CN110488543B - Display device - Google Patents

Display device Download PDF

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Publication number
CN110488543B
CN110488543B CN201910777793.0A CN201910777793A CN110488543B CN 110488543 B CN110488543 B CN 110488543B CN 201910777793 A CN201910777793 A CN 201910777793A CN 110488543 B CN110488543 B CN 110488543B
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display device
metal layer
electrode
layer
electrodes
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CN110488543A (en
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陈志成
刘贵文
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AU Optronics Corp
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AU Optronics Corp
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/165Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field
    • G02F1/166Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
    • G02F1/167Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/165Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field
    • G02F1/1675Constructional details
    • G02F1/1676Electrodes
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/165Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field
    • G02F1/1685Operation of cells; Circuit arrangements affecting the entire cell
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/017Gesture based interaction, e.g. based on a set of recognized hand gestures

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Molecular Biology (AREA)
  • Human Computer Interaction (AREA)
  • Electrochemistry (AREA)
  • Geometry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Position Input By Displaying (AREA)

Abstract

A display device includes a substrate and an electrode array. The substrate comprises a display area and a peripheral area. The electrode array is configured on the substrate and positioned in the display area. The electrode array comprises a plurality of scanning lines, a plurality of data lines, a plurality of common electrodes and a plurality of first transmission electrodes. The scanning lines and the data lines are staggered to define a plurality of sub-pixels. Each sub-pixel comprises at least one pixel electrode. The common electrodes are respectively configured in the sub-pixels. The first transmission electrode and the common electrode are electrically independent. The pixel electrode is configured between any two first transmission electrodes.

Description

Display device
Technical Field
The present invention relates to a display device, and more particularly, to a display device capable of detecting 3D gestures.
Background
With the development of technology, the demand of display devices is becoming more and more extensive. Traditionally, the 3D near field technology uses a glass type stack design, and the thickness of the panel module is large. And when the size of the panel is larger, the influence of the touch equivalent capacitance on the sensitivity of touch gesture judgment is more obvious.
Therefore, how to reduce the thickness of the panel module and reduce the touch equivalent capacitance is a consideration and challenge of the current design.
Disclosure of Invention
One embodiment of the invention relates to a display device, which comprises a substrate and an electrode array. The substrate comprises a display area and a peripheral area. The electrode array is configured on the substrate and positioned in the display area. The electrode array comprises a plurality of scanning lines, a plurality of data lines, a plurality of common electrodes and a plurality of first transmission electrodes. The scanning lines and the data lines are staggered to define a plurality of sub-pixels. Each sub-pixel comprises at least one pixel electrode. The common electrodes are respectively configured in the sub-pixels. The first transmission electrode and the common electrode are electrically independent. The pixel electrode is configured between any two first transmission electrodes.
The invention is described in detail below with reference to the drawings and specific examples, but the invention is not limited thereto.
Drawings
Fig. 1 is a schematic cross-sectional view of a display device according to some embodiments of the present invention.
Fig. 2 is a schematic diagram of a display device according to some embodiments of the invention.
Fig. 3 is a schematic diagram of a display device according to some embodiments of the invention.
Fig. 4A is a partially enlarged schematic view of a display device according to some embodiments of the invention.
Fig. 4B is a schematic perspective view of a display device according to the embodiment of fig. 4A.
Fig. 5A is a partially enlarged schematic view of another display device according to some embodiments of the invention.
Fig. 5B is a schematic perspective view of a display device according to the embodiment of fig. 5A.
FIG. 6A is a cross-sectional view of the display device of the embodiment of FIG. 5A along line A5-A5'.
FIG. 6B is a cross-sectional view of the display device of the embodiment of FIG. 5A along line B5-B5'.
Fig. 7A is a partially enlarged schematic view of another display device according to some embodiments of the invention.
Fig. 7B is a schematic perspective view of a display device according to the embodiment of fig. 7A.
FIG. 8A is a cross-sectional view of the display device of the embodiment of FIG. 7A along line A7-A7'.
