CN110544616B - Adjustable vacuum light-thermoelectric conversion solar cell and preparation method thereof - Google Patents
Adjustable vacuum light-thermoelectric conversion solar cell and preparation method thereof Download PDFInfo
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Abstract
The invention discloses an adjustable vacuum photo-thermal-electric conversion solar cell and a preparation method thereof, wherein the vacuum photo-thermal-electric conversion solar cell comprises a cathode structure and an anode structure; the cathode structure comprises a cathode substrate, a bottom gate electrode, a dielectric film and a cathode electrode which are sequentially stacked, the bottom gate electrode is a semiconductor with an energy band gap of 1-2 eV, the thickness of the dielectric film is 0.5-10 nm, and a gate voltage is applied between the bottom gate electrode and the cathode electrode. The vacuum photo-thermoelectric conversion solar cell provided by the invention can enable thermal electrons with corresponding energy to be emitted to the anode by adjusting the surface potential barrier of the cathode structure, so that more low-energy thermal electrons form cathode current, the reduction of conversion efficiency is small when the solar spectrum generates red shift or the light intensity is reduced, and the vacuum photo-thermoelectric conversion solar cell is simple in structure and easy to prepare. In addition, the MIS structure prepared by the two-dimensional atomic crystal can generate hot electrons directly tunneled, the energy loss of electrons is reduced, and the energy conversion efficiency of the device is further improved.
Description
Technical Field
The invention relates to the technical field of solar energy conversion, in particular to an adjustable vacuum photothermal-electric conversion solar cell and a preparation method thereof.
Background
Solar energy is an important approach to solve the energy crisis of the current generation, such as solar cells. How to improve the efficiency of the solar cell is an important target to be solved urgently for a long time in the field of solar energy conversion. Generally, solar energy conversion efficiency is mainly limited by the utilization of different energy photons in the solar spectrum by the solar cell. The related research can be divided into static and dynamic situations according to different solar irradiation conditions.
In the static case, solar irradiance is considered constant, i.e. the standard solar spectrum commonly used by the industry. The corresponding solar cell is therefore designed for this spectrum. Conventional solar photovoltaic cells can only absorb photons above the semiconductor band gap and energy above the band gap can affect cell performance in the form of waste heat. The vacuum light-thermoelectric conversion solar cell can realize energy conversion of ultraviolet light, visible light and infrared spectrum simultaneously in one device, so that the vacuum light-thermoelectric conversion solar cell is a static full-spectrum conversion solar cell with important application prospect.
In dynamic (i.e., real world) situations, solar irradiance can vary with season, weather, and different times of day. Therefore, the solar cells designed for the static standard solar spectrum described above are not always in optimal operating conditions. Especially when the solar spectrum is red-shifted or the light intensity is reduced, the conversion efficiency of the device is greatly reduced. For solar cells to operate continuously and efficiently, it is desirable that the devices maintain high conversion efficiency under varying solar radiation. Although the existing adjustable solar energy conversion technology can reduce the loss of the output power in the equivalent circuit impedance by scheduling the output current and the voltage so as to optimize the output performance of the solar cell under different solar irradiation conditions, the scheduling technology does not substantially improve the conversion efficiency of the device under different solar irradiation conditions. To further improve the overall efficiency of solar energy conversion, it is necessary to simultaneously improve the conversion efficiency of the solar cell to the full spectrum in a static state and to substantially improve the conversion efficiency of the solar cell under dynamically changing solar irradiation conditions, especially when the solar spectrum undergoes a red shift or a light intensity drop.
Therefore, it is necessary to develop a solar cell having less reduction in conversion efficiency when the solar spectrum is red-shifted or the light intensity is reduced.
Disclosure of Invention
The invention provides an adjustable vacuum light-thermoelectric conversion solar cell, aiming at overcoming the defect that the conversion efficiency of the solar cell in the prior art is greatly reduced when the solar spectrum generates red shift and/or the light intensity is reduced, wherein the cathode structure of the provided vacuum light-thermoelectric conversion solar cell is based on a metal-insulator-semiconductor structure, thermal electrons with corresponding energy can be emitted to an anode by adjusting the surface potential barrier of the cathode structure, more low-energy thermal electrons form cathode current when the solar spectrum generates red shift or the light intensity is reduced, so that high-efficiency vacuum thermoelectric conversion is realized, the conversion efficiency of the solar cell is reduced when the solar spectrum generates red shift or the light intensity is reduced, and the adjustable vacuum light-thermoelectric conversion solar cell is simple in structure and easy to prepare.
