CN110542870B - Compensating circuit and method for sensitivity and zero temperature drift of Hall sensor integrated chip - Google Patents
Compensating circuit and method for sensitivity and zero temperature drift of Hall sensor integrated chip Download PDFInfo
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- CN110542870B CN110542870B CN201910729983.5A CN201910729983A CN110542870B CN 110542870 B CN110542870 B CN 110542870B CN 201910729983 A CN201910729983 A CN 201910729983A CN 110542870 B CN110542870 B CN 110542870B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0023—Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration
- G01R33/0029—Treating the measured signals, e.g. removing offset or noise
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0094—Sensor arrays
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
Abstract
A compensation circuit for sensitivity and zero temperature drift in a Hall sensor integrated chip comprises a Hall sensitive element, an amplifier, an adder, a buffer, a gain adjustment module, a zero adjustment module, a temperature sensor, a stress sensor, an ADC (analog-to-digital converter), a control processing circuit, a first DAC, a second DAC, a factory temperature compensation coefficient memory, a factory stress compensation coefficient memory, a user gain correction value memory and a user zero offset correction value memory. And correspondingly provides a compensation circuit for sensitivity and zero temperature drift in the Hall sensor integrated chip. The invention greatly improves the sensitivity and the zero temperature drift compensation precision, improves the performance index of the sensor, simultaneously meets the requirements of customers on sensitivity and zero temperature compensation in the production or use process of the sensor, realizes the temperature compensation of the sensitivity and the zero temperature drift compensation. But also to respond quickly to changes in the external magnetic field.
Description
Technical Field
The invention relates to a Hall sensor integrated chip, in particular to a Hall sensor integrated chip with sensitivity and zero temperature drift compensation.
Background
The existing Hall sensor chip can be used for manufacturing a current sensor for current measurement, based on the Hall effect, the magnetic field generated by the Hall chip induced current outputs a Hall voltage signal, and the size of the signal is proportional to the size of the magnetic field generated by the current. The performance of a hall-effect based current sensor, such as the sensitivity and output zero of the hall chip, is affected by the index parameters of the hall chip. The sensitivity is the ratio of the output signal of the Hall chip to the proportional change of the magnetic field where the Hall chip is located, and the output zero point is the static voltage output of the Hall sensor chip under the zero magnetic field.
When the Hall sensor works, the ambient temperature can change, and the change of the ambient temperature can influence the sensitivity and the drift of the output zero point. The sensitivity drift is influenced by the change of the amplification factor of the signal processing gain in the chip, the drift of the output zero point is the direct current offset of the static voltage output signal of the Hall sensor chip under a zero magnetic field, and the direct current offset is the offset of an amplifier in the signal processing circuit.
In particular, due to the inherent temperature characteristics of a semiconductor device, the device performance may vary due to temperature variations. The semiconductor device has positive temperature coefficient and negative temperature coefficient due to different doping materials and doping concentrations in the semiconductor process. The signal processing circuit inside the hall sensor chip is affected by the temperature coefficients of different devices, and the gain and offset of the amplifier can slightly change at different temperatures, so that the sensitivity and the output zero point of the hall sensor chip are changed.
Secondly, the change of temperature can affect the packaging of the Hall sensor chip and the structure of the Hall current sensor to change. Packaging changes of the chip can generate stress, and the stress can affect the performance of the Hall sensor chip, especially the sensitive characteristics of a Hall element in the Hall sensor chip. Especially, in the assembling process of most of the existing Hall current sensors, the pouring sealant is used for fixing the Hall sensor chip and the iron core, namely, the pouring sealant can be in direct seamless contact with the Hall sensor chip. The temperature change can cause the pouring sealant to expand or contract, so that the expansion coefficient and the stress of the sealant are changed. Both of which affect the packaging of the chip. This effect manifests itself to a large extent as stress-squeeze, which further affects the sensitivity and the static output zero point of the hall sensor chip.
In summary, when the temperature of the working environment changes, the sensitivity offset and the zero drift of the hall sensor chip are affected by three key factors. The temperature coefficient of the semiconductor device inside the Hall sensor chip is inherent, and the stress generated by the influence of the temperature on the packaging of the Hall sensor chip is stress. And thirdly, the influence of pouring sealant in the assembling process of the Hall current sensor. The changes caused by the temperature influence are collectively called temperature drift, namely sensitivity temperature drift and output zero temperature drift.
