CN110611046A - Double-sided display panel - Google Patents
Double-sided display panel Download PDFInfo
- Publication number
- CN110611046A CN110611046A CN201910805404.0A CN201910805404A CN110611046A CN 110611046 A CN110611046 A CN 110611046A CN 201910805404 A CN201910805404 A CN 201910805404A CN 110611046 A CN110611046 A CN 110611046A
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- layer
- transparent film
- pixel
- film layer
- display panel
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 73
- 239000002184 metal Substances 0.000 claims abstract description 73
- 239000010408 film Substances 0.000 claims description 49
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 18
- 229910052709 silver Inorganic materials 0.000 claims description 18
- 239000004332 silver Substances 0.000 claims description 18
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 11
- 229910052749 magnesium Inorganic materials 0.000 claims description 11
- 239000011777 magnesium Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 3
- 230000009977 dual effect Effects 0.000 claims 2
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229920001621 AMOLED Polymers 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention relates to the technical field of double-sided display panels, in particular to a double-sided display panel.A metal anode layer and a metal cathode layer are arranged into transparent films, so that light generated by an organic light-emitting layer can penetrate through the metal anode layer and the metal cathode layer respectively to be emitted, the panel can realize the double-sided light-emitting function, and the double-sided display of the panel is realized; the display panel designed by the scheme can improve the brightness and contrast of a panel screen while obviously reducing energy consumption.
Description
Technical Field
The invention relates to the technical field of double-sided display panels, in particular to a double-sided display panel.
Background
The Active-matrix Organic Light Emitting Diode (AMOLED) technology has the technical advantages of high brightness, high contrast, high color saturation and the like, and has become a standard configuration of high-end mobile phones and high-end television products in the current consumer electronics field; with the continuous widening of the application of commercial display field at present, the double-sided display technology has gradually gained acceptance and application, and has gradually shown many possibilities in the commercial display field; the currently implemented double-sided Display technology is based on a Liquid Crystal Display (LCD) technology, and is implemented by using a backlight, and two LCD panels are respectively fixed on two sides of the backlight, but the overall energy consumption is large, the thickness of the whole machine is large, and the brightness and the contrast are significantly different compared with the AMOLED.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: provided is a display panel capable of realizing double-sided light emission.
In order to solve the technical problems, the invention adopts the technical scheme that:
a double-sided display panel comprises a pixel structure, wherein the pixel structure comprises more than two pixel unit groups with the same structure, and the more than two pixel unit groups are distributed in an array;
each pixel unit group comprises more than two pixel units, each pixel unit comprises a TFT (thin film transistor) device and a main pixel, and the TFT devices are electrically connected with the main pixels;
the main pixel comprises a substrate, wherein a metal anode layer, an organic light emitting layer and a metal cathode layer are sequentially stacked on the surface of the substrate;
the metal anode layer and the metal cathode layer are both transparent film layers.
The invention has the beneficial effects that:
the metal anode layer and the metal cathode layer are arranged to be transparent films, so that light generated by the organic light emitting layer can penetrate through the metal anode layer and the metal cathode layer respectively to be emitted, the panel can achieve a double-sided light emitting function, and double-sided display of the panel is achieved.
Drawings
FIG. 1 is a schematic structural diagram of a pixel structure of a dual-sided display panel according to the present invention;
FIG. 2 is a schematic structural diagram of a main pixel of a dual-sided display panel according to the present invention;
FIG. 3 is a schematic diagram of the light path structure of a dual-sided display panel according to the present invention;
FIG. 4 is a schematic diagram of the light path structure of a dual-sided display panel according to the present invention;
description of reference numerals:
1. a pixel cell group;
2. a pixel unit;
3. a TFT device;
4. a main pixel; 401. a substrate; 402. a metal anode layer; 403. an organic light emitting layer; 404. a metal cathode layer;
5. a sub-pixel.
Detailed Description
In order to explain technical contents, achieved objects, and effects of the present invention in detail, the following description is made with reference to the accompanying drawings in combination with the embodiments.
