CN110611035A - Quantum dot OLED display panel - Google Patents
Quantum dot OLED display panel Download PDFInfo
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- CN110611035A CN110611035A CN201910816773.XA CN201910816773A CN110611035A CN 110611035 A CN110611035 A CN 110611035A CN 201910816773 A CN201910816773 A CN 201910816773A CN 110611035 A CN110611035 A CN 110611035A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
Abstract
The invention discloses a quantum dot OLED display panel, which adopts a red and blue mixed color light source as an OLED light source corresponding to a red sub-color resistance of a color filter and/or adopts a green and blue mixed color light source as an OLED light source corresponding to a green sub-color resistance of the color filter, wherein the blue light source in the mixed color light source can excite a red/green quantum dot material of a quantum dot photoconversion film, the excited light is transmitted out through the color filter, and a red/green light source in the mixed color light source can directly transmit through the color filter, so that the brightness of the quantum dot OLED display panel is improved, the efficiency of the display panel is effectively improved, and the service life of the display panel is prolonged.
Description
Technical Field
The invention relates to the technical field of display, in particular to a quantum dot OLED display panel capable of improving the brightness and prolonging the service life of the display panel.
Background
With the explosion of display technology, high color gamut has become an important development direction. The high color gamut means that the display picture has more colorful colors and stronger color display capability. QD (Quantum Dot ) display technology belongs to the semiconductor nanocrystal technique of innovation, can accurately carry light, and the high-efficient colour gamut value and the visual angle that promotes the display screen let the color purer bright-colored, make the color performance have more tension. The display adopting the technology can generate dynamic colors with wider color gamut range, can display real color plates in image quality, and exceeds the backlight technology in the traditional sense.
The rapid development of the OLED (Organic Light Emitting Diode) display technology has promoted curved surface and flexible display touch products to rapidly enter the market, and the technology update in the related field is also a change day by day. OLED refers to a diode that emits light by carrier injection and recombination under electric field driving using an organic semiconductor material and a light emitting material.
The QD-OLED display panel combines an OLED electroluminescence technology and a quantum dot QD photoluminescence technology, and includes an OLED array substrate emitting blue light, a quantum dot photoconversion film, and a Color Filter (CF for short). The QD-OLED display panel utilizes a blue-light OLED as a light source to excite red/green quantum dots in the quantum-dot photoconversion film, the red quantum dots can excite red light to penetrate through the color filter after receiving the blue light, the green quantum dots can excite green light to penetrate through the color filter after receiving the blue light, and the blue light can directly penetrate through the color filter, so that full-color display is formed. The QD-OLED display panel has excellent properties such as a wide color gamut and a wide viewing angle, and is considered as a potential technology for large-sized OLEDs.
Since the red/green pixel requires the blue OLED to emit red/green light by exciting the quantum dot conversion, and the remaining blue light is filtered out by the color filter, the red/green brightness is limited by the quantum dot light conversion level. Currently, the blue light efficiency is low, which affects the overall brightness of the display panel and reduces the lifetime of the display panel.
Disclosure of Invention
The invention aims to provide a quantum dot OLED display panel, which can effectively improve the brightness of the display panel and prolong the service life of the display panel.
To achieve the above object, the present invention provides a quantum dot OLED display panel, including: the color filter comprises a color resistance layer, the color resistance layer comprises at least one color resistance unit, and the color resistance unit at least comprises a red sub-color resistance and a green sub-color resistance; a quantum dot photoconversion film, wherein the quantum dot photoconversion film is used for preparing a red quantum dot material at a position corresponding to the red sub-color resistor and preparing a green quantum dot material at a position corresponding to the green sub-color resistor; and the OLED light emitting source emitted by the OLED array substrate comprises a blue light source and at least one color mixing light source, the color mixing light source is arranged corresponding to the red sub-color resistor or the green sub-color resistor, and the color mixing light source consists of the blue light source and a light emitting source corresponding to the red sub-color resistor or the green sub-color resistor in color.
