CN114345664B - Graphene surface-coated high-conductivity copper wire and preparation method thereof - Google Patents
Graphene surface-coated high-conductivity copper wire and preparation method thereof Download PDFInfo
- Publication number
- CN114345664B CN114345664B CN202111656396.1A CN202111656396A CN114345664B CN 114345664 B CN114345664 B CN 114345664B CN 202111656396 A CN202111656396 A CN 202111656396A CN 114345664 B CN114345664 B CN 114345664B
- Authority
- CN
- China
- Prior art keywords
- copper wire
- graphene
- graphene quantum
- coated
- quantum dots
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Carbon And Carbon Compounds (AREA)
Abstract
The invention provides a graphene surface-coated high-conductivity copper wire and a preparation method thereof, comprising the following steps: taking graphene quantum dot solution; taking a copper wire; placing the copper wire in steam of the graphene quantum dot solution, so that the graphene quantum dots are evaporated on the copper wire; and annealing the copper wire with the graphene quantum dots evaporated on the surface in a protective atmosphere to obtain the high-conductivity copper wire with the graphene surface coated. The invention reduces energy waste and makes industrialization possible.
Description
Technical Field
The invention relates to a high-conductivity copper wire, in particular to a preparation method of a graphene surface-coated high-conductivity copper wire.
Background
The carrier mobility of the graphene at normal temperature can reach 15000m 2 /(Vs), which is better than all conventional metals. Therefore, the use of graphene to complex with metals (especially copper, aluminum) to improve the conductivity of metals has been a long-standing goal in the academia and industry.
According to statistics of the national statistical bureau, the total annual consumption of China is about 7.15 trillion degrees, and the loss of power transmission and distribution is up to 3351.7 billions. Under the development strategy of energy conservation and emission reduction, the main strategy for avoiding electric loss is to adopt a conductive material with higher electric conductivity. Copper wires are widely used in the fields of power generation, power transmission and electricity utilization. The annual output of copper processing materials in China in 2018 reaches 1781 ten thousand tons, wherein the output of copper wires is 44.6 percent with the largest proportion. Since copper is currently the most dominant conductive material, how to improve the conductivity of copper at lower cost is a constant concern in the industry.
There are generally two ways to combine graphene and copper. One is to mix graphene powder with copper for processing, and the graphene is uniformly distributed in the copper. For example, in patent CN202110851980.6, yang Zhenyu proposes a graphene copper wire and a method for preparing the same, in which a few-layer graphene oxide powder and an oxygen-free copper powder are mixed and sintered at low temperature and pressure, and then an auxiliary material is added for vacuum melting to obtain a graphene copper alloy with a volume content of 99.99% or more, and then the graphene copper wire is obtained by annealing. The heat conduction system can reach 500-600W/m.K, and the volume resistivity is reduced by 5-20%. And the other is to grow graphene on the high-purity copper foil, wherein the graphene is mainly distributed on the surface of the copper. For example, in adv.funct.mater.2019,29,1806792 paper, the Zhang Di team of Shanghai university of transportation obtained graphene copper foil by means of Chemical Vapor Deposition (CVD), after hot pressing into ingots, a graphene copper product with a conductivity of up to 117% IACS was obtained.
Both of these require high temperatures approaching 1000 degrees. The former uses graphene oxide, so that the dispersion in smelting is very difficult; the process is complex, and the line of the used copper wire raw material greatly changes (from 8 or 2.6mm to 0.015-0.6 mm) in the processing process. The latter uses high vacuum condition, uses methane as carbon source, and only uses copper foil as raw material, i.e. the product can only be sheet copper product. The industrialization difficulty of the two is relatively high.
Disclosure of Invention
In view of the above problems, the present invention provides a method for preparing a graphene surface-coated highly conductive copper wire, comprising:
taking graphene quantum dot solution;
taking a copper wire;
arranging graphene quantum dots on the surface of a copper wire; and
and annealing the copper wire with the graphene quantum dots on the surface in a protective atmosphere to obtain the high-conductivity copper wire coated with the graphene surface.
According to one aspect of the invention, the concentration of the graphene quantum dot solution is 0.001-1 wt%. When the concentration of the graphene quantum dot solution is too high, quantum dots can be wasted, and the quantum dots are not easy to achieve high concentration; the concentration is too low, and the coverage of the graphene quantum dots on the copper wires is insufficient. In practice, the concentration of the graphene quantum dot solution is 0.001-1 wt% which can meet the purpose of the invention, and meanwhile, the concentration of the graphene quantum dot solution is 0.01-0.1 wt% which is found in the research, the combination of the graphene quantum dots evaporated on the surface of the copper wire and the copper wire is more compact, and the surface assembled graphene after annealing treatment is arranged more orderly, so that the graphene coating layer with high density is formed. As an optimal scheme, the concentration of the graphene quantum dot solution is 0.05wt%.
