CN110484999A - A kind of high-purity semiconductor monocrystal furnace viscose-based graphite felt and its preparation process - Google Patents
A kind of high-purity semiconductor monocrystal furnace viscose-based graphite felt and its preparation process Download PDFInfo
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- CN110484999A CN110484999A CN201910811428.7A CN201910811428A CN110484999A CN 110484999 A CN110484999 A CN 110484999A CN 201910811428 A CN201910811428 A CN 201910811428A CN 110484999 A CN110484999 A CN 110484999A
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- D—TEXTILES; PAPER
- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
- D01F9/00—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments
- D01F9/08—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments of inorganic material
- D01F9/12—Carbon filaments; Apparatus specially adapted for the manufacture thereof
- D01F9/14—Carbon filaments; Apparatus specially adapted for the manufacture thereof by decomposition of organic filaments
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Abstract
The invention discloses a kind of high-purity semiconductor monocrystal furnace viscose-based graphite felt preparation processes, comprising the following steps: a, according to size requirement will be spare after Nomex excision forming；B, solvent high purity hydrochloric acid, high-purity ammonium and water are mixed to prepare high purity water solution for standby, solvent high purity hydrochloric acid weight percent is 0%-25% in high-purity aqueous solution obtained, and high-purity ammonium weight percent is 0%-30%；C, Nomex is sent into high-purity aqueous solution soaking；D, the Nomex after immersion is dried, is sent into pre-oxidation furnace and carries out pre-impregnated with hydrogen peroxide；E, nitrogen is added in pre-oxidation furnace, carries out carbonization treatment；F, argon gas is added, the Nomex after carbonization treatment is graphitized in the environment of 2500 °, obtains high-purity semiconductor monocrystal furnace viscose-based graphite felt.The invention also discloses a kind of high-purity semiconductor monocrystal furnace viscose-based graphite felts.
Description
Technical field
The invention belongs to heat preserving and insulating material fields, and in particular to a kind of high-purity semiconductor monocrystal furnace viscose-based graphite felt and
Its preparation process.
Background technique
Graphite felt is a kind of material with heat preservation, heat insulating function, is widely used in various high-purity superhigh temperature furnaces
Insulation.Graphite felt purity common at present is not high, and impurity is more, drastically influences its using effect.Therefore, it is necessary to a
Design, solves the above problems.
Summary of the invention
The technical problems to be solved by the invention are in view of the above shortcomings of the prior art, to provide a kind of high pure semiconductor
Single crystal growing furnace viscose-based graphite felt and its preparation process, viscose-based graphite felt purity obtained can achieve 20PPM or less.
The technical scheme adopted by the invention is that: a kind of high-purity semiconductor monocrystal furnace viscose-based graphite felt preparation process, packet
Include following steps:
It a, will be spare after Nomex excision forming according to size requirement；
B, solvent high purity hydrochloric acid, high-purity ammonium and water are mixed to prepare high purity water solution for standby, in high-purity aqueous solution obtained
Solvent high purity hydrochloric acid weight percent is 0%-25%, and high-purity ammonium weight percent is 0%-30%；
C, Nomex is sent into high-purity aqueous solution soaking；
D, the Nomex after immersion is dried, is sent into pre-oxidation furnace and carries out pre-impregnated with hydrogen peroxide；
E, nitrogen is added in pre-oxidation furnace, carries out carbonization treatment；
F, argon gas is added, the Nomex after carbonization treatment is graphitized in the environment of 2500 °, obtains high pure semiconductor list
Brilliant furnace viscose-based graphite felt.
In one embodiment, in step b, solvent high purity hydrochloric acid weight percent is 17%, high-purity ammonium weight percent
Than being 15%.
In one embodiment, in step b, high-purity aqueous solution is prepared, specific as follows:
It is warming up to 50 ° of dissolution stirrings after solvent high purity hydrochloric acid, high-purity ammonium and water are mixed, high-purity aqueous solution is made.
In one embodiment, in step c, soaking time 5min-60min.
In one embodiment, in step d, pre-impregnated with hydrogen peroxide temperature is 0 ° -250 °, and heating is set during pre-impregnated with hydrogen peroxide
Curve carries out pre-impregnated with hydrogen peroxide.
In one embodiment, in step e, the nitrogen volume flow of addition is 5L/min.
