CN110455572A - A kind of ceramic electron element microsection and preparation method thereof - Google Patents

A kind of ceramic electron element microsection and preparation method thereof Download PDF

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Publication number
CN110455572A
CN110455572A CN201910805447.9A CN201910805447A CN110455572A CN 110455572 A CN110455572 A CN 110455572A CN 201910805447 A CN201910805447 A CN 201910805447A CN 110455572 A CN110455572 A CN 110455572A
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single layer
ceramic capacitor
layer ceramic
microsection
preparation
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CN110455572B (en
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陆亨
陈伟健
安可荣
刘双凤
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Guangdong Fenghua Advanced Tech Holding Co Ltd
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/003Measuring arrangements characterised by the use of electric or magnetic techniques for measuring position, not involving coordinate determination
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/26Measuring arrangements characterised by the use of electric or magnetic techniques for measuring depth
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/02Devices for withdrawing samples
    • G01N1/04Devices for withdrawing samples in the solid state, e.g. by cutting
    • G01N1/06Devices for withdrawing samples in the solid state, e.g. by cutting providing a thin slice, e.g. microtome
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/28Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/28Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32Polishing; Etching
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/28Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • G01N2001/2866Grinding or homogeneising

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  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

The invention discloses a kind of preparation methods of ceramic electron element microsection, include the following steps: that measuring samples, single layer ceramic capacitor and two filling blocks are pasted on substrate by (1) side by side, described two filling blocks are respectively by being attached to single layer ceramic capacitor two sides;(2) mold is pasted on substrate, mold surrounds measuring samples, single layer ceramic capacitor and filling block, then toward injection colloid inside mold, obtains blob of viscose after colloid solidification;(3) filling block is removed from blob of viscose, so that the two sides of single layer ceramic capacitor respectively form a cavity;(4) by blob of viscose grinding, polishing.The preparation method of ceramic electron element microsection of the invention, so that proofer is known the specific location of the grinding depth and current section of current section in ceramic electron element during the grinding process, the quality and efficiency of ceramic electron element microsection check analysis can be improved.

Description

A kind of ceramic electron element microsection and preparation method thereof
Technical field
The present invention relates to component measurement analysis field more particularly to a kind of ceramic electron element microsection and its preparations Method.
Background technique
When usually carrying out microsection check analysis as being sintered obtained ceramic body to ceramic electron element or its semi-finished product, Measuring samples are arranged in mold and resin mass is made in sealing resin, then by the sample being fixed in resin mass grinding, throwing Resin mass is finally placed on microscopically observation sample by light.Sometimes proofer is it should be understood that current section is specific in sample The grinding depth of position and current section, for example there are when internal flaw, want to understand defect in sample in discovery sample Specific location and approximate size, so as to the property and producing cause of analyzing defect;Or in order to more accurately control grind into Degree is in order to avoid profile position of interest is missed in overmastication, especially as 0201 specification, 01005 specification, 008004 specification etc. are outer The minimum ceramic electron element of size is enclosed with greater need for careful control grinding progress.However, conventional ceramic electron element metallographic is cut The preparation method of piece, proofer can not obtain above- mentioned information during the grinding process, lead to the quality defect of check analysis, efficiency It is low.
Summary of the invention
Based on this, a kind of ceramic electronic member is provided it is an object of the invention to overcome above-mentioned the deficiencies in the prior art place The preparation method of part microsection.The ceramic electron element microsection that this method is prepared, enables proofer grinding The specific location of the grinding depth and current section of current section in ceramic electron element is known in the process, and pottery can be improved The quality and efficiency of porcelain electronic component microsection check analysis.
To achieve the above object, a kind of the technical solution used in the present invention are as follows: system of ceramic electron element microsection Preparation Method includes the following steps:
(1) measuring samples, single layer ceramic capacitor and two filling blocks are pasted on substrate side by side, described two fillings Block is respectively by being attached to single layer ceramic capacitor two sides;
(2) mold is pasted on substrate, mold surrounds measuring samples, single layer ceramic capacitor and filling block, then past Colloid is injected inside mold, obtains blob of viscose after colloid solidification;
(3) filling block is removed from blob of viscose, so that the two sides of single layer ceramic capacitor respectively form a cavity;
(4) by blob of viscose grinding, polishing, that is, the preparation of ceramic electron element microsection is completed.
