CN110444542A - A kind of electrostatic discharge protection structure of power pin - Google Patents
A kind of electrostatic discharge protection structure of power pin Download PDFInfo
- Publication number
- CN110444542A CN110444542A CN201910734503.4A CN201910734503A CN110444542A CN 110444542 A CN110444542 A CN 110444542A CN 201910734503 A CN201910734503 A CN 201910734503A CN 110444542 A CN110444542 A CN 110444542A
- Authority
- CN
- China
- Prior art keywords
- electrostatic discharge
- discharge protection
- power pin
- power supply
- pin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
Abstract
The invention discloses a kind of electrostatic discharge protection structures of power pin; in the power pin of the clamp structure of driving ESD NMOS protection pipe for being formed by connecting by power supply, resistance, capacitor and phase inverter; the electrostatic discharge protection structure further include: a PMOS electrostatic discharge protection pipe, the protected power pin are connected to I O ring power supply by the PMOS electrostatic discharge protection pipe.Protected power pin is connected to I O ring power supply by joined a PMOS electrostatic discharge protection pipe; it is formed from by two Electro-static Driven Comb paths of protection power source pin to I O ring power supply and Ground; electrostatic in protected power pin can be discharged from I O ring power supply and two paths of Ground, can play better electrostatic protective function.
Description
Technical field
The present invention relates to electrostatic protection field more particularly to a kind of electrostatic discharge protection structures of power pin.
Background technique
ESD (Electro-Static discharge, i.e. Electro-static Driven Comb) structure such as Fig. 1 of conventional power source pin (PAD)
Shown, which is that resistance capacitance adds phase inverter, drives the clamp structure of ESD NMOS protection pipe.This electrostatic
Discharge protection structure the problem is that: in circuit by the electrostatic on protection power source pin only by mono- paths of Ground discharge,
When generation electrostatic is more, electrostatic protection is bad.
Summary of the invention
Based on the problems of prior art, the object of the present invention is to provide a kind of electrostatic discharge protections of power pin
Structure in the electrostatic discharge protection structure that can solve existing power pin, is only discharged by mono- paths of Ground, is generated quiet
When electricity is more, the bad problem of electrostatic protection.
The purpose of the present invention is what is be achieved through the following technical solutions:
Embodiment of the present invention provides a kind of electrostatic discharge protection structure of power pin, for by resistance, capacitor and anti-
In the power pin of the clamp structure for the driving ESD NMOS protection pipe that phase device is formed by connecting, the electrostatic discharge protection structure is also
It include: a PMOS electrostatic discharge protection pipe, the protected power pin passes through the PMOS electrostatic discharge protection Guan Lian
It is connected to I O ring power supply.
As seen from the above technical solution provided by the invention, image sensor package knot provided in an embodiment of the present invention
Structure, it has the advantage that:
Protected power pin being connected to I O ring power supply by joined a PMOS electrostatic discharge protection pipe, being formed
Electrostatic from protected power pin to two Electro-static Driven Comb paths of I O ring power supply and Ground, in protected power pin
It can be discharged from I O ring power supply and two paths of Ground, better electrostatic protective function can be played.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, required use in being described below to embodiment
Attached drawing be briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for this
For the those of ordinary skill in field, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is the schematic diagram of the electrostatic discharge protection structure for the power pin that the prior art provides；
Fig. 2 is the schematic diagram of the electrostatic discharge protection structure of power pin provided in an embodiment of the present invention；
In the figure, it is marked as 1- power supply；2-PMOS electrostatic discharge protection pipe.
Specific embodiment
Below with reference to particular content of the invention, technical solution in the embodiment of the present invention is clearly and completely retouched
It states, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based on the present invention
Embodiment, every other embodiment obtained by those of ordinary skill in the art without making creative efforts,
Belong to protection scope of the present invention.The content being not described in detail in the embodiment of the present invention belongs to professional and technical personnel in the field
The well known prior art.
As shown in Fig. 2, the embodiment of the present invention provides a kind of electrostatic discharge protection structure of power pin, for by resistance,
In the power pin of the clamp structure for the driving ESD NMOS protection pipe that capacitor and phase inverter (i.e. Invertor) are formed by connecting,
The electrostatic discharge protection structure further include: a PMOS electrostatic discharge protection pipe, the protected power pin pass through described
PMOS electrostatic discharge protection pipe is connected to I O ring power supply (i.e. DVDDIO).
Above-mentioned electrostatic discharge protection structure, the voltage of the protected power pin are not higher than the voltage of I O ring power supply.
