CN110600389A - System and method for detecting photoelectric performance of micro surface-emitting photoelectric chip array in huge amount - Google Patents
System and method for detecting photoelectric performance of micro surface-emitting photoelectric chip array in huge amount Download PDFInfo
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Abstract
The invention discloses a system and a method for detecting the photoelectric performance of a micro surface-emitting photoelectric chip array, wherein the system comprises a transfer driving device, a transfer head, a substrate placing table, a detection circuit substrate, a chip placing table and an optical detector, the substrate placing table, the detection circuit substrate and the chip placing table are sequentially arranged on the same side of the transfer driving device, the transfer head is fixedly arranged on the transfer driving device, and the optical detector is positioned right below the detection circuit substrate. The method comprises the following steps: s1 placing a chip array; s2 negative pressure adsorption chip; s3 detecting the chip in place; s4 photoelectric performance detection; s5 chip transfer release; s6 loops pick and detect. The invention can realize the huge synchronous detection of photoelectric property of the micro surface emitting photoelectric chip group in the huge transfer process, has high detection efficiency, and is suitable for the huge detection of photoelectric property of the micro surface emitting photoelectric chip, such as a micro LED chip or a small LED chip.
Description
Technical Field
The invention relates to the technical field of surface-emitting photoelectric chip detection, in particular to a system and a method for detecting the photoelectric performance of a micro surface-emitting photoelectric chip array.
Background
Surface-emitting photoelectric chips, such as LED chips, have been widely used in the display industry, and as the requirements for image definition have been continuously raised, the size of the chips will tend to be miniaturized. The side length of a traditional display type LED chip is more than 250 micrometers, the size of a future micro LED (MicroLED) chip is in a micron level below 100 micrometers, and great challenges are brought to a performance measurement mode and a chip transfer mode.
At present, the measurement method of the photoelectric parameters of the surface-emitting photoelectric chip mainly comprises:
(1) the electrical properties, such as the relation between the luminous efficiency and the current voltage of the light-emitting diode, the reverse cut-off voltage and the like, are mainly measured by electrical property detection equipment consisting of a probe, a multi-channel current source and a voltmeter;
(2) optical properties such as spectrum, dependence of light intensity on current, etc. are mainly measured by collecting luminescence distribution information through an optical detector (such as a CCD camera).
In the traditional photoelectric parameter measuring process, a positive electrode and a negative electrode of a photoelectric chip are emitted by means of a physical contact surface of a probe to form a complete circuit loop for measurement. In order to improve the measurement speed and efficiency, a multi-probe synchronous measurement technical means is adopted. By adopting the multi-probe technology, although the detection efficiency can be improved to a certain extent, the method also has the following obvious defects:
(1) in the aspect of electrical property detection: as shown in fig. 1, the probe 3 is assumed to be in good electrical contact during measurement, but in actual measurement, due to the influence of the surface flatness of the chip substrate 1, the arrangement position of the surface-emitting optoelectronic chips 2, and the spatial distribution of the structure of the probe 3, a plurality of probes 3 can only be in contact with one row of adjacent surface-emitting optoelectronic chips 2 at the same time, and the large-scale synchronous detection of the surface-emitting optoelectronic chips 2 cannot be realized;
(2) in terms of optical performance detection: as shown in fig. 2, since the plurality of probes 3 can only contact the surface-emitting photoelectric chips 2 at a short distance at the same time, the surface-emitting photoelectric chips 2 have a large emission angle, and the surface-emitting photoelectric chips 2 adjacent to each other interfere with each other when emitting light at the same time, it is not possible to simultaneously measure the optical properties of the plurality of surface-emitting photoelectric chips 2.
Based on the defects, the multi-needle probe technology adopts a discrete measurement mode of parallel measurement of electrical properties and independent measurement of optical properties, so that the production period and the equipment cost are increased sharply. And as the size of the surface-emitting photoelectric chip becomes smaller, the alignment difficulty of the probe and the electrode pin of the chip to be detected also becomes larger; in the future, the substrate of the micro-surface light-emitting electro-optical chip, such as a micro LED chip, is abandoned in the transferring and detecting process and is processed in the form of a light-emitting layer, so that the contact damage of the probe to the micro-surface light-emitting electro-optical chip cannot be ignored.
In summary, for the future product field with huge demand on the number of micro led and miniLED chips, the traditional detection method cannot meet the development demand, and the rapid, batch, economic and reliable surface-emitting photoelectric chip mass transfer and mass detection technology has huge market application.
Therefore, it is desirable to provide a novel system and method for detecting the photoelectric performance of a micro-area-emitting photoelectric chip array in a huge amount to solve the above problems.
Disclosure of Invention
The invention aims to solve the technical problem of providing a huge detection system and a method for photoelectric performance of a micro surface-emitting photoelectric chip array.