Preferably, in the step (1), when single layer ceramic capacitor to be pasted on substrate, make single layer Leaded Ceramic Disc Capacitor Two electrode layers of device perpendicular to abradant surface, when to grind the capacitance of single layer ceramic capacitor with grinding change in depth line Property variation, and proofer can easily and accurately calculate grinding depth according to the capacitance of single layer ceramic capacitor.
Preferably, in the step (1), the single layer ceramic capacitor is rectangle, and the filling block is rectangle.It selects in this way On the one hand selecting can more firmly be pasted on substrate, a line of electrode layer on the other hand can be made concordant with abradant surface, Establish electrode layer perpendicular to the linear relationship between the side length of abradant surface and the capacitance of single layer ceramic capacitor.
Preferably, in the step (1), the single layer ceramic capacitor perpendicular to the side of abradant surface length, than required The big 0.4mm or more of maximum lapping depth;The length on the single layer ceramic capacitor side concordant with abradant surface is 2~3mm;Institute State single layer ceramic capacitor with a thickness of 1~2mm.
It is highly preferred that in the step (1), the single layer ceramic capacitor perpendicular to the side of abradant surface length, than institute Big 0.4~the 1mm of maximum lapping depth needed.This selection can increase the contact area of colloid Yu single layer ceramic capacitor, prevent Only single layer ceramic capacitor is deviate from from blob of viscose in process of lapping, and whole process provides capacitance information, and prevents single layer porcelain dielectric The initial capacitance of container before the milling is too big, and the significance degree of rate of change of capacitance, makes proofer more acurrate when improving grinding Ground understands grinding depth.
Preferably, in the step (1), four edge lengths that the filling block is pasted onto the one side on substrate are 1~2mm; The height of the filling block is 0.2mm or more bigger than required maximum lapping depth, and the height of the filling block is than single layer porcelain dielectric Length small 0.2mm or more of the container perpendicular to the side of abradant surface.
When the height of filling block is 0.2mm or more bigger and more vertical than single layer ceramic capacitor than required maximum lapping depth The small 0.2mm or more of length in the side of abradant surface, it is ensured that process of lapping hollow cavity has enough depth in order to test Fixture clamps single layer ceramic capacitor, and increases the contact area of colloid Yu single layer ceramic capacitor, prevents in process of lapping Single layer ceramic capacitor is deviate from from blob of viscose.Four edge lengths that filling block is pasted onto the one side on substrate are 1~2mm, can be made Cavity is larger to be protruded into convenient for clamp ends.In filling block simultaneously with substrate and electrode layer by the side of patch length than single layer porcelain dielectric The small 0.4mm or more of length on the side concordant with abradant surface of container, can increase the contact surface of colloid Yu single layer ceramic capacitor Product, prevents single layer ceramic capacitor in process of lapping from deviating from from blob of viscose.
Preferably, in the step (1), auxiliary block is additionally provided with around the filling block;The auxiliary block by with single layer Ceramic capacitor surrounds cavity, auxiliary filling formation of lots.
It preferably, further include following steps before the step (4): exposed single layer ceramic capacitor in the cavities Electrode layer on coat conductive silver paste or conductive silver glue, and by its within the temperature range of 80~120 DEG C it is dry.
When single layer ceramic capacitor and filling block are by can not touch closely close, colloid may penetrate into single layer ceramic capacitor and In some gaps between filling block, blob of viscose clast is formed after solidification, to obstruct test fixture and single layer ceramic capacitor The contact of electrode, it is more difficult to measure capacitance.When this occurs, the conductive silver coated on exposed electrode layer in the cavities Slurry or conductive silver glue have preferable electric conductivity after dry, can be used as the intermediary that electrode layer is electrically connected with test fixture, Play the role of auxiliary electrical connection, and the influence to the capacitance of single layer ceramic capacitor can be ignored.
Preferably, the filling block is at least one of wax, cocoa butter, substitute of cocoa fat, sugar;By filling block from blob of viscose The method of middle removal are as follows: blob of viscose is put into and is dipped to filling block in 80~100 DEG C of hot water and is removed.
