CN110570988A - Three-phase high-temperature superconducting electrified conductor - Google Patents
Three-phase high-temperature superconducting electrified conductor Download PDFInfo
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- CN110570988A CN110570988A CN201910906685.9A CN201910906685A CN110570988A CN 110570988 A CN110570988 A CN 110570988A CN 201910906685 A CN201910906685 A CN 201910906685A CN 110570988 A CN110570988 A CN 110570988A
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- 239000004020 conductor Substances 0.000 title claims abstract description 54
- 239000002826 coolant Substances 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 438
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 65
- 229910052802 copper Inorganic materials 0.000 claims description 65
- 239000010949 copper Substances 0.000 claims description 65
- 230000006641 stabilisation Effects 0.000 claims description 43
- 238000011105 stabilization Methods 0.000 claims description 43
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000011241 protective layer Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 230000000295 complement effect Effects 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 230000007613 environmental effect Effects 0.000 abstract description 4
- 230000005540 biological transmission Effects 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 238000009413 insulation Methods 0.000 description 6
- 238000004804 winding Methods 0.000 description 6
- 239000004743 Polypropylene Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- -1 polypropylene Polymers 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004745 nonwoven fabric Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920002522 Wood fibre Polymers 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000016507 interphase Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 239000002025 wood fiber Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
- H01B12/02—Superconductive or hyperconductive conductors, cables, or transmission lines characterised by their form
- H01B12/06—Films or wires on bases or cores
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
- H01B12/16—Superconductive or hyperconductive conductors, cables, or transmission lines characterised by cooling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
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- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
The application relates to a three-phase high-temperature superconducting electrified conductor. The three-phase high-temperature superconducting current conductor comprises a framework, a plurality of superconducting layers wound on the framework and insulating layers wound on two sides of each superconducting layer. The framework is provided with a micro-flow channel. The cooling medium can directly provide a cold source for each superconducting layer wound on the framework through the micro-flow channel, so that the thermal stability of the three-phase high-temperature superconducting electrified conductor is improved, the environmental temperature of each superconducting layer is reduced under a stable condition, and the current carrying capacity of the three-phase high-temperature superconducting electrified conductor is improved.
Description
Technical Field
the application relates to the technical field of superconducting cables, in particular to a three-phase high-temperature superconducting electrified conductor.
background
The high-temperature superconducting cable has the advantages of low line loss, large transmission capacity, small occupied space of a corridor, environmental friendliness and the like, and provides an efficient, compact, reliable and green electric energy transmission mode for a power grid. Due to the low-voltage and high-current characteristics of the superconducting cable, the superconducting cable has the advantages of reducing the voltage level of a power grid and simplifying the potential of a power grid framework, and has important significance for long-term development and planning of the power grid. The structure of the three-phase coaxial type superconducting alternating current cable sequentially comprises a framework, a three-phase superconductor, an interphase insulation layer, a shielding layer and a low-temperature Dewar pipe from inside to outside.
Because the high-temperature superconducting cable needs to realize superconductivity in a low-temperature environment, liquid nitrogen needs to be introduced into the framework and the low-temperature Dewar pipe to form a channel for the inside to enter and exit. However, when a low-temperature environment is provided to the superconducting layer through liquid nitrogen, the framework needs to be refrigerated first, and then the low-temperature environment is provided to the superconducting layer through heat transfer, so that the thermal stability is relatively poor.
Disclosure of Invention
In view of the above, it is necessary to provide a three-phase high-temperature superconducting current conductor in order to solve the problem of poor thermal stability of the conventional three-phase high-temperature superconducting current conductor.
A three-phase high temperature superconducting current carrying conductor comprising:
the framework is provided with a micro-flow channel;
The first insulating layer is wound on the framework and covers the microfluidic channel;
The first superconducting layer is wound on the first insulating layer by a first preset spiral angle;
The second insulating layer is wound on the first superconducting layer;
the second superconducting layer is wound on the second insulating layer by a second preset spiral angle;
A third insulating layer wound around the second superconducting layer;
The third superconducting layer is wound on the third insulating layer by the first preset spiral angle; and
And the fourth insulating layer is wound on the third superconducting layer.
