CN110534424A - The lithographic method of SiC substrate - Google Patents
The lithographic method of SiC substrate Download PDFInfo
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- CN110534424A CN110534424A CN201810857556.0A CN201810857556A CN110534424A CN 110534424 A CN110534424 A CN 110534424A CN 201810857556 A CN201810857556 A CN 201810857556A CN 110534424 A CN110534424 A CN 110534424A
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- sic substrate
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- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 title claims abstract description 37
- 239000006227 byproduct Substances 0.000 claims abstract description 79
- 238000005530 etching Methods 0.000 claims abstract description 18
- 239000007789 gas Substances 0.000 claims description 31
- 241001012508 Carpiodes cyprinus Species 0.000 claims description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000012423 maintenance Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 229910018503 SF6 Inorganic materials 0.000 description 3
- 230000004087 circulation Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 description 1
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- WRQGPGZATPOHHX-UHFFFAOYSA-N ethyl 2-oxohexanoate Chemical compound CCCCC(=O)C(=O)OCC WRQGPGZATPOHHX-UHFFFAOYSA-N 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A kind of lithographic method of SiC substrate, etching carry out in reaction chamber, and lithographic method is alternately performed etch step and by-product discharge step；In etch step, performed etching to the indoor SiC substrate of reaction chamber is set to；Step is discharged in by-product, the indoor byproduct of reaction of reaction chamber is discharged.The lithographic method can reduce the possibility that byproduct of reaction is deposited in reaction chamber side wall and medium window surface, and the clean and maintenance period of equipment is substantially extended, and reduce the maintenance difficulties and workload of equipment.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, in particular to a kind of lithographic method of SiC substrate.
Background technique
With being constantly progressive for mechanics of communication, the application of GaN base HEMT microwave power device gradually increases.GaN base HEMT
The structural schematic diagram of device as shown in Figure 1, it is to grow on SiC substrate substrate such as with GaN for main AlGaN/GaN layers, with
Prepare the device architecture based on GaN.The manufacturing process of GaN base HEMT microwave power device includes positive technique and back process two
Major class, wherein positive technique is mainly to form the core function part of device, back process is mainly etched in SiC substrate 3
Metal lead wire is connected by through-hole 2 with positive GaN device, and GaN base HEMT microwave power device obtained is as shown in Figure 1, packet
Deposited metal 4, SiC substrate 3, AlGaN/GaN layer 5 are included, through-hole 2 runs through each layer, and source pad 1 is set on AlGaN/GaN layer 5.
In the back process of GaN base HEMT microwave power device, SiC via etch is very crucial step.In order to
Realize that big depth S iC via etch, general etch mask are typically chosen W metal.
Ni material as exposure mask can be worn off in etching process, and Ni can not be formed with etching reaction gas and can be waved
The gaseous by-product of hair, is present in inside reaction chamber in the form of solid particle, and a portion solid particle is with plasma
Body and air-flow are mobile, are taken away by vacuum pump body, and remaining major part solid particle can be attached to reaction chamber inner wall and medium window table
Face.These solid by-products gradually accumulate, can be since the attachment of itself is unstable or waits when running up to a certain degree
The bombardment of gas ions is acted on and is fallen in granular form in wafer surface.If fruit granule is fallen into SiC etching through hole, then can become
Micro- exposure mask hinders the progress normally etched, forms bamboo shoot shape object defect, causes component failure.
The etch rate of SiC is generally in the range of 0.3~1.5 μm/min, since the thickness of SiC substrate substrate is usually
50~100 μm, therefore whole etch period is up to a few hours, can generate a large amount of Ni byproducts build-up in the process.Just
In normal production process, every etching several to more than ten needs to stop production, cleans to the by-product inside reaction chamber
Maintenance, otherwise will affect product yield, be added significantly to the maintenance difficulties and workload of production.
Summary of the invention
The purpose of the present invention is to propose to a kind of lithographic methods of SiC substrate, to reduce the reaction by-product inside reaction chamber
Object deposition.
The invention proposes a kind of lithographic method of SiC substrate, the etching carries out in reaction chamber, the etching side
Method is alternately performed etch step and by-product discharge step；
In the etch step, performed etching to the indoor SiC substrate of the reaction chamber is set to；
Step is discharged in the by-product, the indoor byproduct of reaction of the reaction chamber is discharged.
