CN110459468A - The lithographic method of TiAlN thin film - Google Patents
The lithographic method of TiAlN thin film Download PDFInfo
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- CN110459468A CN110459468A CN201910812936.7A CN201910812936A CN110459468A CN 110459468 A CN110459468 A CN 110459468A CN 201910812936 A CN201910812936 A CN 201910812936A CN 110459468 A CN110459468 A CN 110459468A
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- thin film
- cleaning solution
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Abstract
The invention discloses a kind of lithographic method of TiAlN thin film, which includes oxide layer；The lithographic method includes: step S1 pre-treatment step, using the first cleaning solution, under the first cleaning solution temperature, cleans the first scavenging period；Step S2 main process task step under the second cleaning solution temperature, cleans the second scavenging period using the second cleaning solution.It is intracavitary in same cleaning, after having carried out the step S1, continuously carry out the step S2.Accordingly, according to the lithographic method, after first the oxide layer on TiAlN thin film surface can be removed, TiAlN thin film is carried out immediately, eliminates the influence of oxide layer at this time, the etch rate of TiAlN thin film can't generate fluctuation because of the etching between different materials, so as to be monitored to etch rate, and etch process parameters are adjusted accordingly, so that the craft precision of the wet etching is promoted, reduce the adverse effect to subsequent technique, finally produces the device for meeting required precision.
Description
Technical field
The present invention relates to semiconductor device processing technology field, in particular to a kind of lithographic method of TiAlN thin film.
Background technique
To meet the requirement that dimensions of semiconductor devices in IC manufacturing constantly reduces in proportion, that is, technology node
Desired size constantly reduces.Into after 20nm technology node, process complexity degree is improved, for each technical process
Higher requirement is needed, the accurate control of technological parameter is needed in most of techniques, the essence in manufacturing process can be met
Degree control.
In wet-etching technology, the concentration precision of chemical liquids is required to improve.It can when chemical concentrations inaccuracy
Film can be caused to remove unclean or overetch.In workfunction layers (WFM), the etching technics of TiN is usually adopted
Use wet etching.For example, it is desired to remove the TiAlN thin film in NMOS area, if because of the change under special ratios needed in etching technics
Learn liquid concentration abnormality, then will lead to can not effectively remove TiAlN thin film, then can yield to subsequent technique and final reliability have
Significant impact.
As shown in fig.1, in the prior art, after TiAlN thin film preparation, there is TiAlN thin film layer 02 on silicon layer 01.It is placed in crystalline substance
Next station is transferred in boat box to carry out wet etching, transmission process P1 needs to spend waiting time Tq.With the waiting time
Passage, TiAlN thin film 02 reacted with the oxygen in air cause surface formed TiON oxide layer 03.And in previous process
(transmission of Fig. 1 waits before P1), does not almost there is native oxide generation.The prior art, using semiconductor wet etching apparatus
Spray head 04 spray SC1 solution (main component is NH4OH:H2O2: H2O=1:1:5 it) is cleaned, due to there are oxide layer 03,
Decline so as to cause the etching of TiN layer 02.
Since the oxygen binding ability of Ti in TiN layer 02 is very strong, even if waiting time TqIt is small again, it also will form one layer of oxidation
Layer 03, leads to the generation of the above problem.
Moreover, etch rate is technical parameter important in wet etching, and directly control the skill of device machining accuracy
Art parameter.SC1 solution is different to the etch rate of oxide layer 03 with TiAlN thin film layer 02, is easy so that this technology of etch rate
Parameter generates concussion, to affect the observing and controlling to the parameter.
Therefore, how a kind of 02 method of etching TiN layer is provided, influence of the oxide layer 03 to etch rate, energy can be eliminated
It is enough that etch rate is monitored in etching process, and etching speed can be adjusted by adjusting related process parameters
Rate can finally produce the device for meeting required precision.
Summary of the invention
The technical problem to be solved by the application is to provide a kind of etching side's methods of film, can be in etching process
In etch rate is monitored, and can by adjust related process parameters adjust etch rate, can finally produce
Meet the device of required precision.
In order to solve the above technical problems, the present invention provides a kind of lithographic method of TiAlN thin film, its object is to can incite somebody to action
The parameter of etch rate in TiAlN thin film etching technics extremely can monitoring state --- in this, as feedback, and combine related work
The adjusting of skill parameter, can be by wet etching TiAlN thin film precision improvement, and reduces the adverse effect to subsequent technique accordingly, most
The device for meeting required precision is produced eventually.
In order to achieve the above object, the present invention provides a kind of lithographic method of TiAlN thin film, the TiAlN thin film includes one
Oxide layer；
The lithographic method includes:
Step S1, pre-treatment step under the first cleaning solution temperature, clean the first scavenging period using the first cleaning solution；
Step S2, main process task step under the second cleaning solution temperature, clean the second scavenging period using the second cleaning solution.