FIG. 8B is a cross-sectional view of the display device of the embodiment of FIG. 7A along line B7-B7'.
Fig. 9A is a partially enlarged schematic view of another display device according to some embodiments of the invention.
Fig. 9B is a schematic perspective view of a display device according to the embodiment of fig. 9A.
FIG. 10A is a cross-sectional view of the display device of the embodiment of FIG. 9A along line A9-A9'.
FIG. 10B is a cross-sectional view of the display device of the embodiment of FIG. 9A along line B9-B9'.
Fig. 11A and 11B are schematic views respectively showing another display device according to some embodiments of the present invention.
Fig. 12A and 12B are schematic diagrams respectively illustrating signal timing sequences according to some embodiments of the present invention.
Wherein, the reference numbers:
100: display device
104: scanning line
106: data line
108: touch control wire
110. 190: substrate
120: driving circuit
140: display area
142: first transfer electrode
160: peripheral zone
162: first induction electrode
180: electrode array
PX, PX _ R, PX _ G, PX _ B: sub-pixel
PXe: pixel electrode
Vcom: common electrode
TP: touch electrode
TP _ TX: a second transfer electrode
TP _ RX: second induction electrode
A TFT: transistor with a metal gate electrode
LC: display medium layer
AS: semiconductor layer
GI. BP1, BP2, BP3, PL: insulating layer
M1, M2, M21, M22, M3, M3_1, M3_2, G _ M3: metal layer
ITO1, ITO2, G _ ITO1, C _ ITO 1: conductive film layer
NPX, N41, N42, N43, N44, N51, N52, N53, N54, N71, N72, N73, N74, N92, N93: opening of the container
X, Y, Z: direction of rotation
Detailed Description
The invention will be described in detail with reference to the following drawings, which are provided for illustration purposes and the like:
the embodiments are described in detail below with reference to the drawings, but the embodiments are only for explaining the invention and not for limiting the invention, and the description of the structural operation is not for limiting the execution sequence thereof, and any structure obtained by recombining the elements and having equivalent functions is included in the scope of the invention.
Please refer to fig. 1. Fig. 1 is a cross-sectional view of a display device 100 according to some embodiments of the invention. As shown in fig. 1, the display device 100 includes a lower substrate 110, a display medium layer LC, and an upper substrate 190. The display medium layer LC is positioned between the lower substrate 110 and the upper substrate 190. Between the lower substrate 110 and the display medium layer LC, the display device 100 sequentially includes a first metal layer M1, a second metal layer M2, a third metal layer M3, a first conductive thin film layer ITO1, and a second conductive thin film layer ITO 2. In some embodiments, the order of M3 and ITO1 may be changed according to different dry etching or wet etching methods.
In some embodiments, the display medium layer LC may be a liquid crystal layer or an electrophoretic layer. The substrate may be implemented by a glass substrate, a plastic substrate, or other suitable rigid or flexible substrate. For example, the lower substrate 110 may be an array substrate. The display device 100 may include active devices (e.g., transistors), passive devices (e.g., capacitors, resistors) or other suitable devices disposed between the lower substrate 110 and the display medium layer LC. The upper substrate 190 may be an opposite substrate. The display device 100 may include a color filter or other suitable elements disposed between the display medium layer LC and the upper substrate 190.
For convenience of explanation, the circuits and elements of the display device 100 of the present invention are shown in fig. 2 and 3, respectively. Please refer to fig. 2. Fig. 2 is a schematic diagram illustrating a display device 100 according to some embodiments of the invention. As shown in fig. 2, the display device 100 includes a substrate 110, a driving circuit 120, and an electrode array 180. The substrate 110 includes a display region 140 and a peripheral region 160. The driving circuit 120 is disposed on the substrate 110 and located in the peripheral region 160. The electrode array 180 is disposed on the substrate 110 and located in the display region 140. The electrode array 180 includes a plurality of scan lines 104, a plurality of data lines 106, and a plurality of subpixels PX. The scan lines 104 and the data lines 106 are interlaced with each other to define a plurality of sub-pixels PX. Each sub-pixel PX includes at least one pixel electrode (not shown in fig. 2).
