CN110556295B - Semiconductor device and forming method - Google Patents
Semiconductor device and forming method Download PDFInfo
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- CN110556295B CN110556295B CN201910919825.6A CN201910919825A CN110556295B CN 110556295 B CN110556295 B CN 110556295B CN 201910919825 A CN201910919825 A CN 201910919825A CN 110556295 B CN110556295 B CN 110556295B
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- fluorine
- silicate glass
- glass film
- doped silicate
- film layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
Abstract
The invention provides a semiconductor device and a forming method thereof, wherein the forming method of the semiconductor device comprises the following steps: providing a semiconductor substrate; forming a fluorine-doped silicate glass film layer on a semiconductor substrate; and pretreating the surface of the fluorine-doped silicate glass film layer to reduce the precipitation of fluorine ions in the fluorine-doped silicate glass film layer. According to the invention, the surface of the fluorine-doped silicate glass film layer is pretreated, so that dangling bonds on the surface of the fluorine-doped silicate glass film layer are saturated by oxygen atoms in hydrogen peroxide, the surface of the fluorine-doped silicate glass film layer is passivated, the speed of separating out fluorine ions in the fluorine-doped silicate glass film layer is further reduced, and the waiting time of the fluorine-doped silicate glass film layer between FSG deposition, chemical mechanical grinding and subsequent covering layer formation is not required to be controlled, so that the crystal defects are improved, the reliability of a device is improved, meanwhile, the reworking or cleaning procedures are reduced, the process time is reduced, and the process efficiency is improved.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing, and more particularly, to a semiconductor device and a method of forming the same.
Background
Fluorosilicone Glass (FSG) is widely applied in the back-end technology of integrated circuit manufacture, and has low dielectric constant, good pore-filling performance and stable mechanical constant, and gradually replaces undoped silicon oxide (USG) to become an interlayer isolated dielectric layer. However, due to the hydrophilic property of the FSG, moisture in the air is easily absorbed to generate crystal defects (crystal defects), which affects the reliability of the device.
The conventional solution is to control the waiting time between the deposition of FSG, the cmp and the formation of the subsequent capping layer, thereby reducing the time interval between the steps of the fabrication process, but if the waiting time exceeds the time limit, the above-mentioned drawbacks still occur, and therefore, the cleaning process or the rework process needs to be added.
Disclosure of Invention
The present invention is directed to a semiconductor device and a method for forming the same, which can improve the occurrence of crystal defects and improve the reliability of the device.
In order to solve the above problems, the present invention provides a method for forming a semiconductor device, comprising the steps of:
providing a semiconductor substrate;
forming a fluorine-doped silicate glass film layer on the semiconductor substrate; and
and pretreating the surface of the fluorine-doped silicate glass film layer to reduce the precipitation of fluorine ions in the fluorine-doped silicate glass film layer.
Optionally, the step of pretreating the surface of the fluorine-doped silicate glass film layer to reduce fluorine ion precipitation in the fluorine-doped silicate glass film layer specifically includes the following steps:
at normal temperature, the surface of the fluorine-doped silicate glass film layer is pretreated by adopting a mixed liquid of ammonia water and hydrogen peroxide, so that dangling bonds on the surface of the fluorine-doped silicate glass film layer are saturated by oxygen atoms in the hydrogen peroxide, and the separation of fluorine ions in the fluorine-doped silicate glass film layer is reduced.
Furthermore, the semiconductor substrate further comprises a metal layer and a dielectric layer, the metal layer and the dielectric layer are sequentially formed on the semiconductor substrate, and the fluorine-doped silicate glass film layer is located on the dielectric layer.
Further, the material of the metal layer comprises metal aluminum.
Furthermore, the dielectric layer is formed by high-density plasma chemical vapor deposition, and the material of the dielectric layer comprises silicon dioxide.
Further, the step of forming the fluorine-doped silicate glass film layer on the semiconductor substrate specifically comprises the following steps:
and depositing the fluorine-doped silicate glass film layer on the dielectric layer in a chemical vapor deposition mode.
Furthermore, the step of depositing the fluorine-doped silicate glass film layer on the dielectric layer by a chemical vapor deposition method comprises the following steps:
and forming the fluorine-doped silicate glass film layer on the dielectric layer by high-density plasma chemical vapor deposition.
