CN110546831A - optical transmission device integrated with semiconductor laser driving circuit chip and manufacturing method thereof - Google Patents
optical transmission device integrated with semiconductor laser driving circuit chip and manufacturing method thereof Download PDFInfo
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- CN110546831A CN110546831A CN201880027302.4A CN201880027302A CN110546831A CN 110546831 A CN110546831 A CN 110546831A CN 201880027302 A CN201880027302 A CN 201880027302A CN 110546831 A CN110546831 A CN 110546831A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 223
- 230000005540 biological transmission Effects 0.000 title claims abstract description 57
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims abstract description 92
- 238000012544 monitoring process Methods 0.000 claims abstract description 77
- 239000004020 conductor Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 7
- 230000001070 adhesive effect Effects 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 3
- 210000000746 body region Anatomy 0.000 claims description 2
- 239000013307 optical fiber Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The present invention relates to an optical transmission device including: a substrate; an optical signal output unit that is provided on the substrate and outputs an optical signal in a first direction; an optical signal output driver circuit chip disposed on the substrate and supplying a current to the optical signal output part; a reflection unit located between the optical signal output unit and the optical signal output driver circuit chip, and reflecting light of the optical signal output unit, which is output in a second direction different from the first direction, toward a third direction different from the first direction and the second direction; and a monitoring photosensor that receives light reflected in the third direction and generates a current corresponding to the reflected light.
Description
Technical Field
The present invention relates to an optical transmission module integrated with a semiconductor laser driving circuit chip and a method of manufacturing the same.
Background
In the case of an optical transmission module incorporating a semiconductor laser driver IC, an optical signal output from the front surface of a semiconductor laser is converged on an optical fiber for transmission, and light output to the rear of the semiconductor laser enters a monitoring optical sensor to generate a current proportional to the intensity of the light, which is used in a driver circuit for stabilizing the optical output of the semiconductor laser.
fig. 1 shows a general optical transmission device using a semiconductor laser. As shown in fig. 1, the optical signal output section 10 outputs an optical signal to the front. The output optical signal is converged by the lens 20 and enters the optical fiber 30. The optical signal output driver circuit 40 outputs an optical signal by supplying a current to the optical signal output unit 10, and the intensity of the optical signal is proportional to the magnitude of the current supplied from the optical signal output driver circuit 40.
The optical signal intensity of the optical signal output section 10 may vary depending on the ambient temperature, the use period of the optical signal output section 10, and the like, and thus unstable optical signal transmission may be performed.
the optical signal output unit 10 also emits light to the rear of the semiconductor laser chip, and the intensity of the light emitted to the rear is proportional to the intensity of the optical signal output to the front. The monitoring unit 50 senses light emitted to the rear of the optical signal output unit 10 using an optical sensor, and outputs a current corresponding to the intensity of the sensed light to the power control unit.
The power control unit 60 outputs a control signal to the optical signal output driving circuit 40 based on the current, and the optical signal output driving circuit 40 changes the magnitude of the current based on the control signal, so that the optical signal output unit 10 outputs an optical signal of a constant intensity.
further, as the optical signal output unit 10 outputs a high-speed optical signal, the longer the arrangement distance between the optical signal output unit 10 and the optical signal output driver circuit 40 is, the more likely distortion of the optical signal is caused.
Therefore, in recent years, in a high-speed optical transmission module of 10Gbps or more, a package of the optical signal output driver circuit 40 and the optical signal output unit 10 has been studied, and distortion of an optical signal can be prevented by integrating semiconductor laser driver IC chips together inside the optical transmission module.
disclosure of Invention
technical subject
According to the optical transmission device and the manufacturing method thereof of the embodiment of the present invention, an optical package structure is provided in which two chips, a driving circuit chip and an optical sensor, are disposed in effective proximity behind a semiconductor laser operating at high speed, thereby reducing distortion of an optical signal when transmitting a high-speed optical signal.
The problem of the present application is not limited to the above-mentioned problem, and other problems not mentioned should be clearly understood by those skilled in the art from the following description.
