CN110534572A - A kind of near infrared light regulation synapse transistor and preparation method thereof - Google Patents
A kind of near infrared light regulation synapse transistor and preparation method thereof Download PDFInfo
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- CN110534572A CN110534572A CN201910701893.5A CN201910701893A CN110534572A CN 110534572 A CN110534572 A CN 110534572A CN 201910701893 A CN201910701893 A CN 201910701893A CN 110534572 A CN110534572 A CN 110534572A
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Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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Abstract
The present invention discloses a kind of near infrared light regulation synapse transistor and preparation method thereof, and the preparation method of the transistor is the following steps are included: preparation MoSe2/Bi2Se3 heterojunction structure；The chlorobenzene solution of PMMA is configured, then MoSe2/Bi2Se3 heterojunction structure is mixed into the chlorobenzene solution of PMMA；MoSe2/Bi2Se3/PMMA layers are arranged on Si/SiO2 substrate layer, anneals 30-50 minutes under 100-140 degrees Celsius；Semiconductor layer is set on MoSe2/Bi2Se3/PMMA layers；Setting source electrode and drain electrode on the semiconductor layer.The synapse device of topological insulator material in the present invention based on MoSe2/Bi2Se3 shows the synaptic plasticity feature of apparent near infrared light control, the regulation of near infrared light luminous intensity so that photon cynapse device of the invention realizes the transformation from the corresponding short-term memory of short-term plasticity STP to the corresponding long-term memory of long-term plasticity LTP, for light-operated neural framework and its in neuromorphic calculating using providing hardware foundation.
Description
Technical field
The present invention relates to semiconductor transistor field more particularly to a kind of near infrared light regulation synapse transistor and its preparations
Method.
Background technique
Nerve, which inspires to calculate, can imitate efficiency in human brain, elasticity and multi-functional core feature, this can with gram
Take the data traffic bottleneck in von Neumann computing system.The framework that nerve inspires is constructed using novel artificial apparatus, it is ensured that
Memory and study more low-energy-consumption and density are higher.In human brain, information is collected and is stored temporarily in hippocampus, leads to
Different stimulations is crossed to learn to convert long-term memory (LTM) for short-term memory (STM).Learn in electronic equipment and remember to realize
The artificial synapse identification recalled, it is necessary to have the plasticity of different time scales.Therefore, short-term plasticity (STP) adjusts cynapse and passes
Transient Dynamics effect during passing, and the stabilizing effect of the long-term given stimulation of plasticity (LTP) display.Therefore, simulation
Synaptic plasticity STP and LTP make oneself to support complicated cognitive function and adaptive behavior mode.
Up to the present, the emphasis calculated is inspired to essentially consist in the electro photoluminescence inductive reactance shape in phase transition storage in nerve
State switching, memristor, and the memory based on transistor.With the power loss of existing electric signal and pass through electric signal meter
Intrinsic triggering selection is compared with space limitation, and the synapse device based on optical stimulation can be by with low-power and height
The photon of efficiency greatly adjusts synaptic plasticity.The technology of existing photon cynapse concentrates on having the ultraviolet of relatively large band gap
(UV) on sensitive material, the selection of the light-operated synapse transistor light control materials with bionic function is limited.
Therefore, the existing technology needs to be improved and developed.
Summary of the invention
The purpose of the present invention is to provide a kind of near infrared light regulation synapse transistors and preparation method thereof, and enriching has
The selection of the light-operated synapse transistor light control materials of bionic function.
Technical scheme is as follows:
The present invention provides a kind of near infrared light regulation synapse transistor, wherein includes: source electrode, drain electrode, semiconductor layer, close
Infrared light regulates and controls layer and substrate layer；The near infrared light regulation layer connects the semiconductor above the substrate layer
Layer connects above near infrared light regulation layer, and the source electrode and the drain electrode are all connected on semiconductor layer
Side, and the source electrode is not contacted with the drain electrode；The near infrared light regulation layer includes MoSe2/Bi2Se3Heterojunction structure.
The near infrared light regulation layer is MoSe2/Bi2Se3/ PMMA layers.
