CN110600505A - OLED display device - Google Patents
OLED display device Download PDFInfo
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- CN110600505A CN110600505A CN201910766539.0A CN201910766539A CN110600505A CN 110600505 A CN110600505 A CN 110600505A CN 201910766539 A CN201910766539 A CN 201910766539A CN 110600505 A CN110600505 A CN 110600505A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The OLED display device comprises an OLED display panel, wherein the OLED display panel is provided with a display area and a non-display area, a thin film transistor circuit is arranged in the display area, the non-display area comprises a lower frame area, GOA circuits are arranged on two sides of the edge of the lower frame area, and a gate line in the thin film transistor circuit extends to the non-display area from the display area and is electrically connected with the GOA circuits. And an anti-static protective layer is arranged above the gate line at the two sides of the edge of the lower frame area.
Description
Technical Field
The invention relates to the technical field of display, in particular to an OLED display device.
Background
An AMOLED (Active Matrix Organic Light Emitting Diode) display device is gradually becoming a new generation display technology due to its characteristics of high contrast, wide color gamut, low power consumption, and being foldable. Compared with the LCD (Liquid Crystal Display) technology, the AMOLED has a great advantage that it can be applied to a flexible Display panel, and especially, the lower frame of the panel can be bent to the rear of the panel by the so-called panel bending technology, so as to achieve the purpose of reducing the frame. At present, an AMOLED (active matrix organic light emitting diode) antistatic test mainly uses an electrostatic gun to touch and hit 8 points On a display panel, the general problematic point positions of a flexible OLED display screen are positioned On the two side edges of the front side of the display panel close to a lower frame, and a WOA (Wire On Array, Array substrate routing) metal Wire On the outer side of the display panel can be exploded by static electricity to cause that the display panel cannot be lightened.
In summary, in the conventional OLED display device, when the display panel is subjected to the anti-static test, the WOA metal wire located outside the display panel is damaged by static electricity, so that the display panel cannot be lighted, and further the OLED display device is damaged.
Disclosure of Invention
The invention provides an OLED display device, which can prevent WOA metal wires on the outer side of a display panel from being damaged by static electricity, and solves the technical problems that when the display panel is subjected to an anti-static test, the WOA metal wires on the outer side of the display panel can be damaged by static electricity, so that the display panel cannot be lightened, and the OLED display device is further damaged in the conventional OLED display device.
In order to solve the above problems, the technical scheme provided by the invention is as follows:
the invention discloses an OLED display device which is characterized by comprising an OLED display panel, wherein the OLED display panel is provided with a display area and a non-display area, a thin film transistor circuit is arranged in the display area, the non-display area comprises a lower frame area, GOA circuits are arranged on two sides of the edge of the lower frame area, and a gate line in the thin film transistor circuit extends from the display area to the non-display area and is electrically connected with the GOA circuits.
And an anti-static protective layer is arranged above the gate line at the two sides of the edge of the lower frame area.
According to a preferred embodiment of the present invention, the anti-static protective layer is distributed along the direction of the gate lines at two sides of the edge of the lower bezel region.
According to a preferred embodiment of the present invention, the anti-static protection layer is an array structure organic layer, and the array structure organic layer includes a first planarization layer, a second planarization layer, and a pixel defining layer, which are stacked.
According to a preferred embodiment of the present invention, the materials of the first planarizing layer, the second planarizing layer, and the pixel defining layer are all organic resins.
According to a preferred embodiment of the present invention, the anti-static protection layer is a thin film encapsulation inorganic layer, and the thin film encapsulation inorganic layer includes a first inorganic encapsulation layer and a second inorganic encapsulation layer.
According to a preferred embodiment of the present invention, the material of the thin film encapsulation inorganic layer is any one or a combination of more of silicon nitride, silicon oxynitride, silicon oxide, and silicon nitride.
According to a preferred embodiment of the present invention, the OLED display panel includes, in the display region, a flexible substrate, a buffer layer, an active layer, a first gate insulating layer, a first gate line, a second gate insulating layer, a second gate line, an interlayer insulating layer, a first source drain line, a second source drain line, the array structure organic layer, an anode metal layer, and the thin film encapsulation inorganic layer.
According to a preferred embodiment of the present invention, the first source-drain line is electrically connected to the active layer through a first via.
According to a preferred embodiment of the present invention, the OLED display panel includes a flexible substrate, a buffer layer, a first gate insulating layer, a third gate line, a second gate insulating layer, an interlayer insulating layer, and the anti-static protective layer at a portion of the lower bezel region.