Means for solving the problems
according to an aspect of the present invention, there is provided an optical transmission device including: a substrate; an optical signal output unit that is provided on the substrate and outputs an optical signal of the semiconductor laser in a first direction; an optical signal output driver circuit chip disposed on the substrate and supplying a current to the optical signal output part; a reflection unit located between the optical signal output unit and the optical signal output driver circuit chip, and reflecting light of the optical signal output unit, which is output in a second direction different from the first direction, toward a third direction different from the first direction and the second direction; and a monitoring photosensor to which light reflected in the third direction is input and which generates a current corresponding to the reflected light.
Optionally, the interval between the optical signal output part and the optical signal output driving circuit chip is 0.2mm to 0.5 mm.
alternatively, the reflection unit may be made of the same material as the substrate, and may include a reflection body protruding from the substrate and a reflection layer deposited on the reflection body.
Optionally, the reflective layer is electrically connected to the bottom.
alternatively, a conductive material made of the same material as the reflective layer may be formed on the substrate.
The reflected light may travel in an empty space between the reflection portion and the monitoring photosensor.
Optionally, the optical transmission apparatus according to an aspect of the present invention further includes: a monitoring substrate on which the monitoring photosensor is provided; and a support portion for spacing the substrate for the monitoring portion from the reflection portion.
According to an aspect of the present invention, the optical transmission device is provided with the monitoring optical sensor, and further includes a monitoring substrate spaced apart from the reflection portion, and the monitoring optical sensor is closer to the reflection portion than the monitoring substrate.
alternatively, the monitoring photosensor is wire-bonded to a conductive portion, and the conductive portion is filled in a through hole formed in the monitoring substrate.
According to an aspect of the present invention, the optical transmission device is provided with the monitoring photosensor, and further includes a monitoring substrate spaced apart from the reflection portion, and the reflected light passes through the monitoring substrate and reaches the monitoring photosensor.
Alternatively, the monitoring photosensor and the monitoring substrate are flip-chip bonded.
Alternatively, a light receiving region of the monitoring photosensor for sensing the reflected light may be located opposite to the side of the monitoring photosensor adjacent to the monitoring substrate.
According to another aspect of the present invention, there is provided a method of manufacturing an optical transmission device, including the steps of: etching a substrate to form a reflecting body protruding from the substrate and having an inclined surface; forming a reflective layer capable of reflecting light on the reflective body; depositing an adhesive substance on a first region of the substrate on which an optical signal output unit is to be provided, the optical signal output unit outputting an optical signal in a first direction and outputting light in a second direction reflected by a reflective layer of the reflection body; and depositing an adhesive substance on a second region of the substrate where an optical signal output driver circuit chip is to be disposed, the optical signal output driver circuit chip supplying a current to the optical signal output section.
Optionally, according to another aspect of the present invention, the method for manufacturing an optical transmission device further includes: dry etching is performed on at least a part of the remaining region of the substrate other than the reflection body region to increase the thickness of the reflection body.
Optionally, the distance between the first region and the second region is 0.2mm to 0.5 mm.
Effects of the invention
According to the optical transmission device and the method of manufacturing the optical transmission device of the embodiment of the present invention, the reflection portion that reflects the light emitted from the optical signal output portion toward the semiconductor laser and the monitoring optical sensor located at the upper end of the drive circuit chip is provided between the optical signal output portion and the optical signal output drive circuit chip, so that the drive circuit chip can be disposed close to the rear of the semiconductor laser, and distortion of the optical signal can be reduced when a high-speed optical signal is transmitted.
The effects of the present application are not limited to the above-mentioned effects, and regarding other effects not mentioned, those of ordinary skill can clearly understand from the following description.
drawings
Fig. 1 and 4 show a general semiconductor laser light transmission device.
fig. 2 shows a cross-sectional view of an optical transmission device according to an embodiment of the present invention.
Fig. 3 shows a top view of an optical transmission device according to an embodiment of the present invention.
Fig. 5 and 6 show optical transmission devices according to other embodiments of the present invention.
Fig. 7 shows a manufacturing process of a substrate for an optical transmission device according to an embodiment of the present invention.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the drawings are provided only for the purpose of easier disclosure of the present invention, and it should be easily understood by those skilled in the art that the scope of the present invention is not limited by the scope of the drawings.
The terms used in the present application are used only for describing specific embodiments, and are not intended to limit the present invention. Where not explicitly stated in the text, expressions in the singular include expressions in the plural.