In one embodiment, the microfluidic channel is one or more of a through hole and a strip groove.
in one embodiment, the framework is provided with a plurality of through holes at intervals, and the through holes are symmetrically distributed on the outer side wall of the framework.
In one embodiment, the framework is further provided with a plurality of strip-shaped grooves at intervals, the strip-shaped grooves are arranged at intervals with the through holes, and the strip-shaped grooves are symmetrically distributed on the side wall of the framework.
in one embodiment, the first predetermined helix angle is complementary to the second predetermined helix angle.
In one embodiment, the method further comprises the following steps:
The first copper stable layer is wound on the first insulating layer, and is positioned between the first insulating layer and the first superconducting layer;
The second copper stable layer is wound on the second insulating layer and is positioned between the second insulating layer and the second superconducting layer; and
And the third copper stable layer is wound on the third insulating layer and is positioned between the third insulating layer and the third superconducting layer.
In one embodiment, the method further comprises the following steps:
The first semi-conductive layer is wound on the framework, and is positioned between the framework and the first insulating layer;
the second semi-conducting layer is wound on the first insulating layer, and is positioned between the first insulating layer and the first copper stable layer;
The third semi-conducting layer is wound on the first superconducting layer, and is positioned between the second insulating layer and the first superconducting layer;
The fourth semi-conducting layer is wound on the second insulating layer and is positioned between the second insulating layer and the second copper stable layer;
A fifth semiconducting layer wound around the second superconducting layer, the fifth semiconducting layer being located between the third insulating layer and the second superconducting layer;
a sixth semiconducting layer wound around the third insulating layer and located between the third insulating layer and the third copper stabilization layer;
A seventh semiconductive layer wound around the third superconducting layer, the seventh semiconductive layer being located between the fourth insulating layer and the third superconducting layer; and
And the eighth semi-conducting layer is wound on the fourth insulating layer, and the eighth semi-conducting layer and the seventh semi-conducting layer are positioned on two sides of the fourth insulating layer.
in one embodiment, the method further comprises the following steps:
And the copper shielding layer is wound on the eighth semi-conducting layer.
In one embodiment, the copper shield layer is grounded at one end or both ends to form a faraday cage.
In one embodiment, the method further comprises the following steps:
And the protective layer is wound on the copper shielding layer.
In one embodiment, the skeleton is a stainless steel annular corrugated pipe having a central passage through which a cooling medium is passed, the cooling medium being liquid nitrogen.
The three-phase high-temperature superconducting current conductor comprises a framework, a plurality of superconducting layers wound on the framework and insulating layers wound on two sides of each superconducting layer. The framework is provided with a micro-flow channel. The cooling medium can directly provide a cold source for each superconducting layer wound on the framework through the micro-flow channel, so that the thermal stability of the three-phase high-temperature superconducting electrified conductor is improved, the environmental temperature of each superconducting layer is reduced under a stable condition, and the current carrying capacity of the three-phase high-temperature superconducting electrified conductor is improved.
Drawings
fig. 1 is a schematic structural diagram of a three-phase high-temperature superconducting current-carrying conductor according to an embodiment of the present application;
Fig. 2 is a schematic diagram illustrating an arrangement structure of a plurality of superconducting layers according to an embodiment of the present application;
Fig. 3 is a schematic cross-sectional structure view of a framework in a three-phase high-temperature superconducting current-carrying conductor according to an embodiment of the present application;
FIG. 4 is a schematic cross-sectional view illustrating a structure of a framework in a three-phase high-temperature superconducting current-carrying conductor according to an embodiment of the present application;
FIG. 5 is a schematic cross-sectional view illustrating a structure of a framework in a three-phase high-temperature superconducting current-carrying conductor according to an embodiment of the present application;
fig. 6 is a schematic structural diagram of a three-phase high-temperature superconducting current-carrying conductor according to an embodiment of the present application.
