CN110524408A - A kind of sapphire wafer grinding method - Google Patents
A kind of sapphire wafer grinding method Download PDFInfo
- Publication number
- CN110524408A CN110524408A CN201910861241.8A CN201910861241A CN110524408A CN 110524408 A CN110524408 A CN 110524408A CN 201910861241 A CN201910861241 A CN 201910861241A CN 110524408 A CN110524408 A CN 110524408A
- Authority
- CN
- China
- Prior art keywords
- sapphire wafer
- grinding
- parts
- lapping liquid
- grinding method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention discloses a kind of sapphire wafer grinding method.Method includes the following steps: being grouped to the sapphire wafer that cutting obtains by thickness, thickness difference is in 0.015-0.02mm；Grinding 5-12 minutes is carried out to sapphire wafer with lapping liquid, the average grain diameter of lapping liquid is 20-30 μm, the lapping liquid is mixed by modified abrasive, Sodium Polyacrylate, sodium citrate and deionized water, and the weight percent of modified abrasive is the 0.02-0.08%, polish pressure 32-35kPa of lapping liquid；After sapphire wafer is rinsed with flowing water after physical grinding, then polishing fluid being infected with polishing pad and is polished, polishing time is 5-8 minutes, and the surface roughness Ra of gained sapphire wafer is 0.2-0.4nm.The grinding method set chemical grinding and physical grinding are integrated, and reduce the requirement in process of lapping to equipment, are reduced the use of abrasive material, are had a good application prospect.
Description
Technical field
The present invention relates to the grinding and polishing technical fields of sapphire wafer, and in particular to a kind of sapphire wafer grinding side
Method.
Background technique
(main component is α-Al to monocrystalline sapphire2O3), because its excellent mechanical performance, dielectric properties, chemical stability,
The features such as heat conductivity and high surface smoothness and be widely used in the technical fields such as military affairs, space flight, information, optics, superconduction,
As the optimum substrate and substrate material for preparing high-temperature superconducting thin film, infrared optical material, microelectronic component etc..
Since the polishing efficiency of sapphire single-crystal plane is very low, cost is high, and low polishing efficiency is to restrict
The basic reason of sapphire panel development.Developing a kind of efficient Sapphire Polishing Technology has high economic value.
Multistep grinding is ground to sapphire wafer in the prior art, the thickness to sapphire wafer is also needed before grinding
It is screened.Therefore time-consuming for sapphire wafer polishing process, and grinding is at high cost, and the effect after grinding, it is difficult to control.It is badly in need of
Research and develop that a kind of lapping mode is simple, and the controllable lapping mode of effect is applied in actual production.
Summary of the invention
In view of the deficiencies of the prior art, the purpose of the present invention is to provide a kind of sapphire wafer grinding method, the grindings
Method set chemical grinding and physical grinding are integrated, and are handled sapphire wafer, are reduced in process of lapping to equipment
Requirement, reduce the use of abrasive material, have a good application prospect.
A kind of sapphire wafer grinding method, comprising the following steps:
Step 1, to cutting obtain sapphire wafer by thickness grouping so that in same group multi-disc sapphire wafer thickness difference
In 0.015-0.02mm；
Step 2, sapphire wafer is ground with lapping liquid, milling time 5-12 minutes, the average grain diameter of lapping liquid is 20-
30 μm, the lapping liquid is mixed by modified abrasive, Sodium Polyacrylate, sodium citrate and deionized water, and modified abrasive
Weight percent is the 0.02-0.08%, polish pressure 32-35kPa of lapping liquid；
Step 3, after sapphire wafer is rinsed with flowing water after physical grinding, then polishing fluid is infected with polishing pad and is polished,
Polishing time is 5-8 minutes, and the surface roughness Ra of gained sapphire wafer is 0.2-0.4nm.
It is that modified abrasive described in step 2 is Alpha-alumina, methylhydroxypropylcellulose sodium and nanometer stone as improved
Black alkene mixes, molar ratio 25-30:1:8-15.
It is that the partial size of the nano-graphene is 2-3 μm as improved.
It is that the flow of polishing fluid is 8-10ml/min in step 3 as improved.