Meanwhile the present invention also provides a kind of ceramic electron element microsections that the preparation method is prepared.
Compared with the existing technology, the invention has the benefit that
The preparation method of ceramic electron element microsection of the invention, simultaneously by measuring samples and single layer ceramic capacitor It is embedded in blob of viscose, and respectively forms a cavity in the two sides of single layer ceramic capacitor, then measuring samples and single layer porcelain are situated between Capacitor simultaneous grinding can easily test the capacitance of single layer ceramic capacitor in process of lapping by cavity, pass through electricity Grinding depth is extrapolated in the variation of capacity, and proofer is allowed to provide the grinding depth for understanding current section and current section in ceramics Specific location in electronic component improves the quality and efficiency of check analysis.
Detailed description of the invention
Fig. 1 is the flow chart of the preparation method of ceramic electron element microsection of the invention;
Fig. 2 is the vertical view being pasted onto measuring samples, single layer ceramic capacitor and filling block side by side in embodiment 1 on substrate Schematic diagram;
Fig. 3 is the vertical view being pasted onto measuring samples, single layer ceramic capacitor and auxiliary block side by side in embodiment 2 on substrate Schematic diagram;
Fig. 4 is another on substrate to be pasted onto measuring samples, single layer ceramic capacitor and auxiliary block side by side in embodiment 2 Schematic top plan view;
Wherein, 21, electrode layer;1, measuring samples;2, single layer ceramic capacitor;3, filling block;4, substrate;5, auxiliary block.
Specific embodiment
To better illustrate the object, technical solutions and advantages of the present invention, below in conjunction with the drawings and specific embodiments pair The present invention is described further.
Embodiment 1
A kind of embodiment of ceramic electron element microsection of the present invention, the gold of ceramic electron element described in the present embodiment Mutually it is sliced, as described in Fig. 1, the preparation method is as follows:
Measuring samples, single layer ceramic capacitor and two filling blocks are pasted on substrate by step 1 side by side, make filling block Respectively by being attached to single layer ceramic capacitor two sides.
Referring to Fig.2, measuring samples 1, single layer ceramic capacitor 2 and filling block 3 can be pasted onto base side by side with double-sided adhesive On plate 4.The plane of stickup is the abradant surface of subsequent milled processed.
Measuring samples are ceramic electron element.
Single layer ceramic capacitor 2 is conventional structure, and the opposing sides of porcelain interlayer 22 is completely covered in two electrode layers 21 respectively, To generate capacitance.Single layer ceramic capacitor is rectangle, can be more firmly pasted on substrate in this way.Single layer porcelain is situated between When capacitor is pasted on substrate 4, make two electrode layers 21 of single layer ceramic capacitor perpendicular to abradant surface.Then electrode layer A line is concordant with abradant surface.Electrode layer is rectangle, can establish the side length and single layer perpendicular to abradant surface of electrode layer in this way Linear relationship between the capacitance of ceramic capacitor.
Single layer ceramic capacitor is 0.4mm or more bigger than required maximum lapping depth perpendicular to the length on the side of abradant surface, and And it is preferred, it is 0.4~1mm bigger than required maximum lapping depth.The length on the side concordant with abradant surface of single layer ceramic capacitor It can be 2~3mm, the thickness of single layer ceramic capacitor can be 1~2mm, so be convenient for single layer ceramic capacitor firmly It is pasted on substrate, and the preparation of single layer ceramic capacitor is easier.
Filling block is preferably cuboid or approximately cuboid.Two filling blocks divide by being attached to single layer ceramic capacitor two sides Not by pasting an electrode layer.Four edge lengths that filling block is pasted onto the one side on substrate can be 1~2mm, and preferred, together When with substrate and electrode layer by patch while length it is more concordant with abradant surface than single layer ceramic capacitor while length it is 0.4mm small with On.When filling block is pasted on substrate, height is 0.2mm or more bigger than required maximum lapping depth, and preferred, than list Length small 0.2mm or more of the layer ceramic capacitor perpendicular to the side of abradant surface.Filling block can be wax, the cocoa of pane shape Rouge, substitute of cocoa fat, sugar etc..