In order to solve the technical problems, the invention adopts a technical scheme that: the system comprises a transfer driving device, a transfer head, a substrate placing table, a detection circuit substrate, a chip placing table and an optical detector;
the substrate placing table, the detection circuit substrate and the chip placing table are sequentially arranged on the same side of the transfer driving device;
the transfer head is fixedly arranged at the mobile execution end of the transfer driving device and moves back and forth above the space between the substrate placing table and the chip placing table;
the optical detector is positioned right below the detection circuit substrate and used for collecting optical parameters of the photoelectric chip emitted by the micro surface above the optical detector.
Furthermore, the bottom surface of the transfer head is provided with a plurality of suction and release grooves distributed in a matrix manner, and the center distance between two adjacent suction and release grooves is v (v is more than or equal to 2 and is an integer) times of the center distance between two adjacent surface emitting chips in the same direction;
a plurality of air passages which are mutually independent and correspondingly communicated with each sucking and releasing groove are vertically arranged in the transfer head.
Furthermore, a sealing cover is arranged at the top of the transfer head, and a cavity communicated with the top of each air passage is arranged in the sealing cover;
and the side surface of the sealing cover is provided with an air receiving pipe communicated with the cavity.
Furthermore, the top of the sealing cover is provided with a plurality of micro electromagnetic valves for controlling the communication/separation of each air passage and the cavity.
Furthermore, the outer port of the air receiving pipe is connected with a positive pressure air source through a first air valve and connected with a negative pressure air source through a second air valve.
Furthermore, the contact surface of the adsorption chip of the transfer head is provided with a conductive layer, the top surface of each adsorption groove is provided with a power supply contact for supplying power to an electrode at one end of the top of the surface-emitting photoelectric chip, and each power supply contact is electrically connected with the conductive layer.
Furthermore, the detection circuit substrate is an ITO glass substrate or a flexible transparent circuit board, and a plurality of power supply contacts for supplying power to the electrode at one end of the bottom of the surface-emitting photoelectric chip are distributed on the surface of the detection circuit substrate.
Furthermore, the detection circuit substrate is an ITO glass substrate or a flexible transparent circuit board, and a plurality of power supply contact groups for supplying power to the two electrodes at the bottom of the surface-emitting photoelectric chip are distributed on the surface of the detection circuit substrate.
The invention also provides a detection method based on the detection system for the photoelectric performance of the micro-surface-emitting photoelectric chip array, which mainly comprises the following steps:
s1 placing chip array: placing a chip substrate attached with a surface-to-be-detected light-emitting photoelectric chip array on a substrate placing table, and enabling the surface-to-be-detected light-emitting photoelectric chip to be at a picking position of a detection system;
s2 negative pressure adsorption chip: the transfer head is driven to move above the substrate placing table through the transfer driving device and is driven to approach the substrate placing table, and the chip to be picked up is separated from the chip substrate by the transfer head through negative air pressure and is adsorbed on the transfer head;
s3 chip detection in place: the transfer head is driven to move above the detection circuit substrate through the transfer driving device and is driven to approach the detection circuit substrate, so that the adsorbed surface emits a photoelectric chip to be in contact with the surface of the detection circuit substrate;
and S4 photoelectric performance detection: the power supply contact group arranged on the detection circuit substrate or the pairing combination of the detection circuit substrate and the power supply contact arranged on the transfer head simultaneously supplies power to two electrodes of each surface emitting photoelectric chip, and the electrical performance of each surface emitting photoelectric chip is synchronously tested by using electrical performance testing equipment; meanwhile, recording the optical parameters of each surface of the photoelectric chip emitted by the photoelectric chip through an optical detector positioned below the detection circuit substrate;
s5 chip transfer release: after the detection is finished, the transfer head is driven by the transfer driving device to be away from the detection circuit substrate and move to the position above the chip placing table, and negative air pressure in the transfer head is switched to positive air pressure so that the chip is released onto the chip placing table;
and S6 cycle transfer and detection: the above steps S2 to S5 are repeated to complete the picking up, transferring and inspecting processes of the next group of surface-emitting photoelectric chips until all the chips on the substrate placing table are inspected.
