CN110491955A - Solar battery and preparation method thereof - Google Patents
Solar battery and preparation method thereof Download PDFInfo
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- CN110491955A CN110491955A CN201811163457.9A CN201811163457A CN110491955A CN 110491955 A CN110491955 A CN 110491955A CN 201811163457 A CN201811163457 A CN 201811163457A CN 110491955 A CN110491955 A CN 110491955A
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- backplane
- back surface
- surface field
- hollow part
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- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 claims abstract description 17
- 238000007639 printing Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000002002 slurry Substances 0.000 abstract description 13
- 239000002699 waste material Substances 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
This application involves a kind of solar batteries and preparation method thereof.The production method of solar battery, comprising: form cell substrates, cell substrates have the front and the back side for setting of supporting or opposing;The neither conllinear anchor point of backplane and at least three liang is formed at the back side of cell substrates;By at least three positioning point locations, the back surface field of connection backplane is formed at the back side of cell substrates.The hollow part of back surface field and backplane can be realized accurate contraposition when forming the back surface field of connection backplane by the application production method.Therefore, it is different from traditional back surface field and directly overlaps the method being printed on backplane, the area ratio of the respective surfaces of the area of hollow part and backplane can be designed as 1:1-1:1.1 by the application method, that is the area on the corresponding surface of the hollow part of backplane and back surface field is identical as the area of hollow part or very close, and then backplane slurry can be effectively saved, prevent the waste of backplane slurry.
Description
Technical field
This application involves technical field of solar, more particularly to a kind of solar battery and preparation method thereof.
Background technique
With the development of heliotechnics, occurs effectively absorbing solar energy and convert it into the solar-electricity of electric energy
Pond.Solar battery would generally print backplane and back surface field by method for printing screen in cell backside.Back surface field and substrate contact, will
The most photo-generated carriers formed in PN junction are guided to backplane, then are connected to circuit by backplane.
In solar energy manufacturing process, since backplane, back surface field use two different slurries respectively, need the printing of two steps complete
At.In order to cover silicon substrate back surface without leaking silicon by back surface field and backplane, in conventional fabrication method, backplane surface size
Be commonly designed bigger than the size of the hollow part of back surface field leakage backplane is more, is overlapped on backplane so that back surface field directly prints.
At this point, backplane edge is completely covered by back surface field, so that back surface field can cover silicon substrate back surface together with backplane collective effect
Lid, but will also result in the waste of backplane slurry simultaneously.
Summary of the invention
Based on this, it is necessary in view of the above technical problems, provide a kind of reduction backplane slurry waste, save production cost
Solar battery and preparation method thereof.
A kind of production method of solar battery, comprising:
Cell substrates are formed, the cell substrates have the front and the back side for setting of supporting or opposing;
The neither conllinear anchor point of backplane and at least three liang is formed at the back side of the cell substrates;
By at least three positioning point location, the back for connecting the backplane is formed at the back side of the cell substrates
, the back surface field have hollow part, the hollow part it is corresponding with the backplane be arranged and be used to expose the backplane, it is described to engrave
The area ratio of the respective surfaces of the area in vacancy and the backplane is 1:1-1:1.1, described in at least partly described backplane process
Hollow part exposes, and the distance between respective edges of the backplane edge and the hollow part are less than 50 μm.
The shape of the respective surfaces of the hollow part and the backplane is rectangle in one of the embodiments, described
The ratio between width of respective surfaces of the width of hollow part and the backplane is 1:1-1:1.1.
It is described in one of the embodiments, to include: by the positioning point location
At least three locators corresponding with the anchor point are installed on back surface field printing machine;
Each locator grabs the corresponding anchor point, and then the back surface field printing machine is positioned.
The locator is camera in one of the embodiments,.
The back side of cell substrates includes the marginal zone in backplane area and the encirclement backplane area in one of the embodiments,
The backplane is formed in the backplane area, and the quantity of the anchor point is four, and four anchor points are located at the marginal zone.