In some embodiments, the scan lines 104 are disposed in the metal layer M1 in fig. 1, and the data lines 106 are disposed in the metal layer M2 in fig. 1. The pixel electrode constituting the subpixel PX is disposed on the conductive thin film layer ITO2 in fig. 1. In some embodiments, the driving circuit 120 may be implemented by a Display Driver integrated chip (TDDI), but not limited thereto.
Please refer to fig. 3. Fig. 3 is a schematic diagram of a display device 100 according to some embodiments of the invention. As shown in fig. 3, the display device 100 includes a plurality of first transfer electrodes 142, a plurality of first sensing electrodes 162, and a common electrode (not shown in fig. 3). The first transmission electrode 142 is disposed on the substrate 110 and located in the display region 140. The first sensing electrode 162 is disposed on the substrate 110 and located in the peripheral region 160.
It should be noted that fig. 2 and fig. 3 are schematic diagrams for convenience of illustration only, and are not intended to represent the configuration relationship of the stack structure, and the number of components is only for illustration and is not limited thereto. Details about the arrangement among the pixel electrode, the common electrode, and the first transfer electrode 142 will be described in the following paragraphs.
Please refer to fig. 4A and 4B. Fig. 4A is a partially enlarged schematic view of a display device 100 according to some embodiments of the invention. Fig. 4B is a schematic perspective view of the display device 100 according to the embodiment of fig. 4A. In order to highlight the features of the display device 100 of the present invention, only the metal layers M1, M2, M3, the transistor TFT, the pixel electrode PXe, the common electrode Vcom, and the first transfer electrode 142 are schematically illustrated in fig. 4A and 4B. In the present embodiment, the scan line 104 is disposed on the metal layer M1, and the data line 106 is disposed on the metal layer M2. The conductive line of the first transmitting electrode 142 is disposed on the metal layer M3. The common electrode Vcom and the first transfer electrode 142 are disposed on the conductive thin film layer ITO 1. The pixel electrode is disposed on the conductive thin film layer ITO 2.
As shown in fig. 4A, the scan lines 104 disposed in the metal layer M1 and the data lines 106 disposed in the metal layer M2 are interlaced with each other to define a plurality of pixels. In some implementations, a pixel may include three subpixels PX _ R, PX _ G, PX _ B. Each subpixel PX _ R, PX _ G, PX _ B includes at least one pixel electrode PXe. In some embodiments, the metal layer M3 and the metal layer M2 overlap in the perpendicular projection direction (i.e., Z direction). The first transfer electrode 142 is disposed above the metal layers M2 and M3. Specifically, the first transfer electrodes 142 and the pixel electrodes PXe are staggered along the X direction as viewed from the vertical projection direction (i.e., the Z direction). In other words, the pixel electrode PXe is disposed between any two first transfer electrodes of the plurality of first transfer electrodes 142.
In some embodiments, one or more pixel electrodes PXe constitute one sub-pixel PX. The common electrode Vcom is disposed in the sub-pixel PX. The first transfer electrode 142 and the common electrode Vcom are electrically independent of each other. Specifically, in other words, as shown in fig. 4A, the first transfer electrode 142 and the common electrode Vcom are not in contact with each other. In practice, the common electrode Vcom can be formed by a patterning process. In some embodiments, the common electrode Vcom may include a plurality of portions not in contact with each other. The portions which are not in contact with each other can be used as electrodes in the touch unit at different time points. The details of the related matters will be described in the subsequent paragraphs.
In some embodiments, the common electrode Vcom is connected to each other through the conductive thin film layer ITO 1. The first transfer electrodes 142 are connected to each other through the metal layer M3. For example, as shown in fig. 4B, the first transmitting electrodes 142 are connected to the conducting wires disposed on the metal layer M3 through the openings N41, N42, N43, and N44, respectively.