The invention has the following beneficial effects:
1. according to the invention, the transfer head with the air passage in the M-N matrix structure is adopted, and the micro-solenoid valve is used for controlling the switching of negative pressure and positive pressure in the air passage, so that the huge pickup and transfer of the surface emitting photoelectric chip set can be realized, the transfer efficiency is high, and the damage to the surface of the chip in the transfer process is small;
2. according to the invention, the center distance of the suction and discharge grooves on the transfer head is set to be integral multiple of the center distance of the emitting photoelectric chips on the chip substrate, so that the interval selection pickup of the emitting photoelectric chips on the surface can be realized, when a plurality of emitting photoelectric chips on the surface are synchronously electrified and detected, the distance between adjacent chips is larger, the influence of the optical physical quantity of the single emitting photoelectric chip recorded on the optical detector on the light emission of the emitting photoelectric chip on the adjacent surface is greatly inhibited, the detection efficiency is improved, and the accuracy of the detection result is also improved;
3. the invention can realize the random combination of the micro-motion electromagnetic valves by presetting the working state of each micro-motion electromagnetic valve by the two-dimensional matrix point control circuit arranged on the transfer head, meets the picking requirements of different relative positions of each chip in the surface emitting photoelectric chipset, and can greatly promote the rapid positioning and assembly of the qualified surface emitting photoelectric chipset in the application occasion;
4. according to the invention, the conductive layer is arranged at the bottom of the transfer head, the power supply contact is arranged on the top surface of the absorbing and releasing groove, the circuit and the power supply contact are arranged on the surface of the detection circuit substrate, or the power supply contact group for supplying power to two electrodes of the surface-emitting photoelectric chip is arranged on the detection circuit substrate, so that after the surface-emitting photoelectric chip group is transferred to a detection position, the two electrodes of each surface-emitting photoelectric chip are automatically connected with the two power supply contacts in a matched mode, and effective electric contact is ensured by the acting force of the transfer head and the detection circuit substrate on the surface-emitting photoelectric chip, thereby realizing synchronous power supply and synchronous electric performance detection of the surface-emitting photoelectric chip;
5. according to the invention, the detection circuit substrate made of the ITO glass substrate or the flexible transparent circuit board is used as a bearing and power supply end when the surface emitting photoelectric chip is detected, and the optical detector is arranged below the detection circuit substrate, so that the optical parameters of each surface emitting photoelectric chip can be recorded while the electrical performance of the surface emitting photoelectric chip is measured, the detection of the optical performance is completed, the detection efficiency is greatly improved, and meanwhile, the structure of the detection equipment is more compact.
Drawings
FIG. 1 is a schematic diagram of a multi-probe technique for electrical performance detection of a surface-emitting optoelectronic chip;
FIG. 2 is a schematic diagram of a multi-probe technique for optical performance detection of a surface-emitting optoelectronic chip;
FIG. 3 is a schematic perspective view of the detecting device of the present invention;
FIG. 4 is a schematic diagram of a structure of an array of surface-emitting optoelectronic chip chips;
FIG. 5 is a schematic perspective view of the transfer head;
FIG. 6 is a second schematic perspective view of the transfer head;
FIG. 7 is a schematic cross-sectional view of a first embodiment of the transfer head;
FIG. 8 is an enlarged view of portion A of FIG. 7;
FIG. 9 is a schematic cross-sectional view of a second embodiment of the transfer head;
FIG. 10 is a schematic diagram of the power supply of the power source for detecting position according to the present invention;
fig. 11 is a schematic perspective view of the detection circuit substrate;
FIG. 12 is a schematic flow chart of the present invention;
FIG. 13 is a schematic view showing a control mode of the micro solenoid valve;
FIG. 14 is a schematic diagram of a surface-emitting optoelectronic chip array pick-up method according to the present invention.
In the figure: 1 chip substrate, 11 placing groove, 2-surface emitting photoelectric chip, 3 probe, 4 transfer driving device, 5 transfer head, 51 main body, 511 air channel, 52 silicon chip, 521 sucking and releasing groove, 522 anode power supply contact, 523 conductive layer, 524 micro air channel, 53 sealing cover, 54 micro electromagnetic valve, 541 electromagnetic coil, 542 valve body, 543 sealing plug, 55 air connecting pipe, 56 first air valve, 57 second air valve, 6 detection circuit substrate, 61 cathode power supply contact, 7 chip placing table, 8 optical detector, 9 substrate placing table.
Detailed Description
The following detailed description of the preferred embodiments of the present invention, taken in conjunction with the accompanying drawings, will make the advantages and features of the invention easier to understand by those skilled in the art, and thus will clearly and clearly define the scope of the invention.
Referring to fig. 3, a system for detecting a huge amount of photoelectric performance of a micro surface-emitting photoelectric chip array is used for detecting the photoelectric performance of the surface-emitting photoelectric chip array distributed at a certain distance, and includes a transfer driving device 4, a transfer head 5, a substrate placing table 9, a detection circuit substrate 6, a chip placing table 7, and an optical detector 8, wherein the substrate placing table 9, the detection circuit substrate 6, and the chip placing table 7 are sequentially arranged on the same side of the transfer driving device 4, the transfer head 5 is fixedly mounted on a mobile executing end of the transfer driving device 4, and the transfer head 5 moves back and forth between the substrate placing table 1 and the chip placing table 7. The optical detector 8 is arranged right below the detection circuit substrate 6 and used for collecting optical parameters of the micro-surface emission photoelectric chip above the optical detector.
