 is configured to emit green light rays under the action of excitation light rays incident on the green quantum dot structure 0132, and the blue quantum dot structure 0133 is configured to emit blue light rays under the action of excitation light rays incident on the blue quantum dot structure 0133; the red filter structures 0141 are configured to filter non-red light rays that enter the red filter structures 0141, the green filter structures 0142 are configured to filter non-green light rays that enter the green filter structures 0142, and the blue filter structures 0143 are configured to filter non-blue light rays that enter the blue filter structures 0143. It should be understood that, in the embodiment of the present application, the first filtering structures on the retaining wall structures 0121 on two sides of each quantum dot structure include first filtering structures with different colors from the quantum dot structure, and the first filtering structures with different colors from the quantum dot structure can filter the lateral light emitted by the quantum dot structure, so as to prevent the lateral light emitted by the quantum dot structure from irradiating on the adjacent pixel regions of the pixel region where the quantum dot structure is located, thereby helping to prevent the display substrate 01 from color mixing. The lateral light emitted by the quantum dot structure refers to the direction of the side face of the quantum dot structure, and the side face of the quantum dot structure is intersected with the plate surface of the substrate.

In summary, in the display substrate provided in the embodiment of the present application, the black matrix pattern includes a plurality of pixel regions defined by the retaining wall structures, the quantum dot layer includes quantum dot structures with at least two different colors, the first filter layer includes first filter structures with at least two different colors, the quantum dot structures are located in the pixel regions, the first filter structures are located on the retaining wall structures, one surface of the first filter structure, which is away from the substrate, protrudes out of one surface of the quantum dot structure, which is away from the substrate, the first filter structures located on the retaining wall structures on two sides of each quantum dot structure include filter structures with a color different from that of the quantum dot structure, so that the first filter structures located on the retaining wall structures on two sides of each quantum dot structure can filter the lateral light emitted by the quantum dot structure, which helps to prevent the lateral light emitted by the quantum dot structure from irradiating the adjacent pixel regions, thereby avoiding color mixing of the display substrate.

Optionally, the first filter structures on the retaining wall structures 0121 on two sides of each quantum dot structure further include a filter structure with the same color as that of each quantum dot structure. With reference to fig. 2, the first light filtering structures on the retaining wall structures 0121 on two sides of the red quantum dot structure 0131 further include a red light filtering structure 0141, the first light filtering structures on the retaining wall structures 0121 on two sides of the green quantum dot structure 0132 further include a green light filtering structure 0142, and the first light filtering structures on the retaining wall structures 0121 on two sides of the blue quantum dot structure 0133 further include a blue light filtering structure 0143. It is easy to understand that in the embodiment of the present application, each pixel region where each quantum dot structure is located may include light rays with two different colors, the retaining wall structures 0121 on two sides of each quantum dot structure may include first filter structures with at least two different colors, and the first filter structures with at least two different colors on the retaining wall structures 0121 on two sides of each quantum dot structure may filter the light rays with two different colors in the pixel region where each quantum dot structure is located, which is helpful for preventing the display substrate 01 from color mixing.

Optionally, in this embodiment of the application, the retaining wall structures 0121 on two sides of each quantum dot structure include two different color first filter structures, and the two different color first filter structures are symmetrical with respect to the first axis cross section of the retaining wall structure 0121. That is, the first filter structures of two different colors on each of the retaining wall structures 0121 are symmetrical with respect to the first axial section of the retaining wall structure 0121. The cross section of the retaining wall structure 0121 perpendicular to the substrate base plate 011 may include a trapezoid, and the first axial cross section of the retaining wall structure 0121 may be perpendicular to the substrate base plate 011 and perpendicular to the bottom edge of the trapezoid. Referring to fig. 3, fig. 3 is an enlarged view of a partial region of a display substrate 01 according to an embodiment of the present disclosure, and referring to fig. 3, a retaining wall structure 0121 includes two first filter structures (not shown in fig. 3) with different colors, where the two first filter structures with different colors are symmetric with respect to a first axial cross section M of the retaining wall structure 0121.

Alternatively, as shown in FIG. 3, the thickness d of each first filtering structure may range from d ≧ 2 microns. Illustratively, the thickness d of each first filtering structure may be 2.5 micrometers, 3 micrometers, or 4 micrometers, and so on. The width w of each first light filtering structure may be in a range of 1 micrometer or less and w or less than L/4, where L is the minimum width of the retaining wall structure 0121 where the first light filtering structure is located, in this embodiment of the present application, the retaining wall structure 0121 may be a ladder structure, and the width of a side of the retaining wall structure 0121 close to the substrate 011 may be greater than the width of a side far away from the substrate 011, and then L may be the width of a side of the retaining wall structure 0121 far away from the substrate 011. As will be readily understood by those skilled in the art, L is typically greater than 10 microns to ensure resolution of the display substrate and accuracy of the quantum dot structure. For example, the minimum width L of the retaining wall structure 0121 may be 10 micrometers, and the width w of the first filter structure may range from 1 micrometer to 2.5 micrometers. For example, when L is 10 micrometers, the width w of the first filtering structure may be 1 micrometer, 1.5 micrometers, 2 micrometers, or the like.

