CN110571279A - Low forward clamping voltage switch diode with silicon controlled rectifier gate and anode in short circuit - Google Patents
Low forward clamping voltage switch diode with silicon controlled rectifier gate and anode in short circuit Download PDFInfo
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- CN110571279A CN110571279A CN201910966898.0A CN201910966898A CN110571279A CN 110571279 A CN110571279 A CN 110571279A CN 201910966898 A CN201910966898 A CN 201910966898A CN 110571279 A CN110571279 A CN 110571279A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 34
- 239000010703 silicon Substances 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000000463 material Substances 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 238000010586 diagram Methods 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 8
- 238000000407 epitaxy Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- 230000001052 transient effect Effects 0.000 description 4
- 238000007599 discharging Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 101001128814 Pandinus imperator Pandinin-1 Proteins 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
the invention provides a low forward clamping voltage switch diode with a silicon controlled gate electrode and an anode in short circuit, which comprises a semiconductor body consisting of a substrate material or a substrate material epitaxial layer, an N-type trap, a P-type trap, N-type heavy doping and P-type heavy doping, wherein a silicon controlled structure is formed by properly designing the sizes and the intervals of the N-type trap, the P-type trap, the N-type doping and the P-type doping, and the low forward clamping voltage switch diode is characterized in that the gate electrode and the anode of the silicon controlled structure are in short circuit through metal connection to form the switch diode. The invention uses the current from the gate pole to the cathode to provide the trigger current from the anode to the cathode to form positive feedback, so as to lead the silicon controlled structure to be started in advance, reduce the starting voltage of the silicon controlled structure and obtain low forward clamping voltage.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a low forward clamping voltage switch diode with a silicon controlled rectifier gate electrode in short circuit with an anode.
background
with the reduction of the process size, the protection level of the on-chip integrated circuit is weaker, and the transient interference of voltage and current is not available, so that the equipment can be fatally damaged at any time, and the demand and the dependence on a Transient Voltage Suppressor (TVS) are increased. In the TVS applied in the data interface circuit, the capacitance is a crucial parameter, and the transmission signal is attenuated when the capacitance is too large, so the requirement of the low-capacitance protection device is increasingly urgent.
A switching diode is a kind of semiconductor diode, and is a type of diode specially designed and manufactured for performing "on" (forward conduction) and "off" (reverse cut-off) on a circuit. The switching diode has the characteristics of high switching speed, small volume, long service life, high reliability, low capacitance and the like, and is widely applied to switching circuits, detection circuits, high-frequency and pulse rectification circuits and automatic control circuits of electronic equipment. One form of high frequency application is to use the TVS diode in a matched manner, and by using the series-parallel connection of the switching diode and the TVS diode, the capacitance of a port is reduced from the large capacitance of the TVS diode to the low capacitance close to the switching diode, and the capacitance of a TVS product is reduced, so that the high-speed port application can be adapted. The switching diode can be integrated with the TVS diode through packaging, and can also be integrated on the same chip through chip process design.
The low-capacitance TVS product comprising TVS diodes and switching diodes (D1 and D2) is shown in figure 1. the TVS is used for potential control and is in a breakdown state during operation, and the breakdown voltage is adjusted to adapt to different application scenes, and is generally more than 1.2 times of the operation voltage. After the diode is connected with the TVS in series and parallel, because the breakdown voltage of the switching diode is dozens of volts to hundreds of volts and is much higher than that of the TVS diode, when the charge is discharged, the charge cannot be discharged from the breakdown direction, but is discharged through a path from the forward conduction direction to the reverse breakdown of the TVS diode, as shown in the attached figure 1, when the forward voltage is applied to two ends of the switching diode, namely Pin2-Pin1, the current is discharged to the Pin1 (generally GND) through the forward direction of D2 and the breakdown direction of the TVS; when a negative voltage is applied across the switching diode Pin2-Pin1, current is drained in the positive direction through D1. Although the current path is increased, it is widely used due to its excellent capacitance performance.
