CN110580970B - High-adhesion low-temperature conductive silver paste for solar HIT (heterojunction with intrinsic thin layer) cell and preparation method thereof - Google Patents
High-adhesion low-temperature conductive silver paste for solar HIT (heterojunction with intrinsic thin layer) cell and preparation method thereof Download PDFInfo
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 89
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000000843 powder Substances 0.000 claims abstract description 40
- 229910000846 In alloy Inorganic materials 0.000 claims abstract description 34
- 229910052709 silver Inorganic materials 0.000 claims abstract description 30
- 239000004332 silver Substances 0.000 claims abstract description 30
- 239000011347 resin Substances 0.000 claims abstract description 29
- 229920005989 resin Polymers 0.000 claims abstract description 29
- 239000002270 dispersing agent Substances 0.000 claims abstract description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 21
- 239000003085 diluting agent Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 14
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 claims description 3
- 239000004925 Acrylic resin Substances 0.000 claims description 3
- 229920000178 Acrylic resin Polymers 0.000 claims description 3
- 229910001152 Bi alloy Inorganic materials 0.000 claims description 3
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- MPZNMEBSWMRGFG-UHFFFAOYSA-N bismuth indium Chemical group [In].[Bi] MPZNMEBSWMRGFG-UHFFFAOYSA-N 0.000 claims description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical group [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims description 3
- 239000012948 isocyanate Substances 0.000 claims description 3
- 150000002513 isocyanates Chemical class 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
- 229920001225 polyester resin Polymers 0.000 claims description 3
- 239000004645 polyester resin Substances 0.000 claims description 3
- 239000004814 polyurethane Substances 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- 229920006395 saturated elastomer Polymers 0.000 claims description 3
- QYMFNZIUDRQRSA-UHFFFAOYSA-N dimethyl butanedioate;dimethyl hexanedioate;dimethyl pentanedioate Chemical compound COC(=O)CCC(=O)OC.COC(=O)CCCC(=O)OC.COC(=O)CCCCC(=O)OC QYMFNZIUDRQRSA-UHFFFAOYSA-N 0.000 claims description 2
- 239000006185 dispersion Substances 0.000 description 8
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002002 slurry Substances 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- -1 indium metals Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention relates to a high-adhesiveness low-temperature conductive silver paste for a solar HIT (heterojunction with intrinsic thin layer) battery and a preparation method thereof, wherein the silver paste is prepared from the following materials in percentage by mass: 37-40% of silver powder, 39-43% of silver-coated copper powder, 6-7.5% of resin, 0-1.5% of diluent, 2-3% of curing agent, 0.4-0.6% of dispersing agent, 6-7% of first indium alloy powder and 3-5% of second indium alloy powder.
Description
Technical Field
The invention relates to the field of conductive silver paste, in particular to a low-temperature conductive silver paste with strong adhesiveness for a solar HIT (heterojunction with intrinsic thin layer) battery and a preparation method thereof.
Background
Heterojunction HIT (heterojunction with Intrinsic Thin-layer) solar cell (HJT, SHJ, SJT and the like for short) generally takes n-type crystalline silicon as a substrate and amorphous silicon with wide band gap as an emitter, and the cell has a double-sided symmetrical structure, wherein two Thin Intrinsic amorphous silicon layers are arranged on two sides of the n-type silicon substrate, a P-type amorphous silicon emitter layer is arranged on the front side, and an n-type amorphous silicon back surface field is arranged on the back side; and depositing transparent conductive oxide films on the amorphous silicon thin layers on the two sides by a sputtering method, and finally preparing the conductive grid.
The traditional method for preparing the conductive grid electrode by adopting a sputtering method has the defects of high cost, complex process, low efficiency and the like, and because the HIT battery uses a-si to form a PN junction, the HIT battery can be completed at a low temperature of below 200 ℃, the conductive grid electrode of the HIT battery can be prepared by adopting silver paste through a screen printing process at present.
The conductivity, viscosity, printability, tensile force and the like of the silver paste directly influence whether a conductive grid of the HIT battery can be normally used, the conductivity, viscosity, printability and tensile force of the silver paste in the current market are not very superior, the known conductivity is influenced by the content of silver powder in the silver paste, the silver powder cannot form good contact if the content of the silver powder is too small, the silver powder cannot be conductive if the content of the silver powder is lower than a threshold value, the silver powder cannot be easily dispersed and agglomerated if the content of the silver powder is too large, the silver powder is easy to agglomerate and reduce the viscosity, the printability causes that a specific shape is difficult to print, and because the HIT battery is completed at a low temperature of below 200 ℃, a silver powder sintering process is not adopted during silver paste preparation, the silver powder, the silver and the base material are bonded by organic resin, and the tensile force of the silver powder is generally smaller than 1N (the traditional, and when the pulling force is greater than 1N, the film is easy to tear under stress.