As shown in fig. 3, the transfer driving device 4 adopts a three-coordinate positioning machine of the prior art, the transfer head 5 is mounted on a moving executing member of the transfer driving device 4, the transfer driving device 4 drives the transfer head 5 to realize X, Y, Z movement and positioning in three directions, and the position precision in the movement process in each direction can be ensured through a servo control system.
Preferably, the surface-emitting optoelectronic chips 2 are distributed in a linear array on the surface of the chip substrate 1, as shown in fig. 4. The distance between the centers of the two adjacent faces of the photoelectric chips 2 in the X direction is D1, and the distance between the centers of the two adjacent faces in the Y direction is D2. Further, the center-to-center distances of the surface-emitting photoelectric chips 2 in both the longitudinal and lateral directions of the chip substrate 1 are the same (the error is satisfied that the chip to be picked is located in the pick-up range of each pick-up point of the transfer head 5), that is, D1 is D2, which facilitates the position control of the transfer head 5 for picking up the chip back and forth.
As shown in fig. 5 to 8, the transfer head 5 includes a main body 51, a silicon wafer 52, a sealing cap 53, and a two-dimensional matrix dot control circuit (not shown). In this embodiment, the main body 51 is formed by sintering ceramic, and a plurality of air passages 511, which are independent from each other and have a pore size of 100 to 1000 μm, are formed inside the main body by sintering. The silicon wafer 52 is hermetically embedded in the bottom surface of the main body 51, the bottom surface is provided with suction and discharge grooves 521 distributed in an M x N (M, N is a positive integer) matrix, the interior of the silicon wafer 52 is provided with micro air channels 524 with the caliber smaller than 50 micrometers through an etching process, and the micro air channels 524 are respectively and correspondingly communicated with the air channels 511.
Preferably, the center-to-center distance between two adjacent suction and discharge slots 521 is v (v is greater than or equal to 2 and is an integer) times the center-to-center distance between two adjacent surfaces of the optoelectronic chip 2 in the same direction, that is, the center-to-center distance between two adjacent suction and discharge slots 521 in the X direction is v × D1, and the center-to-center distance in the Y direction is v × D2, where v is 2 in this embodiment. The large enough space can not only meet the requirement of the air passage 511 with large enough aperture (so as to quickly establish air pressure balance), but also ensure that the operation of the transfer head 5 on each chip is not influenced by the adjacent chip when picking up the chip and the subsequent photoelectric detection.
In this embodiment, a sealing cover 53 is hermetically connected to the top of the transfer head 5, and a chamber communicated with the top of each air passage 511 is formed in the sealing cover 53. The sealing cover 53 is provided at the top thereof with micro solenoid valves 54 of the same number as the air passages 511 for controlling the communication/disconnection of each air passage 511 with the chamber. As shown in fig. 7, the inching solenoid valve 54 includes an electromagnetic coil 541 and a valve body 542 located inside the electromagnetic coil 541, the valve body 542 is made of a rod-shaped structure made of a permanent magnetic material, and the bottom end of the valve body 542 penetrates through the sealing cover 53 into the chamber and is fixed with a sealing plug 543. By controlling the direction of the current in the electromagnetic coil 541, the direction of the internal magnetic field can be changed, and the up-and-down position of the valve body 542 can be controlled in a manner that like poles repel and unlike poles attract, so that the sealing plug 53 and the top port of the air passage 511 are in sealing fit and separated.
An inching electromagnetic valve 54 controls the switching of the air channels in an air channel 511, and the inching electromagnetic valve 54 and the air channel 511 form a one-to-one air channel switching control mode. In this mode, the change of the air pressure in the corresponding air passage 511 can be realized by selectively controlling the on-off of the circuits of some micro solenoid valves 54, so that the fixed-point pick-up and release of a certain chip or a plurality of chips by the corresponding suction and release groove 521 can be realized.
An air receiving pipe 55 communicated with the cavity is hermetically embedded in the side surface of the sealing cover 51, and the outer port of the air receiving pipe 55 is connected with a positive pressure air source through a first air valve 56 and connected with a negative pressure air source through a second air valve 57. The first air valve 56 and the second air valve 57 are electromagnetic valves. When the first air valve 56 is in a conducting state and the second air valve 57 is in a closed state, the air pressure in the cavity of the sealing cover 53 is positive and is greater than the normal pressure; when the first air valve 56 is in a closed state and the second air valve 57 is in a conducting state, the air pressure in the cavity of the sealing cover 53 is negative; when both the first gas valve 56 and the second gas valve 57 are in the closed state, the gas pressure in the chamber is at ambient atmospheric pressure.
As a second embodiment of the present invention, a sealing cover 53 is hermetically connected to the top of the transfer head 5, and a chamber communicating with the top of each air passage 511 is formed in the sealing cover 53. The chamber and the air passage 511 form a one-to-many air passage switching control mode, as shown in fig. 9. In this mode, all air channels 511 on the transfer head 5 can simultaneously participate in the chip pick-up/release by controlling the negative/positive pressure in the chamber.