It is that polishing fluid includes following component in parts by weight in step 3: 5-10 parts of gallium oxide, benzo as improved
2-4 parts of imidazoles, 10-18 parts of 2- methylol alcohol, 1-3 parts of sodium citrate, 1-3 parts of isocyanatosilanes class compound, deionized water 20-
30 parts.
The utility model has the advantages that
Compared with prior art, the present invention provides a kind of sapphire wafer grinding method, this method utilizes physical grinding and change
It learns grinding to be used in conjunction with, after the improvement processing to abrasive material, improves the anti-pressure and abrasion-proof performance of abrasive material, it can simultaneous grinding height
The big sapphire wafer of difference, and milling time is shortened, reduce substandard products generation.
Specific embodiment
The invention will be further described combined with specific embodiments below.
Embodiment 1
A kind of sapphire wafer grinding method, comprising the following steps:
Step 1, to cutting obtain sapphire wafer by thickness grouping so that in same group multi-disc sapphire wafer thickness difference
In 0.015mm；
Step 2, sapphire wafer to be ground with lapping liquid, milling time 5 minutes, the average grain diameter of lapping liquid is 20 μm,
The lapping liquid is mixed by modified abrasive, Sodium Polyacrylate, sodium citrate and deionized water, and the weight hundred of modified abrasive
Divide than 0.02% for lapping liquid, polish pressure 32kPa；The modified abrasive is Alpha-alumina, methylhydroxypropylcellulose
Sodium and partial size are that 2 μm of nano-graphenes mix, molar ratio 25:1:8；
Step 3, after sapphire wafer is rinsed with flowing water after physical grinding, then polishing fluid is infected with polishing pad and is polished,
Polishing time is 5 minutes, and the surface roughness Ra of gained sapphire wafer is 0.4nm.The flow of polishing fluid is 8ml/min, is thrown
Light liquid includes following component in parts by weight: 5 parts of gallium oxide, 2 parts of benzimidazole, 10 parts of 2- methylol alcohol, sodium citrate 1
Part, 1 part of isocyanatosilanes class compound, 20 parts of deionized water.
Embodiment 2
A kind of sapphire wafer grinding method, comprising the following steps:
Step 1, to cutting obtain sapphire wafer by thickness grouping so that in same group multi-disc sapphire wafer thickness difference
In 0.015-0.02mm；
Step 2, sapphire wafer to be ground with lapping liquid, milling time 8 minutes, the average grain diameter of lapping liquid is 25 μm,
The lapping liquid is mixed by modified abrasive, Sodium Polyacrylate, sodium citrate and deionized water, and the weight hundred of modified abrasive
Divide than 0.04% for lapping liquid, polish pressure 34kPa；The modified abrasive is Alpha-alumina, methylhydroxypropylcellulose
Sodium and partial size are that 3 μm of nano-graphenes mix, molar ratio 27:1:12；
Step 3, after sapphire wafer is rinsed with flowing water after physical grinding, then polishing fluid is infected with polishing pad and is polished,
Polishing time is 6 minutes, and the surface roughness Ra of gained sapphire wafer is 0.3nm；The flow of polishing fluid is 9ml/min, is thrown
Light liquid includes following component in parts by weight: 8 parts of gallium oxide, 3 parts of benzimidazole, 14 parts of 2- methylol alcohol, sodium citrate 2
Part, 2 parts of isocyanatosilanes class compound, 28 parts of deionized water.
Embodiment 3
A kind of sapphire wafer grinding method, comprising the following steps:
Step 1, to cutting obtain sapphire wafer by thickness grouping so that in same group multi-disc sapphire wafer thickness difference
In 0.02mm；
Step 2, sapphire wafer is ground with lapping liquid, milling time 5-12 minutes, the average grain diameter of lapping liquid is 30 μ
M, the lapping liquid are mixed by modified abrasive, Sodium Polyacrylate, sodium citrate and deionized water, and the weight of modified abrasive
Percentage is the 0.08% of lapping liquid, polish pressure 35kPa；The modified abrasive is Alpha-alumina, methylhydroxypropyl
Plain sodium and partial size are that 3 μm of nano-graphenes mix, molar ratio 30:1:15；
Step 3, after sapphire wafer is rinsed with flowing water after physical grinding, then polishing fluid is infected with polishing pad and is polished,
Polishing time is 8 minutes, and the surface roughness Ra of gained sapphire wafer is 0.2nm；The flow of polishing fluid is 10ml/min；It throws
Light liquid includes following component in parts by weight: 10 parts of gallium oxide, 4 parts of benzimidazole, 18 parts of 2- methylol alcohol, sodium citrate 3
Part, 3 parts of isocyanatosilanes class compound, 30 parts of deionized water.