In one embodiment, in step e, carbonization treatment temperature is 0 ° -1000 °, and liter is set during carbonization treatment
Warm curve carries out carbonization treatment.
In one embodiment, in step f, the argon gas volume flow of addition is 5L/min.
The invention also discloses a kind of high-purity semiconductor monocrystal furnace viscose-based graphite felts, including preparation described in any one
The anti-oxidant viscose-based graphite felt that method is prepared.
The beneficial effects of the present invention are: viscose-based graphite felt purity obtained can achieve 20PPM or less.
Specific embodiment
Below in conjunction with specific embodiment, invention is further described in detail.
Embodiment 1:
The invention discloses a kind of high-purity semiconductor monocrystal furnace viscose-based graphite felt preparation processes, which is characterized in that including
Following steps:
Step 1: will be spare after Nomex excision forming according to size requirement；
High purity water solution for standby is made Step 2: being warming up to 50 ° of dissolutions after solvent high purity hydrochloric acid and water are mixed and stirring, system
Solvent high purity hydrochloric acid weight percent is 17% in the high-purity aqueous solution obtained；
Step 3: Nomex is sent into high-purity aqueous solution soaking, soaking time 5min-60min；
Step 4: by after immersion Nomex dry, be sent into pre-oxidation furnace carry out pre-impregnated with hydrogen peroxide, pre-impregnated with hydrogen peroxide temperature be 0 °-
250 °, pre-impregnated with hydrogen peroxide sets heating curve in the process and carries out pre-impregnated with hydrogen peroxide；
Step 5: nitrogen is added in pre-oxidation furnace, carbonization treatment is carried out, the nitrogen volume flow of addition is 5L/min, carbon
Changing treatment temperature is 0 ° -1000 °, sets heating curve during carbonization treatment and carries out carbonization treatment；
Step 6: argon gas is added, the Nomex after carbonization treatment is graphitized in the environment of 2500 °, obtains high-purity half
Conductor single crystal growing furnace viscose-based graphite felt, the argon gas volume flow of addition are 5L/min.
The invention also discloses a kind of high-purity semiconductor monocrystal furnace viscose-based graphite felts, including preparation described in any one
The anti-oxidant viscose-based graphite felt that method is prepared.
Embodiment 2:
The invention discloses a kind of high-purity semiconductor monocrystal furnace viscose-based graphite felt preparation processes, which is characterized in that including
Following steps:
Step 1: will be spare after Nomex excision forming according to size requirement；
High purity water solution for standby, height obtained is made Step 2: being warming up to 50 ° of dissolutions after high-purity ammonium and water are mixed and stirring
High-purity ammonium weight percent is 15% in pure water solution；
Step 3: Nomex is sent into high-purity aqueous solution soaking, soaking time 5min-60min；
Step 4: by after immersion Nomex dry, be sent into pre-oxidation furnace carry out pre-impregnated with hydrogen peroxide, pre-impregnated with hydrogen peroxide temperature be 0 °-
250 °, pre-impregnated with hydrogen peroxide sets heating curve in the process and carries out pre-impregnated with hydrogen peroxide；
Step 5: nitrogen is added in pre-oxidation furnace, carbonization treatment is carried out, the nitrogen volume flow of addition is 5L/min, carbon
Changing treatment temperature is 0 ° -1000 °, sets heating curve during carbonization treatment and carries out carbonization treatment；
Step 6: argon gas is added, the Nomex after carbonization treatment is graphitized in the environment of 2500 °, obtains high-purity half
Conductor single crystal growing furnace viscose-based graphite felt, the argon gas volume flow of addition are 5L/min.
The invention also discloses a kind of high-purity semiconductor monocrystal furnace viscose-based graphite felts, including preparation described in any one
The anti-oxidant viscose-based graphite felt that method is prepared.
