CN110484868A - Ceramic substrate with Logo and preparation method thereof with include its ceramic cover plate and electronic equipment - Google Patents
Ceramic substrate with Logo and preparation method thereof with include its ceramic cover plate and electronic equipment Download PDFInfo
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- CN110484868A CN110484868A CN201810465056.2A CN201810465056A CN110484868A CN 110484868 A CN110484868 A CN 110484868A CN 201810465056 A CN201810465056 A CN 201810465056A CN 110484868 A CN110484868 A CN 110484868A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0015—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterized by the colour of the layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0652—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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Abstract
It is related to ceramic panel technical field with comprising its ceramic cover plate and electronic equipment with Logo and preparation method thereof the present invention provides a kind of ceramic substrate.The ceramic substrate includes chromium metal layer for contacting with ceramic substrate and the optical layer for being set to the chromium layer on surface of metal with Logo, and the optical layer is the combination of silicon oxide layer, silicon layer and silicon nitride layer.Can be alleviated using ceramic substrate Logo lack in the prior art it is a kind of have can colored Logo in conjunction with ceramic matrix the technical issues of, reach different clients to the technical effect of Logo personalized color demand.
Description
Technical field
The present invention relates to ceramic panel technical field, more particularly, to a kind of ceramic substrate with Logo and preparation method thereof with
Include its ceramic cover plate and electronic equipment.
Background technique
With universal, appearance requirement of the consumer to electronic product of smart electronics product such as mobile phone, computer, TV etc.
It is higher and higher.It takes the mobile phone as an example, the cell phone rear cover of non-metallic material has become most electronic product manufacturers middle and high end machine at present
One of the design direction that type is pursued, the coming years, smart phone rear cover will gradually from metal material become with ceramics, glass,
Jewel is the non-metallic material of main representative.
Since ceramics belong to transparent materials, unlike glass can be in product back side silk-screen different colours logo, then by just
Face shows different colours to reach client to the individual demand of logo, thus causes the Logo on current ceramic cover plate most
For metal patterns such as single black or white, there is no the Logo of personalized multicolour pattern.
In view of this, the present invention is specifically proposed.
Summary of the invention
The first object of the present invention is to provide a kind of ceramic substrate Logo, lacks a kind of tool in the prior art to alleviate
Have can colored Logo in conjunction with ceramic matrix the technical issues of.
The second object of the present invention is to provide the preparation method of ceramic substrate Logo a kind of, can be using this method
It is colored Logo that ceramic base plate surface, which is when silver color and side are observed when a kind of front observation is prepared,.
The third object of the present invention is to provide a kind of ceramic cover plate, and the fourth object of the present invention is to provide a kind of electronics
Equipment, to meet requirement of the different clients to Logo personalization.
In order to realize above-mentioned purpose of the invention, the following technical scheme is adopted:
A kind of ceramic substrate Logo including the chromium metal layer for contacting with ceramic substrate and is set to the chromium metal
The optical layer of layer surface, the optical layer are the combination of silicon oxide layer, silicon layer and silicon nitride layer.
Further, it is equipped between the chromium metal layer and the optical layer for increasing the chromium metal layer and the light
Learn the transition zone of layer binding force；
Preferably, the transition zone is chromium metallic compound；
Preferably, the chromium metallic compound is chromium nitride；
Preferably, the transition zone with a thickness of 0.1-200nm, preferably 10-200nm.
Further, the chromium metal layer with a thickness of 30~70nm, preferably 40~60nm.
Further, the optical layer includes the first optical layer and the second optical layer, and first optical layer includes alternating
The silicon oxide layer and silicon layer of setting, second optical layer are silicon nitride layer, silicon oxide layer and institute in first optical layer
State chromium metal layer or transition zone contact；
Preferably, the number of plies of silicon oxide layer and silicon layer is respectively 1~4 layer in first optical layer；
Preferably, mono-layer oxidized silicon layer with a thickness of 100~140nm, preferably 110~130nm, the thickness of single layer silicon layer
For 20~40nm, preferably 25~35nm；
Preferably, the silicon nitride layer with a thickness of 20~25nm, preferably 21~24nm.
A kind of preparation method of above-mentioned ceramic substrate Logo, provides ceramic substrate, the ceramic base plate surface successively
(a) chromium metal layer is formed, (b) optionally transition zone, and (c) optical layer obtains the ceramic substrate Logo.
