CN110553764B - CSOI MEMS pressure sensing element with stress equalizer - Google Patents
CSOI MEMS pressure sensing element with stress equalizer Download PDFInfo
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- CN110553764B CN110553764B CN201910481284.3A CN201910481284A CN110553764B CN 110553764 B CN110553764 B CN 110553764B CN 201910481284 A CN201910481284 A CN 201910481284A CN 110553764 B CN110553764 B CN 110553764B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/0072—For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L25/00—Testing or calibrating of apparatus for measuring force, torque, work, mechanical power, or mechanical efficiency
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
- G01L9/0045—Diaphragm associated with a buried cavity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/07—Interconnects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0161—Controlling physical properties of the material
- B81C2201/0163—Controlling internal stress of deposited layers
- B81C2201/0167—Controlling internal stress of deposited layers by adding further layers of materials having complementary strains, i.e. compressive or tensile strain
Abstract
The invention relates to a pressure sensing element comprising a support substrate comprising a cavity. The device layer is bonded to the support substrate, wherein the membrane of the device layer covers the cavity in a sealing manner. A plurality of piezoresistors are coupled to the diaphragm. A plurality of metal stress equalizers are disposed on the device layer such that each stress equalizer is substantially adjacent to but separated from a corresponding piezoresistor. A plurality of metal bond pads is disposed on the device layer. The plurality of stress equalizers are constructed and arranged to reduce thermal hysteresis of the pressure sensing element caused by stress relaxation of the metal bond pads during cooling and heating cycles of the pressure sensing element.
Description
This application claims the benefit of U.S. provisional application No. 62/680,326 filed on 6/4/2018, the contents of which are hereby incorporated by reference into this specification.
Technical Field
The present invention generally relates to a pressure sensing element that includes at least one stress equalizer to minimize the thermo-mechanical effects of wire bond pad (wire bond pad) metallization and thus thermal hysteresis.
Background
Microelectromechanical Systems (MEMS) pressure sensing elements are well known and widely used. Cavity silicon-on-insulator (C-SOI) wafers are a tip SOI technology in which the handle wafer (or support wafer) contains pre-etched cavities. One type of cavity silicon-on-insulator (CSOI) MEMS pressure sensing element is an absolute pressure sensing element that includes a silicon device layer that is fusion bonded to a silicon support substrate containing a pre-etched cavity to form a reference vacuum in the cavity. The pressure sensing element comprises four piezoresistors connected in a so-called "wheatstone bridge" configuration. Piezoresistors are incorporated on a diaphragm disposed over the cavity in order to detect deflection of the diaphragm due to pressure changes.
These MEMS pressure sensing elements are manufactured in different sizes and are used in a variety of applications. However, wire bond pad metallization in reduced size MEMS pressure sensing elements results in thermal hysteresis, which is not calibratable.
Referring to the hysteresis loop shown in FIG. 1, the voltage output is not maintained during the thermal cooling and heating process of the reduced size MEMS pressure sensing element. The output voltage (V) at the initial point was measured at room temperature of about 22 deg.CI). Then, the temperature of the MEMS pressure sensing element is reduced to-40 deg.C oCAnd then increases back to 22oC, and measuring the voltage output (V) at the midpointM) And the voltage output is higher than the output voltage (V) at the initial pointI). The temperature of the MEMS pressure sensing element is then increased to 150 deg.FoC, and then lowered back to room temperature, and the output voltage (V) of the MEMS pressure sensing element at that termination point is measuredF). Cold hysteresis voltage = VM - VI. Thermal hysteresis voltage = VF - VI. Worst voltage difference = VF – VMAnd is hereby considered to be a thermal hysteresis voltage. Thermal hysteresis is defined as the thermal hysteresis voltage divided by the span and expressed in%. There are the following cases: the thermal hysteresis is too high and the MEMS pressure sensing element may not be calibrated.