In the present application, it is to be understood that the terms "includes" or "including" are used for specifying the presence of the features, the numbers, the steps, the actions, the components, the combinations thereof described in the specification, and do not exclude the presence or addition of one or more other features, the numbers, the steps, the actions, the components, the combinations thereof.
Fig. 2 shows a cross-sectional view of an optical transmission device according to an embodiment of the present invention, and fig. 3 shows a top view of a 4-channel optical transmission device according to an embodiment of the present invention.
As shown in fig. 2 and 3, the optical transmission apparatus according to the embodiment of the present invention includes: a substrate 110, an optical signal output unit 130, an optical signal output driver circuit chip 150, a reflection unit 170, and a monitoring photosensor 190.
The substrate 110 may include a silicon Optical Bench (Si Optical Bench), but is not limited thereto.
The optical signal output section 130 is provided on the substrate 110, and outputs an optical signal of the semiconductor laser in a first direction. The optical signal may be output from one side of the optical signal output part 130. Such an optical signal in the first direction is incident on a lens (not shown) and condensed, and the condensed optical signal may be incident on an optical fiber (not shown) and transmitted.
The optical signal output driving circuit chip 150 is disposed on the substrate 110, and supplies a current to the optical signal output part 130. In this case, the optical signal output unit 130 may output an optical signal related to the waveform of the current. A plurality of optical signal output driving circuit chips 150 for embodying a multi-channel (multi-channel) and a plurality of optical signal output parts 130 corresponding thereto may be disposed on the substrate 110.
For example, as shown in fig. 3, 4 optical signal output driver circuit chips 150 for forming 4 channels are provided on the substrate 110, and the 4 optical signal output units 130 can output optical signals by receiving respective currents from the optical signal output driver circuit chips 150.
Such an optical signal output driver circuit chip 150 and the optical signal output section 130 may be wire bonded for supplying an electric current.
The reflection unit 170 is located between the optical signal output unit 130 and the optical signal output driver circuit chip 150, and reflects light of the optical signal output unit 130, which is output in a second direction different from the first direction, toward a third direction different from the first direction and the second direction. In order to reflect the light of the second direction toward the third direction, the reflection part 170 may have an inclined surface inclined at an angle θ.
For example, the optical signal output unit 130 may output an optical signal not only from one side surface of the optical signal output unit 130 but also from the other surface opposite to the one side surface. In this case, the intensity of the light reflected in the third direction is proportional to the intensity of the optical signal output in the first direction. The reflection unit 170 can reflect the light emitted from the other side surface toward the monitoring photosensor 190 located opposite to the substrate 110, with reference to the optical signal output driver circuit chip 150 and the optical signal output unit 130.
The monitoring photosensor 190 receives light reflected in the 3 rd direction, and generates a current corresponding to the reflected light. That is, the monitoring photosensor 190 may generate a current of an intensity proportional to the intensity of the reflected light.
The current output from the monitoring photosensor 190 is input to a power control unit (not shown), the power control unit outputs a control signal based on the current intensity of the monitoring photosensor 190 to the optical signal output driver circuit chip 150, and the optical signal output driver circuit chip 150 changes the magnitude of the current in accordance with the control signal, so that the optical signal output unit 130 outputs an optical signal of a constant intensity.
As described above with reference to fig. 1, in order to transmit a high-speed optical signal of 25Gbps or more, for example, while reducing signal distortion, the distances between the optical signal output driver circuit chip 40 and the optical signal output unit 10 provided on the substrate 70 need to be as close as possible.
therefore, as shown in fig. 4(a), in the case of a general single channel (single channel) optical transmission module, the optical signal output driving circuit chip 40 is disposed at the lower end of the optical signal output section 10, so that the disposition distance between the optical signal output section 10 and the optical signal output driving circuit chip 40 can be reduced. In this case, the arrangement distance needs to be about 0.2mm to 0.5mm, so that the signal distortion can be reduced to transmit high-speed optical signals of 10Gbps to 25 Gbps.