Referring to fig. 1, the technical solution provided by the present invention is:
a double-sided display panel comprises a pixel structure, wherein the pixel structure comprises more than two pixel unit groups with the same structure, and the more than two pixel unit groups are distributed in an array;
each pixel unit group comprises more than two pixel units, each pixel unit comprises a TFT (thin film transistor) device and a main pixel, and the TFT devices are electrically connected with the main pixels;
the main pixel comprises a substrate, wherein a metal anode layer, an organic light emitting layer and a metal cathode layer are sequentially stacked on the surface of the substrate;
the metal anode layer and the metal cathode layer are both transparent film layers.
From the above description, the beneficial effects of the present invention are:
the metal anode layer and the metal cathode layer are arranged to be transparent films, so that light generated by the organic light emitting layer can penetrate through the metal anode layer and the metal cathode layer respectively to be emitted, the panel can achieve a double-sided light emitting function, and double-sided display of the panel is achieved.
Further, the metal anode layer comprises a first transparent film layer, a second transparent film layer and a third transparent film layer are sequentially stacked on the surface of the first transparent film layer, the first transparent film layer and the third transparent film layer are both made of indium tin oxide, the second transparent film layer is made of silver, the thicknesses of the first transparent film layer and the third transparent film layer are both 0.15 μm, and the thickness of the second transparent film layer is 0.15-0.2 μm.
It can be known from the above description that the metal anode layer is configured into three structural film layers, because indium tin oxide is a transparent conductive film, the metal anode layer has good conductivity and transparency, the first transparent film layer and the third transparent film layer are made of indium tin oxide, which can improve the light transmittance of the metal anode layer, the second transparent film layer is made of silver, and is an opaque metal film layer when the thickness of the silver film layer is thicker, and when the thickness of silver is controlled to be 0.15-0.2 μm, the silver film layer can be changed into a transparent film layer, which can ensure that light generated by the organic light emitting layer can penetrate through the second transparent film layer, thereby not only ensuring the light transmittance efficiency of the metal anode layer, but also improving the hole injection efficiency of the metal anode layer.
Furthermore, the material of the metal anode layer is indium tin oxide, and the thickness of the metal anode layer is 0.55 μm.
As can be seen from the above description, since the ito is a semiconductor transparent conductive film with good conductivity and transparency, the material of the metal anode layer is ito, and the thickness of the metal anode layer is set to 0.55 μm, which not only improves the light transmission efficiency of the metal anode layer, but also effectively reduces the thickness of the double-sided display panel.
Further, the pixel unit further comprises a sub-pixel electrically connected with the TFT device and configured to display white light.
It can be known from the above description that, when the metal anode layer is transparent, the metal anode layer only has the reflection phenomenon of minimum partly light, and the reflection phenomenon can not take place for the light of very big part, display panel's display brightness can be because the light that organic luminescent layer produced can pierce through metal anode layer and metal cathode layer respectively and jet out and halve to original half, through set up the sub-pixel in every pixel unit, be connected sub-pixel and TFT device electricity, because the sub-pixel shows white light, can promote the display brightness of panel unilateral screen under the condition that does not sacrifice panel display resolution.
Furthermore, the TFT device is respectively and electrically connected with the main pixel and the sub-pixels through wires, and the wires are made of indium tin oxide.
As can be seen from the above description, the display brightness of the panel screen can be further improved by using the conductive wires made of ITO.
Further, the metal cathode layer is made of magnesium and silver materials together, and the ratio of magnesium to silver is 1: and 9, the thickness of the metal cathode layer is 0.15 mu m.
As can be seen from the above description, the metal cathode layer is made of magnesium and silver materials together, and the ratio of magnesium to silver is 1:9, the light transmission efficiency of the metal cathode layer can be improved, and the thickness of the double-sided display panel is effectively reduced.
Referring to fig. 1 to 4, a first embodiment of the present invention is:
referring to fig. 1, a dual-sided display panel includes a pixel structure, where the pixel structure includes more than two pixel units 2 groups 1 with the same structure, and the more than two pixel units 2 groups 1 are distributed in an array;
each pixel unit 2 group 1 comprises three pixel units 2, each pixel unit 2 comprises a TFT device 3 and a main pixel 4, the main pixel 4 of each pixel unit 2 in the same pixel unit 2 group 1 is different and is a B pixel for displaying blue, a G pixel for displaying green and an R pixel for displaying red, and the TFT device 3 is electrically connected to the main pixel 4; because the TFT device 3 and the main pixel 4 are not in the same structural layer, a via hole is formed in the structural layer between the TFT device 3 and the main pixel 4, and the TFT device 3 and the main pixel 4 can be connected through a wire through the via hole; the grid electrode of each TFT device 3 of the same pixel unit 2 group 1 is correspondingly connected with a scanning line, and one scanning line is correspondingly connected with a plurality of TFT devices 3 of different pixel unit 2 groups 1;
referring to fig. 3, the main pixel 4 includes a substrate 401, and a metal anode layer 402, an organic light emitting layer 403, and a metal cathode layer 404 are sequentially stacked on a surface of the substrate 401;
the metal anode layer 402 and the metal cathode layer 404 are both transparent film layers.