The present invention also provides a kind of preparation methods of near infrared light regulation synapse transistor, wherein the following steps are included:
Step S1, MoSe is set on substrate layer2/Bi2Se3/ PMMA layers, wherein the MoSe2/Bi2Se3/ PMMA layers is
MoSe2/Bi2Se3The mixed liquor of the chlorobenzene solution of heterojunction structure and PMMA is prepared；
Step S2, in MoSe2/Bi2Se3Semiconductor layer is set on/PMMA layers；
Step S3, setting source electrode and drain electrode on the semiconductor layer.
The MoSe2/Bi2Se3The preparation method of heterojunction structure the following steps are included:
Step S11, by Ph3Bi and (PhCH2)2Se2It is dissolved in oleyl amine, is ultrasonically treated, the first mixed liquor is made, it is described
Ph3Bi、(PhCH2)2Se2Molar ratio with oleyl amine is 80-120:60-90:3.
Step S12, by MoO2(acac)2、(PhCH2)2Se2It is dissolved in oleyl amine, is ultrasonically treated, the second mixed liquor is made,
The MoO2(acac)2、(PhCH2)2Se2Molar ratio with oleyl amine is 80-120:80-120:3.
Step S13, first mixed liquor is respectively put into 60-80 degrees Celsius of baking oven with the second mixed liquor and is heated.
Step S14, oleyl amine and oleic acid that volume ratio is 9-11:1 are placed in reactor, are added under 130-150 degrees Celsius
It is 30-60 minutes hot.
Step S15, the reactor is added in the first mixed liquor, is reacted 4-6 minutes under 270-290 degrees Celsius, then will
The reactor is added in second mixed liquor, reacts 15-25 minutes under 270-290 degrees Celsius, and removal of impurities, centrifuge separation, is done washing
It is dry, obtain MoSe2/Bi2Se3Heterojunction structure.
Ph described in step S113Bi、(PhCH2)2Se2Molar ratio be 100:75:3；MoO described in step S122
(acac)2、(PhCH2)2Se2Molar ratio with oleyl amine is 100:100:3；The volume ratio of oleyl amine described in step S14 and oleic acid is
10:1.The concentration of the chlorobenzene solution of the PMMA is 8-12 mg/ml.
The MoSe2/Bi2Se3/ PMMA layers is MoSe2/Bi2Se3The mixed liquor of the chlorobenzene solution of heterojunction structure and PMMA
Preparation method specifically includes: according to 10 milligrams of MoSe2/Bi2Se3The ratio of the chlorobenzene solution of heterojunction structure and 1 milliliter of PMMA is mixed
It closes, ultrasonic treatment.
It is described that MoSe is set on substrate layer2/Bi2Se3/ PMMA layers specifically includes: by MoSe2/Bi2Se3With the chlorine of PMMA
The mixed liquor of benzole soln is spin-coated on the dielectric layer of the substrate layer, spin speed 2500-3500rpm, continues spin-coating time
It is 30-50 seconds.
It is described in MoSe2/Bi2Se3Semiconductor layer is arranged on/PMMA layer to specifically include: in 4 × 10-4Under pa pressure, in institute
State MoSe2/Bi2Se3Pentacene is deposited with the rate of 0.1-0.2 angstroms of meter per second in/PMMA layers upper.
The device have the advantages that are as follows: MoSe is based in the present invention2/Bi2Se3Topological insulator material cynapse
Device shows the synaptic plasticity feature of apparent near infrared light control, and the regulation of near infrared light luminous intensity is so that of the invention
Photon cynapse device is realized from the corresponding short-term memory of short-term plasticity STP to the corresponding long-term memory of long-term plasticity LTP
Transformation, provide hardware foundation for the light-operated neural framework of near infrared light and its application in neuromorphic calculating, enrich
The selection of light-operated synapse transistor light control materials with bionic function.
Detailed description of the invention
Fig. 1 is the excitatory postsynaptic currents variation diagram under near infrared light impulse stimulation provided by the invention；
Fig. 2 is the structural schematic diagram that near infrared light provided by the invention regulates and controls synapse transistor.
Specific embodiment
The present invention provides a kind of near infrared light regulation synapse transistor, to make the purpose of the present invention, technical solution and effect
Clearer, clear, the present invention is described in more detail below.It should be appreciated that specific embodiment described herein is only used
In explaining the present invention, it is not intended to limit the present invention.