Preferably, the reaction chamber pressure P1 that the etch step uses is reacted with what by-product discharge step used
The difference of chamber pressure P2 is not more than first threshold, and the top electrode radio-frequency power W1 and the by-product that the etch step uses are arranged
The difference for the top electrode radio-frequency power W2 that step uses out is not more than second threshold, the total gas couette Q1 that the etch step uses
And the difference for the total gas couette Q2 that the by-product discharge step uses is not more than third threshold value.
Preferably, the first threshold, the second threshold, the third threshold value are no more than 5%.
Preferably, the lower electrode radio-frequency power that the by-product discharge step uses is 0~200W.
Preferably, the ratio of the duration T 1 of the duration T 2 and etch step of the by-product discharge step
It is 5%~15%.
Preferably, the duration T 1 of the etch step is 10~600s, by-product discharge step it is lasting when
Between T2 be 1~60s.
Preferably, the reaction chamber pressure P2 that the by-product discharge step uses is 2-100mT.
Preferably, the top electrode radio-frequency power W2 that the by-product discharge step uses is 300~3000W.
Preferably, the total gas couette Q2 that the by-product discharge step uses is 100~1000sccm.
Preferably, the process gas that by-product discharge step uses include argon gas, helium, oxygen, nitrogen at least
One of them.
The beneficial effects of the present invention are etch step and by-product discharge step is alternately performed, in etch step, to SiC
Substrate performs etching, and step is discharged in by-product, reaction chamber is discharged in by-product, to reduce reaction by-product to the maximum extent
The possibility that object is deposited in reaction chamber side wall and medium window surface, the clean and maintenance period of equipment can substantially be extended, and be reduced
The maintenance difficulties and workload of equipment.
Method of the invention has other characteristics and advantages, these characteristics and advantages from the attached drawing being incorporated herein and with
It will be apparent in specific embodiment afterwards, or will be in the attached drawing and subsequent specific embodiment being incorporated herein
Middle to be stated in detail, the drawings and the detailed description together serve to explain specific principles of the invention.
Detailed description of the invention
Exemplary embodiment of the present is described in more detail in conjunction with the accompanying drawings, of the invention is above-mentioned and other
Purpose, feature and advantage will be apparent, wherein in exemplary embodiments of the present invention, identical appended drawing reference is usual
Represent same parts.
Fig. 1 shows the structural schematic diagram of GaN base HEMT device；
Fig. 2 shows the flow chart of the lithographic method of SiC substrate according to an exemplary embodiment of the present invention.
Description of symbols:
1- source pad, 2- through-hole, 3-SiC substrate, 4- deposited metal, 5-AlGaN/GaN layers.
Specific embodiment
The present invention will be described in more detail below with reference to accompanying drawings.Although showing the preferred embodiment of the present invention in attached drawing,
However, it is to be appreciated that may be realized in various forms the present invention and should not be limited by the embodiments set forth herein.On the contrary, providing
These embodiments are of the invention more thorough and complete in order to make, and can will fully convey the scope of the invention to ability
The technical staff in domain.
The embodiment of the present invention provides a kind of lithographic method of SiC substrate, and etching carries out in reaction chamber, the lithographic method
It is alternately performed etch step and by-product discharge step, in etch step, is carved to the indoor SiC substrate of reaction chamber is set to
Erosion；Step is discharged in by-product, the indoor byproduct of reaction of reaction chamber is discharged.
Lithographic method of the invention is alternately performed etch step and by-product discharge step, in etch step, to SiC substrate
It performs etching, step is discharged in by-product, the by-product generated during etch step is discharged instead with the effect of air-flow
Chamber is answered, byproduct of reaction is avoided to deposit in reaction chamber side wall and medium window surface, so as to extend the cleaning dimension of equipment
The period is protected, the maintenance difficulties and workload of equipment are reduced.