As shown in fig. 10, the bottom surface of the silicon wafer 52 is provided with a conductive layer 523, the bottom surface of each of the suction and discharge grooves 521 is provided with a positive power supply contact 522 for supplying power to the top positive electrode of the surface-emitting photoelectric chip 2, and each of the positive power supply contacts 522 is electrically connected to the conductive layer 523, so that the positive electrodes of all the surface-emitting photoelectric chips 2 are connected in parallel.
As shown in fig. 11, the detection circuit substrate 6 is an ITO glass substrate, and a plurality of negative power supply contacts 61 for supplying power to the bottom negative electrodes of the surface-emitting optoelectronic chips 2 are disposed on the surface of the detection circuit substrate 6, so that the negative electrodes of the surface-emitting optoelectronic chips 2 are connected in parallel, and the positive power supply contacts 522 and the negative power supply contacts 61 are paired one by one to respectively supply power to the two electrodes of the surface-emitting optoelectronic chips 2.
As another embodiment of the present invention, the detection circuit substrate 6 is a flexible transparent circuit board processed by a nanoimprint technology, a plurality of negative power supply contacts for supplying power to negative electrodes of the surface-emitting photoelectric chips 2 are disposed on the surface of the flexible transparent circuit board, and a supporting transparent plate (not shown in the figure) is disposed at the bottom of the flexible transparent circuit board, and the flexible transparent circuit board is flatly laid on the surface of the supporting transparent plate.
Preferably, a plurality of groups of power supply contacts for supplying power to the two electrodes at the bottom of the surface-emitting photoelectric chip 2 are distributed on the surface of the detection circuit substrate 6, the surface-emitting photoelectric chip 2 is independently supplied with power through the detection circuit substrate 6, a conductive layer and the power supply contacts do not need to be arranged on the transfer head 5, and the structure and the processing technology of the transfer head 5 are simplified.
Referring to fig. 12, the method for detecting the optoelectronic performance of the surface-emitting optoelectronic chip array using the system for detecting the optoelectronic performance of the surface-emitting optoelectronic chip array comprises the following steps:
s1 placing chip array: placing the chip substrate 1 attached with the surface-emitting photoelectric chip array to be detected on a substrate placing table 9, and enabling the surface-emitting photoelectric chip to be at a picking position of a detection system;
preferably, the top surface of the substrate placing table 9 is provided with a positioning protrusion/positioning groove for placing the chip substrate 1, and the edge of the chip substrate 1 is provided with a positioning groove/positioning protrusion matched with the positioning protrusion/positioning groove, so that the chip substrate 1 can be quickly and accurately placed on the substrate placing table 9. Further, the substrate placing table 9 is a rotary table, and the position of the chip substrate 1 placed on the substrate placing table 9 can be adjusted by individually controlling the rotation of the rotary table in the horizontal plane, so that the arrangement direction of the chip array is consistent with the array direction/array parallelism of the suction and discharge grooves 521 on the transfer head 5.
S2 negative pressure adsorption chip: driving the transfer head 5 to move above the chip array through the transfer driving device 4, driving the transfer head 5 to be close to the substrate placing table 9, and enabling part of the chips to be separated from the chip substrate 1 through negative air pressure and to be adsorbed on the transfer head 5;
in this embodiment, a "one-to-one" air path switching control mode between the micro-motion solenoid valve 54 and the air path 511 is adopted, a circuit control mode of the micro-motion solenoid valve 54 is as shown in fig. 13 (taking 2 × 3 rectangular array distribution as an example), a two-dimensional matrix point control circuit (such as a RAM memory chip) is adopted to realize control of the working state of each micro-motion solenoid valve 54, the two-dimensional matrix point control circuit is connected with a serial port of a computer, and the on-off state of the circuit on a two-dimensional matrix point is set and controlled through a program interface on the computer, that is, the micro-motion solenoid valve 54 realizes the up-and-down position of the corresponding valve body 542 through the direction of current in the corresponding electromagnetic coil 541 on the two-dimensional matrix point (such as a1b1, a1b2, a1b3, a2b1, a2b2, and a2b3 shown in the figure), so as to realize the sealing fit.