The invention has the advantages that: according to the invention, the OLED light emitting source corresponding to the red sub-color resistance of the color filter adopts a red-blue mixed color light source, and/or the OLED light emitting source corresponding to the green sub-color resistance of the color filter adopts a green-blue mixed color light source, the blue light source in the mixed color light source can excite the red/green quantum dot material of the quantum dot photoconversion film, the excited light is transmitted out through the color filter, and the red/green light source in the mixed color light source can directly penetrate through the color filter, so that the brightness of the quantum dot OLED display panel is improved, the efficiency of the display panel is effectively improved, and the service life of the display panel is prolonged.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic diagram of a film structure of a quantum dot OLED display panel according to a first embodiment of the present invention;
FIG. 2 is a schematic diagram of a CF spectrum, a QDPL spectrum and a spectrum of a color-mixed light source corresponding to a red sub-pixel in the quantum dot OLED display panel according to the present invention;
FIG. 3 is a schematic diagram of a film structure of a quantum dot OLED display panel according to a second embodiment of the present invention;
fig. 4 is a schematic diagram of a film structure of a quantum dot OLED display panel according to a third embodiment of the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, which have been repeated for purposes of brevity and clarity and do not in themselves dictate a relationship between the various embodiments and/or arrangements discussed.
The invention relates to a quantum dot OLED display panel, which comprises: the color filter comprises a color resistance layer, the color resistance layer comprises at least one color resistance unit, and the color resistance unit at least comprises a red sub-color resistance and a green sub-color resistance; a quantum dot photoconversion film, wherein the quantum dot photoconversion film is used for preparing a red quantum dot material at a position corresponding to the red sub-color resistor and preparing a green quantum dot material at a position corresponding to the green sub-color resistor; and the OLED light emitting source emitted by the OLED array substrate comprises a blue light source and at least one color mixing light source, the color mixing light source is arranged corresponding to the red sub-color resistor or the green sub-color resistor, and the color mixing light source consists of the blue light source and a light emitting source corresponding to the red sub-color resistor or the green sub-color resistor in color.
In the quantum dot OLED display panel, the OLED light emitting sources corresponding to the red sub-color resistance or the green sub-color resistance of the color filter can both adopt mixed color light sources, or one of the mixed color light sources adopts a mixed color light source. A red and blue mixed color light source (i.e. a purple light source) corresponding to the red sub-color resistance of the color filter, wherein when the red quantum dot material of the quantum dot photoconversion film and the red sub-color resistance of the color filter pass through, a blue light source in the red and blue mixed color light source on one hand can excite the red quantum dot material to emit red light, the excited red light is transmitted through the red sub-color resistance, and a red light source in the red and blue mixed color light source on the other hand can directly transmit the red sub-color resistance; when the green quantum dot material of the quantum dot photoluminescence conversion film and the green sub-color resistance of the color filter pass through the green + blue mixed color light source (namely, the cyan light source), on one hand, the blue light source in the green + blue mixed color light source can excite the green quantum dot material to emit green light, the excited green light can be transmitted out through the green sub-color resistance, and on the other hand, the green light source in the green + blue mixed color light source can directly transmit through the red sub-color resistance; therefore, the brightness of the quantum dot OLED display panel can be improved, the efficiency of the display panel is effectively improved, and the service life of the display panel is prolonged.
In the quantum dot OLED display panel of the present invention, the color-resistance unit may further include a blue sub-color resistance or a blank region, the quantum dot photoconversion film prepares a blue quantum dot material or sets light scattering particles or blanks at a position corresponding to the blue sub-color resistance (or blank region), and the blue light source is set corresponding to the blue sub-color resistance (or blank region). The blue light source corresponding to the blue sub-color resistor (or the blank area) of the color filter can directly penetrate through the blue sub-color resistor (or the blank area), can excite the blue quantum dot material to emit blue light, and the blue light can be transmitted through the blue sub-color resistor (or the blank area), and can further improve the brightness of the quantum dot OLED display panel by penetrating through the blue sub-color resistor (or the blank area) after the light diffusion function is improved through the light scattering particles.