Description of the main element reference numerals
three-phase high-temperature superconducting current-carrying conductor 10
Skeleton 100
Microfluidic channel 110
through-hole 111
strip groove 112
First insulating layer 210
Second insulating layer 220
Third insulating layer 230
Fourth insulating layer 240
the fifth insulating layer 250
Sixth insulating layer 260
the seventh insulating layer 270
First superconducting layer 310
Second superconducting layer 320
Third superconducting layer 330
Fourth superconducting layer 340
fifth superconducting layer 350
sixth superconducting layer 360
First copper stabilization layer 410
Second copper stabilization layer 420
Third copper stabilization layer 430
Fourth copper stabilization layer 440
fifth copper stabilization layer 450
Sixth copper stabilization layer 460
First semiconductor layer 511
Second semi-conducting layer 512
Third semiconductive layer 521
A fourth semiconducting layer 522
A fifth semi-conductive layer 531
Sixth semiconducting layer 532
A seventh semiconductive layer 541
Eighth semiconductive layer 542
A ninth semiconductive layer 551
A tenth semiconductor layer 552
An eleventh semiconductive layer 561
The twelfth semiconductive layer 562
A thirteenth semiconducting layer 571
a fourteenth semiconductive layer 572
Copper shield layer 600
Protective layer 700
Detailed Description
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, embodiments accompanying the present application are described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. This application is capable of embodiments in many different forms than those described herein and those skilled in the art will be able to make similar modifications without departing from the spirit of the application and it is therefore not intended to be limited to the embodiments disclosed below.
It will be understood that when an element is referred to as being "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
referring to fig. 1, an embodiment of the present application provides a three-phase high-temperature superconducting current conductor 10. The three-phase high-temperature superconducting conductor 10 at least comprises a framework 100, four insulating layers and three superconducting layers. The four insulating layers are a first insulating layer 210, a second insulating layer 220, a third insulating layer 230, and a fourth insulating layer 240. The three superconductive layers are a first superconductive layer 310, a second superconductive layer 320, and a third superconductive layer 330.
The frame 100 is provided with a microfluidic channel 110. The first insulating layer 210 is wound around the skeleton 100, and the first insulating layer 210 covers the microfluidic channel 110. The first superconducting layer 310 is wound around the first insulating layer 210 at a first predetermined helix angle. The second insulating layer 220 is wound around the first superconducting layer 310. The second superconducting layer 320 is wound around the second insulating layer 220 at a second predetermined spiral angle. To reduce the axial magnetic field, the first and second predetermined helix angles are complementary with respect to normal. The normal is a line perpendicular to the length direction of the frame 100. The third insulating layer 230 is wound around the second superconducting layer 320. The third superconducting layer 330 is wound around the third insulating layer 230 at the first predetermined spiral angle. The fourth insulating layer 240 is wound around the third superconducting layer 330. The winding direction of each superconducting layer is shown in fig. 2.
the innermost side of the three-phase high-temperature superconducting conductor 10 is the skeleton 100 for winding a superconducting layer and serving as a refrigerating working medium channel. The carcass 100 may have some flexibility and rigidity due to some degree of bending of the cables during transportation and installation. The frame 100 may be a corrugated tube made of stainless steel. The stainless steel annular corrugated pipe is provided with a central channel, the central channel passes through a cooling medium, and the cooling medium is liquid nitrogen. Since the frame 100 is required to be a refrigerant passage, the frame 100 is a corrugated pipe with a hollow interior. The cooling medium removes heat by flowing inside the former 100 to provide a low temperature environment to the superconducting layers wound around the former 100. However, when a low temperature environment is provided to the superconducting layer through the cooling medium, the skeleton 100 needs to be cooled first, and then a low temperature environment is provided to the superconducting layer through heat transfer, and thermal stability is relatively poor. In order to improve the thermal stability of the three-phase high-temperature superconducting current conductor 10, a micro-flow channel 110 may be formed on the skeleton 100. That is, a through hole or a groove is formed on the sidewall of the frame 100. The microfluidic channel 100 may be one piece. The microfluidic channel 100 may be a plurality of channels as long as the supporting function of the frame 100 is not affected. At this time, when the cooling medium flows in the former 100, the cooling medium may contact the first superconducting layer 310 wound on the former 100 through the micro flow channel 110, so as to improve a cooling effect.