When the transfer head 5 moves to the grasping position (about 10 microns from the top surface of the chip), the first air valve 56 is turned on and the second air valve 57 is closed, so that the chamber in the sealing cover 53 is communicated with the negative pressure air source. The electromagnetic coil 541 corresponding to the pick-up point is positively electrified through a two-dimensional matrix point control circuit, the valve body 542 in the electromagnetic coil is upwards attracted by the magnetic field force of the electromagnetic coil, the sealing plug 543 on the corresponding point is separated from the port of the air passage 511, so that the air passage 511 on the corresponding point is communicated with the negative pressure chamber, air flow from bottom to top is formed in the air passage 511, and a chip on the chip substrate 1 can be adsorbed into the suction and release groove 521; the electromagnetic coils 541 on the other points are reversely electrified, the magnetic field force pushes the valve body 542 in the electromagnetic coils downwards, and the sealing plug 543 on the corresponding point is in sealing fit with the port of the air passage 511, so that the air passage 511 on the corresponding point is isolated from the negative pressure chamber, the air passage 511 is at the normal pressure and does not generate adsorption force on the chip.
By adopting a two-dimensional matrix point control mode, the random combination of a plurality of micro electromagnetic valves 54 can be realized, the use requirements of different picking points are met, and especially, when the micro surface emitting photoelectric chips such as micro LEDs and miniLEDs are automatically assembled on equipment such as a display screen, the work efficiency can be obviously improved.
In this embodiment, the pickup manner of the chip array is as shown in fig. 14. The pick-up and transfer process of the transfer head 5 will be described by taking as an example that the placement grooves 11 are distributed in a 6 × 6 rectangular array, the suction and discharge grooves 521 are distributed in a 3 × 3 rectangular array, and the pitch of the centers of the suction and discharge grooves 521 is 2 times the pitch in the placement grooves 11. For convenience of description, the surface emitting photoelectric chips 2 are labeled with "@", "#", "×" and "&" characters, respectively.
9 micro solenoid valves 54 work simultaneously, so that 9 air passages 511 in the transfer head 5 are simultaneously communicated with a negative pressure air source, and the rest air passages 511 keep normal pressure. When the transfer head 5 is located directly above and gradually approaches the chip array, the face located directly below the air passage 511 emits the photoelectric chip 2, the face indicated by the "@" character as a whole as shown in fig. 14 emits the photoelectric chip 2, is detached from the chip substrate 1 under the action of the negative pressure air field and is adsorbed in the suction and discharge groove 521 on the bottom surface of the silicon wafer 52. The 9 picked-up surface emitting photoelectric chips 2 are transferred to the detection position for synchronous detection, and then synchronously transferred to the release position for release after detection is finished, and then the transfer driving device 4 drives the transfer head 5 to move back to the pickup position, and simultaneously picks up the 9 surface emitting photoelectric chips 2 marked with the "#" characters and the rest chips at the pickup position of the chip array in the same way. The distance deviation of the transfer head 5 at each round trip end position is equal to the center-to-center distance of the adjacent surface emitting photoelectric chips 2.
S3: chip detection in place: driving the transfer head 5 to move above the detection circuit substrate 6 with the circuit arranged and to be close to the detection circuit substrate 6 by the transfer driving device 4, so that the chip array is in contact with the surface of the detection circuit substrate 6;
as shown in fig. 11, after the surface-emitting photoelectric chip 2 is in place at the detection position, the positive electrode on the top of the surface-emitting photoelectric chip 2 is in reliable contact with the positive power supply contact 522 in the suction/discharge groove 521 under the action of the negative pressure suction force, and the negative electrode on the bottom of the surface-emitting photoelectric chip 2 is in reliable contact with the negative power supply contact 61 on the detection circuit substrate 6 under the action of the reverse pressure of the detection circuit substrate 6.
S4: and (3) detecting the photoelectric property: the method comprises the following steps of detecting electrical properties and optical properties:
s4.1, detecting electrical properties: the power supply contacts arranged on the transfer head 5 and the detection circuit substrate 6 are used for simultaneously supplying power to the two electrodes of each surface of the emission photoelectric chip 2, and the electrical performance of each surface of the emission photoelectric chip 2 is synchronously tested by using electrical performance testing equipment;
because the positive power supply contact 522 on the transfer head 5 is connected in parallel, the negative power supply contact 61 on the detection circuit substrate 6 is also connected in parallel, the detection voltage/current with the same parameter value can be simultaneously supplied to all the emission photoelectric chips 2 on the surfaces to be detected through the positive power supply contact 522 and the negative power supply contact 61, so that the electrical properties of the emission photoelectric chips 2 on all the surfaces can be synchronously detected, a plurality of collected test results can be simultaneously analyzed through the electrical property testing equipment in the prior art, and the detection efficiency is greatly improved.
S4.2, detecting optical performance: while detecting the electrical performance, recording the optical parameters of each surface of the photoelectric chip 2 emitted by the optical detector 8 positioned below the detection circuit substrate 6;
in this embodiment, the optical detector 8 adopts a micro spectrometer (built-in CCD detector) with a side length of 10mm, and is placed below the detection circuit substrate 6, and the imaging range of the optical detector is larger than the maximum range of light and shadow when the detection circuit substrate 6 emits the optoelectronic chips 2 on each surface, so that the optical detector 8 can completely capture the optical parameters of the optoelectronic chips 2 emitted from all surfaces. When the surface-emitting photoelectric chip 2 is electrified to detect the optical performance, the surface-emitting photoelectric chip emits light correspondingly, so that the optical performance can be detected simultaneously, the corresponding optical performance under different detection voltage/current conditions is compared with the qualified standard parameter threshold value for analysis, and the detection efficiency is greatly improved.
