CN110504333A - 一种适用于薄片perc电池的“z”字图形开槽结构 - Google Patents
一种适用于薄片perc电池的“z”字图形开槽结构 Download PDFInfo
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- CN110504333A CN110504333A CN201910889594.9A CN201910889594A CN110504333A CN 110504333 A CN110504333 A CN 110504333A CN 201910889594 A CN201910889594 A CN 201910889594A CN 110504333 A CN110504333 A CN 110504333A
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 17
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 17
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000010276 construction Methods 0.000 claims description 16
- 238000002161 passivation Methods 0.000 abstract description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201910889594.9A CN110504333B (zh) | 2019-09-19 | 2019-09-19 | 一种适用于薄片perc电池的“z”字图形开槽结构 |
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CN201910889594.9A CN110504333B (zh) | 2019-09-19 | 2019-09-19 | 一种适用于薄片perc电池的“z”字图形开槽结构 |
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CN110504333A true CN110504333A (zh) | 2019-11-26 |
CN110504333B CN110504333B (zh) | 2024-07-05 |
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Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0364043A (ja) * | 1989-08-01 | 1991-03-19 | Sanyo Electric Co Ltd | 太陽電池 |
CN202796971U (zh) * | 2012-08-17 | 2013-03-13 | 苏州阿特斯阳光电力科技有限公司 | 一种晶体硅太阳能电池的背面结构 |
CN104835866A (zh) * | 2015-04-03 | 2015-08-12 | 江苏顺风光电科技有限公司 | 一种采用激光制备背钝化太阳电池的背面接触结构 |
CN106663703A (zh) * | 2014-07-23 | 2017-05-10 | 埃特19有限公司 | 柔性衬底材料和制造电子薄膜器件的方法 |
CN106910785A (zh) * | 2017-03-03 | 2017-06-30 | 广东爱康太阳能科技有限公司 | 双面太阳能电池组件及系统 |
CN107039543A (zh) * | 2017-03-03 | 2017-08-11 | 广东爱康太阳能科技有限公司 | P型perc双面太阳能电池及其组件、系统和制备方法 |
CN107148677A (zh) * | 2014-11-21 | 2017-09-08 | 三菱电机株式会社 | 太阳能电池的制造方法及太阳能电池 |
CN206628484U (zh) * | 2017-03-03 | 2017-11-10 | 广东爱康太阳能科技有限公司 | P型perc双面太阳能电池、组件和系统 |
CN207409505U (zh) * | 2017-10-30 | 2018-05-25 | 浙江爱旭太阳能科技有限公司 | 一种双面p型perc太阳能电池及光伏系统 |
CN209016018U (zh) * | 2018-09-27 | 2019-06-21 | 上海神舟新能源发展有限公司 | 适用于薄片perc电池激光工艺开槽结构 |
CN210092099U (zh) * | 2019-09-19 | 2020-02-18 | 通威太阳能(合肥)有限公司 | 一种适用于薄片perc电池的“z”字图形开槽结构 |
-
2019
- 2019-09-19 CN CN201910889594.9A patent/CN110504333B/zh active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0364043A (ja) * | 1989-08-01 | 1991-03-19 | Sanyo Electric Co Ltd | 太陽電池 |
CN202796971U (zh) * | 2012-08-17 | 2013-03-13 | 苏州阿特斯阳光电力科技有限公司 | 一种晶体硅太阳能电池的背面结构 |
CN106663703A (zh) * | 2014-07-23 | 2017-05-10 | 埃特19有限公司 | 柔性衬底材料和制造电子薄膜器件的方法 |
CN107148677A (zh) * | 2014-11-21 | 2017-09-08 | 三菱电机株式会社 | 太阳能电池的制造方法及太阳能电池 |
CN104835866A (zh) * | 2015-04-03 | 2015-08-12 | 江苏顺风光电科技有限公司 | 一种采用激光制备背钝化太阳电池的背面接触结构 |
CN106910785A (zh) * | 2017-03-03 | 2017-06-30 | 广东爱康太阳能科技有限公司 | 双面太阳能电池组件及系统 |
CN107039543A (zh) * | 2017-03-03 | 2017-08-11 | 广东爱康太阳能科技有限公司 | P型perc双面太阳能电池及其组件、系统和制备方法 |
CN206628484U (zh) * | 2017-03-03 | 2017-11-10 | 广东爱康太阳能科技有限公司 | P型perc双面太阳能电池、组件和系统 |
CN207409505U (zh) * | 2017-10-30 | 2018-05-25 | 浙江爱旭太阳能科技有限公司 | 一种双面p型perc太阳能电池及光伏系统 |
CN209016018U (zh) * | 2018-09-27 | 2019-06-21 | 上海神舟新能源发展有限公司 | 适用于薄片perc电池激光工艺开槽结构 |
CN210092099U (zh) * | 2019-09-19 | 2020-02-18 | 通威太阳能(合肥)有限公司 | 一种适用于薄片perc电池的“z”字图形开槽结构 |
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CN110504333B (zh) | 2024-07-05 |
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Effective date of registration: 20220511 Address after: 230088 southwest corner of the intersection of Changning Avenue and Xiyou Road, high tech Zone, Hefei City, Anhui Province Applicant after: TONGWEI SOLAR ENERGY (ANHUI) Co.,Ltd. Applicant after: TONGWEI SOLAR (CHENGDU) Co.,Ltd. Address before: No. 888, Changning Avenue, high tech Zone, Hefei City, Anhui Province, 230088 Applicant before: TONGWEI SOLAR ENERGY (HEFEI) Co.,Ltd. Applicant before: TONGWEI SOLAR (CHENGDU) Co.,Ltd. |
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