CN110514446A - A kind of Uniform Electromagnetic Field device for plasma speed screening instrument - Google Patents
A kind of Uniform Electromagnetic Field device for plasma speed screening instrument Download PDFInfo
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- CN110514446A CN110514446A CN201910692358.8A CN201910692358A CN110514446A CN 110514446 A CN110514446 A CN 110514446A CN 201910692358 A CN201910692358 A CN 201910692358A CN 110514446 A CN110514446 A CN 110514446A
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- electrode plate
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- ceramic wafer
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M15/00—Testing of engines
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M15/00—Testing of engines
- G01M15/02—Details or accessories of testing apparatus
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
Abstract
This application discloses a kind of Uniform Electromagnetic Field devices for plasma speed screening instrument, including the first ceramic wafer, the second ceramic wafer, the first pole plate, the second pole plate, the first pole plate gasket, the second pole plate gasket, first electrode plate, second electrode plate, first electrode plate collets, second electrode plate collets, first electrode plate adapter, second electrode plate adapter, shell.According to the technical solution of the present invention, it can guarantee reasonable relative positional accuracy, meet installation accuracy and machining property.Using a kind of special concave circular electric field structure design, to provide even strong electric and magnetic fields inside plasma speed screening instrument, it realizes under the long and narrow electric field structure of finite width, central area field distribution is relatively uniform, and the effect gradually decreased from center to the electric field strength in electrode plate direction, while can be implemented as plasma speed screening plant and uniform electromagnetic field channel is provided.
Description
Technical field
The invention belongs to electric propulsion plasma measurement fields more particularly to a kind of use contact measurement method to ion
Thruster line plasma carries out the ion velocity selection instrument of deflection and speed screening measurement.
Background technique
Electric propulsion is that one kind directly heats propellant using electric energy or ionizes acceleration propellant using electromagnetic action to obtain
The advanced propulsion mode of thrust power, specific impulse, thrust and efficiency with higher, orbits controlling, deep space in Large Spacecraft
Have broad application prospects in the space tasks such as detection and interplanetary flight.
Ion thruster is one kind of electrostatic electric thruster, has been widely used in satellite and deep space probe at present
Basic propulsion system.
The measurement of relevant parameter is carried out for improving the design of optimization engine, mentioning to the line plasma of ion thruster
High engine performance is of great significance.Ion velocity selection instrument be measure energy of plasma distribution basic test means it
One, belong to contact measurement method, possesses the advantages such as measurement accuracy is high, and screening ion energy is strong, however for instrument internal
The uniformity of electromagnetic field has higher requirement, and there is presently no the speed selections of the line area design specifically for ion thruster
Instrument, main cause are exactly that there are technical bottlenecks for the design of Uniform Electromagnetic Field structure.
Summary of the invention
In order to solve deficiency existing for above-mentioned prior art, the present invention proposes a kind of device that can generate Uniform Electromagnetic Field,
For plasma speed screening instrument, the ion energy distribution of ion thruster plume is measured.To realize the above-mentioned technical purpose, originally
The specific technical solution of invention is as follows:
A kind of Uniform Electromagnetic Field device for plasma speed screening instrument, which is characterized in that including the first ceramic wafer,
Second ceramic wafer, the first pole plate, the second pole plate, the first pole plate gasket, the second pole plate gasket, first electrode plate,
Two electrode plates, first electrode plate collets, second electrode plate collets, first electrode plate adapter, second electrode plate adapter,
Shell, wherein
First ceramic wafer and second ceramic wafer are engaged setting, and inside forms insulation cavity, in first pottery
First pole plate, described the are from top to bottom set gradually in the insulation cavity formed inside porcelain plate and second ceramic wafer
One pole plate gasket, the second pole plate gasket, second pole plate, in the first pole plate gasket and described second
The first electrode plate and the second electrode plate are set gradually between pole plate gasket from left to right;
In the shell exterior, the first electrode plate adapter connects the first electrode plate collets, and described first
Pole plate insulating block connects the first electrode plate, and the second electrode plate adapter connects the second electrode plate collets,
The second electrode plate collets connect the second electrode plate;
The shell is assemblied in outside first ceramic wafer and second ceramic wafer.
Further, first electrode plate one end opposite with the second electrode plate is arc, radius of curvature is
2mm-3mm, second electrode plate one end opposite with the first electrode plate are arc, radius of curvature 2mm-3mm.