The relationship of the parameters in the TVS product aspect to the two types of diodes:
Breakdown voltage-TVS diode decision;
capacitance-switching diode decision;
the clamping voltage and the dynamic resistor-TVS diode and the switch diode are jointly determined;
The low capacitance can be obtained by reducing the area of the switch diode, but the transient charge discharging capability is in direct proportion to the area of the switch diode, and the transient charge discharging capability is reduced and the dynamic resistance is increased while the lower capacitance is obtained.
in order to reduce the capacitance of the switching diode, the switching diode is usually made of a high-resistance epitaxial material, or the switching diode is made in a low-concentration well, so that the depletion region of the switching diode is widened to achieve the purpose of reducing the capacitance, and meanwhile, the negative influence is that the forward on-state dynamic resistance of the switching diode is increased, and the protection effect of the TVS device is influenced.
Therefore, the present invention is invented in view of the above-mentioned disadvantages of practical manufacturing and practical application, and is based on the spirit and concept of the present invention, and is assisted by professional knowledge and experience, and after many kinds of ingenuity and experiments, and provides a method for obtaining low forward clamping voltage by using a thyristor structure and a switching diode, which have excellent capacitance capability, and simultaneously have enhanced forward conducting current capability, reduced dynamic resistance, and low forward clamping voltage. When applied in series-parallel with TVS diodes, a low capacitance and low forward clamping voltage protection device is obtained.
disclosure of Invention
The invention provides a method for obtaining low forward clamping voltage by a low forward clamping voltage switch diode with a silicon controlled rectifier gate electrode and an anode in short circuit, which solves the problems in the prior art.
The technical scheme of the invention is realized as follows:
a low forward clamping voltage switch diode with a silicon controlled gate electrode in short circuit with an anode comprises a semiconductor body formed by a substrate material or a substrate material epitaxial layer, an N-type trap, a P-type trap, N-type heavy doping and P-type heavy doping, and a silicon controlled structure is formed by properly designing the sizes and the intervals of the N-type trap, the P-type trap, the N-type doping and the P-type doping.
Preferably, the thyristor comprises two gates, and both gates are in short circuit with the anode.
Preferably, the substrate material is a P-type substrate or an N-type substrate, the epitaxial layer of the substrate material is a P-epitaxial layer formed on the substrate material or an N-epitaxial layer formed on the substrate material, and the thyristor structure is fabricated in the P-type substrate, the N-type substrate, the P-epitaxial layer formed on the substrate material or the N-epitaxial layer formed on the substrate material.
preferably, the resistivity of the P-type substrate, the resistivity of the N-type substrate, the P epitaxial layer formed on the substrate material, and the resistivity of the N outer layer formed on the substrate material are all greater than or equal to 1 Ω · cm.
Preferably, ohmic contacts are formed to the metal by heavy N-type doping and heavy P-type doping.
preferably, ohmic contacts are formed to the metal through the N-well and the P-well.
The method for obtaining the low forward clamping voltage by using the silicon controlled structure comprises the following steps:
a: enabling a path from a gate electrode to a cathode electrode of the silicon controlled structure to have the switching characteristic and the low-capacitance characteristic of a switching diode;
b: enabling a path from an anode to a cathode of the silicon controlled structure to have the off-state characteristic and the low-capacitance characteristic of a switch diode and pass through the starting voltage range of the on-state characteristic;
C: the current from the gate pole to the cathode is used for providing trigger current for the anode to the cathode to form positive feedback, so that the silicon controlled structure is started in advance, the starting voltage of the silicon controlled structure is reduced, and low forward clamping voltage is obtained.
In a preferred embodiment, step C provides a trigger current for the anode to cathode using a gate-to-cathode current, including a first gate-to-cathode current providing a trigger current for the anode to cathode, and further includes accelerating positive feedback of the anode-to-cathode current using a second participant in charge transport.