Further, chromium metal layer and optionally transition zone are prepared in ceramic base plate surface using magnetically controlled sputter method,
Optical layer is prepared in the chromium metal layer or transition layer surface using magnetically controlled sputter method again, the ceramic substrate is obtained and uses
Logo。
Further, chromium target is selected to deposit chromium metal layer, chromium metal layer on ceramic matrix surface using magnetically controlled sputter method
Magnetron sputtering technique parameter include: chromium 6000~7000W of target power output, 80~120sccm of argon flow, deposition rate 0.03~
0.3nm/s；
Preferably, select chromium target using magnetically controlled sputter method in chromium layer on surface of metal sedimenting chromium chloride transition zone, chromium nitride
The magnetron sputtering technique parameter of transition zone includes: chromium target power output 6000~7000W, RF 1500~3000W of power, argon flow 0
~150sccm, 40~80sccm of nitrogen flow, 0.1~0.4nm/s of deposition rate；
Preferably, select silicon target using magnetically controlled sputter method in chromium metal layer or transition layer surface alternating deposit silicon oxide layer
And silicon layer；
The magnetron sputtering technique parameter of silicon oxide layer includes: silicon target power 6000~8000W, RF 1000~3000W of power,
0~150sccm of argon flow, 120~150sccm of oxygen flow, 0.2~0.4nm/s of deposition rate；
The magnetron sputtering technique parameter of silicon layer includes: silicon target power 6000~8000W, RF 1000~3000W of power, argon gas
80~300sccm of flow, 0.1~0.3nm/s of deposition rate；
Preferably, select silicon target using magnetically controlled sputter method in silicon oxide layer or silicon surface deposited silicon nitride layer, nitridation
The magnetron sputtering technique parameter of silicon layer includes: silicon target power 6000~8000W, RF 1000~3000W of power, and argon flow 0~
150sccm, stream of nitrogen gas 30~80sccm of amount, 0.2~0.4nm/s of deposition rate.
Further, the pierced pattern of Logo, then benefit are first formed in the ceramic base plate surface using protective film or ink
Ceramic substrate Logo is prepared with the magnetically controlled sputter method；
The magnetic control is recycled to splash after the ceramic substrate that surface is formed with pierced pattern is carried out plasma surface treatment
Shooting method prepares ceramic substrate Logo；
Preferably, the technological parameter of plasma surface treatment includes: background vacuum 3.0~4.0 × 10-4Pa, RF function
2000~3000W of rate, 80~300sccm of argon flow, 80~300sccm of oxygen flow handle 180~1200s of time.
A kind of ceramic cover plate, including ceramic substrate and the ceramic substrate Logo or the benefit that are set to the ceramic base plate surface
The ceramic substrate Logo obtained with above-mentioned preparation method.
A kind of electronic equipment, including above-mentioned ceramic cover plate.
Compared with the prior art, the invention has the following beneficial effects:
Ceramic substrate provided by the invention Logo includes chromium metal layer and optical layer, wherein chromium metal layer is used for and pottery
Porcelain substrate contact, due to crome metal show silver color, ceramic substrate of the invention with Logo in terms of front when show silver color；
Meanwhile one layer of optical layer being combined by silicon oxide layer, silicon layer and silicon nitride layer is covered in chromium layer on surface of metal, when different
When ceramic substrate Logo is observed in side, refraction and reflex due to light can show different colors.By changing
Become the available different face a variety of from blue to purple of built-up sequence of silicon oxide layer, silicon layer and silicon nitride layer in optical layer
Color.
In addition, since the binding force of crome metal and ceramic matrix is relatively high, Logo and ceramic base provided by the invention
The adhesive force of body is higher；Meanwhile the present invention is by selecting the combination of silicon oxide layer, silicon layer and silicon nitride layer as optical layer, it can
To improve the adhesion strength of Logo.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is the structural schematic diagram for the ceramic substrate Logo that the embodiment of the present invention 1 provides；
Fig. 2 is the overlooking structure diagram of the ceramic cover plate in the embodiment of the present invention 2；
Fig. 3 is the schematic diagram of the section structure of the ceramic cover plate in the embodiment of the present invention 2；
Fig. 4 is the structural schematic diagram for the ceramic substrate Logo that the embodiment of the present invention 3 provides；
Fig. 5 is the schematic diagram of the section structure of the ceramic cover plate in the embodiment of the present invention 4.
