CN110592526A - Mask structure for metal evaporation - Google Patents
Mask structure for metal evaporation Download PDFInfo
- Publication number
- CN110592526A CN110592526A CN201810602412.0A CN201810602412A CN110592526A CN 110592526 A CN110592526 A CN 110592526A CN 201810602412 A CN201810602412 A CN 201810602412A CN 110592526 A CN110592526 A CN 110592526A
- Authority
- CN
- China
- Prior art keywords
- pattern
- welding
- mask
- conductive layer
- metal evaporation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
The invention provides a metal evaporation mask structure, which is provided with a pattern part with an opening structure, a welding part on the side of the pattern part and used for welding to a frame, and a connecting part between the pattern part and the welding part, wherein the thickness of the pattern part is smaller than that of the welding part, the thicknesses of two sides of the connecting part are respectively equal to that of the pattern part and the welding part, the thickness of the connecting part is gradually reduced from the welding part to the pattern part, and the mask has various areas with different thicknesses, so that the problem of breakage is avoided when the mask is stretched and positioned.
Description
Technical Field
The present invention relates to a mask structure for metal evaporation, and more particularly to a mask structure with different thicknesses for preventing fracture during bracing and positioning.
Background
Referring to fig. 1 and 2, a typical metal evaporation mask a is made of a thin metal material as a base material, and has a pattern portion a1 and a soldering portion a2 disposed at two ends of the pattern portion a1, because the thickness of the high-resolution metal evaporation mask a is usually less than 20um, and the thickness of the soldering portion a2 needs to be 20um when it is soldered to a metal frame, a thickened portion A3 must be disposed on the soldering portion a2 to satisfy this condition, but this method has the following disadvantages:
when the metal vapor deposition mask A is precisely tensioned and positioned on the metal frame, the stress is concentrated on the connection between the pattern portion A1 and the soldering portion A2, which is very likely to cause breakage.
When the metal evaporation mask A is manufactured, at least two processes are required to complete the manufacturing, so that the manufacturing difficulty is increased, and the production yield is reduced.
Disclosure of Invention
The main objective of the present invention is to provide a mask having various regions with different thicknesses, so that the mask will not break when being tensioned and positioned.
The secondary objective of the present invention is to integrally grow a mask with various thicknesses by using electroforming equipment, thereby facilitating production and improving yield.
The invention provides a metal vapor deposition mask structure, which comprises a pattern part with an opening structure, a welding part on the side of the pattern part for welding to a frame, and a connecting part between the pattern part and the welding part, wherein the thickness of the pattern part is smaller than that of the welding part, the thicknesses of two sides of the connecting part are respectively equal to those of the pattern part and the welding part, and the thickness of the connecting part is gradually reduced from the welding part to the pattern part.
In the foregoing metal vapor deposition mask structure, the pattern portion, the welding portion and the connecting portion of the mask are integrally formed by electroforming equipment.
In an embodiment of the present invention, the electroforming apparatus includes an anode substrate and a cathode set, the cathode set includes a non-conductive substrate and a conductive layer with conductive property disposed on a surface of the substrate, and the metal is deposited on the surface of the conductive layer using the conductive layer as a background to form the pattern portion, the welding portion and the connecting portion of the mask.
In the foregoing metal vapor deposition mask structure, the conductive layer of the electroforming apparatus has more than one region with different impedances, so that the pattern portion, the soldering portion and the connecting portion of the mask have different thicknesses.
In the foregoing metal vapor deposition mask structure, the anode substrate of the electroforming apparatus is provided in plural, so that areas with different electric field intensities are generated between the anode substrate and the conductive layer, and the pattern portion, the welding portion and the connecting portion of the mask have different thicknesses.
Rely on above-mentioned structure, when the shade bracing and with the welding part welding position in the frame, be the convergent form towards figure portion by the welding part because of the thickness of connecting portion, because the thickness variation of connecting portion is progressive, make not have obvious thickness boundary position between figure portion and the welding part, the produced stress of dispersion shade when bracing the location, and then can avoid the production of fracture mao line among the prior art, effectively improve the cracked problem of shade bracing, and can reduce the pulling force transmission variation to minimum, the depth of parallelism when increasing the shade bracing.
Drawings
Fig. 1 is a top view of a conventional mask.
Fig. 2 is a cross-sectional view of a conventional mask.
FIG. 3 is a schematic view of a mask of the present invention.