Optionally, referring to fig. 4, fig. 4 is a schematic structural diagram of another display substrate 01 provided in an embodiment of the present application, and referring to fig. 4, on the basis of fig. 3, the display substrate 01 further includes: and a second filter layer (not shown in fig. 4) located between the substrate 011 and the quantum dot layer 013, the second filter layer including second filter structures of at least two different colors, the second filter structures being located in the pixel regions, and in each pixel region, the color of the second filter structures being the same as the color of the quantum dot structures. Exemplarily, fig. 4 illustrates that the second filter structures of at least two different colors include a red filter structure 0151, a green filter structure 0152 and a blue filter structure 0153, referring to fig. 4, the red filter structure 0151 and the red quantum dot structure 0131 are located in the same pixel region, and the red filter structure 0151 and the red quantum dot structure 0131 are overlapped in a direction away from the substrate base plate 011; the green light filtering structure 0152 and the green quantum dot structure 0132 are positioned in the same pixel region, and the green light filtering structure 0152 and the green quantum dot structure 0132 are superposed along the direction far away from the substrate base plate 011; the blue filter structure 0153 and the blue quantum dot structure 0133 are located in the same pixel region, and the blue filter structure 0153 and the blue quantum dot structure 0133 are superposed along a direction far away from the substrate 011.

Optionally, in this embodiment of the application, the retaining wall structures 0121 on two sides of each quantum dot structure include two different color first filter structures, where, in the two different color first filter structures, a color of the first filter structure far away from each quantum dot structure is the same as a color of each quantum dot structure. For example, as shown in fig. 2, in two retaining wall structures 0121 on two sides of the red quantum dot structure 0131, one of the retaining wall structures 0121 includes a red filter structure 0141 and a green filter structure 0142, the red filter structure 0141 is far away from the red quantum dot structure 0131 relative to the green filter structure 0142, the other retaining wall structure 0121 includes a red filter structure 0141 and a blue filter structure 0143, the red filter structure 0141 is far away from the red quantum dot structure 0131 relative to the blue filter structure 0143; in the two retaining wall structures 0121 on two sides of the green quantum dot structure 0132, one of the retaining wall structures 0121 includes a green filter structure 0142 and a red filter structure 0141, the green filter structure 0142 is far away from the green quantum dot structure 0132 relative to the red filter structure 0141, the other retaining wall structure 0121 includes a blue filter structure 0143 and a green filter structure 0142, the green filter structure 0142 is far away from the green quantum dot structure 0132 relative to the blue filter structure 0143; in the two retaining wall structures 0121 on two sides of the blue quantum dot structure 0133, one of the retaining wall structures 0121 includes a blue filter structure 0143 and a green filter structure 0142, the blue filter structure 0143 is far from the blue quantum dot structure 0133 relative to the green filter structure 0142, the other retaining wall structure 0121 includes a red filter structure 0141 and a blue filter structure 0143, and the blue filter structure 0143 is far from the blue quantum dot structure 0133 relative to the red filter structure 0141.

Or, optionally, the retaining wall structures on two sides of each quantum dot structure include two different color first filter structures, and in the two different color first filter structures, the color of the first filter structure close to the quantum dot structure is the same as the color of each quantum dot structure. For example, as shown in fig. 4, two wall-retaining structures 0121 on two sides of the red quantum dot structure 0131, one wall-retaining structure 0121 includes a red filter structure 0141 and a green filter structure 0142 thereon, the red filter structure 0141 is close to the red quantum dot structure 0131 relative to the green filter structure 0142, the other wall-retaining structure 0121 includes a red filter structure 0141 and a blue filter structure 0143 thereon, the red filter structure 0141 is close to the red quantum dot structure 0131 relative to the blue filter structure 0143; of the two retaining wall structures 0121 on both sides of the green quantum dot structure 0132, one of the retaining wall structures 0121 includes a green filter structure 0142 and a red filter structure 0141, the green filter structure 0142 is close to the green quantum dot structure 0132 relative to the red filter structure 0141, the other retaining wall structure 0121 includes a blue filter structure 0143 and a green filter structure 0142, the green filter structure 0142 is close to the green quantum dot structure 0132 relative to the blue filter structure 0143; in the two retaining wall structures 0121 on two sides of the blue quantum dot structure 0133, one of the retaining wall structures 0121 includes a blue filter structure 0143 and a green filter structure 0142, the blue filter structure 0143 is close to the blue quantum dot structure 0133 relative to the green filter structure 0142, the other retaining wall structure 0121 includes a red filter structure 0141 and a blue filter structure 0143, and the blue filter structure 0143 is close to the blue quantum dot structure 0133 relative to the red filter structure 0141.

It should be noted that, in the embodiment of the present application, a quantum dot layer includes a red quantum dot structure, a green quantum dot structure, and a blue quantum dot structure, and each of the first filter layer and the second filter layer includes a red filter structure, a green filter structure, and a blue filter structure, as an example, it is easily understood by a person skilled in the art that, in a case where the backlight is a blue backlight, the quantum dot layer may further include a red quantum dot structure and a green quantum dot structure, but does not include a blue quantum dot structure, and accordingly, the first filter layer and the second filter layer may also include a red filter structure and a green filter structure, but does not include a blue filter structure, and of course, when the quantum dot layer does not include a blue quantum dot structure, the first filter layer and the second filter layer may also include a blue filter structure, which is not limited by the embodiment of the present application.

As can be understood from the above description, in the embodiment of the present application, the first filtering structures on the retaining wall structures on two sides of each quantum dot structure can filter the lateral light emitted from the pixel region where the quantum dot structure is located, so as to prevent the color mixing of the display substrate. The effect of avoiding color mixing of the display substrate provided in the embodiment of the present application will be briefly described with reference to fig. 5 to 10.