insulation structures are required to be wound between the skeleton 100 and the first superconducting layer 310, between adjacent superconducting layers and outside the third superconducting layer 330 to isolate the ground layer from the superconducting layers in the current-carrying conductor. Because in this application three-phase high temperature surpasses and switches on conductance 10 and be low temperature insulation structure, but low temperature resistant material need be chooseed for use to the insulating layer. The thickness of each insulating layer can be designed according to the withstand voltage class. In an alternative embodiment, the insulating layer may be polypropylene laminated paper (PPLP). The polypropylene laminated paper is of a three-layer structure, the outer two layers are wood fiber paper, and the inner layer is polypropylene.
in this embodiment, the three-phase high-temperature superconducting current conductor 10 includes a skeleton 100, a plurality of superconducting layers wound around the skeleton 100, and insulating layers wound around two sides of each superconducting layer. The skeleton 100 is provided with a microfluidic channel 110. The cooling medium can directly provide a cold source for each superconducting layer wound around the skeleton 100 through the micro-flow channel 110, so that the thermal stability of the three-phase high-temperature superconducting electrified conductor 10 is improved, and the environmental temperature of each superconducting layer is reduced under a steady-state condition, so that the current carrying capacity of the three-phase high-temperature superconducting electrified conductor is improved.
in one embodiment, the microfluidic channel 110 is one or more of a through hole 111 and a strip groove 112. The shape and number of the through holes 111 are not limited as long as the cooling medium can be surely flowed into the outer side surface of the frame through the through holes 111 without affecting the supporting function of the frame 100. Likewise, the shape and number of the grooves 112 are not limited as long as the cooling medium can flow into the outer side of the frame through the grooves 112 without affecting the supporting function of the frame 100.
in an alternative embodiment, referring to FIG. 3, the microfluidic channel 110 includes only a through hole 111. Namely, a plurality of through holes 111 are formed at intervals in the frame 100. In order to ensure the supporting stability of the framework 100, the through holes 111 are symmetrically distributed on the outer side wall of the framework 100.
In an alternative embodiment, referring to FIG. 4, the microfluidic channel 110 includes only stripe grooves 112. Namely, a plurality of the strip-shaped grooves 112 are formed at intervals on the framework 100. In order to ensure the supporting stability of the framework 100, the strip-shaped grooves 112 are symmetrically distributed on the outer side wall of the framework 100.
in an alternative embodiment, referring to fig. 5, the microfluidic channel 110 may include both the through hole 11 and the stripe groove 112. Namely, a plurality of strip-shaped grooves 112 and a plurality of through holes 111 are formed on the framework 100 at intervals. For example, a plurality of rows and a plurality of columns of the through holes 111 are symmetrically formed in the side wall of the framework 100, and the strip-shaped groove 112 is formed between adjacent rows of the side wall of the framework 100.
referring to fig. 6, in one embodiment, the three-phase high-temperature superconducting current conductor 10 includes at least a former 100, six insulating layers, and five superconducting layers. The six insulating layers are a first insulating layer 210, a second insulating layer 220, a third insulating layer 230, a fourth insulating layer 240, a fifth insulating layer 250 and a sixth insulating layer 260. The five superconducting layers are a first superconducting layer 310, a second superconducting layer 320, a third superconducting layer 330, a fourth superconducting layer 340, and a fifth superconducting layer 350.
The first insulating layer 210 is wound around the frame 100. The first superconducting layer 310 is wound around the first insulating layer 210 at a first predetermined helix angle. The second insulating layer 220 is wound around the first superconducting layer 310. The second superconducting layer 320 is wound around the second insulating layer 220 at a second predetermined spiral angle. To reduce the axial magnetic field, the first and second predetermined helix angles are complementary with respect to normal. The normal is a line perpendicular to the length direction of the frame 100. The third insulating layer 230 is wound around the second superconducting layer 320. The third superconducting layer 330 is wound around the third insulating layer 230 at the first predetermined spiral angle. The fourth insulating layer 240 is wound around the third superconducting layer 330. The fourth superconducting layer 340 is wound around the fourth insulating layer 240 at the second predetermined spiral angle. The fifth insulating layer 250 is wound around the fourth superconducting layer 340. The fifth superconducting layer 350 is wound around the fifth insulating layer 250 at the first predetermined spiral angle. The sixth insulating layer 260 is wound around the fifth superconducting layer 350.