Preferably, the solvent of the graphene quantum dot solution is miscible with water and has a boiling point of more than 90 ℃;
preferably, the solvent of the graphene quantum dot solution is an organic solvent with a dielectric constant of 30-50 or an organic-inorganic mixed solvent with a dielectric constant of 30-50, and the reaction temperature is 120-180 ℃, which means that the pressure is too high when the boiling point is too low, and the low-boiling point solvent is mainly alcohol and is not a good solvent of the graphene quantum dot, so that the invention adopts the organic solvent with the dielectric constant of 30-50.
Preferably, the solvent of the graphene quantum dot solution is selected from one or more than two mixed solvents of water, DMF or NMP; further preferably, the solvent of the graphene quantum dot solution is a mixture of water and DMF. Further preferably, the solvent of the graphene quantum dot solution is a mixture of water and DMF according to a mass ratio of (1-10): 1. Further preferably, the solvent of the graphene quantum dot solution is a mixture of water and DMF according to a mass ratio of 4:1.
DMF is a good solvent for dissolving graphene quantum dots, is miscible with water and has a low boiling point, can increase the concentration of the graphene quantum dots in steam, and is beneficial to the deposition of the graphene quantum dots on copper wires. Although through intensive analysis and repeated research, the method has the advantages that the solvent which adopts the mixture of water and DMF as the solvent of the graphene quantum dots can be used for better realizing the deposition of the graphene quantum dots on the copper wires, and the adhesion of the graphene quantum dots and the surfaces of the copper wires is facilitated. However, in the application of the graphene quantum dots as copper wire coating materials, because copper wires are finer, the copper wires are mixed and clustered together in actual production, so that the deposition of the graphene quantum dots is often uneven, and therefore, in order to uniformly and compactly deposit the quantum dots on the surface of the copper wires, the applicant finally finds the proportional relationship between water and DMF as a solvent to solve the problem. When the solvent of the graphene quantum dot solution is a mixture of water and DMF according to the mass ratio of (1-10): 1, the graphene quantum dots deposited on the surface of the staggered and interwoven copper wire are uniform, and when the mass ratio of water to DMF is 4:1, the effect is optimal.
According to one aspect of the invention, the wire diameter of the copper wire is 0.015-1 mm; preferably 0.02 to 0.5mm. When the copper wire is below 500 mu m, the conductivity of the copper wire after the graphene coating is treated is obviously improved; and the conductivity of the copper wire after the graphene coating is processed is not obviously improved more than 500 mu m. Preferably, the purity of the copper wire is above 99.9%.
According to one aspect of the invention, the implementation method for arranging the graphene quantum dots on the surface of the copper wire adopts a vapor deposition and boiling mode;
the evaporation mode is as follows: placing the copper wire in steam of the graphene quantum dot solution, so that the graphene quantum dots are evaporated on the copper wire;
the cooking mode is as follows: and placing the copper wire in the graphene quantum dot solution to enable the graphene quantum dots to be attached to the copper wire.
Preferably, in the evaporation or boiling mode, the evaporation is performed by heating the graphene quantum dot solution to 120-180 ℃ and then keeping the temperature for 1-6 hours; the method comprises the steps of carrying out a first treatment on the surface of the Preferably, after heating to 140 ℃ for 2 hours; macroscopically, the copper wire turns black due to the deposition of graphene quantum dots on the copper wire; the copper surface may be microscopically coated with carbon. The implementation method for arranging the graphene quantum dots on the surface of the copper wire has two methods, namely evaporation and boiling, and the two methods can achieve the purpose of depositing the graphene quantum dots on the copper wire, but the graphene quantum dots deposited on the surface of the copper wire obtained by adopting an evaporation mode are more uniformly distributed.
Preferably, the heating is achieved by:
the hydrothermal kettle is used as a reaction container, and is placed in an oven for heating. This is advantageous for high temperature and high pressure reactions, especially those with a maximum pressure of more than 10 atmospheres.
According to one aspect of the invention, the copper wire is naturally cooled after evaporation, taken out, washed and naturally dried.