The root cause of thermal hysteresis of MEMS pressure sensing elements is due to aluminum stress relaxation (viscoplasticity) during cooling and heating of the aluminum bond pads deposited on silicon. Biaxial aluminum stress cannot be restored to the original residual stress state. The thermal residual stress difference causes an output voltage shift (referred to as a "thermal hysteresis voltage").
Therefore, there is a need for: thermal hysteresis in a MEMS pressure sensing element having such bond pads is reduced or eliminated.
Disclosure of Invention
The purpose of the embodiments is to meet the above mentioned needs. In accordance with the principles of an embodiment, this object is achieved by providing a pressure sensing element that includes a support substrate having a cavity. The device layer is bonded to the support substrate, wherein the membrane of the device layer covers the cavity in a sealing manner. A plurality of piezoresistors are coupled to the diaphragm. A plurality of metal stress equalizers are disposed on the device layer such that each stress equalizer is substantially adjacent to but separated from a corresponding piezoresistor. A plurality of metal bond pads is disposed on the device layer. The plurality of stress equalizers are constructed and arranged to reduce thermal hysteresis of the pressure sensing element caused by stress relaxation of the metal bond pads during cooling and heating cycles of the pressure sensing element.
According to another aspect of the embodiments, a method of controlling thermal hysteresis of a pressure sensing element provides a MEMS pressure sensing element having a supporting substrate including a cavity. The device layer is bonded to the support substrate, wherein the membrane of the device layer covers the cavity in a sealing manner. A plurality of piezoresistors are coupled to the diaphragm, and a plurality of metal bond pads are disposed on the device layer. The method controls thermal hysteresis of the pressure sensing element caused by stress relaxation of the metal bond pads during heating and cooling cycles by increasing radial stress and decreasing tangential stress on each of a plurality of piezoresistors on the pressure sensing element.
Further areas of applicability of the present invention will become apparent from the detailed description provided hereinafter. It should be understood that the detailed description and specific examples, while indicating the preferred embodiment of the invention, are intended for purposes of illustration only and are not intended to limit the scope of the invention.
Drawings
The present invention will become more fully understood from the detailed description and the accompanying drawings, wherein:
FIG. 1 is a thermal hysteresis loop of a MEMS pressure sensing element;
FIG. 2 is a schematic cross-sectional side view of a pressure sensing element having a stress equalizer according to an embodiment of the present invention;
FIG. 3 is a top view of the pressure sensing element of FIG. 2;
FIG. 4 is a perspective view of the pressure sensing element of FIG. 2;
FIG. 5 is a schematic cross-sectional view taken along line 5-5 of FIG. 3;
FIG. 6A is a top view of a pressure sensing element without a stress equalizer showing the radial and tangential stresses at the midpoint M of the thermal hysteresis loop in FIG. 1;
FIG. 6B is a top view of a pressure sensing element without a stress equalizer showing radial and tangential stresses at the termination point F of the thermal hysteresis loop of FIG. 1;
FIG. 7A is a top view of the pressure sensing element of FIG. 4 with an embodiment stress equalizer showing radial and tangential stresses at the midpoint M of the thermal hysteresis loop in FIG. 1;
FIG. 7B is a top view of the pressure sensing element of FIG. 4 with an embodiment stress equalizer showing radial and tangential stresses at the termination point F of the thermal hysteresis loop of FIG. 1;
FIG. 8A is a top view of an alternative embodiment of the MEMS pressure sensing element of FIG. 4 configured with a stress equalizer having an elliptical shape; and
FIG. 8B is a top view of another alternative embodiment of a MEMS pressure sensing element showing a stress equalizer in the shape of a T.
Detailed Description
The following description of the preferred embodiment(s) is merely exemplary in nature and is in no way intended to limit the invention, its application, or uses.