Referring to fig. 5, it shows a spectrum diagram of lateral light rays emitted from a pixel region where a quantum dot structure is located (i.e. light rays emitted from the pixel region where the quantum dot structure is located and irradiated to an adjacent pixel region of the pixel region where the quantum dot structure is located, the lateral light rays emitted from the pixel region where the quantum dot structure is located include lateral light rays emitted from the quantum dot structure and lateral light rays not absorbed by the quantum dot structure in excitation light rays of the quantum dot structure), referring to fig. 5, a curve Q1 shows a spectrum diagram of lateral light rays emitted from a pixel region where a green quantum dot structure is located (including green lateral light rays emitted from the green quantum dot structure and blue lateral light rays not absorbed by the green quantum dot structure) under excitation of blue light rays, and a curve Q2 shows a spectrum diagram of lateral light rays emitted from a pixel region where a red quantum dot structure is located (including red lateral light rays emitted from the red quantum dot structure under excitation of blue light rays) And blue side light not absorbed by the red quantum dot structure), the display substrate is prone to color mixing due to the presence of side light in the different colored pixel regions, as can be seen from curves Q1 and Q2.

Referring to fig. 6, which shows a transmission spectrum of a first filter layer (i.e., a spectrum of light transmitted through the first filter layer) provided in an embodiment of the present application, referring to fig. 6, a curve Q3 shows the transmission spectrum of a blue filter structure, a curve Q4 shows the transmission spectrum of a green filter structure, and a curve Q5 shows the transmission spectrum of a red filter structure, as can be easily understood by referring to fig. 6 in combination with a blue wavelength (450 nm to 520 nm), a green wavelength (520 nm to 560 nm), and a red wavelength (625 nm to 700 nm), the first filter structure of each color allows light having the same color as that of the first filter structure to transmit therethrough, but prohibits light having a color different from that of the first filter structure from transmitting therethrough.

Please refer to fig. 7, which shows a comparison graph between lateral light emitted from a pixel region where a red quantum dot structure is located (i.e. light emitted from the pixel region where the quantum dot structure is located and irradiated to an adjacent pixel region of the pixel region where the quantum dot structure is located, the lateral light emitted from the pixel region where the quantum dot structure is located includes the lateral light emitted from the quantum dot structure and lateral light not absorbed by the quantum dot structure in the excitation light of the quantum dot structure) and the lateral light emitted from the pixel region where the red quantum dot structure is located provided in the related art, where a curve QD-R indicates a spectral graph of the lateral light emitted from the pixel region where the red quantum dot structure is located under excitation of blue light in the display substrate provided in the related art, and a curve QDR indicates G R indicates the display substrate provided in the embodiment of the present application, compared with the display substrate provided by the related art, in the display substrate provided by the embodiment of the application, because the first filter structures are arranged on the retaining wall structures at two sides of the red quantum dot structure, the light irradiated to the adjacent pixel areas of the pixel areas where the red quantum dot structure is located is less, and the display substrate is favorable for avoiding color mixing of the display substrate.

Please refer to fig. 8, which shows a comparison graph between lateral light emitted from a pixel region where a red quantum dot structure is located (i.e. light emitted from the pixel region where the quantum dot structure is located and irradiated to an adjacent pixel region of the pixel region where the quantum dot structure is located, the lateral light emitted from the pixel region where the quantum dot structure is located includes the lateral light emitted from the quantum dot structure and lateral light not absorbed by the quantum dot structure in the excitation light of the quantum dot structure) and the lateral light emitted from the pixel region where the red quantum dot structure is located provided in the related art, where a curve QD-R indicates a spectrum graph of the lateral light emitted from the pixel region where the red quantum dot structure is located under excitation of blue light in the display substrate provided in the related art, and a curve QDR indicates B indicates the display substrate provided in the embodiment of the present application, a spectrogram of lateral light emitted by the pixel region where the red quantum dot structure is located and passing through the first filtering structure (comprising the red filtering structure and the blue filtering structure) under the excitation of blue light, as can be readily understood by comparing the curves QD-R and QDR _ R _ B with the curves Q3 and Q5 shown in fig. 6, compared to the display substrate provided in the related art, in the display substrate provided by the embodiment of the application, because the first light filtering structures are arranged on the retaining wall structures at two sides of the red quantum dot structure, therefore, the light irradiated to the adjacent pixel area of the pixel area where the red quantum dot structure is located is less, and the transmittance of the red light emitted by the red quantum dot structure in the embodiment of the application is not more than 5% of the transmittance of the red light emitted by the red quantum dot structure in the related art, so that the display substrate is favorably prevented from color mixing.

Please refer to fig. 9, which shows a spectrum comparison graph of lateral light emitted from a pixel region where a green quantum dot structure is located (i.e. light emitted from the pixel region where the quantum dot structure is located and irradiated to an adjacent pixel region of the pixel region where the quantum dot structure is located, the lateral light emitted from the pixel region where the quantum dot structure is located includes the lateral light emitted from the quantum dot structure and the lateral light not absorbed by the quantum dot structure in the excitation light of the quantum dot structure) and the lateral light emitted from the pixel region where the green quantum dot structure is located provided in the related art, where a curve QD-G indicates a spectrum graph of the lateral light emitted from the pixel region where the green quantum dot structure is located under excitation of blue light in the display substrate provided in the related art, and a curve QDR _ B _ G indicates the display substrate provided in the embodiment of the present application, a spectrogram of lateral light emitted by the pixel region where the green quantum dot structure is located and passing through the first filtering structure (comprising the blue filtering structure and the green filtering structure) under the excitation of blue light, as can be readily understood by comparing the curves QD-G and QDR-B-G with the curves Q3 and Q4 shown in fig. 6, compared to the display substrate provided in the related art, in the display substrate provided by the embodiment of the application, because the first light filtering structures are arranged on the retaining wall structures at two sides of the green quantum dot structure, therefore, the light irradiated to the adjacent pixel area of the pixel area where the green quantum dot structure is located is less, the transmittance of the green light emitted by the green quantum dot structure in the embodiment of the application is not more than 15% of the transmittance of the green light emitted by the green quantum dot structure in the related technology, and thus the color mixing of the display substrate is avoided.