Furthermore, after the surface of the fluorine-doped silicate glass film layer is pretreated to reduce the precipitation of fluorine ions in the fluorine-doped silicate glass film layer, the method further comprises the following steps:
and performing a chemical mechanical polishing process on the fluorine-doped silicate glass film layer to planarize the surface of the fluorine-doped silicate glass film layer.
Furthermore, after performing the chemical mechanical polishing process on the fluorine-doped silicate glass film layer, the method further comprises:
and forming a covering layer on the fluorine-doped silicate glass film layer.
The invention also provides a semiconductor device prepared by the forming method of the semiconductor device.
Compared with the prior art, the method has the following beneficial effects:
the invention provides a semiconductor device and a forming method thereof, wherein the forming method of the semiconductor device comprises the following steps: providing a semiconductor substrate; forming a fluorine-doped silicate glass film layer on the semiconductor substrate; and pretreating the surface of the fluorine-doped silicate glass film layer to reduce the precipitation of fluorine ions in the fluorine-doped silicate glass film layer. According to the invention, the surface of the fluorine-doped silicate glass film layer is pretreated, so that dangling bonds on the surface of the fluorine-doped silicate glass film layer are saturated by oxygen atoms in hydrogen peroxide, the surface of the fluorine-doped silicate glass film layer is passivated, the speed of separating out fluorine ions in the fluorine-doped silicate glass film layer is further reduced, and the waiting time of the fluorine-doped silicate glass film layer between FSG deposition, chemical mechanical grinding and subsequent covering layer formation is not required to be controlled, so that the crystal defects are improved, the reliability of a device is improved, the reworking or cleaning procedures are reduced, the process time is reduced, and the process efficiency is improved.
Drawings
Fig. 1 is a flow chart illustrating a method for forming a semiconductor device according to an embodiment of the invention.
Detailed Description
A semiconductor device and method of forming the present invention will be described in further detail below. The present invention will now be described in more detail with reference to the accompanying drawings, in which preferred embodiments of the invention are shown, it being understood that one skilled in the art may modify the invention herein described while still achieving the advantageous effects of the invention. Accordingly, the following description should be construed as broadly as possible to those skilled in the art and not as limiting the invention.
In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. It will of course be appreciated that in the development of any such actual embodiment, numerous implementation-specific details must be set forth in order to achieve the developer's specific goals, such as compliance with system-related and business-related constraints, which will vary from one implementation to another. In addition, it is believed that such a development effort might be complex and time-consuming, but would nevertheless be a routine undertaking for those of ordinary skill in the art.
In order to make the objects and features of the present invention more comprehensible, embodiments of the present invention are described in detail below with reference to the accompanying drawings. It is to be noted that the drawings are in a very simplified form and are all used in a non-precise ratio for the purpose of facilitating and distinctly aiding in the description of the embodiments of the invention.
Fig. 1 is a schematic flow chart illustrating a method for forming a semiconductor device according to this embodiment. As shown in fig. 1, the method comprises the steps of:
step S10: providing a semiconductor substrate;
step S20: forming a fluorine-doped silicate glass film layer on the semiconductor substrate;
step S30: and pretreating the surface of the fluorine-doped silicate glass film layer to reduce the precipitation of fluorine ions in the fluorine-doped silicate glass film layer.
A method of forming a semiconductor device disclosed in this embodiment will be described in more detail below.
Step S10 is performed first to provide a semiconductor substrate. The semiconductor substrate may be any substrate known to those skilled in the art for supporting a component of a semiconductor integrated circuit, and may be a bare chip or a wafer processed by an epitaxial growth process, and in detail, the semiconductor substrate may be, for example, a silicon-on-insulator (SOI) substrate, a bulk silicon (bulk silicon) substrate, a germanium substrate, a silicon-germanium substrate, an indium phosphide (InP) substrate, a gallium arsenide (GaAs) substrate, or a germanium-on-insulator substrate. As an example, a metal layer and a dielectric layer may be sequentially formed on the semiconductor substrate, the metal layer is made of, for example, aluminum metal, and the dielectric layer is formed by, for example, HDP CVD (high density plasma chemical vapor deposition), and the dielectric layer is made of, for example, silicon dioxide, in order to obtain a uniform non-porous insulating layer to isolate and protect the metal layer from other metal layers above the metal layer.