Icon: 10- ceramic substrate；20-Logo；21- chromium metal layer；22- silicon oxide layer；23- silicon layer；24- silicon nitride layer；
25- chromium nitride transition zone.
Specific embodiment
Technical solution of the present invention is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that term " center ", "upper", "lower", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" be based on the orientation or positional relationship shown in the drawings, merely to
Convenient for description the present invention and simplify description, rather than the device or element of indication or suggestion meaning must have a particular orientation,
It is constructed and operated in a specific orientation, therefore is not considered as limiting the invention.In addition, term " first ", " second " are only
For descriptive purposes, it is not understood to indicate or imply relative importance.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood as the case may be
Concrete meaning in the present invention.
One aspect of the present invention provides a kind of ceramic substrate Logo, including the chromium gold for contacting with ceramic substrate
Belong to layer and be set to the optical layer of the chromium layer on surface of metal, the optical layer is the group of silicon oxide layer, silicon layer and silicon nitride layer
It closes.
Ceramic substrate provided by the invention Logo includes chromium metal layer and optical layer, wherein chromium metal layer is used for and pottery
Porcelain substrate contact, due to crome metal show silver color, ceramic substrate of the invention with Logo in terms of front when show silver color；
Meanwhile one layer of optical layer being combined by silicon oxide layer, silicon layer and silicon nitride layer is covered in chromium layer on surface of metal, when different
When ceramic substrate Logo is observed in side, refraction and reflex due to light can show different colors.By changing
Become the available different face a variety of from blue to purple of built-up sequence of silicon oxide layer, silicon layer and silicon nitride layer in optical layer
Color.
In addition, since the binding force of crome metal and ceramics is relatively high, Logo's and ceramic matrix provided by the invention
Adhesive force is higher；Meanwhile the present invention is by selecting the combination of silicon oxide layer, silicon layer and silicon nitride layer as optical layer, Ke Yiti
The adhesion strength of high Logo.
It should be noted that the chromium metal layer in the present invention is for showing metallochrome, silicon oxide layer, silicon layer and silicon nitride layer
The optical layer of composition is photic zone for transmiting, reflecting and reflecting light source optical layer.When optical layer is with a thickness of nanoscale, from
When the observation of front, the color of chromium metal layer can be perceived as silver color through optical layer；And when viewing from the side, due to optical layer
Presence, light occur in optical layer transmission, refraction and reflect so as to be shown as the difference between blue to purple
Color.
In the present invention, the optical layer only need to include silicon oxide layer, silicon layer and silicon nitride layer, and the present invention is not right
Silicon oxide layer, silicon layer and silicon nitride layer are made specific combination and are limited in optical layer, by adjusting silicon oxide layer, silicon layer and nitridation
The built-up sequence of silicon layer or by adjusting silicon oxide layer, silicon layer and silicon nitride layer thickness or simultaneously adjust built-up sequence and thickness
The Logo that can make shows different colors between blue and purple.
For example, the structure of optical layer includes but is not limited to: 1) being set in turn in the oxidation of chromium metal layer or transition layer surface
Silicon layer, silicon layer and silicon nitride layer；2) be set in turn in the silicon oxide layer of chromium metal layer or transition layer surface, silicon layer, silicon nitride layer,
Silicon oxide layer, silicon layer and silicon nitride layer；3) silicon oxide layer, silicon layer, oxidation of chromium metal layer or transition layer surface are set in turn in
Silicon layer, silicon layer and silicon nitride layer；4) be set in turn in the silicon oxide layer of chromium metal layer or transition layer surface, silicon layer, silicon oxide layer,
Silicon layer, silicon oxide layer and silicon nitride layer etc..
In certain embodiments of the present invention, it is equipped between the chromium metal layer and the optical layer described for increasing
The transition zone of chromium metal layer and the optical layer binding force.Transition is optionally set between chromium metal layer and optical layer
Layer, can be improved the adhesive force between chromium metal layer and optical layer.