Please refer to fig. 10, which shows a comparison graph of a lateral light emitted from a pixel region where a green quantum dot structure is located (i.e. a light emitted from the pixel region where the quantum dot structure is located and irradiated to an adjacent pixel region of the pixel region where the quantum dot structure is located, the lateral light emitted from the pixel region where the quantum dot structure is located includes the lateral light emitted from the quantum dot structure and a lateral light not absorbed by the quantum dot structure in an excitation light of the quantum dot structure) and a lateral light emitted from a pixel region where the green quantum dot structure is located provided in the related art, where a curve QD-G indicates a spectral graph of the lateral light emitted from the pixel region where the green quantum dot structure is located under excitation of a blue light in a display substrate provided in the related art, and a curve QDR _ R _ G indicates the display substrate provided in the embodiment of the present application, the spectrogram of lateral light which is emitted by the pixel region where the green quantum dot structure is under the excitation of blue light and passes through the first filtering structure (specifically, the red filtering structure and the green filtering structure) is easily understood by comparing the curve QD-G with the curve QDR × R G and combining the curve Q4 and the curve Q5 shown in fig. 6, compared with the green quantum dot structure in the display substrate provided by the related art, in the display substrate provided by the embodiment of the present application, because the first filtering structure is arranged on the retaining wall structures on the two sides of the green quantum dot structure, the light irradiated to the adjacent pixel region of the pixel region where the green quantum dot structure is located is less, and therefore, the display substrate is helped to avoid color mixing.

The display substrate provided by the embodiments of the present application can be applied to the following methods, and the manufacturing method and the manufacturing principle of the display substrate in the embodiments of the present application can be referred to the description of the embodiments below.

Referring to fig. 11, a flowchart of a method of manufacturing a display substrate according to an embodiment of the present disclosure is shown, where the method may be used to manufacture the display substrate 01 shown in fig. 2 or fig. 4, and referring to fig. 11, the method includes the following steps:

In step 401, a black matrix pattern including a plurality of pixel regions defined by barrier structures is formed on a substrate.

In step 402, a quantum dot layer and a first filter layer are formed on a substrate with a black matrix pattern, the quantum dot layer includes quantum dot structures of at least two different colors, the quantum dot structures are located in a pixel region, the first filter layer includes first filter structures of at least two different colors, the first filter structures are located on the retaining wall structures, one side of the first filter structures, which is far away from the substrate, protrudes out of one side of the quantum dot structures, which is far away from the substrate, and the first filter structures located on the retaining wall structures on two sides of each quantum dot structure include filter structures with different colors from the quantum dot structures.

In summary, in the display substrate manufactured by the method, the black matrix pattern includes a plurality of pixel regions defined by the retaining wall structures, the quantum dot layer includes quantum dot structures of at least two different colors, the first filter layer includes first filter structures of at least two different colors, the quantum dot structures are located in the pixel regions, the first filter structures are located on the retaining wall structures, a surface of the first filter structures away from the substrate protrudes out of a surface of the quantum dot structures away from the substrate, the first filter structures located on the retaining wall structures on both sides of each quantum dot structure include filter structures of a color different from that of the quantum dot structures, so that the first filter structures located on the retaining wall structures on both sides of each quantum dot structure can filter the lateral light emitted by the quantum dot structure, which helps to prevent the lateral light emitted by the quantum dot structure from irradiating the adjacent pixel regions, thereby avoiding color mixing of the display substrate.

Referring to fig. 12, a flowchart of a method for manufacturing another display substrate provided in an embodiment of the present application is shown, where the embodiment takes the display substrate 01 shown in fig. 2 as an example for description, and referring to fig. 12, the method includes the following steps:

in step 501, a black matrix pattern is formed on a substrate, wherein the black matrix pattern includes a plurality of pixel regions defined by barrier structures.

Referring to fig. 13, which shows a schematic diagram of a black matrix pattern 012 formed on a substrate 011 according to an embodiment of the present disclosure, referring to fig. 13, the black matrix pattern 012 includes a retaining wall structure 0121 and a plurality of pixel regions K defined by the retaining wall structure 0121, a cross section of the retaining wall structure 0121 may be a trapezoid, and a surface of the retaining wall structure 0121 away from the substrate 011 may be a plane.

Alternatively, any one of spin coating or blade coating processes may be adopted to form the black matrix solution material layer on the substrate 011, then bake the black matrix solution material layer, remove the solvent of the black matrix solution material layer to obtain the black matrix material layer, then sequentially expose and develop the black matrix material layer to obtain the black matrix pattern 012, and finally cure the black matrix pattern 012 by baking.

In step 502, a first filter layer is formed on the substrate with the black matrix pattern, the first filter layer includes at least two first filter structures with different colors, and the first filter structures are located on the barrier structures.

In the embodiment of the application, for example, the at least two first filter structures with different colors include a red filter structure, a green filter structure, and a blue filter structure, the red filter structure, the green filter structure, and the blue filter structure may be formed on the substrate with the black matrix pattern by three processes, each of the barrier structures may include two first filter structures with different colors, and the two first filter structures with different colors may be symmetrical with respect to the first axial cross section of the barrier structure.