Embodiment 3:
The invention discloses a kind of high-purity semiconductor monocrystal furnace viscose-based graphite felt preparation processes, which is characterized in that including
Following steps:
Step 1: will be spare after Nomex excision forming according to size requirement；
Step 2: being warming up to 50 ° of dissolution stirrings after solvent high purity hydrochloric acid, high-purity ammonium and water are mixed is made high-purity aqueous solution
Spare, solvent high purity hydrochloric acid weight percent is 17% in high-purity aqueous solution obtained, and high-purity ammonium weight percent is 15%；
Step 3: Nomex is sent into high-purity aqueous solution soaking, soaking time 5min-60min；
Step 4: by after immersion Nomex dry, be sent into pre-oxidation furnace carry out pre-impregnated with hydrogen peroxide, pre-impregnated with hydrogen peroxide temperature be 0 °-
250 °, pre-impregnated with hydrogen peroxide sets heating curve in the process and carries out pre-impregnated with hydrogen peroxide；
Step 5: nitrogen is added in pre-oxidation furnace, carbonization treatment is carried out, the nitrogen volume flow of addition is 5L/min, carbon
Changing treatment temperature is 0 ° -1000 °, sets heating curve during carbonization treatment and carries out carbonization treatment；
Step 6: argon gas is added, the Nomex after carbonization treatment is graphitized in the environment of 2500 °, obtains high-purity half
Conductor single crystal growing furnace viscose-based graphite felt, the argon gas volume flow of addition are 5L/min.
The invention also discloses a kind of high-purity semiconductor monocrystal furnace viscose-based graphite felts, including preparation described in any one
The anti-oxidant viscose-based graphite felt that method is prepared.
Embodiment 4:
The invention discloses a kind of high-purity semiconductor monocrystal furnace viscose-based graphite felt preparation processes, which is characterized in that including
Following steps:
Step 1: will be spare after Nomex excision forming according to size requirement；
Step 2: being warming up to 50 ° of dissolution stirrings after solvent high purity hydrochloric acid, high-purity ammonium and water are mixed is made high-purity aqueous solution
Spare, solvent high purity hydrochloric acid weight percent is 25% in high-purity aqueous solution obtained, and high-purity ammonium weight percent is 30%；
Step 3: Nomex is sent into high-purity aqueous solution soaking, soaking time 5min-60min；
Step 4: by after immersion Nomex dry, be sent into pre-oxidation furnace carry out pre-impregnated with hydrogen peroxide, pre-impregnated with hydrogen peroxide temperature be 0 °-
250 °, pre-impregnated with hydrogen peroxide sets heating curve in the process and carries out pre-impregnated with hydrogen peroxide；
Step 5: nitrogen is added in pre-oxidation furnace, carbonization treatment is carried out, the nitrogen volume flow of addition is 5L/min, carbon
Changing treatment temperature is 0 ° -1000 °, sets heating curve during carbonization treatment and carries out carbonization treatment；
Step 6: argon gas is added, the Nomex after carbonization treatment is graphitized in the environment of 2500 °, obtains high-purity half
Conductor single crystal growing furnace viscose-based graphite felt, the argon gas volume flow of addition are 5L/min.
The invention also discloses a kind of high-purity semiconductor monocrystal furnace viscose-based graphite felts, including preparation described in any one
The anti-oxidant viscose-based graphite felt that method is prepared.
The viscose-based graphite felt purity as made from aforementioned four embodiment can achieve 20PPM or less.In practical operation
During, solvent high purity hydrochloric acid weight percent and high-purity ammonium weight percent are not limited to aforementioned proportion in high-purity aqueous solution.
A specific embodiment of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
Limitations on the scope of the patent of the present invention therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention
Protect range.
Claims (9)
1. a kind of high-purity semiconductor monocrystal furnace viscose-based graphite felt preparation process, which comprises the following steps:
It a, will be spare after Nomex excision forming according to size requirement；
B, solvent high purity hydrochloric acid, high-purity ammonium and water are mixed to prepare high purity water solution for standby, solvent in high-purity aqueous solution obtained
High purity hydrochloric acid weight percent is 0%-25%, and high-purity ammonium weight percent is 0%-30%；
C, Nomex is sent into high-purity aqueous solution soaking；
D, the Nomex after immersion is dried, is sent into pre-oxidation furnace and carries out pre-impregnated with hydrogen peroxide；
E, nitrogen is added in pre-oxidation furnace, carries out carbonization treatment；
F, argon gas is added, the Nomex after carbonization treatment is graphitized in the environment of 2500 °, obtains high-purity semiconductor monocrystal furnace
Viscose-based graphite felt.
2. a kind of high-purity semiconductor monocrystal furnace viscose-based graphite felt preparation process according to claim 1, which is characterized in that
In step b, solvent high purity hydrochloric acid weight percent is 17%, and high-purity ammonium weight percent is 15%.
