CN110544659A - novel quartz boat of glass passivation - Google Patents
novel quartz boat of glass passivation Download PDFInfo
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- CN110544659A CN110544659A CN201910948924.7A CN201910948924A CN110544659A CN 110544659 A CN110544659 A CN 110544659A CN 201910948924 A CN201910948924 A CN 201910948924A CN 110544659 A CN110544659 A CN 110544659A
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- quartz boat
- groove
- boat
- silicon wafer
- passivation
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 185
- 239000010453 quartz Substances 0.000 title claims abstract description 181
- 238000002161 passivation Methods 0.000 title claims abstract description 68
- 239000011521 glass Substances 0.000 title claims abstract description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 93
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 93
- 239000010703 silicon Substances 0.000 claims abstract description 93
- 238000005245 sintering Methods 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims description 14
- 238000004140 cleaning Methods 0.000 claims description 11
- 239000000843 powder Substances 0.000 abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 143
- 235000012431 wafers Nutrition 0.000 description 49
- 239000004065 semiconductor Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- AEEAZFQPYUMBPY-UHFFFAOYSA-N [I].[W] Chemical compound [I].[W] AEEAZFQPYUMBPY-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000002070 germicidal effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000005495 investment casting Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- CMJCEVKJYRZMIA-UHFFFAOYSA-M thallium(i) iodide Chemical compound [Tl]I CMJCEVKJYRZMIA-UHFFFAOYSA-M 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a novel glass passivation quartz boat, which comprises a quartz boat mechanism, wherein a first-stage quartz boat support, a quartz boat groove, a first-stage quartz boat, a main support, a second-stage quartz boat and a first-stage quartz boat on the quartz boat mechanism are arranged on the quartz boat mechanism, the inclination angle of the quartz boat groove of the first-stage quartz boat is 80 degrees, gas with a larger flow is required to be introduced during glass sintering, after the angle of a silicon wafer is adjusted, the impact of air flow on the silicon wafer is reduced, the damage of the silicon wafer is reduced, the width of the quartz boat groove is 10mm, residual glass powder in the boat groove is periodically cleaned, and the probability that the edge of the silicon wafer is stuck on the quartz boat is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor glass sintering, in particular to a novel glass passivated quartz boat.
background
quartz, also known as quartz glass, is a mineral composed of silicon dioxide.
The quartz glass is mainly used for electric light sources, semiconductors, new optical technologies and the like.
In the aspect of novel light source: can be used as high-pressure mercury lamp, long-arc xenon lamp, iodine-tungsten lamp, thallium iodide lamp, infrared lamp, germicidal lamp, etc.
semiconductor aspect: is an indispensable material in the production process of semiconductor materials and devices, such as crucibles for growing germanium and silicon single crystals, boat muffle tubes, bell jars and the like.
In the new technical field: the excellent performance of sound, light and electricity is used as an ultrasonic delay line on a radar, an infrared tracking direction finding, a prism of an infrared photograph, a communication, a spectrograph and a spectrophotometer, a lens, a reflection window of a large astronomical telescope, a high-temperature operation window, a reactor and a radioactive device; rocket, nose cone of missile, nozzle and radome: radio-insulating parts of satellites, radiation; a hot balance, a vacuum adsorption device, precision casting and the like.
The glass passivation chip is used for protecting PN junctions by using the fused glass and is used for producing high-voltage high-power rectifying devices, and the glass plays a role in reducing leakage current and improving reverse breakdown voltage. The common glass passivation protection process generally adopts a blade coating method, a light resistance method or an electrophoresis method to coat glass, then carries out high-temperature sintering on the glass, aims to remove organic components and carbon elements in the glass, solidifies after cooling to form a glass body with compact structure, good thermal stability and strong mechanical property, and a single wafer often has thousands of chips after photoetching and etching processes, so the uniformity of glass sintering is of great importance.
the quartz boat with 75 grooves is used for sintering at present, silicon wafers are vertically placed on the quartz boat when the sintering is carried out, and due to the fact that the silicon wafers are powdery before the glass sintering and become solid passivation layers after the sintering is completed, a large amount of glass powder is remained in the grooves of the quartz boat after the sintering is completed, and when the silicon wafer fragment rate of a station reaches 1.12%.
disclosure of Invention
The invention aims to provide a novel glass passivated quartz boat to solve the problems in the background technology.
