CN110611006A - 一种二硫化铪薄膜-硅孔阵列异质结、制备方法及其应用 - Google Patents

一种二硫化铪薄膜-硅孔阵列异质结、制备方法及其应用 Download PDF

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CN110611006A
CN110611006A CN201910997372.9A CN201910997372A CN110611006A CN 110611006 A CN110611006 A CN 110611006A CN 201910997372 A CN201910997372 A CN 201910997372A CN 110611006 A CN110611006 A CN 110611006A
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silicon substrate
silicon
hafnium disulfide
disulfide film
heterojunction
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张希威
孟丹
景义林
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Anyang Normal University
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Abstract

本发明公开了一种二硫化铪薄膜‑硅孔阵列异质结、制备方法及其应用。其包括一层表面具有周期性孔阵列结构的单面抛光单晶硅片，单晶硅片上设有一层连续均匀的二硫化铪薄膜。本发明内容所涉及的异质结制备方法包括光刻、反应离子刻蚀以及原子层沉积工艺制备二硫化铪。由于本发明所涉及的异质结是由新型二维半导体二硫化铪与表面具有三维纳米结构的硅衬底结合，不但可以发挥出新型二维材料的优点，还可以达到调控吸光波长、增强光吸收的效果；并且原子层沉积工艺可以使二硫化铪薄膜完全铺满硅衬底表面和孔的侧壁以及孔底，实现全面接触，使得所制备的异质结结区面积大，进而提高光电子器件的光电转换效率。