Comparative example 1
In addition to modified abrasive is changed to common Alpha-alumina, remaining is the same as embodiment 2, the rough surface of gained sapphire wafer
Degree Ra is 1.6nm.By experiment it is found that Alpha-alumina of the invention under high pressure, ruptures, grinding failure, by step 2
Sapphire wafer surface roughness ratio embodiment 2 after grinding it is much higher, then lapping liquid is taken to observe, abrasive size is 8 μm,
Therefore, grinding effectiveness substantially reduces.
Claims (5)
1. a kind of sapphire wafer grinding method, which comprises the following steps: step 1, the sapphire that cutting is obtained
Chip is grouped by thickness, so that the thickness difference of multi-disc sapphire wafer is in 0.015-0.02mm in same group；Step 2, with grinding
Liquid grinds sapphire wafer, and milling time 5-12 minutes, the average grain diameter of lapping liquid was 20-30 μm, the lapping liquid
It is mixed by modified abrasive, Sodium Polyacrylate, sodium citrate and deionized water, and the weight percent of modified abrasive is grinding
The 0.02-0.08% of liquid, polish pressure 32-35kPa；Step 3, after sapphire wafer is rinsed with flowing water after physical grinding,
It is polished again with polishing pad contamination polishing fluid, polishing time is 5-8 minutes, and the surface roughness Ra of gained sapphire wafer is
0.2-0.4nm。
2. a kind of sapphire wafer grinding method according to claim 1, which is characterized in that improved grinder described in step 2
Material is that Alpha-alumina, methylhydroxypropylcellulose sodium and nano-graphene mix, molar ratio 25-30:1:8-15.
3. a kind of sapphire wafer grinding method according to claim 2, which is characterized in that the grain of the nano-graphene
Diameter is 2-3 μm.
4. a kind of sapphire wafer grinding method according to claim 1, which is characterized in that the stream of polishing fluid in step 3
Amount is 8-10ml/min.
5. a kind of sapphire wafer grinding method according to claim 1, which is characterized in that polishing fluid includes in step 3
Component in parts by weight below: 5-10 parts of gallium oxide, 2-4 parts of benzimidazole, 10-18 parts of 2- methylol alcohol, sodium citrate 1-3
Part, 1-3 parts of isocyanatosilanes class compound, 20-30 parts of deionized water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910861241.8A CN110524408A (en) | 2019-09-12 | 2019-09-12 | A kind of sapphire wafer grinding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910861241.8A CN110524408A (en) | 2019-09-12 | 2019-09-12 | A kind of sapphire wafer grinding method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110524408A true CN110524408A (en) | 2019-12-03 |
Family
ID=68668220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910861241.8A Pending CN110524408A (en) | 2019-09-12 | 2019-09-12 | A kind of sapphire wafer grinding method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110524408A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113249035A (en) * | 2020-02-10 | 2021-08-13 | 中国科学院长春光学精密机械与物理研究所 | Chemical mechanical polishing liquid and application thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001205555A (en) * | 1999-11-16 | 2001-07-31 | Denso Corp | Mechanochemical polishing method and device |
| EP1478708A1 (en) * | 2002-02-26 | 2004-11-24 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| CN104513628A (en) * | 2014-12-22 | 2015-04-15 | 清华大学 | Polishing liquid for chemical mechanical planarization of sapphire |
| CN104559796A (en) * | 2013-10-14 | 2015-04-29 | 天津西美半导体材料有限公司 | Preparation method of surface modification aluminium oxide polishing solution applied to ultra-hard surfaces |
| CN108214260A (en) * | 2016-12-22 | 2018-06-29 | 蓝思科技（长沙）有限公司 | A kind of polishing process of ultra-thin sapphire wafer |