In order to achieve the purpose, the invention provides the following technical scheme: the utility model provides a novel quartz boat of glass passivation, includes quartz boat mechanism, be equipped with the main support in the quartz boat mechanism, the top of main support is equipped with one-level quartz boat support, welded fastening between one-level quartz boat support and the main support, the top of one-level quartz boat support is close to and is equipped with the one-level quartz boat on the end at both ends, the bottom symmetry of main support is equipped with the second grade quartz boat, and the both ends end of second grade quartz boat and the inner wall welded connection of main support, the one-level quartz boat, the inside of second grade quartz boat all is equipped with quartz boat groove.
preferably, the width of the groove of the quartz boat is 10mm, and the depth of the groove is 15 mm.
preferably, the inclination angle of the quartz boat groove is 80 degrees, and the upper opening angle of the quartz boat groove is 60 degrees.
Preferably, the bottom of the main support is symmetrically provided with two semi-cylindrical grooves, and the distance between the groove cores of the two semi-cylindrical grooves is 100mm +/-0.1 mm.
preferably, a silicon wafer placing groove is formed in the upper portion of the quartz boat mechanism.
Preferably, the novel glass passivated quartz boat comprises the following steps:
A. cleaning the surface of a silicon wafer needing glass passivation;
B. placing the cleaned silicon wafer into a quartz boat groove of a first-stage quartz boat and a quartz boat groove of a second-stage quartz boat;
C. putting the quartz boat mechanism with the mounted silicon wafer into a sintering furnace for passivation;
D. And taking out the passivated silicon wafer.
Compared with the prior art, the invention has the beneficial effects that:
(1) the residual glass powder in the boat groove is cleaned regularly, so that the probability that the edge of the silicon wafer is stuck on the quartz boat is reduced;
(2) the technical scheme effectively reduces the probability of silicon wafer breakage, improves the yield and greatly reduces the cost of product passivation.
Drawings
FIG. 1 is a front view of the quartz boat mechanism of the present invention;
FIG. 2 is a side view of the quartz boat mechanism of the present invention;
FIG. 3 is a top view of the quartz boat mechanism of the present invention;
FIG. 4 is a cross-sectional view of the quartz boat groove of the present invention.
in the figure: 1. a quartz boat mechanism; 2. a first-stage quartz boat support; 3. a quartz boat trough; 4. a first-stage quartz boat; 5. a main support; 6. and a second-stage quartz boat.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-4, the present invention provides a technical solution: the utility model provides a novel quartz boat of glass passivation, includes quartz boat mechanism 1, and quartz boat mechanism 1's top is inside to be equipped with the silicon chip standing groove, is equipped with main support 5 on the quartz boat mechanism 1, and the bottom symmetry of main support 5 is equipped with two half-cylinder recesses, and interval 100mm 0.1mm between two half-cylinder recess groove cores.
the top of main support 5 is equipped with one-level quartz boat support 2, welded fastening between one-level quartz boat support 2 and the main support 5, and the top of one-level quartz boat support 2 is close to and is equipped with one-level quartz boat 4 on the end at both ends, and the bottom symmetry of main support 5 is equipped with second grade quartz boat 6, and the both ends end of second grade quartz boat 6 is connected with the inner wall welded connection of main support 5.
A novel glass passivated quartz boat comprises the following steps:
A. cleaning the surface of a silicon wafer needing glass passivation;
B. Placing the cleaned silicon wafer into a quartz boat groove 3 of a first-stage quartz boat 4 and a second-stage quartz boat 6;
C. Putting the quartz boat mechanism with the mounted silicon wafer into a sintering furnace for passivation;
D. And taking out the passivated silicon wafer.
Embodiment 1, a novel quartz boat for glass passivation, the passivation method comprises the following steps:
A. cleaning and drying the surface of a silicon wafer needing glass passivation;
B. Placing the cleaned silicon wafer into a quartz boat groove 3 of a first-stage quartz boat 4 and a second-stage quartz boat 6;
C. putting the quartz boat mechanism with the mounted silicon wafer into a sintering furnace for passivation;
D. and taking out the passivated silicon wafer.
In this embodiment, wash the silicon chip surface that needs the passivation earlier, place one-level quartz boat 4 with the silicon chip that washs the completion, the quartzy boat inslot 3 of second grade quartz boat 6, interval 100mm 0.1mm between two semi-cylindrical recess groove cores, one-level quartz boat 4, the inside of second grade quartz boat 6 all is equipped with quartzy boat groove 3, quartzy boat groove 3 width is 10mm, the groove depth 15mm, quartzy boat groove 3 inclination is 80 degrees, the top open angle of quartzy boat groove 3 is 60 degrees, the quartz boat mechanism that will install the silicon chip is put into the sintering furnace and is passivated, take out the silicon chip that the passivation was accomplished.