In a preferred embodiment, the thyristor structure is manufactured in an N well and a P well with the combination concentration adjustable within a certain range, wherein the distance, the concentration and the junction depth of the N well and the P well are adjusted so as to adjust the voltage and the trigger current from the anode to the cathode.
In a preferred embodiment, the implantation dosage of the junction formed by the N-well and the P-well is 1E 13-1E 15, and the junction pushing temperature is 1050-1200 ℃.
In a preferred embodiment, the step a of providing the gate-to-cathode path of the thyristor structure with the "on-off" characteristic and the low-capacitance characteristic of the switching diode, and the step B of providing the anode-to-cathode path of the thyristor structure with the "off" characteristic and the low-capacitance characteristic of the switching diode and the turn-on voltage range passing through the "on" characteristic, both include using the adjusted junction concentration matching and the size interval.
The switch diode has excellent capacitance capability, and simultaneously, the forward conducting current capability of the switch diode is enhanced, the dynamic resistance is reduced, and low forward clamping voltage is obtained. When applied in series-parallel with TVS diodes, a low capacitance and low forward clamping voltage protection device is obtained.
Drawings
in order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a diagram of a commonly used low capacitance TVS circuit;
Fig. 2 illustrates a schematic diagram of a circuit diagram symbol and a general cross-sectional structure of D1 in a low-capacitance TVS;
FIG. 3 is a schematic diagram of circuit pattern symbols and general cross-sectional structures of a thyristor structure;
FIG. 4 is a schematic diagram of the electrical connection of the thyristor gate and anode shorting structure and a graph of IV;
FIG. 5 is a schematic diagram of a low capacitance TVS circuit using a low forward clamp voltage switching diode with a thyristor gate to anode shorting configuration;
FIG. 6 is a schematic cross-sectional view of a switching diode with a thyristor gate and anode short-circuited structure;
FIG. 7 is a schematic diagram of the cross section and electrical connection of a switch diode with a thyristor gate and anode short-circuit structure;
FIG. 8 is a schematic diagram of the cross section and electrical connection of the switch diode with the multi-group insertion finger silicon controlled gate and anode short-circuit structure;
FIG. 9 is a schematic cross-sectional view of a thyristor gate-to-anode short-circuited switching diode with a gate G2;
FIG. 10 is a schematic diagram showing the cross section and electrical connection of the switching diode with the thyristor gate and anode short-circuited structure with the gate G2;
FIG. 11 is a schematic diagram of the cross section and electrical connection of the multiple groups of interdigitated thyristor gate and anode shorting structure switching diodes with gate G2.
In the figure: Nwell-N well; Pwell-P trap; Nepi-N epitaxy; Pepi-P epitaxy; a Nsub-N type substrate; a Psub-P type substrate; p + -P type heavy doping; n + -N type heavy doping; g1-first gate; g2-second gate; a-an anode; k-cathode.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
the method for obtaining the low forward clamping voltage by using the silicon controlled structure comprises the following steps:
a: enabling a path from a gate electrode to a cathode electrode of the silicon controlled structure to have the switching characteristic and the low-capacitance characteristic of a switching diode;
B: enabling a path from an anode to a cathode of the silicon controlled structure to have the off-state characteristic and the low-capacitance characteristic of a switch diode and pass through the starting voltage range of the on-state characteristic;
C: the current from the gate pole to the cathode is used for providing trigger current for the anode to the cathode to form positive feedback, so that the silicon controlled structure is started in advance, the starting voltage of the silicon controlled structure is reduced, and low forward clamping voltage is obtained.
Referring to fig. 3-11, the thyristor includes two gates: the first gate G1 and the second gate G2, the first gate G1 is short-circuited with the anode A, and the second gate G2 is short-circuited with the anode A.
and step C, providing trigger current for the anode A to the cathode K by using the current from the gate to the cathode K, wherein the trigger current is provided for the anode A to the cathode K by using the current from the first gate G1 to the cathode K, and the positive feedback of the current from the anode A to the cathode K is accelerated by using the second gate G1 to the cathode K.