Preferably, on the Quantum Dot OLED display panel, each sub color resistance and a light emitting source corresponding thereto together define a sub-pixel, and a color filter spectrum (CF spectrum for short), a Quantum Dot Photoluminescence spectrum (QDPL spectrum for short) of a corresponding light color corresponding to the same sub-pixel and a spectrum of the OLED light emitting source substantially coincide with each other, so as to improve light transmittance and improve brightness of the display panel. For example, on the quantum dot OLED display panel, each red sub-color resistor and a corresponding red-blue mixed-color light source (or blue light source) define a red sub-pixel, and a CF spectrum (spectrum of the red sub-color resistor), a QDPL spectrum (spectrum of the red quantum dot material) and an OLED light source spectrum (spectrum of the blue light that excites the red quantum dot material, or spectrum of the red-blue mixed-color light source) corresponding to the red sub-pixel are overlapped as much as possible; each green sub-color resistor and a corresponding green-blue mixed-color light source (or blue light source) define a green sub-pixel, and the maximum coincidence of the corresponding CF spectrum (spectrum of the green sub-color resistor), QDPL spectrum (spectrum of the green quantum dot material) and OLED light-emitting source spectrum (spectrum of the blue light for exciting the green quantum dot material or the spectrum of the green-blue mixed-color light source) of the green sub-pixel is ensured as much as possible.
Preferably, the quantum dot photoconversion film is prepared on the color resistance layer by an ink-jet printing mode. By adopting the ink-jet printing mode, the yield of the OLED display panel can be effectively improved, and meanwhile, the production cost is reduced.
Preferably, the OLED array substrate is a top-emission structure, and the OLED array substrate, the quantum dot photoconversion film, and the color filter are sequentially disposed along a light-emitting direction. The OLED array substrate is controlled by a Thin Film Transistor (TFT) array, the TFT array and the metal circuit are arranged on the substrate, light is emitted in a top emission mode, light is emitted from the upper portion of the OLED array substrate, and the light emitting area of the light emitting source cannot be affected by the TFT array and the metal circuit on the substrate. The OLED of the top emission type panel has a lower operating voltage at the same brightness and can obtain a longer lifespan as compared to the bottom emission type panel.
Referring to fig. 1, a film structure of a quantum dot OLED display panel according to a first embodiment of the invention is shown. In this embodiment, the quantum dot OLED display panel includes a color filter 11, a quantum dot photoconversion film 12, and an OLED array substrate 13 sequentially disposed along a direction away from the light-emitting direction.
The color filter 11 includes a glass substrate 110 sequentially disposed along a direction away from the light exit, and a color resistance layer disposed on one side of the glass substrate 110 away from the light exit, where the color resistance layer includes at least one color resistance unit, and the color resistance unit includes a red sub-color resistance 111, a green sub-color resistance 112, and a blank area 113 (indicated by a dashed frame in the figure). Preferably, the red sub-color resistor 111, the green sub-color resistor 112 and the blank region 113 are respectively separated by a Black Matrix (BM) 114. Preferably, the color filter 11 further includes a blocking layer 115 covering the red sub-color resistor 111, the green sub-color resistor 112, the blank area 113 and the black matrix 114, where the blocking layer 115 is used to isolate the color filter 11 from the quantum dot photoconversion film 12, and the spreading property of a printing material is better when the quantum dot material of the quantum dot photoconversion film 12 is printed. In other embodiments, the blank area 113 may be provided with a blue sub-color-block.
The quantum dot photoconversion film 12 prepares a red quantum dot material (QD-R)121 at a position corresponding to the red sub-color resistor 111, prepares a green quantum dot material (QD-G)122 at a position corresponding to the green sub-color resistor 112, and leaves a space at a position corresponding to the blank region 113. The red quantum dot material 121 is prepared on the barrier layer 115 at a position corresponding to the red sub-color resistor 111 by an inkjet printing method, and the green quantum dot material 122 is prepared on the barrier layer 115 at a position corresponding to the green sub-color resistor 112 by an inkjet printing method. By adopting the ink-jet printing mode, the yield of the OLED display panel can be effectively improved, and meanwhile, the production cost is reduced. The spectrum of the quantum dot material can be adjusted by the size of the quantum dot, the red/green quantum dot material may be the same, the quantum dot material includes one or more of CdS, CdSe, ZnCdS, ZnCdSe, InP, etc., or perovskite materials, which is not limited in this invention.