Then, step S20 is performed to form a fluorine-doped silicate glass film layer on the semiconductor substrate. In this step, a low dielectric material is deposited on the dielectric layer, for example, by a chemical vapor deposition method: FSG (fluorinated silicone glass). Specifically, the method comprises the following steps: the fluorine-doped silicate glass film layer is formed on the dielectric layer by, for example, HDP CVD (high density plasma chemical vapor deposition).
And step S30 is executed, the surface of the fluorine-doped silicate glass film layer is pretreated, so that the fluorine ion precipitation in the fluorine-doped silicate glass film layer is reduced.
In the step, ammonia water and hydrogen peroxide (H) are adopted at normal temperature2O2) The mixed liquid pretreats the surface of the fluorine-doped silicate glass film layer, so that dangling bonds on the surface of the fluorine-doped silicate glass film layer are saturated by oxygen atoms in hydrogen peroxide, the surface of the fluorine-doped silicate glass film layer is passivated, the speed of separating out fluorine ions in the fluorine-doped silicate glass film layer is reduced, and the waiting time of the fluorine-doped silicate glass film layer between FSG deposition, chemical mechanical grinding and subsequent covering layer formation is not required to be controlled, so that the crystal defects are improved, the reliability of a device is improved, the reworking or cleaning procedures are reduced, the process time is reduced, and the process efficiency is improved.
According to experiments, the surface of the fluorine-doped silicate glass film layer which is not pretreated is subjected to precipitation of a large amount of fluorine ions when the waiting time exceeds 25 hours; when the waiting time of the surface of the pretreated fluorine-doped silicate glass film layer exceeds 120 hours, the phenomenon that fluorine ions in the fluorine-doped silicate glass film layer are basically not separated out occurs.
And then, carrying out a chemical mechanical polishing process on the fluorine-doped silicate glass film layer to planarize the surface of the fluorine-doped silicate glass film layer.
Next, a capping layer is formed on the fluorine-doped silicate glass film layer, for example, USG (undoped silicate glass) is formed on the fluorine-doped silicate glass film layer by HDP CVD (high density plasma chemical vapor deposition).
The embodiment also provides a semiconductor device prepared by the method, wherein the semiconductor device comprises a semiconductor substrate and a fluorine-doped silicate glass film layer formed on the semiconductor substrate, dangling bonds on the surface of the fluorine-doped silicate glass film layer are saturated by oxygen atoms, so that the surface of the fluorine-doped silicate glass film layer is passivated, the speed of fluorine ion precipitation in the passivated fluorine-doped silicate glass film layer is very low, and the waiting time of the fluorine-doped silicate glass film layer between FSG deposition, chemical mechanical grinding and subsequent covering layer formation is not required to be controlled, so that the crystal defects are improved, the reliability of the device is improved, meanwhile, the reworking or cleaning procedures are reduced, the process time is shortened, and the process efficiency is improved.
In summary, the present invention provides a semiconductor device and a forming method thereof, wherein the forming method of the semiconductor device comprises the following steps: providing a semiconductor substrate; forming a fluorine-doped silicate glass film layer on the semiconductor substrate; and pretreating the surface of the fluorine-doped silicate glass film layer to reduce the precipitation of fluorine ions in the fluorine-doped silicate glass film layer. According to the invention, the surface of the fluorine-doped silicate glass film layer is pretreated, so that dangling bonds on the surface of the fluorine-doped silicate glass film layer are saturated by oxygen atoms in hydrogen peroxide, the surface of the fluorine-doped silicate glass film layer is passivated, the speed of separating out fluorine ions in the fluorine-doped silicate glass film layer is further reduced, and the waiting time of the fluorine-doped silicate glass film layer between FSG deposition, chemical mechanical grinding and subsequent covering layer formation is not required to be controlled, so that the crystal defects are improved, the reliability of a device is improved, the reworking or cleaning procedures are reduced, the process time is reduced, and the process efficiency is improved.