Please refer to fig. 5A and 5B. Fig. 5A is a partially enlarged schematic view of another display device 100 according to some embodiments of the invention. Fig. 5B is a schematic perspective view of a display device according to the embodiment of fig. 5A. In fig. 5A and 5B, the elements similar to those in fig. 4A and 4B are already described in the previous paragraphs, and are not repeated herein. For convenience of explanation, only the metal layer M3_1 to which the common electrode Vcom, the first transfer electrode 142, and the first transfer electrode 142 are connected is labeled in the embodiment of fig. 5A. In the embodiment, the common electrode Vcom and the first transmission electrode 142 are disposed on the first conductive thin film layer ITO 1. As shown in fig. 5B, the common electrodes Vcom are connected to each other through the first conductive thin film layer ITO 1. The first transfer electrodes 142 are connected to each other through the third metal layer M3. For example, the first transfer electrode 142 is connected to each metal layer M3_1 through the openings N51, N52, N53, and N54, respectively.
Specifically, please refer to fig. 6A. FIG. 6A is a cross-sectional view of the display device 100 along line A5-A5' in the embodiment of FIG. 5A. In fig. 6A, the relative relationship of the substrate 110, the metal layers M1, M2, M3_1, the semiconductor layer AS, the insulating layers GI, BP1, BP2, BP3, PL, the conductive thin film layer ITO1, and ITO2 on the XZ plane is shown.
Structurally, as shown in fig. 6A, the metal layer M1 is disposed on the substrate 110. The insulating layer GI is disposed on the substrate 110 and the metal layer M1, and the insulating layer GI covers at least a portion of the metal layer M1. The semiconductor layer AS is disposed on the insulating layer GI. The metal layers M21 and M22 are disposed on the insulating layer GI, the metal layers M21 and M22 contact the semiconductor layer AS, respectively, and the metal layers M21 and M22 do not contact each other. The insulating layer BP1 is disposed on the semiconductor layer AS, the metal layers M21 and M22, and the insulating layer BP1 covers at least a portion of the conductive layer M22. The insulating layer PL is formed on the insulating layer BP1 to form a flat layer. The metal layer M3_1 is disposed on the insulating layer PL. The insulating layer BP2 is disposed on the insulating layer PL, and the insulating layer BP2 covers at least a portion of the metal layer M3_ 3. The conductive thin film layer ITO1 is located on the insulating layer BP 2. The insulation layer BP3 is disposed on the insulation layer BP2 and the conductive thin film layer ITO1, and the insulation layer BP3 covers at least a portion of the conductive thin film layer ITO 1. The conductive thin film layer ITO2 is located on the insulating layer BP 3.
Further, insulating layers BP1, PL, BP2, and BP3 are etched to form opening NPX, such that a portion of metal layer M22 is not covered by the insulating layer at opening NPX. The conductive thin film layer ITO2 may contact the metal layer M22 through the opening NPX. In addition, the insulating layer BP2 is etched to form openings N51 and N52, so that the metal layer M3_1 of each portion is not covered by the insulating layer BP2 at the openings N51 and N52, respectively. Accordingly, the thin film conductive layer G _ ITO1 as the first transfer electrode 142 may contact the metal layer M3_1 through the openings N51, N52, respectively.
Please refer to fig. 6B. FIG. 6B is a cross-sectional view of the display device of the embodiment of FIG. 5A along line B5-B5'. In fig. 6B, similar elements to those in fig. 6A are denoted by the same reference numerals, which are already described in the previous paragraphs and are not repeated herein. Structurally, as shown in fig. 6B, in the X direction, the thin film conductive layer ITO2 as the pixel electrode PXe is located between two or more thin film conductive layers G _ ITO1 as the first transfer electrode 142. In the embodiment, the pixel electrode PXe has a slit, but not limited thereto. The thin film conductive layer G _ ITO1 serving as the first transfer electrode 142 and the thin film conductive layer C _ ITO1 serving as the common electrode Vcom are disposed on the same plane or the same insulating layer without contacting each other. Each metal layer M3_1 is a connection line extending along the Y direction, and each metal layer M3_1 is a connection line for the first transmission electrode 142 at a different position.