In one example, the reaction chamber that the reaction chamber pressure P1 and by-product discharge step that etch step uses are used
The difference of chamber pressure P2 is not more than first threshold, and top electrode radio-frequency power (exciting power) W1 and by-product that etch step uses are arranged
The difference for the top electrode radio-frequency power W2 that step uses out is not more than second threshold, the total gas couette Q1 and pair that etch step uses
The difference that the total gas couette Q2 that step uses is discharged in product is not more than third threshold value.
For plasma apparatus, when plasma is in stable state, small particle is easier to maintain etc. from
Without falling inside daughter；When plasma plays pendulum, such as the moment extinguished in build-up of luminance or aura, this is slightly
Small particle will be fallen because of the effect of air-flow or gravity, and under plasma unstable state, since sheath voltages are larger,
The bombardment effect of reaction chamber side wall and medium window surface can also be reinforced.Therefore, step is discharged in etch step and by-product
Close or identical reaction chamber pressure, top electrode radio-frequency power and total gas couette are kept, so that step is discharged in by-product,
Plasma will keep stable build-up of luminance state, and the by-product generated during etch step will continue to be maintained at
Inside gas ions, as the effect of air-flow is discharged reaction chamber.So as to reduce byproduct of reaction to the maximum extent anti-
The possibility for answering chamber sidewall and medium window surface to deposit.
Preferably, first threshold, second threshold, third threshold value be no more than 5% so that by-product discharge step it is medium from
Daughter keeps stable build-up of luminance state.It is further preferable that etch step and by-product discharge step use identical reaction
Chamber pressure, top electrode radio-frequency power and total gas couette.
In one example, the lower electrode radio-frequency power that by-product discharge step uses is 0~200W.In general, under
Electrode radio-frequency power is bigger, and it is better that effect is discharged in by-product, but the exposure mask that will cause SiC substrate surface is bombarded, and causes to select
Than reducing, therefore under normal circumstances, lower electrode radio-frequency power is no more than 200W.
In one example, the ratio of the duration T 1 of the duration T 2 and etch step of by-product discharge step
Value is 5%~15%.The duration of by-product discharge step is the 5%~15% of the duration of etch step, can be incited somebody to action
The by-product that etch step generates empties substantially.Preferably, which is 10%.
In one example, the duration of etch step is 1~7200s, preferably 10~600s；By-product discharge step
The rapid duration is 1~300s, preferably 1~60s.The duration of etch step can etch area, to etching according to SiC
Demand of rate etc. is because usually determining, wherein SiC etches that the area the big, and the by-product generated is more, correspondingly etch step
Duration should be shorter, if requiring height to etch rate, the etch step duration should be appropriately extended, and shortens by-product row
The step duration out.
In one example, the reaction chamber pressure P2 that by-product discharge step uses is 2-500mT, preferably 2-
100mT；In one example, the top electrode radio-frequency power W2 that by-product discharge step uses is 20~5000W, and preferably 300
~3000W；The total gas couette Q2 that by-product discharge step uses is 100~1000sccm.Correspondingly, the reaction of etch step
Chamber pressure P1, top electrode radio-frequency power W1 and total gas couette Q1 are respectively close to reaction chamber pressure P2, top electrode radio frequency
Power W2 and total gas couette Q2.
In one example, by-product discharge step is using the gas not chemically reacted with SiC, it may include argon gas,
At least one of helium, oxygen, nitrogen.Several gases can unrestricted choice, it is preferable that is discharged in etch step and by-product
Keep total gas couette constant in step.Preferably, the total gas couette that uses of by-product discharge step is 10~5000sccm,
Preferably 100~1000sccm.
In one example, the process gas that etch step uses includes sulfur hexafluoride, oxygen and argon gas, to obtain ideal
Etch topography.