At present, most hall sensor chips adopt an analog compensation technology, for example, a piezoresistor and the like, so that the sensitivity and the offset of an output zero point generated along with the temperature can be adjusted, but the sensitivity and the precision of the output zero point are usually sacrificed. In addition, analog compensation techniques are fixed and not suitable for compensation and calibration that changes in production or in the field.
While hall sensor chips with digital circuitry tend to be slower than sensors with analog circuitry, in other words, hall sensor chips with digital circuitry do not respond well to rapidly changing magnetic fields.
Disclosure of Invention
The present invention is directed to overcome the above-mentioned deficiencies in the prior art and to provide a compensation circuit for sensitivity and zero temperature drift in a hall sensor integrated chip, which can be applied to a hall sensor chip having an analog signal link, and can realize fast response and temperature compensation of sensitivity and zero by combining the analog signal link with a digital circuit for sensitivity and zero temperature drift compensation.
The invention also correspondingly provides a method for compensating the sensitivity and the zero point temperature drift in the Hall sensor integrated chip, so that the quick compensation of the sensitivity and the zero point temperature drift can be realized.
The technical scheme adopted by the invention for solving the problems is as follows:
the utility model provides a sensitivity and compensation circuit of temperature drift at zero point among hall sensor integrated chip which characterized in that: the device comprises a Hall sensitive element, an amplifier, an adder, a buffer, a gain adjustment module, a zero point adjustment module, a temperature sensor, a stress sensor, an ADC (analog-digital converter), a control processing circuit, a first DAC (digital-analog converter), a second DAC (digital-analog converter), a factory temperature compensation coefficient memory, a factory stress compensation coefficient memory, a user gain correction value memory and a user zero point offset correction value memory;
the Hall sensitive element detects the magnitude of a surrounding magnetic field according to the Hall effect;
the amplifier amplifies the Hall voltage output by the Hall array;
the adder adds the output signal of the amplifier and the output signal of the zero point adjusting circuit and then outputs the sum to the buffer;
the buffer buffers and outputs the output signal of the adder, and the load capacity of the output signal is increased;
the gain adjusting module controls the gain of the amplifier, so that the sensitivity of the Hall sensor chip is controlled;
the zero point adjusting module realizes the control of the zero point offset of the Hall sensor chip;
the temperature sensor measures the temperature of the working environment of the Hall sensor chip;
the stress sensor is used for measuring the stress borne by the Hall chip;
on one hand, the ADC digitizes the output value of the temperature sensor and then outputs the digitized output value to the control processing circuit to identify the current temperature; on the other hand, the output value of the stress sensor is digitized and then output to the control processing circuit to identify the magnitude of the current stress value;
the control processing circuit receives the current temperature value, judges the current temperature value and the temperature compensation area, reads the factory compensation coefficients at two ends of the temperature area by a table look-up method, and calculates the compensation coefficient of the current temperature value TC by an interpolation method; on the other hand, the magnitude of the current stress value is received, then the current stress value and the stress compensation value are judged, then factory compensation coefficients at two ends of the stress area are read through a table look-up method, and then the compensation coefficient of the current stress value is calculated; finally, carrying out algorithm fusion on the compensation coefficient of the current temperature value, the compensation coefficient of the current stress value and the user correction value, calculating a combined correction value, and transmitting the combined correction value to the first DAC and the second DAC;
the first DAC and the second DAC convert digital signals into analog signals and are respectively connected with the gain adjustment module and the zero point adjustment module;
the factory temperature compensation coefficient memory stores the compensation coefficients of the gains and the zero points in different temperature areas;
the factory stress compensation coefficient memory stores the compensation coefficients of the gains and the zero points of different stress areas;
and the user gain correction value memory and the user zero offset correction value memory are used for respectively storing the gain correction value and the zero offset correction value.
Preferably, the Hall sensitive element forms a Hall array on the surface of the silicon wafer in a symmetrical array form by utilizing a semiconductor process, so that the signal-to-noise ratio of effective signals can be effectively improved, and the influence of a surrounding stray magnetic field is reduced.