Therefore, the applicant filed a patent application with application number CN201811156329.1, entitled "a low-temperature conductive silver paste for solar HIT cells and a preparation method thereof" to the national intellectual property office in 2018, 9 and 30, and the silver paste of the technical scheme recorded in the application has the characteristics of excellent electrical conductivity, viscosity, printability, tensile force and the like, and can basically meet the production requirements, but has the defects of large content of silver powder required for ensuring electrical conductivity, high cost, improved adhesiveness and poor hardness.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a low-temperature conductive silver paste with strong adhesiveness for a solar HIT cell and a preparation method thereof, and the low-temperature conductive silver paste has the advantages of low cost, strong adhesive force and the like, and the specific technical scheme is as follows:
a low-temperature conductive silver paste with strong adhesion for a solar HIT cell is prepared from the following materials in percentage by mass: 37-40% of silver powder, 39-43% of silver-coated copper powder, 6-7.5% of resin, 0-1.5% of diluent, 2-3% of curing agent, 0.4-0.6% of dispersing agent, 6-7% of first indium alloy powder and 3-5% of second indium alloy powder.
As a preferred scheme of the invention, the low-temperature conductive silver paste is prepared from the following materials in percentage by mass: 37% of silver powder, 43% of silver-coated copper powder, 7.5% of resin, 2% of curing agent, 0.5% of dispersing agent, 7% of first indium alloy powder and 3% of second indium alloy powder.
As a preferred scheme of the invention, the low-temperature conductive silver paste is prepared from the following materials in percentage by mass: 40% of silver powder, 39% of silver-coated copper powder, 6% of resin, 1.5% of diluent, 2% of curing agent, 0.5% of dispersing agent, 6% of first indium alloy powder and 5% of second indium alloy powder.
As a preferred scheme of the invention, the low-temperature conductive silver paste is prepared from the following materials in percentage by mass: 39% of silver powder, 40% of silver-coated copper powder, 6.4% of resin, 1% of diluent, 2.5% of curing agent, 0.6% of dispersing agent, 6.5% of first indium alloy powder and 4% of second indium alloy powder.
In a preferred embodiment of the present invention, the resin is one or two of a saturated polyester resin and an acrylic resin having a hydroxyl value of less than 50 mgKOH/g.
In a preferred embodiment of the present invention, the silver powder is in a flake form, and the silver-coated copper powder is in a spherical form.
In a preferred embodiment of the present invention, the diluent is one or two of diethylene glycol ethyl ether acetate and dibasic ester, which are high-boiling organic solvents.
In a preferred embodiment of the present invention, the curing agent is a blocked isocyanate curing agent.
In a preferred embodiment of the present invention, the dispersant is a polyurethane dispersant or an acrylic dispersant.
A preparation method of a low-temperature conductive silver paste with strong adhesion for a solar HIT cell comprises the following steps: firstly, preparing a high molecular resin carrier, adding 6-7.5% of resin by mass percent into 0-15% of diluent, pouring into a dissolving kettle, stirring at a stirring speed of 2000r/min for 5-6 hours until the resin is completely dissolved in the diluent, standing for 2 hours, and filtering and removing impurities by using a 300-mesh polyester net to obtain the high molecular resin carrier;
preparing slurry, namely putting 37-40% of silver powder, 39-43% of silver-coated copper powder, 0.4-0.6% of dispersing agent, 6-7% of first indium alloy powder and 3-5% of second indium alloy powder into a high-speed dispersion machine for high-speed dispersion, wherein the dispersion speed is 2000r/min, and the dispersion time is 20-30min, so as to obtain a uniform primary carrier;
and thirdly, slurry production, pouring the primary carrier into a three-roll grinder for grinding, adjusting the rotation speed of a roller barrel of the three-roll grinder to 70 r.p.m., adjusting the pressure to 3 +/-0.25 MPa, rolling for 4-5 times to achieve a sufficient grinding effect until the fineness of the slurry reaches below 15 mu m, thus obtaining a secondary carrier, adding 2-3% of the secondary carrier and a curing agent into a planetary mixer for uniformly stirring, adding a diluent for adjusting the viscosity to 300 +/-50 dPa.S, and then vacuumizing to remove bubbles, thus obtaining the low-temperature conductive silver paste.
Has the advantages that: the low-temperature conductive silver paste for the solar HIT cell is reasonable in component selection and low in cost, better adhesive force and tensile force can be obtained on a silicon chip, and meanwhile, the component has better stability under severe environments such as high temperature, high humidity and the like, can meet the requirements of a silk-screen grid of the solar HIT cell, and is compared with the traditional silver paste as shown in the following table:
detailed description of the preferred embodiments.