In this embodiment, the three-phase high-temperature superconducting current conductor 10 includes a skeleton 100, five superconducting layers wound around the skeleton, and insulating layers wound around two sides of each superconducting layer. In the case where the transmission capacity is satisfied, the three-phase high-temperature superconducting electrified conductor 10 may have three superconducting layers as three phases of the transmission process. The other two superconducting layers can be shielded and grounded at the moment. In the case of a high requirement on the transmission capacity, the three-phase high-temperature superconducting electrified conductor 10 may further use two superconducting layers of the five superconducting layers as one phase in the transmission process, another two superconducting layers as another phase, and the last remaining superconducting layer as a third phase. The structure of the three-phase high-temperature superconducting electrified conductor has diversity in use functions.
In one embodiment, the three-phase high temperature superconducting electrified conductor 10 further includes a sixth superconducting layer 360 and a seventh insulating layer 270. That is, at this time, the three-phase high-temperature superconducting current conductor 10 includes six superconducting layers and insulating layers provided on both sides of each of the superconducting layers. The sixth superconducting layer 360 is wound around the sixth insulating layer 260 at the second predetermined spiral angle. The seventh insulating layer 270 is wound around the sixth superconducting layer 360 at a predetermined spiral angle.
In the present embodiment, the three-phase high-temperature superconducting electrified conductor 10 includes six superconducting layers. When the transmissible capacity of the single superconducting layer is larger than or equal to the actual pre-transmission capacity, three superconducting layers of the six superconducting layers are selected as three-phase conducting layers in one transmission process, and the rest three superconducting layers are selected as three-phase conducting layers in the other transmission process. When the transportable capacity of the single superconducting layer is smaller than the actual pre-transport capacity, two superconducting layers of the six superconducting layers are selected as a first phase conducting layer in the transport process, two superconducting layers of the remaining four superconducting layers are selected as a second phase conducting layer in the transport process, and the other remaining two superconducting layers are selected as a third phase conducting layer in the transport process. The structure of the three-phase high-temperature superconducting electrified conductor has diversity in use functions.
in one embodiment, the three-phase high temperature superconducting electrical conductor 10 further comprises a plurality of copper stabilization layers. The multiple copper stabilization layers are a first copper stabilization layer 410, a second copper stabilization layer 420, a third copper stabilization layer 430, a fourth copper stabilization layer 440, a fifth copper stabilization layer 450, and a sixth copper stabilization layer 460. The first copper stabilization layer 410 is wound around the first insulating layer 210, and the first copper stabilization layer 410 is located between the first insulating layer 210 and the first superconducting layer 310. The second copper stabilization layer 420 is wound around the second insulating layer 220, and the second copper stabilization layer 420 is located between the second insulating layer 220 and the second superconducting layer 320. The third copper stabilization layer 430 is wound around the third insulating layer 230, and the third copper stabilization layer 430 is located between the third insulating layer 230 and the third superconducting layer 330. The fourth copper stabilization layer 440 is wound around the fourth insulating layer 240, and the fourth copper stabilization layer 440 is located between the fourth insulating layer 240 and the fourth superconducting layer 340. The fifth copper stabilization layer 450 is wound around the fifth insulating layer 250, and the fifth copper stabilization layer 450 is located between the fifth insulating layer 250 and the fifth superconducting layer 350. The sixth copper stabilization layer 460 is wound around the sixth insulating layer 260, and the sixth copper stabilization layer 460 is located between the sixth insulating layer 260 and the sixth superconducting layer 360.
in this embodiment, the plurality of copper stabilization layers may be copper layers. During operation of the cable, once the insulation between the superconducting layers in the three-phase high-temperature superconducting current conductor 10 and between the superconducting layers and the ground is damaged, a large short-circuit fault current flows through the conductor layers, so that the temperature rises rapidly and further the insulation and the sheath are threatened. The laying of the multiple copper stabilizing layers can prevent fault current from causing larger damage to the cable body. The multilayer copper stabilization layer can smoothly pass a huge fault current in a short time without generating too large temperature rise. And winding the superconducting layers at a certain angle on the surfaces of the multiple copper stable layers to form spiral structures. When the number of the superconducting strips is too large, multilayer winding can be carried out, and a winding layer can be added between the superconducting layers to ensure that the winding surface is as flat as possible.