In other embodiments, the quantum dot photoconversion film 12 may also be prepared with blue quantum dot material (QD-B) or disposed with light scattering particles at locations corresponding to the blank regions 113. The light scattering particles may be mixed in the film layer of the quantum dot photoconversion film 12, or may be placed in a resin system outside the quantum dot photoconversion film 12 to improve the light diffusion function. The light scattering particles are made of organic materials or inorganic materials, the dimension of the light scattering particles is nano-scale or micro-scale, and the light scattering particles can be isotropic or anisotropic.
Preferably, the quantum dot photoconversion film 12 includes an organic protective layer 124, and the organic protective layer 124 is used for limiting the film formation area of the red quantum dot material 121 and the green quantum dot material 122. Specifically, the organic protective layer 124 may be made of a transparent or non-transparent resin material. When the organic protection layer 124 is prepared by adopting a non-transparent resin material, the red quantum dot material 121 is limited in a region corresponding to the red sub-color resistor 111, the green quantum dot material 122 is limited in a region corresponding to the green sub-color resistor 112, a space is reserved at a position corresponding to the blank region 113, and the other regions are non-transparent and play a role of light resistance.
The OLED light source emitted by the OLED array substrate 13 includes a blue light source (indicated by letter B in the figure) and a red-blue mixed color light source (indicated by letter R, B in the figure) composed of a red light source and a blue light source, and the red-blue mixed color light source is disposed corresponding to the red sub-color resistor 111 of the color filter 11. The blue light source in the red and blue mixed color light source is used for exciting the red quantum dot material 121 of the quantum dot photoconversion film 12 to emit red light, and the red light is transmitted out through the red sub-color resistor 111; the red light source in the red and blue mixed color light source can directly penetrate through the red sub-color resistor 111, so that the brightness of the display panel is improved.
OLED array substrate 13 is the top emission type structure, includes that it sets gradually along the light-emitting direction: a TFT array substrate 131 with a pixel definition layer 1311, a top-emitting OLED device 132, and a Thin Film Encapsulation (TFE) 133. Wherein, the Thin Film Transistor (TFT) of the TFT array substrate 131 may be an oxide thin film transistor (IGZO TFT) or a low temperature polysilicon thin film transistor (LTPS TFT); the pixel defining layer 1311 is used to define and limit the position where the top-emitting OLED device structure 132 is disposed, and thus the size and position of each sub-pixel. The top-emitting OLED device structure 132 includes a reflective anode, an OLED functional layer, an OLED light-emitting layer, a transparent cathode, and a light extraction layer; the OLED functional layer comprises one or more of a hole injection layer, a hole transport layer, an electron transport layer and an electron injection layer. The top-emitting OLED device structure 132 may comprise one or more stacks of the OLED functional layer and the OLED light-emitting layer. The reflective anode can be made of ITO/Ag/ITO material, and the transparent cathode can be made of IZO, Mg/Ag material and the like. The thin film package 133 is formed by stacking inorganic and organic materials, and at least one layer of inorganic packaging material is manufactured.
Referring to fig. 2, a schematic diagram of a CF spectrum, a QDPL spectrum and a spectrum of a color-mixed light source corresponding to a red sub-pixel in a quantum dot OLED display panel according to the present invention is shown. As can be seen from fig. 2, the CF spectrum (spectrum of red sub-color resistance) 21, the QDPL spectrum (spectrum of red quantum dot material) 22 and the OLED light source spectrum (spectrum of red-blue mixed-color light source) 23 corresponding to the red sub-pixel substantially coincide with each other, so that the light transmittance is improved and the brightness of the display panel is improved.
Referring to fig. 3, a film structure of a quantum dot OLED display panel according to a second embodiment of the invention is shown. The difference from the embodiment shown in fig. 1 is that, in the embodiment, the OLED light emitting source emitted by the OLED array substrate 13B includes a blue light source (indicated by letter B in the figure) and a green-blue mixed color light source (indicated by letter G, B in the figure) of green light and blue light, and the green-blue mixed color light source is disposed corresponding to the green sub-color resistor 112 of the color filter 11. The blue light source in the green-blue mixed color light source is used for exciting the green quantum dot material 122 of the quantum dot photoconversion film 12 to emit green light, and the green light is transmitted through the green sub-color resistor 111; the green light source of the green-blue mixed color light source can directly penetrate through the green sub-color resistor 112, thereby improving the brightness of the display panel. Specifically, the green-blue mixed color light source is formed of a stacked top emitter type structure of green and blue light.