The diameter of the anchor point is 0.1mm-1mm in one of the embodiments,.
The anchor point is round or cross in one of the embodiments,.
The formation cell substrates include: in one of the embodiments,
The substrate with the first doping type is provided, the substrate includes the support or oppose front and the back side of setting;
Back passivating film is formed at the back side of the substrate;
Back surface field slot is formed on the passivating film, and then forms the cell substrates.
First doping type is p-type in one of the embodiments, and the material of the back surface field is aluminium.
A kind of solar battery makes to be formed according to method described in any of the above embodiments.
The production method of above-mentioned solar battery forms at least three anchor points while forming backplane.It is carried on the back being formed
It is positioned when field by least three anchor points, and then can be when forming the back surface field of connection backplane, by the hollow part of back surface field
Accurate contraposition is realized with backplane.Therefore, the application production method, which is different from traditional back surface field and directly overlaps, is printed on backplane
On method, the area ratio of the respective surfaces of the area of hollow part and backplane can be designed as to 1:1-1:1.1, i.e., backplane with
The area on the corresponding surface of the hollow part of back surface field is identical as the area of hollow part or very close, and then can effectively save backplane slurry
Material, prevents the waste of backplane slurry.
Detailed description of the invention
Fig. 1 is the production flow diagram of solar battery in one embodiment;
Fig. 2 is that the back side of cell substrates in one embodiment forms the schematic diagram after backplane;
Fig. 3 is that the back side of cell substrates in one embodiment forms the schematic diagram after back surface field;
Fig. 4 is in one embodiment by the flow chart of positioning point location;
Fig. 5 is back surface field printing machine schematic diagram in one embodiment;
Fig. 6 is the flow chart that cell substrates are formed in one embodiment;
Fig. 7 is solar battery schematic diagram in one embodiment.
Appended drawing reference:
100- cell substrates;101- backplane area;The marginal zone 102-;200- backplane;300- anchor point;400- back surface field;410-
Hollow part;500- back surface field printing machine;510- locator;;600- positive electrode;110- substrate;120- carries on the back passivating film;121- aluminium oxide
Layer;122- silicon nitride layer;130- emitter;The positive passivating film of 140-.
Specific embodiment
It is with reference to the accompanying drawings and embodiments, right in order to which the objects, technical solutions and advantages of the application are more clearly understood
The application is further elaborated.It should be appreciated that specific embodiment described herein is only used to explain the application, not
For limiting the application.
The production method of solar battery provided by the present application can be widely applied to various silica-based solar cells, when
So, the other kinds of solar battery such as compound film solar battery should can also be used for.The application to this and it is unlimited
System.
In one embodiment, as shown in Figure 1, providing a kind of production method of solar battery, include the following steps:
Step S1 forms cell substrates 100.
Cell substrates 100 have the front and the back side for setting of supporting or opposing.Cell substrates 100 can be underlay substrate (such as P
Type silicon substrate etc.), or the substrate that functional film layer (such as passivating film film layer) is formed afterwards is formed on underlay substrate.
Step S2 forms the neither conllinear anchor point of backplane 200 and at least three liang at the back side of cell substrates 100
300.With reference to Fig. 2.
Backplane 200 can be formed simultaneously with anchor point 300 by modes such as silk-screen printings.The quantity of backplane 200 can be
It is multiple, and 200 array arrangement of multiple backplanes, and then the electric energy that will be converted on solar battery, it uniformly effectively conducts to outer
Portion's circuit.The quantity of anchor point 300 is at least three, and at least three 300 liang of anchor points are neither conllinear, and then may be implemented to align
Function.
Step S3 is positioned by least three anchor points 300, forms connection backplane 200 at the back side of cell substrates 100
Back surface field 400.
With reference to Fig. 3, back surface field 400 has hollow part 410.Hollow part 410 it is corresponding with backplane 200 setting and be used to expose back
Pole 200.