Description

一种二硫化铪薄膜-硅孔阵列异质结、制备方法及其应用
技术领域：
本发明涉及半导体材料领域，特别是涉及一种二硫化铪薄膜-硅孔阵列异质结、制备方法及其应用。
背景技术：
近些年来，新型二维材料的发展和应用引起了人们极大的关注。二维材料家族阵容庞大，并且它们的性质各有不同。基于二维材料的异质结是由多种具有不同物理特性的二维材料或非二维材料接触所构成。基于二维材料的异质结集成了多种材料的优点，取长补短，克服单一材料的缺陷，甚至会由于材料间独特的耦合机制而发挥出原有材料所不具备的新颖特性，有望能在光电子器件领域获得较大的突破。由于材料结构的特点和制备手段的限制，目前基于二维材料的异质结主要为平面结构，这极大的限制了它们对光的吸收和光电转换效率。在晶硅太阳能电池领域，主要通过硅片表面制备绒面结构来起到表面对光减反作用，如在硅片表面腐蚀出金字塔绒面结构，可以使入射光在金字塔绒面的侧面形成二次反射，使得吸光率大为提高。而在衬底表面制备出具有周期性的孔阵列结构则是一种更为有效的减反措施，更重要的是还可以通过改变孔径和周期去调控光吸收范围。因而，通过将新型二维材料与表面具有周期性孔阵列结构的硅衬底结合构筑具有三维形状的纳米异质结，不但可以发挥出新型二维材料的优点，还可以达到调控吸光波长、增强光吸收的效果。但是，目前的二维材料异质结主要制备方法为干法转移和化学气相沉积等，上述方法难以制备具有三维形状的二维材料纳米异质结。
发明内容：
本发明针对现有技术的不足，提出了一种二硫化铪薄膜-硅孔阵列异质结、制备方法及其应用，旨在克服现有的基于二维材料的异质结在光电子器件应用过程中出现的光吸收不足，光电转换效率较低的问题，拓宽基于二维材料的异质结的结构和种类。
为了实现上述目的，本发明提出了一种二硫化铪薄膜-硅孔阵列异质结、制备方法及其应用，其特征在于：包括一层硅衬底(1)，所述硅衬底(1)上设有二硫化铪薄膜(2)。
作为优选，其特征在于：所述硅衬底(1)为4寸或小于4寸的单面抛光的单晶硅片；硅衬底(1)的厚度为200μm-500μm。
作为优选，其特征在于：所述硅衬底(1)的导电类型为n-型掺杂，掺杂浓度为1015cm-3-1019cm-3。
作为优选，其特征在于：所述硅衬底(1)为抛光面具有孔阵列结构的硅衬底；孔的形状为圆形、正六边形、正方形中的一种或2-3种组合；孔的直径或边长为0.8μm-3μm；孔深为3-10μm；径深比为1∶2-1∶5；孔阵列结构为周期性阵列结构，周期为3-20μm。
作为优选，其特征在于：所述二硫化铪薄膜(2)厚度为1.2nm-240nm；所述二硫化铪薄膜(2)均匀的铺满硅衬底表面和孔的侧壁以及孔底。
作为优选，一种二硫化铪薄膜-硅孔阵列异质结的制备方法，包括如下步骤：
1)将硅衬底浸入BOE溶液，30秒-2分钟后迅速捞出，用去离子水冲洗并用干燥的高纯氮气吹干；
2)将硅衬底表面涂抹光刻胶后放置于光刻机中，通过曝光和显影将周期性的圆形、正六边形、正方形中的一种或2-3中组合形状转移至硅衬底表面；
3)利用反应离子刻蚀工艺刻蚀硅衬底，使之形成周期性的孔阵列结构；
4)将硅衬底放置于丙酮溶液中，使硅衬底表面的光刻胶溶解；
5)利用原子层沉积工艺，在硅衬表面和孔的侧壁以及孔底均匀沉积连续的二硫化铪薄膜。
二硫化铪薄膜-硅孔阵列异质结在光电探测器领域的应用。
二硫化铪薄膜-硅孔阵列异质结在太阳能电池领域的应用。
与现有技术相比，本发明具有以下有益结果：
1.本发明中，利用新型层状二维半导体材料二硫化铪与表面具有周期性孔阵列结构的硅衬底结构构筑具有三维结构的纳米异质结，可以有效的调控光吸收，使得入射光在孔阵列中经过多次反射，提高了吸光率，极大的改善了平面异质结反射率高的缺点，在光电探测器和太阳能电池等应用领域可以有效的提高光电转换效率。
2.本发明中，通过原子层沉积工艺在表面具有周期性孔阵列结构的硅衬底上制备大面积均匀可控的二维二硫化铪薄膜，由于原子层沉积工艺具有保型性的特点，可以使二硫化铪薄膜完全铺满硅衬底表面和孔的侧壁以及孔底，实现全面接触，使得所制备的异质结结区面积大，在光电探测器和太阳能电池等应用领域可以有效的提高光电转换效率。
附图说明：
图1是本发明的剖面结构示意图。
具体实施方式：
实施例1：
参考图1，本发明包含一层硅衬底，所述硅衬底上设有二硫化铪薄膜。本实施例中，硅衬底采用厚度为200μm的4寸单面抛光的单晶硅片，其掺杂浓度为～1015cm-3；硅衬底的抛光面刻有周期性的圆形孔阵列结构，孔径为1μm，孔深为3μm，周期为3μm。本实施例中，二硫化铪薄膜均匀的铺满硅衬底表面和孔的侧壁以及孔底，其厚度为12nm。
本实施例中的异质结制备步骤如下：
1)将硅衬底浸入BOE溶液，30秒后迅速捞出，用去离子水冲洗并用干燥的高纯氮气吹干；
2)将硅衬底表面涂抹光刻胶后放置于光刻机中，通过曝光和显影将周期性的圆形形状转移至硅衬底表面；
3)利用反应离子刻蚀工艺刻蚀硅衬底，使之形成周期性的孔阵列结构；
4)将硅衬底放置于丙酮溶液中，使硅衬底表面的光刻胶溶解；
5)利用原子层沉积工艺，在硅衬表面和孔的侧壁以及孔底均匀沉积连续的二硫化铪薄膜。
本实施例中的二硫化铪薄膜-硅孔阵列异质结用于光电探测器领域。
实施例2：
参考图1，本发明包含一层硅衬底，所述硅衬底上设有二硫化铪薄膜。本实施例中，硅衬底采用厚度为300μm的2寸单面抛光的单晶硅片，其掺杂浓度为～107cm-3；硅衬底的抛光面刻有周期性的圆形孔阵列结构，孔径为2μm，孔深为6μm，周期为5μm。本实施例中，二硫化铪薄膜均匀的铺满硅衬底表面和孔的侧壁以及孔底，其厚度为60nm。
本实施例中的异质结制备步骤如下：
1)将硅衬底浸入BOE溶液，60秒后迅速捞出，用去离子水冲洗并用干燥的高纯氮气吹干；
2)将硅衬底表面涂抹光刻胶后放置于光刻机中，通过曝光和显影将周期性的圆形形状转移至硅衬底表面；
3)利用反应离子刻蚀工艺刻蚀硅衬底，使之形成周期性的孔阵列结构；
4)将硅衬底放置于丙酮溶液中，使硅衬底表面的光刻胶溶解；
5)利用原子层沉积工艺，在硅衬表面和孔的侧壁以及孔底均匀沉积连续的二硫化铪薄膜。
本实施例中的二硫化铪薄膜-硅孔阵列异质结用于太阳能电池领域。
实施例3：
参考图1，本发明包含一层硅衬底，所述硅衬底上设有二硫化铪薄膜。本实施例中，硅衬底采用厚度为400μm的单晶硅片碎片，其掺杂浓度为～1018cm-3；硅衬底的抛光面刻有周期性的圆形孔阵列结构，孔径为3μm，孔深为10μm，周期为8μm。本实施例中，二硫化铪薄膜均匀的铺满硅衬底表面和孔的侧壁以及孔底，其厚度为120nm。
本实施例中的异质结制备步骤如下：
1)将硅衬底浸入BOE溶液，90秒后迅速捞出，用去离子水冲洗并用干燥的高纯氮气吹干；
2)将硅衬底表面涂抹光刻胶后放置于光刻机中，通过曝光和显影将周期性的圆形形状转移至硅衬底表面；
3)利用反应离子刻蚀工艺刻蚀硅衬底，使之形成周期性的孔阵列结构；
4)将硅衬底放置于丙酮溶液中，使硅衬底表面的光刻胶溶解；
5)利用原子层沉积工艺，在硅衬表面和孔的侧壁以及孔底均匀沉积连续的二硫化铪薄膜。
本实施例中的二硫化铪薄膜-硅孔阵列异质结用于光电探测器领域。