Preferably, the CF spectrum (spectrum of green sub-color resistance), the QDPL spectrum (spectrum of green quantum dot material) and the OLED light source spectrum (spectrum of green-blue mixed-color light source) corresponding to the green sub-pixel ensure maximum coincidence as possible, so as to improve light transmittance and improve brightness of the display panel.
Referring to fig. 4, a film structure of a quantum dot OLED display panel according to a third embodiment of the invention is shown. The difference from the embodiment shown in fig. 1 is that, in the embodiment, the OLED light source emitted by the OLED array substrate 13c includes a blue light source (indicated by a letter B in the figure), a red-blue mixed color light source (indicated by a letter R, B in the figure) composed of a red light source and a blue light source, and a green-blue mixed color light source (indicated by a letter G, B in the figure) of green light and blue light, where the red-blue mixed color light source is disposed corresponding to the red sub-color resistor 111 of the color filter 11, and the green-blue mixed color light source is disposed corresponding to the green sub-color resistor 112 of the color filter 11. The blue light source in the red and blue mixed color light source is used for exciting the red quantum dot material 121 of the quantum dot photoconversion film 12 to emit red light, and the red light is transmitted out through the red sub-color resistor 111; the red light source in the red and blue mixed color light source can directly penetrate through the red sub-color resistor 111; the blue light source in the green-blue mixed color light source is used for exciting the green quantum dot material 122 of the quantum dot photoconversion film 12 to emit green light, and the green light is transmitted through the green sub-color resistor 111; the green light source of the green-blue mixed color light source can directly penetrate through the green sub-color resistor 112, thereby improving the brightness of the display panel. Specifically, the red-blue mixed color light source is formed of a red-and-blue stacked top emitter type structure, and the green-blue mixed color light source is formed of a green-and-blue stacked top emitter type structure.
The difference between the embodiment shown in fig. 1 is that in the present embodiment, a color resistance unit of the color filter 11c includes a red sub-color resistor 111, a green sub-color resistor 112, and a blue sub-color resistor 113 c. The red sub-color resistor 111, the green sub-color resistor 112 and the blue sub-color resistor 113c are separated by a black matrix 114. A blocking layer 115c covers the red sub-color resistor 111, the green sub-color resistor 112, the blue sub-color resistor 113c and the black matrix 114. Accordingly, the quantum dot photoconversion film 12c prepares a blue quantum dot material (QD-B)123c at a position corresponding to the blue sub-color resistance 113 c. In other embodiments, the quantum dot photoconversion film 12c may also be left empty or provided with light scattering particles at positions corresponding to the blue sub-color resists 113 c.
Preferably, the CF spectrum (spectrum of red sub-color resistance), the QDPL spectrum (spectrum of red quantum dot material) and the OLED light source spectrum (spectrum of red-blue mixed-color light source) corresponding to the red sub-pixel are overlapped as much as possible; the CF frequency spectrum (the frequency spectrum of the green sub-color resistance), the QDPL frequency spectrum (the frequency spectrum of the green quantum dot material) and the OLED luminous source frequency spectrum (the frequency spectrum of the green-blue mixed color light source) corresponding to the green sub-pixel are overlapped to the greatest extent possible; the CF spectrum (spectrum of blue sub-color resistance), the QDPL spectrum (spectrum of blue quantum dot material) and the OLED light emitting source spectrum (spectrum of blue light) corresponding to the blue sub-pixel ensure the maximum coincidence as much as possible, so that the light transmission is improved, and the brightness of the display panel is improved.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A quantum dot OLED display panel, comprising:
the color filter comprises a color resistance layer, the color resistance layer comprises at least one color resistance unit, and the color resistance unit at least comprises a red sub-color resistance and a green sub-color resistance;
a quantum dot photoconversion film, wherein the quantum dot photoconversion film is used for preparing a red quantum dot material at a position corresponding to the red sub-color resistor and preparing a green quantum dot material at a position corresponding to the green sub-color resistor; and
the OLED array substrate comprises an OLED luminous source and at least one color mixing light source, wherein the OLED luminous source emitted by the OLED array substrate comprises a blue light source and the at least one color mixing light source, the color mixing light source is arranged corresponding to the red sub-color resistor or the green sub-color resistor, and the color mixing light source consists of the blue light source and a luminous source corresponding to the red sub-color resistor or the green sub-color resistor in color.
