CN110527986A - A kind of PECVD thin film deposition chamber and pecvd process - Google Patents
A kind of PECVD thin film deposition chamber and pecvd process Download PDFInfo
- Publication number
- CN110527986A CN110527986A CN201910992547.7A CN201910992547A CN110527986A CN 110527986 A CN110527986 A CN 110527986A CN 201910992547 A CN201910992547 A CN 201910992547A CN 110527986 A CN110527986 A CN 110527986A
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- China
- Prior art keywords
- pecvd
- thin film
- film deposition
- fixed carrier
- lower electrode
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- Pending
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 58
- 238000000427 thin-film deposition Methods 0.000 title claims abstract description 47
- 238000000151 deposition Methods 0.000 claims abstract description 57
- 230000008021 deposition Effects 0.000 claims abstract description 53
- 239000010408 film Substances 0.000 claims abstract description 32
- 239000007789 gas Substances 0.000 claims description 17
- 239000010410 layer Substances 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000004917 carbon fiber Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 238000012864 cross contamination Methods 0.000 abstract description 5
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 3
- 125000004429 atom Chemical group 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005334 plasma enhanced chemical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention relates to a kind of PECVD thin film deposition chamber and pecvd processes.PECVD thin film deposition chamber includes: deposition chambers ontology, top electrode and lower electrode, is arranged at deposition chambers body interior, top electrode and lower electrode for applying power supply, and form plasma between the upper and lower electrodes；Vacuum chamber valve, setting is in deposition chambers body interior, for connection deposition chambers ontology and atmospheric pressure in the on state, and seals deposition chambers ontology in the off state；Fixed carrier, fixed carrier and lower electrode are connected, between top electrode and lower electrode, for carrying workpiece to be processed.The present invention passes through fixed carrier and is arranged in PECVD thin film deposition chamber, the chamber complete thin film deposition processes this during do not use carrier, pollution sources are fundamentally prevented, to avoid depositing the foreign atom cross contamination between different doped layers, it is suitble to large-scale production PECVD film deposition.
Description
Technical field
The present invention relates to microelectronics technologies, more particularly to a kind of PECVD thin film deposition chamber and pecvd process.
Background technique
PECVD (Plasma Enhanced Chemical Vapor Deposition) refers to plasma enhanced chemical
Vapour deposition process.This method has many good qualities, for example quality of forming film is good etc..PECVD is to make to contain by microwave or radio frequency etc.
There is the gas ionization of thin film composition atom, is being partially formed plasma, and plasma chemistry activity is very strong, it is easy to occur
Reaction, goes out desired film in deposition on substrate.In order to carry out chemical reaction can at a lower temperature, be utilized etc. from
The activity of daughter promotes to react, thus this CVD is known as plasma enhanced chemical vapor deposition (PECVD).
To avoid depositing the foreign atom cross contamination between different doped layers, it is suitble to the PECVD device of large-scale production
Must have the chamber of multiple autonomous closures, product is moved in each chamber by carrier, these are to the special of preparation condition
It is required that the cost of product certainly will be increased, it is unfavorable for improving the competitiveness of product, and carrier when carrier moves in each chamber
On the film doping atom of last deposition this doping film can also be formed and pollute.In order to avoid or reduce pollution production
Raw, traditional technology uses various methods below: each film uses a PECVD chamber deposition, various film depositions
The support plate used is used alone, not mixed with other kind of film PECVD deposition chamber, is both needed to adopt after product has plated film each time
Removal in product in the past the special product carrier of a plated film and one of plated film special product load is transplanted to down with automation
In tool, to avoid pollution.This method increase the complexities of PECVD device, the complexity of automation, and need to increase multiple chambers
Room is difficult to decrease in PECVD device cost；Each film uses a PECVD chamber deposition, what various film depositions were used
Support plate is shared to be used, before support plate carrying product enters other kind of film PECVD deposition chamber, first by the way of Ion Cleaning
Support plate is removed in the foreign atom of previous PECVD chamber deposition, to avoid pollution.This method in fact can not completely remove previous
The foreign atom of ECVD chamber deposition, but pollution can be reduced, due to increasing Ion Cleaning process, the cost increase of equipment is very
It is more, it is unfavorable for industrialization.
Summary of the invention
Based on disadvantages mentioned above, inventor is had found by numerous studies, and the foreign atom deposited between different doped layers intersects
It is due to that can deposit the film on carrier simultaneously in PECVD thin film deposition chamber that pollution is mostly, and carrier is to pass to lower one kind thin
When in film deposition chambers, the film doping atom of the last deposition on carrier, which can also be formed this doping film, to be polluted.
The present invention provides a kind of PECVD thin film deposition chamber and pecvd process as a result, to realize the purpose for reducing cost.