Embodiment 2, a novel quartz boat for glass passivation, the passivation method comprises the following steps:
A. cleaning the surface of a silicon wafer needing glass passivation;
B. placing the cleaned silicon wafer into a quartz boat groove 3 of a first-stage quartz boat 4 and a second-stage quartz boat 6;
C. putting the quartz boat mechanism with the mounted silicon wafer into a sintering furnace for passivation;
D. and taking out the passivated silicon wafer.
in this embodiment, earlier wash the silicon chip surface that needs the glass passivation, dry, place one-level quartz boat 4 with the silicon chip that washs the completion, the quartzy boat inslot 3 of second grade quartz boat 6, interval 100mm 0.2mm between two semi-cylindrical recess groove cores, one-level quartz boat 4, the inside of second grade quartz boat 6 all is equipped with quartzy boat groove 3, quartzy boat groove 3 width is 11mm, the groove depth 15mm, quartzy boat groove 3 inclination is 81 degrees, the top open angle of quartzy boat groove 3 is 60 degrees, put the quartz boat mechanism that has installed the silicon chip into the sintering furnace and carry out the passivation, take out the silicon chip that the passivation was accomplished.
Embodiment 3, a novel quartz boat for glass passivation, the passivation method comprises the following steps:
A. Cleaning the surface of a silicon wafer needing glass passivation;
B. Placing the cleaned silicon wafer into a quartz boat groove 3 of a first-stage quartz boat 4 and a second-stage quartz boat 6;
C. putting the quartz boat mechanism with the mounted silicon wafer into a sintering furnace for passivation;
D. and taking out the passivated silicon wafer.
in this embodiment, earlier wash the silicon chip surface that needs the glass passivation, place one-level quartz boat 4 with the silicon chip that washs the completion, the quartzy boat inslot 3 of second grade quartz boat 6, interval 100mm 0.3m between two semi-cylindrical recess groove cores, one-level quartz boat 4, the inside of second grade quartz boat 6 all is equipped with quartzy boat groove 3, quartzy boat groove 3 width is 12mm, the groove depth 15mm, quartzy boat groove 3 inclination is 82 degrees, the top open angle of quartzy boat groove 3 is 60 degrees, put the quartz boat mechanism of the silicon chip of having installed into the sintering furnace and carry out the passivation, take out the silicon chip that the passivation was accomplished.
embodiment 4, a novel quartz boat for glass passivation, the passivation method comprises the following steps:
A. Cleaning the surface of a silicon wafer needing glass passivation;
B. Placing the cleaned silicon wafer into a quartz boat groove 3 of a first-stage quartz boat 4 and a second-stage quartz boat 6;
C. putting the quartz boat mechanism with the mounted silicon wafer into a sintering furnace for passivation;
D. And taking out the passivated silicon wafer.
In this embodiment, earlier wash the silicon chip surface that needs the glass passivation, place one-level quartz boat 4 with the silicon chip that washs the completion, the quartzy boat inslot 3 of second grade quartz boat 6, interval 100mm 0.4m between two semi-cylindrical recess groove cores, one-level quartz boat 4, the inside of second grade quartz boat 6 all is equipped with quartzy boat groove 3, quartzy boat groove 3 width is 13mm, the groove depth 15mm, quartzy boat groove 3 inclination is 83 degrees, the top open angle of quartzy boat groove 3 is 60 degrees, put the quartz boat mechanism of the silicon chip of having installed into the sintering furnace and carry out the passivation, take out the silicon chip that the passivation was accomplished.
Embodiment 5, a novel quartz boat for glass passivation, the passivation method comprises the following steps:
A. Cleaning the surface of a silicon wafer needing glass passivation;
B. placing the cleaned silicon wafer into a quartz boat groove 3 of a first-stage quartz boat 4 and a second-stage quartz boat 6;
C. Putting the quartz boat mechanism with the mounted silicon wafer into a sintering furnace for passivation;
D. And taking out the passivated silicon wafer.
in this embodiment, earlier wash the silicon chip surface that needs the glass passivation, place one-level quartz boat 4 with the silicon chip that washs the completion, the quartz boat inslot 3 of second grade quartz boat 6, interval 100mm 0.5m between two semi-cylindrical recess groove cores, one-level quartz boat 4, the inside of second grade quartz boat 6 all is equipped with quartz boat groove 3, quartz boat groove 3 width is 14mm, the groove depth 15mm, quartz boat groove 3 inclination is 84 degrees, the top open angle of quartz boat groove 3 is 60 degrees, put the quartz boat mechanism that will install the silicon chip into the sintering furnace and passivate, take out the silicon chip that the passivation was accomplished.