The ceramic substrate in the present invention can be the combination of chromium metal layer and optical layer with Logo as a result, be also possible to according to
The combination of the chromium metal layer, transition zone and optical layer of secondary setting.
In certain embodiments of the present invention, the transition zone is chromium metallic compound.Optionally, the chromium metallization
Conjunction object is chromium nitride.Wherein, select chromium nitride as transition zone while improving binding force between chromium metal layer and optical layer,
It can also play the role of reducing the brightness of chromium metal layer, the color of chromium metal layer is made to seem softer.
In certain embodiments of the present invention, the transition zone with a thickness of 0.1-200nm, preferably 10-200nm.
In the above-described embodiment, the thickness of transition zone for example can be with are as follows: 0.1nm, 10nm, 50nm, 100nm, 150nm or
200nm。
In certain embodiments of the present invention, the chromium metal layer with a thickness of 30~70nm, preferably 40~60nm.
The thickness of chromium metal layer for example can be 30nm, 40nm, 50nm, 60nm or 70nm.
In certain embodiments of the present invention, the optical layer includes the first optical layer and the second optical layer, and described the
One optical layer includes the silicon oxide layer and silicon layer being arranged alternately, and second optical layer is silicon nitride layer, first optical layer
In silicon oxide layer contacted with the chromium metal layer or transition zone；Optionally, silicon oxide layer and silicon layer in first optical layer
The number of plies be respectively 1~4 layer.Optical layer using the above structure is available to be presented lilac Logo from the side.
In the above-described embodiment, mono-layer oxidized silicon layer with a thickness of 100~140nm, single layer silicon layer with a thickness of 20~
40nm；Optionally, the silicon nitride layer with a thickness of 20~25nm；Optionally, the chromium metal layer with a thickness of 30~70nm.
The second aspect of the invention provides the preparation method of ceramic substrate Logo a kind of, provides ceramic substrate, In
The ceramic base plate surface sequentially forms (a) chromium metal layer, and (b) optionally transition zone, and (c) optical layer, obtains the pottery
Porcelain substrate Logo.
There is all advantages of above-mentioned ceramic substrate Logo, In using the Logo that preparation method provided by the invention obtains
This is repeated no more.
In certain embodiments of the present invention, use magnetically controlled sputter method ceramic base plate surface prepare chromium metal layer with
And optionally transition zone, then optical layer is prepared in the chromium metal layer or transition layer surface using magnetically controlled sputter method, obtain institute
State ceramic substrate Logo.Chromium metal layer, optical layer and optional transition zone are prepared using magnetically controlled sputter method, can be improved
Bond strength between each layer, and then improve the scratch resistance capability of Logo.
In certain embodiments of the present invention, chromium target is selected to deposit one on ceramic matrix surface using magnetically controlled sputter method
Layer chromium metal layer, the magnetron sputtering technique parameter of chromium metal layer includes: chromium 6000~7000W of target power output, and argon flow 80~
120sccm, 0.03~0.3nm/s of deposition rate；
Optionally, it selects chromium target to deposit one layer in chromium layer on surface of metal using magnetically controlled sputter method and crosses chromium nitride transition zone,
The magnetron sputtering technique parameter of chromium nitride transition zone includes: chromium target power output 6000~7000W, RF 1500~3000W of power, argon gas
0~150sccm of flow, 40~80sccm of nitrogen flow, 0.1~0.4nm/s of deposition rate.
In certain embodiments of the present invention, select silicon target using magnetically controlled sputter method in chromium metal layer or transition zone table
Face alternating deposit silicon oxide layer and silicon layer；
The magnetron sputtering technique parameter of silicon oxide layer includes: silicon target power 6000~8000W, RF 1000~3000W of power,
0~150sccm of argon flow, 120~150sccm of oxygen flow, 0.2~0.4nm/s of deposition rate；
The magnetron sputtering technique parameter of silicon layer includes: silicon target power 6000~8000W, RF 1000~3000W of power, argon gas
80~300sccm of flow, 0.1~0.3nm/s of deposition rate.
In certain embodiments of the present invention, select silicon target using magnetically controlled sputter method in silicon oxide layer or silicon surface
Deposited silicon nitride layer, the magnetron sputtering technique parameter of silicon nitride layer include: silicon target power 6000~8000W, RF power 1000~
3000W, 0~150sccm of argon flow, stream of nitrogen gas 30~80sccm of amount, 0.2~0.4nm/s of deposition rate.