The present invention utilizes MoSe2/Bi2Se3Heterogeneous structural nano piece is light-operated prominent as electronics capture medium exploitation near infrared light
Transistor is touched, has the effect of inhibiting electronics backscattering and there is high carrier mobility.MoSe is based in the present invention2/
Bi2Se3The synapse device of topological insulator material show the synaptic plasticity feature of apparent near infrared light control, such as Fig. 1
It is shown, near infrared light luminous intensity regulation so that photon cynapse device of the invention realize it is corresponding by short-term plasticity STP
Transformation of the short-term memory to the corresponding long-term memory of long-term plasticity LTP calculates for light-operated neural framework and its in neuromorphic
In application provide a kind of synapse transistor and preparation method thereof that near infrared light can be used to regulate and control.
As shown in Figure 1, the near infrared light regulation synapse transistor prepared according to embodiment 1 is 790nm's in wavelength
Irradiation in 0.01 second by a definite date is carried out under monochromatic light.When intensity of illumination is 0.15mW/cm2When, excitatory postsynaptic currents value is short
After temporary optical pulse irradiation, the current value amplification of 1 Naan is shown on the basis of initial state value is 29 Naan；Work as light pulse
After irradiation, excitatory postsynaptic currents value is as the time decays and is returned to the numerical value of original state.When intensity of illumination is
1.65mW/cm2When, excitatory postsynaptic currents value is after of short duration optical pulse irradiation, in the base that initial state value is 22 Naans
The current value amplification of 9 Naans is shown on plinth and increases to 31 Naans；After optical pulse irradiation, excitatory postsynaptic currents value
As the time decays and is returned to the numerical value of 29 Naans.It can be seen that near infrared light regulation synapse transistor of the invention compared with
The short-term plasticity (STP) of nerve synapse in performance analog biology under Low light intensity near infrared light illumination, higher
The long-term plasticity (LTP) of nerve synapse in performance analog biology under the near infrared light illumination of intensity of illumination.
The preferred embodiment that the present invention provides a kind of near infrared light regulation synapse transistor is as shown in Figure 2, comprising: source electrode
1, drain electrode 2, semiconductor layer 3, near infrared light regulation layer 4 and substrate layer 5；The near infrared light regulation layer 4 is connected in institute
State the top of substrate layer 5, the semiconductor layer 3 connects above near infrared light regulation layer 4, the source electrode 1 with it is described
Drain electrode 2 all connects above semiconductor layer 3, and the source electrode is not contacted with the drain electrode.
Specifically, for the present invention using apical grafting touch bottom-gate-type transistor structure, the source of top contact structure, drain electrode are remote
It from substrate layer, is connected directly with semiconductor layer and dielectric layer, can be modified for dielectric layer in production, change semiconductor
Structure and pattern, to improve the carrier mobility of device；If desired semiconductor layer is exposed in test environment without covering,
When optimizing test for semiconductor layer, also can be used bottom contact type structure, i.e., semiconductor layer is set to source, on drain electrode, and
The structure contacted with dielectric layer.
The source electrode 1 is with drain electrode 2 using the good conductors such as gold, silver, copper, germanium, nickel metal material as source, drain electrode, thickness
For 20-40nm, source, drain electrode material are preferably gold, and thickness is preferably 30nm.
The semiconductor layer 3 is P-type semiconductor, and specific material is that pentacene, graphene, zinc oxide are one such, excellent
Be selected as pentacene, the semiconductor layer with a thickness of 20-40nm, preferably 30nm.
The near infrared light regulation layer 4 is that near infrared light regulation layer includes MoSe2/Bi2Se3Heterojunction structure, preferably
MoSe2/Bi2Se3/ PMMA layers, the PMMA is polymethyl methacrylate, and polystyrene (PS) or polyvinyl alcohol can also be used
(PVA) material substitution polymethyl methacrylate (PMMA).
The substrate layer 5 includes the silicon dioxide dielectric layers and polysilicon gate layer of 100 nanometer thickness, and the dielectric layer is located at institute
It states above silicon gate and contacts and fix with the silicon gate.The silicon gate also can be used a kind of replacement of following material: tungsten,
Metal silicide made of titanium, cobalt or nickel and polysilicon, or including tantalum, tungsten, tantalum nitride, titanium nitride metal.
The present invention also provides a kind of preparation methods of near infrared light regulation synapse transistor, comprising the following steps:
Step S1, MoSe is set on substrate layer2/Bi2Se3/ PMMA layers, wherein the MoSe2/Bi2Se3/ PMMA layers is
MoSe2/Bi2Se3The mixed liquor of the chlorobenzene solution of heterojunction structure and PMMA is prepared.