In this way, a portion of the conductive thin film layer ITO1 serves as the common electrode Vcom, and another portion of the conductive thin film layer ITO1 serves as the first transmission electrode 142, and the two portions of the conductive thin film layer ITO1 do not contact each other. The common electrodes Vcom are connected to each other through the conductive thin film layer ITO1, and the first transfer electrodes 142 are connected to each other through the metal layer M3.
Please refer to fig. 7A and 7B. Fig. 7A is a partially enlarged schematic view of another display device 100 according to some embodiments of the invention. Fig. 7B is a schematic perspective view of the display device 100 according to the embodiment of fig. 7A. In the embodiment of FIG. 7A, similar to the embodiment shown in FIG. 5A, the common electrode Vcom and the first transmission electrode 142 are disposed on the conductive thin film layer ITO 1. The pixel electrode PXe is disposed between any two of the first transfer electrodes 142. In contrast to the embodiment shown in fig. 5A, in the present embodiment, the first transmission electrodes 142 are connected to each other through the first portion M3_1 of the metal layer, and the common electrode Vcom is connected to each other through the second portion M3_2 of the metal layer. Wherein the second portion M3_2 is different from the first portion M3_ 1. For example, as shown in fig. 7B, the first transmitting electrode 142 is connected to the first portion M3_1 of the metal layer through the openings N71 and N74. The common electrode Vcom is connected to the second portion M3_2 of the metal layer through the openings N72 and N73. In some embodiments, the common electrodes Vcom can also be connected to each other through the conductive thin film layer ITO 1.
Specifically, please refer to fig. 8A. FIG. 8A is a cross-sectional view of the display device of the embodiment of FIG. 7A along line A7-A7'. In fig. 8A, similar elements to those in fig. 6A are denoted by the same reference numerals, and their relative relationships are already described in the previous paragraphs, and are not repeated herein. Structurally, in the present embodiment, the first transfer electrode 142 is connected to the metal layer M3_1 through the opening N71, as compared to the embodiment shown in fig. 6A. The common electrode Vcom is connected to the metal layer M3_2 through the opening N72.
To further illustrate, in the vertical projection direction (i.e., Z direction), the insulating layer BP2 under the metal layer M3_1 is etched to form an opening N71, such that a portion of the metal layer M3_1 is not covered by the insulating layer BP2 at the opening N71. Accordingly, as shown in fig. 8A, the thin film conductive layer G _ ITO1 as the first transfer electrode 142 may contact the metal layer M3_1 through the opening N71. Similarly, in the vertical projection direction (i.e., Z direction), the insulating layer BP2 located under the metal layer M3_2 is etched to form an opening N72, so that a portion of the metal layer M3_2 is not covered by the insulating layer BP2 at the opening N72. Accordingly, the thin film conductive layer C _ ITO1 as the common electrode Vcom may contact the metal layer M3_2 through the opening N72.
Please refer to fig. 8B. FIG. 8B is a cross-sectional view of the display device of the embodiment of FIG. 7A along line B7-B7'. In fig. 8B, similar elements to those in fig. 6B and fig. 8A are denoted by the same reference numerals, and their relative relationships are already described in the previous paragraphs, which are not repeated herein. Structurally, in contrast to the embodiment shown in fig. 6B, in the present embodiment, the thin film conductive layer G _ ITO1 is used as the first transmission electrode 142, and the metal layer M3_1 is used as the connection wire of the first transmission electrode 142. The thin film conductive layer C _ ITO1 is used as a common electrode Vcom, and the metal layer M3_2 is used as a connection line of the common electrode Vcom. The metal layers M3_1 and M3_2 are connection wires extending along the Y direction.
In this way, a portion of the metal layer M3 is used as a connection line for the first transmission electrode 142, and another portion of the metal layer M3 is used as a connection line for the common electrode Vcom, so that the common electrode Vcom and the first transmission electrode 142 can be connected to each other through different portions of the metal layer M3 respectively under the condition of keeping electrical independence.
