CN110497303B - Chemical mechanical polishing process method and system - Google Patents
Chemical mechanical polishing process method and system Download PDFInfo
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- CN110497303B CN110497303B CN201810466794.9A CN201810466794A CN110497303B CN 110497303 B CN110497303 B CN 110497303B CN 201810466794 A CN201810466794 A CN 201810466794A CN 110497303 B CN110497303 B CN 110497303B
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- 238000000034 method Methods 0.000 title claims abstract description 48
- 239000000126 substance Substances 0.000 title claims abstract description 36
- 238000007517 polishing process Methods 0.000 title abstract description 30
- 235000012431 wafers Nutrition 0.000 claims abstract description 289
- 238000005498 polishing Methods 0.000 claims abstract description 85
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 238000004886 process control Methods 0.000 claims description 10
- 238000005259 measurement Methods 0.000 description 20
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a chemical mechanical polishing process method and a system, wherein the method comprises the steps of grouping wafers acquired by different production chambers according to profile types to obtain a plurality of wafer groups; establishing a control model for each wafer group, wherein the control model comprises grinding parameters of the wafer; grinding the wafers in the wafer group according to the grinding parameters; collecting the removal amount of the film thickness of the wafer in the grinding process; adjusting the grinding parameters of the next wafer in the same wafer group according to the removal amount of the film thickness of the wafer, and grinding the next wafer according to the adjusted grinding parameters; the system comprises a production chamber and a grinding device, wherein the surfaces of wafers produced by different production chambers have different profiles; the polishing device is used for realizing the chemical mechanical polishing process method. The invention groups wafers with different outlines, and a group of wafers corresponds to a control system to dynamically adjust the polishing parameters of the chemical mechanical polishing process so as to improve the flatness of the wafers in the chemical mechanical polishing process.
Description
Technical Field
The present invention relates to process control systems in chemical mechanical polishing, and more particularly to a method and system for chemical mechanical polishing processes.
Background
With the decrease of the line width of microelectronic devices, the requirement of multi-layer interconnection structure is improved, and the good flatness (profile) of the wafer is important for the photolithography and etching processes, and is one of the main targets pursued by the chemical mechanical polishing (CMP, chemical Mechanical polishing) process. The polishing Pad (Pad) is deformed due to the top pressure in the chemical mechanical polishing process, meanwhile, the baffle ring is inevitably worn and deformed in the polishing process, the uneven pressure on the surface of the wafer can be caused, the center and edge removal rates are obviously different, and the flatness of the wafer is poor.
In the Chemical Mechanical Polishing (CMP) process, the difference between the center and edge thickness of the wafer is obvious due to the difference of flatness of wafers produced by different process chambers (tools) of the machine, and the difference of film topography (film wafer) is obvious. At present, the polishing parameters of all wafers are controlled by adopting the same system in the existing chemical mechanical polishing process, which cannot meet the requirement of efficient flatness improvement of chemical mechanical polishing.
Disclosure of Invention
The present invention provides a chemical mechanical polishing process and system to solve at least one of the above problems in the prior art.
To achieve the above object, the present invention provides a chemical mechanical polishing process method, comprising:
grouping wafers acquired by different production chambers according to the profile types to obtain a plurality of wafer groups;
Establishing a control model for each wafer group, wherein the control model comprises grinding parameters of the wafer;
Grinding the wafers in the wafer group according to the grinding parameters;
collecting the removal amount of the film thickness of the wafer in the grinding process; and
And adjusting the grinding parameters of the next wafer in the same wafer group according to the removal amount of the film thickness of the wafer, and grinding the next wafer according to the adjusted grinding parameters.
In one embodiment, the adjusting the polishing parameter of the next wafer in the same wafer set according to the removal amount of the film thickness of the wafer includes:
Establishing a correlation curve of the removal amount of the film thickness of the wafer and the grinding time; and
And adjusting the polishing time of the next wafer in the same wafer group based on the removal amount of the film thickness of the current wafer according to the correlation curve.
In one embodiment, the correlation curve represents the removal of film thickness of the wafer in direct proportion to polishing time.
In one embodiment, the adjusting the polishing parameter of the next wafer in the same wafer group according to the removal amount of the film thickness of the wafer further includes:
Dividing the wafer into a plurality of regions;
measuring the removal amount of the film thickness of each region of the current wafer after grinding; and
And adjusting the polishing pressure of each region of the next wafer in the same wafer group according to the removal amount of the film thickness of each region of the current wafer.