However, as shown in fig. 4(b), in the case of a multi-channel optical transmission module, an optical communication output array (array)80 including a plurality of optical communication output sections 10 or a plurality of individual optical communication output sections 10 may be provided on the substrate 70. In general, in the case of such a multi-channel optical transmission module, the distance between the centers of the adjacent optical communication output units 10 of each optical communication output array 80 is 250 μm to 750 μm.
in this way, the distance between the optical communication output units 10 of the optical communication output array 80 is narrow, and it is difficult to arrange the optical signal output driving circuit chip 40 at each of the lower ends of the plurality of optical communication output units 10. In order to solve such a situation, it is necessary to increase the distance between the semiconductor laser optical communication output sections 10 of the respective channels, and in the case of such a multi-channel optical module, since the intervals between the respective channels of the semiconductor laser array or the monitoring photosensor array have been standardized, it is difficult for a manufacturer of the optical transmission device to arbitrarily lengthen the distance between the optical communication output sections 10.
In addition, a multi-channel optical fiber array (not shown) having an optical fiber interval of 250 to 750 μm is commercialized in accordance with the commercialized optical communication output array 80, and thus, it is not significant that a manufacturer of an optical transmission apparatus arbitrarily increases the distance between the optical communication output units 10.
Therefore, as shown in fig. 4(b), the optical signal output driver circuit chip 40 needs to be disposed behind the optical communication output array 80, but since the monitoring photosensor 50 needs to be disposed behind the optical communication output array 80 and light emitted rearward from the optical signal output unit 10 needs to be sensed, it is difficult to dispose the optical communication output array 80 and the optical signal output driver circuit chip 40 in close proximity to each other.
As compared with a general optical transmission device, as shown in fig. 2 and 3, according to the optical transmission device of the embodiment of the present invention, a reflection unit 170 is provided between the optical signal output driving circuit chip 150 and the optical signal output unit 130, and the reflection unit 170 may reflect light emitted from the optical signal output unit 130 in the second direction toward the monitoring photosensor 190 to the third direction.
In this case, the reflection unit 170 can be manufactured on the substrate 110 by a photolithography process, and even if the reflection unit 170 is positioned between the optical signal output unit 130 and the optical signal output driver circuit chip 150, the interval between the optical signal output unit 130 and the optical signal output driver circuit chip 150 can be reduced, so that distortion can be reduced and high-speed optical signals of 25Gbps or more can be transmitted. The process for manufacturing the reflection unit 170 will be described in detail below with reference to the drawings.
In order to transmit high-speed optical signals of 25Gbps or more while reducing distortion, the interval between the optical signal output section 130 and the optical signal output driver circuit chip 150 may be 0.2mm to 0.5mm, and the reflection section 170 may be disposed between the two.
as described with reference to fig. 2 and 3, the optical signal output driving circuit chip 150 and the optical signal output part 130 are disposed on one substrate 110, and thus the optical transmission device according to the embodiment of the present invention may be implemented in a module form.
On the other hand, the light reflected by the reflection part 170 may travel in an empty space between the reflection part 170 and the monitoring photosensor 190 to reach the monitoring photosensor 190. That is, as shown in fig. 2 and 3, the optical transmission apparatus according to the embodiment of the present invention may further include: the monitor substrate 200 includes a monitor photosensor 190, and a support portion 210 for spacing the monitor substrate 200 from the reflection portion 170. In this case, the monitor substrate 200 may be a ceramic substrate, but is not limited thereto.
Since the supporting portion 210 thus partitions the monitor substrate 200 and the reflecting portion 170, a space between the monitor substrate 200 and the reflecting portion 170 partitioned by the supporting portion 210 may be empty, and thus the light reflected by the reflecting portion 170 travels through the empty space between the reflecting portion 170 and the monitor photosensor 190 to reach the monitor photosensor 190.
Since the light reflected in this manner passes through the empty space and can travel without hindrance, the operation of the monitoring photosensor 190 can be performed stably and accurately.
As described above with reference to fig. 2, the optical transmission device according to the embodiment of the present invention includes the monitoring photosensor 190, and may further include the monitoring substrate 200 spaced apart from the reflection unit 170. In this case, the monitoring photosensor 190 may be closer to the reflection unit 170 than the monitoring substrate 200.
Therefore, the monitoring photosensor 190 can be wire-bonded to the conductive portion filled in the through hole (via hole) formed on the monitoring substrate 200. Therefore, one end of the monitoring photosensor 190 may be connected to one side of the conductive material of the left through hole, and the other side of the conductive material of the left through hole may be wire-bonded to the power control unit. Alternatively, the other end of the monitoring photosensor 190 may be connected to one side of the conductive material of the right through-hole, and the other side of the conductive material of the right through-hole may be wire-bonded to the power control unit.