The metal anode layer 402 comprises a first transparent film layer, a second transparent film layer and a third transparent film layer are sequentially stacked on the surface of the first transparent film layer, the first transparent film layer and the third transparent film layer are both made of indium tin oxide, the second transparent film layer is made of silver, the thicknesses of the first transparent film layer and the third transparent film layer are both 0.15 μm, and the thickness of the second transparent film layer is 0.15-0.2 μm, preferably 0.175 μm.
The pixel unit 2 further comprises a sub-pixel 5, the sub-pixel 5 is electrically connected with the TFT device 3 and the sub-pixel 5 is configured to display white light; the size of the sub-pixel 5 is the same as the size of the main pixel 4, and the main pixel 4 is different from the sub-pixel 5 in that the respective colors displayed are different.
The TFT device 3 is electrically connected to the main pixel 4 and the sub-pixel 5 through wires, and the wires are made of indium tin oxide.
The metal cathode layer 404 is made of magnesium and silver materials together, and the ratio of magnesium to silver is 1:9, the thickness of the metal cathode layer 404 is 0.15 μm.
In the fabrication of the metal cathode layer 404, two evaporation crucibles containing two materials of magnesium and silver are placed in a crucible device, and magnesium and silver in the evaporation crucibles are respectively plated with magnesium gas and silver gas in a ratio of 1:9 to form the metal cathode layer 404 on the surface of the organic light emitting layer 403.
The light-emitting principle of the double-sided display panel is as follows:
carried by the lowermost substrate 401, holes are injected into the organic light emitting layer 403 through the metal anode layer 402, electrons are simultaneously injected into the organic light emitting layer 403 through the metal cathode layer 404, and the electrons and holes release photons to emit light after recombination in the organic light emitting layer 403.
Referring to fig. 3, because the metal anode layer 402 is opaque, light incident on the surface of the metal anode layer 402 is reflected, and the emitted light is emitted through the metal cathode layer 404 and finally recognized by a human.
Referring to fig. 4, the metal anode layer 402 and the metal cathode layer 404 are both transparent films, and at this time, light can be emitted from both sides of the display panel, and only a very small portion of light of the metal anode layer 402 is reflected, and a very large portion of light is not reflected.
Referring to fig. 2, the second embodiment of the present invention is:
the difference between the second embodiment and the first embodiment is that: the material of the metal anode layer 402 is ito, and the thickness of the metal anode layer 402 is 0.55 μm.
In summary, according to the double-sided display panel provided by the invention, the metal anode layer and the metal cathode layer are arranged to be the transparent film layers, so that light generated by the organic light emitting layer can penetrate through the metal anode layer and the metal cathode layer respectively to be emitted, the double-sided light emitting function of the panel can be realized, and double-sided display of the panel can be realized; the display panel designed by the scheme can improve the brightness and contrast of a panel screen while obviously reducing energy consumption.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent changes made by using the contents of the present specification and the drawings, or applied directly or indirectly to the related technical fields, are included in the scope of the present invention.
Claims (6)
1. The double-sided display panel is characterized by comprising a pixel structure, wherein the pixel structure comprises more than two pixel unit groups with the same structure, and the more than two pixel unit groups are distributed in an array;
each pixel unit group comprises more than two pixel units, each pixel unit comprises a TFT (thin film transistor) device and a main pixel, and the TFT devices are electrically connected with the main pixels;
the main pixel comprises a substrate, wherein a metal anode layer, an organic light emitting layer and a metal cathode layer are sequentially stacked on the surface of the substrate;
the metal anode layer and the metal cathode layer are both transparent film layers.