In addition, unless otherwise specified or indicated, the description of the terms "first" and "second" in the specification is only used for distinguishing various components, elements, steps and the like in the specification, and is not used for representing logical relationships or sequential relationships among the various components, elements, steps and the like. It is to be understood that while the present invention has been described in conjunction with the preferred embodiments thereof, it is not intended to limit the invention to those embodiments. It will be apparent to those skilled in the art from this disclosure that many changes and modifications can be made, or equivalents modified, in the embodiments of the invention without departing from the scope of the invention. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention, unless the contents of the technical solution of the present invention are departed.
Claims (9)
1. A method of forming a semiconductor device, the method comprising:
providing a semiconductor substrate;
forming a fluorine-doped silicate glass film layer on the semiconductor substrate; and
at normal temperature, the surface of the fluorine-doped silicate glass film layer is pretreated by adopting a mixed liquid of ammonia water and hydrogen peroxide, so that dangling bonds on the surface of the fluorine-doped silicate glass film layer are saturated by oxygen atoms in the hydrogen peroxide, and the separation of fluorine ions in the fluorine-doped silicate glass film layer is reduced.
2. The method of claim 1, further comprising a metal layer and a dielectric layer formed on the semiconductor substrate in sequence, wherein the fluorine-doped silicate glass film layer is located on the dielectric layer.
3. The method of forming of claim 2, wherein a material of the metal layer comprises metallic aluminum.
4. The method of claim 3, wherein the dielectric layer is formed by high density plasma chemical vapor deposition, and wherein a material of the dielectric layer comprises silicon dioxide.
5. The method of claim 4, wherein forming the fluorine-doped silicate glass film layer on the semiconductor substrate comprises:
and depositing the fluorine-doped silicate glass film layer on the dielectric layer in a chemical vapor deposition mode.
6. The method of claim 5, wherein depositing the FSG film on the dielectric layer by CVD comprises:
and forming the fluorine-doped silicate glass film layer on the dielectric layer by high-density plasma chemical vapor deposition.
7. The method of forming as claimed in claim 6, further comprising, after pre-treating the surface of the FSG film to reduce fluorine ion precipitation in the FSG film:
and performing a chemical mechanical polishing process on the fluorine-doped silicate glass film layer to planarize the surface of the fluorine-doped silicate glass film layer.
8. The method of claim 7, wherein the step of performing a chemical mechanical polishing process on the FSG film further comprises:
and forming a covering layer on the fluorine-doped silicate glass film layer.
9. A semiconductor device produced by the formation method according to any one of claims 1 to 8.
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| CN201910919825.6A CN110556295B (en) | 2019-09-26 | 2019-09-26 | Semiconductor device and forming method |
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| CN201910919825.6A CN110556295B (en) | 2019-09-26 | 2019-09-26 | Semiconductor device and forming method |
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| CN110556295B true CN110556295B (en) | 2021-08-20 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1411041A (en) * | 2001-09-26 | 2003-04-16 | 联华电子股份有限公司 | Method of treating fluorosilicic glass surface layer |
| CN1844003A (en) * | 2006-04-12 | 2006-10-11 | 上海集成电路研发中心有限公司 | Method for preventing fluorine diffusion in manufacturing process of fluorine-silicon glass |
| CN101110385A (en) * | 2006-07-18 | 2008-01-23 | 上海华虹Nec电子有限公司 | Method for integrating insulation film between fluorine doped silicon oxide glass layers |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6670274B1 (en) * | 2002-10-01 | 2003-12-30 | Taiwan Semiconductor Manufacturing Company | Method of forming a copper damascene structure comprising a recessed copper-oxide-free initial copper structure |
| KR100521436B1 (en) * | 2003-11-26 | 2005-10-13 | 동부아남반도체 주식회사 | Semiconductor device and manufacturing method thereof |
| CN102201364A (en) * | 2011-05-26 | 2011-09-28 | 北京大学 | Method for preparing germanium-on-insulator (GeOI) substrate |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1411041A (en) * | 2001-09-26 | 2003-04-16 | 联华电子股份有限公司 | Method of treating fluorosilicic glass surface layer |
| CN1844003A (en) * | 2006-04-12 | 2006-10-11 | 上海集成电路研发中心有限公司 | Method for preventing fluorine diffusion in manufacturing process of fluorine-silicon glass |
| CN101110385A (en) * | 2006-07-18 | 2008-01-23 | 上海华虹Nec电子有限公司 | Method for integrating insulation film between fluorine doped silicon oxide glass layers |
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