Specific technical solution is as follows:
A kind of PECVD thin film deposition chamber, comprising:
Deposition chambers ontology,
Top electrode and lower electrode are arranged at the deposition chambers body interior, the top electrode and lower electrode for applying
It powers up, and form plasma between the top electrode and lower electrode；
Vacuum chamber valve, setting is in the deposition chambers body interior, for depositing described in connection in the on state
Chamber body and atmospheric pressure, and the deposition chambers ontology is sealed in the off state；
Fixed carrier, the fixed carrier and the lower electrode are connected, and between the top electrode and lower electrode, are used for
Carry workpiece to be processed.
PECVD thin film deposition chamber of the present invention, it is preferable that the fixed carrier is that the fixed of conductive material carries
Tool；More preferably one of the fixed carrier of graphite, the fixed carrier of carbon fiber, the fixed carrier of aluminum.
PECVD thin film deposition chamber of the present invention, it is preferable that the top electrode and lower electrode are for applying RF radio frequency
Power supply or VHF very high frequency(VHF) power supply.
Fixed carrier of the present invention can be all permitted shapes for being contemplated that of this field, described fixed to carry
Tool can be the fixed carrier of single layer, two layers of fixed carrier or the fixed carrier of multilayer.(multilayer described herein refers to three layers or more
Layer)
PECVD thin film deposition chamber of the present invention, it is preferable that can also include magnetic field device；
Air source inlet, for conveying technique into the deposition chambers ontology under the vacuum chamber valve-closed state
Gas source.
It will be understood by those skilled in the art that PECVD thin film deposition chamber of the present invention can also further comprise carrying
Have one of heating device, carrier transmitting device, lower electrode lifting device etc. or at least two.
At the same time, present invention simultaneously provides a kind of techniques for producing PECVD film, it is preferable that uses any of the above-described
PECVD thin film deposition chamber described in technical solution is to complete production PECVD film.
Technique of the present invention, it is preferable that include the following steps:
1) workpiece to be processed is placed on the fixed carrier by automatic method；
2) film deposition is carried out；
3) workpiece after processing is removed into the PECVD thin film deposition chamber by automatic method.
Technique of the present invention, it is preferable that step 2) includes:
Close the vacuum chamber valve, after the deposition chambers body interior vacuum, by the air source inlet to
The deposition chambers body interior conveys technique gas source, the technique gas source is formed between the top electrode and lower electrode etc. from
Daughter, the workpiece to be processed completes film deposition with this condition.
Technique of the present invention, it is preferable that the technique gas source includes but is not limited to the gas containing silicon and/or hydrogen
Body.
As explanation and illustration, automatic method of the present invention can be this field it is permitted all be contemplated that
Method (if completed using automation equipment, illustrate such as manipulator, conveyer belt, roller-way), pass through automation transfer
Product leaves to fixed carrier and by automation from fixed carrier transfer product, all these in protection scope of the present invention
It is interior.
It is arranged in PECVD thin film deposition chamber as described above, the present invention passes through fixed carrier, and will be to using automation
Workpieces processing is transplanted on PECVD thin film deposition chamber, removes after the chamber completes thin film deposition processes again by automation
PECVD thin film deposition chamber, this does not use carrier in the process, has fundamentally prevented pollution sources, to avoid deposition different
Foreign atom cross contamination between doped layer, this method are suitble to that PECVD film deposition is mass produced.
Certainly, implement any of the products of the present invention or method it is not absolutely required at the same reach all the above excellent
Point.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is a kind of structural schematic diagram of PECVD thin film deposition chamber provided by the present invention；
Fig. 2 is a kind of perspective view of PECVD thin film deposition chamber provided by the present invention；
Fig. 3 is a kind of use state diagram of PECVD thin film deposition chamber provided by the present invention；
Appended drawing reference:
A: workpiece to be processed；
101: deposition chambers ontology；
102: top electrode；
103: lower electrode；
104: vacuum chamber valve；
105: fixed carrier.
Specific embodiment
The technical scheme in the embodiments of the invention will be clearly and completely described below, it is clear that described implementation
Example is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
Technical staff's every other embodiment obtained without making creative work belongs to the model that the present invention protects
It encloses.
Embodiment 1
Attached drawing 1-3 is please referred to, the present embodiment provides a kind of PECVD thin film deposition chambers, comprising:
Deposition chambers ontology 101,
Top electrode 102 and lower electrode 103, are arranged inside the deposition chambers ontology 101,102 He of top electrode
Lower electrode 103 forms plasma between the top electrode 102 and lower electrode 103 for applying power supply；
Vacuum chamber valve 104 is arranged inside the deposition chambers ontology 101, for connection institute in the on state
Deposition chambers ontology 101 and atmospheric pressure are stated, and seals the deposition chambers ontology 101 in the off state；
Fixed carrier 105, the fixed carrier 105 are connected with the lower electrode 103, are located at the top electrode 102 under
Between electrode 103, for carrying workpiece to be processed.