Mold is pasted on substrate by step 2, and mold surrounds measuring samples, single layer ceramic capacitor and filling block, then Colloid is injected inside toward mold, obtains blob of viscose after colloid solidification.
The shape of mold is not particularly limited.Colloid package measuring samples, single layer ceramic capacitor and the filling block of injection, Measuring samples and single layer ceramic capacitor are embedded in blob of viscose securely after solidification, only expose a side surface, as abradant surface.
Colloid can choose polyester resin, acrylic resin etc..
Step 3 removes filling block from blob of viscose, so that the two sides of single layer ceramic capacitor respectively form a cavity.
Blob of viscose can be put into hot water and be impregnated, water temperature is preferably 80~100 DEG C, more preferably uses boiling water.Make in hot water It is dissolved with lower filling block and is detached from blob of viscose.Soaking time is not particularly limited, and is substantially removed completely with filling block It is preferred, can impregnate while stir blob of viscose to accelerate the dissolution of filling block.After filling block is removed, single layer ceramic capacitor Two sides are respectively formed the cavity of a cuboid.
Step 4 grinds blob of viscose, polishing, completes the preparation of ceramic electron element microsection.
Blob of viscose can be ground with autogenous mill, the blob of viscose thickness after grinding in this way is uniform.When grinding measuring samples and Single layer ceramic capacitor is worn away simultaneously.Ceramic electron element can be examined using optical microscopy at any time in process of lapping It tests, and the capacitance of single layer ceramic capacitor can be tested, because of the side length and single layer porcelain perpendicular to abradant surface of electrode layer Dielectric capacity of condenser has proportional relation, can extrapolate single layer porcelain according to the rate of change of capacitance of single layer ceramic capacitor The depth that dielectric container is worn away, that is, current grinding depth, so as to adjust grinding progress in time.Also, works as and grind When being ground to the internal flaw or other concern positions of discovery measuring samples, it can equally know current section in measuring samples Specific location, improve the quality and efficiency of check analysis.
When testing the capacitance of single layer ceramic capacitor using LCR table, nickel subtype fixture, test probe etc. can be used and survey Fixture is tried to clamp single layer ceramic capacitor.Since single layer ceramic capacitor two sides are formed with cavity, clamp ends can be stretched Enter in cavity, consequently facilitating firm clamping single layer ceramic capacitor, contacts fixture well with electrode layer, be easy to measure capacitor Amount.
Single layer ceramic capacitor perpendicular to the side of substrate length 0.4~1mm bigger than required maximum lapping depth when, can be with The contact area for increasing colloid and single layer ceramic capacitor, prevents single layer ceramic capacitor in process of lapping from deviating from from blob of viscose, Whole process provides capacitance information, and prevents the initial capacitance of single layer ceramic capacitor before the milling too big, when improving grinding The significance degree of rate of change of capacitance allows proofer more accurately to understand grinding depth.
The height of filling block is 0.2mm or more bigger than required maximum lapping depth, and than single layer ceramic capacitor perpendicular to The small 0.2mm or more of the length on the side of abradant surface, it is ensured that process of lapping hollow cavity has enough depth in order to test clip Tool clamping single layer ceramic capacitor, and increase the contact area of colloid Yu single layer ceramic capacitor, it prevents single in process of lapping Layer ceramic capacitor is deviate from from blob of viscose.
Four edge lengths that filling block is pasted onto the one side on substrate are 1~2mm, cavity can be made larger convenient for clamp ends It protrudes into.The length on the side with substrate and electrode layer by pasting is more concordant with abradant surface than single layer ceramic capacitor simultaneously in filling block The small 0.4mm or more of the length on side, can increase the contact area of colloid Yu single layer ceramic capacitor, prevent single layer in process of lapping Ceramic capacitor is deviate from from blob of viscose.
Preferably, increase before step 4 and coat conduction on the electrode layer of single layer ceramic capacitor exposed in the cavities Silver paste or conductive silver glue and the step for drying it within the temperature range of 80~120 DEG C.When single layer ceramic capacitor and fill out When filling block by can not touch closely close, colloid may penetrate into some gaps between single layer ceramic capacitor and filling block, solidification Blob of viscose clast is formed afterwards, to obstruct the contact of test fixture with the electrode of single layer ceramic capacitor, it is more difficult to measure capacitance.When When this thing happens, the conductive silver paste or conductive silver glue coated on exposed electrode layer in the cavities, have after dry compared with Good electric conductivity, can be used as the intermediary that electrode layer is electrically connected with test fixture, play the role of auxiliary electrical connection, and right The influence of the capacitance of single layer ceramic capacitor can be ignored.