Please refer to fig. 9A and 9B. Fig. 9A is a partially enlarged schematic view of another display device 100 according to some embodiments of the invention. Fig. 9B is a schematic perspective view of the display device 100 according to the embodiment of fig. 9A. Compared to the embodiment shown in fig. 5A and 7A, in the embodiment of fig. 9A, the common electrode Vcom is disposed in the conductive thin film ITO1, and the first transmission electrode 142 is disposed in the metal layer G _ M3. The pixel electrode PXe is disposed between two of the plurality of first transfer electrodes 142. In addition, the common electrodes Vcom may be connected to each other through the conductive thin film layer ITO1, or through the second portion M3_2 of the metal layer. For example, as shown in fig. 9B, the common electrode Vcom is connected to the second portion M3_2 of the metal layer through the openings N92 and N93.
Specifically, please refer to fig. 10A. FIG. 10A is a cross-sectional view of the display device of the embodiment of FIG. 9A along line A9-A9'. In fig. 10A, similar elements to those in fig. 6A and fig. 8A are denoted by the same reference numerals, and their relative relationships are already described in the previous paragraphs, and are not repeated herein. Structurally, in the present embodiment, the metal layer G _ M3 is covered by the insulating layer BP2, as compared to the embodiment shown in fig. 8A. Therefore, the metal layer G _ M3 as the first transfer electrode 142 and the conductive thin film layer ITO1 are not connected to each other. In other words, the metal layer G _ M3 as the first transmission electrode 142 and the conductive thin film layer ITO1 as the common electrode Vcom are electrically independent from each other. In addition, in the vertical projection direction (i.e., Z direction), the insulating layer BP2 located below the metal layer M3_2 is etched to form an opening N92, so that a portion of the metal layer M3_2 is not covered by the insulating layer BP2 at the opening N92. Accordingly, the thin film conductive layer C _ ITO1 as the common electrode Vcom may contact the metal layer M3_2 through the opening N92.
Please refer to fig. 10B. FIG. 10B is a cross-sectional view of the display device of the embodiment of FIG. 9A along line B9-B9'. In fig. 10B, elements similar to those in fig. 6B, fig. 8B, and fig. 10A are denoted by the same reference numerals, and their relative relationships have already been described in the previous paragraphs, and are not repeated herein. Structurally, in contrast to the embodiment shown in fig. 8B, in the present embodiment, the metal layer G _ M3 is used as the first transmission electrode 142, and the metal layer G _ M3 is not overlapped by the thin film conductive layer ITO1 or ITO2 in the vertical projection direction (i.e., Z direction). In other words, the metal layer M3_1 serves as a connection wire for the first transmission electrode 142 and the first transmission electrode 142. In addition, similar to the embodiment shown in fig. 8B, the thin film conductive layer C _ ITO1 is used as the common electrode Vcom, and the metal layer M3_2 is used as the connection wire of the common electrode Vcom.
In this way, a portion of the metal layer M3 serves as the first transmission electrode 142, and the common electrode Vcom disposed on the conductive thin film ITO1 serves as a connection lead of the common electrode Vcom through another portion of the metal layer M3.
It should be noted that, in some embodiments shown in fig. 5A to fig. 10B, the common electrode Vcom in the display region 140 can be completely connected to provide the reference voltage to all the sub-pixels PX. In some other embodiments, the common electrode Vcom in the display area 140 may be divided into a plurality of electrodes, and each of the electrodes is connected to a corresponding touch conductive line for receiving a touch sensing signal to perform touch detection. The details are described below.
Please refer to fig. 11A and 11B. Fig. 11A and 11B are schematic views of another display device 100 according to some embodiments of the present invention. In the present embodiment, the electrode array 180 includes a self-contained touch electrode array. As shown in fig. 11A, the display device 100 includes a plurality of touch electrodes TP and a plurality of touch wires 108. The touch electrode TP is disposed on the substrate 110 and located in the display area 140. Each touch electrode TP is connected to the driving circuit 120 through a corresponding touch wire 108. In some embodiments, the touch electrode TP can be implemented by the common electrode Vcom data. In other words, the common electrode Vcom can be used for displaying and/or performing 2D touch detection.