In one embodiment, the three-phase high temperature superconducting electrical conductor 10 further comprises a plurality of semiconducting layers. The multilayered semiconductive layer includes a first semiconductive layer 511, a second semiconductive layer 512, a third semiconductive layer 521, a fourth semiconductive layer 522, a fifth semiconductive layer 531, a sixth semiconductive layer 532, a seventh semiconductive layer 541, an eighth semiconductive layer 542, a ninth semiconductive layer 551, a tenth semiconductive layer 552, an eleventh semiconductive layer 561, a twelfth semiconductive layer 562, a thirteenth semiconductive layer 571, and a fourteenth semiconductive layer 572.
The first semiconductor layer 511 is wound around the frame 100, and the first semiconductor layer 511 is located between the frame 100 and the first insulating layer 210. The second semiconducting layer 512 is wound around the first insulating layer 210, and the second semiconducting layer 512 is located between the first insulating layer 210 and the first copper stabilization layer 410. The third semiconducting layer 521 is wound around the first superconducting layer 310, and the third semiconducting layer 521 is located between the second insulating layer 220 and the first superconducting layer 310. The fourth semiconducting layer 522 is wound around the second insulating layer 220, and the fourth semiconducting layer 522 is located between the second insulating layer 220 and the second copper stabilization layer 420. The fifth semiconducting layer 531 is wound around the second superconducting layer 320, and the fifth semiconducting layer 531 is located between the third insulating layer 230 and the second superconducting layer 320. The sixth semiconducting layer 532 is wound around the third insulating layer 230, and the sixth semiconducting layer 532 is located between the third insulating layer 230 and the third copper stabilization layer 430. The seventh semiconductive layer 541 is wound around the third superconducting layer 330, and the seventh semiconductive layer 541 is located between the fourth insulating layer 240 and the third superconducting layer 330. The eighth semiconducting layer 542 is wound around the fourth insulating layer 240, and the eighth semiconducting layer 542 is located between the fourth insulating layer 240 and the fourth copper stabilization layer 440. The ninth semiconductive layer 551 is wound around the fourth superconducting layer 340, and the ninth semiconductive layer 551 is located between the fifth insulating layer 250 and the fourth superconducting layer 340. The tenth semiconductor layer 552 is wound around the fifth insulating layer 250, and the tenth semiconductor layer 552 is located between the fifth insulating layer 250 and the fifth copper stable layer 450. The eleventh semiconductive layer 561 is wound around the fifth superconducting layer 350, and the eleventh semiconductive layer 561 is located between the sixth insulating layer 260 and the fifth superconducting layer 350. The twelfth semiconductive layer 562 is wound around the sixth insulating layer 260, and the twelfth semiconductive layer 562 is located between the sixth insulating layer 260 and the sixth copper stabilization layer 460. The thirteenth semiconducting layer 571 is wound around the sixth superconducting layer 360, and the thirteenth semiconducting layer 571 is located between the seventh insulating layer 270 and the sixth superconducting layer 360. The fourteenth semiconductor layer 572 is wound around the seventh insulating layer 270, and the fourteenth semiconductor layer 572 and the thirteenth semiconductor layer 571 are respectively located on two sides of the seventh insulating layer 270.
in this embodiment, in order to prevent the insulation breakdown caused by the over-concentration of local charges, a semi-conducting layer is wound around each of the inside and outside of the insulating layer to make the electric field uniform. The semiconducting layer may be carbon paper.
In one embodiment, the three-phase high temperature superconducting electrical conductor 10 further includes a copper shield layer 600 and a protective layer 700.
The copper shield layer 600 is wound around the eighth semiconducting layer 542. The copper shield layer 600 is grounded at one end or both ends to form a faraday cage. The protection layer 700 is wound around the copper shield layer 600. The protective layer 700 is a non-woven fabric. The copper shield layer 600 is disposed outside the three-phase high-temperature superconducting current conductor 10 and used for electromagnetic shielding and ground protection. The non-woven fabric protective layer is arranged on the outer side of the copper shielding layer 600 and used for protecting the structure of the whole three-phase high-temperature superconducting current conductor 10.
the technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (11)
1. A three-phase high temperature superconducting current conductor, comprising:
the framework (100), the framework (100) is provided with a microfluidic channel (110);
The first insulating layer (210) is wound on the framework (100), and the first insulating layer (210) covers the microfluidic channel (110);
A first superconducting layer (310) wound around the first insulating layer (210) at a first predetermined helix angle;
A second insulating layer (220) wound around the first superconducting layer (310);
a second superconducting layer (320) wound around the second insulating layer (220) at a second predetermined helix angle;
a third insulating layer (230) wound around the second superconducting layer (320);
a third superconducting layer (330) wound around the third insulating layer (230) at the first predetermined helix angle; and
And a fourth insulating layer (240) wound around the third superconducting layer (330).