S5 chip transfer release: after the detection is finished, the transfer head 5 is driven by the transfer driving device 4 to be far away from the detection circuit substrate 6 and move to the upper part of the chip placing table 7, and the negative air pressure in the transfer head 5 is switched to positive air pressure, so that the chip is released onto the chip placing table 7;
by providing a travel switch (not shown in the figure) for monitoring that the transfer head 5 reaches the release position on the transfer driving device 4, when the chip detection on the transfer head 5 is completed, the transfer driving device 4 drives the transfer head 5 to be lifted and moved above the chip release position, and then drives the transfer head 5 to be moved and close to the chip placing table 7 (about 10 μm from the top surface of the chip placing table 7). At this time, the travel switch is triggered, the first air valve 56 is closed and the second air valve 57 is conducted through a control program of the system, so that the chamber in the sealing cover 53 is disconnected from the negative pressure air source and communicated with the positive pressure air source, and each sealing plug 543 is kept separated from the port of the air passage 511, so that air flow from top to bottom is formed in the air passage 511, and the chip in the pick-up point suction and discharge groove 521 is "blown off" from the suction and discharge groove 521 and falls on the chip placing table 7. In addition, the chip placement stage 7 may be a terminal substrate for assembling chips, and the chips are directly and accurately positioned on the terminal substrate in an assembling posture after going up and down from the suction and release groove 521, which facilitates the rapid assembly of the chips.
Preferably, a qualified standard parameter threshold of the photoelectric property of the surface-emitting photoelectric cell chip is preset in a data analysis system of the detection device, a chip placing table composed of a transfer substrate and a terminal substrate is arranged, and a first travel switch corresponding to the chip release position on the terminal base station and a second travel switch corresponding to the chip release position on the transfer base station are respectively arranged on the transfer driving device 4.
After the chip is detected, the actual parameter values detected at the detection points in steps S4 and S5 are automatically compared with the standard parameter threshold, and the comparison results are subjected to array coding by pass (coding is recorded as "1") and fail (coding is recorded as "0"), and are automatically matched with the control circuit of the two-dimensional matrix point of the micro solenoid valve 54.
After the transfer head 5 moves to the upper part of the transfer substrate, the first travel switch is triggered to act, so that the transfer head 5 stays at the release position of the transfer substrate. At this time, the electromagnetic coil 541 corresponding to the two-dimensional matrix point coded as "1" is energized in the opposite direction, and the magnetic field force pushes the valve body 542 therein downward, so that the sealing plug 543 corresponding to the point is in sealing fit with the port of the air passage 511, thereby keeping the air passage 511 corresponding to the point at the negative pressure of the adsorption state; then, the first air valve 56 is closed, the second air valve 57 is conducted, so that the chamber in the sealing cover 53 is disconnected from the negative pressure air source and is communicated with the positive pressure air source, and since the sealing plug 543 on the pick-up point coded as "0" is kept separated from the port of the air passage 511, an air flow from top to bottom is formed in the air passage 511, so that the chip in the pick-up point suction and release groove 521 is "blown off" from the suction and release groove 521 and falls on the transfer substrate.
The transfer head 5 continues to move to the upper side of the terminal substrate, the electromagnetic coil 541 corresponding to the two-dimensional matrix point coded as "1" is energized in the forward direction again, the magnetic field force attracts the valve body 542 in the electromagnetic coil upwards, the sealing plug 543 corresponding to the point is separated from the port of the air passage 511 again, the air passage 511 is communicated with the positive pressure chamber, an air flow from top to bottom is formed, and the chip in the pick-up point suction and release groove 521 is blown away from the suction and release groove 521 and falls on the terminal substrate. So, can accomplish the separation of certified products and defective work in the testing process, need not the manual work and carry out the quality screening through testing result face-to-face transmission photoelectric chip, greatly promoted production efficiency.
S6 loop pick-up and detection: after the chips are completely released, the above steps S2 to S5 are repeated to complete the picking up, transferring and inspecting processes of the next set of surface-emitting optoelectronic chip arrays until all the chips on the substrate placing table 9 are inspected.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes performed by the present specification and drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (9)
1. A huge detection system of photoelectric performance of a micro surface-emitting photoelectric chip array is used for detecting the photoelectric performance of the surface-emitting photoelectric chip array distributed at a certain interval, and is characterized in that: comprises a transfer driving device (4), a transfer head (5), a substrate placing table (9), a detection circuit substrate (6), a chip placing table (7) and an optical detector (8);
the substrate placing table (9), the detection circuit substrate (6) and the chip placing table (7) are sequentially arranged on the same side of the transfer driving device (4);
the transfer head (5) is fixedly arranged at the moving execution end of the transfer driving device (4) and moves back and forth above the space between the substrate placing table (9) and the chip placing table (7);
the optical detector (8) is positioned right below the detection circuit substrate (6) and is used for collecting optical parameters of the micro surface-emitting photoelectric chip (2) above the optical detector.