According to one aspect of the invention, the protective atmosphere is a mixed gas of nitrogen and hydrogen or a mixed gas of argon and hydrogen; preferably, the proportion of hydrogen is 1-10% by volume, further preferably, the protective atmosphere is 95% nitrogen or argon and 5% hydrogen.
According to one aspect of the invention, the annealing treatment is carried out by heating the copper wire with the graphene quantum dots evaporated on the surface to 300-900 ℃ under a protective atmosphere and keeping the copper wire for 30-300 min, and then cooling the copper wire, so that the graphene quantum dots (which are multi-layered on the surface of the copper wire) evaporated on the copper wire are subjected to further reaction under the heating condition, are mutually connected, and macroscopically look darker; preferably, the temperature is heated to 400℃and maintained for 60 to 600 minutes. According to the invention, self-assembly arrangement of graphene quantum dots on the surface of a copper wire can be realized only by the annealing temperature of 300-900 ℃, and researches show that the temperature of 400 ℃ is kept for 120min, so that the annealing cost is lowest and the effect is very good.
The invention also provides a high-conductivity copper wire coated on the surface of the graphene, which comprises a copper wire and the graphene coated on the surface of the copper wire.
According to one aspect of the invention, the volume fraction of the graphene on the copper wire is 0.01-0.2%.
According to one aspect of the invention, the conductivity of the graphene surface-coated high-conductivity copper wire is 105-110% IACS.
According to the invention, high-purity copper wires are used as raw materials, and graphene quantum dots are mutually connected into graphene through evaporating graphene quantum dots on the surfaces of the copper wires and annealing treatment at a lower temperature. Compared with the prior art, the graphene quantum dots are used as raw materials, are compounded with copper under the low-temperature condition, and are annealed to obtain the graphene copper wire with the wire diameter change of less than 5%. The process remarkably reduces energy waste and makes industrialization possible. The surface of the obtained graphene copper wire is black, and the conductivity is 105-110% IACS. As shown in figure 1, the Raman spectrum of the product provided by the invention has an obvious graphene signal. As shown in the physical diagram of the product shown in fig. 2, the surface is black, which indicates that the copper wire surface has a dense graphene layer.
The inventors of the present invention found that the thickness of the graphene coating and the wire diameter of the copper wire have less influence on the conductivity when the study of the preferable influence factors was further analyzed by the effect. The reasons why graphene enhances the conductivity of copper wires are presumed to be three: 1, the defects on the surface of a copper wire are replaced by graphene, so that scattering centers in the electron or phonon conduction process caused by the surface defects are reduced or even eliminated; 2, graphene and copper are tightly combined, and there is a possibility that a phenomenon that 2p orbitals of graphene and 4p orbitals of copper are partially coupled (Enhanced electrical and thermal conduction in graphene-encapsulated copper nanowires [ J ]. Nano Letters,2015,15 (3): 2024.); and 3, the graphene has skin effect during current transmission, has excellent interception capability, and is used for carrying more electron transmission.
The invention has two pioneering inventions: 1) The method comprises the steps of compounding graphene quantum dots with copper by taking the most sub-dots of graphene as a raw material and utilizing a high-temperature high-pressure principle of a hydrothermal kettle; 2) And (3) carrying out low-temperature annealing to assemble the graphene quantum dots into graphene on the copper wires. The process design is ingenious, the process conditions are simple and controllable compared with the prior art, the graphene coating of the obtained product is uniform, the amount of the used graphene quantum dots is very small (the volume fraction of the graphene on the copper wire is only 0.01-0.2%), the outstanding conductive effect of the product is ensured, and the cost is low.
Drawings
Fig. 1 is a raman spectrum of a graphene surface coated highly conductive copper wire of the present invention;
fig. 2 is a photograph of a high-conductivity copper wire coated on the surface of graphene according to the present invention.
Detailed Description
In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of one or more embodiments. It may be evident, however, that such embodiment(s) may be practiced without these specific details. In other instances, well-known structures and devices are shown in block diagram form in order to facilitate describing one or more embodiments.
Various embodiments according to the present invention will be described in detail below with reference to the accompanying drawings.
In the following examples: the resistance and conductivity were measured using national standard GB/T3048.4-2007.
Example 1:
a high purity (99.9%) copper wire with a wire diameter of 200 μm was selected and placed into a hydrothermal kettle containing a 0.05wt% solution of graphene quantum dots (the solvent being a mixture of water and DMF in a mass ratio of 4:1). Heating to 140 deg.c in an oven, maintaining for 2 hr, cooling naturally, taking out copper wire, washing with pure water and air drying.