In certain embodiments of the present invention, Logo first is formed in the ceramic base plate surface using protective film or ink
Pierced pattern, recycle the magnetically controlled sputter method to prepare ceramic substrate Logo.
Ultrasonic cleaning first is carried out to ceramic matrix before pasting protective film or spraying ink, to remove ceramic matrix surface
It is dirty, then obtain Logo pattern on ceramic matrix surface using protective film or ink, after after carrying out preheating and drying processing
Magnetically controlled sputter method is recycled to prepare Logo.Such as can use magnetron sputtering coater and carry out preheating and drying processing, preheating is dry
Dry treatment conditions are as follows: vacuum degree 8 × 10-3Pa, 90~100 DEG C of tengsten lamp baking temperature, 12~18min of drying time.
In certain embodiments of the present invention, the ceramic substrate that surface is formed with pierced pattern is subjected to plasma body surface
The magnetically controlled sputter method is recycled to prepare ceramic substrate Logo after surface treatment.Optionally, the work of plasma surface treatment
Skill parameter includes: background vacuum 3.0~4.0 × 10-4Pa, RF 2000~3000W of power, 80~300sccm of argon flow, oxygen
80~300sccm of throughput handles 180~1200s of time.
Using plasma process of surface treatment handles the ceramic matrix of Logo pattern, can remove ceramic matrix
The defect and impurity on surface further increases the binding force between ceramic matrix and chromium metal layer.
The third aspect of the invention provides a kind of ceramic cover plate, including ceramic substrate and is set to the ceramic substrate
The ceramic substrate on surface is with the Logo or ceramic substrate Logo obtained using above-mentioned preparation method.
The fourth aspect of the invention provides a kind of electronic equipment, including above-mentioned ceramic cover plate.
Below in conjunction with embodiment, the present invention will be further described in detail.
Embodiment 1
As shown in Figure 1, the present embodiment is a kind of ceramic substrate Logo, including for the chromium metal in conjunction with ceramic substrate
Layer 21 and the optical layer that setting is bonded with chromium metal layer 21, optical layer is the silicon oxide layer 22 set gradually, silicon layer 23, silica
Layer 22, silicon layer 23, silicon oxide layer 22 and silicon nitride layer 24.The thickness value of specific each layer is listed in table 1.
Ceramic substrate Logo thicknesses of layers table in 1 embodiment 1 of table
With the ceramic substrate Logo of above structure in the present embodiment, silver color is shown when viewed from the front, is seen from side
Lavender is shown when examining.
Embodiment 2
As shown in Figures 2 and 3, the present embodiment is a kind of ceramic cover plate, including ceramic substrate 10 and is set to ceramic substrate
The Logo 20 that embodiment 1 on 10 provides, the preparation method of the ceramic cover plate in the present embodiment, comprising the following steps:
Step a): prepare bloom and throw bright ceramic product, cleaned using full-automatic 12 groove ultrasonic cleaning machine；
Step b): the production of hollow out Logo pattern is carried out by size tolerance requirements ink for screen printing, then detects whether to meet letter
Patience test request；
Step c): by the ceramic substrate for making hollow out Logo pattern be put into the transition chamber thereof of magnetron sputtering coater into
Row preheating and drying, the technological parameter of the process are as follows: be evacuated to 8.0 × 10-3Pa, while being added using the tengsten lamp baking in cavity
Hot 15min, 90 DEG C of baking temperature；
Step d): send the plated film to magnetron sputtering coater intracavitary ceramic substrate after the completion of preheating and drying, to ceramic base
Plate carries out plated film after carrying out plasma clean again, and the intracavitary background vacuum of plated film is in plasma clean and coating process
4.0×10-4Pa；Plasma cleaning process parameter is listed in table 2, and the coating process parameter of every tunic layer is listed in table 3；
2 plasma cleaning process parameter of table
| RF power (w) | Ar/sccm | O2/sccm | Time/s |
| 3000 | 120 | 100 | 300 |
The coating process parameter of the every tunic layer of table 3
Step e): the ceramic substrate for completing plated film is carried out to take off plating ink processing, and uses full-automatic 12 groove ultrasonic
Ceramic cover plate is obtained after cleaning machine cleaning.