Another object of the present invention is to provide a method for manufacturing the solar cell.
In order to solve the technical problems, the invention adopts the technical scheme that:
an adjustable vacuum photothermal-electric conversion solar cell comprises a cathode structure and an anode structure;
the cathode structure comprises a cathode substrate, a bottom gate electrode, a dielectric film and a cathode electrode which are sequentially stacked, wherein the bottom gate electrode is a semiconductor with an energy band gap of 1-2 eV, the thickness of the dielectric film is 0.5-10 nm, and a gate voltage is applied between the bottom gate electrode and the cathode electrode;
the anode structure comprises an anode electrode and an anode substrate which are arranged in a stacked mode;
the anode structure is positioned on one side of the cathode electrode of the cathode structure; the cathode structure is positioned on one side of the anode electrode of the anode structure.
The cathode electrode, the dielectric film and the bottom gate electrode constitute a metal-insulator-semiconductor structure, referred to as MIS structure for short.
The working principle is as follows: when the vacuum photo-thermoelectric conversion solar cell works, the bottom grid electrode in the cathode structure is placed under sunlight for irradiation, the anode structure is placed at the cold end, and a certain negative voltage is applied between the bottom grid electrode of the cathode structure and the cathode electrode to serve as grid voltage. The MIS cathode is used in the vacuum photothermal-electric conversion solar cell for the first time. The vacuum light-heat-electricity conversion solar cell utilizes the MIS structure on the cathode substrate to adjust the surface potential barrier of the cathode structure to enable thermal electrons with corresponding energy to be emitted to the anode, so that enhanced cathode emission current is obtained under the weak solar irradiation condition (spectrum red shift or light intensity reduction), the overall conversion efficiency is improved, and the reduction of the conversion efficiency of the solar cell is small when the solar spectrum is red shift or the light intensity is reduced.
In summary, the cathode structure of the vacuum photothermal-electric conversion solar cell is based on the metal-insulator-semiconductor structure, and the MIS structure can be used to adjust a corresponding surface potential barrier when the solar spectrum undergoes red shift or light intensity drops, so that thermal electrons with corresponding energy are emitted to the anode to form more cathode currents, and high-efficiency vacuum photothermal-electric conversion is realized, so that the solar cell has small reduction in conversion efficiency when the solar spectrum undergoes red shift or light intensity drops, and is simple in structure and easy to prepare.
Preferably, the cathode substrate is composed of infrared absorbing glass.
Preferably, the bottom gate electrode is a semiconductor having an energy band gap of 1.4 eV.
Preferably, the bottom gate electrode has a thickness of 100nm or less.
Preferably, the dielectric film is composed of one or more of boron nitride, silicon dioxide, aluminum oxide, or hafnium oxide.
Preferably, the dielectric film is composed of hexagonal boron nitride.
Preferably, the dielectric film has a thickness of 3 nm.
Preferably, the cathode electrode is composed of graphene and/or a metal material; the metal material is one or the combination of more than two of gold, copper, tungsten or chromium.
More preferably, the cathode electrode is composed of graphene.
Preferably, the thickness of the cathode electrode is 10nm or less. More preferably, the thickness of the cathode electrode is a monoatomic layer thickness.
The cathode employing the MIS structure described above may be referred to as a MIS cathode.
In order to improve the efficiency of the vacuum photothermal-electric conversion solar cell, it is necessary to reduce the drive power of the MIS cathode as much as possible. Therefore, tunneling electrons in the MIS cathode need to tunnel directly through the dielectric film and the cathode electrode. In view of ballistic transport of electrons in two-dimensional atomic crystals, to realize the above-described MIS cathode for direct tunneling, the dielectric thin film may preferably be formed using two-dimensional atomic crystals such as hexagonal boron nitride, and the cathode electrode may preferably be formed using two-dimensional atomic crystals such as graphene.