In one embodiment, the adjusting the polishing pressure of each region of the next wafer in the same wafer set according to the removal amount of the film thickness of each region of the current wafer includes:
Setting a target wafer removal amount in the wafer group; and
And comparing the removal amount of the film thickness of each region of the polished current wafer with the target removal amount, so as to adjust the polishing pressure of each region of the next wafer in the same wafer group according to the comparison result.
In one embodiment, the adjusting the polishing pressure of each area of the next wafer in the same wafer set according to the comparison result includes:
when the film thickness removal amount of a region of the current wafer is larger than the target removal amount, reducing the polishing pressure of the region of the next wafer in the same wafer group; and
And when the film thickness removal amount of one area of the current wafer is smaller than the target removal amount, increasing the polishing pressure of the area of the next wafer in the same wafer group.
In one embodiment, the control model includes a Run-to-Run (R2R) model.
To achieve the above object, the present invention provides a chemical mechanical polishing process system, comprising:
a plurality of production chambers for producing wafers, wherein surfaces of wafers produced by different production chambers have different profiles; and
The polishing apparatus is used for realizing the chemical mechanical polishing process method in any one of the embodiments.
In one embodiment, the grinding apparatus includes:
the front measurement module is used for measuring the first film thickness of the wafer before the chemical mechanical polishing process;
The post-measurement module is used for measuring the second film thickness of the wafer after the chemical mechanical polishing process;
The control system is connected with the front measurement module and the rear measurement module and is used for receiving the first film thickness of the wafer measured by the front measurement module and the second film thickness of the wafer measured by the rear measurement module so as to obtain the current film thickness removal amount of the wafer; determining the grinding time and the grinding pressure of each region of the next wafer in the same wafer group according to the grinding parameters of the wafer corresponding to the control model; and
And the grinding machine is used for carrying out chemical mechanical grinding on the next wafer in the same wafer group according to the grinding time and the grinding pressure of each region determined by the control system.
In one embodiment, the control model includes a process-to-process control model.
The invention groups wafers with different outlines produced by a machine table, each group of wafers corresponds to one control model, and the control system dynamically adjusts the polishing parameters of the control models according to the measured film thickness value to improve the flatness of the next wafer in the same wafer group after being polished by the chemical mechanical polishing process, so that the control system establishes a plurality of control models according to the wafers produced by a plurality of production chambers to carry out polishing control on the polishing machine table, so that all the wafers achieve uniform flatness after the chemical mechanical polishing process.
The foregoing summary is for the purpose of the specification only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments, and features described above, further aspects, embodiments, and features of the present invention will become apparent by reference to the drawings and the following detailed description.
Drawings
In the drawings, the same reference numerals refer to the same or similar parts or elements throughout the several views unless otherwise specified. The figures are not necessarily drawn to scale. It is appreciated that these drawings depict only some embodiments according to the disclosure and are not therefore to be considered limiting of its scope.
FIG. 1 is a flow chart of a chemical mechanical polishing process according to an embodiment of the invention.
FIG. 2 is a schematic diagram of a method for improving the wafer flatness during a chemical mechanical polishing process by using various control models according to an embodiment of the present invention.
FIG. 3 is a graph showing the relationship between the film thickness removal amount and the polishing time in the embodiment of the present invention.
FIG. 4 is a graph showing the pressure in the control model area of the experimental data module according to an embodiment of the present invention.
FIG. 5 is a schematic diagram of acquiring the pressure of each region of a next wafer according to the pressure of each region of the current wafer according to an embodiment of the present invention.
FIG. 6 is a block diagram of a chemical mechanical polishing process system according to an embodiment of the present invention.
Reference numerals:
110. the production room is provided with a plurality of production chambers,
120. The grinding device comprises a grinding device, a grinding device and a grinding device,
121. A front measuring module, which is used for measuring the front of the optical fiber,
122. The control system is used for controlling the control system,
123. A grinding machine table, a grinding machine table and a grinding machine table,
124. And a post-measurement module.
Detailed Description
Hereinafter, only certain exemplary embodiments are briefly described. As will be recognized by those of skill in the pertinent art, the described embodiments may be modified in various different ways without departing from the spirit or scope of the present invention. Accordingly, the drawings and description are to be regarded as illustrative in nature and not as restrictive.
Example 1
Referring to fig. 1, a chemical mechanical polishing process method of the present embodiment includes:
Step S10: and grouping the wafers acquired by different production chambers according to the profile types to obtain a plurality of wafer groups.
Step S20: a control model is built for each wafer set, wherein the control model includes polishing parameters for the wafer.
Step S30: and grinding the wafers in the wafer group according to the grinding parameters.
Step S40: the removal amount of the film thickness of the wafer during the polishing process is collected.