Alternatively, the material of each of the red filter structure, the green filter structure and the blue filter structure may be a color-resistant material of a corresponding color, and the forming of the first filter layer on the substrate on which the black matrix pattern is formed may include the following three steps:

and (1) forming a red light filtering structure on the substrate with the black matrix pattern.

For example, please refer to fig. 14, which shows a schematic diagram after forming a red filter structure 0141 on a substrate 011 of the present application, wherein a black matrix pattern 012 is formed thereon. A red color resist layer may be formed on the substrate 011, on which the black matrix pattern 012 is formed, by any one of coating, magnetron sputtering, thermal evaporation, or Plasma Enhanced Chemical Vapor Deposition (PECVD), and then processed by a one-step patterning process to obtain a red filter structure 0141, where the red filter structure 0141 is located on the retaining wall structure 0121.

And (2) forming a green filter structure on the substrate with the red filter structure.

For example, please refer to fig. 15, which shows a schematic diagram after forming a green filter structure 0142 on a substrate 011 with a red filter structure 0141 according to an embodiment of the present application. The green color resist layer may be formed on the substrate 011, on which the red filter structure 0141 is formed, by any one of coating, magnetron sputtering, thermal evaporation, PECVD, etc., and then processed by a one-step composition process to obtain the green filter structure 0142, wherein the green filter structure 0142 is located on the retaining wall structure 0121.

And (3) forming a blue light filtering structure on the substrate with the green light filtering structure.

For example, please refer to fig. 16, which shows a schematic diagram after forming a blue color filter structure 0143 on a substrate 011 with a green color filter structure 0142 according to an embodiment of the present application. A blue color-resisting material layer may be formed on the substrate 011, on which the green filter structure 0142 is formed, by coating, magnetron sputtering, thermal evaporation, or PECVD, and then the blue color-resisting material layer is processed by a one-step composition process to obtain the blue filter structure 0143, wherein the blue filter structure 0143 is located on the retaining wall structure 0121.

After the above steps (1) to (3), a red filter structure 0141, a green filter structure 0142 and a blue filter structure 0143 may be formed on the substrate 011 forming the black matrix pattern 012, the red filter structure 0141, the green filter structure 0142 and the blue filter structure 0143 may constitute a first filter layer 014, and the red filter structure 0141, the green filter structure 0142 and the blue filter structure 0143 are all located on the bank structure 0121, in this embodiment, the red filter structure 0141, the green filter structure 0142 and the blue filter structure 0143 are all first filter structures, as shown in fig. 16, each bank structure 0121 includes two first filter structures with different colors. It should be noted that, in the embodiments of the present application, an example of sequentially forming a red filter structure, a green filter structure, and a blue filter structure is taken as an example for description, in practical applications, the red filter structure, the green filter structure, and the blue filter structure may be formed in any order, and the order of forming the red filter structure, the green filter structure, and the blue filter structure is not limited in the embodiments of the present application.

In step 503, a lyophobic treatment is performed on a side of the first filter layer away from the substrate.

Alternatively, a preset plasma may be used to perform plasma treatment on the surface of the first filter layer away from the base substrate, so as to change the lyophobicity of the surface of the first filter layer away from the base substrate, and thus perform lyophobicity treatment on the surface of the first filter layer away from the base substrate. The predetermined plasma may be a fluorine-containing plasma, for example, the predetermined plasma may be at least one of a fluorine-containing gas such as fluorocarbon or sulfur fluoride.

Alternatively, with reference to fig. 16, a mask (not shown in fig. 16) may be disposed on a side of the first filter layer 014 away from the substrate 011, so that an opening region of the mask corresponds to each first filter structure of the first filter layer (that is, each first filter structure of the first filter layer is exposed through the opening region of the mask), and then a predetermined plasma is used to perform plasma processing on a side of the mask away from the substrate 011, where the first filter layer 014 is away from the substrate 011.

In step 504, a quantum dot layer is formed on the substrate on which the first filter layer is formed, the quantum dot layer including quantum dot structures of at least two colors, the quantum dot structures being located in the pixel region, and a surface of the first filter structure away from the substrate protruding over a surface of the quantum dot structures away from the substrate.

In the embodiment of the application, for example, the quantum dot structures of at least two colors include a red quantum dot structure, a green quantum dot structure, and a blue quantum dot structure, the red quantum dot structure, the green quantum dot structure, and the blue quantum dot structure may be formed on the substrate with the first filter layer by three processes, and each quantum dot structure may be located in one pixel region.

Alternatively, the material of each of the red, green and blue quantum dot structures may be a quantum dot material of a corresponding color, and forming the quantum dot layer on the substrate on which the first filter layer is formed may include the following three steps:

and (1) forming a red quantum dot structure on the substrate base plate on which the first filter layer is formed.

For example, referring to fig. 17, it shows a schematic diagram after forming a red quantum dot structure 0131 on a substrate 011 with a first filter layer 014 formed thereon, one surface of the red quantum dot structure 0131 far from the substrate 011 is a curved surface protruding in a direction far from the substrate 011, one surface of any first filter structure far from the substrate 011 protrudes from one surface of the red quantum dot structure 0131 far from the substrate 011, the first filter structures on two retaining wall structures 0121 at two sides of each red quantum dot structure 0131 include a first filter structure with a color different from that of the red quantum dot structure 0131 and a first filter structure with a color identical to that of the red quantum dot structure 0131, as shown in fig. 17, one of the two retaining wall structures 0121 at two sides of the red quantum dot structure 0131 includes a red filter structure 0141 and a green filter structure 0142, the other retaining wall structure 0121 includes a red filter structure 0141 and a blue filter structure 0143. Alternatively, an inkjet printing process may be used to print the red quantum dot material in the red pixel region, and cure the red quantum dot material to obtain the red quantum dot structure 0131.