Preferably, the oxide layer is in transport process, and TiAlN thin film outer surface TiN adsorbs oxygen and generates TiON layers.
Preferably, transhipment time is greater than 1 hour, the oxide layer to being saturated, after saturation the oxide layer with a thickness of 7~
10 Ethylmercurichlorendimides.
Preferably, first cleaning solution is dilute hydrofluoric acid.
Preferably, first cleaning solution temperature is 25~30 DEG C.
Preferably, first scavenging period, 60~240s.
Preferably, the flow of first cleaning solution is 1000~2000 ml/mins.
Preferably, second cleaning solution is ammonium hydroxide aqueous hydrogen peroxide solution, parts by weight meter, NH4OH:H2O2: H2O=1:1:
5。
Preferably, second cleaning solution temperature is 40~60 DEG C.
Preferably, second scavenging period, 60~120s.
Preferably, the flow of second cleaning solution is 1000~2000 ml/mins.
Preferably, the lithographic method uses in-situ process；
It is intracavitary in same cleaning, after having carried out the step S1, continuously carry out the step S2.
Preferably, the step S2 further includes,
Step S21 monitors the etch rate of TiAlN thin film；
Step S22 adjusts cleaning parameters according to the requirement etched in technique.
Preferably, cleaning parameters described in the step S22 include the scavenging period of the second cleaning solution, cleaning solution flow,
Cleaning solution temperature or concentration of lotion.
Preferably, this method is applied to 28 nanometers of technology node or less, 22 nanometers or less, 20 nanometers or less or 16 nanometers
Following processing procedure.
Compared with prior art, the present invention provides a kind of lithographic method of TiAlN thin film, and the TiAlN thin film includes an oxidation
Layer；The lithographic method includes: step S1, and pre-treatment step under the first cleaning solution temperature, is cleaned using the first cleaning solution
First scavenging period；Step S2, main process task step, using the second cleaning solution, under the second cleaning solution temperature, the second cleaning of cleaning
Time.Can be intracavitary in same cleaning, after having carried out the step S1, continuously carry out the step S2.Accordingly, according to institute
Lithographic method is stated, after capable of first removing the oxide layer on TiAlN thin film surface, TiAlN thin film is carried out immediately, eliminates oxidation at this time
The influence of layer, the etch rate of TiAlN thin film can't generate fluctuation because of the etching between different materials, so as to etching
Rate is monitored, and etch process parameters are adjusted accordingly, so that the craft precision of the wet etching is promoted, is reduced
Adverse effect to subsequent technique finally produces the device for meeting required precision.
Detailed description of the invention
Fig. 1 is to use wet-etching technology schematic diagram after the TiAlN thin film of the prior art generates oxide layer.
Fig. 2 is the lithographic method process schematic representation of TiAlN thin film of the invention.
Description of symbols
01 silicon layer, 02 TiAlN thin film layer
03 TiON oxide layer, 04 spray head
P1 transmission process TqWaiting time
11 silicon layer, 12 TiAlN thin film layer
13 TiON oxide layer, 21 first spray head
22 second spray heads 30 clean chamber
S1 pre-treatment step S2 main process task step
P2 in-situ process Tq1Work step time interval
Specific embodiment
It elaborates with reference to the accompanying drawing to a preferred embodiment of the present invention.It is to be appreciated that the present invention not office
It is limited to above-mentioned particular implementation, devices and structures not described in detail herein should be understood as with the common side in this field
Formula is practiced；Anyone skilled in the art, it is without departing from the scope of the technical proposal of the invention, all available
The methods and technical content of the disclosure above makes many possible changes and modifications to technical solution of the present invention, or is revised as equivalent
The equivalent embodiment of variation, this is not affected the essence of the present invention.
As shown in fig.2, usually TiAlN thin film refers to there is a TiAlN thin film layer 12 on Si layer 11.Due to TiAlN thin film layer
The oxygen activity of Ti in 12 is strong, so, although TiAlN thin film is without native oxide under normal circumstances, when TiAlN thin film is exposed to
A period of time, then can generate an oxide layer 13 on TiAlN thin film layer in air.The oxide layer 13 is the TiN in transport process
12 outer surface TiN of film layer adsorbs oxygen and generates TiON layer 13.
Under normal conditions, after transhipment time reaches 1 hour, the oxide layer 13 to saturation, the oxide layer after saturation
With a thickness of 7~10 Ethylmercurichlorendimides (Ethylmercurichlorendimide, i.e.,Equal to 10-10M, i.e., 0.1 nanometer).Even if transhipment time is short again also to generate institute
State oxide layer 13.