Further, first pole plate and second pole plate are apart from first ceramic wafer and second pottery
The insulation cavity center formed inside porcelain plate is 8 ± 0.01mm, the arc section edge of the first electrode plate and described second
The insulation cavity center formed inside first ceramic wafer described in the arc section Edge Distance of electrode plate and second ceramic wafer is equal
For 6 ± 0.01mm, the field region that first pole plate and second pole plate generate covers the first electrode plate
The region of electric field is generated with the second electrode plate.
Further, the magnetic field strength between first pole plate and second pole plate maintain 0.26 ±
0.01T is evenly distributed;" X " type, electric field is integrally presented in field distribution between the first electrode plate and the second electrode plate
Intensity maintains 2.64 ± 0.01V/m, is evenly distributed.
Further, first ceramic wafer and second ceramic wafer are boron nitride material.
Further, first pole plate and second pole plate are neodymium iron boron material.
Further, the first electrode plate and the second electrode plate are austenite stainless steel material.
The beneficial effects of the present invention are:
1. using one end for the electrode plate structure of circular cross-section, uniform electric field can be generated, guarantees ion in electromagnetic field
Screening precision is higher, and collimation is good.
2. avoiding influence of the magnet to field distribution itself using structure of the magnetic field outside, including electric field.
3. using a kind of special concave electric field structure design, in the long and narrow electric field structure of finite width, center
Domain electric-field intensity distribution is relatively uniform, and gradually uniformly reduces from center to the electric field strength of electrode plate surrounding, is not mutated.
4. both can guarantee reasonable relative positional accuracy, moreover it is possible to meet by a kind of non-metal shell structure of buckle-type
Relatively easy installation accuracy and machining property.
Detailed description of the invention
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, the features and advantages of the present invention will be more clearly understood by referring to the accompanying drawings, attached
Figure is schematically to but should not be understood as carrying out any restrictions to the present invention, for those of ordinary skill in the art, not
Under the premise of making the creative labor, other drawings may be obtained according to these drawings without any creative labor.Wherein:
Fig. 1 is a kind of Uniform Electromagnetic Field structure drawing of device for plasma speed screening instrument;
Fig. 2 is a kind of Uniform Electromagnetic Field structure drawing of device for plasma speed screening instrument;
Fig. 3 is a kind of Distribution of Magnetic Field figure of Uniform Electromagnetic Field device for plasma speed screening instrument;
Fig. 4 is a kind of distribution map of the electric field of Uniform Electromagnetic Field device for plasma speed screening instrument;
Fig. 5 is a kind of field distribution main view sectional view of Uniform Electromagnetic Field device for plasma speed screening instrument.
Drawing reference numeral explanation:
The first ceramic wafer of 1-;The second ceramic wafer of 2-;The first pole plate of 3-;The second pole plate of 4-;5- the first pole plate gasket;
6- the second pole plate gasket;7- first electrode plate;8- second electrode plate;9- first electrode plate collets;10- second electrode plate is exhausted
Edge block;11- first electrode plate adapter;12- second electrode plate adapter;13- shell.
Specific embodiment
To better understand the objects, features and advantages of the present invention, with reference to the accompanying drawing and specific real
Applying mode, the present invention is further described in detail.It should be noted that in the absence of conflict, the implementation of the application
Feature in example and embodiment can be combined with each other.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, still, the present invention may be used also
To be implemented using other than the one described here other modes, therefore, protection scope of the present invention is not by described below
Specific embodiment limitation.
As depicted in figs. 1 and 2, a kind of Uniform Electromagnetic Field device for plasma speed screening instrument, which is characterized in that
Including the first ceramic wafer 1, the second ceramic wafer 2, the first pole plate 3, the second pole plate 4, the first pole plate gasket 5, the second magnetic pole
Plate gasket 6, first electrode plate 7, second electrode plate 8, first electrode plate collets 9, second electrode plate collets 10, first electrode
Plate adapter 11, second electrode plate adapter 12, shell 13, wherein the first ceramic wafer 1 and the second ceramic wafer 2 are engaged setting, interior
Portion forms insulation cavity, from top to bottom sets gradually the first pole plate 3, the first pole plate gasket 5, the second magnetic in insulation cavity
Pole plate gasket 6, the second pole plate 4 are set gradually from left to right between the first pole plate gasket 5 and the second pole plate gasket 6
First electrode plate 7 and second electrode plate 8;Outside shell 13, first electrode plate adapter 11 connects first electrode plate collets
9, first electrode plate collets 9 connect first electrode plate 7, and second electrode plate adapter 12 connects second electrode plate collets 10,
Second electrode plate collets 10 connect second electrode plate 8;Shell 13 is assemblied in outside the first ceramic wafer 1 and the second ceramic wafer 2.
