CN110473650A - Stacked anti-crosstalk x-ray fluorescence screen - Google Patents
Stacked anti-crosstalk x-ray fluorescence screen Download PDFInfo
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- CN110473650A CN110473650A CN201910623836.XA CN201910623836A CN110473650A CN 110473650 A CN110473650 A CN 110473650A CN 201910623836 A CN201910623836 A CN 201910623836A CN 110473650 A CN110473650 A CN 110473650A
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- crosstalk
- ray
- ray fluorescence
- photoelectric conversion
- conversion layer
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens
Abstract
Stacked anti-crosstalk x-ray fluorescence screen is related to X-ray detection field, by realizing the convergence of ray to the design of fluorescent screen internal structure and preventing influence of the crosstalk to imaging, and then improves the detection performance to X-ray.The fluorescent screen includes: the uniformly silicon wafer, metallic reflective coating of trapezoidal microchannel, flashing film and photoelectric conversion layer；The trapezoidal microchannel interior walls are successively arranged metallic reflective coating and flashing film, and the photoelectric conversion layer is arranged in silicon wafer bottom；The trapezoidal microchannel upper bottom surface is greater than bottom surface；X-ray enters in the x-ray fluorescence screen with trapezoidal microchannel structure, after flashing film sorption enhanced is faint visible light, is reflected by metallic reflective coating, visible light is made to pass through photoelectric conversion layer, by photoelectric conversion layer it will be seen that light is converted into electric signal, image is exported.The present invention realizes the convergence of ray and prevents influence of the crosstalk to imaging；Flashing is located on metallic reflective coating, which, which can increase, absorbs useful photon number, and prevents crosstalk from bringing harm.
Description
Technical field
The present invention relates to X-ray detection field more particularly to a kind of stacked anti-crosstalk x-ray fluorescence screens.
Background technique
X-ray detection was widely used in every field in recent years, such as in industrial non-destructive flaw detection, safety inspection, doctor
Image documentation equipment etc. X-ray detection is learned all to play an important role.It is various each and with the continuous development of electrooptical device
The digital detector layer of sample, which goes out, repeatedly to be seen, so that these applications are more convenient.X-ray detector is divided into Direct-type and indirect-type two
Major class.Direct-type detector can directly absorb X-ray and convert thereof into electric signal；And indirect-type detector is flashed by one layer
X-ray is first converted into visible light signal by material, then will be seen that light is converted into electric signal with electrooptical device again.Direct-type
There is the disadvantages of poor to the absorbability of X-ray, operating temperature requirements are harsh in detector, using wide not as good as indirect-type detector
It is general.
Indirect-type detector is made of fluorescent screen and electrooptical device.Electrooptical device mainly has: CCD, CMOS and
Silicon photoelectric diode etc..Fluorescent screen is one layer of scintillation material, absorbs X-ray, and launch visible light.It is now common in the market
Not only the price is very expensive but also due to the coupled relation inside own for digital imagery panel, will form and moves under water between nearly unit
Electric current generates crosstalk to the unit of normal work, and this phenomenon can change with the change of x-ray dose.And it can not
Effectively realize convergence this function of X-ray.Existing product not yet overcomes these problems.
Summary of the invention
In order to solve the problems in the existing technology, the present invention provides a kind of stacked anti-crosstalk x-ray fluorescence screen,
By realizing the convergence of ray to the design of fluorescent screen internal structure and preventing influence of the crosstalk to imaging, and then improve to X
The detection performance of ray.
The technical proposal for solving the technical problem of the invention is as follows:
Stacked anti-crosstalk x-ray fluorescence screen, the fluorescent screen include: uniformly the silicon wafer, metallic reflective coating of trapezoidal microchannel,
Flash film and photoelectric conversion layer；The trapezoidal microchannel interior walls are successively arranged metallic reflective coating and flashing film, the photoelectric conversion
Layer is arranged in silicon wafer bottom；The trapezoidal microchannel upper bottom surface is greater than bottom surface；X-ray is entered with trapezoidal microchannel structure
X-ray fluorescence screen in, by flashing film sorption enhanced be faint visible light after, reflected by metallic reflective coating, make visible light
Image is exported by photoelectric conversion layer it will be seen that light is converted into electric signal by photoelectric conversion layer.
Preferably, the base angle range of the trapezoidal microchannel is 45 ° -50 °.
Preferably, the area of the bottom surface is 1 pixel.
Preferably, the material of the metallic reflective coating film is aluminium.