And heating the copper wire obtained in the last step to 400 ℃ in a nitrogen-hydrogen mixed gas (95% nitrogen and 5% hydrogen) and keeping the temperature for 120min, and cooling to obtain the high-conductivity copper wire coated on the surface of the graphene, wherein the test data are shown in the following table 1.
Example 2
A high purity (99.9%) copper wire with a wire diameter of 200 μm was selected and placed into a hydrothermal kettle containing a 0.05wt% solution of graphene quantum dots (the solvent being a mixture of water and NMP in a mass ratio of 5:1). Heating to 120 deg.c in an oven, maintaining for 4 hr, cooling naturally, taking out copper wire, washing with pure water and air drying.
And heating the copper wire obtained in the last step to 500 ℃ in a nitrogen-hydrogen mixed gas (98% nitrogen+2% hydrogen) and keeping the temperature for 300min, and cooling to obtain the high-conductivity copper wire coated on the surface of the graphene, wherein the test data are shown in the following table 1.
Example 3
A high purity (99.9%) copper wire with a wire diameter of 300 μm was selected and placed into a hydrothermal kettle containing a 0.08wt% graphene quantum dot solution (solvent being a mixture of water and DMF in a mass ratio of 1:1). Heating to 140 deg.c in an oven, maintaining for 2 hr, cooling naturally, taking out copper wire, washing with pure water and air drying.
The copper wire obtained in the last step is heated to 600 ℃ in a nitrogen-hydrogen mixed gas (95% nitrogen+5% hydrogen) and kept for 30min, and the high-conductivity copper wire with the graphene surface coated is obtained after cooling, and the test data are shown in the following table 1.
Example 4
A high purity (99.9%) copper wire with a wire diameter of 300 μm was selected and placed into a hydrothermal kettle containing a 0.05wt% graphene quantum dot solution (solvent being a mixture of water and NMP in a mass ratio of 2:1). Heating to 150 ℃ in an oven, keeping for 2 hours, naturally cooling, taking out the copper wire, cleaning with pure water, and airing.
And heating the copper wire obtained in the last step to 500 ℃ in a nitrogen-hydrogen mixed gas (98% nitrogen+2% hydrogen) and keeping the temperature for 120min, and cooling to obtain the high-conductivity copper wire coated on the surface of the graphene, wherein the test data are shown in the following table 1.
Example 5
A high purity (99.9%) copper wire with a wire diameter of 100 μm was selected and placed into a hydrothermal kettle containing a solution of graphene quantum dots 0.01wt% (the solvent was deionized water). Heating to 180 deg.c in an oven for 1 hr, cooling naturally, taking out copper wire, washing with pure water and air drying.
And heating the copper wire obtained in the last step to 300 ℃ in a nitrogen-hydrogen mixed gas (95% nitrogen and 5% hydrogen) and keeping the temperature for 120min, and cooling to obtain the high-conductivity copper wire coated on the surface of the graphene, wherein the test data are shown in the following table 1.
Example 6
A high purity (99.9%) copper wire with a wire diameter of 50 μm was selected and placed into a hydrothermal kettle containing a 0.01wt% solution of graphene quantum dots (the solvent being a mixture of water and DMF in a mass ratio of 1:1). Heating to 160 ℃ in an oven, keeping for 5 hours, naturally cooling, taking out the copper wire, cleaning with pure water, and airing.
And heating the copper wire obtained in the last step to 400 ℃ in a nitrogen-hydrogen mixed gas (90% nitrogen+10% hydrogen) and keeping the temperature for 60 minutes, and cooling to obtain the high-conductivity copper wire coated on the surface of the graphene, wherein the test data are shown in the following table 1.
Example 7
A high purity (99.9%) copper wire with a wire diameter of 500 μm was selected and placed into a hydrothermal kettle containing a 0.1wt% solution of graphene quantum dots (a mixture of solvent water and NMP in a mass ratio of 1:1). Heating to 130 ℃ in an oven, keeping for 4 hours, naturally cooling, taking out the copper wire, cleaning with pure water, and airing.
And heating the copper wire obtained in the last step to 900 ℃ in a nitrogen-hydrogen mixed gas (95% nitrogen and 5% hydrogen) and keeping the temperature for 60 minutes, and cooling to obtain the high-conductivity copper wire coated on the surface of the graphene, wherein the test data are shown in the following table 1.