As shown in fig.2, the TiAlN thin film includes an oxide layer the present invention provides a kind of lithographic method of TiAlN thin film
13；The lithographic method includes: step S1, and pre-treatment step under the first cleaning solution temperature, is cleaned using the first cleaning solution
First scavenging period；Step S2, main process task step, using the second cleaning solution, under the second cleaning solution temperature, the second cleaning of cleaning
Time.
TiON layer 13 and TiN layer 12 need to perform etching using different cleaning solutions.
A specific embodiment of step S1 is provided.For TiON layer 13, need using dilute hydrofluoric acid (DHF) as first
Cleaning solution performs etching.In order to reach preferable etching effect, the temperature of dilute hydrofluoric acid (DHF) is 25~30 DEG C；Cleaning
60~240s of time；The flow of cleaning solution is 1000~2000 ml/mins.The purpose of step S1 is, as far as possible fastly will be described
The all etching removals of TiON layer 13.
A specific embodiment of step S2 is provided.For TiAlN thin film layer 12, need using the conduct of ammonium hydroxide aqueous hydrogen peroxide solution
Second cleaning solution performs etching.In order to reach preferable etching effect, the temperature of ammonium hydroxide aqueous hydrogen peroxide solution is 40~60 DEG C；
60~120s of scavenging period；The flow of cleaning solution is 1000~2000 ml/mins.The purpose of step S1 is, sudden and violent in TiN layer 12
Wet etching is carried out after dew as early as possible, and the etching rate of TiN layer 12 can be precisely controlled.
First cleaning solution and second cleaning solution, can be supplied to first spray head 21 and second spray head from two pipelines
22, each pipeline can be controlled separately, and can control and sprays first cleaning solution or second cleaning solution.
Shown in Fig. 2, the lithographic method uses in-situ process (IN-SITU Process) P2；I.e. in same cleaning chamber
In 30, after having carried out the step S1, the step S2 is continuously carried out.It is, need after having carried out step S1,
After etching whole TiON layer 13 (dotted line frame at S2), the exposed first time of TiN layer 12, in other words, pre-treatment step
Rapid S1 to work step time interval T between main process task step S2q1It is intended to 0 as far as possible.It is exposed to oxygen in addition, also to reduce to the greatest extent
In.If having transport process between pre-treatment step S1 and main process task step S2, even if very thin TiON layer 13 and TiN
Layer 12 combines, then, because the second cleaning solution needs to etch two kinds of materials at this time, and may also have non-uniform cross-distribution,
Can then concussion be generated to etching rate.In order to avoid foregoing problems, then there generally can not be transhipment, need using in-situ process, complete
At (i.e. the original position) immediately carries out step S2 in same cleaning chamber 30 after step S1, such second cleaning solution just etches list
One material --- TiN layer 12.
In the etching technics of TiAlN thin film, main purpose is etching removal TiN layer 12, moreover, the thickness of TiN layer 12 is half
The structural parameters for needing to control in conductor device structure.Therefore, the dimensional accuracy of control device in order to be more accurate, in this hair
In technique provided by bright, it is only necessary to carry out stringent monitoring and control (it is, not for pre-treatment step S1 to step S2
It needs to carry out real-time monitoring).After the completion of preamble technique, TiN layer 12 has an original depth, which can monitor, than
Such as ultrasonic measurement.The present invention provides the embodiment of a controllable step S2: the step S2 further includes step S21, monitors TiN
The etch rate of film；Step S22 adjusts cleaning parameters according to the requirement etched in technique.Firstly, etch rate is no longer big
Amplitude wave is dynamic or etch rate has not been normal (only being performed etching with a kind of cleaning solution) after preceding spy is small, therefore, the quarter
Losing rate is that can measure and can be used as feedback to carry out relevant control.Secondly, etch rate can be by cleaning parameters
Adjusting change, accordingly it is also possible to controlled according to feedback.
Preferably, cleaning parameters described in the step S22 include the scavenging period of the second cleaning solution, cleaning solution flow,
Cleaning solution temperature or concentration of lotion.
The control of scavenging period is exactly the opening time for controlling the pipeline switch valve of the second cleaning solution, be exactly the T1 moment from
The dynamic connection for stirring solenoid valve to pipeline to a second spray head 22 is open-minded, and in T2 moment automatic poking moving electromagnetic valve to another
Position pipeline to second spray head 22 connection closed.
The control of cleaning solution flow is exactly the pump being arranged in control piper, and control pump pumps out flow to required numerical value model
It encloses.
The control of cleaning solution temperature is exactly to control heating-cooling system temperature of liquid container.
The control of concentration of lotion can control the flow of three kinds of ingredients (ammonium hydroxide, hydrogen peroxide, water) corresponding each pump
System is imported to an intermediate receptacle (mixing chamber), or adjusts the flow that water is added.