Embodiment
Fig. 2 shows the flow chart of the lithographic method of SiC substrate according to an exemplary embodiment of the present invention.The SiC substrate
Lithographic method is alternately performed etch step and by-product discharge step, in etch step, to set on the indoor SiC substrate of reaction chamber
It performs etching；Step is discharged in by-product, the indoor byproduct of reaction of reaction chamber is discharged, step is discharged in etch step and by-product
Technique it is as follows:
Etch step: 10mT/SRF 1600W/BRF 700W/100SF6+30O2+ 20Ar/10s, i.e. reaction chamber pressure are
10mT, top electrode radio-frequency power are 1600W, and lower electrode radio-frequency power is 700W, and process gas flow is sulfur hexafluoride (SF6)
100sccm, oxygen (O2) 30sccm, argon gas (Ar) 20sccm, duration 10s；
Step is discharged in by-product: 10mT/SRF 1600W/BRF 0W/150Ar/1s, i.e. reaction chamber pressure are 10mT, on
Electrode radio-frequency power is 1600W, and lower electrode radio-frequency power is 0W, and process gas flow is argon gas (Ar) 150sccm, duration
For 1s.
Etch step is shown in Fig. 2 and reproduces three circulations of object discharge step, in actual process, time of circulation
Number is optional.
The SiC substrate lithographic method is repeatedly alternately performed etch step and step is discharged in by-product, in etch step, SiC
Substrate is etched, and step is discharged in by-product, due to reaction chamber pressure, top electrode radio-frequency power, total gas couette and etching
Step is identical, and plasma keeps stable build-up of luminance state, and the byproduct of reaction generated in etch step is maintained at
Inside plasma, as the effect of air-flow is discharged reaction chamber.When the time foot of etch step and by-product discharge step
Enough the by-product that an etch step generates is also considerably less in short-term, can be discharged in step and be discharged in next by-product,
To reduce the possibility in reaction chamber side wall and medium window surface deposition to greatest extent.
Various embodiments of the present invention are described above, above description is exemplary, and non-exclusive, and
It is not limited to disclosed each embodiment.Without departing from the scope and spirit of illustrated each embodiment, for this skill
Many modifications and changes are obvious for the those of ordinary skill in art field.
Claims (10)
1. a kind of lithographic method of SiC substrate, the etching carries out in reaction chamber, which is characterized in that the lithographic method
It is alternately performed etch step and by-product discharge step；
In the etch step, performed etching to the indoor SiC substrate of the reaction chamber is set to；
Step is discharged in the by-product, the indoor byproduct of reaction of the reaction chamber is discharged.
2. the lithographic method of SiC substrate according to claim 1, which is characterized in that the reaction that the etch step uses
The difference for the reaction chamber pressure P2 that chamber pressure P1 and by-product discharge step use is not more than first threshold, the etching
The difference for the top electrode radio-frequency power W2 that the top electrode radio-frequency power W1 and by-product discharge step that step uses are used is little
In the total gas couette of second threshold, the etch step total gas couette Q1 used and by-product discharge step use
The difference of Q2 is not more than third threshold value.
3. the lithographic method of SiC substrate according to claim 2, which is characterized in that the first threshold, second threshold
Value, the third threshold value are no more than 5%.
4. the lithographic method of SiC substrate according to claim 1, which is characterized in that the by-product discharge step uses
Lower electrode radio-frequency power be 0~200W.
5. the lithographic method of SiC substrate according to claim 1, which is characterized in that the by-product discharge step is held
The ratio of the duration T 1 of continuous time T2 and the etch step is 5%~15%.
6. the lithographic method of SiC substrate according to claim 5, which is characterized in that the duration of the etch step
T1 is 10~600s, and the duration T 2 of the by-product discharge step is 1~60s.
7. the lithographic method of SiC substrate according to claim 2, which is characterized in that the by-product discharge step uses
Reaction chamber pressure P2 be 2-100mT.
8. the lithographic method of SiC substrate according to claim 2, which is characterized in that the by-product discharge step uses
Top electrode radio-frequency power W2 be 300~3000W.
9. the lithographic method of SiC substrate according to claim 2, which is characterized in that the by-product discharge step uses
Total gas couette Q2 be 100~1000sccm.