As shown in fig. 5, the optical transmission device according to another embodiment of the present invention is provided with a monitoring photosensor 190, and may further include a monitoring substrate 200 spaced apart from the reflection portion 170. At this time, the light reflected in the third direction by the reflection unit 170 may pass through the monitoring substrate 200 and reach the monitoring photosensor 190. Therefore, the monitoring substrate 200 may be a light-transmissive substrate such as a glass substrate.
Since the light reflected in this manner reaches the monitor substrate 200 through the monitor substrate 200, the light receiving region of the monitor substrate 190 can be disposed adjacent to or in contact with the monitor substrate 200, and thus the monitor substrate 200 and the monitor substrate 190 can be flip chip bonded (flip chip bonding).
As shown in fig. 6, the reflected light reaches the monitoring photosensor 190 through the monitoring substrate 200, and the light receiving region of the monitoring photosensor 190 for sensing the reflected light may be located on the other side of the monitoring photosensor 190 adjacent to the monitoring substrate 200. Therefore, the monitoring photosensor 190 may include a backside illumination monitoring photosensor (backside illumination monitoring photosensor).
For reference, the supporting portion 210 is not shown in fig. 5 and 6 for convenience of description.
Next, a method of manufacturing an optical transmission device according to an embodiment of the present invention will be described with reference to the drawings.
Fig. 7 shows a manufacturing process of a silicon substrate of an optical transmission device according to an embodiment of the present invention. As shown in fig. 7(a), the substrate 110 is etched in accordance with a mask pattern, thereby forming a reflection body 171 having an inclined surface protruding from the substrate 110. At this time, the etching may be a V groove etching (V groove etching) based on chemical wet etching (chemical wet etching). In addition, the substrate 110 may be a silicon wafer, but is not limited thereto.
The angle of the inclined plane may be different depending on the crystalline structure of the substrate 110 or the direction in which the silicon ingot is sliced. For example, the angle of the inclined surface may be 45 degrees or 54.7 degrees, but is not limited thereto.
As shown in fig. 7(b), the method for manufacturing a substrate of an optical transmission device according to an embodiment of the present invention may further include the steps of: at least a part of the remaining region of the substrate 110 outside the region of the reflection body 171 is dry etched to increase the thickness of the reflection body 171. At this time, the substrate 110 may be etched in a vertical direction by dry etching.
as shown in fig. 2, the reason why the thickness of the reflection body 171 is increased as described above is to take into consideration the thickness of the semiconductor laser for the optical signal output section 130. Unlike the embodiment of the present invention, if the thickness of the reflection body 171 is not increased, the height of the reflection part 170 is lowered, and light emitted in the second direction by the semiconductor laser for the signal output part 130 may not be sufficiently reflected.
as shown in fig. 7(c), a reflective layer 173 capable of reflecting light is formed on the reflective body 171. The reflective layer 173 may be composed of a conductive material, and the conductive material may be a stacked structure of Au and Ti, but is not limited thereto.
As described above, the reflection part 170 may include the reflection body and the reflection layer 173. In this case, the reflection body 171 is formed by etching the substrate 110, and is made of the same material as the substrate 110, and can protrude from the substrate 110. The reflective layer 173 may be formed on the reflective body 171 by vapor deposition.
Since the reflective layer 173 is made of a conductive material, the reflective layer 173 can be electrically connected to the bottom portion. Therefore, as shown in fig. 7(c), the reflective layer 173 may be deposited not only on the reflective body 171 but also on at least a part of the region of the substrate 110. That is, a conductive material made of the same material as the reflective layer 173 may be formed on the substrate 110.
As shown in fig. 7(d) and 7(e), the adhesive substance 230 is deposited on the first region of the substrate 110 on which the optical signal output unit 130 is to be disposed, and the optical signal output unit 130 outputs an optical signal in a first direction and outputs light in a second direction, which is reflected by the reflective layer 173 formed on the reflective body 171.