2. The system of claim 1, wherein the optoelectronic performance macro-inspection system comprises: the bottom surface of the transfer head (5) is provided with a plurality of suction and release grooves (521) distributed in a matrix manner, and the center distance between two adjacent suction and release grooves (521) is v (v is more than or equal to 2 and is an integer) times of the center distance between two adjacent surface emitting chips in the same direction;
a plurality of air passages (511) which are mutually independent and correspondingly communicated with each suction and release groove (11) are vertically arranged in the transfer head (5).
3. The system of claim 2, wherein the optoelectronic performance macro-inspection system comprises: the top of the transfer head (5) is provided with a sealing cover (53), and a cavity communicated with the top of each air passage (511) is arranged in the sealing cover (53);
and an air receiving pipe (55) communicated with the cavity is arranged on the side surface of the sealing cover (51).
4. The system of claim 3, wherein the optoelectronic performance macro-inspection system comprises: the top of the sealing cover (53) is provided with a plurality of micro electromagnetic valves (54) for controlling the communication/isolation of each air passage (511) and the chamber.
5. The system of claim 3, wherein the optoelectronic performance macro-inspection system comprises: the outer port of the air receiving pipe (55) is connected with a positive pressure air source through a first air valve (56) and connected with a negative pressure air source through a second air valve (57).
6. The system of claim 2, wherein the optoelectronic performance macro-inspection system comprises: the contact surface of the adsorption chip of the transfer head (5) is provided with a conductive layer (523), the top surface of each adsorption groove (521) is provided with a power supply contact for supplying power to an electrode at one end of the top of the surface-emitting photoelectric chip, and each power supply contact is electrically connected with the conductive layer (523).
7. The system according to claim 1 or 6, wherein the optoelectronic performance bulk detection system comprises: the detection circuit substrate (6) is an ITO glass substrate or a flexible transparent circuit board, and a plurality of power supply contacts for supplying power to an electrode at one end of the bottom of the surface-emitting photoelectric chip are distributed on the surface of the detection circuit substrate (6).
8. The system of claim 1, wherein the optoelectronic performance macro-inspection system comprises: the detection circuit substrate (6) is an ITO glass substrate or a flexible transparent circuit board, and a plurality of power supply contact groups for supplying power to two electrodes at the bottom of the surface-emitting photoelectric chip are distributed on the surface of the detection circuit substrate.
9. The detection method based on the micro-surface-emitting photoelectric chip array photoelectric performance detection system mainly comprises the following steps:
s1 placing chip array: placing a chip substrate (1) attached with a surface-emitting photoelectric chip array to be detected on a substrate placing table (9) to enable the surface-emitting photoelectric chip to be positioned at a picking-up position of a detection system;
s2 negative pressure adsorption chip: the transfer head (5) is driven to move above the substrate placing table (9) through the transfer driving device (4), the transfer head (5) is driven to be close to the substrate placing table (9), and the chip to be picked up is separated from the chip substrate (1) by the transfer head (5) through negative air pressure and is adsorbed on the transfer head (5);
s3 chip detection in place: the transfer head (5) is driven to move above the detection circuit substrate (6) through the transfer driving device (4), and the transfer head (5) is driven to be close to the detection circuit substrate (6), so that the absorbed surface emits the photoelectric chip (2) to be in contact with the surface of the detection circuit substrate (6);
and S4 photoelectric performance detection: through detecting a power supply contact group arranged on a circuit substrate (6) or the matching combination of the power supply contacts arranged on the circuit substrate (6) and a transfer head (5), two electrodes of each surface emitting photoelectric chips are powered simultaneously, and electrical performance testing equipment is used for synchronously testing the electrical performance of each surface emitting photoelectric chips; meanwhile, optical parameters of the photoelectric chip emitted by each surface are recorded through an optical detector (8) positioned below the detection circuit substrate (6);
s5 chip transfer release: after the detection is finished, the transfer head (5) is driven by the transfer driving device (4) to be away from the detection circuit substrate (6) and move to the position above the chip placing table (7), and negative air pressure in the transfer head (5) is switched to positive air pressure, so that the chip is released onto the chip placing table (7);
and S6 cycle transfer and detection: repeating the above steps S2 to S5, the picking up, transferring and detecting process of the next group of surface-emitting photoelectric chips is completed until all the chips on the substrate placing table (9) are detected.
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