The tunneling electrons in the MIS cathode based on the two-dimensional atomic crystal are directly tunneled, and the electrons lose less energy due to scattering, so that the conversion efficiency is higher.
Therefore, preferably, the dielectric film is composed of hexagonal boron nitride and the cathode electrode is composed of graphene.
Preferably, the anode substrate is made of one or more of glass, ceramic, silicon wafer, and metal plate.
Preferably, the metal plate is one or a combination of two or more of copper, stainless steel or tungsten.
The anode electrode may be a low work function material. Preferably, the anode electrode is graphene, lanthanum hexaboride or a diamond film.
The invention also provides a preparation method of the vacuum photothermal-electric conversion solar cell, which comprises the following steps:
s1, preparing a cathode substrate and an anode substrate;
s2, preparing a bottom gate electrode on the cathode substrate;
s3, preparing a dielectric film on the bottom gate electrode;
s4, preparing a cathode electrode on the dielectric film;
and S5, preparing an anode electrode on the anode substrate.
The specific preparation method is the prior art and can be obtained by routine selection of the technical personnel according to the prior art.
Preferably, step s1. includes the step of cleaning the cathode substrate and the anode substrate.
Compared with the prior art, the invention has the beneficial effects that:
the cathode structure of the vacuum light-heat-electricity conversion solar cell is based on a metal-insulator-semiconductor structure, the surface potential barrier of the cathode structure can be adjusted by applying proper grid voltage to the MIS structure, thermal electrons with corresponding energy can be emitted to an anode, more thermal electrons can form cathode current when solar spectrum generates red shift or light intensity is reduced, and vacuum light-heat-electricity conversion with higher efficiency is realized, so that the conversion efficiency of the solar cell is reduced when the solar spectrum generates red shift or light intensity is reduced, and the vacuum light-heat-electricity conversion solar cell is simple in structure and easy to prepare.
In addition, when the dielectric film is made of hexagonal boron nitride and the cathode electrode is made of graphene, the MIS cathode based on the two-dimensional atomic crystal is obtained, tunneling electrons in the MIS cathode based on the two-dimensional atomic crystal are directly tunneled, energy loss of the electrons due to scattering is small, and the MIS cathode has higher conversion efficiency.
Drawings
Fig. 1 is a schematic structural view of a vacuum photothermal-to-electric conversion solar cell according to the present invention. Fig. 1(a) is a front view of the cathode structure and the anode structure, and fig. 1(b) is a left side view of the cathode structure and the anode structure. The "90-degree rotation" means that the device is rotated 90 ° in the horizontal direction, and the view is changed from fig. 1(a) to fig. 1 (b).
Fig. 2 is a schematic view of a general vacuum photo-thermal conversion device. Fig. 2 was obtained according to prior art literature (j. Schwede, i.bargatin, d.c.riley, b.e.hardin, s.j.rosenthal, y.sun, f.schmitt, p.pianetta, r.t.howe, z. -x.shen, n.a.meloh, photo-enhanced thermal emission for solar controllers systems, Nature mater.9,762-767 (2010)).
Fig. 3 is a schematic view of a method for manufacturing a vacuum photothermal-to-electric conversion solar cell in example 2 of the present invention. Fig. 3(b) and 3(c) show different views of the same structure, fig. 3(b) is a front view, and fig. 3(c) is a left side view. The "90 degree rotation" means that the device is rotated 90 degrees in the horizontal direction, and the view is changed from fig. 3(b) to fig. 3 (c).
Fig. 4 is a simulation calculation result of the maximum conversion efficiency of the vacuum photothermal-electric conversion solar cell of the present invention and the conventional device under different solar irradiation intensities. Wherein the solar irradiance in fig. 4(a) is obtained by varying the light intensity under a standard solar spectrum, fig. 4(b) is the calculation result using the solar spectrum of fig. 4(a), fig. 4(c) is the corresponding gate voltage of the result in fig. 4(b), the solar irradiance in fig. 4(d) is obtained in consideration of the spectrum red shift in the actual case, fig. 4(e) is the calculation result using the solar spectrum of fig. 4(d), and fig. 4(f) is the corresponding gate voltage of the result in fig. 4 (e). The solid and dashed lines represent the results of the present invention and the prior device, respectively.