The following further illustrates embodiments of the invention:
example 1: a low-temperature conductive silver paste with strong adhesion for a solar HIT cell is prepared from the following materials in percentage by mass: 37-40% of silver powder, 39-43% of silver-coated copper powder, 6-7.5% of resin, 0-1.5% of diluent, 2-3% of curing agent, 0.4-0.6% of dispersing agent, 6-7% of first indium alloy powder and 3-5% of second indium alloy powder.
Example 2: a low-temperature conductive silver paste with strong adhesion for a solar HIT cell is prepared from the following materials in percentage by mass: 37% of silver powder, 43% of silver-coated copper powder, 7.5% of resin, 2% of curing agent, 0.5% of dispersing agent, 7% of first indium alloy powder and 3% of second indium alloy powder.
Example 3: a low-temperature conductive silver paste with strong adhesion for a solar HIT cell is prepared from the following materials in percentage by mass: 40% of silver powder, 39% of silver-coated copper powder, 6% of resin, 1.5% of diluent, 2% of curing agent, 0.5% of dispersing agent, 6% of first indium alloy powder and 5% of second indium alloy powder.
Example 4: a low-temperature conductive silver paste with strong adhesion for a solar HIT cell is prepared from the following materials in percentage by mass: 39% of silver powder, 40% of silver-coated copper powder, 6.4% of resin, 1% of diluent, 2.5% of curing agent, 0.6% of dispersing agent, 6.5% of first indium alloy powder and 4% of second indium alloy powder.
Specifically, the resin is one or two of saturated polyester resin and acrylic resin with a hydroxyl value of less than 50mgKOH/g, the silver powder is flaky, the silver-coated copper powder is spherical, the diluent is one or two of high-boiling-point organic solvents such as diethylene glycol ethyl ether acetate and dibasic acid ester, the curing agent is a closed isocyanate curing agent, and the dispersing agent is polyurethane or acrylic dispersing agent.
Specifically, the first indium alloy powder is indium tin alloy powder, the second indium alloy powder is indium bismuth alloy powder, when the indium tin alloy powder, the indium bismuth alloy powder, the silver powder and the silver-coated copper powder in proper proportion are sintered at the low temperature of 200 ℃, when the external force generated by the high-temperature baking shrinkage of organic resin reaches the purpose of pressurization, the melting point of the metals in the organic resin can reduce the expansion and the flow of the metals at the high temperature, so that the metals are more closely fused, after the fused indium metals are contacted with the copper metal coated with the silver, a copper indium metal compound is formed, the risk of copper oxidation and the sintering temperature are reduced, the bonding force between the metals and between silicon wafers is obviously enhanced, the density can reach more than 98 percent and can be comparable to that of sintered silver paste, but the copper indium metal compound is attached to the organic resin, better adhesive force and tensile force can be obtained on the silicon wafers, and meanwhile, the assembly is under the severe environments of high temperature, high humidity and the like, has better stability.
A preparation method of a low-temperature conductive silver paste with strong adhesion for a solar HIT cell comprises the following steps: firstly, preparing a high molecular resin carrier, adding 6-7.5% of resin by mass percent into 0-15% of diluent (if the diluent is 0, directly skipping the step and adding the resin into the step II), pouring the mixture into a dissolving kettle for stirring at a stirring speed of 2000r/min for 5-6 hours until the resin is completely dissolved in the diluent, standing for 2 hours, and filtering and removing impurities by using a 300-mesh polyester net to obtain the high molecular resin carrier;
preparing slurry, namely putting 37-40% of silver powder, 39-43% of silver-coated copper powder, 0.4-0.6% of dispersing agent, 6-7% of first indium alloy powder and 3-5% of second indium alloy powder into a high-speed dispersion machine for high-speed dispersion, wherein the dispersion speed is 2000r/min, and the dispersion time is 20-30min, so as to obtain a uniform primary carrier;
and thirdly, slurry production, pouring the primary carrier into a three-roll grinder for grinding, adjusting the rotation speed of a roller barrel of the three-roll grinder to 70 r.p.m., adjusting the pressure to 3 +/-0.25 MPa, rolling for 4-5 times to achieve a sufficient grinding effect until the fineness of the slurry reaches below 15 mu m, thus obtaining a secondary carrier, adding 2-3% of the secondary carrier and a curing agent into a planetary mixer for uniformly stirring, adding a diluent for adjusting the viscosity to 300 +/-50 dPa.S, and then vacuumizing to remove bubbles, thus obtaining the low-temperature conductive silver paste.
The above description is for the purpose of describing the invention in more detail with reference to specific preferred embodiments, and it should not be construed that the embodiments of the invention are limited to those described herein, and it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention.