Step S2, in MoSe2/Bi2Se3Semiconductor layer is set on/PMMA layers.
Step S3, setting source electrode and drain electrode on the semiconductor layer.
The concentration of the chlorobenzene solution of PMMA is 8-12 mg/ml, preferably 10 mg/mls in the step S1.
MoSe in the step S12/Bi2Se3The preparation method of heterojunction structure is hot injection method, specifically includes the following steps:
Step S11, by Ph3Bi and (PhCH2)2Se2It is dissolved in oleyl amine, is ultrasonically treated, the first mixed liquor is made, it is described
Ph3Bi、(PhCH2)2Se2Molar ratio with oleyl amine is 80-120:60-90:3.
Step S12, by MoO2(acac)2、(PhCH2)2Se2It is dissolved in oleyl amine, is ultrasonically treated, the second mixed liquor is made,
The MoO2(acac)2、(PhCH2)2Se2Molar ratio with oleyl amine is 80-120:80-120:3.
Step S13, first mixed liquor is respectively put into 60-80 degrees Celsius of baking oven with the second mixed liquor and is heated.
Step S14, oleyl amine and oleic acid that volume ratio is 9-11:1 are placed in reactor, are added under 130-150 degrees Celsius
It is 30-60 minutes hot.
Step S15, the reactor is added in the first mixed liquor, is reacted 4-6 minutes under 270-290 degrees Celsius, then will
The reactor is added in second mixed liquor, reacts 15-25 minutes under 270-290 degrees Celsius, and removal of impurities, centrifuge separation, is done washing
It is dry, obtain MoSe2/Bi2Se3Heterojunction structure.
Ph described in step S113Bi、(PhCH2)2Se2Molar ratio be preferably 100:75:3, MoO described in step S122
(acac)2、(PhCH2)2Se2Molar ratio with oleyl amine is preferably 100:100:3, the volume of oleyl amine described in step S14 and oleic acid
Than being preferably 10:1, the MoSe obtained under this ratio2/Bi2Se3Effect is best in practical applications for heterojunction structure.
Step S13, first mixed liquor is respectively put into 60-80 degrees Celsius of baking oven with the second mixed liquor and is heated；This
As long as field technical staff plays it is understood that being that by the first mixed liquor in step S15 with the second mixed liquor
Effect, step S13 simultaneously be not limited in specification write sequence or label representated by sequence, as long as in step
Before S15.
The MoSe2/Bi2Se3/ PMMA layers is MoSe2/Bi2Se3The mixed liquor of the chlorobenzene solution of heterojunction structure and PMMA
Preparation method specifically includes: according to 10 milligrams of MoSe2/Bi2Se3The ratio of the chlorobenzene solution of heterojunction structure and 1 milliliter of PMMA is mixed
It closes, ultrasonic treatment；The ultrasonic treatment can make MoSe2/Bi2Se3The mixed liquor of the chlorobenzene solution of heterojunction structure and PMMA is uniform
Dispersion.
It is described that MoSe is set on substrate layer2/Bi2Se3/ PMMA layers specifically includes: by MoSe2/Bi2Se3With the chlorine of PMMA
The mixed liquor of benzole soln is spin-coated on the dielectric layer of the substrate layer, spin speed 2500-3500rpm, preferably
3000rpm, continuing spin-coating time is 30-50 seconds, preferably 40 seconds；It will be appreciated by persons skilled in the art that spin speed
And lasting spin-coating time can be according to required MoSe2/Bi2Se3/ PMMA layers of thickness is arranged.
It is described in MoSe2/Bi2Se3Semiconductor layer is arranged on/PMMA layer to specifically include: in 4 × 10-4Under pa pressure, in institute
State MoSe2/Bi2Se3Pentacene is deposited with the rate of 0.1-0.2 angstroms of meter per second in/PMMA layers upper, and preferably 0.1 angstrom of meter per second obtains
To pentacene semiconductor layer in homogeneous thickness, have good conductive property.