Claims (8)

1.一种二硫化铪薄膜-硅孔阵列异质结，其特征在于：包括一层硅衬底(1)，所述硅衬底(1)上设有二硫化铪薄膜(2)。
2.根据权利要求1所述的一种二硫化铪薄膜-硅孔阵列异质结，其特征在于：所述硅衬底(1)为4寸或小于4寸的单面抛光的单晶硅片；硅衬底(1)的厚度为200μm-500μm。
3.根据权利要求1所述的一种二硫化铪薄膜-硅孔阵列异质结，其特征在于：所述硅衬底(1)的导电类型为n-型掺杂，掺杂浓度为1015cm-3-1019cm-3。
4.根据权利要求1所述的一种二硫化铪薄膜-硅孔阵列异质结，其特征在于：所述硅衬底(1)为抛光面具有孔阵列结构的硅衬底；孔的形状为圆形、正六边形、正方形中的一种或2-3种组合；孔的直径或边长为0.8μm-3μm；孔深为3-10μm；径深比为1∶2-1∶5；孔阵列结构为周期性阵列结构，周期为3-20μm。
5.根据权利要求1所述的一种二硫化铪薄膜-硅孔阵列异质结，其特征在于：所述二硫化铪薄膜(2)厚度为1.2nm-240nm；所述二硫化铪薄膜(2)均匀的铺满硅衬底表面和孔的侧壁以及孔底。
6.一种二硫化铪薄膜-硅孔阵列异质结的制备方法，包括如下步骤：
1)将硅衬底浸入BOE溶液，30秒-2分钟后迅速捞出，用去离子水冲洗并用干燥的高纯氮气吹干；
2)将硅衬底表面涂抹光刻胶后放置于光刻机中，通过曝光和显影将周期性的圆形、正六边形、正方形中的一种或2-3中组合形状转移至硅衬底表面；
3)利用反应离子刻蚀工艺刻蚀硅衬底，使之形成周期性的孔阵列结构；
4)将硅衬底放置于丙酮溶液中，使硅衬底表面的光刻胶溶解；
5)利用原子层沉积工艺，在硅衬表面和孔的侧壁以及孔底均匀沉积连续的二硫化铪薄膜。
7.一种权利要求1所述的二硫化铪薄膜-硅孔阵列异质结在光电探测器领域的应用。
8.一种权利要求1所述的二硫化铪薄膜-硅孔阵列异质结在太阳能电池领域的应用。
CN201910997372.9A 2019-10-08 2019-10-08 一种二硫化铪薄膜-硅孔阵列异质结、制备方法及其应用 Pending CN110611006A (zh)

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CN111262133A (zh) * 2020-01-16 2020-06-09 北京理工大学 一种提高单层二维半导体发光亮度的方法
CN111341874A (zh) * 2020-03-09 2020-06-26 合肥工业大学 基于Si微米孔/CuO垂直结构异质结的自驱动宽带光电探测器及其制备方法
CN114551625A (zh) * 2022-02-21 2022-05-27 电子科技大学 一种激光阵列刻蚀ws2晶体的快速响应光导型探测器和制备方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111262133A (zh) * 2020-01-16 2020-06-09 北京理工大学 一种提高单层二维半导体发光亮度的方法
CN111341874A (zh) * 2020-03-09 2020-06-26 合肥工业大学 基于Si微米孔/CuO垂直结构异质结的自驱动宽带光电探测器及其制备方法
CN111341874B (zh) * 2020-03-09 2023-04-07 合肥工业大学 基于Si微米孔/CuO垂直结构异质结的自驱动宽带光电探测器及其制备方法
CN114551625A (zh) * 2022-02-21 2022-05-27 电子科技大学 一种激光阵列刻蚀ws2晶体的快速响应光导型探测器和制备方法

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