And (2) forming a green quantum dot structure on the substrate base plate with the red quantum dot structure.

For example, referring to fig. 18, which shows a schematic diagram after forming a green quantum dot structure 0132 on a substrate 011 formed with a red quantum dot structure 0131, one surface of the green quantum dot structure 0132 away from the substrate 011 is a curved surface protruding in a direction away from the substrate 011, one surface of any first filter structure away from the substrate 011 protrudes from one surface of the green quantum dot structure 0132 away from the substrate 011, the first filter structures on the retaining wall structures 0121 on both sides of each green quantum dot structure 0132 include a first filter structure with a color different from that of the green quantum dot structure 0132 and a first filter structure with a color identical to that of the green quantum dot structure 0132, as shown in fig. 17, one of the two retaining wall structures 0121 on both sides of the green quantum dot structure 0132 includes a green filter structure 0142 and a red filter structure 0141, the other retaining wall structure 0121 includes a blue filter structure 0143 and a green filter structure 0142. Alternatively, an inkjet printing process may be used to print the green quantum dot material in the green pixel region, and cure the green quantum dot material to obtain the green quantum dot structure 0132.

And (3) forming a blue quantum dot structure on the substrate base plate with the green quantum dot structure.

A schematic diagram after forming the blue quantum dot structure 0133 on the substrate base plate 011 formed with the green quantum dot structure 0132 can be shown in fig. 2. One surface of the blue quantum dot structure 0133 far from the substrate 011 is a curved surface protruding towards a direction far from the substrate 011, one surface of any first filter structure far from the substrate 011 protrudes out of one surface of the blue quantum dot structure 0133 far from the substrate 011, the first filter structures on the retaining wall structures 0121 on two sides of each blue quantum dot structure 0133 comprise first filter structures with different colors from each blue quantum dot structure 0133 and first filter structures with the same colors as the blue quantum dot structure 0133, as shown in fig. 2, two retaining wall structures 0121 on two sides of the blue quantum dot structure 0133 comprise a blue filter structure 0143 and a green filter structure 0142 on one retaining wall structure 0121, and a red filter structure 0141 and a blue filter structure 0143 on the other retaining wall structure 0121. Alternatively, an inkjet printing process may be used to print the blue quantum dot material in the blue pixel region, and cure the blue quantum dot material to obtain the blue quantum dot structure 0133.

After the above steps (1) to (3), a red quantum dot structure 0131, a green quantum dot structure 0132, and a blue quantum dot structure 0133 may be formed on the base substrate 011 on which the first filter layer 014 is formed, the red quantum dot structure 0131, the green quantum dot structure 0132, and the blue quantum dot structure 0133 constituting the quantum dot layer 013. In the embodiments of the present application, the red quantum dot structure, the green quantum dot structure, and the blue quantum dot structure are sequentially formed as an example, and in practical applications, the red quantum dot structure, the green quantum dot structure, and the blue quantum dot structure may be formed in any order.

In summary, in the display substrate manufactured by the method, the black matrix pattern includes a plurality of pixel regions defined by the retaining wall structures, the quantum dot layer includes quantum dot structures of at least two different colors, the first filter layer includes first filter structures of at least two different colors, the quantum dot structures are located in the pixel regions, the first filter structures are located on the retaining wall structures, a surface of the first filter structures away from the substrate protrudes out of a surface of the quantum dot structures away from the substrate, the first filter structures located on the retaining wall structures on both sides of each quantum dot structure include filter structures of a color different from that of the quantum dot structures, so that the first filter structures located on the retaining wall structures on both sides of each quantum dot structure can filter the lateral light emitted by the quantum dot structure, which helps to prevent the lateral light emitted by the quantum dot structure from irradiating the adjacent pixel regions, thereby preventing color mixing of the display substrate.

Referring to fig. 19, a flowchart of a method for manufacturing a display substrate according to another embodiment of the present disclosure is shown, and the present embodiment takes the manufacturing of the display substrate 01 shown in fig. 4 as an example. Referring to fig. 19, the method includes the steps of:

in step 801, a black matrix pattern is formed on a substrate, the black matrix pattern including a plurality of pixel regions defined by bank structures.

The step 501 of the embodiment shown in fig. 12 and the corresponding drawings of the step 501 may be referred to for the implementation process of the step 801, and details of the embodiment of the present application are not repeated here.

In step 802, a first filter layer and a second filter layer are formed on the substrate with the black matrix pattern, the first filter layer includes first filter structures with at least two different colors, the first filter structures are located on the barrier structures, the second filter layer includes second filter structures with at least two different colors, and the second filter structures are located in the pixel regions.

In the embodiments of the present application, the first filter layer and the second filter layer may be simultaneously prepared. In the embodiment of the application, taking as an example that the first filter structures of the first filter layer and the second filter structures of the second filter layer, which have at least two different colors, both include a red filter structure, a green filter structure, and a blue filter structure, the red filter structure, the green filter structure, and the blue filter structure may be formed on the substrate with the black matrix pattern by three processes, and the filter structures with the same color in the first filter layer and the second filter layer may be formed simultaneously, each of the barrier structures may include the first filter structures of two different colors, the first filter structures of two different colors on each of the barrier structures may be symmetrical with respect to the first axial cross section of the barrier structure, and each of the pixel regions may have one of the second filter structures.