The MEMS pressure sensor includes an ASIC and a MEMS pressure sensing element encapsulated and protected by a housing. An example of a MEMS pressure sensing element according to an embodiment of the present invention is shown generally at 10 in fig. 2-5. The MEMS pressure sensing element 10 includes a device layer, generally indicated at 12, a supporting silicon substrate 14 and a buried oxide layer 16. A recess or cavity, generally at 18, is defined in the support substrate 14. The device layer 12 is attached to the support substrate 14 such that a diaphragm 19 of the device layer 12 covers the cavity 18 in a sealed manner to define a vacuum cavity below the diaphragm 19. A plurality of piezoresistors 20 are incorporated and a plurality of bond pads 22 are deposited or otherwise coupled to the device layer 12. The bond pads 22 are metal and preferably aluminum. Piezoresistors 20 are arranged on the diaphragm 19 and near its peripheral edge 21 in a standard distributed Wheatstone bridge arrangement in order to sense stress when the diaphragm 19 deflects.
According to an embodiment, as shown in fig. 2-4, a plurality of stress equalizers 24 are provided on the upper surface of the device layer 12. Each stress equalizer 24 is a separate metal member from the bond pad, but is the same metal (e.g., aluminum) as the bond pad. As shown in fig. 3, four stress equalizers 24 are provided, with one stress equalizer 24 positioned generally adjacent to but separate from a respective piezoresistor 20. In an embodiment, two piezoresistors 20 and two corresponding stress equalizers 24 are arranged on a first axis X, and the other two piezoresistors 20 and two corresponding stress equalizers 24 are arranged on a second axis Y perpendicular to axis X. Thus, the stress equalizer 24 is positioned substantially symmetrically outside the peripheral edge 21 of the diaphragm 19. The stress equalizer 24 increases the radial stress and decreases the tangential stress on the piezoresistors 20, so that the thermal hysteresis decreases, as will be explained further below.
The function of stress equalizer 24 will be understood with respect to fig. 6A, 6B, 7A, and 7B. Fig. 6A is a top view of the pressure sensing element without the stress equalizer 24 and shows the radial and tangential stresses on the piezoresistor 20 at the midpoint M of the thermal hysteresis loop in fig. 1. When the tangential stress on the piezoresistor 20 is greater than the radial stress on the piezoresistor 20 due to the thermal residual stress on the metal bond pad 22 caused by cold cycling, a negative output voltage V of the MEMS pressure-sensing element is generated at the midpoint M in FIG. 1M. Fig. 6B is a top view of the pressure sensing element without the stress equalizer 24 and shows the radial and tangential stresses at the end point F of the thermal hysteresis loop of fig. 1. As shown, due to the higher thermal residual stress on the metal bond pads 22 caused by thermal cycling, the tangential stress on the piezoresistor 20 is further greater than the radial stress on the piezoresistor 20, resulting in an additional negative output voltage V of the pressure sensing element at the end point FF. Such a negative output voltage results in a negative thermal hysteresis (V) due to different thermal residual stresses on the wire bond pad 22 metallizationF – VM）。
FIG. 7A is a top view of the MEMS pressure sensing element 10 with the stress equalizer 24 and shows the radial and tangential stresses on the piezoresistor 20 at the midpoint M of the thermal hysteresis loop of FIG. 1. As shown, the negative voltage output V at the midpoint M increases in radial stress and decreases in tangential stress on the piezoresistors 20 due to thermal residual stress on the stress equalizers 24 near the corresponding piezoresistors 20FDecreasing and moving towards zero or a small output voltage. FIG. 7B is a pressure sensing cell with stress equalizer 24A top view of the piece 10 and shows the radial and tangential stresses on the piezoresistor 20 at the end point F of the thermal hysteresis loop of fig. 1. As shown, the magnitude of the radial stress on the piezoresistor 20 is also closer to the magnitude of the tangential stress on the piezoresistor 20, resulting in a small output voltage V at the end point FF. Thus, a smaller thermal hysteresis (V) can be achievedF – VM). The change in the negative output voltage toward a much smaller value due to the stress equalizer 24 improves the thermal hysteresis of the MEMS pressure sensing element 10 even with wire bond pad 22 metallization in the case of the MEMS pressure sensing element 10.