Claims (7)
1. The low-temperature conductive silver paste with strong adhesion for the solar HIT cell is characterized by being prepared from the following materials in percentage by mass: 37-40% of silver powder, 39-43% of silver-coated copper powder, 6-7.5% of resin, 0-1.5% of diluent, 2-3% of curing agent, 0.4-0.6% of dispersing agent, 6-7% of first indium alloy powder and 3-5% of second indium alloy powder, wherein the first indium alloy powder is indium-tin alloy powder, the second indium alloy powder is indium-bismuth alloy powder, the resin is one or two of saturated polyester resin and acrylic resin with the hydroxyl value of less than 50mgKOH/g, the silver powder is flaky, and the silver-coated copper powder is spherical.
2. The low-temperature conductive silver paste with strong adhesion for the solar HIT cell is characterized by being prepared from the following materials in percentage by mass: 37% of silver powder, 43% of silver-coated copper powder, 7.5% of resin, 2% of curing agent, 0.5% of dispersing agent, 7% of first indium alloy powder and 3% of second indium alloy powder.
3. The low-temperature conductive silver paste with strong adhesion for the solar HIT cell is characterized by being prepared from the following materials in percentage by mass: 40% of silver powder, 39% of silver-coated copper powder, 6% of resin, 1.5% of diluent, 2% of curing agent, 0.5% of dispersing agent, 6% of first indium alloy powder and 5% of second indium alloy powder.
4. The low-temperature conductive silver paste with strong adhesion for the solar HIT cell is characterized by being prepared from the following materials in percentage by mass: 39% of silver powder, 40% of silver-coated copper powder, 6.4% of resin, 1% of diluent, 2.5% of curing agent, 0.6% of dispersing agent, 6.5% of first indium alloy powder and 4% of second indium alloy powder.
5. The low-temperature conductive silver paste with strong adhesion for the solar HIT cell as claimed in claim 1, wherein the diluent is one or two of high-boiling-point organic solvents such as diethylene glycol ethyl ether acetate and dibasic ester.
6. The high-adhesion low-temperature conductive silver paste for the solar HIT cell as claimed in claim 1, wherein the curing agent is a blocked isocyanate curing agent.
7. The high-adhesion low-temperature conductive silver paste for the solar HIT cell as claimed in claim 1, wherein the dispersant is polyurethane or acrylic dispersant.
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| CN201910820977.0A CN110580970B (en) | 2019-09-02 | 2019-09-02 | High-adhesion low-temperature conductive silver paste for solar HIT (heterojunction with intrinsic thin layer) cell and preparation method thereof |
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| CN201910820977.0A CN110580970B (en) | 2019-09-02 | 2019-09-02 | High-adhesion low-temperature conductive silver paste for solar HIT (heterojunction with intrinsic thin layer) cell and preparation method thereof |
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| CN112071468B (en) * | 2020-09-11 | 2022-11-22 | 南京苏煜新能源科技有限公司 | Conductive slurry for HJT battery and preparation method thereof |
| CN112562885B (en) * | 2020-12-29 | 2022-06-17 | 四川东树新材料有限公司 | High-welding-tension main grid low-temperature silver paste for solar heterojunction battery and preparation method thereof |
| CN113053561B (en) * | 2021-03-27 | 2022-09-09 | 苏州卡睿杰新材料科技有限公司 | Low-temperature slurry for heterojunction solar cell with silver-plated copper powder as conductive particles and preparation method thereof |
| CN113284644B (en) * | 2021-04-13 | 2022-12-13 | 广州市儒兴科技股份有限公司 | Silver paste for heterojunction battery and preparation method and application thereof |
| CN113223748B (en) * | 2021-05-12 | 2022-09-23 | 东南大学 | Low-temperature sintered conductive silver paste, and preparation method and application thereof |
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| CN102280160A (en) * | 2011-08-18 | 2011-12-14 | 陈晓东 | Conductive paste for back electrode of silicon solar cell and preparation method of conductive paste |
| CN102280161B (en) * | 2011-08-18 | 2013-08-28 | 陈晓东 | Conductive paste for positive electrode of crystal silicon solar cell and preparation method of conductive paste |
| CN108133768A (en) * | 2017-12-25 | 2018-06-08 | 深圳市百柔新材料技术有限公司 | A kind of high conductivity low temperature curing type electrocondution slurry and preparation method thereof |
| CN108538434A (en) * | 2018-05-31 | 2018-09-14 | 钦州学院 | A kind of low migration electrode slurry of silver and preparation method of organically-modified solar cell |
| CN109135612B (en) * | 2018-08-10 | 2021-01-26 | 云南科威液态金属谷研发有限公司 | Low-melting-point metal micro-nano powder conductive adhesive and preparation method thereof |
| CN109686472B (en) * | 2018-12-29 | 2020-07-14 | 广州市儒兴科技开发有限公司 | Low-temperature silver paste for single-component HJT battery |
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