Fig. 5 is a calculation result of hourly conversion efficiency of the vacuum photothermal-to-electric conversion solar cell of the present invention and the conventional device under different weather conditions. Where fig. 5(a) is a sunny result, fig. 5(b) is a rainy result, fig. 5(c) is a cloudy result, and the solid and dotted lines represent the results of the present invention and the conventional device, respectively.
In fig. 1 to 3, 1 is a cathode substrate, 2 is a bottom gate electrode, 3 is a dielectric film, 4 is a cathode electrode, 5 is an anode substrate, and 6 is an anode electrode.
Detailed Description
The present invention will be further described with reference to the following embodiments.
The same or similar reference numerals in the drawings of the embodiments of the present invention correspond to the same or similar components; in the description of the present invention, it is to be understood that the terms "upper", "lower", "left", "right", "top", "bottom", "inner", "outer", and the like, if any, are used in the orientations and positional relationships indicated in the drawings only for the convenience of describing the present invention and simplifying the description, but not for indicating or implying that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and therefore the terms describing the positional relationships in the drawings are used for illustrative purposes only and are not to be construed as limiting the present patent.
Furthermore, if the terms "first," "second," and the like are used for descriptive purposes only, they are used for mainly distinguishing different devices, elements or components (the specific types and configurations may be the same or different), and they are not used for indicating or implying relative importance or quantity among the devices, elements or components, but are not to be construed as indicating or implying relative importance.
The raw materials in the examples are all commercially available;
reagents, methods and apparatus used in the present invention are conventional in the art unless otherwise indicated.
Example 1
A tunable vacuum photothermal-electric conversion solar cell, as shown in FIG. 1, includes a cathode structure and an anode structure. The cathode structure comprises a cathode substrate 1, a bottom gate electrode 2, a dielectric film 3 and a cathode electrode 4 which are sequentially stacked. A gate voltage is applied between the bottom gate electrode 2 and the cathode electrode 4. The anode structure includes an anode electrode 6 and an anode substrate 5 which are stacked. The anode structure is positioned on one side of the cathode electrode 4 of the cathode structure; the cathode structure is located on the anode electrode 6 side of the anode structure.
Fig. 2 shows a schematic structural diagram of a conventional vacuum photo-thermal conversion device. The basic structure of the device comprises a cathode substrate 1, a cathode electrode 4, an anode substrate 5 and an anode electrode 6.
When the two devices shown in fig. 1 and fig. 2 work normally, the cathode substrate needs to be placed under the sunlight for irradiation, the anode substrate needs to be placed at the cold end, and power is output between the cathode and the anode. Different from the existing device, the vacuum photothermal-electric conversion solar cell needs to apply a certain negative voltage between the bottom gate electrode and the cathode electrode to adjust the barrier height of thermal electrons, so that the corresponding thermal electrons under different solar irradiation tunnel to the cathode and form cathode current.
(1) Based on the simulation calculation results of the conversion efficiency of the vacuum light-to-heat conversion solar cell of fig. 1 and the conventional vacuum light-to-heat conversion device of fig. 2 as a function of the solar irradiation intensity.
The simulation calculations were performed in MATLAB. In the calculation program, the conversion efficiency of the existing device is calculated by using a method in documents (j.schwed, i.barbatin, d.c.riley, b.e.hardin, s.j.rosenthal, y.sun, f.schmitt, p.pianetta, r.t.howe, z. -x.shen, n.a.melosh, photo-enhanced thermal emission for solar controllers systems, Nature mater.9,762-767 (2010)), and the conversion efficiency of the device of the present invention takes into account the cathode current of the MIS structure and subtracts the driving power of the MIS structure. To calculate the cathode current and the driving power of the MIS structure, we consider using thermal field emission theory to describe the tunneling current of the MIS structure under different gate voltages, and consider that no scattering occurs in tunneling electrons.