According to a preferred embodiment of the present invention, the material of the first gate line, the second gate line and the third gate line is copper.
The invention has the beneficial effects that: according to the OLED display device provided by the invention, the anti-static protective layer is arranged above the partial gate lines positioned at two sides of the edge of the lower frame area of the OLED display panel, so that the electrostatic damage generated in the lower frame area of the OLED display panel during the electrostatic test can be effectively prevented, and the product yield of the OLED display device is improved.
Drawings
In order to illustrate the embodiments or the technical solutions in the prior art more clearly, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the invention, and it is obvious for a person skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic diagram illustrating the area division of an OLED display device according to the present invention.
Fig. 2 is a schematic cross-sectional structure diagram of an OLED display device according to a first embodiment of the invention.
Fig. 3 is a schematic cross-sectional structure diagram of a second embodiment of the OLED display device according to the present invention.
Detailed Description
The following description of the various embodiments refers to the accompanying drawings that illustrate specific embodiments in which the invention may be practiced. The directional terms mentioned in the present invention, such as [ upper ], [ lower ], [ front ], [ rear ], [ left ], [ right ], [ inner ], [ outer ], [ side ], are only referring to the directions of the attached drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention. In the drawings, elements having similar structures are denoted by the same reference numerals.
The invention aims at the technical problems that when an anti-static test is carried out on a display panel of the conventional OLED display device, a WOA metal wire positioned on the outer side of the display panel can be damaged by static electricity, so that the display panel cannot be lightened, and further the OLED display device is damaged.
Fig. 1 is a schematic diagram illustrating the area division of the OLED display device according to the present invention. Wherein, OLED display device includes OLED display panel 10, OLED display panel 10 has display area 11 and non-display area 12, be provided with thin film transistor circuit in the display area 11, non-display area 12 includes lower frame region, the edge both sides of lower frame region are provided with GOA (Gate Driver on Array, Array substrate row drive) circuit 13, Gate line in the thin film transistor circuit by display area 11 extends to non-display area 12, and with GOA circuit 13 electric connection.
Specifically, an anti-static protective layer is arranged above part of the gate line positioned on two sides of the edge of the lower frame area; the anti-static protective layer is distributed along the trend of the gate lines at the two sides of the edge of the lower frame area.
Fig. 2 is a schematic cross-sectional structure diagram of an OLED display device according to a first embodiment of the invention. The OLED display panel includes, in the display region 11, a flexible substrate 201, a buffer layer 202, an active layer 203, a first gate insulating layer 204, a first gate line 2061, a second gate insulating layer 205, a second gate line 2062, an interlayer insulating layer 207, a first source/drain line 2081, a second source/drain line 2082, an array structure organic layer 209, an anode metal layer 2083, and a thin film encapsulation inorganic layer 30.
Specifically, the buffer layer 202 is disposed on the flexible substrate 201; the active layer 203 is disposed on the buffer layer 202; the first gate insulating layer 204 is disposed on the buffer layer 202 and completely covers the active layer 203; the first gate line 2061 is disposed on the first gate insulating layer 204; the second gate insulating layer 205 is disposed on the first gate insulating layer 204 and completely covers the first gate line 2061; the second gate line 2062 is disposed on the second gate insulating layer 205; the interlayer insulating layer 207 is disposed on the second gate insulating layer 205 and completely covers the second gate line 2062; the first source-drain electrode lines 2081 are disposed on the interlayer insulating layer 207 and electrically connected to the active layer 203 through first via holes; the array structure organic layer 209 is disposed on the interlayer insulating layer 207 and completely covers the first source/drain line 2081, and the array structure organic layer 209 includes a first planarizing layer 2091, a second planarizing layer 2092, and a pixel defining layer 2093, which are stacked; the second source-drain line 2082 is disposed on the first planarizing layer 2091, and the second source-drain line 2082 is electrically connected to the first source-drain line 2081 through a second through hole; the second planarizing layer 2092 is disposed on the first planarizing layer 2091 and completely covers the second source-drain lines 2082; the anode metal layer 2083 is disposed on the second planarization layer 2092 and electrically connected to the second source/drain metal line 2082 through a third via; the pixel defining layer 2093 is disposed on the second planarizing layer 2092 and partially covers the anode metal layer 2083.
Specifically, the first planarizing layer 2091, the second planarizing layer 2092, and the pixel defining layer 2093 are all made of an organic resin.