The step S3, on the semiconductor layer setting source electrode and drain electrode, specifically include:
Using the source electrode and drain electrode of sedimentation deposition device on the semiconductor layer, using good conductors such as gold, silver, copper, germanium, nickel
Metal material is as source, drain electrode, and with a thickness of 20-40nm, source, drain electrode material are preferably gold, and thickness is preferably 30nm, channel
The ratio of length (L) and channel width (W) is 1:20；In the embodiment with more excellent effect that the present invention provides, channel length
It (L) is 50 μm, channel width (W) is 1000 μm；And it will be appreciated by persons skilled in the art that this channel length and channel
Width can be arranged according to the work requirements of the size of device, source-drain current, source-drain voltage.
The present invention will be further illustrated in lower example embodiment.
Embodiment one
By the Ph of 0.05mol3(the PhCH of Bi and 0.0375mol2)2Se2It is dissolved in the 0.5mL i.e. oleyl amine of 0.0015mol,
The first mixed liquor is made in ultrasonic treatment.By the MoO of 0.05mol2(acac)2With (the PhCH of 0.05mol2)2Se2It is dissolved in 0.5mL
I.e. in 0.0015mol oleyl amine, the second mixed liquor is made in ultrasonic treatment.First mixed liquor and the second mixed liquor are put into 70
It is heated 4 minutes in degree Celsius baking oven.5 milliliters of oleyl amine and 0.5 milliliter of oleic acid are placed in 100 milliliters of three neck round bottom,
Heating, after being kept for 30 minutes under 140 degrees Celsius, cleans under strength magnetic agitation and pure argon gas flox condition.By matching
First mixed liquor is rapidly joined reactor by the syringe for having syringe needle, is reacted 5 minutes under 280 degrees Celsius, then pass through outfit
There is the syringe of syringe needle that the second mixed liquor is rapidly joined reactor, is reacted 20 minutes under 280 degrees Celsius, naturally cool to room
Temperature is centrifuged 3 times by supersound washing target product, and with hexane and ethanol solution, obtains after being dried in vacuo under 70 degrees Celsius
MoSe2/Bi2Se3Heterojunction structure.
Configuration concentration is the chlorobenzene solution of the PMMA of 10 mg/mls, according still further to 10 milligrams of MoSe2/Bi2Se3Hetero-junctions
Structure: the ratio of the chlorobenzene solution of 1 milliliter of PMMA mixes two solution, is uniformly dispersed to mixed solution within ultrasonic treatment 3 minutes.It will
MoSe2/Bi2Se3The commercial silicon dioxide dielectric layers with 100nm thickness are spin-coated on the mixed liquor of the chlorobenzene solution of PMMA
On the dielectric layer of silicon gate, spin speed 3000rpm, continuing spin-coating time is 40 seconds, is annealed 40 points at one hundred and twenty degrees centigrade
Clock.In 4 × 10-4Under pa pressure, in the MoSe2/Bi2Se3On/PMMA layer, with the rate vapor deposition pentacene half of 0.1 angstrom of meter per second
Conductor layer, pentacene semiconductor layer with a thickness of 30nm.Deposition prepares the source electrode of the device with a thickness of 30nm in pentacene-layer
And drain electrode, the channel length (L) and width (W) of device are respectively 50 μm and 1000 μm.
Embodiment two
By the Ph of 0.04mol3(the PhCH of Bi and 0.040mol2)2Se2It is dissolved in the 0.5mL i.e. oleyl amine of 0.0015mol, is surpassed
The first mixed liquor is made in sonication.By the MoO of 0.06mol2(acac)2With (the PhCH of 0.04mol2)2Se2It is dissolved in 0.5mL i.e.
In 0.0015mol oleyl amine, the second mixed liquor is made in ultrasonic treatment.First mixed liquor is put into 60 with the second mixed liquor to take the photograph
It is heated 5 minutes in family name's degree baking oven.3.6 milliliters of oleyl amine and 0.4 milliliter of oleic acid are placed in 100 milliliters of three neck round bottom,
Heating, after being kept for 30 minutes under 130 degrees Celsius, cleans under strength magnetic agitation and pure argon gas flox condition.By matching
First mixed liquor is rapidly joined reactor by the syringe for having syringe needle, is reacted 6 minutes under 270 degrees Celsius, then pass through outfit
There is the syringe of syringe needle that the second mixed liquor is rapidly joined reactor, is reacted 25 minutes under 270 degrees Celsius, naturally cool to room
Temperature is centrifuged 3 times by supersound washing target product, and with hexane and ethanol solution, obtains after being dried in vacuo under 70 degrees Celsius
MoSe2/Bi2Se3Heterojunction structure.