FIG. 4 is a schematic view of a first electroforming method according to the present invention.
FIG. 5 is a schematic view of a second electroforming method according to the present invention.
Description of reference numerals: 10-a mask; 11-a graphics portion; 12-a weld; 13-a connecting part; 20-electroforming equipment; 21-21' -anode substrate; 22-cathode set; 221-a substrate; 222-conductive layer.
Detailed Description
Referring to fig. 3, it can be clearly seen that the mask 10 of the present invention is provided with a pattern portion 11 having an opening structure, a welding portion 12 at a side of the pattern portion 11 for welding to a frame, and a connecting portion 13 between the pattern portion 11 and the welding portion 12, wherein:
the thickness of the pattern part 11 is smaller than that of the welded part 12.
The thickness of the connecting portion 13 is equal to the thickness of the pattern portion 11 and the thickness of the welding portion 12, and the thickness of the connecting portion 13 is gradually reduced from the welding portion 12 to the pattern portion 11.
By virtue of the structure, when the shade 10 is braced and the welding part 12 is welded and positioned on the frame, because the thickness of the connecting part 13 is gradually reduced from the welding part 12 to the pattern part 11, because the thickness change of the connecting part 13 is gradual, no obvious thickness boundary position exists between the pattern part 11 and the welding part 12, the stress generated when the shade 10 is braced and positioned is dispersed, and then the generation of broken edge lines in the prior art can be avoided, the problem of breakage of the shade 10 in bracing is effectively improved, and the variation of tension transmission can be reduced to the minimum, and the parallelism of the shade 10 in bracing is increased.
Referring to fig. 4, it is clearly seen that the mask 10 of the present invention is made by using an electroforming apparatus 20, the electroforming apparatus 20 has an anode substrate 21 and a cathode set 22, the cathode set 22 has a non-conductive substrate 221 and a conductive layer 222 with conductive property disposed on the surface of the substrate 221, and metal is deposited on the surface of the conductive layer 222 with the conductive layer 222 as a background to integrally form the pattern portion 11, the soldering portion 12 and the connecting portion 13 of the mask 10. The conductive layer 222 has more than one area with different impedance, and the ratio of current passing through each area of the conductive layer 222 is controlled to generate different thicknesses of the pattern portion 11, the soldering portion 12 and the connecting portion 13 of the mask 10. Furthermore, the impedance of each region of the conductive layer 222 can be varied by matching the material, thickness or shape.
As shown in fig. 5, it can be clearly seen that the anode substrate 21 'of the electroforming apparatus 20 is provided in plural numbers, so that areas with different electric field intensities are generated between the anode substrate 21' and the conductive layer 222, and the pattern portion 11, the soldering portion 12 and the connecting portion 13 have different thicknesses when the mask 10 is formed.
Claims (5)
1. The utility model provides a metal evaporation mask structure, this shade is provided with the figure portion that has opening structure, figure portion side for weld in the welding part of frame and the connecting portion between figure portion and the welding part, its characterized in that:
the thickness of the pattern part is smaller than that of the welding part, the thicknesses of the two sides of the connecting part are respectively equal to those of the pattern part and the welding part, and the thickness of the connecting part is gradually reduced from the welding part to the pattern part.
2. The metal evaporation mask structure of claim 1, wherein: the pattern portion, the soldering portion and the connecting portion of the mask are formed by integrally growing by electroforming equipment.
3. The metal evaporation mask structure of claim 2, wherein: the electroforming equipment is provided with an anode substrate and a cathode group, wherein the cathode group is provided with a non-conductive substrate and a conductive layer with conductive property arranged on the surface of the substrate, and metal is deposited on the surface of the conductive layer by taking the conductive layer as a background to form a pattern part, a welding part and a connecting part of a mask.
4. The metal evaporation mask structure of claim 3, wherein: the conductive layer of the electroforming equipment has more than one area with different resistances, so that the pattern part, the welding part and the connecting part of the mask have different thicknesses.