Specifically, the material of the first gate line 2061 and the second gate line 2062 is copper.
Specifically, the thin film encapsulation inorganic layer includes a first inorganic encapsulation layer 301 and a second inorganic encapsulation layer 302, which are stacked, and the first inorganic encapsulation layer 301 completely covers the pixel definition layer 2093 and a portion of the anode metal layer 2083; preferably, the material of the thin film encapsulation inorganic layer is any one or combination of silicon nitride, silicon oxynitride, silicon oxide and silicon nitride.
Specifically, the OLED display panel includes the flexible substrate 201, the buffer layer 202, the first gate insulating layer 204, the third gate line 2063, the second gate insulating layer 205, the interlayer insulating layer 207, and the anti-static protective layer at a portion of the lower bezel region in the non-display region 12. The material of the anti-static protection layer 30 is the same as that of the thin film encapsulation inorganic layer, and the thin film encapsulation inorganic layer is prepared by Chemical Vapor Deposition (CVD). The anti-static protective layer 30 is distributed along the direction of the third gate line 2063 at two sides of the edge of the lower frame region, and the anti-static protective layer 30 is disposed above a portion of the third gate line 2063 at two sides of the edge of the lower frame region. Preferably, the material of the third gate line 2063 is copper metal.
According to the OLED display device, the thin film inorganic packaging layer covers the gate lines at the edges of the two ends of the lower frame region of the non-display region, so that static electricity accumulation can be prevented from being generated on the gate lines at the edges of the two ends of the lower frame region when an OLED display panel is subjected to static electricity test, the accumulated static electricity is prevented from being transmitted to the display region to influence the performance of the display region, and the performance and the product yield of the OLED display device are improved.
Fig. 3 is a schematic cross-sectional view of an OLED display device according to a second embodiment of the invention. The OLED display panel includes, in the display region 11, a flexible substrate 201, a buffer layer 202, an active layer 203, a first gate insulating layer 204, a first gate line 2061, a second gate insulating layer 205, a second gate line 2062, an interlayer insulating layer 207, a first source/drain line 2081, a second source/drain line 2082, an array structure organic layer, an anode metal layer 2083, and a thin film encapsulation inorganic layer.
Specifically, the buffer layer 202 is disposed on the flexible substrate 201; the active layer 203 is disposed on the buffer layer 202; the first gate insulating layer 204 is disposed on the buffer layer 202 and completely covers the active layer 203; the first gate line 2061 is disposed on the first gate insulating layer 204; the second gate insulating layer 205 is disposed on the first gate insulating layer 204 and completely covers the first gate line 2061; the second gate line 2062 is disposed on the second gate insulating layer 205; the interlayer insulating layer 207 is disposed on the second gate insulating layer 205 and completely covers the second gate line 2062; the first source-drain electrode lines 2081 are disposed on the interlayer insulating layer 207 and electrically connected to the active layer 203 through first via holes; the array structure organic layer 209 is disposed on the interlayer insulating layer 207 and completely covers the first source/drain line 2081, and includes a first planarizing layer 401, a second planarizing layer 402, and a pixel defining layer 403, which are stacked; the second source-drain electrode line 2082 is disposed on the first planarization layer 401, and the second source-drain electrode line 2082 is electrically connected to the first source-drain electrode line 2081 through a second through hole; the second planarization layer 402 is disposed on the first planarization layer 401 and completely covers the second source-drain line 2082; the anode metal layer 2083 is disposed on the second planarization layer 402 and electrically connected to the second source/drain metal line 2082 through a third via hole; the pixel defining layer 403 is disposed on the second planarizing layer 402 and partially covers the anode metal layer 2083.
Specifically, the materials of the first planarizing layer 401, the second planarizing layer 402, and the pixel defining layer 403 are all organic resins.
Specifically, the material of the first gate line 2061 and the second gate line 2062 is copper.
Specifically, the thin film encapsulation inorganic layer includes a first inorganic encapsulation layer 301 and a second inorganic encapsulation layer 302, which are stacked, the first inorganic encapsulation layer 301 completely covers the pixel defining layer 403 and a portion of the anode metal layer 2083, and the thin film encapsulation inorganic layer is prepared by Chemical Vapor Deposition (CVD); preferably, the material of the thin film encapsulation inorganic layer is any one or combination of silicon nitride, silicon oxynitride, silicon oxide and silicon nitride.