In structure of the invention, protected power pin is connected to due to being provided with a PMOS ESD protection pipe
DVDDIO discharges the electrostatic on protected power supply (Power) pin from DVDDIO and two paths of Ground, can
To play better electrostatic protective function.
The embodiment of the present invention is specifically described in further detail below.
Referring to fig. 2, the electrostatic discharge protection structure of power pin of the invention is compared with traditional structure by joined one
Protected power pin is connected to I O ring power supply (i.e. DVDDIO) by a PMOS ESD protection pipe, power supply protected in this way
Electrostatic on (i.e. Power) pin can be discharged from DVDDIO and two paths of Ground, can preferably reach electrostatic protection
Effect, using the voltage of the voltage not above DVDDIO of protected power supply (Power) pin need to be limited.The Electro-static Driven Comb
Protection structure has reached better power pin electrostatic protection effect in a relatively simple manner.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
Within the technical scope of the present disclosure, any changes or substitutions that can be easily thought of by anyone skilled in the art,
It should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with the protection model of claims
Subject to enclosing.
Claims (2)
1. a kind of electrostatic discharge protection structure of power pin, the driving ESD for being formed by connecting by resistance, capacitor and phase inverter
In the power pin of the clamp structure of NMOS protection pipe, which is characterized in that the electrostatic discharge protection structure further include: one
PMOS electrostatic discharge protection pipe, the protected power pin are connected to I O ring electricity by the PMOS electrostatic discharge protection pipe
Source.
2. the electrostatic discharge protection structure of power pin according to claim 1, which is characterized in that the protected electricity
The voltage of source capsule foot is not higher than the voltage of I O ring power supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910734503.4A CN110444542A (en) | 2019-08-09 | 2019-08-09 | A kind of electrostatic discharge protection structure of power pin |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910734503.4A CN110444542A (en) | 2019-08-09 | 2019-08-09 | A kind of electrostatic discharge protection structure of power pin |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110444542A true CN110444542A (en) | 2019-11-12 |
Family
ID=68434359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910734503.4A Pending CN110444542A (en) | 2019-08-09 | 2019-08-09 | A kind of electrostatic discharge protection structure of power pin |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110444542A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5682047A (en) * | 1995-06-07 | 1997-10-28 | Lsi Logic Corporation | Input-output (I/O) structure with capacitively triggered thyristor for electrostatic discharge (ESD) protection |
| US20060044714A1 (en) * | 2004-08-27 | 2006-03-02 | Shiao-Shien Chen | Substrate-triggered esd circuit by using triple-well |
| US20060087788A1 (en) * | 2004-09-15 | 2006-04-27 | Atmel Nantes Sa | Dual-supply electronic circuit with means for protection against breakdowns, and corresponding protection means |
| US20070152712A1 (en) * | 2005-12-30 | 2007-07-05 | Dongbu Electronics Co., Ltd. | I/O cell capable of finely controlling drive strength related application |
| CN104269399A (en) * | 2014-08-12 | 2015-01-07 | 无锡市晶源微电子有限公司 | Antistatic protection circuit |
| CN108682673A (en) * | 2018-05-26 | 2018-10-19 | 丹阳恒芯电子有限公司 | A kind of electrostatic discharge protective circuit applied to radio circuit |
-
2019
- 2019-08-09 CN CN201910734503.4A patent/CN110444542A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5682047A (en) * | 1995-06-07 | 1997-10-28 | Lsi Logic Corporation | Input-output (I/O) structure with capacitively triggered thyristor for electrostatic discharge (ESD) protection |
| US20060044714A1 (en) * | 2004-08-27 | 2006-03-02 | Shiao-Shien Chen | Substrate-triggered esd circuit by using triple-well |
| US20060087788A1 (en) * | 2004-09-15 | 2006-04-27 | Atmel Nantes Sa | Dual-supply electronic circuit with means for protection against breakdowns, and corresponding protection means |
| US20070152712A1 (en) * | 2005-12-30 | 2007-07-05 | Dongbu Electronics Co., Ltd. | I/O cell capable of finely controlling drive strength related application |
| CN104269399A (en) * | 2014-08-12 | 2015-01-07 | 无锡市晶源微电子有限公司 | Antistatic protection circuit |
| CN108682673A (en) * | 2018-05-26 | 2018-10-19 | 丹阳恒芯电子有限公司 | A kind of electrostatic discharge protective circuit applied to radio circuit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20191112 |
|
| RJ01 | Rejection of invention patent application after publication |