2. The three-phase high-temperature superconducting current-carrying conductor according to claim 1, wherein the microfluidic channel (110) is one or more of a through hole (111) and a strip-shaped groove (112).
3. the three-phase high-temperature superconducting current-carrying conductor according to claim 2, wherein the skeleton (100) is provided with a plurality of through holes (111) at intervals, and the through holes (111) are symmetrically distributed on the outer side wall of the skeleton (100).
4. the three-phase high-temperature superconducting current-carrying conductor according to claim 3, wherein the skeleton (100) is further provided with a plurality of strip-shaped grooves (112) at intervals, the strip-shaped grooves and the through holes (111) are arranged at intervals, and the strip-shaped grooves (112) are symmetrically distributed on the side wall of the skeleton (100).
5. the three-phase high temperature superconducting current carrying conductor of claim 1, wherein the first predetermined pitch angle is complementary to the second predetermined pitch angle.
6. the three-phase high temperature superconducting current-carrying conductor of claim 5, further comprising:
A first copper stabilization layer (410) wound around the first insulating layer (210), and the first copper stabilization layer (410) is located between the first insulating layer (210) and the first superconducting layer (310);
A second copper stabilization layer (420) wound around the second insulating layer (220), the second copper stabilization layer (420) being positioned between the second insulating layer (220) and the second superconducting layer (320); and
a third copper stabilization layer (430) wound around the third insulating layer (230), and the third copper stabilization layer (430) is located between the third insulating layer (230) and the third superconducting layer (330).
7. The three-phase high temperature superconducting current-carrying conductor of claim 6, further comprising:
The first semi-conductive layer (511) is wound on the framework (100), and the first semi-conductive layer (511) is positioned between the framework (100) and the first insulating layer (210);
A second semiconducting layer (512) wound around the first insulating layer (210), and the second semiconducting layer (512) is between the first insulating layer (210) and the first copper stabilization layer (410);
A third semiconducting layer (521) wound around the first superconducting layer (310), the third semiconducting layer (521) being located between the second insulating layer (220) and the first superconducting layer (310);
A fourth semiconducting layer (522) wound around the second insulating layer (220), and the fourth semiconducting layer (522) is between the second insulating layer (220) and the second copper stabilization layer (420);
A fifth semiconducting layer (531) wound around the second superconducting layer (320), the fifth semiconducting layer (531) being located between the third insulating layer (230) and the second superconducting layer (320);
A sixth semiconducting layer (532) wound around the third insulating layer (230), and the sixth semiconducting layer (532) is between the third insulating layer (230) and the third copper stabilization layer (430);
A seventh semiconductive layer (541) wound around the third superconducting layer (330), the seventh semiconductive layer (541) being located between the fourth insulating layer (240) and the third superconducting layer (330); and
And an eighth semi-conductive layer (542) wound around the fourth insulating layer (240), wherein the eighth semi-conductive layer (542) and the seventh semi-conductive layer (541) are located on both sides of the fourth insulating layer (240).
8. The three-phase high temperature superconducting current-carrying conductor of claim 7, further comprising:
and a copper shield layer (600) wound around the eighth semiconducting layer (542).
9. the three-phase high temperature superconducting current conductor of claim 8, wherein the copper shield layer (600) is grounded at one or both ends to form a faraday cage.
10. The three-phase high temperature superconducting current-carrying conductor of claim 9, further comprising:
And the protective layer (700) is wound on the copper shielding layer (600).
11. the three-phase high-temperature superconducting current-carrying conductor according to claim 10, wherein the former (100) is a stainless steel annular corrugated tube having a central passage through which a cooling medium is passed, the cooling medium being liquid nitrogen.
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