Preferably, the ADC adopts a 2-order sigma-delta ADC structure, and high-precision analog-to-digital conversion is realized by oversampling without consuming too much power consumption.
Preferably, the amplifier adopts a low-offset chopper amplifier, the signal is modulated to a high frequency and then amplified, and then the signal is demodulated to a low-frequency output, so that part of 1/f noise can be eliminated.
Preferably, the temperature sensor measures the temperature by using the temperature coefficient of the difference value Δ VBE between the PN junction voltages of two different current densities to be proportional to the temperature.
Preferably, the stress sensor measures the stress using a change in a silicon piezoresistive resistance.
Preferably, the user gain correction value memory and the user zero offset correction value memory are EEPROM memories, and can be erased and written for many times.
Correspondingly, the method for compensating the sensitivity and the zero temperature drift in the Hall sensor integrated chip is characterized by comprising the following steps of: through the compensation circuit, the outside temperature and pressure are measured to compensate the sensitivity and the zero temperature drift.
Compared with the prior art, the invention has the advantages that: the invention detects the current temperature by using a temperature sensor through the delivery temperature and the stress compensation coefficient stored in the chip, and calculates the compensation coefficient of the current temperature by a table look-up method and an internal interpolation method; detecting the currently borne stress by using a stress sensor, and calculating a compensation coefficient under the current stress value by using a table look-up method and an internal interpolation method; and meanwhile, the correction value of the user is read, the three are combined to establish a combined correction coefficient, and the sensitivity and the zero temperature drift are compensated, so that the sensitivity and the zero temperature drift compensation precision are greatly improved, the performance index of the sensor is improved, the requirements of customers on the sensitivity and the zero temperature compensation in the production or use process of the sensor are met, the sensitivity temperature compensation is realized, and the zero temperature drift compensation is realized.
The signal amplification processing in the Hall sensor chip is realized by adopting an analog circuit, and the change of an external magnetic field can be quickly responded.
Drawings
Fig. 1 is a schematic structural diagram of a compensation circuit for sensitivity and zero temperature drift in a hall sensor integrated chip according to an embodiment of the present invention.
Detailed Description
The invention is further explained by the embodiment in the following with the attached drawings.
As shown in fig. 1, a compensation circuit for sensitivity and zero temperature drift in a hall sensor chip includes a hall sensor, an amplifier, an adder, a buffer, a gain adjustment module, a zero adjustment module, a temperature sensor, a stress sensor, an ADC, a control processing circuit, a DAC1, a DAC2, a factory temperature compensation coefficient memory, a factory stress compensation coefficient, a memory user gain correction value memory, and a user zero offset correction value memory.
The Hall sensitive element is connected with the amplifier, the Hall sensitive element induces the size of a magnetic field to generate Hall voltage, and the amplifier amplifies the Hall voltage.
The gain adjusting module is connected with the amplifier and controls the gain of the amplifier to control the sensitivity of the chip. The adder is connected with the output of the amplifier, the zero point adjusting module and the buffer, and the zero point adjustment of the sensor chip and the output of the output signal are achieved.
The temperature sensor is connected with the ADC, the temperature sensor realizes the measurement of the working temperature of the sensor chip, and the temperature value is converted by the ADC and is read by the control processing circuit.
The stress sensor is connected with the ADC, the stress sensor realizes the measurement of the working stress of the sensor chip, and the stress value is converted by the ADC and is read by the control processing circuit.
The factory temperature calibration coefficient memory is connected with the control processing circuit and is used for storing compensation coefficients of different temperature areas of the gain and the zero point.
The factory stress calibration coefficient memory is connected with the control processing circuit and is used for storing compensation coefficients of different stress areas of the gain and the zero point.
The user gain correction value memory, the user zero offset correction value memory, the input of DAC1, the input of DAC2 and the control processing circuitry are connected.
The output of DAC1 is connected to the gain adjustment module, and the output of DAC2 is connected to the zero adjustment module.
The data stored in the factory temperature compensation coefficient memory is analyzed as follows.
1. The working temperature range of the chip is divided, and if the working range of the chip is-40 to 120 degrees, 5 correction temperature points can be selected, and the whole working temperature range is divided into 4 blocks. For example, TC1 corresponds to-40 degrees, TC2 corresponds to 0 degrees, TC3 corresponds to 40 degrees, TC4 corresponds to 80 degrees, and TC5 corresponds to 120 degrees.