Preferably, the aluminium atom film is 250-1000 layers, with a thickness of 100-400nm.
Preferably, the material of the flashing film is cesium iodide or gadolinium oxysulfide.
Preferably, the cesium iodide is arranged outside metallic reflective coating by vapor deposition.
The beneficial effects of the present invention are: fluorescent screen of the invention is used to the stacked drilling processing of silicon plate progress, and
Metallic reflective coating is plated in tube wall.To realize the convergence of ray and prevent influence of the crosstalk to imaging；Flashing is located at metallic reflection
On film, cesium iodide or gadolinium oxysulfide are generally used；Visible light is converted by absorbed X-ray by electrooptical device, realizes that X is penetrated
The photoelectric conversion of line.The structure, which can increase, absorbs useful photon number, and prevents crosstalk from bringing harm.
Detailed description of the invention
The partial structural diagram of the stacked anti-crosstalk x-ray fluorescence screen of Fig. 1 present invention.
The planar structure schematic diagram of the stacked anti-crosstalk x-ray fluorescence screen of Fig. 2 present invention.
In figure: 1, trapezoidal microchannel, 2, metallic reflective coating, 3, flashing film, 4, photoelectric conversion layer
Specific embodiment
The present invention is described in further details with reference to the accompanying drawings and examples.
As shown in Figure 1, stacked anti-crosstalk x-ray fluorescence screen, the fluorescent screen include: uniformly the silicon wafer of trapezoidal microchannel 1,
Metallic reflective coating 2, flashing film 3 and photoelectric conversion layer 4；1 inner wall of trapezoidal microchannel is successively arranged metallic reflective coating 2 and flashing
Film 3, the photoelectric conversion layer 4 are arranged in silicon wafer bottom；1 upper bottom surface of trapezoidal microchannel is greater than bottom surface；X-ray enters
In x-ray fluorescence screen with trapezoidal 1 structure of microchannel, after flashing 3 sorption enhanced of film is faint visible light, pass through metal
Reflectance coating 2 reflects, and makes visible light by photoelectric conversion layer 4, by photoelectric conversion layer 4 it will be seen that light is converted into electric signal, by image
Output.
In the present embodiment, layer-by-layer upward perforating is carried out by photoetching position location in silicon base, the shape in hole is radius
The concentric circles being gradually increased, the radius of smallest circle are 125 μm, are approximately equal to a pixel size, eventually form an inverted trapezoidal knot
Structure, inner wall surface approximation is smooth, and the angle at base angle is 45o, carries out atomic layer deposition using metallic aluminium and carries out plated film, by aluminium atom
With 1 inner wall of trapezoidal microchannel for being plated in silicon base of monatomic form membrane in layer, play the role of preventing X-ray crosstalk.
Metallic reflective coating 2 of the present invention needs to deposit single 250-1000 layers of aluminium atom film, with a thickness of 100-400nm.It is general to flash film 3
For cesium iodide or gadolinium oxysulfide, is sublimated and be covered on metallic reflective coating 2 using cesium iodide steam or gadolinium oxysulfide steam, make it
Visible light can be emitted after absorbing X-ray.Photoelectric conversion layer 4 will be seen that light is converted into electric signal, complete the photoelectricity of detector
Conversion.
X-ray is incident, and into trapezoidal microchannel 1, the material of fluorescent film 3 is cesium iodide in the present embodiment, and absorbable X is penetrated
Line emits visible light, and metallic reflective coating 2 is aluminium in the present embodiment, and the blocking and reflex of aluminium can block X-ray substantially
Crosstalk, when visible light reaches photoelectric conversion layer 4, photodetector is according to the power of electric signal and whether there is or not judge the strong of X-ray
It is weak and whether there is or not so that carry out x-ray imaging.
Claims (7)
1. stacked anti-crosstalk x-ray fluorescence screen, which is characterized in that the fluorescent screen includes: the silicon wafer, gold of uniformly trapezoidal microchannel
Belong to reflectance coating, flashing film and photoelectric conversion layer；The trapezoidal microchannel interior walls are successively arranged metallic reflective coating and flashing film, described
Photoelectric conversion layer is arranged in silicon wafer bottom；The trapezoidal microchannel upper bottom surface is greater than bottom surface；X-ray is entered with trapezoidal micro-
In the x-ray fluorescence screen of channel design, after flashing film sorption enhanced is visible light, reflected by metallic reflective coating, making can
It is light-exposed to be exported image by photoelectric conversion layer it will be seen that light is converted into electric signal by photoelectric conversion layer.