In other examples, electrode layer only can also cover porcelain interlayer in part, as long as guaranteeing one of electrode layer Side is concordant with abradant surface.
Embodiment 2
A kind of embodiment of ceramic electron element microsection of the present invention, the gold of ceramic electron element described in the present embodiment Mutually it is sliced, the preparation method is as follows:
Measuring samples, single layer ceramic capacitor and auxiliary block are pasted on substrate by step 1 side by side, make auxiliary block and list The both side surface of layer ceramic capacitor respectively crosses a cavity.
The two sides of single layer ceramic capacitor 2 can surround cavity with a substantially u-shaped block-like auxiliary block 5 respectively, such as Shown in Fig. 3;Cavity can also be surrounded with three rectangular block-like auxiliary blocks 5 respectively, as shown in Figure 4;Can also respectively with it is specific The auxiliary block of the other shapes of quantity surrounds cavity.Cavity is preferably cuboid.The material of auxiliary block can for ceramics, glass, Metal, plastics etc..It can be using measuring samples as auxiliary block.
Step 2 is put into broken wax toward cavity the inside, and heating broken wax melts wax and fill up cavity, obtains after wax liquor solidification Wax stone.
Wax can be made to melt the heating of broken wax with the lesser hot wind of wind speed with heat gun and prevent from blowing wax stone it is winged, can also be with Being placed on warm table or be put into heating in heater box for substrate melts wax.Auxiliary block is by surrounding sky with single layer ceramic capacitor Chamber plays the role of assisting wax stone molding.
Mold is pasted on substrate by step 3, and mold surrounds measuring samples, single layer ceramic capacitor, auxiliary block and wax Block obtains blob of viscose after colloid solidification then toward injection colloid inside mold.
Step 4 removes wax stone from blob of viscose, so that the two sides of single layer ceramic capacitor form cavity.
The method that wax stone is removed is same as Example 1.
Step 5 is identical as the step 4 of embodiment 1.
The wax of fusing has mobility, can fill some skies between cavity and auxiliary block and single layer ceramic capacitor Gap, so the wax stone that wax liquor obtains after solidifying is fitted closely with single layer ceramic capacitor, colloid cannot penetrate into wax stone and single layer porcelain Between dielectric container, to not have blob of viscose clast in step 4 hollow cavity, the electrode of test fixture and single layer ceramic capacitor more holds Good contact is easily formed, is easy to measure capacitance.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention rather than protects to the present invention The limitation of range is protected, although the invention is described in detail with reference to the preferred embodiments, those skilled in the art should Understand, it can be with modification or equivalent replacement of the technical solution of the present invention are made, without departing from the essence of technical solution of the present invention And range.

Claims (10)

1. a kind of preparation method of ceramic electron element microsection, which comprises the steps of:
(1) measuring samples, single layer ceramic capacitor and two filling blocks are pasted on substrate side by side, described two filling blocks point Not by being attached to single layer ceramic capacitor two sides;
(2) mold is pasted on substrate, mold surrounds measuring samples, single layer ceramic capacitor and filling block, then toward mold Colloid is injected in the inside, obtains blob of viscose after colloid solidification;
(3) filling block is removed from blob of viscose, so that the two sides of single layer ceramic capacitor respectively form a cavity;
(4) by blob of viscose grinding, polishing, that is, the preparation of ceramic electron element microsection is completed.
2. the preparation method of ceramic electron element microsection as described in claim 1, which is characterized in that the step (1) In, when single layer ceramic capacitor to be pasted on substrate, make two electrode layers of single layer ceramic capacitor perpendicular to abradant surface.
3. the preparation method of ceramic electron element microsection as described in claim 1, which is characterized in that the step (1) In, the single layer ceramic capacitor is rectangle, and the filling block is rectangle.
