CN110571135A - surface treatment method of nickel-plated layer - Google Patents
surface treatment method of nickel-plated layer Download PDFInfo
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- CN110571135A CN110571135A CN201910838523.6A CN201910838523A CN110571135A CN 110571135 A CN110571135 A CN 110571135A CN 201910838523 A CN201910838523 A CN 201910838523A CN 110571135 A CN110571135 A CN 110571135A
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- plated layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
Abstract
The application discloses a surface treatment method of a nickel melting layer, the surface of the nickel melting layer is provided with a pollution area, and the surface treatment method comprises the following steps: step S10: removing organic pollutants on the polluted area; step S20: after removing the organic contaminants, the nickel oxide on the contaminated area is removed. According to the surface treatment method of the nickel-plated layer, organic pollutants on the pollution area are removed firstly, and then nickel oxide on the pollution area is removed, so that the dark yellow pollution area on the surface of the nickel-plated layer is effectively removed, the purpose of cleaning the pollutants which cause the dark yellow pollution area on the surface of the nickel-plated layer is achieved, and the welding quality between the bonding pad and an external element and the stability of a chip product are improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to the field of metal layer surface treatment processes, and particularly relates to a surface treatment method of a nickel-plated layer.
Background
In the chip packaging process, the surface of the partial structure on the chip needs to be surface treated to avoid oxidation or corrosion. A commonly used surface treatment process in the art is the ENIG process (Electro less Nickel/immersion gold, Nickel-gold or Nickel-gold immersion). The bonding pad is used as an example of a part of the structure in the chip, the bonding pad has a surface (hereinafter referred to as a bonding surface) bonded with an external element, the bonding surface of the bonding pad can be processed by an ENIG process to form a nickel-plated layer, and the nickel-plated layer can protect the bonding surface of the bonding pad from being oxidized or corroded.
however, in the packaging process, at least part of the surface of the nickel-plated layer on the bonding pad can form a dark yellow pollution area. The dark yellow pollution area is formed due to pollutants, and has a great influence on the welding quality between the bonding pad and an external element, so that the stability of a chip product is reduced.
Disclosure of Invention
In view of the above-mentioned drawbacks and deficiencies of the prior art, it is desirable to provide a method for surface treatment of a nickel-plated layer.
The application provides a surface treatment method of a nickel-plated layer, the surface of the nickel-plated layer is provided with a pollution area, and the surface treatment method comprises the following steps:
Step S10: removing organic pollutants on the polluted area;
Step S20: after removing the organic contaminants, the nickel oxide on the contaminated area is removed.
Further, in step S20, the nickel oxide on the contaminated area is removed by flux.
Further, step S20 includes:
coating the scaling powder on the polluted area to remove nickel oxide, and heating the scaling powder in the removing process, wherein the heating temperature in the heating process is 100-150 ℃, and the heating time is 30-60 min.
Further, in step S10, the organic contaminants are removed by an organic solvent.
further, the organic solvent is an alcohol.
Further, the contaminated area is subjected to a cleaning treatment with deionized water both before and after the removal of the organic contaminants.
Further, after step S20, the surface treatment method further includes:
Step S30: and judging whether the removal rate of the polluted area reaches a preset standard, if not, repeating the step S20 until the removal rate of the polluted area reaches the preset standard.
Further, before repeating step S20 each time, the method further includes:
The contaminated area is subjected to a deionized water rinsing process and/or the step S10 is repeated.
further, the soldering flux is water-soluble soldering flux.
Further, the organic solvent is ethanol or isopropanol.
According to the surface treatment method of the nickel-plated layer, organic pollutants on the pollution area are removed firstly, and then nickel oxide on the pollution area is removed, so that the dark yellow pollution area on the surface of the nickel-plated layer is effectively removed, the purpose of cleaning the pollutants which cause the dark yellow pollution area on the surface of the nickel-plated layer is achieved, and the welding quality between the bonding pad and an external element and the stability of a chip product are improved.