Accordingly, the observing and controlling of the etching rate to TiN layer 12 may be implemented.
Preferably, this method is applied to 28 nanometers of technology node or less, 22 nanometers or less, 20 nanometers or less or 16 nanometers
Following processing procedure.The requirement of phase closing precision can be reached.
Compared with prior art, the present invention provides a kind of lithographic method of TiAlN thin film, and the TiAlN thin film includes an oxidation
Layer；The lithographic method includes: step S1, and pre-treatment step under the first cleaning solution temperature, is cleaned using the first cleaning solution
First scavenging period；Step S2, main process task step, using the second cleaning solution, under the second cleaning solution temperature, the second cleaning of cleaning
Time.Can be intracavitary in same cleaning, after having carried out the step S1, continuously carry out the step S2.Also, it monitors
The etch rate of TiAlN thin film；According to the requirement etched in technique, cleaning parameters are adjusted.To realize the etching of TiN layer 12
The observing and controlling of rate.Accordingly, TiN is carried out after capable of first removing the oxide layer on TiAlN thin film surface according to the lithographic method immediately
Film, eliminates the influence of oxide layer at this time, and the etch rate of TiAlN thin film can't be produced because of the etching between different materials
Raw fluctuation, so as to be monitored to etch rate, and is accordingly adjusted etch process parameters, so that the wet process is carved
The craft precision of erosion is promoted, and is reduced the adverse effect to subsequent technique, is finally produced the device for meeting required precision.
The above is only a preferred embodiment of the present invention, is not intended to limit the present invention.Come for those skilled in the art
It says, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any modification, equivalent
Replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (15)
1. a kind of lithographic method of TiAlN thin film, which is characterized in that the TiAlN thin film includes an oxide layer；
The lithographic method includes:
Step S1, pre-treatment step under the first cleaning solution temperature, clean the first scavenging period using the first cleaning solution；
Step S2, main process task step under the second cleaning solution temperature, clean the second scavenging period using the second cleaning solution.
2. the lithographic method of TiAlN thin film as described in claim 1, which is characterized in that the oxide layer be in transport process,
TiAlN thin film outer surface TiN adsorbs oxygen and generates TiON layers.
3. the lithographic method of TiAlN thin film as claimed in claim 2, which is characterized in that transhipment time is greater than 1 hour, the oxygen
Change layer to being saturated, the oxide layer with a thickness of 7~10 Ethylmercurichlorendimides after saturation.
4. the lithographic method of TiAlN thin film as described in claim 1, which is characterized in that first cleaning solution is dilute hydrogen fluorine
Acid.
5. the lithographic method of TiAlN thin film as described in claim 1, which is characterized in that first cleaning solution temperature be 25~
30℃。
6. the lithographic method of TiAlN thin film as described in claim 1, which is characterized in that first scavenging period, 60~240s.
7. the lithographic method of TiAlN thin film as described in claim 1, which is characterized in that the flow of first cleaning solution is
1000~2000 ml/mins.
8. the lithographic method of TiAlN thin film as described in claim 1, which is characterized in that second cleaning solution is ammonium hydroxide dioxygen
Water aqueous solution.
9. the lithographic method of TiAlN thin film as described in claim 1, which is characterized in that second cleaning solution temperature be 40~
60℃。
10. the lithographic method of TiAlN thin film as described in claim 1, which is characterized in that second scavenging period 60~
120s。
11. the lithographic method of TiAlN thin film as described in claim 1, which is characterized in that the flow of second cleaning solution is
1000~2000 ml/mins.
12. the lithographic method of the TiAlN thin film as described in one of claim 1 to 13, which is characterized in that the lithographic method uses
In-situ process；
It is intracavitary in same cleaning, after having carried out the step S1, continuously carry out the step S2.
13. the lithographic method of TiAlN thin film as claimed in claim 12, which is characterized in that the step S2 further includes,
Step S21 monitors the etch rate of TiAlN thin film；
Step S22 adjusts cleaning parameters according to the requirement etched in technique.
14. the lithographic method of TiAlN thin film as claimed in claim 13, which is characterized in that clean ginseng described in the step S22
Number includes scavenging period, cleaning solution flow, cleaning solution temperature or the concentration of lotion of the second cleaning solution.
15. the lithographic method of TiAlN thin film according to claim 13 or 14, which is characterized in that this method is applied to technology section
Put 28 nanometers or less, 22 nanometers or less, 20 nanometers or less or 16 nanometers or less processing procedures.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US11373912B2 (en) * | 2019-07-18 | 2022-06-28 | Semiconductor Manufacturing International (Shanghai) Corporation | Semiconductor structure and method for forming the same |
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