Step S50: and adjusting the polishing parameters of the next wafer in the same wafer group according to the removal amount of the film thickness of the wafer, and polishing the next wafer according to the adjusted polishing parameters.
In one embodiment, the precursor wafer information (priority LAYERS WAFER information) and the predicted quantity (Pre-measure) of each of the production chambers are collected from a database, and the wafers produced by the different production chambers are grouped according to the profile. Referring to fig. 2, the profile information includes information and a predicted amount of the front wafer, and the wafers are divided into A, B, C groups according to the wafer profile, each group acquiring a regional pressure gain gradient corresponding thereto.
Specifically, the group A wafers are all wafers with convex profiles around the middle concave according to the wafer profile. The A-group process to process model A 'R2R is constructed for the A-group wafers, wherein the A' R2R includes polishing parameters of the A-group wafers. Specifically, referring to fig. 2, a' R2R includes the area pressure gain of the group a wafers, which is distributed to decrease from the periphery to the middle, and the polishing parameters are adjusted to polish the next wafer in the group a wafers, so that the wafer surface achieves uniform flatness.
The group B wafers are all wafers with flat surface contours according to the wafer contours. The B-set process to process model B 'R2R, B' R2R is constructed for the B-set wafers including polishing parameters for the B-set wafers. Specifically, referring to fig. 2, B' R2R includes the area pressure gain of the group B wafer, where the area pressure gain is the same, and the polishing parameters are adjusted to polish the next wafer in the group B wafer, so as to achieve uniform flatness of the wafer surface.
The wafers in group C according to the wafer profile are all wafers with convex middle and concave periphery. And constructing a C group process-to-process model C 'R2R for the C group wafer, wherein the C' R2R comprises polishing parameters of the C group wafer. Specifically, referring to fig. 2, the C' R2R includes the area pressure gain of the C group of wafers, which is distributed to increase from the periphery to the middle, and the polishing parameters are adjusted to polish the next wafer in the C group of wafers, so as to achieve uniform flatness of the wafer surface.
According to the embodiment, the wafers with different contour types are grouped, and meanwhile, a control model is correspondingly built with each group, so that the wafers with the same contour type in the same wafer group can dynamically adjust polishing parameters in a chemical mechanical polishing process through the same control model, the chemical mechanical polishing process is controlled to polish the wafers with the same contour type in the same wafer group according to the contour of the current wafer, the flatness of the wafers is improved, and the wafer flatness is prevented from being worse due to inaccurate polishing parameters with different contour types of the current wafer and the next wafer.
In one embodiment, the control model includes a process-to-process control model.
In this embodiment, the wafer sets with different profile types correspondingly establish a process-to-process control model, so that wafers with the same profile type in the same wafer set can be dynamically adjusted in the chemical mechanical polishing process through the same process-to-process control model.
In one embodiment, in the step S10, polishing parameters of a next wafer in the same wafer set are adjusted according to the removal amount of the film thickness of the wafer, and the specific steps include:
Establishing a correlation curve of the removal amount of the film thickness of the wafer and the grinding time; and
And adjusting the polishing time of the next wafer in the same wafer group based on the removal amount of the film thickness of the current wafer according to the correlation curve.
In one embodiment, referring to FIG. 3, the correlation curve indicates that the removal of the film thickness of the wafer is proportional to the polishing time.
The method for adjusting the grinding time of the next wafer in the same wafer group comprises the following steps:
When the film thickness removal amount of the current wafer is larger than the target removal amount, the corresponding control model reduces the grinding time of the next wafer in the same wafer group;
When the film thickness removal amount of the current wafer is smaller than the target removal amount, the corresponding control model increases the polishing time of the next wafer in the same wafer group.
In this embodiment, the profile variation of the wafer before and after the cmp process is taken as the removal of the film thickness, a correlation curve (function variation curve) of the removal of the film thickness and the polishing time during polishing is established according to the polishing time, the removal of the film thickness of the current wafer is compared with the target removal, and the polishing time of the next cmp process of the wafer in the same wafer set is adjusted according to the comparison result, so that the removal of the film thickness of the next wafer is the same as or close to the target removal, and the flatness of the wafers in the same wafer set is uniform within the process control range.
In an embodiment, in the step S10, polishing parameters of a next wafer in the same wafer group are adjusted according to the removal amount of the film thickness of the wafer, and the specific steps further include:
Dividing the wafer into a plurality of regions;
measuring the removal amount of the film thickness of each region of the current wafer after grinding; and
And adjusting the polishing pressure of each region of the next wafer in the same wafer group according to the removal amount of the film thickness of each region of the current wafer.