While due to forming backplane 200, at least three anchor points 300 are formd.Therefore, this step is forming back surface field
It is positioned, and then can will be carried on the back when forming the back surface field 400 of connection backplane 200 by least three anchor points 300 when 100
The hollow part and backplane 200 of field 400 realize that accurate contraposition connects.
Therefore, the application production method be different from conventional method (back surface field 400 directly overlap joint be printed on backplane 200 and lead
Cause 200 size of backplane need to design it is very big), can by the area of hollow part 410 and the area of the respective surfaces of backplane 200 it
Than being designed as 1:1-1:1.1, i.e. the area Yu hollow part 410 on the surface corresponding with the hollow part 410 of back surface field 400 of backplane 200
Area is identical or very close, and then can effectively save 200 slurry of backplane, prevents the waste of 200 slurry of backplane.
Meanwhile the solar battery of the application method production, at least partly backplane 200 expose by hollow part 410, backplane
The distance between the respective edges at 200 edges and hollow part 410 guarantee that back surface field 400 is common together with backplane 200 less than 50 μm
100 back side of cell substrates can be completely covered or nearly be completely covered without exposing by effect, and then guarantee battery efficiency and pass
It is almost the same that system method makes the solar battery to be formed.
In the ideal case, the area of hollow part 410 and the area ratio of the respective surfaces of backplane 200 can be designed as
1:1.The distance between the respective edges of 200 edge of backplane and hollow part 410 are zero.Back surface field 400 surrounds backplane completely at this time
200, and then connect backplane 200.
In one embodiment, the shape of the respective surfaces of the hollow part 410 and backplane 200 of back surface field 400 is rectangle.This
When, it is 1:1-1:1.1 that the ratio between the width of hollow part 400 and the width of respective surfaces of backplane 200, which is arranged,.At this point, making backplane
The width of 200 respective surfaces is not less than the width of hollow part 400, can guarantee as far as possible may be to the dew of cell substrates 100
In the width direction that artificial situation is affected, the distance between respective edges of backplane edge and hollow part are zero or near zero,
To reduce the exposing of cell substrates 100, reinforce the guarantee to battery efficiency.
Due to length direction the exposing situations of cell substrates 100 is influenced it is smaller, can be set the length of hollow part 400 with
The length of the respective surfaces of backplane 200 is identical, and the length that hollow part 400 also can be set is less than the respective surfaces of backplane 200
Length, it might even be possible to which the length that hollow part 400 is arranged is slightly larger than (can be set be greater than be limited within 50 μm) backplane 200
Respective surfaces length.
In one embodiment, with reference to Fig. 4, included the following steps: in step S3 by the positioning of anchor point 300
Step S31 installs at least three locators 510 corresponding with anchor point 300 on back surface field printing machine 500.
With reference to Fig. 5, back surface field printing machine 500 is the machine for silk-screen printing back surface field 400.It is installed on back surface field printing machine 500
The quantity of locator 510 should be no less than the quantity of anchor point 300 so that locator 510 corresponding with anchor point can be set
It sets.
Step S32, each locator 510 grabs corresponding anchor point 300, and then back surface field printing machine 500 is determined
Position.
Back surface field printing machine 500 is positioned according to the crawl result of locator 510.Therefore, in positioning back surface field printing machine 500
Before, it needs each locator 510 grabbing corresponding anchor point 300.It is grabbed relatively when by each locator 510
When the anchor point 300 answered, back surface field printing machine 500 is positioned, and then can start to carry out the printing of back surface field 400.
In one embodiment, locator 510 is camera.Camera has the basic functions such as still image capture, it
By camera lens acquire image after, by camera photosensory assembly circuit and control assembly image is carried out to be processed and converted to electricity
The digital signal that brain can identify, and then grab the information of identification anchor point 300 with can be convenient.Certainly, the embodiment of the present application
Used in locator 510 be not limited to camera, may be that other can identify the various sensors of anchor point 300
Deng.The application does not limit this.
In one embodiment, the quantity of anchor point 300 is four.Since anchor point 300 is actually not a point, tool
There are certain volume and surface area, may result in when being positioned with anchor point 300 has certain deviation.Therefore, anchor point 300
Quantity is four, i.e., does not increase system complexity too much, and positioning accuracy can be improved.