Setting the dielectric film of the device of the invention in figure 1 as hexagonal boron nitride with the thickness of 3nm, the work function of the anode in figures 1 and 2 as 0.9eV and the temperature as 500K, and irradiating under 1000 times of standard solar radiation (the irradiation intensity is 1000W/m)2) The optimum parameters of the inventive device of fig. 1 and the existing device of fig. 2 can be obtained. It is composed ofIn the device of the invention in fig. 1, the band gap of the bottom gate electrode is 1.4eV, the work function of the cathode is 2.5eV, and the contact barrier between the bottom gate electrode and the hexagonal boron nitride is 1.37V. For the prior device of fig. 2, the band gap of the cathode is also 1.4eV, and the electron affinity is 1.22 eV. With the devices of fig. 1 and 2 both at the above static optimum parameters, the variation of the conversion efficiency of the device at different solar irradiation intensities was numerically calculated. The different solar irradiance in fig. 4(a) is obtained by changing the irradiance intensity while maintaining the standard solar spectrum, and the different solar irradiance in fig. 4(d) is obtained by taking into account the red-shift of the solar spectrum in the actual case. Fig. 4(b) and 4(e) are calculated results using the solar spectra in fig. 4(a) and 4(d), respectively, in which the solid line and the dotted line represent simulation results of the device of the present invention and the conventional device, respectively. Fig. 4(c) and 4(f) show the corresponding gate voltage results. The calculation of the solar spectrum in practice is found in the literature (R.E.Brid, C.Riordan, Simple solar spectral model for direct and direct radiation on horizontal and complete plans at the surface for close coatings, J.Climate applied. Metal.25, 87-97 (1986)). It can be seen that when the irradiation intensity is more than 500W/m without considering the spectral red shift2The conversion efficiency of the device of the invention is close to but slightly less than that of the prior device. This is because the device of the present invention requires additional power to drive the MIS cathode. But when the irradiation intensity is less than 500W/m2The conversion efficiency of the device of the invention is higher than that of the prior device. Whereas the above-mentioned intensity value of the reversed irradiation rises to 650W/m in consideration of the spectral red shift2I.e. the irradiation intensity is less than 650W/m2The conversion efficiency of the device of the invention is higher than that of the prior device. This is because the spectral red-shift reduces the energy of the photons, which reduces the conversion efficiency of the prior devices. Furthermore, the intensity of the irradiation was reduced from 1000 to 200W/m2The required gate voltage for the device of the present invention increases from about 0.2 to about 0.7V. The increased gate voltage is used to reduce the surface potential barrier of the cathode structure, so that more low-energy thermal electrons at low irradiation intensity are emitted to the anode to form enhanced cathode current and reduce the rotation thereofThe efficiency of the converter decreases. In either case, the enhancement of the device of the present invention at lower irradiation intensities is more pronounced. Therefore, the vacuum photo-thermoelectric conversion device based on the direct tunneling MIS cathode can achieve continuously higher energy conversion efficiency under different irradiation conditions, particularly spectral red shift or low light intensity.
(2) The results of simulated calculations of hourly conversion efficiency based on the inventive device of fig. 1 and the prior device of fig. 2 under different weather conditions.
Because the solar spectrum under the actual condition needs to know the parameters which are difficult to obtain, such as the turbidity, the water vapor humidity and the like of the air, the hourly conversion efficiency of the device provided by the invention and the conventional device is calculated by adopting the calculation result in the graph 4(a) and combining the hourly solar irradiation intensity in Wuhan city under different weathers, and the red shift condition of the solar spectrum is not considered. Fig. 5(a) shows the result on a sunny day, fig. 5(b) shows the result on a rainy day, and fig. 5(c) shows the result on a cloudy day. By multiplying the solar irradiance at each moment by the corresponding conversion efficiency and adding up, an overall day's output power can be obtained. The results show that compared with the prior device, the total output power of the device is respectively improved by 0.8 percent, 2.5 percent and 3 percent in sunny days, rainy days and cloudy days. It should be noted that this boost value will be higher if the red shift of the solar spectrum is taken into account.
Example 2
A method for preparing a vacuum photothermal-electric conversion solar cell, as shown in FIG. 3, first preparing an infrared absorption glass as a cathode substrate 1 (FIG. 3 (a)); then depositing a silicon thin film thereon as a bottom gate electrode 2 (fig. 3(b) and 3 (c)); then preparing a hexagonal boron nitride dielectric film 3 (fig. 3(d)) with the thickness of 3nm on the bottom gate electrode; finally, a graphene cathode electrode 4 is prepared on the dielectric thin film (fig. 3 (e)). In the preparation of the cathode, a region where the graphene electrode does not overlap with the bottom gate electrode in the vertical direction needs to be ensured for leading.