4. the preparation method of ceramic electron element microsection as described in claim 1, which is characterized in that the step (1) In, the single layer ceramic capacitor perpendicular to the side of abradant surface length, it is 0.4mm or more bigger than required maximum lapping depth; The length on the single layer ceramic capacitor side concordant with abradant surface is 2~3mm;The single layer ceramic capacitor with a thickness of 1 ~2mm.
5. the preparation method of ceramic electron element microsection as claimed in claim 4, which is characterized in that the step (1) In, the single layer ceramic capacitor perpendicular to the side of abradant surface length, it is 0.4~1mm bigger than required maximum lapping depth.
6. the preparation method of ceramic electron element microsection as described in claim 1, which is characterized in that the step (1) In, four edge lengths that the filling block is pasted onto the one side on substrate are 1~2mm;The height of the filling block than it is required most The big grinding big 0.2mm or more of depth, the height of the filling block is than single layer ceramic capacitor perpendicular to the length on the side of abradant surface Small 0.2mm or more.
7. the preparation method of ceramic electron element microsection as described in claim 1, which is characterized in that the step (1) In, auxiliary block is additionally provided with around the filling block;The auxiliary block is by surrounding cavity, auxiliary filling with single layer ceramic capacitor Formation of lots.
8. the preparation method of ceramic electron element microsection as described in claim 1, which is characterized in that in the step (4) further include following steps before: in the cavities on the electrode layer of exposed single layer ceramic capacitor coat conductive silver paste or Conductive silver glue, and drying within the temperature range of 80~120 DEG C by it.
9. the preparation method of ceramic electron element microsection as described in claim 1, which is characterized in that the filling block is At least one of wax, cocoa butter, substitute of cocoa fat, sugar;The method that filling block is removed from blob of viscose are as follows: blob of viscose is put into 80 Filling block is dipped in~100 DEG C of hot water to be removed.
10. a kind of ceramic electron element microsection being prepared by any one of claim 1~9 preparation method.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111257071A (en) * 2020-01-17 2020-06-09 胜科纳米(苏州)有限公司 Preparation method of sample for dynamic secondary ion mass spectrometer and prepared sample

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2615637Y (en) * 2003-04-04 2004-05-12 上海美维电子有限公司 Dielectric thickness measuring apparatus
JP2009098088A (en) * 2007-10-19 2009-05-07 Jeol Ltd Sample preparing method
CN103076216A (en) * 2012-12-28 2013-05-01 广州杰赛科技股份有限公司 Preparation method, grinding method and device for microsection sample
CN206247066U (en) * 2016-12-14 2017-06-13 东莞市科友企业创新孵化器有限公司 A kind of environmentally friendly anti-dazzle long-life LED
CN108081116A (en) * 2008-06-20 2018-05-29 伊利诺斯工具制品有限公司 Improved polisher lapper
CN108237468A (en) * 2016-12-26 2018-07-03 台湾积体电路制造股份有限公司 Reduced down in thickness device and reduced down in thickness method
CN109870336A (en) * 2019-01-31 2019-06-11 长江存储科技有限责任公司 Semiconductor test system and its test method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2615637Y (en) * 2003-04-04 2004-05-12 上海美维电子有限公司 Dielectric thickness measuring apparatus
JP2009098088A (en) * 2007-10-19 2009-05-07 Jeol Ltd Sample preparing method
CN108081116A (en) * 2008-06-20 2018-05-29 伊利诺斯工具制品有限公司 Improved polisher lapper
CN103076216A (en) * 2012-12-28 2013-05-01 广州杰赛科技股份有限公司 Preparation method, grinding method and device for microsection sample
CN206247066U (en) * 2016-12-14 2017-06-13 东莞市科友企业创新孵化器有限公司 A kind of environmentally friendly anti-dazzle long-life LED
CN108237468A (en) * 2016-12-26 2018-07-03 台湾积体电路制造股份有限公司 Reduced down in thickness device and reduced down in thickness method
CN109870336A (en) * 2019-01-31 2019-06-11 长江存储科技有限责任公司 Semiconductor test system and its test method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111257071A (en) * 2020-01-17 2020-06-09 胜科纳米(苏州)有限公司 Preparation method of sample for dynamic secondary ion mass spectrometer and prepared sample

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