Specifically, the common electrode Vcom in the display area 140 may be divided into a plurality of regions, and the common electrode Vcom in each region is connected to each other to form one touch electrode TP. In addition, the touch conductive lines 108 of the common electrode Vcom in each region can be implemented by the metal layer M3, and details thereof are already described in fig. 5A to 10B and are not repeated herein.
In some other embodiments, the electrode array 180 includes a capacitive touch electrode array. As shown in fig. 11B, the display device 100 includes one or more touch transmitting electrodes TP _ TX, a plurality of touch sensing electrodes TP _ RX, and a plurality of touch wires 108. The touch transmitting electrode TP _ TX and the touch sensing electrode TP _ RX are disposed on the substrate 110 and located in the display area 140, and the touch transmitting electrode TP _ TX and the touch sensing electrode TP _ RX are electrically independent from each other. The touch transmitting electrodes TP _ TX and the touch sensing electrodes TP _ RX are respectively connected to the driving circuit 120 through corresponding touch wires 108.
Specifically, the touch transmitting electrode TP _ TX and the touch sensing electrode TP _ RX may be implemented by the common electrode Vcom data. For example, the common electrode Vcom in the display area 140 may be divided into a plurality of regions. The common electrodes Vcom of one of the plurality of regions are connected to each other to form one touch transfer electrode TP _ TX, respectively. The common electrodes Vcom in the remaining regions are respectively connected to each other to form a plurality of touch sensing electrodes TP _ RX, respectively. In addition, the touch conductive lines 108 of the common electrode Vcom in each region can be implemented by the metal layer M3, and details thereof are already described in fig. 5A to 10B and are not repeated herein.
It is noted that the touch wires 108 shown in fig. 11A and 11B are only examples for convenience of illustration, and the size or number thereof is not intended to limit the present invention, and each touch electrode may be connected to one or more touch wires. The touch electrode TP shown in fig. 11A and the touch transmitting electrode TP _ TX and the touch sensing electrode TP _ RX shown in fig. 11B are also examples for convenience of description, and the size or number thereof is not intended to limit the present invention, and the shape or area size of the common electrode Vcom included in each area can be designed according to practical requirements. In addition, in some embodiments, the common electrode Vcom in the display region 140 may not be divided. In other words, the common electrode Vcom is used only for display.
However, when the common electrode Vcom is used for displaying only, the display device 100 can still be used with an external touch sensor (e.g., an on-cell touch sensor or an out-cell touch sensor) to achieve integration of touch and gesture. For example, in the embodiment shown in fig. 5A, the common electrode Vcom is only used for providing the reference voltage to the sub-pixel PX during displaying. Therefore, in the embodiment of fig. 5A, the display device 100 is only used for performing display and/or 3D gesture detection, but can achieve the function of detecting 2D touch by using the external touch sensor.
Please refer to fig. 12A and 12B. Fig. 12A and 12B are signal timing diagrams respectively illustrating a part of embodiments of the present invention. As shown in fig. 12A, the display device 100 performs display during the display period Dis. During the gesture sensing period Ges, when the 3D gesture sensing function is enabled, the display device 100 is used for 3D gesture detection. Specifically, during the period P1, the common electrode Vcom of the display device 100 is used to provide the reference voltage to the sub-pixel PX. In the period P2, the common electrode Vcom of the display device 100 is also used to provide the reference voltage to the sub-pixel PX, and the first transmitting electrode 142 is used to receive the gesture sensing signal and generate an electric field according to the gesture sensing signal for gesture detection. The first sensing electrode 162 is used for recognizing gestures and tracking actions according to the electric field variation.
In other words, since the first transmission electrode 142 and the common electrode Vcom are not connected to each other, the display device 100 can simultaneously display and detect the 3D gesture in the same period (e.g., the period P2).
In addition, during the touch sensing period Tou, the display device 100 is used for detecting a 2D touch. Specifically, in the third period P3, the common electrode Vcom of the display device 100 is used to receive the touch sensing signal for 2D touch detection. In some embodiments, the Tou may be configured in a Vertical Blank Interval (VBI) where display is not possible during touch sensing.