It, can as a result, by the way that the fixation carrier 105 for carrying workpieces processing is fixed in PECVD thin film deposition chamber
Workpiece to be processed A is transplanted on PECVD thin film deposition chamber by automation equipment, after the chamber completes thin film deposition processes
PECVD thin film deposition chamber is removed again by automation, this does not use other carriers in the process, has fundamentally prevented dirt
Dye source, to avoid cross contamination.
PECVD thin film deposition chamber described in the present embodiment, it is preferable that the fixed carrier 105 is the fixed carrier of graphite
105, one of the fixed carrier 105 of carbon fiber, the fixed carrier 105 of aluminum or carrier of other conductive materials processing.
The fixed carrier is sturdy and durable as a result, reliable and stable.
Fixed carrier 105 of the present invention can be all permitted shapes for being contemplated that of this field, described solid
Determining carrier can be the fixed carrier of single layer, two layers of fixed carrier or the fixed carrier of multilayer.(multilayer described herein refer to three layers or
More layers)
PECVD thin film deposition chamber described in the present embodiment, it is preferable that the top electrode 102 and lower electrode 103 are for applying
Add RF radio-frequency power supply or VHF very high frequency(VHF) power supply.
PECVD thin film deposition chamber described in the present embodiment, it is preferable that may also include magnetic field device；
Air source inlet, for defeated into the deposition chambers ontology 101 under 104 closed state of vacuum chamber valve
Send technique gas source.
It will be understood by those skilled in the art that PECVD thin film deposition chamber of the present invention can also further comprise carrying
Have one of heating device, carrier transmitting device, lower electrode lifting device etc. or at least two.Also, above-mentioned carrier adds
One of thermal, carrier transmitting device, lower electrode lifting device etc. at least two can be according to the acceptable sides in this field
Formula is disposed or mounted in the PECVD thin film deposition chamber.
Embodiment 2
With reference to attached drawing 1-3, given birth to the present embodiment provides a kind of using PECVD thin film deposition chamber described in embodiment 1
The technique for producing PECVD film, includes the following steps:
1) workpiece to be processed is placed on the fixed carrier 105 by automation equipment；
2) film deposition is carried out；
3) workpiece after processing is removed into the PECVD thin film deposition chamber by automation equipment.
Technique described in the present embodiment, it is preferable that step 2) includes:
The vacuum chamber valve 104 is closed, after 101 inner vacuum of deposition chambers ontology, passes through the gas source
Entrance is to the 101 delivered inside technique gas source of deposition chambers ontology, and the technique gas source is in the top electrode 102 and lower electrode
Plasma is formed between 103, the workpiece to be processed A completes film deposition with this condition.
Technique described in the present embodiment, it is preferable that it includes the gas containing silicon and/or hydrogen that the technique gas source, which is selected from,.
Before this invention, traditional suitable large-scale production PECVD film deposits not solid using load plate in all kinds of methods
It is fixed that product disengaging PECVD film deposition is transplanted without using product carrier into PECVD thin film deposition chamber, only through automation
Chamber.The present invention passes through fixed carrier and is arranged in PECVD thin film deposition chamber, and is transferred workpiece to be processed using automation
To PECVD thin film deposition chamber, PECVD film deposition is removed again by automation after the chamber completes thin film deposition processes
Chamber, this does not use carrier in the process, has fundamentally prevented pollution sources, to be avoided depositing mixing between different doped layers
Hetero atom cross contamination, this method are suitble to that PECVD film deposition is mass produced.
It should be noted that, in this document, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including element.
Each embodiment in this specification is all made of relevant mode and describes, same and similar portion between each embodiment
Dividing may refer to each other, and each embodiment focuses on the differences from other embodiments.Especially for system reality
For applying example, since it is substantially similar to the method embodiment, so being described relatively simple, related place is referring to embodiment of the method
Part explanation.
The above is merely preferred embodiments of the present invention, it is not intended to limit the scope of the present invention.It is all in this hair
Any modification, equivalent replacement, improvement and so within bright spirit and principle, are included within the scope of protection of the present invention.
Claims (10)
1. a kind of PECVD thin film deposition chamber characterized by comprising
Deposition chambers ontology,
Top electrode and lower electrode are arranged at the deposition chambers body interior, the top electrode and lower electrode for applying electricity
Source, and plasma is formed between the top electrode and lower electrode；
Vacuum chamber valve, setting is in the deposition chambers body interior, for deposition chambers described in connection in the on state
Ontology and atmospheric pressure, and the deposition chambers ontology is sealed in the off state；
Fixed carrier, the fixed carrier and the lower electrode are connected, between the top electrode and lower electrode, for carrying
Workpiece to be processed.
2. PECVD thin film deposition chamber according to claim 1, which is characterized in that the fixed carrier is conductive material
Fixation carrier.