As shown in fig. 7(d) and 7(e), an adhesive substance 230 is deposited on a second region of the substrate 110 on which the optical signal output driver circuit chip 150 is to be provided, and the optical signal output driver circuit chip 150 supplies a current to the optical signal output section 130.
In this case, the first region and the second region may be formed by SiO2 passivation (deposition), and the bonding material 230 may be a solder (solder) of Au/Sn alloy, but is not limited thereto.
The first and second regions may be set simultaneously, or the adhesive substance 230 may be deposited simultaneously in the first and second regions.
In this way, the reflection part 170 is formed between the first region and the second region through a photolithography process, and thus the distance between the first region and the second region may be 0.2mm to 0.5mm, so that the optical signal output part 130 and the optical signal output driving circuit chip 150 are closely arranged to such an extent that distortion of a high-speed optical signal may be reduced or eliminated.
As described above, the fact that the embodiments according to the present invention are described, the present invention can be embodied in other specific forms than the embodiments described above without departing from the spirit and scope thereof will be apparent to those skilled in the art to which the present invention pertains. Accordingly, the above-described embodiments should be considered as non-limiting, but illustrative, and the invention is not limited to the foregoing description, but may be modified within the scope and equivalents of the appended claims.
Claims (15)
1. An optical transmission apparatus, comprising:
A substrate;
An optical signal output unit that is provided on the substrate and outputs an optical signal of the semiconductor laser in a first direction;
An optical signal output driver circuit chip disposed on the substrate and supplying a current to the optical signal output part;
A reflection unit located between the optical signal output unit and the optical signal output driver circuit chip, and reflecting light of the optical signal output unit, which is output in a second direction different from the first direction, toward a third direction different from the first direction and the second direction; and
And a monitoring light sensor that receives light reflected in the third direction and generates a current corresponding to the reflected light.
2. The optical transmission apparatus according to claim 1,
The interval between the optical signal output part and the optical signal output driving circuit chip is 0.2mm to 0.5 mm.
3. the optical transmission apparatus according to claim 1,
The reflection unit is made of the same material as the substrate, and includes a reflection body protruding from the substrate and a reflection layer deposited on the reflection body.
4. The optical transmission apparatus according to claim 3,
The reflective layer is electrically connected to the bottom.
5. The optical transmission apparatus according to claim 4,
And forming a conductive material made of the same material as the reflective layer on the substrate.
6. the optical transmission apparatus according to claim 1,
The reflected light may travel in an empty space between the reflection portion and the monitoring photosensor.
7. The optical transmission apparatus according to claim 1 or 6, further comprising:
A monitoring substrate on which the monitoring photosensor is provided; and
And a support portion for spacing the substrate for the monitoring portion from the reflection portion.
8. The optical transmission apparatus according to claim 1,
The optical transmission device is provided with the monitoring optical sensor, and further includes a monitoring substrate spaced apart from the reflection portion, and the monitoring optical sensor is closer to the reflection portion than the monitoring substrate.
9. The optical transmission apparatus of claim 8,
The monitoring photosensor is wire-bonded to a conductive portion that is filled in a through hole formed in the monitoring substrate.
10. The optical transmission apparatus according to claim 1,
the optical transmission device is provided with the monitoring photosensor, and further includes a monitoring substrate spaced apart from the reflection portion, and the reflected light passes through the monitoring substrate and reaches the monitoring photosensor.
11. the optical transmission apparatus of claim 10,
the monitoring photosensor and the monitoring substrate are flip-chip bonded.
12. The optical transmission apparatus of claim 10,
The light receiving region of the monitoring photosensor for sensing the reflected light is located opposite to the side of the monitoring photosensor chip adjacent to the monitoring substrate.
13. A method of manufacturing an optical transmission device, comprising the steps of:
Etching a substrate to form a reflection body protruding from the substrate and having an inclined surface;
Forming a reflective layer capable of reflecting light on the reflective body;
Depositing an adhesive material on a first region of the substrate on which an optical signal output section is to be provided, the optical signal output section outputting an optical signal of the semiconductor laser in a first direction and outputting light in a second direction reflected by the reflection layer of the reflection body; and
And depositing an adhesive substance on a second region of the substrate where an optical signal output driving circuit chip is to be arranged, wherein the optical signal output driving circuit chip supplies current to the optical signal output part.