With reference to Fig. 2, the back side of cell substrates 100 includes backplane area 101 and the marginal zone 102 for surrounding backplane area 101.Backplane
200 are formed in backplane area 101.Four anchor points 300 can be located at marginal zone 102, so that the arrangement of backplane 200 is not by shadow
It rings.Meanwhile when by positioning point location being realized by locator 510, anchor point 300 is located at marginal zone 102 and is also more convenient for
The installation of locator 500.Specifically, a anchor point 300 can be located at four angles of marginal zone 102.
In certain the embodiment of the present application, anchor point 300 can not also be located at marginal zone 102, or be located at marginal zone 102 still
And be distributed in four angles, or positioning 300 quantity can not also be four etc., the application to this with no restriction.
In one embodiment, in order to reduce influence of 300 own dimensions of anchor point to positioning accuracy, anchor point is set
Diameter be 0.1mm-1mm.Diameter refers to that anchor point 300 can maximum between any two points on identified marginal surface herein
Distance.
In one embodiment, anchor point 300 is round or cross, and then convenient for passing through the center of circle or right-angled intersection position
It determines its coordinate, improves system positional accuracy.Certainly, the shape of anchor point 300 may be other shapes, such as square,
Diamond shape, trapezoidal, regular hexagon etc..
In one embodiment, with reference to Fig. 6, forming cell substrates 100 be may include steps of;
Step S11 provides the substrate 110 with the first doping type.
Front and the back side of the substrate 110 including setting of supporting or opposing.First doping type can choose as p-type.The substrate of p-type
110 front can be handled by making herbs into wool, and form antireflective flannelette, improve battery efficiency.
Step S12 forms back passivating film 120 at the back side of substrate 110.With reference to Fig. 7.
Formed carry on the back passivating film 120 before, can also the front first to substrate 110 be diffused, formed with substrate 110 adulterate
The emitter 130 of opposite the second doping type (such as N-type) of type.It, may overleaf side when front diffuses to form emitter 130
Edge is also diffused into emitter 130.Therefore, the back side can be performed etching after front diffuses to form emitter 130, removal back
Surface launching pole 130.
Back passivating film 120, which plays, is limited in few son in photo-generated carrier in PN junction, and then prevents it in battery back table
Face is compound, and then improves battery efficiency.Carrying on the back passivating film 120 may include alumina layer 121 and silicon nitride layer 122, and the two passes through
Deposition process deposits twice, and then reinforces passivation.
Emitter 130 can also form positive passivating film 140 away from the one side of substrate 110.Positive passivating film 140 is played photoproduction
Few son in carrier is limited in PN junction, and then prevents it compound in battery front surface, and then improves battery efficiency.Positive passivation
140 material of film may be silicon nitride.Also, positive passivating film 140 can sink simultaneously with the silicon nitride layer 122 of back passivating film 120
Product.
Step S13 forms back surface field slot on passivating film 120, and then forms cell substrates.
Back surface field slot is formed on passivating film 120, and then when forming back surface field 400 so that back surface field 400 pass through back surface field slot and with
Substrate 110 contacts.When the first doping type is p-type (i.e. substrate 110 is p-type), 400 material of back surface field can be aluminium.Al-BSF
400 can form P+ knot with P type substrate 110.On the one hand more sub (holes) in photo-generated carrier is made to pass through preferable ohm
Contact conducts;On the other hand make few sub (electronics) in photo-generated carrier since potential barrier increases, and return in PN junction, into
And few son probability compound in back surface is reduced, improve battery efficiency.
With continued reference to Fig. 7, the application production method after having formed back surface field 400, can also on positive passivating film 140 shape
At positive electrode 600, and then form solar battery.Positive electrode 600 passes through positive passivating film 140 and connect with emitter 130, and then will
The electric energy of generation is led to external circuit.