The size, shape, and location of the stress equalizer 24 can be selected and optimized to achieve zero thermal lag. Fig. 3 and 4 show each stress equalizer 24 having a rectangular shape. Fig. 8A shows a stress equalizer 24' that is oval in shape and is substantially symmetrically positioned, where the equalizer 24 is adjacent to the corresponding piezoresistor 20. Fig. 8B shows a T-shaped stress equalizer 24 ". Other shapes of stress equalizer 24 are possible. Preferably, stress equalizer 24 is not in contact with silicon and is positioned at LP Si3N4Over the passivation layer as shown in fig. 5.
By using the stress equalizer 24 on the MEMS pressure sensing element 10, a smaller, lower cost sensing element can be provided, and without or with little thermal hysteresis.
The description of the invention is merely exemplary in nature and, thus, variations that do not depart from the gist of the invention are intended to be within the scope of the invention. Such variations are not to be regarded as a departure from the spirit and scope of the invention.
Claims (15)
1. A pressure sensing element, the pressure sensing element comprising:
a support substrate comprising a cavity;
a device layer bonded to the support substrate, wherein a membrane of the device layer covers the cavity in a sealed manner;
a plurality of piezoresistors coupled to the diaphragm;
a plurality of metal stress equalizers disposed on the device layer such that each stress equalizer is substantially adjacent to but separated from a corresponding piezoresistor, an
A plurality of metal bond pads disposed on the device layer,
wherein the plurality of stress equalizers are constructed and arranged to reduce thermal hysteresis of the pressure sensing element caused by stress relaxation of the metal bond pads during cooling and heating cycles of the pressure sensing element;
wherein the plurality of stress equalizers are constructed and arranged on the device layer to increase radial stress and decrease tangential stress on the plurality of piezoresistors during the cooling and heating cycles;
wherein four piezoresistors are provided on the diaphragm in a Wheatstone bridge arrangement near a peripheral edge of the diaphragm, and four corresponding stress equalizers are provided on the device layer outside the peripheral edge of the diaphragm.
2. The pressure sensing element of claim 1, wherein the four stress equalizers are symmetrically arranged on the device layer.
3. The pressure sensing element of claim 1, wherein the metal of each of the plurality of bond pads and each of the plurality of stress equalizers is aluminum.
4. The pressure sensing element of claim 2, wherein each of the stress equalizers is rectangular in shape.
5. The pressure sensing element of claim 2, wherein each of the stress equalizers is at least one of oval-shaped and T-shaped.
6. The pressure sensing element of claim 1, wherein the plurality of stress equalizers are separate from the plurality of bond pads.
7. The pressure sensing element of claim 1, wherein two of the piezoresistors and two of the corresponding stress equalizers are disposed on a first axis, and the other two piezoresistors and the other two corresponding stress equalizers are disposed on a second axis perpendicular to the first axis.
8. A method of controlling thermal hysteresis of a pressure sensing element, the method comprising the steps of:
providing a pressure sensing element having: a support substrate comprising a cavity; a device layer bonded to the support substrate, wherein a membrane of the device layer covers the cavity in a sealed manner; a plurality of piezoresistors coupled to the diaphragm; and a plurality of metal bond pads disposed on the device layer, an
Controlling thermal hysteresis of the pressure sensing element caused by stress relaxation of the metal bond pads during heating and cooling cycles by increasing radial stress and decreasing tangential stress on each of the plurality of piezoresistors on the pressure sensing element;
wherein the step of controlling the thermal hysteresis comprises:
providing a plurality of metal stress equalizers disposed on the device layer such that each stress equalizer is substantially adjacent to but separated from a corresponding piezoresistor;
wherein four piezoresistors are provided on the diaphragm in a Wheatstone bridge arrangement near a peripheral edge of the diaphragm, and the method provides four corresponding stress equalizers on the device layer outside the peripheral edge of the diaphragm.