2. The dual-sided display panel of claim 1, wherein the metal anode layer comprises a first transparent film layer, a second transparent film layer and a third transparent film layer are sequentially stacked on a surface of the first transparent film layer, the first transparent film layer and the third transparent film layer are both made of indium tin oxide, the second transparent film layer is made of silver, the first transparent film layer and the third transparent film layer are both 0.15 μm thick, and the second transparent film layer is 0.15-0.2 μm thick.
3. The dual-sided display panel of claim 1, wherein the metal anode layer is made of ito and has a thickness of 0.55 μm.
4. The dual sided display panel of claim 1, wherein the pixel cell further comprises a sub-pixel electrically connected to the TFT device and configured to display white light.
5. The dual-sided display panel of claim 4, wherein the TFT devices are electrically connected to the main pixels and the sub-pixels respectively through wires, and the wires are made of ITO.
6. The dual sided display panel of claim 1, wherein the metal cathode layer is co-fabricated from magnesium and silver materials and the ratio of magnesium to silver is 1: and 9, the thickness of the metal cathode layer is 0.15 mu m.
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CN110611046B CN110611046B (en) | 2024-04-16 |
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Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004103247A (en) * | 2002-09-04 | 2004-04-02 | Sony Corp | Organic el display device |
US20070114916A1 (en) * | 2005-11-24 | 2007-05-24 | Chan-Ching Chang | Organic electro-luminescent device |
WO2009104148A1 (en) * | 2008-02-22 | 2009-08-27 | Philips Intellectual Property & Standards Gmbh | Double sided organic light emitting diode (oled) |
CN105789239A (en) * | 2014-12-15 | 2016-07-20 | 北京维信诺科技有限公司 | Double-sided light emitting device for OLED display screen and preparation method |
CN106252383A (en) * | 2016-09-30 | 2016-12-21 | 京东方科技集团股份有限公司 | Double face display panel and preparation method thereof, display device |
CN107275502A (en) * | 2017-06-29 | 2017-10-20 | 上海天马有机发光显示技术有限公司 | Organic electroluminescence display panel and display device |
US20170317147A1 (en) * | 2016-04-27 | 2017-11-02 | Chunghwa Picture Tubes, Ltd. | Manufacturing method of pixel structure of organic light-emitting diode display panel |
WO2018227677A1 (en) * | 2017-06-14 | 2018-12-20 | 武汉华星光电半导体显示技术有限公司 | Double-sided display apparatus and preparation method therefor, and electronic device |
CN109585507A (en) * | 2018-11-26 | 2019-04-05 | 武汉华星光电半导体显示技术有限公司 | Display device and its manufacturing method |
CN211062744U (en) * | 2019-08-29 | 2020-07-21 | 福建华佳彩有限公司 | Double-sided display panel |
-
2019
- 2019-08-29 CN CN201910805404.0A patent/CN110611046B/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004103247A (en) * | 2002-09-04 | 2004-04-02 | Sony Corp | Organic el display device |
US20070114916A1 (en) * | 2005-11-24 | 2007-05-24 | Chan-Ching Chang | Organic electro-luminescent device |
WO2009104148A1 (en) * | 2008-02-22 | 2009-08-27 | Philips Intellectual Property & Standards Gmbh | Double sided organic light emitting diode (oled) |
CN105789239A (en) * | 2014-12-15 | 2016-07-20 | 北京维信诺科技有限公司 | Double-sided light emitting device for OLED display screen and preparation method |
US20170317147A1 (en) * | 2016-04-27 | 2017-11-02 | Chunghwa Picture Tubes, Ltd. | Manufacturing method of pixel structure of organic light-emitting diode display panel |
CN106252383A (en) * | 2016-09-30 | 2016-12-21 | 京东方科技集团股份有限公司 | Double face display panel and preparation method thereof, display device |
WO2018227677A1 (en) * | 2017-06-14 | 2018-12-20 | 武汉华星光电半导体显示技术有限公司 | Double-sided display apparatus and preparation method therefor, and electronic device |
CN107275502A (en) * | 2017-06-29 | 2017-10-20 | 上海天马有机发光显示技术有限公司 | Organic electroluminescence display panel and display device |
CN109585507A (en) * | 2018-11-26 | 2019-04-05 | 武汉华星光电半导体显示技术有限公司 | Display device and its manufacturing method |
CN211062744U (en) * | 2019-08-29 | 2020-07-21 | 福建华佳彩有限公司 | Double-sided display panel |
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