2. At a selected calibration temperature point, e.g., TC3, i.e., 40 degrees, the gain and zero offset of the sensor chip are measured and then calibration coefficients for the gain and zero offset are established at temperature T3.
3. At selected other calibration temperature points, the gain and zero offset of the sensor are measured, and then calibration coefficients for the gain and zero offset are established.
4. And storing the gain of the selected correction temperature point and the correction coefficient of the zero offset into a factory temperature compensation coefficient memory.
The data stored in the factory stress compensation coefficient memory is analyzed below.
a. The working stress range of the chip is divided, and if the working range of the stress borne by the chip is 10MPa to 200MPa, 5 corrected stress points can be selected, and the whole working stress temperature range is divided into 4 blocks. For example, 10MPa for ST1, 50MPa for ST2, 100MPa for ST3, 150MPa for ST4 and 200MPa for ST 5.
b. At a selected corrected stress point, e.g., ST3, i.e., 100MPa, the gain and zero offset of the sensor chip are measured and then the correction coefficients for the gain and zero offset at stress point ST3 are established.
c. At selected other calibration stress points, the gain and zero offset of the sensor are measured, and then calibration coefficients for the gain and zero offset are established.
d. And storing the gain of the selected correction stress point and the correction coefficient of the zero point offset into a factory stress compensation coefficient memory.
The working principle and the compensation method of the compensation circuit for the sensitivity and the zero temperature drift in the Hall sensor chip are as follows.
1. The hall sensor chip works.
After the chip is electrified, the Hall element starts to work, the Hall element induces an external magnetic field to generate Hall voltage, the amplifier amplifies the Hall voltage, the gain adjusting circuit controls the amplification factor of the amplifier, the output of the amplifier and the output of the zero point adjusting circuit are added through the adder and output to the buffer, and the buffer finally realizes the output of voltage signals.
2. And (4) sensitivity temperature compensation.
After the chip circuit is powered on, the temperature sensor detects the current working temperature TC of the chip, data conversion is carried out through the ADC, the control processing circuit reads the current temperature value, then the temperature area where the current temperature value TC is located is judged, and the temperature T is supposed to be between TC2 and TC 3. The control processing circuit reads out the gain correction coefficients at two ends of the temperature area, then carries out interpolation calculation, and establishes the gain correction value under the current temperature value TC. In the same way, the stress sensor detects the stress borne by the chip and establishes a gain correction value under the current stress value ST. And then receiving the gain correction value in the user gain correction value memory, and establishing a combined gain correction value by algorithm fusion of the three values, and sending the combined gain correction value to the DAC1 for the gain adjusting circuit to control the gain of the amplifier so as to compensate the sensitivity drift.
3. And compensating the zero offset temperature.
Similarly, after the chip circuit is powered on, the temperature sensor detects the current working temperature TC of the chip, data conversion is carried out through the ADC, the control processing circuit reads the current temperature value, then the temperature area where the current temperature value TC is located is judged, and the temperature TC is assumed to be between TC2 and TC 3. And the control processing circuit reads the zero offset correction coefficients at the two ends of the temperature area, then carries out interpolation calculation and establishes the zero offset correction value under the current temperature value TC. And in the same way, the stress sensor detects the stress borne by the chip and establishes a zero correction value under the current stress value ST. And then receiving the zero offset correction value in the user zero offset correction value memory, fusing the three values through an algorithm to establish a combined zero offset correction value, and sending the combined zero offset correction value to the DAC2 for the zero adjustment circuit to adjust the zero offset output by the Hall sensor chip so as to compensate the drift of the zero output.
The Hall sensor integrated chip adopts the built-in temperature sensor, realizes the measurement of the working temperature of the Hall sensor chip and provides a temperature reference value for the temperature compensation circuit.
The built-in stress sensor is adopted in the Hall sensor integrated chip, so that the stress magnitude borne by the Hall sensor chip is measured, and a reference value is provided for stress circuit compensation.
According to the Hall sensor integrated chip, the key temperature point is selected for calibrating the whole working temperature range of the sensor, the factory temperature compensation coefficient is written into the memory, the chip can perform automatic temperature compensation through a table look-up method, and the consistency of the performance of the chip in the working temperature range is ensured.