First electrode plate 7 and second electrode plate 8 pass through first electrode plate adapter 11 and second electrode plate adapter respectively
12 reach outside device, and external power supply circuit connection, so that external power supply system can be transferred by first electrode plate
First 11 and the first electrode plate 7 internally of second electrode plate adapter 12 and second electrode plate 8 bias voltage of 0-80V is provided,
Final first electrode plate 7 and second electrode plate 8 are in the case where obtaining bias voltage, in the first ceramic wafer 1 and the second ceramic wafer 2
Uniform magnetic field is formed in the insulation cavity that inside is formed.
First electrode plate collets 9 and second electrode plate collets 10 ensure first electrode plate 7, second electrode plate 8,
One electrode plate adapter 11 and second electrode plate adapter 12 and whole device insulate, and shell 13 is assemblied in 1 He of the first ceramic wafer
All elements inside the external fixation device of second ceramic wafer 2.
In some embodiments, the one end opposite with second electrode plate 8 of first electrode plate 7 is arc, radius of curvature is
2mm-3mm, the one end opposite with first electrode plate 7 of second electrode plate 8 are arc, radius of curvature 2mm-3mm, first electrode plate
7 and second electrode plate 8 radius of curvature have followed electrostatic screen debye dimension calculation formula and Larmor's radius of gyration calculate
Formula:Wherein, λDIt is Debye length, ε0It is permittivity of vacuum, k is Boltzmann constant, Te
It is electron temperature, e is elementary charge amount, NeIt is electron density, R is ion gyro-radius, miIt is mass of ion, vbIt is that ion is tangential
Speed, qiIt is ionic charge amount, B is magnetic field strength.The structure can generate uniform electric field, guarantee that ion screens in electromagnetic field
Precision is higher, and collimation is good, can reach electric field strength error less than 0.1V/m, the uniformity of electric field is much higher than the electricity of parallel plate type
Pole structure.
In some embodiments, the first pole plate 3 and 4 distance the first ceramic wafer 1 of the second pole plate and the second ceramic wafer 2
The insulation cavity center that inside is formed is 8 ± 0.01mm, the arc section edge of first electrode plate 7 and the circle of second electrode plate 8
The insulation cavity center formed inside segmental arc Edge Distance the first ceramic wafer 1 and the second ceramic wafer 2 is 6 ± 0.01mm, and first
The field region that pole plate 3 and the second pole plate 4 generate covers first electrode plate 7 and second electrode plate 8 generates the area of electric field
Domain, structure of this magnetic field outside, including electric field avoid the first pole plate 3 and the second pole plate 4 itself to field distribution
It influences.
As shown in Figure 3-Figure 5, in some embodiments, the magnetic field strength between the first pole plate 3 and the second pole plate 4
0.26 ± 0.01T is maintained, is evenly distributed;" X " is integrally presented in field distribution between first electrode plate 7 and second electrode plate 8
Type, electric field strength maintain 2.64 ± 0.01V/m, are evenly distributed.
In some embodiments, the first ceramic wafer 1 and the second 2 porcelain plates of pottery are boron nitride material, both ensure that processing essence
Degree reaches 0.01mm grades, also strengthens the anti-splash effect of external plasma.
In some embodiments, the first pole plate 3 and the second pole plate 4 are neodymium iron boron material, and permanent magnetism performance is good, the service life
It is long, uniform magnetic field can be provided.
In some embodiments, first electrode plate 7 and second electrode plate 8 are austenite stainless steel material, and the material is not
Magnetic conduction, it is ensured that electric field forming region will not be magnetized between first electrode plate 7 and second electrode plate 8, not influence the equal of magnetic field
Even property.