In some other embodiments, as shown in fig. 12B, when the 3D gesture sensing function is disabled, the display device 100 is used for displaying and detecting a 2D touch. Specifically, since the common electrode Vcom is also used as the touch electrode TP, the common electrode Vcom in all regions is used to provide the same reference voltage to the sub-pixel PX during the display period Dis (e.g., period P1). In the touch sensing period Tou (e.g., period P3), the common electrode Vcom in different areas is used to receive corresponding touch sensing signals for 2D touch detection. For example, in the period P3, the partial common electrode Vcom serving as the second transmitting electrode TP _ TX is used to output high-low interleaved touch sensing signals, and the partial common electrode Vcom serving as the second sensing electrode TP _ RX is used to detect capacitance change for 2D touch detection. In addition, a portion of the common electrode Vcom serving as the second sensing electrode TP _ RX may also be further divided to perform 2D touch detection according to different time sequences.
It should be noted that the features and circuits in the various drawings, embodiments and embodiments of the present invention may be combined with each other without conflict. The circuits shown in the figures are for illustration purposes only and are simplified to simplify the description and facilitate understanding, and are not meant to be limiting. In addition, each device, unit and element in the above embodiments can be implemented by various types of digital or analog circuits, can be implemented by different integrated circuit chips, or can be integrated into a single chip. The foregoing is merely exemplary and the invention is not limited thereto.
In summary, by applying the above embodiments, the first transmitting electrode 142 and the common electrode Vcom can be integrated in the in-cell panel and electrically independent from each other by the configuration and connection design, so that the display device can perform display and 3D gesture detection simultaneously. In addition, a part of the thin film conductive layer can be used as the common electrode Vcom and the touch electrode TP respectively according to different timings, so that the functions of 2D touch and 3D gesture detection can be included without increasing the panel thickness.
The present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof, and it should be understood that various changes and modifications can be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.

Claims (9)

1. A display device, comprising:
a substrate, which comprises a display area and a peripheral area; and
an electrode array disposed on the substrate and located in the display area, the electrode array comprising:
a plurality of scanning lines and a plurality of data lines which are mutually staggered to define a plurality of sub-pixels, wherein each sub-pixel at least comprises a pixel electrode;
a plurality of common electrodes respectively arranged in the sub-pixels; and
the pixel electrode is arranged between any two of the first transmission electrodes, the common electrodes are used for providing a reference voltage to the sub-pixels in the same period, and the first transmission electrodes are used for receiving a gesture sensing signal to perform gesture detection.
2. The display device of claim 1, further comprising a display medium layer, wherein the display medium layer and the substrate sequentially comprise:
a first metal layer;
a second metal layer;
a third metal layer;
a first conductive thin film layer; and
and the scanning lines are arranged on the first metal layer, and the data lines are arranged on the second metal layer.
3. The display device according to claim 2, wherein the common electrodes and the first transmission electrodes are disposed on the first conductive thin film layer.
4. The display device according to claim 3, wherein the first transmission electrodes are connected to each other through the third metal layer, and the common electrodes are connected to each other through the first conductive thin film layer.
5. The display device of claim 3, wherein the first transmission electrodes are connected to each other through a first portion of the third metal layer, and the common electrodes are connected to each other through a second portion of the third metal layer, wherein the second portion of the third metal layer is different from the first portion of the third metal layer.
6. The display device according to claim 2, wherein the common electrodes are disposed on the first conductive thin film layer, and the first transmission electrodes are disposed on the third metal layer.
7. The display device according to claim 1, wherein the common electrodes are configured to provide a reference voltage to the sub-pixels during a first period, and the common electrodes are configured to receive a touch sensing signal for touch detection during a second period different from the first period.
8. The display device according to claim 1, further comprising a first sensing electrode disposed on the substrate and in the peripheral region.
9. The display device of claim 1, wherein the common electrodes comprise a second transmitting electrode and a second sensing electrode, the second transmitting electrode and the second sensing electrode being electrically independent of each other.
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