3. a kind of high-purity semiconductor monocrystal furnace viscose-based graphite felt preparation process according to claim 1, which is characterized in that
In step b, high-purity aqueous solution is prepared, specific as follows:
It is warming up to 50 ° of dissolution stirrings after solvent high purity hydrochloric acid, high-purity ammonium and water are mixed, high-purity aqueous solution is made.
4. a kind of high-purity semiconductor monocrystal furnace viscose-based graphite felt preparation process according to claim 1, which is characterized in that
In step c, soaking time 5min-60min.
5. a kind of high-purity semiconductor monocrystal furnace viscose-based graphite felt preparation process according to claim 1, which is characterized in that
In step d, pre-impregnated with hydrogen peroxide temperature is 0 ° -250 °, sets heating curve during pre-impregnated with hydrogen peroxide and carries out pre-impregnated with hydrogen peroxide.
6. a kind of high-purity semiconductor monocrystal furnace viscose-based graphite felt preparation process according to claim 1, which is characterized in that
In step e, the nitrogen volume flow of addition is 5L/min.
7. a kind of high-purity semiconductor monocrystal furnace viscose-based graphite felt preparation process according to claim 1, which is characterized in that
In step e, carbonization treatment temperature is 0 ° -1000 °, sets heating curve during carbonization treatment and carries out carbonization treatment.
8. a kind of high-purity semiconductor monocrystal furnace viscose-based graphite felt preparation process according to claim 1, which is characterized in that
In step f, the argon gas volume flow of addition is 5L/min.
9. a kind of high-purity semiconductor monocrystal furnace viscose-based graphite felt, which is characterized in that including such as claim 1-9 any one institute
The anti-oxidant viscose-based graphite felt that the preparation method stated is prepared.
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| CN201910811428.7A CN110484999A (en) | 2019-08-30 | 2019-08-30 | A kind of high-purity semiconductor monocrystal furnace viscose-based graphite felt and its preparation process |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115182154A (en) * | 2022-07-22 | 2022-10-14 | 江苏米格新材料有限公司 | Ultra-pure viscose-based graphite felt and preparation method and application thereof |
| CN116446137A (en) * | 2023-04-23 | 2023-07-18 | 安徽腾云新材料科技有限公司 | Preparation process of viscose-based graphite felt |
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| JPH04126826A (en) * | 1990-09-19 | 1992-04-27 | Nippon Steel Corp | Production of pitch-based active carbon fiber |
| CN102031638A (en) * | 2009-09-26 | 2011-04-27 | 甘肃郝氏炭纤维有限公司 | Method for manufacturing viscose-based graphite felt |
| CN107285795A (en) * | 2016-03-31 | 2017-10-24 | 辽源市恒发碳纤维有限公司 | A kind of preparation method of high temperature insulation quilt |
| CN108565470A (en) * | 2018-04-17 | 2018-09-21 | 大连隆田科技有限公司 | A kind of preparation method of flow battery graphite felt |
-
2019
- 2019-08-30 CN CN201910811428.7A patent/CN110484999A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04126826A (en) * | 1990-09-19 | 1992-04-27 | Nippon Steel Corp | Production of pitch-based active carbon fiber |
| CN102031638A (en) * | 2009-09-26 | 2011-04-27 | 甘肃郝氏炭纤维有限公司 | Method for manufacturing viscose-based graphite felt |
| CN107285795A (en) * | 2016-03-31 | 2017-10-24 | 辽源市恒发碳纤维有限公司 | A kind of preparation method of high temperature insulation quilt |
| CN108565470A (en) * | 2018-04-17 | 2018-09-21 | 大连隆田科技有限公司 | A kind of preparation method of flow battery graphite felt |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115182154A (en) * | 2022-07-22 | 2022-10-14 | 江苏米格新材料有限公司 | Ultra-pure viscose-based graphite felt and preparation method and application thereof |
| CN115182154B (en) * | 2022-07-22 | 2024-01-26 | 江苏米格新材料股份有限公司 | Ultra-high-purity viscose-based graphite felt and preparation method and application thereof |
| CN116446137A (en) * | 2023-04-23 | 2023-07-18 | 安徽腾云新材料科技有限公司 | Preparation process of viscose-based graphite felt |
| CN116446137B (en) * | 2023-04-23 | 2023-09-12 | 安徽腾云新材料科技有限公司 | Preparation process of viscose-based graphite felt |
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