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading of the following detailed description of non-limiting embodiments thereof, made with reference to the accompanying drawings in which:
Fig. 1 is a flowchart of a surface treatment method for a nickel-plated layer according to an embodiment of the present disclosure;
Fig. 2 is a flowchart of a surface treatment method for a nickel-plated layer according to another embodiment of the present disclosure.
Detailed Description
The present application will be described in further detail with reference to the following drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the relevant invention and not restrictive of the invention. It should be noted that, for convenience of description, only the portions related to the present invention are shown in the drawings.
it should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
in the chip packaging process, a dark yellow pollution area is formed on at least part of the surface of the nickel metallized layer on the chip. Contaminants in the contamination zone can degrade the quality of the bond between the pad and the external component. Based on the dark yellow pollution area on the surface of the nickel-plated layer, the applicant researches and determines that the reason for forming the pollution area on the surface of the nickel-plated layer is as follows: organic pollutants left by workers when the workers touch the surface of the nickel-gold layer and nickel metal in the nickel-gold layer migrate to the surface of the gold metal under high-temperature and multi-vapor workshop environment and are oxidized to form nickel oxide. Wherein the organic contaminants are located on the surface of the nickel oxide.
Referring to fig. 1, an embodiment of the present application provides a surface treatment method for a nickel-plated layer, where the surface of the nickel-plated layer has a contamination area, and the surface treatment method includes:
Step S10: removing organic pollutants on the polluted area;
step S20: after removing the organic contaminants, the nickel oxide on the contaminated area is removed.
In this embodiment, the organic contaminants and the nickel oxide in the contaminated area are removed one by removing the organic contaminants on the contaminated area and then removing the nickel oxide on the contaminated area, so as to achieve the purpose of cleaning the surface of the nickel gold layer. After the surface treatment method of the embodiment is adopted for the nickel-plated layer, the dark yellow pollution area on the surface is at least basically removed, the surface cleanliness is high, the welding quality between the bonding pad and an external element is favorably improved, and the stability of a chip product is further improved.
in some preferred embodiments, the nickel oxide on the contaminated area is removed by flux in step S20.
in the preferred embodiment, the nickel oxide is removed by, for example, but not limited to, chemical cleaning, specifically: and cleaning the polluted area by using the soldering flux to remove the nickel oxide. The cleaning mode of the scaling powder on the polluted area can be immersion cleaning or scrubbing cleaning. For example by swabbing the entire contaminated area with a cotton swab.
The flux includes an organic acid activator component that is effective for removing oxides (including nickel oxide). Meanwhile, the soldering flux can also have a protection effect on the surface of the nickel-plated gold layer so as to prevent the surface from reoxidizing, reduce the surface tension of the nickel-plated gold layer and improve the welding performance. The flux is preferably a water-soluble flux, i.e., a flux that is soluble in water. The water-soluble soldering flux is adopted, so that the whole polluted area is coated by the soldering flux, and the redundant soldering flux is removed by water after the polluted area is removed, so that the residual soldering flux is prevented from corroding and damaging the bonding pad.
In some preferred embodiments, step S20 includes:
Coating the scaling powder on the polluted area to remove nickel oxide, and heating the scaling powder in the removing process, wherein the heating temperature in the heating process is 100-150 ℃, and the heating time is 30-60 min.
In the preferred embodiment, the soldering flux is coated on the polluted area, and the soldering flux is heated at the heating temperature of 100-150 ℃ for 30-60min, so that the nickel oxide is efficiently removed by the soldering flux.
In some preferred embodiments, the organic contaminants are removed by an organic solvent in step S10.