| CN108359384A (en) * | 2018-03-21 | 2018-08-03 | 合肥师范学院 | A kind of sapphire polishing liquid and preparation method thereof |
-
2019
- 2019-09-12 CN CN201910861241.8A patent/CN110524408A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001205555A (en) * | 1999-11-16 | 2001-07-31 | Denso Corp | Mechanochemical polishing method and device |
| EP1478708A1 (en) * | 2002-02-26 | 2004-11-24 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| CN1646649A (en) * | 2002-02-26 | 2005-07-27 | 应用材料股份有限公司 | Method and composition for polishing a substrate |
| CN104559796A (en) * | 2013-10-14 | 2015-04-29 | 天津西美半导体材料有限公司 | Preparation method of surface modification aluminium oxide polishing solution applied to ultra-hard surfaces |
| CN104513628A (en) * | 2014-12-22 | 2015-04-15 | 清华大学 | Polishing liquid for chemical mechanical planarization of sapphire |
| CN108214260A (en) * | 2016-12-22 | 2018-06-29 | 蓝思科技（长沙）有限公司 | A kind of polishing process of ultra-thin sapphire wafer |
| CN108359384A (en) * | 2018-03-21 | 2018-08-03 | 合肥师范学院 | A kind of sapphire polishing liquid and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113249035A (en) * | 2020-02-10 | 2021-08-13 | 中国科学院长春光学精密机械与物理研究所 | Chemical mechanical polishing liquid and application thereof |
| CN113249035B (en) * | 2020-02-10 | 2024-05-24 | 长春长光圆辰微电子技术有限公司 | Chemical mechanical polishing solution and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111421391A (en) | Double-sided chemical mechanical polishing method for single crystal diamond wafer | |
| CN108239484B (en) | Alumina polishing solution for sapphire polishing and preparation method thereof | |
| TWI226391B (en) | High surface quality GaN wafer and method of fabricating same | |
| CN109545680B (en) | Rapid preparation method of high-flatness and low-damage monocrystalline silicon carbide substrate | |
| CN100556619C (en) | Method for controlling surface roughness of sapphire substrate material | |
| JP7298915B2 (en) | Method for manufacturing single-crystal silicon carbide substrate | |
| US10066128B2 (en) | Method for preparing an aluminum oxide polishing solution | |
| CN109676437B (en) | Silicon carbide wafer and method for producing same | |
| CN105038607A (en) | Effective sapphire fine grinding method and fine grinding solution | |
| CN108034360A (en) | A kind of CMP planarization liquid and its application in GaAs wafer polishings | |
| CN102059640B (en) | Method for polishing semiconductor wafer | |
| CN103484024B (en) | Chemico-mechanical polishing liquid for silicon dioxide dielectric materials and preparing method thereof | |
| CN111073520A (en) | Polishing powder for polishing silicon carbide wafer, preparation method thereof and polishing solution | |
| WO2007041199A2 (en) | Polishing slurries and methods for utilizing same | |
| CN108527013A (en) | A kind of grinding and polishing manufacture craft of sapphire optical eyeglass | |
| CN106271900A (en) | A kind of sapphire glossing | |
| CN104312441A (en) | Silicon-cerium polishing liquid and preparation method thereof | |
| CN113789126A (en) | Silicon wafer chemical mechanical polishing solution and application thereof | |
| CN110788739A (en) | Polishing method of indium antimonide single crystal wafer | |
| CN108559407A (en) | A kind of optics sapphire lapping liquid | |
| CN110524408A (en) | A kind of sapphire wafer grinding method | |
| TWI488952B (en) | Cmp polishing liquid and polishing method using the same and fabricating method of semiconductor substrate | |
| CN108017998A (en) | A kind of preparation method of CMP planarization liquid | |
| CN102399496A (en) | Abrasive composition for rough polishing of wafers | |
| CN102220087A (en) | Porous nano-alumina polishing solution for polishing computer hard disk substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20191203 |
|
| RJ01 | Rejection of invention patent application after publication |