5. The metal evaporation mask structure of claim 3, wherein: the anode substrate of the electroforming equipment is provided with a plurality of areas, so that areas with different electric field intensities are generated between the anode substrate and the conductive layer, and the pattern part, the welding part and the connecting part of the mask have different thicknesses.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810602412.0A CN110592526A (en) | 2018-06-12 | 2018-06-12 | Mask structure for metal evaporation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810602412.0A CN110592526A (en) | 2018-06-12 | 2018-06-12 | Mask structure for metal evaporation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110592526A true CN110592526A (en) | 2019-12-20 |
Family
ID=68848877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810602412.0A Pending CN110592526A (en) | 2018-06-12 | 2018-06-12 | Mask structure for metal evaporation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110592526A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112941580A (en) * | 2020-12-07 | 2021-06-11 | 达运精密工业股份有限公司 | Metal mask and method for manufacturing the same |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010019807A1 (en) * | 1999-12-24 | 2001-09-06 | Tsutomu Yamada | Deposition mask and manufacturing method thereof, and electroluminescence display device and manufacturing method thereof |
| JP2006249489A (en) * | 2005-03-10 | 2006-09-21 | Seiko Epson Corp | Mask and method of manufacturing the same |
| CN100389479C (en) * | 2004-06-21 | 2008-05-21 | 精工爱普生株式会社 | Mask, method for producing the same, deposition method, electronic device, and electronic apparatus |
| CN100414682C (en) * | 2004-09-17 | 2008-08-27 | 精工爱普生株式会社 | Film forming method, electronic device and electronic apparatus |
| KR20130046303A (en) * | 2011-10-27 | 2013-05-07 | 엘지디스플레이 주식회사 | Shadow mask for organic electroluminescent display device and method for fabricating the same |
| CN103938154A (en) * | 2013-06-21 | 2014-07-23 | 厦门天马微电子有限公司 | Masking plate and manufacturing method thereof |
| US20160322571A1 (en) * | 2015-04-28 | 2016-11-03 | Samsung Display Co., Ltd. | Mask frame assembly for thin layer deposition, method of manufacturing the same, and method of manufacturing display apparatus by using the mask frame assembly |
| CN106381464A (en) * | 2015-07-28 | 2017-02-08 | 昆山国显光电有限公司 | General metal mask plate and manufacturing method thereof |
| CN107636191A (en) * | 2016-09-30 | 2018-01-26 | 深圳市柔宇科技有限公司 | Metal cover and OLED evaporation coating methods for OLED evaporations |
| WO2018097533A1 (en) * | 2016-11-22 | 2018-05-31 | 주식회사 티지오테크 | Frame-integrated mask and method for producing same |
-
2018
- 2018-06-12 CN CN201810602412.0A patent/CN110592526A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010019807A1 (en) * | 1999-12-24 | 2001-09-06 | Tsutomu Yamada | Deposition mask and manufacturing method thereof, and electroluminescence display device and manufacturing method thereof |
| CN100389479C (en) * | 2004-06-21 | 2008-05-21 | 精工爱普生株式会社 | Mask, method for producing the same, deposition method, electronic device, and electronic apparatus |
| CN100414682C (en) * | 2004-09-17 | 2008-08-27 | 精工爱普生株式会社 | Film forming method, electronic device and electronic apparatus |
| JP2006249489A (en) * | 2005-03-10 | 2006-09-21 | Seiko Epson Corp | Mask and method of manufacturing the same |
| KR20130046303A (en) * | 2011-10-27 | 2013-05-07 | 엘지디스플레이 주식회사 | Shadow mask for organic electroluminescent display device and method for fabricating the same |
| CN103938154A (en) * | 2013-06-21 | 2014-07-23 | 厦门天马微电子有限公司 | Masking plate and manufacturing method thereof |
| US20160322571A1 (en) * | 2015-04-28 | 2016-11-03 | Samsung Display Co., Ltd. | Mask frame assembly for thin layer deposition, method of manufacturing the same, and method of manufacturing display apparatus by using the mask frame assembly |
| CN106381464A (en) * | 2015-07-28 | 2017-02-08 | 昆山国显光电有限公司 | General metal mask plate and manufacturing method thereof |
| CN107636191A (en) * | 2016-09-30 | 2018-01-26 | 深圳市柔宇科技有限公司 | Metal cover and OLED evaporation coating methods for OLED evaporations |
| WO2018097533A1 (en) * | 2016-11-22 | 2018-05-31 | 주식회사 티지오테크 | Frame-integrated mask and method for producing same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112941580A (en) * | 2020-12-07 | 2021-06-11 | 达运精密工业股份有限公司 | Metal mask and method for manufacturing the same |
| CN112941580B (en) * | 2020-12-07 | 2023-11-03 | 达运精密工业股份有限公司 | Metal mask and method for manufacturing the same |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20191220 |