9. The method of claim 8, wherein the four stress equalizers are symmetrically arranged on the device layer.
10. The method of claim 8, wherein the metal of each of the plurality of bond pads and each of the plurality of stress equalizers is aluminum.
11. The method of claim 8, wherein each of the stress equalizers is provided in a rectangular shape.
12. The method of claim 8, wherein each of the stress equalizers is provided in an elliptical shape.
13. The method of claim 8, wherein each of the stress equalizers is provided in a T-shape.
14. The method of claim 8, wherein the plurality of stress equalizers are separate from the plurality of bond pads.
15. The method of claim 8, wherein two of the piezoresistors and two of the corresponding stress equalizers are disposed on a first axis, and the other two piezoresistors and the other two corresponding stress equalizers are disposed on a second axis perpendicular to the first axis.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862680326P | 2018-06-04 | 2018-06-04 | |
| US62/680326 | 2018-06-04 | ||
| US16/123,367 US11029227B2 (en) | 2018-06-04 | 2018-09-06 | CSOI MEMS pressure sensing element with stress equalizers |
| US16/123367 | 2018-09-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110553764A CN110553764A (en) | 2019-12-10 |
| CN110553764B true CN110553764B (en) | 2022-05-13 |
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| CN201910481284.3A Active CN110553764B (en) | 2018-06-04 | 2019-06-04 | CSOI MEMS pressure sensing element with stress equalizer |
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| DE (1) | DE102019207963B4 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| DE102021211561A1 (en) * | 2020-11-19 | 2022-05-19 | Vitesco Technologies USA, LLC | MEMS PRESSURE SENSING ELEMENT WITH VOLTAGE ADJUSTERS |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3873454B2 (en) * | 1998-05-29 | 2007-01-24 | 株式会社デンソー | Semiconductor pressure sensor |
| US6528340B2 (en) * | 2001-01-03 | 2003-03-04 | Honeywell International Inc. | Pressure transducer with composite diaphragm |
| US6952042B2 (en) | 2002-06-17 | 2005-10-04 | Honeywell International, Inc. | Microelectromechanical device with integrated conductive shield |
| US7111518B1 (en) * | 2003-09-19 | 2006-09-26 | Silicon Microstructures, Inc. | Extremely low cost pressure sensor realized using deep reactive ion etching |
| US8080869B2 (en) * | 2005-11-25 | 2011-12-20 | Panasonic Electric Works Co., Ltd. | Wafer level package structure and production method therefor |
| JP2009524922A (en) * | 2006-01-24 | 2009-07-02 | エヌエックスピー ビー ヴィ | Stress buffer package for semiconductor components |
| JP4739164B2 (en) | 2006-10-20 | 2011-08-03 | 三菱電機株式会社 | Semiconductor strain sensitive sensor for measuring intake air pressure of vehicle engine |
| WO2012080811A1 (en) | 2010-12-15 | 2012-06-21 | パナソニック株式会社 | Semiconductor pressure sensor |
| US8714021B2 (en) * | 2012-02-27 | 2014-05-06 | Amphenol Thermometrics, Inc. | Catheter die and method of fabricating the same |
| US9176018B2 (en) * | 2013-02-22 | 2015-11-03 | Bin Qi | Micromachined ultra-miniature piezoresistive pressure sensor and method of fabrication of the same |
| US10221062B2 (en) * | 2016-10-03 | 2019-03-05 | Continental Automotive Systems, Inc. | Cavity with silicon on insulator MEMS pressure sensing device with an extended shallow cross-shaped cavity |
-
2019
- 2019-05-29 DE DE102019207963.6A patent/DE102019207963B4/en active Active
- 2019-06-04 CN CN201910481284.3A patent/CN110553764B/en active Active
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| CN110553764A (en) | 2019-12-10 |
| DE102019207963B4 (en) | 2023-11-09 |
| DE102019207963A1 (en) | 2019-12-05 |
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