Configuration concentration is the chlorobenzene solution of the PMMA of 8 mg/mls, according still further to 10 milligrams of MoSe2/Bi2Se3Heterojunction structure:
The ratio of the chlorobenzene solution of 1 milliliter of PMMA mixes two solution, is uniformly dispersed to mixed solution within ultrasonic treatment 3 minutes.It will
MoSe2/Bi2Se3The commercial silicon dioxide dielectric layers with 100nm thickness are spin-coated on the mixed liquor of the chlorobenzene solution of PMMA
On the dielectric layer of silicon gate, spin speed 2500rpm, continuing spin-coating time is 50 seconds, is annealed 50 points under 100 degrees Celsius
Clock.In 4 × 10-4Under pa pressure, in the MoSe2/Bi2Se3Pentacene is deposited with the rate of 0.1 angstrom of meter per second in/PMMA layers upper
Semiconductor layer, pentacene semiconductor layer with a thickness of 20nm.Deposition prepares the source of the device with a thickness of 20nm in pentacene-layer
Pole and drain electrode, the channel length (L) and width (W) of device are respectively 50 μm and 1000 μm.
Embodiment three
By the Ph of 0.06mol3(the PhCH of Bi and 0.035mol2)2Se2It is dissolved in the 0.5mL i.e. oleyl amine of 0.0015mol, is surpassed
The first mixed liquor is made in sonication.By the MoO of 0.04mol2(acac)2With (the PhCH of 0.06mol2)2Se2It is dissolved in 0.5mL i.e.
In 0.0015mol oleyl amine, the second mixed liquor is made in ultrasonic treatment.First mixed liquor is put into 80 with the second mixed liquor to take the photograph
It is heated 3 minutes in family name's degree baking oven.6.6 milliliters of oleyl amine and 0.6 milliliter of oleic acid are placed in 100 milliliters of three neck round bottom,
Heating, keeps after sixty minutes, cleaning under strength magnetic agitation and pure argon gas flox condition under 150 degrees Celsius.By matching
First mixed liquor is rapidly joined reactor by the syringe for having syringe needle, is reacted 4 minutes under 290 degrees Celsius, then pass through outfit
There is the syringe of syringe needle that the second mixed liquor is rapidly joined reactor, is reacted 15 minutes under 290 degrees Celsius, naturally cool to room
Temperature is centrifuged 3 times by supersound washing target product, and with hexane and ethanol solution, obtains after being dried in vacuo under 70 degrees Celsius
MoSe2/Bi2Se3Heterojunction structure.
Configuration concentration is the chlorobenzene solution of the PMMA of 12 mg/mls, according still further to 10 milligrams of MoSe2/Bi2Se3Hetero-junctions
Structure: the ratio of the chlorobenzene solution of 1 milliliter of PMMA mixes two solution, is uniformly dispersed to mixed solution within ultrasonic treatment 3 minutes.It will
MoSe2/Bi2Se3The commercial silicon dioxide dielectric layers with 100nm thickness are spin-coated on the mixed liquor of the chlorobenzene solution of PMMA
On the dielectric layer of silicon gate, spin speed 3500rpm, continuing spin-coating time is 40 seconds, is annealed 30 points under 140 degrees Celsius
Clock.In 4 × 10-4Under pa pressure, in the MoSe2/Bi2Se3Pentacene is deposited with the rate of 0.2 angstrom of meter per second in/PMMA layers upper
Semiconductor layer, pentacene semiconductor layer with a thickness of 40nm.Deposition prepares the source of the device with a thickness of 40nm in pentacene-layer
Pole and drain electrode, the channel length (L) and width (W) of device are respectively 50 μm and 1000 μm.
It should be understood that the application of the present invention is not limited to the above for those of ordinary skills can
With improvement or transformation based on the above description, all these modifications and variations all should belong to the guarantor of appended claims of the present invention
Protect range.
Claims (10)
1. a kind of near infrared light regulates and controls synapse transistor characterized by comprising source electrode, drain electrode, semiconductor layer, near infrared light
Regulate and control layer and substrate layer；The near infrared light regulation layer connects above the substrate layer, the semiconductor layer contact
It is connected to above the near infrared light regulation layer, the source electrode and the drain electrode all connect above semiconductor layer, and institute
Source electrode is stated not contact with the drain electrode；The near infrared light regulation layer includes MoSe2/Bi2Se3Heterojunction structure.