The silicon controlled structure is manufactured in a P-type substrate Psub, an N-type substrate Nsub, a P epitaxy Pepi formed on a substrate material or an N epitaxy Nepi formed on the substrate material.
The resistivity of the P-type substrate Psub, the N-type substrate Nsub, the P epitaxy Pepi formed on the substrate material and the N epitaxy Nepi formed on the substrate material is more than or equal to 1 omega cm.
The silicon controlled structure is manufactured in an N well Nwell and a P well Pwell, the combination concentration of which can be adjusted within a certain range, wherein the distance, the concentration and the junction depth of the N well Nwell and the P well Pwell can be adjusted so as to adjust the voltage and the trigger current from the anode A to the cathode K.
The implantation doses for forming the junction by the N-well Nwell and the P-well Pwell are 1E 13-1E 15, and the junction push temperature is 1050-1200 ℃.
And the step B of enabling the path from the anode A to the cathode K of the silicon controlled structure to have the off state characteristic and the low capacitance characteristic of the switching diode and pass through the starting voltage range of the on state characteristic, wherein the step A comprises the step of adopting the adjustment of junction concentration collocation and the size interval.
The concentrations of the N-type heavily doped N + and the P-type heavily doped P + are designed to form ohmic contact with metal, or the concentrations of the N-well Nwell and the P-well Pwell are designed to form ohmic contact with metal.
Based on the method, the prepared low forward clamping voltage switch diode with the silicon controlled gate and anode A short circuit structure is an integrated switch diode, and comprises a semiconductor main body formed by a substrate material, an epitaxial layer, an N well Nwell, a P well Pwell, N type heavily doped N + and P type heavily doped P +, the silicon controlled structure is formed by properly designing the positions of the N well Nwell, the P well Pwell, the N type heavily doped N + and the P type heavily doped P +, and the gate of the silicon controlled structure and the anode A are short circuited through metal connection to form the switch diode.
Through proper junction concentration collocation and size interval design, the path from the gate pole of the silicon controlled structure to the cathode K has the switching characteristic and the low capacitance characteristic of a switching diode, and can be used as the switching diode. The path from the anode A to the cathode K of the thyristor structure has the off-state characteristic and the low-capacitance characteristic of the switching diode, and can be used as the switching diode by controlling the starting voltage range of the on-state characteristic.
The gate pole and the anode A of the silicon control structure are in short circuit through metal connection, on the basis of compatibility of the switch diodes, current from the gate pole to the cathode K provides trigger current for the switch diodes from the anode A to the cathode K, positive feedback is formed through triggering, the silicon control structure is started in advance, and the starting voltage of the silicon control structure is reduced. The current path from anode a to cathode K becomes the primary current path due to the difference in current efficiency per unit area of the two paths. The two parallel switch diodes have excellent capacitance capability, meanwhile, the forward conducting current capability is enhanced, the dynamic resistance is reduced, and low forward clamping voltage is obtained.
The switch diode has excellent capacitance capability, and simultaneously, the forward conducting current capability of the switch diode is enhanced, the dynamic resistance is reduced, and low forward clamping voltage is obtained. When applied in series-parallel with TVS diodes, a low capacitance and low forward clamping voltage protection device is obtained.
the substrate material has small influence on the structure of the device, and the P epitaxy Pepi or N epitaxy Nepi formed in the P type substrate Psub or N type substrate Nsub or on the substrate material can be used for manufacturing the device. Preferably, the resistivity of the substrate or the epitaxial material has a high resistivity (1 Ω · cm) or more;
The structure needs to be manufactured in an N-well Nwell and a P-well Pwell, the concentration of the N-well Nwell and the concentration of the P-well Pwell are combined with different layout size designs, and the N-well Nwell and the P-well Pwell can be adjusted within a certain range to obtain a proper capacitance value, a proper starting voltage and a proper on-resistance; to obtain good characteristics, it is necessary to design appropriate junction concentration and design appropriate size spacing. The injection dosage of the junction formed by the N well Nwell and the P well Pwell is 1E 13-1E 15, the junction push temperature is 1050-1200 ℃, and the distance, concentration and junction depth between the N well and the P well Pwell can be used for adjusting the breakdown voltage and trigger current from the anode A to the cathode K.