2. The quantum dot OLED display panel of claim 1, wherein each sub-color resistor and a light source corresponding thereto together define a sub-pixel on the quantum dot OLED display panel, and a color filter spectrum, a quantum dot photoluminescence spectrum, and an OLED light source spectrum corresponding to the same sub-pixel substantially coincide.
3. The quantum dot OLED display panel of claim 1,
the color mixing light source consists of a red light source and a blue light source and is arranged corresponding to the red sub-color resistor; or
The color mixing light source is composed of a green light source and the blue light source and is arranged corresponding to the green sub-color resistance.
4. The quantum dot OLED display panel of claim 1, wherein the color mixing light source comprises:
a red and blue mixed color light source composed of a red light source and the blue light source, wherein the red and blue mixed color light source is arranged corresponding to the red sub-color resistor; and
and the green-blue mixed color light source is composed of a green light source and the blue light source, and the green-blue mixed color light source is arranged corresponding to the green sub-color resistor.
5. The quantum dot OLED display panel of claim 1, wherein the OLED array substrate is a top-emission type structure, and the OLED array substrate, the quantum dot photoconversion film, and the color filter are sequentially disposed in a light-emitting direction.
6. The quantum dot OLED display panel of claim 1, wherein the quantum dot photoconversion film includes an organic protective layer for confining film-forming regions of the red quantum dot material and the green quantum dot material.
7. The quantum dot OLED display panel of claim 1, wherein the color filter includes a barrier layer covering the color resist layer;
the red quantum dot material is prepared on the blocking layer corresponding to the red sub-color resistance, and the green quantum dot material is prepared on the blocking layer corresponding to the green sub-color resistance.
8. The quantum dot OLED display panel as claimed in claim 7, wherein the red quantum dot material is formed on the barrier layer corresponding to the red sub-color resists by inkjet printing, and the green quantum dot material is formed on the barrier layer corresponding to the green sub-color resists by inkjet printing.
9. The quantum dot OLED display panel as claimed in claim 1, wherein the color resistance unit further comprises a blue sub-color resistance, the quantum dot photoconversion film is provided with blue quantum dot material or light scattering particles or voids at the position corresponding to the blue sub-color resistance, and the blue light source is arranged at the position of the blue sub-color resistance.
10. The quantum dot OLED display panel as claimed in claim 1, wherein the color-resisting unit further comprises a blank region, the quantum dot photoconversion film is provided with blue quantum dot material or light scattering particles or a blank space at the position corresponding to the blank region, and the blue light source is arranged at the position corresponding to the blank region.
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| CN201910816773.XA CN110611035A (en) | 2019-08-30 | 2019-08-30 | Quantum dot OLED display panel |
| PCT/CN2019/116040 WO2021035957A1 (en) | 2019-08-30 | 2019-11-06 | Quantum dot oled display panel |
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| CN111509027A (en) * | 2020-05-29 | 2020-08-07 | 京东方科技集团股份有限公司 | QD display structure and display device |
| CN111628109A (en) * | 2020-06-10 | 2020-09-04 | 京东方科技集团股份有限公司 | Organic electroluminescent display module and display device |
| CN112117296A (en) * | 2020-10-22 | 2020-12-22 | 厦门强力巨彩光电科技有限公司 | LED display panel and LED display device |
| WO2021035943A1 (en) * | 2019-08-30 | 2021-03-04 | 深圳市华星光电半导体显示技术有限公司 | Quantum dot oled display panel |
| CN113488496A (en) * | 2021-06-17 | 2021-10-08 | 深圳市华星光电半导体显示技术有限公司 | Quantum dot color film substrate, preparation method thereof and display device |
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