Specifically, the OLED display panel includes the flexible substrate 201, the buffer layer 202, the first gate insulating layer 204, the third gate line 2063, the second gate insulating layer 205, the interlayer insulating layer 207, and the anti-static protective layer 40 at a portion of the lower bezel region in the non-display region 12. The material of the anti-static protection layer 40 is the same as that of the array structure organic layer, the anti-static protection layer 40 is distributed along the direction of the third gate line 2063 located at two sides of the edge of the lower bezel area, and the anti-static protection layer 40 is disposed above part of the third gate line 2063 located at two sides of the edge of the lower bezel area. Preferably, the material of the third gate line 2063 is copper metal.
According to the second embodiment of the OLED display device, the array structure organic layer covers the gate lines at the edges of the two ends of the lower frame region of the non-display region, so that static electricity accumulation can be prevented from being generated on the gate lines at the edges of the two ends of the lower frame region when the OLED display panel is subjected to static electricity test, the accumulated static electricity is prevented from being transmitted to the display region to influence the performance of the display region, and the performance and the product yield of the OLED display device are improved.
The invention has the beneficial effects that: according to the OLED display device provided by the invention, the anti-static protective layer is arranged above the partial gate lines positioned at two sides of the edge of the lower frame area of the OLED display panel, so that the electrostatic damage generated in the lower frame area of the OLED display panel during the electrostatic test can be effectively prevented, and the product yield of the OLED display device is improved.
In summary, although the present invention has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present invention, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, therefore, the scope of the present invention shall be determined by the appended claims.
Claims (10)
1. The OLED display device is characterized by comprising an OLED display panel, wherein the OLED display panel is provided with a display area and a non-display area, a thin film transistor circuit is arranged in the display area, the non-display area comprises a lower frame area, GOA circuits are arranged on two sides of the edge of the lower frame area, and a gate line in the thin film transistor circuit extends to the non-display area from the display area and is electrically connected with the GOA circuits.
And an anti-static protective layer is arranged above the gate line at the two sides of the edge of the lower frame area.
2. The OLED display device according to claim 1, wherein the anti-static protective layer is distributed along the direction of the gate lines at two sides of the edge of the lower bezel area.
3. The OLED display device according to claim 1, wherein the anti-static protective layer is an array-structured organic layer including a first planarizing layer, a second planarizing layer, and a pixel defining layer, which are stacked.
4. The OLED display device claimed in claim 3, wherein the materials of the first planarizing layer, the second planarizing layer, and the pixel defining layer are all organic resins.
5. The OLED display device according to claim 1, wherein the anti-static protective layer is a thin film encapsulation inorganic layer, and the thin film encapsulation inorganic layer comprises a first inorganic encapsulation layer and a second inorganic encapsulation layer.
6. The OLED display device according to claim 5, wherein the material of the thin film encapsulation inorganic layer is any one or a combination of silicon nitride, silicon oxynitride, silicon oxide and silicon nitride.
7. The OLED display device according to claim 1, wherein the OLED display panel includes, in a portion of the display region, a flexible substrate, a buffer layer, an active layer, a first gate insulating layer, a first gate line, a second gate insulating layer, a second gate line, an interlayer insulating layer, a first source drain line, a second source drain line, the array structure organic layer, an anode metal layer, and the thin film encapsulation inorganic layer.
8. The OLED display device of claim 7, wherein the first source drain line is in electrical communication with the active layer via a first via.
9. The OLED display device according to claim 1, wherein the OLED display panel includes a flexible substrate, a buffer layer, a first gate insulating layer, a third gate line, a second gate insulating layer, an interlayer insulating layer, and the electrostatic protection layer at a portion of the lower bezel region.
10. The OLED display device claimed in claim 9, wherein a material of the first gate line, the second gate line, and the third gate line is copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201910766539.0A CN110600505A (en) | 2019-08-20 | 2019-08-20 | OLED display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910766539.0A CN110600505A (en) | 2019-08-20 | 2019-08-20 | OLED display device |
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| CN110600505A true CN110600505A (en) | 2019-12-20 |
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| CN201910766539.0A Pending CN110600505A (en) | 2019-08-20 | 2019-08-20 | OLED display device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111129094A (en) * | 2019-12-23 | 2020-05-08 | 武汉华星光电半导体显示技术有限公司 | Display panel |
| CN112289808A (en) * | 2020-10-27 | 2021-01-29 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| CN115472656A (en) * | 2022-09-06 | 2022-12-13 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
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