Embodiment 6, a novel quartz boat for glass passivation, the passivation method comprises the following steps:
A. Cleaning the surface of a silicon wafer needing glass passivation;
B. Placing the cleaned silicon wafer into a quartz boat groove 3 of a first-stage quartz boat 4 and a second-stage quartz boat 6;
C. putting the quartz boat mechanism with the mounted silicon wafer into a sintering furnace for passivation;
D. And taking out the passivated silicon wafer.
in this embodiment, earlier wash the silicon chip surface that needs the glass passivation, place one-level quartz boat 4 with the silicon chip that washs the completion, the quartzy boat inslot 3 of second grade quartz boat 6, interval 100mm 0.6m between two semi-cylindrical recess groove cores, one-level quartz boat 4, the inside of second grade quartz boat 6 all is equipped with quartzy boat groove 3, quartzy boat groove 3 width is 15mm, the groove depth 15mm, quartzy boat groove 3 inclination is 85 degrees, the top open angle of quartzy boat groove 3 is 60 degrees, put the quartz boat mechanism of the silicon chip of having installed into the sintering furnace and carry out the passivation, take out the silicon chip that the passivation was accomplished.
embodiment 7, a novel quartz boat for glass passivation, the passivation method comprises the following steps:
A. Cleaning the surface of a silicon wafer needing glass passivation;
B. Placing the cleaned silicon wafer into a quartz boat groove 3 of a first-stage quartz boat 4 and a second-stage quartz boat 6;
C. Putting the quartz boat mechanism with the mounted silicon wafer into a sintering furnace for passivation;
D. And taking out the passivated silicon wafer.
In this embodiment, earlier wash the silicon chip surface that needs the glass passivation, place one-level quartz boat 4 with the silicon chip that washs the completion, the quartz boat inslot 3 of second grade quartz boat 6, interval 100mm 0.7m between two semi-cylindrical recess groove cores, one-level quartz boat 4, the inside of second grade quartz boat 6 all is equipped with quartz boat groove 3, quartz boat groove 3 width is 16mm, the groove depth 15mm, quartz boat groove 3 inclination is 86 degrees, quartz boat groove 3's top open angle is 60 degrees, put the quartz boat mechanism that will install the silicon chip into the sintering furnace and passivate, take out the silicon chip that the passivation was accomplished.
Through above embodiment, when the interval 100mm 0.1m between two semi-cylindrical recess groove cores of quartzy boat groove 3, one-level quartzy boat 4, the inside of second grade quartzy boat 6 all is equipped with quartzy boat groove 3, quartzy boat groove 3 is wide to be 16mm, the groove depth 15mm, quartzy boat groove 3 inclination is 80 degrees, can effectively reduce the broken probability of silicon chip when the top opening angle of quartzy boat groove 3 is 60 degrees, the yield is improved, greatly reduced the cost of product passivation.
the passivation method comprises the following steps: the method comprises the steps of firstly cleaning the surface of a silicon wafer needing glass passivation, placing the cleaned silicon wafer into a quartz boat groove 3 of a first-stage quartz boat 4 and a second-stage quartz boat 6, placing a quartz boat mechanism with the mounted silicon wafer into a sintering furnace for passivation, and taking out the passivated silicon wafer.
need let in the gas of great flow when adopting quartz boat mechanism 1 to carry out the glass sintering, after the angle of adjustment silicon chip, reduce the impact of air current to the silicon chip, reduce the damage of silicon chip, quartz boat groove width is 10mm in addition, regularly clears up remaining glass powder in the boat groove, reduces the probability that the silicon chip edge glues on the quartz boat, and this technical scheme effectively reduces the broken probability of silicon chip, improves the yields, greatly reduced the cost of product passivation.