In the preferred embodiment, the organic contaminants are located on the surface of the nickel oxide, so that the organic contaminants need to be removed first when the contaminated zone is cleaned. The organic pollutants comprise organic matters such as urea, lactic acid and fatty acid in body fluid of workers, organic matters falling onto a nickel-plated layer in air of a workshop and the like.
the organic contaminant is removed by, for example, but not limited to, chemical cleaning, and specifically by an organic solvent. Wherein, the cleaning mode of the organic solvent to the polluted area can be immersion cleaning or scrubbing cleaning. For example, the surface of the contaminated area is coated with an organic solvent to soak the surface of the contaminated area in the organic solvent, and the organic solvent dissolves the organic contaminants. Among them, the organic solvent may preferably be an alcohol-based organic solvent, such as ethanol, isopropanol, or the like.
in other embodiments, the organic contaminants may be removed by physical removal means such as ultraviolet irradiation.
In some preferred embodiments, the contaminated area is subjected to a cleaning process with deionized water both before and after removal of the organic contaminants.
In the preferred embodiment, before removing the organic contaminants, the processing method further includes step S09: the pollution area is cleaned by deionized water, so that impurities on the surface of the pollution area are effectively removed, and secondary pollution to the pollution area is avoided. Wherein, deionized water is preferably adopted to clean the polluted area in a wiping way.
The organic solvent on the contaminated zone includes dissolved organic contaminants. After removing the organic contaminants and before removing the nickel oxide, the processing method further includes step S11: the polluted area is cleaned by deionized water to remove the organic solvent on the polluted area, so that the nickel oxide is fully exposed, and the nickel oxide can be removed in the later period.
In some preferred embodiments, after step S20, the surface treatment method further includes:
Step S30: and judging whether the removal rate of the polluted area reaches a preset standard, if not, repeating the step S20 until the removal rate of the polluted area reaches the preset standard.
In the preferred embodiment, after the organic pollutants and the nickel oxide are removed from the polluted area, the color of the polluted area is changed from dark yellow to the original color of nickel and gold, so that the removal effect of the polluted area can be judged according to the area change of the dark yellow area in the polluted area. After the nickel oxide on the polluted area is removed, the removal rate of the polluted area is judged and detected. Specifically, the method comprises the following steps: and after removing the nickel oxide on the polluted area every time, judging whether the removal rate of the polluted area reaches a preset standard or not. If the removal rate does not reach the preset standard, the step 20 is repeated until the removal rate of the polluted area reaches the preset standard.
The predetermined criterion herein may be that the dark yellow portion of the contaminated area is visually inspected for the absence of residue. Step S30 specifically includes: and (4) visually observing whether the deep yellow part of the polluted area has residues, if not, indicating that the removal rate of the polluted area reaches the preset standard, otherwise, indicating that the removal rate of the polluted area does not reach the preset standard. Alternatively, the preset criterion is a removal rate threshold, and the removal rate threshold may be 90% or more. S30 specifically includes: whether the removal rate of the dark yellow area on the polluted area reaches a removal rate threshold value is detected, if so, the removal rate of the polluted area reaches a preset standard, otherwise, the removal rate of the polluted area does not reach the preset standard.
The surface treatment method of the preferred embodiment generally repeats step S30 twice to achieve the purpose that the removal rate of the contaminated area reaches the preset standard, and the process is simple and efficient.
in some preferred embodiments, after removing the nickel oxide on the contaminated area each time, whether the removal rate of the contaminated area reaches a preset standard is judged. If so, removing the residual soldering flux on the surface of the nickel-plated layer; otherwise, repeating the step 20 until the removal rate of the polluted area reaches the preset standard.
referring to fig. 2, in some preferred embodiments, before performing step S20 repeatedly, the method further includes:
The contaminated area is subjected to a deionized water rinsing process and/or the step S10 is repeated.
In the preferred embodiment, before step S20 is repeated each time, a deionized water cleaning process and/or an organic pollutant removing process are performed to ensure the cleanliness of the nickel oxide surface, which is beneficial to improving the nickel oxide removing effect at a later stage.
It should be noted that although the various steps of the methods of the present disclosure are depicted in the drawings in a particular order, this does not require or imply that these steps must be performed in this particular order, or that all of the depicted steps must be performed, to achieve desirable results. Additionally or alternatively, certain steps may be omitted, multiple steps combined into one step execution, and/or one step broken down into multiple step executions, etc.