2. stacked anti-crosstalk x-ray fluorescence screen according to claim 1, which is characterized in that the trapezoidal microchannel
Base angle range is 45 ° -50 °.
3. stacked anti-crosstalk x-ray fluorescence screen according to claim 1, which is characterized in that the area of the bottom surface
For 1 pixel.
4. stacked anti-crosstalk x-ray fluorescence screen according to claim 1, which is characterized in that the metallic reflective coating
Material is aluminium.
5. stacked anti-crosstalk x-ray fluorescence screen according to claim 4, which is characterized in that the aluminium atom film is
250-1000 layers, with a thickness of 100-400nm.
6. stacked anti-crosstalk x-ray fluorescence screen according to claim 1, which is characterized in that the material of the flashing film
For cesium iodide or gadolinium oxysulfide.
7. stacked anti-crosstalk x-ray fluorescence screen according to claim 6, which is characterized in that the cesium iodide passes through steaming
Plating is arranged outside metallic reflective coating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910623836.XA CN110473650B (en) | 2019-07-11 | 2019-07-11 | Laminated crosstalk-proof X-ray fluorescent screen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910623836.XA CN110473650B (en) | 2019-07-11 | 2019-07-11 | Laminated crosstalk-proof X-ray fluorescent screen |
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| CN110473650A true CN110473650A (en) | 2019-11-19 |
| CN110473650B CN110473650B (en) | 2023-06-02 |
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| CN201910623836.XA Active CN110473650B (en) | 2019-07-11 | 2019-07-11 | Laminated crosstalk-proof X-ray fluorescent screen |
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Citations (12)
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| JP2007248283A (en) * | 2006-03-16 | 2007-09-27 | Toshiba Corp | Scintillator, fluorescent screen, and x-ray detector using it |
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| US20140103219A1 (en) * | 2011-06-07 | 2014-04-17 | Harry Hedler | Radiation detector and imaging system |
| US20140138549A1 (en) * | 2012-11-21 | 2014-05-22 | Abyzr Co., Ltd. | X-ray detecting device |
| CN206322481U (en) * | 2016-10-24 | 2017-07-11 | 上海健康医学院 | A kind of fluorescent screen for X-ray detection |
| US20180341028A1 (en) * | 2017-05-29 | 2018-11-29 | Korea Electronics Technology Institute | Scintillator using semiconductor quantum dots, manufacturing method thereof, and digital image diagnostic system employing the same |
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2019
- 2019-07-11 CN CN201910623836.XA patent/CN110473650B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02198386A (en) * | 1989-01-27 | 1990-08-06 | Toshiba Corp | X-ray detector |
| US5265327A (en) * | 1991-09-13 | 1993-11-30 | Faris Sadeg M | Microchannel plate technology |
| US6534772B1 (en) * | 1997-11-28 | 2003-03-18 | Nanocrystal Imaging Corp. | High resolution high output microchannel based radiation sensor |
| US20040245521A1 (en) * | 2001-09-12 | 2004-12-09 | Faris Sadeg M. | Microchannel plates and biochip arrays, and methods of making same |
| CN1628254A (en) * | 2002-02-08 | 2005-06-15 | 株式会社东芝 | X-ray detector and method for producing x-ray detector |
| JP2007248283A (en) * | 2006-03-16 | 2007-09-27 | Toshiba Corp | Scintillator, fluorescent screen, and x-ray detector using it |
| US20140103219A1 (en) * | 2011-06-07 | 2014-04-17 | Harry Hedler | Radiation detector and imaging system |
| JP2013015353A (en) * | 2011-07-01 | 2013-01-24 | Toshiba Corp | Radiation detector and manufacturing method thereof |
| US20140138549A1 (en) * | 2012-11-21 | 2014-05-22 | Abyzr Co., Ltd. | X-ray detecting device |
| CN103700423A (en) * | 2013-12-12 | 2014-04-02 | 江苏龙信电子科技有限公司 | Waveguide cesiumiodide flash screen and preparation method thereof |
| CN206322481U (en) * | 2016-10-24 | 2017-07-11 | 上海健康医学院 | A kind of fluorescent screen for X-ray detection |
| US20180341028A1 (en) * | 2017-05-29 | 2018-11-29 | Korea Electronics Technology Institute | Scintillator using semiconductor quantum dots, manufacturing method thereof, and digital image diagnostic system employing the same |
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| CN110473650B (en) | 2023-06-02 |
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