10. the lithographic method of SiC substrate according to claim 1, which is characterized in that the by-product discharge step uses
Process gas include argon gas, helium, oxygen, nitrogen at least one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810857556.0A CN110534424B (en) | 2018-07-31 | 2018-07-31 | Etching method of SiC substrate |
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| CN201810857556.0A CN110534424B (en) | 2018-07-31 | 2018-07-31 | Etching method of SiC substrate |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111952168A (en) * | 2020-08-18 | 2020-11-17 | 上海华力微电子有限公司 | Etching process switching method |
| CN116092922A (en) * | 2023-02-02 | 2023-05-09 | 江苏昕感科技有限责任公司 | Silicon carbide wafer groove etching method |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200620453A (en) * | 2004-12-14 | 2006-06-16 | United Microelectronics Corp | Method of plasma etching with reducing particle production |
| CN1797716A (en) * | 2004-12-22 | 2006-07-05 | 联华电子股份有限公司 | Plasma Etching Method to Reduce Generation of Fine Dust |
| US20090117743A1 (en) * | 2007-10-11 | 2009-05-07 | Nobutake Nodera | Film formation apparatus and method for using same |
| CN101436524A (en) * | 2007-11-15 | 2009-05-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for improving chamber particle state of etching technique |
| CN102044429A (en) * | 2009-10-23 | 2011-05-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for etching silicon wafer |
| CN103400762A (en) * | 2013-08-26 | 2013-11-20 | 中微半导体设备(上海)有限公司 | Method for forming semiconductor structure |
| CN103861843A (en) * | 2012-12-12 | 2014-06-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber cleaning method and substrate etching method |
| JP2014116567A (en) * | 2012-12-12 | 2014-06-26 | Tokyo Electron Ltd | Plasma etching method and plasma etching device |
| CN103996621A (en) * | 2014-04-25 | 2014-08-20 | 京东方科技集团股份有限公司 | Dry etching method |
| CN105097423A (en) * | 2014-05-12 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Plasma reactor and method of eliminating particle pollution in plasma reaction cavity |
| CN105428222A (en) * | 2015-12-25 | 2016-03-23 | 成都嘉石科技有限公司 | Manufacturing method for substrate through hole for SiC-based GaN device |
| CN105679700A (en) * | 2014-11-21 | 2016-06-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Silicon deep hole etching method |
-
2018
- 2018-07-31 CN CN201810857556.0A patent/CN110534424B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200620453A (en) * | 2004-12-14 | 2006-06-16 | United Microelectronics Corp | Method of plasma etching with reducing particle production |
| CN1797716A (en) * | 2004-12-22 | 2006-07-05 | 联华电子股份有限公司 | Plasma Etching Method to Reduce Generation of Fine Dust |
| US20090117743A1 (en) * | 2007-10-11 | 2009-05-07 | Nobutake Nodera | Film formation apparatus and method for using same |
| CN101436524A (en) * | 2007-11-15 | 2009-05-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for improving chamber particle state of etching technique |
| CN102044429A (en) * | 2009-10-23 | 2011-05-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for etching silicon wafer |
| CN103861843A (en) * | 2012-12-12 | 2014-06-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber cleaning method and substrate etching method |
| JP2014116567A (en) * | 2012-12-12 | 2014-06-26 | Tokyo Electron Ltd | Plasma etching method and plasma etching device |
| CN103400762A (en) * | 2013-08-26 | 2013-11-20 | 中微半导体设备(上海)有限公司 | Method for forming semiconductor structure |
| CN103996621A (en) * | 2014-04-25 | 2014-08-20 | 京东方科技集团股份有限公司 | Dry etching method |
| CN105097423A (en) * | 2014-05-12 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Plasma reactor and method of eliminating particle pollution in plasma reaction cavity |
| CN105679700A (en) * | 2014-11-21 | 2016-06-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Silicon deep hole etching method |
| CN105428222A (en) * | 2015-12-25 | 2016-03-23 | 成都嘉石科技有限公司 | Manufacturing method for substrate through hole for SiC-based GaN device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111952168A (en) * | 2020-08-18 | 2020-11-17 | 上海华力微电子有限公司 | Etching process switching method |
| CN111952168B (en) * | 2020-08-18 | 2022-11-25 | 上海华力微电子有限公司 | Etching process switching method |
| CN116092922A (en) * | 2023-02-02 | 2023-05-09 | 江苏昕感科技有限责任公司 | Silicon carbide wafer groove etching method |
| CN116092922B (en) * | 2023-02-02 | 2024-01-23 | 江苏昕感科技有限责任公司 | Silicon carbide wafer groove etching method |
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