2. near infrared light regulates and controls synapse transistor according to claim 1, which is characterized in that the near infrared light regulates and controls layer and is
MoSe2/Bi2Se3/ PMMA layers.
3. a kind of preparation method of near infrared light regulation synapse transistor, which comprises the following steps:
Step S1, MoSe is set on substrate layer2/Bi2Se3/ PMMA layers, wherein the MoSe2/Bi2Se3/ PMMA layers is
MoSe2/Bi2Se3The mixed liquor of the chlorobenzene solution of heterojunction structure and PMMA is prepared；
Step S2, in MoSe2/Bi2Se3Semiconductor layer is set on/PMMA layers；
Step S3, setting source electrode and drain electrode on the semiconductor layer.
4. the preparation method of near infrared light regulation synapse transistor according to claim 1, which is characterized in that the MoSe2/
Bi2Se3The preparation method of heterojunction structure the following steps are included:
Step S11, by Ph3Bi and (PhCH2)2Se2It is dissolved in oleyl amine, is ultrasonically treated, the first mixed liquor is made, wherein described
Ph3Bi、(PhCH2)2Se2Molar ratio be 80-120:60-90:3；
Step S12, by MoO2(acac)2、(PhCH2)2Se2It is dissolved in oleyl amine, is ultrasonically treated, the second mixed liquor is made, wherein
The MoO2(acac)2、(PhCH2)2Se2Molar ratio with oleyl amine is 80-120:80-120:3；
Step S13, first mixed liquor is respectively put into 60-80 degrees Celsius of baking oven with the second mixed liquor and is heated；
Step S14, oleyl amine and oleic acid that volume ratio is 9-11:1 are placed in reactor, heat 30- under 130-150 degrees Celsius
60 minutes；
Step S15, the reactor is added in the first mixed liquor, is reacted 4-6 minutes under 270-290 degrees Celsius, then by second
The reactor is added in mixed liquor, reacts 15-25 minutes under 270-290 degrees Celsius, obtains MoSe2/Bi2Se3Heterojunction structure.
5. the preparation method of near infrared light regulation synapse transistor according to claim 2, which is characterized in that in step S11
The Ph3Bi、(PhCH2)2Se2Molar ratio with oleyl amine is 100:75:3, MoO described in step S122(acac)2、(PhCH2)2Se2It is 100:100:3 with the molar ratio of oleyl amine, the volume ratio of oleyl amine described in step S14 and oleic acid is 10:1.
6. the preparation method of near infrared light regulation synapse transistor according to claim 1, which is characterized in that described in substrate
MoSe is set on layer2/Bi2Se3/ PMMA layers specifically includes: by MoSe2/Bi2Se3With the mixed liquor spin coating of the chlorobenzene solution of PMMA
On the dielectric layer of the substrate layer, anneal 30-50 minutes under 100-140 degrees Celsius.
7. the preparation method of near infrared light regulation synapse transistor according to claim 1, which is characterized in that the PMMA's
The concentration of chlorobenzene solution is 8-12 mg/ml.
8. the preparation method of near infrared light regulation synapse transistor according to claim 1, which is characterized in that the MoSe2/
Bi2Se3/ PMMA layers is MoSe2/Bi2Se3The preparation method of the mixed liquor of the chlorobenzene solution of heterojunction structure and PMMA specifically includes:
According to 10 milligrams of MoSe2/Bi2Se3The ratio of the chlorobenzene solution of heterojunction structure and 1 milliliter of PMMA mixes, ultrasonic treatment.
9. the preparation method of near infrared light regulation synapse transistor according to claim 4, which is characterized in that described to incite somebody to action
MoSe2/Bi2Se3The spin speed being spin-coated on the dielectric layer of the substrate layer with the mixed liquor of the chlorobenzene solution of PMMA is
2500-3500rpm, continuing spin-coating time is 30-50 seconds.
10. according to claim 1 near infrared light regulation synapse transistor preparation method, which is characterized in that it is described
MoSe2/Bi2Se3Semiconductor layer is arranged on/PMMA layer to specifically include: in 4 × 10-4Under pa pressure, in the MoSe2/Bi2Se3/
On PMMA layer, pentacene is deposited with the rate of 0.1-0.2 angstroms of meter per second.
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