According to the Hall sensor integrated chip, the factory stress compensation coefficient is written into the memory by selecting key stress points in the whole working stress range of the sensor for calibration, and the chip can perform automatic stress compensation through a table look-up method, so that the consistency of the performance of the chip in the whole working stress range is ensured.
The Hall sensor integrated chip provided by the invention can realize the calibration of sensitivity and zero point temperature drift of the sensor under the influence of pouring sealant stress in production or in field use by adding a user memory, storing the gain correction value and the zero point offset correction value and fusing the factory temperature compensation coefficient and the factory stress compensation coefficient.
Claims (8)
1. Sensitivity and zero point temperature drift's compensating circuit among hall sensor integrated chip, its characterized in that: the device comprises a Hall sensitive element, an amplifier, an adder, a buffer, a gain adjustment module, a zero point adjustment module, a temperature sensor, a stress sensor, an ADC (analog to digital converter), a control processing circuit, a first DAC (digital to analog converter), a second DAC, a factory temperature compensation coefficient memory, a factory stress compensation coefficient memory, a user gain correction value memory and a user zero point offset correction value memory;
the Hall sensitive element detects the magnitude of a surrounding magnetic field according to the Hall effect;
the amplifier amplifies the Hall voltage output by the Hall array;
the adder adds the output signal of the amplifier and the output signal of the zero point adjusting circuit and then outputs the sum to the buffer;
the buffer buffers and outputs the output signal of the adder, and the load capacity of the output signal is increased;
the gain adjusting module controls the gain of the amplifier, so that the sensitivity of the Hall sensor chip is controlled;
the zero point adjusting module realizes the control of the zero point offset of the Hall sensor chip;
the temperature sensor measures the temperature of the working environment of the Hall sensor chip;
the stress sensor is used for measuring the stress borne by the Hall chip;
on one hand, the ADC digitizes the output value of the temperature sensor and then outputs the digitized output value to the control processing circuit to identify the current temperature; on the other hand, the output value of the stress sensor is digitized and then output to the control processing circuit to identify the magnitude of the current stress value;
the control processing circuit receives the current temperature value, judges the current temperature value and the temperature compensation area, reads the factory compensation coefficients at two ends of the temperature area by a table look-up method, and calculates the compensation coefficient of the current temperature value TC by an interpolation method; on the other hand, the magnitude of the current stress value is received, then the current stress value and the stress compensation value are judged, then factory compensation coefficients at two ends of the stress area are read through a table look-up method, and then the compensation coefficient of the current stress value is calculated; finally, carrying out algorithm fusion on the compensation coefficient of the current temperature value, the compensation coefficient of the current stress value and the user correction value, calculating a combined correction value, and transmitting the combined correction value to the first DAC and the second DAC;
the first DAC and the second DAC convert digital signals into analog signals and are respectively connected with the gain adjustment module and the zero point adjustment module;
the factory temperature compensation coefficient memory stores the compensation coefficients of the gains and the zero points in different temperature areas;
the factory stress compensation coefficient memory stores the compensation coefficients of the gains and the zero points of different stress areas;
and the user gain correction value memory and the user zero offset correction value memory are used for respectively storing the gain correction value and the zero offset correction value.
2. The compensation circuit for sensitivity and zero temperature drift in a Hall sensor integrated chip according to claim 1, wherein: the Hall sensitive element forms a Hall array on the surface of a silicon chip in a symmetrical array form by utilizing a semiconductor process.
3. The compensation circuit for sensitivity and zero temperature drift in a Hall sensor integrated chip according to claim 1, wherein: the ADC adopts a 2-order sigma-delta ADC structure.
4. The compensation circuit for sensitivity and zero temperature drift in a Hall sensor integrated chip according to claim 1, wherein: the amplifier adopts a low-offset chopper amplifier, modulates and amplifies signals to high frequency, and then demodulates the signals to low frequency for output.
5. The compensation circuit for sensitivity and zero temperature drift in a Hall sensor integrated chip according to claim 1, wherein: the temperature sensor realizes temperature measurement by utilizing the fact that the temperature coefficient of the voltage difference value delta VBE of the PN junctions with two different current densities is in direct proportion to the temperature.