14. The method for manufacturing an optical transmission device according to claim 13, further comprising:
Dry etching is performed on at least a part of the remaining region of the substrate other than the reflection body region to increase the thickness of the reflection body.
15. The method for manufacturing an optical transmission device according to claim 13,
The distance between the first region and the second region is 0.2mm to 0.5 mm.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020170054009A KR101917665B1 (en) | 2017-04-27 | 2017-04-27 | Apparatus and fabrication method for optical transmitter module with laser diode driver IC |
| KR10-2017-0054009 | 2017-04-27 | ||
| PCT/KR2018/004755 WO2018199602A1 (en) | 2017-04-27 | 2018-04-24 | Optical transmission device with semiconductor laser driving circuit chip integrated therein, and manufacturing method therefor |
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| CN110546831A true CN110546831A (en) | 2019-12-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201880027302.4A Pending CN110546831A (en) | 2017-04-27 | 2018-04-24 | optical transmission device integrated with semiconductor laser driving circuit chip and manufacturing method thereof |
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| Country | Link |
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| KR (1) | KR101917665B1 (en) |
| CN (1) | CN110546831A (en) |
| WO (1) | WO2018199602A1 (en) |
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| CN1316669A (en) * | 2000-03-20 | 2001-10-10 | 朗迅科技公司 | Lift position optical shunting on optical component |
| CN101689746A (en) * | 2007-03-19 | 2010-03-31 | 金定洙 | Self-standing parallel plate beam splitter, method for manufacturing the same, and laser diode package structure using the same |
| CN101713850A (en) * | 2008-10-02 | 2010-05-26 | 韩国电子通信研究院 | Bidirectional optical transceiving and receiving apparatus |
| CN102546030A (en) * | 2010-12-14 | 2012-07-04 | 光电解决方案有限公司 | Optical transceiver using single-wavelength communication |
| CN102749684A (en) * | 2012-03-26 | 2012-10-24 | 武汉华工正源光子技术有限公司 | Laser transceiving device, manufacturing method thereof and method for improving temperature operation range thereof |
| CN103163602A (en) * | 2011-12-19 | 2013-06-19 | 鸿富锦精密工业（深圳）有限公司 | Photovoltaic module |
| US20150063398A1 (en) * | 2013-09-04 | 2015-03-05 | Nec Corporation | Laser light source |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4899617B2 (en) | 2006-04-28 | 2012-03-21 | オムロン株式会社 | Optical transmission system, optical transmission module, electronic equipment |
| KR101040316B1 (en) * | 2009-07-28 | 2011-06-10 | (주) 빛과 전자 | Optical Bi-directional Transmitting and Receiving Module of Single Wavelength |
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2017
- 2017-04-27 KR KR1020170054009A patent/KR101917665B1/en active IP Right Grant
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2018
- 2018-04-24 WO PCT/KR2018/004755 patent/WO2018199602A1/en active Application Filing
- 2018-04-24 CN CN201880027302.4A patent/CN110546831A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1316669A (en) * | 2000-03-20 | 2001-10-10 | 朗迅科技公司 | Lift position optical shunting on optical component |
| CN101689746A (en) * | 2007-03-19 | 2010-03-31 | 金定洙 | Self-standing parallel plate beam splitter, method for manufacturing the same, and laser diode package structure using the same |
| CN101713850A (en) * | 2008-10-02 | 2010-05-26 | 韩国电子通信研究院 | Bidirectional optical transceiving and receiving apparatus |
| CN102546030A (en) * | 2010-12-14 | 2012-07-04 | 光电解决方案有限公司 | Optical transceiver using single-wavelength communication |
| CN103163602A (en) * | 2011-12-19 | 2013-06-19 | 鸿富锦精密工业（深圳）有限公司 | Photovoltaic module |
| CN102749684A (en) * | 2012-03-26 | 2012-10-24 | 武汉华工正源光子技术有限公司 | Laser transceiving device, manufacturing method thereof and method for improving temperature operation range thereof |
| US20150063398A1 (en) * | 2013-09-04 | 2015-03-05 | Nec Corporation | Laser light source |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018199602A1 (en) | 2018-11-01 |
| KR101917665B1 (en) | 2019-01-29 |
| KR20180120313A (en) | 2018-11-06 |
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