In one embodiment, the adjusting the polishing pressure of each region of the next wafer in the same wafer set according to the removal amount of the film thickness of each region of the current wafer includes:
Setting a target wafer removal amount in the wafer group; and
And comparing the removal amount of the film thickness of each region of the polished current wafer with the target removal amount, so as to adjust the polishing pressure of each region of the next wafer in the same wafer group according to the comparison result.
In one embodiment, the adjusting the polishing pressure of each area of the next wafer in the same wafer set according to the comparison result includes:
When the film thickness removal amount of one area of the current wafer is larger than the target removal amount, reducing the grinding pressure of the area of the next wafer in the same wafer group; and
And when the film thickness removal amount of one area of the current wafer is smaller than the target removal amount, increasing the polishing pressure of the area of the next wafer in the same wafer group.
In this embodiment, the profile variation of each region of the wafer before and after the cmp process is taken as the film thickness removal amount, the target removal amount of the film thickness of each region is set as the standard removal amount, and the target removal amount is used as the second target value to be compared with the film thickness removal amount of each region of the current wafer in the same wafer set, and the polishing pressure of each region of the cmp process is adjusted according to the comparison result, so that the removal amount of each region of the next wafer is the same as or close to the second target value, and the flatness of the wafer in the same wafer set is uniform in the process control range.
In one embodiment, referring to fig. 4, an experimental data module of the wafer in the cmp process is constructed, and profile changes of the wafer before and after the cmp process are analyzed to obtain a polishing time gradient and a pressure gradient of each region of the wafer in the cmp process, so as to establish a system algorithm corresponding to the process to a process control model, so as to obtain polishing parameters and obtain polishing parameters for the cmp process of the next wafer in the same wafer set.
In one embodiment, the algorithm for adjusting the polishing time of the next wafer in the same wafer set includes:
Current wafer polishing time + [ first target value- (current wafer cmp pre-process film thickness-current wafer cmp post-process film thickness) ]/polishing time gradient = next wafer polishing time.
The first target value refers to a target removal amount of the wafer film thickness.
In one embodiment, referring to the data parameters in fig. 4 and 5, the algorithm for adjusting the pressure of each region of the next wafer in the same wafer group includes:
{ present wafer area pressure + [ second target value- (thickness before present wafer area cmp process-thickness after present wafer area cmp process) ]/area pressure gradient } ] area pressure gain = next wafer area pressure.
In fig. 4 z7+20% and z7-20% represent an increase of 20% pressure in the seventh zone and a decrease of 20% pressure in the seventh zone, in which curves z7+20% and z7-20% represent the peak and trough values of the corresponding curves;
FIG. 4 shows that z6+20% and z6-20% represent an increase of 20% pressure in the sixth region and a decrease of 20% pressure in the sixth region, and that the curves z6+20% and z6-20% represent the peak and valley values of the corresponding curves;
In fig. 4 z5+20% and z5-20% represent an increase of 20% pressure in the fifth zone and a decrease of 20% pressure in the fifth zone, and in the figure the curves z5+20% and z5-20% represent the peak and trough values of the corresponding curves.
In fig. 5, the pressure gradient of each region of the current wafer (first wafer) is obtained according to the wafer profile, and the pressure gradient of each region of the next wafer (second wafer) is adjusted and obtained according to the current pressure of each region, wherein in fig. 5, z7 (zone 7) is a seventh region, z6 (zone 6) is a sixth region, z5 (zone 5) is a fifth region, z4 (zone 4) is a fourth region, z3 (zone 3) is a third region, z2 (zone 2) is a second region, and z1 (zone 1) is a first region.
In a specific embodiment, 95% or less of the zone pressure gain is 105% or less.
In this embodiment, by establishing an experimental data module for the profile variation of the wafer before and after the cmp process, the polishing time gradient and the pressure gradient of each region of the wafer in the cmp process are obtained, so as to establish an algorithm to calculate the polishing parameters of the next wafer in the same wafer set, so that the wafers with the same profile in the same wafer set can perform polishing parameter adjustment conforming to the profile type, and thus, the wafers with better flatness can be obtained after the wafers in the same wafer set undergo the cmp process.
Example two
Referring to FIG. 6, a chemical mechanical polishing process system according to the present embodiment includes:
A plurality of production chambers 110 for producing wafers, wherein surfaces of wafers produced by different production chambers 110 have different profiles; and
The polishing apparatus 120 is used to implement the chemical mechanical polishing process method described in the first embodiment.
In one embodiment, the polishing apparatus 120 includes: a front measurement module 121, a rear measurement module 124, a control system 122 and a grinder station 123.