The test results of the graphene surface-coated highly conductive copper wire of each of the above examples are shown in table 1 below:
TABLE 1
According to the invention, high-purity copper wires are used as raw materials, graphene quantum dots are evaporated on the surfaces of the copper wires at 120-180 ℃, and then the graphene quantum dots are mutually connected into graphene by annealing at 300-900 ℃ in nitrogen-hydrogen atmosphere. Compared with the prior art, the method takes the graphene quantum dots as raw materials, and combines the graphene quantum dots with copper under the low-temperature condition, and then the graphene copper wire is obtained through annealing. The process remarkably reduces energy waste and makes industrialization possible. The surface of the obtained graphene copper wire is black, and the conductivity is 105-110% IACS.
According to the invention, the graphene coating is formed on the surface of the copper wire through graphene. The specific technical process is that graphene quantum dots in a solution are evaporated on the surface of a copper wire in a solvent volatilization process, and then the graphene quantum dots are mutually connected into graphene by high-temperature annealing. The method is characterized in that graphene quantum dots with good solubility are used, trace graphene is brought into a gas phase by utilizing a solvent volatilization process to be attached to the surface of a copper wire, and then the graphene quantum dots are mutually bonded and connected into graphene by annealing, so that the obtained graphene copper wire conductive wire is superior to a high-purity copper wire, and has wide application in the aspects of motors, wireless charging coils, wires and cables and the like.
Finally, it should be noted that: the foregoing description is only a preferred embodiment of the present invention, and the present invention is not limited thereto, but it is to be understood that modifications and equivalents of some of the technical features described in the foregoing embodiments may be made by those skilled in the art, although the present invention has been described in detail with reference to the foregoing embodiments. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (12)
1. The preparation method of the graphene surface coated high-conductivity copper wire is characterized by comprising the following steps of:
taking graphene quantum dot solution;
taking a copper wire;
arranging graphene quantum dots on the surface of a copper wire;
and
annealing the copper wire with the graphene quantum dots on the surface in a protective atmosphere to obtain a high-conductivity copper wire coated on the surface of graphene;
the implementation method for arranging the graphene quantum dots on the surface of the copper wire adopts an evaporation mode, and the evaporation mode is as follows: placing the copper wire in steam of the graphene quantum dot solution, so that the graphene quantum dots are evaporated on the copper wire;
the concentration of the graphene quantum dot solution is 0.0-1 wt%; the solvent of the graphene quantum dot solution is a mixture of water and DMF (dimethyl formamide) according to the mass ratio of (1-10): 1;
in the evaporation mode, the graphene quantum dot solution is heated to 120-180 ℃ and then kept for 1-6 h;
the heating is achieved by the following method: a hydrothermal kettle is adopted as a reaction container;
the annealing treatment is carried out by heating copper wires with graphene quantum dots evaporated on the surfaces to 300-900 ℃ under protective atmosphere, keeping for 30-300 min, and cooling.
2. The method for preparing a graphene surface-coated highly-conductive copper wire according to claim 1, wherein the concentration of the graphene quantum dot solution is 0.0-0.1 wt%.
3. The preparation method of the graphene surface-coated high-conductivity copper wire according to claim 1, wherein the solvent of the graphene quantum dot solution is a mixture of water and DMF according to a mass ratio of 4:1.
4. The method for preparing a graphene surface-coated highly-conductive copper wire according to claim 1, wherein the graphene quantum dot solution is heated to 140 ℃ and then kept for 2 hours.
5. The method for preparing a graphene surface-coated highly-conductive copper wire according to claim 1, wherein the wire diameter of the copper wire is 0.015-1 mm.
6. The method for preparing a graphene-surface-coated highly-conductive copper wire according to claim 5, wherein the wire diameter of the copper wire is 0.02-0.5 mm.
7. The method for preparing a graphene surface-coated highly-conductive copper wire according to claim 1, wherein the purity of the copper wire is 99.9% or more.
8. The method for preparing a highly conductive copper wire coated on a graphene surface according to claim 1, wherein the copper wire is naturally cooled after evaporation, taken out, washed and naturally dried.
9. The method for preparing the graphene surface-coated high-conductivity copper wire according to claim 1, wherein the protective atmosphere is a mixed gas of nitrogen and hydrogen or a mixed gas of argon and hydrogen.
10. The method for preparing a graphene surface-coated highly conductive copper wire according to claim 9, wherein the hydrogen gas is 1-10% by volume.
11. The method for preparing a graphene-surface-coated highly-conductive copper wire according to claim 10, wherein the protective atmosphere is 95% nitrogen or argon and 5% hydrogen.