The concentrations of N-type heavily doped N + and P-type heavily doped P + of the anode A, the cathode K and the gate G are formed, and the concentrations can be adjusted within a certain range by combining different layout size designs so as to obtain proper capacitance values, opening voltages and on-resistance; the N-type heavily doped N + and the P-type heavily doped P + can form good ohmic contact with metal; when obtaining a larger resistance, N-type heavily doped N + and P-type heavily doped P + with appropriate doping concentrations can be used, or ohmic contacts formed by N-well Nwell and P-well Pwell with metal can be used.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (6)
1. A low forward clamping voltage switch diode with a silicon controlled gate electrode in short circuit with an anode comprises a semiconductor body formed by a substrate material or a substrate material epitaxial layer, an N-type trap, a P-type trap, N-type heavy doping and P-type heavy doping, and a silicon controlled structure is formed by properly designing the sizes and the intervals of the N-type trap, the P-type trap, the N-type doping and the P-type doping.
2. The thyristor gate shorted to anode low forward clamp voltage switching diode of claim 1, wherein the thyristor comprises two gates, each shorted to an anode.
3. The thyristor gate-to-anode shorted low forward clamp voltage switching diode of claim 1 or 2, wherein the substrate material is a P-type substrate or an N-type substrate, the substrate material epitaxial layer is a P-epitaxial layer formed on the substrate material or an N-epitaxial layer formed on the substrate material, and the thyristor structure is fabricated in the P-type substrate, the N-type substrate, the P-epitaxial layer formed on the substrate material, or the N-epitaxial layer formed on the substrate material.
4. The thyristor gate-to-anode shorted low forward clamp voltage switching diode of claim 3, wherein the P-type substrate, the N-type substrate, the P epitaxial layer formed on the substrate material, and the N epitaxial layer formed on the substrate material each have a resistivity of 1 Ω -cm or greater.
5. The thyristor gate-to-anode shorted low forward clamp voltage switching diode of claim 3, wherein ohmic contact is made to the metal by heavily N-doped and heavily P-doped.
6. The thyristor gate-to-anode shorted low forward clamp voltage switching diode of claim 3, wherein the metal is in ohmic contact with the P-well through the N-well.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/081887 WO2021068461A1 (en) | 2019-07-01 | 2020-03-27 | Low forward clamping voltage switch diode with silicon-controlled gate being short-circuited with anode |
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| CN201910583058 | 2019-07-01 | ||
| CN2019105830586 | 2019-07-01 |
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| CN110571279A true CN110571279A (en) | 2019-12-13 |
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| WO2021068461A1 (en) * | 2019-07-01 | 2021-04-15 | 上海维安半导体有限公司 | Low forward clamping voltage switch diode with silicon-controlled gate being short-circuited with anode |
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| CN101145773A (en) * | 2006-09-12 | 2008-03-19 | 叶俊 | Double-gate turn-off thyristor and integrated circuit thereof |
| US8264058B2 (en) * | 2009-02-13 | 2012-09-11 | University Of South Carolina | MOS-driver compatible JFET structure with enhanced gate source characteristics |
| CN202949607U (en) * | 2012-12-06 | 2013-05-22 | 上海欣丰电子有限公司 | Linear high-voltage power supply for LED illuminating lamp |
| CN110571279A (en) * | 2019-07-01 | 2019-12-13 | 上海长园维安微电子有限公司 | Low forward clamping voltage switch diode with silicon controlled rectifier gate and anode in short circuit |
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| WO2021068461A1 (en) * | 2019-07-01 | 2021-04-15 | 上海维安半导体有限公司 | Low forward clamping voltage switch diode with silicon-controlled gate being short-circuited with anode |
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