Optionally, in this embodiment, the material of each of the red filter structure, the green filter structure, and the blue filter structure may be a color-resistant material of a corresponding color. For example, forming the first filter layer and the second filter layer on the substrate on which the black matrix pattern is formed may include the following three steps:

For example, please refer to fig. 20, which shows a schematic diagram after forming a red filter structure 0141 and a red filter structure 0151 on a substrate 011 with a black matrix pattern 012 according to an embodiment of the present application. Alternatively, a red color resistance material layer may be formed on the substrate 011, on which the black matrix pattern 012 is formed, by a coating, magnetron sputtering, thermal evaporation, or PECVD process, and then the red color resistance material layer is processed by a one-step composition process to obtain a red filter structure 0141 and a red filter structure 0151, where the red filter structure 0141 is located on the retaining wall structure 0121 and the red filter structure 0151 is located in the pixel region.

And (2) forming a green light filtering structure on the substrate with the red light filtering structure.

For example, please refer to fig. 21, which shows a schematic diagram after forming a green filter structure 0142 and a green filter structure 0152 on a substrate 011 with a red filter structure formed thereon according to an embodiment of the present application. Alternatively, a green color resistance material layer may be formed on the substrate 011, on which the red color filter structure is formed, by a coating, magnetron sputtering, thermal evaporation, or PECVD process, and then the green color resistance material layer is processed by a one-step composition process to obtain a green color filter structure 0142 and a green color filter structure 0152, where the green color filter structure 0142 is located on the retaining wall structure 0121 and the green color filter structure 0152 is located in the pixel region.

For example, please refer to fig. 22, which shows a schematic diagram after forming a blue filter structure 0143 and a blue filter structure 0153 on a substrate 011 with a green filter structure formed thereon according to an embodiment of the present application. The blue color resistance material layer can be formed on the substrate 011 with the green color filter structure by coating, magnetron sputtering, thermal evaporation or PECVD, and then the blue color resistance material layer is processed by one-step composition process to obtain the blue color filter structure 0143 and the blue color filter structure 0153, wherein the blue color filter structure 0143 is located on the retaining wall structure 0121, and the blue color filter structure 0153 is located in the pixel region.

After the above steps (1) to (3), a first filter layer 014 and a second filter layer 015 may be formed on the substrate 011 on which the black matrix pattern 012 is formed, wherein the first filter structure of the first filter layer 014 is located on the bank structure 0121, and the second filter structure of the second filter layer 015 is located in the pixel region. In addition, in the embodiments of the present application, the red filter structure, the green filter structure, and the blue filter structure are sequentially formed as an example, and in practical applications, the red filter structure, the green filter structure, and the blue filter structure may be formed in any order.

In step 803, a liquid-repellent treatment is performed on a side of the first filter layer away from the substrate.

The step 503 in the embodiment shown in fig. 12 of the present application may be referred to for the implementation process of the step 803, and is not described herein again in the embodiment of the present application.

In step 804, a quantum dot layer is formed on the substrate on which the second filter layer is formed, the quantum dot layer including quantum dot structures of at least two colors, the quantum dot structures being located within the pixel regions, in each of which the color of the quantum dot structure is the same as the color of the second filter structure.

In the embodiment of the application, for example, the quantum dot structures of at least two colors include a red quantum dot structure, a green quantum dot structure, and a blue quantum dot structure, the red quantum dot structure, the green quantum dot structure, and the blue quantum dot structure may be formed on the substrate with the second filter layer by three processes, and each quantum dot structure may be located in one pixel region.

Alternatively, the material of each of the red, green and blue quantum dot structures may be a quantum dot material of a corresponding color, and forming the quantum dot layer on the substrate on which the second filter layer is formed may include the following three steps:

and (1) forming a red quantum dot structure on the substrate with the second filter layer.

For example, please refer to fig. 23, which shows a schematic diagram after a red quantum dot structure 0131 is formed on a substrate 011 on which a second filter layer 015 is formed, in which the red quantum dot structure 0131 is superimposed on a surface of the red filter structure 0151 away from the substrate 011, and a surface of the red quantum dot structure 0131 away from the substrate 011 is a curved surface protruding in a direction away from the substrate 011. Alternatively, an inkjet printing process may be used to print the red quantum dot material in the red pixel region, and cure the red quantum dot material to obtain the red quantum dot structure 0131.

For example, please refer to fig. 24, which shows a schematic diagram after a green quantum dot structure 0132 is formed on a substrate base plate 011 with a red quantum dot structure 0131 formed thereon, the green quantum dot structure 0132 is superimposed on one side of a green filter structure 0152 away from the substrate base plate 011, and one side of the green quantum dot structure 0132 away from the substrate base plate 011 is a curved surface protruding in a direction away from the substrate base plate 011. Alternatively, an inkjet printing process may be used to print the green quantum dot material in the green pixel region, and cure the green quantum dot material to obtain the green quantum dot structure 0132.

Referring to fig. 4, a schematic diagram after a blue quantum dot structure 0133 is formed on a substrate base plate 011 on which a green quantum dot structure 0132 is formed may be that the blue quantum dot structure 0133 is superimposed on one face of the blue filter structure 0153 away from the substrate base plate 011, and one face of the blue quantum dot structure 0133 away from the substrate base plate 011 is a curved face protruding in a direction away from the substrate base plate 011. Alternatively, an inkjet printing process may be used to print the blue quantum dot material in the blue pixel region, and cure the blue quantum dot material to obtain the blue quantum dot structure 0133.