In the present invention, term " first ", " second ", " third ", " the 4th " are used for description purposes only, and should not be understood as
Indication or suggestion relative importance.Term " multiple " refers to two or more, unless otherwise restricted clearly.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (7)
1. a kind of Uniform Electromagnetic Field device for plasma speed screening instrument, which is characterized in that including the first ceramic wafer,
Two ceramic wafers, the first pole plate, the second pole plate, the first pole plate gasket, the second pole plate gasket, first electrode plate, second
It is electrode plate, first electrode plate collets, second electrode plate collets, first electrode plate adapter, second electrode plate adapter, outer
Shell, wherein
First ceramic wafer and second ceramic wafer are engaged setting, and inside forms insulation cavity, in first ceramic wafer
First pole plate, first magnetic are from top to bottom set gradually in the insulation cavity formed with the second ceramic wafer inside
Pole plate gasket, the second pole plate gasket, second pole plate, in the first pole plate gasket and second magnetic pole
The first electrode plate and the second electrode plate are set gradually between plate gasket from left to right;
In the shell exterior, the first electrode plate adapter connects the first electrode plate collets, the first electrode
Plate collets connect the first electrode plate, and the second electrode plate adapter connects the second electrode plate collets, described
Second electrode plate collets connect the second electrode plate;
The shell is assemblied in outside first ceramic wafer and second ceramic wafer.
2. a kind of Uniform Electromagnetic Field device for plasma speed screening instrument according to claim 1, feature exist
In, first electrode plate one end opposite with the second electrode plate be arc, radius of curvature 2mm-3mm, described second
Electrode plate one end opposite with the first electrode plate is arc, radius of curvature 2mm-3mm.
3. a kind of Uniform Electromagnetic Field device for plasma speed screening instrument according to claim 1 or 2, feature
It is, first pole plate and second pole plate are formed inside first ceramic wafer and second ceramic wafer
Insulation cavity center be 8 ± 0.01mm, the circular arc at the arc section edge of the first electrode plate and the second electrode plate
The insulation cavity center formed inside first ceramic wafer described in section Edge Distance and second ceramic wafer is 6 ± 0.01mm,
The field region that first pole plate and second pole plate generate covers the first electrode plate and second electricity
The region of pole plate generation electric field.
4. a kind of Uniform Electromagnetic Field device for plasma speed screening instrument according to claim 1 or 2, feature
It is, the magnetic field strength between first pole plate and second pole plate maintains 0.26 ± 0.01T, is evenly distributed;
" X " type is integrally presented in field distribution between the first electrode plate and the second electrode plate, and electric field strength maintains 2.64
± 0.01V/m, is evenly distributed.
5. a kind of Uniform Electromagnetic Field device for plasma speed screening instrument according to claim 1-4,
It is characterized in that, first ceramic wafer and second ceramic wafer are boron nitride material.
6. a kind of Uniform Electromagnetic Field device for plasma speed screening instrument according to claim 1-4,
It is characterized in that, first pole plate and second pole plate are neodymium iron boron material.
7. a kind of Uniform Electromagnetic Field device for plasma speed screening instrument according to claim 1-4,
It is characterized in that, the first electrode plate and the second electrode plate are austenite stainless steel material.
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CN201910692358.8A CN110514446B (en) | 2019-07-30 | 2019-07-30 | Uniform electromagnetic field device for plasma velocity screening instrument |
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CN201910692358.8A CN110514446B (en) | 2019-07-30 | 2019-07-30 | Uniform electromagnetic field device for plasma velocity screening instrument |
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CN110514446B CN110514446B (en) | 2020-07-21 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3723733A (en) * | 1971-05-12 | 1973-03-27 | Hughes Aircraft Co | Stigmatic, crossed-field velocity filter |
JPH04181645A (en) * | 1990-11-15 | 1992-06-29 | Jeol Ltd | Wien filter |
JPH0554853A (en) * | 1991-08-21 | 1993-03-05 | Jeol Ltd | Wiener filter |
JP2000149843A (en) * | 1998-11-04 | 2000-05-30 | Nikon Corp | Optical system of charged particle beam map |
-
2019
- 2019-07-30 CN CN201910692358.8A patent/CN110514446B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3723733A (en) * | 1971-05-12 | 1973-03-27 | Hughes Aircraft Co | Stigmatic, crossed-field velocity filter |
JPH04181645A (en) * | 1990-11-15 | 1992-06-29 | Jeol Ltd | Wien filter |
JPH0554853A (en) * | 1991-08-21 | 1993-03-05 | Jeol Ltd | Wiener filter |
JP2000149843A (en) * | 1998-11-04 | 2000-05-30 | Nikon Corp | Optical system of charged particle beam map |
Non-Patent Citations (1)
Title |
---|
CAROLENA RUPRECHT: "Analyzing the Wien Filters for the DANTE Ion Accelerator", 《S.B.,MASSACHUSETTS INSTITUTE OF TECHNOLOGY,DEPARTMENT OF NUCLEAR SCIENCE AND ENGINEERING,2016》 * |
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