The invention has the beneficial effects that:
(1) the residual glass powder in the boat groove is cleaned regularly, so that the probability that the edge of the silicon wafer is stuck on the quartz boat is reduced;
(2) the technical scheme effectively reduces the probability of silicon wafer breakage, improves the yield and greatly reduces the cost of product passivation.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. the utility model provides a novel quartz boat of glass passivation, includes quartz boat mechanism (1), its characterized in that: be equipped with main support (5) on quartz boat mechanism (1), the top of main support (5) is equipped with one-level quartz boat support (2), welded fastening between one-level quartz boat support (2) and main support (5), be equipped with one-level quartz boat (4) on the end that the top of one-level quartz boat support (2) is close to both ends, the bottom symmetry of main support (5) is equipped with second grade quartz boat (6), the inner wall welded connection of the both ends end of second grade quartz boat (6) and main support (5), one-level quartz boat (4), the inside of second grade quartz boat (6) all is equipped with quartz boat groove (3).
2. the novel quartz boat of claim 1, wherein: the width of the quartz boat groove (3) is 10mm, and the groove depth is 15 mm.
3. the novel quartz boat of claim 1, wherein: the inclination angle of the quartz boat groove (3) is 80 degrees, and the upper opening angle of the quartz boat groove (3) is 60 degrees.
4. The novel quartz boat of claim 1, wherein: the bottom of the main support (5) is symmetrically provided with two semi-cylindrical grooves, and the distance between the groove cores of the two semi-cylindrical grooves is 100mm +/-1 mm.
5. the novel quartz boat of claim 1, wherein: and a silicon wafer placing groove is formed in the upper part of the quartz boat mechanism (1).
6. The novel quartz boat for passivating glass, which is used for realizing the method of claim 1, comprises the following steps:
A. Cleaning the surface of a silicon wafer needing glass passivation;
B. Placing the cleaned silicon wafer into a quartz boat groove (3) of a first-stage quartz boat (4) and a second-stage quartz boat (6);
C. putting the quartz boat mechanism with the mounted silicon wafer into a sintering furnace for passivation;
D. And taking out the passivated silicon wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910948924.7A CN110544659A (en) | 2019-10-08 | 2019-10-08 | novel quartz boat of glass passivation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910948924.7A CN110544659A (en) | 2019-10-08 | 2019-10-08 | novel quartz boat of glass passivation |
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| Publication Number | Publication Date |
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| CN110544659A true CN110544659A (en) | 2019-12-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201910948924.7A Pending CN110544659A (en) | 2019-10-08 | 2019-10-08 | novel quartz boat of glass passivation |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101667535A (en) * | 2009-09-14 | 2010-03-10 | 南通明芯微电子有限公司 | Glass passivating method of silicon planar semiconductor device |
| CN102064233A (en) * | 2010-10-29 | 2011-05-18 | 常州亿晶光电科技有限公司 | Railboat of face contact type |
| CN206758416U (en) * | 2017-03-28 | 2017-12-15 | 济南兰星电子有限公司 | A kind of slide glass boat for glassivation |
| CN207149540U (en) * | 2017-09-18 | 2018-03-27 | 山东晶导微电子有限公司 | A kind of glassivation quartz boat |
| US20190019916A1 (en) * | 2017-07-14 | 2019-01-17 | Beijing Juntai Innovation Technology Co., Ltd. | Wafer supporting apparatus |
| CN210575873U (en) * | 2019-10-08 | 2020-05-19 | 江苏晟驰微电子有限公司 | Novel quartz boat of glass passivation |
-
2019
- 2019-10-08 CN CN201910948924.7A patent/CN110544659A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101667535A (en) * | 2009-09-14 | 2010-03-10 | 南通明芯微电子有限公司 | Glass passivating method of silicon planar semiconductor device |
| CN102064233A (en) * | 2010-10-29 | 2011-05-18 | 常州亿晶光电科技有限公司 | Railboat of face contact type |
| CN206758416U (en) * | 2017-03-28 | 2017-12-15 | 济南兰星电子有限公司 | A kind of slide glass boat for glassivation |
| US20190019916A1 (en) * | 2017-07-14 | 2019-01-17 | Beijing Juntai Innovation Technology Co., Ltd. | Wafer supporting apparatus |
| CN207149540U (en) * | 2017-09-18 | 2018-03-27 | 山东晶导微电子有限公司 | A kind of glassivation quartz boat |
| CN210575873U (en) * | 2019-10-08 | 2020-05-19 | 江苏晟驰微电子有限公司 | Novel quartz boat of glass passivation |
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