The fabrication of MIS cathodes based on other novel low dimensional nanomaterials of the present invention can be performed according to the basic steps of example 2.
It should be noted that the vacuum light-to-heat-electricity conversion solar cell in fig. 1 is not limited to the single structure shown in the figure, and may be applied in series between a plurality of structures to increase the output voltage.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (10)
1. An adjustable vacuum photothermal-electric conversion solar cell is characterized by comprising a cathode structure and an anode structure;
the cathode structure comprises a cathode substrate (1), a bottom gate electrode (2), a dielectric film (3) and a cathode electrode (4) which are sequentially stacked, wherein the bottom gate electrode (2) is a semiconductor with an energy band gap of 1-2 eV, the thickness of the dielectric film (3) is 0.5-10 nm, and a gate voltage is applied between the bottom gate electrode (2) and the cathode electrode (4); the direction of the applied voltage is from the bottom gate electrode (2) to the cathode electrode (4);
the anode structure comprises an anode electrode (6) and an anode substrate (5) which are arranged in a stacked mode;
the anode structure is positioned on one side of a cathode electrode (4) of the cathode structure; the cathode structure is located on the anode electrode (6) side of the anode structure.
2. The vacuum photothermal-to-electric conversion solar cell according to claim 1, wherein the dielectric thin film (3) is composed of one or two or more of boron nitride, silicon dioxide, aluminum oxide, or hafnium dioxide.
3. The vacuum photothermal conversion solar cell according to claim 1, wherein the dielectric thin film (3) is composed of hexagonal boron nitride.
4. The vacuum photothermal conversion solar cell according to any one of claims 1 to 3, wherein the thickness of the dielectric thin film (3) is 3 nm.
5. The vacuum photothermal conversion solar cell according to claim 1, wherein the cathode substrate (1) is composed of an infrared absorbing glass.
6. The vacuum photothermal conversion solar cell according to claim 1, wherein the bottom gate electrode (2) is a semiconductor having an energy band gap of 1.4 eV.
7. The vacuum photothermal conversion solar cell according to claim 1, wherein the cathode electrode (4) is composed of graphene and/or a metal material; the metal material is one or the combination of more than two of gold, copper, tungsten or chromium.
8. The vacuum photothermal conversion solar cell according to claim 1, wherein the anode substrate (5) is composed of one or more of glass, ceramic, silicon wafer, or metal plate.
9. The vacuum photothermal-to-electric conversion solar cell according to claim 1, wherein the anode electrode (6) is a graphene, lanthanum hexaboride, or diamond thin film.
10. The method for manufacturing a vacuum photothermal-to-electric conversion solar cell according to any one of claims 1 to 9, comprising the steps of:
s1, preparing a cathode substrate and an anode substrate;
s2, preparing a bottom gate electrode on the cathode substrate;
s3, preparing a dielectric film on the bottom gate electrode;
s4, preparing a cathode electrode on the dielectric film;
and S5, preparing an anode electrode on the anode substrate.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4094703A (en) * | 1976-12-30 | 1978-06-13 | Cornell Research Foundation | Solar energy converter |
| US4281280A (en) * | 1978-12-18 | 1981-07-28 | Richards John A | Thermal electric converter |
| CN102187425A (en) * | 2008-10-16 | 2011-09-14 | 利兰·斯坦福青年大学托管委员会 | Photon enhanced thermionic emission |
| CN107393804A (en) * | 2017-08-04 | 2017-11-24 | 南京理工大学 | A kind of vacuous solar energy electrooptical device |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4094703A (en) * | 1976-12-30 | 1978-06-13 | Cornell Research Foundation | Solar energy converter |
| US4281280A (en) * | 1978-12-18 | 1981-07-28 | Richards John A | Thermal electric converter |
| CN102187425A (en) * | 2008-10-16 | 2011-09-14 | 利兰·斯坦福青年大学托管委员会 | Photon enhanced thermionic emission |
| CN107393804A (en) * | 2017-08-04 | 2017-11-24 | 南京理工大学 | A kind of vacuous solar energy electrooptical device |
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