Embodiment 3
As shown in figure 4, the present embodiment is a kind of ceramic substrate Logo, including for the chromium metal in conjunction with ceramic substrate
Layer 21,21 surface of chromium metal layer is successively arranged chromium nitride transition zone 25 and optical layer, and optical layer is the silicon oxide layer set gradually
22, silicon layer 23, silicon oxide layer 22, silicon layer 23, silicon oxide layer 22 and silicon nitride layer 24.The thickness value of specific each layer is listed in table 4.
Ceramic substrate Logo thicknesses of layers table in 4 embodiment 3 of table
With the ceramic substrate Logo of above structure in the present embodiment, silver color is shown when viewed from the front, is seen from side
Lavender is shown when examining.Compared with the Logo in embodiment 1, brightness when showing silver color is lower.
Embodiment 4
As shown in figure 5, the present embodiment is a kind of ceramic cover plate, including ceramic substrate 10 and the reality being set on ceramic substrate
The Logo 20 of the offer of example 3, the preparation method of the ceramic cover plate in the present embodiment are provided, comprising the following steps:
Step a): prepare bloom and throw bright ceramic product, cleaned using full-automatic 12 groove ultrasonic cleaning machine；
Step b): the production of hollow out Logo pattern is carried out by size tolerance requirements ink for screen printing, then detects whether to meet letter
Patience test request；
Step c): by the ceramic substrate for making hollow out Logo pattern be put into the transition chamber thereof of magnetron sputtering coater into
Row preheating and drying, the technological parameter of the process are as follows: be evacuated to 8.0 × 10-3Pa, while being added using the tengsten lamp baking in cavity
Hot 15min, 90 DEG C of baking temperature；
Step d): send the plated film to magnetron sputtering coater intracavitary ceramic substrate after the completion of preheating and drying, to ceramic base
Plate carries out plated film after carrying out plasma clean again, and the intracavitary background vacuum of plated film is in plasma clean and coating process
4.0×10-4Pa；Plasma cleaning process parameter is listed in table 5, and the coating process parameter of every tunic layer is listed in table 6；
5 plasma cleaning process parameter of table
| RF power (w) | Ar/sccm | O2/sccm | Time/s |
| 3000 | 120 | 100 | 300 |
The coating process parameter of the every tunic layer of table 6
Step e): the ceramic substrate for completing plated film is carried out to take off plating ink processing, and uses full-automatic 12 groove ultrasonic
Ceramic cover plate is obtained after cleaning machine cleaning.
The Logo in ceramic cover plate provided respectively embodiment 2 and embodiment 4 is tested for the property, and is tested with colour photometer
Then the coloration of Logo again tests the pencil hardness of Logo, boiling performance, thermal cycle and thermal impact, test knot
Structure is listed in table 7.
7 test result of table
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (10)
1. a kind of ceramic substrate Logo, which is characterized in that including the chromium metal layer for being contacted with ceramic substrate and be set to
The optical layer of the chromium layer on surface of metal, the optical layer are the combination of silicon oxide layer, silicon layer and silicon nitride layer.
2. ceramic substrate Logo according to claim 1, which is characterized in that the chromium metal layer and the optical layer it
Between be equipped with transition zone for increasing the chromium metal layer Yu the optical layer binding force；
Preferably, the transition zone is chromium metallic compound；
Preferably, the chromium metallic compound is chromium nitride；
Preferably, the transition zone with a thickness of 0.1-200nm, preferably 10-200nm.
3. ceramic substrate Logo according to claim 1 or 2, which is characterized in that the chromium metal layer with a thickness of 30
~70nm, preferably 40~60nm.
4. ceramic substrate Logo according to claim 1 or 2, which is characterized in that the optical layer includes the first optics
Layer and the second optical layer, first optical layer include the silicon oxide layer and silicon layer being arranged alternately, and second optical layer is nitrogen
SiClx layer, the silicon oxide layer in first optical layer are contacted with the chromium metal layer or transition zone；
Preferably, the number of plies of silicon oxide layer and silicon layer is respectively 1~4 layer in first optical layer；
Preferably, mono-layer oxidized silicon layer with a thickness of 100~140nm, preferably 110~130nm, single layer silicon layer with a thickness of 20
~40nm, preferably 25~35nm；
Preferably, the silicon nitride layer with a thickness of 20~25nm, preferably 21~24nm.