After the above-described steps (1) to (3), a red quantum dot structure 0131, a green quantum dot structure 0132, and a blue quantum dot structure 0133 may be formed on the base substrate 011 on which the second filter layer 015 is formed, the red quantum dot structure 0131, the green quantum dot structure 0132, and the blue quantum dot structure 0133 constituting the quantum dot layer 013. In the embodiments of the present application, the red quantum dot structure, the green quantum dot structure, and the blue quantum dot structure are sequentially formed as an example, and in practical applications, the red quantum dot structure, the green quantum dot structure, and the blue quantum dot structure may be formed in any order.

In the embodiment of the present application, the one-step patterning process includes: photoresist coating, exposing, developing, etching, and photoresist stripping, and thus, the processing of the material layer (e.g., the blue color-resistant material layer) by the one-time patterning process may include: coating a layer of photoresist on the material layer to form a photoresist layer, exposing the photoresist layer by using a mask to form a complete exposure area and a non-exposure area on the photoresist layer, then processing by using a developing process to completely remove the photoresist on the complete exposure area, completely retaining the photoresist on the non-exposure area, etching the area corresponding to the complete exposure area on the material layer by using an etching process, then stripping the photoresist on the non-exposure area, and forming a corresponding structure (for example, a blue light filtering structure 0143) on the area corresponding to the non-exposure area on the material layer. It is to be understood that, when the photoresist mentioned in this paragraph is a positive photoresist, the photoresist may also be a negative photoresist, and when the photoresist is a negative photoresist, the process of the one-time patterning process may refer to the description in this paragraph, and the description of the embodiments of this application is not repeated herein.

The sequence of the steps of the method for manufacturing a display substrate provided in the embodiments of the present application can be appropriately adjusted, and the steps can be increased or decreased according to the circumstances, and any method that can be easily conceived by those skilled in the art within the technical scope of the present application shall be covered by the protection scope of the present application, and therefore, the details thereof are not repeated.

Based on the same inventive concept, an embodiment of the present application further provides a display device, where the display device includes the display substrate provided in the above embodiment, and the display device may be a liquid crystal display device or a Quantum Dot Light Emitting diode (QLED) display device. The display device can be any product or component with a display function, such as electronic paper, a mobile phone, a tablet personal computer, a television, a display, a notebook computer, a digital photo frame, a navigator or wearable equipment and the like.

The term "at least one of a or B" in the present application is only one kind of association relationship describing an associated object, and means that three kinds of relationships may exist, for example, at least one of a and B may mean: a exists alone, A and B exist simultaneously, and B exists alone.

The above description is only exemplary of the present application and should not be taken as limiting, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims

1. A display substrate, comprising:

the first filter layer comprises at least two first filter structures with different colors, the first filter structures are positioned on the retaining wall structures, one surfaces, far away from the substrate base plate, of the first filter structures protrude out of one surfaces, far away from the substrate base plate, of the quantum dot structures, and the first filter structures positioned on the retaining wall structures on two sides of each quantum dot structure comprise filter structures with different colors from the quantum dot structures;

the retaining wall structures on two sides of each quantum dot structure comprise first light filtering structures with two different colors;

the first light filtering structures with two different colors on each retaining wall structure are symmetrical about a first axial section of the retaining wall structure;

the width range of each first light filtering structure is more than or equal to 1 micrometer and less than or equal to L/4, wherein L is the minimum width of the retaining wall structure where the first light filtering structure is located, and w is the width of each first light filtering structure;

In the first filter structures with the two different colors, the color of the first filter structure far away from the quantum dot structure is the same as the color of the quantum dot structure.

2. The display substrate of claim 1, further comprising:

3. The display substrate of claim 2,

the quantum dot layer comprises a red quantum dot structure, a green quantum dot structure and a blue quantum dot structure;

4. A method of manufacturing a display substrate, the method comprising:

one surface, far away from the substrate, of the first light filtering structure protrudes out of one surface, far away from the substrate, of the quantum dot structure, the first light filtering structures on the retaining wall structures on two sides of each quantum dot structure comprise light filtering structures with different colors from the quantum dot structure, and the retaining wall structures on two sides of each quantum dot structure comprise the first light filtering structures with two different colors; the first filtering structures with two different colors on each retaining wall structure are symmetrical about a first axial section of the retaining wall structure; the width range of each first light filtering structure is 1 micrometer and is not less than w and not more than L/4, wherein L is the minimum width of the retaining wall structure where the first light filtering structure is located, w is the width of each first light filtering structure, and in the first light filtering structures with two different colors, the color of the first light filtering structure far away from the quantum dot structure is the same as the color of the quantum dot structure.

5. The method of claim 4, wherein the forming of the quantum dot layer and the first filter layer on the substrate on which the black matrix pattern is formed comprises:

forming the first filter layer on the substrate with the black matrix pattern;

6. The method of claim 5,

after forming the first filter layer on the base substrate on which the black matrix pattern is formed, the method further includes: carrying out liquid-repellent treatment on one surface of the first filter layer, which is far away from the substrate base plate;

7. The method of claim 5, wherein after forming the black matrix pattern on the base substrate, the method further comprises:

8. The method of claim 7,

the second filter layer and the first filter layer are prepared through the same process.

9. The method according to claim 7 or 8,

10. A display device comprising the display substrate according to any one of claims 1 to 3.