6. The compensation circuit for sensitivity and zero temperature drift in a Hall sensor integrated chip according to claim 1, wherein: the stress sensor measures stress using changes in silicon piezoresistive resistance.
7. The compensation circuit for sensitivity and zero temperature drift in a Hall sensor integrated chip according to claim 1, wherein: the user gain correction value memory and the user zero offset correction value memory adopt EEPROM memories.
8. A method for compensating sensitivity and zero temperature drift in a Hall sensor integrated chip is characterized in that: the compensation of sensitivity and zero temperature drift is carried out by measuring the temperature and pressure of the outside world by means of the compensation circuit according to any one of claims 1 to 7.
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Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN114144898B (en) * | 2020-04-26 | 2022-11-04 | 核心光电有限公司 | Temperature control for Hall bar sensor calibration |
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| CN116772904A (en) * | 2023-08-22 | 2023-09-19 | 杭州辰控智能控制技术有限公司 | Signal compensation method of magnetic encoder, magnetic encoder and calibration system |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103105509A (en) * | 2013-01-10 | 2013-05-15 | 上海步略科技有限公司 | Nonlinear correction method of zero temperature drift of acceleration sensor |
| CN103140770A (en) * | 2010-06-30 | 2013-06-05 | 莱姆知识产权股份有限公司 | Autonomously calibrated magnetic field sensor |
| CN204964074U (en) * | 2015-08-27 | 2016-01-13 | 金仁贵 | Single scale intergration pressure sensor signal modulate circuit |
| CN105387859A (en) * | 2015-11-20 | 2016-03-09 | 中船重工西安东仪科工集团有限公司 | Temperature drift error compensation method of MEMS (Micro-electromechanical System) sensor group |
| CN105806371A (en) * | 2016-04-29 | 2016-07-27 | 国网上海市电力公司 | Temperature and pressure dynamic compensation method for sensor |
| CN107356269A (en) * | 2015-06-23 | 2017-11-17 | 迈来芯电子科技有限公司 | Hall sensor and method through stress and temperature-compensating |
| CN207488350U (en) * | 2017-10-24 | 2018-06-12 | 启东双赢电子科技有限公司 | A kind of included temperature and zero migration compensation high-precision hall current sensor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7980138B2 (en) * | 2007-10-29 | 2011-07-19 | Infineon Technologies Ag | Integrated circuit with stress sensing element |
| GB201319627D0 (en) * | 2013-11-06 | 2013-12-18 | Melexis Technologies Nv | Hall sensor readout system with offset determination using the hall element itself |
-
2019
- 2019-08-08 CN CN201910729983.5A patent/CN110542870B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103140770A (en) * | 2010-06-30 | 2013-06-05 | 莱姆知识产权股份有限公司 | Autonomously calibrated magnetic field sensor |
| CN103105509A (en) * | 2013-01-10 | 2013-05-15 | 上海步略科技有限公司 | Nonlinear correction method of zero temperature drift of acceleration sensor |
| CN107356269A (en) * | 2015-06-23 | 2017-11-17 | 迈来芯电子科技有限公司 | Hall sensor and method through stress and temperature-compensating |
| CN204964074U (en) * | 2015-08-27 | 2016-01-13 | 金仁贵 | Single scale intergration pressure sensor signal modulate circuit |
| CN105387859A (en) * | 2015-11-20 | 2016-03-09 | 中船重工西安东仪科工集团有限公司 | Temperature drift error compensation method of MEMS (Micro-electromechanical System) sensor group |
| CN105806371A (en) * | 2016-04-29 | 2016-07-27 | 国网上海市电力公司 | Temperature and pressure dynamic compensation method for sensor |
| CN207488350U (en) * | 2017-10-24 | 2018-06-12 | 启东双赢电子科技有限公司 | A kind of included temperature and zero migration compensation high-precision hall current sensor |
Non-Patent Citations (1)
| Title |
|---|
| A Fully Integrated Analog Compensation for the;Samuel Huber et al.;《IEEE SENSORS JOURNAL》;20150531;第2924-2933页 * |
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| Publication number | Publication date |
|---|---|
| CN110542870A (en) | 2019-12-06 |
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