3. PECVD thin film deposition chamber according to claim 2, which is characterized in that the fixed carrier is fixed for graphite
One of the fixed carrier of carrier, carbon fiber, the fixed carrier of aluminum.
4. PECVD thin film deposition chamber according to claim 1, which is characterized in that the top electrode and lower electrode are used for
Apply RF radio-frequency power supply or VHF very high frequency(VHF) power supply.
5. PECVD thin film deposition chamber according to claim 1-3, which is characterized in that further include magnetic field device
And air source inlet；
The air source inlet, for conveying technique into the deposition chambers ontology under the vacuum chamber valve-closed state
Gas source.
6. PECVD thin film deposition chamber according to claim 1-3, which is characterized in that the fixed carrier is
Single layer fixes one of fixed carrier of carrier, two layers of fixed carrier or multilayer.
7. a kind of pecvd process, which is characterized in that use PECVD thin film deposition chamber described in any one of claims 1-6.
8. technique according to claim 7, which comprises the steps of:
1) workpiece to be processed is placed on the fixed carrier by automation equipment；
2) film deposition is carried out；
3) workpiece after processing is removed into the PECVD thin film deposition chamber by automation equipment.
9. technique according to claim 8, which is characterized in that step 2) includes:
The vacuum chamber valve is closed, after the deposition chambers body interior vacuum, by the air source inlet to described
Deposition chambers body interior conveys technique gas source, and the technique gas source forms plasma between the top electrode and lower electrode
Body, the workpiece to be processed completes film deposition with this condition.
10. technique according to claim 9, which is characterized in that the technique gas source includes the gas containing silicon and/or hydrogen
Body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910992547.7A CN110527986A (en) | 2019-10-18 | 2019-10-18 | A kind of PECVD thin film deposition chamber and pecvd process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910992547.7A CN110527986A (en) | 2019-10-18 | 2019-10-18 | A kind of PECVD thin film deposition chamber and pecvd process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110527986A true CN110527986A (en) | 2019-12-03 |
Family
ID=68672065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910992547.7A Pending CN110527986A (en) | 2019-10-18 | 2019-10-18 | A kind of PECVD thin film deposition chamber and pecvd process |
Country Status (1)
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1783431A (en) * | 2004-12-03 | 2006-06-07 | 东京毅力科创株式会社 | Plasma processing apparatus |
| CN102534568A (en) * | 2010-12-30 | 2012-07-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma-enhanced chemical vapor deposition equipment |
| US20120208360A1 (en) * | 2011-02-11 | 2012-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming semiconductor film and method for manufacturing semiconductor device |
| KR101596329B1 (en) * | 2014-08-18 | 2016-02-23 | 연세대학교 산학협력단 | Apparatus and method for performing plasma enhanced atomic layer deposition employing very high frequency |
| CN205556778U (en) * | 2016-04-29 | 2016-09-07 | 合肥鑫晟光电科技有限公司 | Plasma enhanced chemical vapor deposition device |
| CN106245005A (en) * | 2016-09-20 | 2016-12-21 | 武汉华星光电技术有限公司 | Plasma enhanced chemical vapor deposition unit |
| CN110419091A (en) * | 2017-03-24 | 2019-11-05 | 应用材料公司 | The deposition of diamond-like-carbon or processing and plasma reactor in plasma reactor |
| CN210711738U (en) * | 2019-10-18 | 2020-06-09 | 南京华伯新材料有限公司 | PECVD film deposition chamber |
-
2019
- 2019-10-18 CN CN201910992547.7A patent/CN110527986A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1783431A (en) * | 2004-12-03 | 2006-06-07 | 东京毅力科创株式会社 | Plasma processing apparatus |
| CN102534568A (en) * | 2010-12-30 | 2012-07-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma-enhanced chemical vapor deposition equipment |
| US20120208360A1 (en) * | 2011-02-11 | 2012-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming semiconductor film and method for manufacturing semiconductor device |
| KR101596329B1 (en) * | 2014-08-18 | 2016-02-23 | 연세대학교 산학협력단 | Apparatus and method for performing plasma enhanced atomic layer deposition employing very high frequency |
| CN205556778U (en) * | 2016-04-29 | 2016-09-07 | 合肥鑫晟光电科技有限公司 | Plasma enhanced chemical vapor deposition device |
| CN106245005A (en) * | 2016-09-20 | 2016-12-21 | 武汉华星光电技术有限公司 | Plasma enhanced chemical vapor deposition unit |
| CN110419091A (en) * | 2017-03-24 | 2019-11-05 | 应用材料公司 | The deposition of diamond-like-carbon or processing and plasma reactor in plasma reactor |
| CN210711738U (en) * | 2019-10-18 | 2020-06-09 | 南京华伯新材料有限公司 | PECVD film deposition chamber |
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