The front measurement module 121 is connected to the production chamber 110, and the front measurement module 121 is used for measuring a first film thickness of a wafer before a chemical mechanical polishing process.
The post-measurement module 124 is connected to the polishing platen 123, and the post-measurement module 124 is used for measuring the second film thickness of the wafer after the chemical mechanical polishing process.
The control system 122 is connected to the front measurement module 121 and the rear measurement module 124, and is configured to receive the first film thickness of the wafer measured by the front measurement module 121 and the second film thickness of the wafer measured by the rear measurement module 124, so as to obtain the current polishing parameters of the wafer; and determining the polishing time and the polishing pressure of each region of the next wafer in the same wafer group according to the film thickness removal amount of the wafer corresponding to the control model.
The polishing platform 123 is connected to the front measurement module 121, the rear measurement module 124, and the control system 122, and is configured to receive the wafer in the front measurement module 121, and perform chemical mechanical polishing on a next wafer in the same wafer set according to the polishing time and the polishing pressure of each area determined by the control system 122.
In one embodiment, the control model includes a process-to-process control model.
The production chamber 110 for producing wafers with different profiles is connected to the control system 122, and the control system 122 dynamically adjusts polishing parameters of the cmp process according to the measured film thickness value, so as to improve the flatness of the next wafer in the same wafer set after being polished by the polishing table 123. Therefore, the control system 122 establishes a plurality of control models according to the wafers produced by the production chambers 110 to perform polishing control on the polishing platen 123, so that all the wafers can achieve uniform flatness after the cmp process.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any person skilled in the art will readily recognize that various changes and substitutions are possible within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; the device can be mechanically connected, electrically connected and communicated; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "above" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is less level than the second feature.
The above disclosure provides many different embodiments, or examples, for implementing different structures of the invention. The foregoing description of specific example components and arrangements has been presented to simplify the present disclosure. They are, of course, merely examples and are not intended to limit the invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, which are for the purpose of brevity and clarity, and which do not themselves indicate the relationship between the various embodiments and/or arrangements discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art will recognize the application of other processes and/or the use of other materials.
Claims (5)
1. A method of chemical mechanical polishing, comprising:
grouping wafers acquired by different production chambers according to the profile types to obtain a plurality of wafer groups;
Establishing a control model for each wafer group, wherein the control model comprises grinding parameters of the wafer;
Grinding the wafers in the wafer group according to the grinding parameters;
collecting the removal amount of the film thickness of the wafer in the grinding process; and
Adjusting the grinding parameters of the next wafer in the same wafer group according to the removal amount of the film thickness of the wafer, and grinding the next wafer according to the adjusted grinding parameters;
wherein the adjusting the polishing parameters of the next wafer in the same wafer group according to the removal amount of the film thickness of the wafer comprises:
Establishing a correlation curve of the removal amount of the film thickness of the wafer and the grinding time; and
According to the correlation curve, adjusting the grinding time of the next wafer in the same wafer group based on the removal amount of the film thickness of the current wafer;
Wherein, the adjusting the polishing parameters of the next wafer in the same wafer group according to the removal amount of the film thickness of the wafer further comprises:
Dividing the wafer into a plurality of regions;
measuring the removal amount of the film thickness of each region of the current wafer after grinding; and
And adjusting the polishing pressure of each region of the next wafer in the same wafer group according to the removal amount of the film thickness of each region of the current wafer.
2. The method of claim 1, wherein the correlation curve indicates that the removal of film thickness of the wafer is proportional to polishing time.
3. The method of claim 1, wherein adjusting the polishing pressure of each region of a next wafer in the same wafer set based on the removal of the film thickness of each region of a current wafer comprises:
Setting a target wafer removal amount in the wafer group; and
And comparing the removal amount of the film thickness of each region of the polished current wafer with the target removal amount, so as to adjust the polishing pressure of each region of the next wafer in the same wafer group according to the comparison result.
4. The method of claim 3, wherein adjusting the polishing pressure of each region of the next wafer in the same wafer set based on the comparison result comprises:
when the film thickness removal amount of a region of the current wafer is larger than the target removal amount, reducing the polishing pressure of the region of the next wafer in the same wafer group; and
And when the film thickness removal amount of one area of the current wafer is smaller than the target removal amount, increasing the polishing pressure of the area of the next wafer in the same wafer group.
5. The method of claim 1, wherein the control model comprises a process-to-process control model.
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| CN114603417B (en) * | 2022-03-31 | 2023-01-24 | 生益电子股份有限公司 | PCB grinding method, PCB back grinding device and PCB |
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