Through the above description of the embodiments, those skilled in the art will readily understand that the exemplary embodiments described herein may be implemented by software, or by software in combination with necessary hardware.
The above description is only a preferred embodiment of the application and is illustrative of the principles of the technology employed. It will be appreciated by a person skilled in the art that the scope of the invention as referred to in the present application is not limited to the embodiments with a specific combination of the above-mentioned features, but also covers other embodiments with any combination of the above-mentioned features or their equivalents without departing from the inventive concept. For example, the above features may be replaced with (but not limited to) features having similar functions disclosed in the present application.
Claims (10)
1. A surface treatment method for a nickel-plated layer is characterized in that the surface of the nickel-plated layer is provided with a pollution area, and the surface treatment method comprises the following steps:
Step S10: removing organic contaminants from the contaminated area;
Step S20: after removing the organic contaminants, removing the nickel oxide on the contaminated area.
2. The method for surface treatment of a nickel-plated layer as claimed in claim 1, wherein in step S20, the nickel oxide on the contaminated area is removed by flux.
3. The surface treatment method of a nickel-plated layer according to claim 2, wherein step S20 includes:
And coating the soldering flux on the polluted area to remove the nickel oxide, and heating the soldering flux in the removing process, wherein the heating temperature in the heating process is 100-150 ℃, and the heating time is 30-60 min.
4. The surface treatment method for a nickel-plated layer according to claim 1, wherein in step S10, the organic contaminant is removed by an organic solvent.
5. The method for surface treatment of a nickel-plated layer according to claim 4, wherein the organic solvent is an alcohol.
6. the method of claim 1, wherein the contaminated area is cleaned with deionized water both before and after the removal of the organic contaminants.
7. The surface treatment method for a nickel-plated layer according to claim 1, further comprising, after step S20:
Step S30: and judging whether the removal rate of the polluted area reaches a preset standard, if not, repeating the step S20 until the removal rate of the polluted area reaches the preset standard.
8. The method for surface treatment of a nickel-plated layer as defined in claim 7, further comprising, before repeating step S20 each time:
And performing deionized water cleaning treatment on the polluted area and/or repeating the step S10.
9. The method of claim 2, wherein the flux is a water soluble flux.
10. The method for surface treatment of a nickel-plated layer according to claim 5, wherein the organic solvent is ethanol or isopropanol.
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CN201910838523.6A CN110571135A (en) | 2019-09-05 | 2019-09-05 | surface treatment method of nickel-plated layer |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005150508A (en) * | 2003-11-18 | 2005-06-09 | Sanyo Electric Co Ltd | Method for manufacturing semiconductor device |
CN102446778A (en) * | 2010-10-08 | 2012-05-09 | 北大方正集团有限公司 | Method for improving wire bonding performance |
CN108990310A (en) * | 2018-07-09 | 2018-12-11 | 昆山龙朋精密电子有限公司 | A kind of production technology of the high-precision flexible circuit board for VCM voice coil motor |
CN110193642A (en) * | 2019-06-04 | 2019-09-03 | 北京理工大学 | A kind of welding procedure that regulation scolding tin connector crystal grain is orientated and organizes |
-
2019
- 2019-09-05 CN CN201910838523.6A patent/CN110571135A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005150508A (en) * | 2003-11-18 | 2005-06-09 | Sanyo Electric Co Ltd | Method for manufacturing semiconductor device |
CN102446778A (en) * | 2010-10-08 | 2012-05-09 | 北大方正集团有限公司 | Method for improving wire bonding performance |
CN108990310A (en) * | 2018-07-09 | 2018-12-11 | 昆山龙朋精密电子有限公司 | A kind of production technology of the high-precision flexible circuit board for VCM voice coil motor |
CN110193642A (en) * | 2019-06-04 | 2019-09-03 | 北京理工大学 | A kind of welding procedure that regulation scolding tin connector crystal grain is orientated and organizes |
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