5. a kind of preparation method of the described in any item ceramic substrate Logo of claim 1-4, which is characterized in that provide ceramics
Substrate sequentially forms (a) chromium metal layer in the ceramic base plate surface, and (b) optionally transition zone, and (c) optical layer, obtains
The ceramic substrate Logo.
6. preparation method according to claim 5, which is characterized in that using magnetically controlled sputter method in ceramic base plate surface system
Standby chromium metal layer and optionally transition zone, then light is prepared in the chromium metal layer or transition layer surface using magnetically controlled sputter method
Layer is learned, the ceramic substrate Logo is obtained.
7. preparation method according to claim 6, which is characterized in that select chromium target using magnetically controlled sputter method in ceramic base
Body surface face deposits chromium metal layer, and the magnetron sputtering technique parameter of chromium metal layer includes: chromium 6000~7000W of target power output, argon gas stream
Measure 80~120sccm, 0.03~0.3nm/s of deposition rate；
Preferably, select chromium target using magnetically controlled sputter method in chromium layer on surface of metal sedimenting chromium chloride transition zone, chromium nitride transition
The magnetron sputtering technique parameter of layer includes: chromium target power output 6000~7000W, RF 1500~3000W of power, and argon flow 0~
150sccm, 40~80sccm of nitrogen flow, 0.1~0.4nm/s of deposition rate；
Preferably, select silicon target using magnetically controlled sputter method in chromium metal layer or transition layer surface alternating deposit silicon oxide layer and silicon
Layer；
The magnetron sputtering technique parameter of silicon oxide layer includes: silicon target power 6000~8000W, RF 1000~3000W of power, argon gas
0~150sccm of flow, 120~150sccm of oxygen flow, 0.2~0.4nm/s of deposition rate；
The magnetron sputtering technique parameter of silicon layer includes: silicon target power 6000~8000W, RF 1000~3000W of power, argon flow
80~300sccm, 0.1~0.3nm/s of deposition rate；
Preferably, select silicon target using magnetically controlled sputter method in silicon oxide layer or silicon surface deposited silicon nitride layer, silicon nitride layer
Magnetron sputtering technique parameter include: silicon target power 6000~8000W, RF 1000~3000W of power, argon flow 0~
150sccm, stream of nitrogen gas 30~80sccm of amount, 0.2~0.4nm/s of deposition rate.
8. according to the described in any item preparation methods of claim 5-7, which is characterized in that first using protective film or ink described
Ceramic base plate surface forms the pierced pattern of Logo, and the magnetically controlled sputter method is recycled to prepare ceramic substrate Logo；
The magnetron sputtering side is recycled after the ceramic substrate that surface is formed with pierced pattern is carried out plasma surface treatment
Method prepares ceramic substrate Logo；
Preferably, the technological parameter of plasma surface treatment includes: background vacuum 3.0~4.0 × 10-4Pa, RF power
2000~3000W, 80~300sccm of argon flow, 80~300sccm of oxygen flow handle 180~1200s of time.
9. a kind of ceramic cover plate, which is characterized in that including ceramic substrate and the claim for being set to the ceramic base plate surface
The described in any item ceramic substrates of 1-4 are with Logo or the ceramics obtained using the described in any item preparation methods of claim 5-8
Substrate Logo.
10. a kind of electronic equipment, which is characterized in that including ceramic cover plate as claimed in claim 9.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810465056.2A CN110484868B (en) | 2018-05-15 | 2018-05-15 | Logo for ceramic substrate, preparation method thereof, ceramic cover plate comprising Logo and electronic equipment comprising Logo |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810465056.2A CN110484868B (en) | 2018-05-15 | 2018-05-15 | Logo for ceramic substrate, preparation method thereof, ceramic cover plate comprising Logo and electronic equipment comprising Logo |
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| CN110484868A true CN110484868A (en) | 2019-11-22 |
| CN110484868B CN110484868B (en) | 2022-04-19 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111704479A (en) * | 2020-06-01 | 2020-09-25 | Oppo广东移动通信有限公司 | Surface treatment method for ceramic substrate, ceramic plate, case, and electronic device |
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