In the embodiment of the present application, a kind of solar battery is also provided, which can pass through any of the above-described method system
It forms.The area ratio of the respective surfaces of the area and backplane 200 of the hollow part 410 of the back surface field 400 of solar battery designs
For 1:1-1:1.1, i.e. the area phase of the area Yu hollow part 410 on the surface corresponding with the hollow part 410 of back surface field 400 of backplane 200
It is same or very close, and then 200 slurry of backplane can be effectively saved when manufacturing, prevent the waste of 200 slurry of backplane.
Meanwhile the application solar battery at least partly backplane 200 by hollow part 410 expose, 200 edge of backplane with engrave
The distance between the respective edges in vacancy 410 guarantee that back surface field 400 can be incited somebody to action together with 200 collective effect of backplane less than 50 μm
100 back side of cell substrates is completely covered or is nearly completely covered without exposing, and then guarantees that battery efficiency and conventional method make
The solar battery of formation is almost the same.
In conclusion the application production method can be when forming the back surface field of connection backplane, by the hollow part and back of back surface field
Realize accurate contraposition in pole.Therefore, it is different from traditional back surface field and directly overlaps the method being printed on backplane, the application method
The area ratio of the respective surfaces of the area of hollow part and backplane can be designed as to 1:1-1:1.1, i.e. backplane and back surface field is engraved
The area on the corresponding surface in vacancy is identical as the area of hollow part or very close, and then can effectively save backplane slurry, prevents
The waste of backplane slurry.
Each technical characteristic of above embodiments can be combined arbitrarily, for simplicity of description, not to above-described embodiment
In each technical characteristic it is all possible combination be all described, as long as however, the combination of these technical characteristics be not present lance
Shield all should be considered as described in this specification.
The several embodiments of the application above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the concept of this application, various modifications and improvements can be made, these belong to the protection of the application
Range.Therefore, the scope of protection shall be subject to the appended claims for the application patent.
Claims (10)
1. a kind of production method of solar battery characterized by comprising
Cell substrates are formed, the cell substrates have the front and the back side for setting of supporting or opposing;
The neither conllinear anchor point of backplane and at least three liang is formed at the back side of the cell substrates;
By at least three positioning point location, the back surface field for connecting the backplane, institute are formed at the back side of the cell substrates
Back surface field is stated with hollow part, be arranged corresponding with the backplane of the hollow part and be used to expose the backplane, the hollow part
Area and the backplane respective surfaces area ratio be 1:1-1:1.1, at least partly described backplane pass through the hollow out
Place exposes, and the distance between respective edges of the backplane edge and the hollow part are less than 50 μm.
2. the method according to claim 1, wherein the shape of the respective surfaces of the hollow part and the backplane
For rectangle, the ratio between width of respective surfaces of the width of the hollow part and the backplane is 1:1-1:1.1.
3. the method according to claim 1, wherein described include: by the positioning point location
At least three locators corresponding with the anchor point are installed on back surface field printing machine;
Each locator grabs the corresponding anchor point, and then the back surface field printing machine is positioned.
4. according to the method described in claim 3, it is characterized in that, the locator is camera.
5. method according to claim 1 or 3, which is characterized in that the back side of cell substrates includes backplane area and encirclement institute
The marginal zone in backplane area is stated, the backplane is formed in the backplane area, and the quantity of the anchor point is four, four positioning
Point is located at the marginal zone.
6. the method according to claim 1, wherein the diameter of the anchor point is 0.1mm-1mm.
7. the method according to claim 1, wherein the anchor point is round or cross.
8. the method according to claim 1, wherein the formation cell substrates include:
The substrate with the first doping type is provided, the substrate includes the support or oppose front and the back side of setting;
Back passivating film is formed at the back side of the substrate;
Back surface field slot is formed on the passivating film, and then forms the cell substrates.
9. according to the method described in claim 8, it is characterized in that, first doping type is p-type, the material of the back surface field
For aluminium.
10. a kind of solar battery, which is characterized in that -9 described in any item methods make to be formed according to claim 1.
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