12. The method for preparing a graphene surface-coated highly-conductive copper wire according to claim 11, wherein the annealing treatment is performed by heating a copper wire with graphene quantum dots deposited on the surface to 400 ℃ under a protective atmosphere and maintaining the copper wire for 120min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111656396.1A CN114345664B (en) | 2021-12-30 | 2021-12-30 | Graphene surface-coated high-conductivity copper wire and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111656396.1A CN114345664B (en) | 2021-12-30 | 2021-12-30 | Graphene surface-coated high-conductivity copper wire and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114345664A CN114345664A (en) | 2022-04-15 |
| CN114345664B true CN114345664B (en) | 2023-06-13 |
Family
ID=81104698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111656396.1A Active CN114345664B (en) | 2021-12-30 | 2021-12-30 | Graphene surface-coated high-conductivity copper wire and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114345664B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114958037B (en) * | 2022-05-30 | 2023-09-05 | 湖南湘投轻材科技股份有限公司 | Preparation method of carbon quantum dot coated carbonaceous material, composite material and application |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130140058A1 (en) * | 2011-12-05 | 2013-06-06 | Ki II Kim | Graphene electrical wire and a method for manufacturing thereof |
| CN106548831B (en) * | 2016-12-10 | 2017-09-15 | 西北有色金属研究院 | A kind of preparation method of graphene copper composite wire material |
| CN109003742B (en) * | 2018-07-18 | 2020-03-24 | 上海电机学院 | Processing equipment and process for metal-based graphene composite wire |
| CN110828024B (en) * | 2019-11-20 | 2020-08-04 | 北京清大际光科技发展有限公司 | Conducting wire prepared from conductive graphene coated copper and preparation method and application thereof |
| CN111276295A (en) * | 2020-02-20 | 2020-06-12 | 上海超碳石墨烯产业技术有限公司 | Preparation method of graphene primary coated copper wire |
-
2021
- 2021-12-30 CN CN202111656396.1A patent/CN114345664B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN114345664A (en) | 2022-04-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108573763B (en) | Preparation method of wire and cable conductor, graphene-coated metal powder and conductor | |
| CN106898432A (en) | A kind of preparation method of Graphene yttrium niobium copper superconductor | |
| CN110148760B (en) | Porous carbon-carbon nanotube composite material and preparation method and application thereof | |
| SK282609B6 (en) | Method for heat treatment of carbonaceous materials | |
| CN114345664B (en) | Graphene surface-coated high-conductivity copper wire and preparation method thereof | |
| CN109082050B (en) | Preparation method of CQDs @ PVP/PVDF composite dielectric film | |
| CN109536771A (en) | A kind of preparation method of dispersion strengthened copper oxygen sheet alloy | |
| CN104386676A (en) | Preparation method of graphene | |
| CN106115802B (en) | A kind of preparation method of graphene composite material | |
| CN110148721A (en) | A kind of nitrogen-doped graphene and nitrogen-doped nanometer tin dioxide composite material and its preparation method and application | |
| CN107416820A (en) | A kind of N, O, the preparation method of the netted graphitized carbon nano material of S doping | |
| CN104773725A (en) | Method for preparing graphene by using low-temperature plasmas | |
| CN111154994B (en) | Graphene-aluminum composite material and preparation method thereof | |
| CN107201535B (en) | A method of graphene/copper composite material is prepared using aerobic sintering | |
| CN106315569B (en) | A kind of preparation method of graphene | |
| CN113044840B (en) | Active carbon loaded molybdenum and nitrogen double-doped carbon nano-sheet array composite material and preparation method and application thereof | |
| CN111204741B (en) | Preparation method of three-dimensional graphene/carbon nanotube cross-linked composite material | |
| CN109264705A (en) | A kind of preparation method and three-dimensional grapheme-copper composite cable of three-dimensional grapheme film | |
| CN103628082A (en) | Graphene preparation method | |
| Hong-Liang et al. | Enhancement of critical current density in graphite doped MgB2 wires | |
| CN106782897A (en) | A kind of method that high-temperature sintering process prepares yttrium niobium copper superconductor | |
| KR20150117869A (en) | Sugar Graphite fine powder, sugar graphene manufacturing method | |
| CN1834309A (en) | Method of synthetizing two kinds of different shaped silicon carbid nano wire | |
| CN113173616A (en) | Three-dimensional integrated photo-thermal conversion material and preparation method thereof | |
| CN106270497B (en) | A kind of preparation method of high thermal conductivity alloy-graphene composite material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |