CN110444484A - Copper post cushion block and preparation method thereof with stress buffer and anisotropic conductive - Google Patents
Copper post cushion block and preparation method thereof with stress buffer and anisotropic conductive Download PDFInfo
- Publication number
- CN110444484A CN110444484A CN201910703223.7A CN201910703223A CN110444484A CN 110444484 A CN110444484 A CN 110444484A CN 201910703223 A CN201910703223 A CN 201910703223A CN 110444484 A CN110444484 A CN 110444484A
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- Prior art keywords
- copper wire
- mold
- copper
- insulation
- cushion block
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/111—Manufacture and pre-treatment of the bump connector preform
- H01L2224/1111—Shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13075—Plural core members
- H01L2224/13076—Plural core members being mutually engaged together, e.g. through inserts
Abstract
The present invention relates to power electronic device encapsulation technology fields, can be used for the novel copper post cushion block technical solution of the encapsulation of two-side radiation/plane electronic device and module for proposition, realize stress buffer and anisotropic conductive.Thus, the technical solution adopted by the present invention is that, copper post cushion block production method with stress buffer and anisotropic conductive, the insulation copper wire that several diameters are 0.3~0.5mm is placed in round or rectangular half mold, when insulation copper wire is put into mold, make to insulate copper wire beyond one segment length of mold front/rear end, the length beyond die nose face is greater than the length equal to mold itself；When the insulation copper wire of merging is full of mold, half-open mold is closed, will exceed in the insulation copper wire merging polymer adhesive in die nose face, is made in insulated copper silk table face and every two eradication edge copper wire interval with adhesive.Present invention is mainly applied to power electronic devices to encapsulate occasion.
Description
Technical field
The present invention relates to power electronic device encapsulation technology fields, and in particular to has stress buffer and anisotropic conductive
Copper post cushion block and preparation method thereof.
Background technique
With the development of power electronics technology, electronic device is towards high-frequency, high density, high power and high temperature application
Direction develop.The single-face packaging structure radiating efficiency that traditional semiconductor power device uses is not high, the internal heat generated
Amount can only be discharged from the lower surface of conductor power chips.In recent years, the concern that double-faced packaging structure is increasingly arrived,
Because it can greatly improve the radiating efficiency of semiconductor power device.The encapsulating structure can make in semiconductor power device
The heat that portion generates is discharged from the upper and lower surfaces both direction of conductor power chips.The double-faced packaging structure of mainstream is adopted
With metal pole interconnection, metal pole interconnection has the following characteristics that the current-carrying capability of metal column allows by force through biggish electric current, but
Each material thermal expansion coefficient mismatch, which will lead to, in module generates biggish thermal stress on chip, so as to cause Module Fail；Core
Piece upper and lower surface needs additional metalized.
In order to enable chip upper and lower surface to interconnect with metal, need to plate the coat of metal on its surface.Metal oxidation half
Conductor field-effect tube (MOSFET) chip upper surface is there are source electrode and grid, table on insulated gate bipolar transistor (IGBT) chip
There are emitters and gate pole in face, insulated from each other between source electrode and grid, emitter and gate pole.The area of the coat of metal and grid
Size is related, and the bigger plate areas of grid size is smaller, then the size for the metal column of connection is smaller, and the size of metal column subtracts
It is small to reduce the difficulty for allowing the size by electric current and operation being increased to a certain degree.When the grid of chip is not located at chip
Corner when, in order to increase as far as possible its allow by current value just need to design the more complicated gold of machining shape structure
Belong to column, on the one hand increases the difficulty of operation, on the other hand also will increase cost.
It needs to realize two-sided structure using multiple metal columns in the module of independent control between in parallel and chip in multi-chip,
However it is all while cooling to cannot be guaranteed each solder joint in multiple spot welding, even if being solidified using identical material and solder in solder joint
When can generate a downward convergent force, but each solder joint is not to solidify simultaneously, this will lead to the region that solder joint first solidifies
Can first be offset downward by convergent force, and other solder joints solidification when will receive solidified solder joint inhibition make its to
Under offset reduce, eventually lead between direct copper-clad base plate (DBC) up and down generate certain angle deviation.
Summary of the invention
In order to overcome the deficiencies of the prior art, the present invention is directed to propose can be used for two-side radiation/plane electronic device and mould
The novel copper post cushion block technical solution of the encapsulation of block realizes stress buffer and anisotropic conductive.For this purpose, the skill that the present invention takes
Art scheme is that several diameters are 0.3~0.5mm by the copper post cushion block production method with stress buffer and anisotropic conductive
The merging of insulation copper wire is round or rectangular half mold in, will insulation copper wire when being put into mold, the copper wire that make to insulate is beyond mould
Has one segment length of front/rear end, the length beyond die nose face is greater than the length equal to mold itself；When the insulation of merging
When copper wire is full of mold, half-open mold is closed, will exceed in the insulation copper wire merging polymer adhesive in die nose face,
Make in insulated copper silk table face and every two eradication edge copper wire interval with adhesive；Then the insulation beyond mold rear end face is caught
Copper wire backward pull until with adhesive insulation copper wire position and mold in；Mold and its interior insulation copper wire are heated to 80
~100 DEG C, 24 hours are kept the temperature, insulation copper wire is finally processed into required height.
Chip is welded on lower copper-clad base plate, the copper post cushion block is welded on chip upper surface, upper copper-clad base plate and copper
The another side of column cushion block is welded to connect, and forms two-side radiation modular structure.
Copper post cushion block with stress buffer and anisotropic conductive, the insulation copper wire for being 0.3~0.5mm by several diameters
It constitutes, has adhesive in insulated copper silk table face and every two eradication edge copper wire interval, insulation copper wire is mutually solid in radial direction
It is connected together, it is overall at column after affixed.
The features of the present invention and beneficial effect are:
(1) when substituting the metal column in two-sided module with copper post cushion block, copper wire has good flexibility, energy compared with metal column
The stress being enough effectively reduced on chip is to increase the reliability of module.
(2) when substituting the metal column in two-sided module with copper post cushion block, the area of the coat of metal can increase to the maximum extent
Greatly.The area of the coat of metal is that the area of entire chip subtracts the interval between grid and source electrode, and can be carved by design
It loses the decorative pattern of DBC substrate to draw the grid of chip and source electrode to realize, does so and avoid wire bonding to reduce entire
The parasitic inductance of module.3 explanation of specific structure attached drawing.
(3) gold in two-sided module is substituted between and chip in parallel in multi-chip in the module of independent control with copper post cushion block
It, can be by the reduced number of metal column to original half when belonging to column.4 explanation of specific structure attached drawing.
Detailed description of the invention:
Fig. 1 is half open form square dies schematic diagram.
Fig. 2 is that copper wire is located at the structural schematic diagram in mold.
Fig. 3 is the structural schematic diagram that copper post cushion block maximizes coat of metal area.
Fig. 4 is copper post cushion block demultiplication metal column number structural schematic diagram.
Wherein: DBC substrate under the upper DBC substrate of 1- square dies, 2- insulated copper wire, 3-, 4-, 5, chip (MOSFET,
IGBT, using MOSFET as explanation), 6- copper wire cushion block, 7,8- chip.
Specific embodiment
In view of above situation, the present invention disclose it is a kind of based on insulation copper wire achievable stress buffer and anisotropy lead
The copper post cushion block preparation method of electricity, the novel copper post cushion block can be used for the encapsulation of two-side radiation/plane electronic device and module,
One is bonded in using epoxy-based polymer adhesive by the insulation copper wire that is about 0.3~0.5mm by several diameters
The copper wire for forming specific shape is acted, copper wire is then processed into required height to substitute the metal column in two-sided module.
Technical solution of the present invention is as follows:
A kind of copper post cushion block preparation method of achievable stress buffer and anisotropic conductive based on the copper wire that insulate；If will
The insulation copper wire that dry diameter is about 0.3~0.5mm is placed in round or rectangular half mold.The present invention is using square dies as saying
It is bright.When insulation copper wire is put into mold, the copper wire that make to insulate exceeds die nose face beyond one segment length of mold front/rear end
Length be greater than the length equal to mold itself.When the insulation copper wire of merging is full of mold, half-open mold is closed.It will
In insulation copper wire merging polymer adhesive beyond die nose face, make insulated copper silk table face and every two eradication edge copper wire interval
In have adhesive.Then catch the insulation copper wire beyond mold rear end face backward pull until have adhesive insulated copper
In silk position and mold, the purpose done so is on the one hand to remove extra adhesive, is on the other hand in order to insulated copper
Silk moulding.After completing aforesaid operations, mold and its interior insulation copper wire are heated to 80~100 DEG C, keep the temperature 24 hours.Then will
Copper wire is processed into required height to substitute the metal column in two-sided module.
With reference to the accompanying drawing, it elaborates to a specific embodiment of the invention.
A kind of copper post cushion block preparation method of achievable stress buffer and anisotropic conductive based on the copper wire that insulate, specifically
Include the following steps:
Step 1: the insulation copper wire that several diameters are about 0.3~0.5mm is placed in half mold.The present invention is with rectangular
For mold as explanation, square dies are as shown in Figure 1.When insulation copper wire is put into mold, the copper wire that make to insulate is beyond before mold
One segment length of rear end face, the length beyond die nose face are greater than the length equal to mold itself.When the insulation copper wire of merging
When full of mold, half-open mold is closed.
Step 2: will exceed in the insulation copper wire merging epoxy-based polymer adhesive in die nose face, make to insulate
Has adhesive in copper wire surface and every two eradication edge copper wire interval.
Step 3: catch the insulation copper wire beyond mold rear end face backward pull until have adhesive insulation copper wire position
In mold, the purpose done so is on the one hand to remove extra adhesive, is on the other hand to give insulation copper wire modeling
Shape.It is as shown in Figure 2 after the completion of operation.
Step 4: mold and its interior insulation copper wire are heated to 80~100 DEG C, 24 hours are kept the temperature.
Step 5: copper wire is processed into required height to substitute the metal column in two-sided module.
Fig. 3 is the structural schematic diagram that copper post cushion block maximizes coat of metal area.The chip in two-side radiation modular structure
Upper surface need to plate the interconnection that one layer of coat of metal is just able to achieve chip upper surface and metal column.It is general only to be splashed on source electrode
It penetrates the coat of metal and then is guided to source electrode on another piece of DBC substrate using metal column, and grid generally uses the side of wire bonding
Formula guides to the electrode district of DBC substrate.In order to cooperate the operation of wire bonding instrument, the area of the coat of metal will be generally less than source electrode
Region area.Thus will limit the area of metal column, so as to cause its allow by maximum current value reduction.If using copper
Column cushion block substitutes the metal column in traditional two-side radiation module, then can greatly increase the area of the coat of metal.Copper post cushion block is used for
Longitudinal conducting is able to achieve in two-side radiation module, and insulation is not so that transverse direction is led between every two copper wire
It is logical, and the decorative pattern of upper DBC substrate can be etched by design to realize the extraction of grid, so as to avoid wire bonding.Such as
Shown in Fig. 3, S, G are respectively the source electrode and grid of MOSFET chip.At this point, the area that the area of the coat of metal is entire chip subtracts
Go to the interval between grid and source electrode.Chip is welded on lower DBC substrate, copper post cushion block is welded on chip upper surface, so
The another side of upper DBC and copper post cushion block are welded again afterwards.At this point, three of chip extremely corresponding regions are as shown in the figure.
Fig. 4 is copper post cushion block demultiplication metal column number structural schematic diagram.It needs in the module of multi-chip parallel connection using more
A metal column realizes that two-sided structure, the planarization of the quantity of the metal column welded more multimode are more difficult to control.Use copper post pad
Block substitute multi-parallel chip double-side modular structure in metal column when can demultiplication metal column quantity.7,8 be in parallel two in Fig. 4
A chip needs two metal columns if independent using the source electrode of metal pole interconnection and two chips, using copper wire cushion block because of its cross
It on direction and is not turned on, so only needing the source electrode of a copper wire cushion block and two chips independent of one another.
Claims (3)
1. a kind of copper post cushion block production method with stress buffer and anisotropic conductive, characterized in that be by several diameters
In the insulation copper wire merging circle of 0.3~0.5mm or rectangular half mold, when the copper wire that will insulate is put into mold, to make to insulate
Copper wire exceeds one segment length of mold front/rear end, and the length beyond die nose face is greater than the length equal to mold itself；When
When the insulation copper wire of merging is full of mold, half-open mold is closed, will exceed the insulation copper wire merging polymerization in die nose face
In object adhesive, make in insulated copper silk table face and every two eradication edge copper wire interval with adhesive；Then it catches beyond mold
The insulation copper wire of rear end face backward pull until with adhesive insulation copper wire position and mold in；By mold and its interior insulation
Copper wire is heated to 80~100 DEG C, keeps the temperature 24 hours, and insulation copper wire is finally processed into required height.
2. the copper post cushion block production method with stress buffer and anisotropic conductive as described in claim 1, characterized in that
Chip is welded on lower copper-clad base plate, the copper post cushion block is welded on chip upper surface, upper copper-clad base plate and copper post cushion block
Another side is welded to connect, and forms two-side radiation modular structure.
3. the copper post cushion block production method with stress buffer and anisotropic conductive as described in claim 1, characterized in that
Copper post cushion block with stress buffer and anisotropic conductive is made of, absolutely the insulation copper wire that several diameters are 0.3~0.5mm
Has adhesive in edge copper wire surface and every two eradication edge copper wire interval, insulation copper wire is fixedly connected with each other in radial direction one
It rises, it is overall at column after affixed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910703223.7A CN110444484B (en) | 2019-07-31 | 2019-07-31 | Copper column cushion block with stress buffering and anisotropic conductivity and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910703223.7A CN110444484B (en) | 2019-07-31 | 2019-07-31 | Copper column cushion block with stress buffering and anisotropic conductivity and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
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| CN110444484A true CN110444484A (en) | 2019-11-12 |
| CN110444484B CN110444484B (en) | 2021-05-14 |
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2019
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|---|---|---|---|---|
| JPS58205821A (en) * | 1982-05-26 | 1983-11-30 | Mishima Kosan Co Ltd | Detector for molten steel level in mold for continuous casting |
| US6237223B1 (en) * | 1999-05-06 | 2001-05-29 | Chip Coolers, Inc. | Method of forming a phase change heat sink |
| JP2009066649A (en) * | 2007-09-18 | 2009-04-02 | Seino Kinzoku Kk | Tubular material composed of copper alloy continuous-casting product, and mold for casting the same |
| US20110033986A1 (en) * | 2008-07-10 | 2011-02-10 | Mitsubishi Electric Corporation | Method of manufacturing a semiconductor device having a semiconductor chip and resin sealing portion |
| CN102074541A (en) * | 2010-11-26 | 2011-05-25 | 天水华天科技股份有限公司 | Carrier-free pin-free grid-array IC (Integrated Circuit) chip packaging part and production method thereof |
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| CN104325651A (en) * | 2014-10-09 | 2015-02-04 | 上海复合材料科技有限公司 | Preparation method for carbon fiber/copper wire mixed braided body reinforced resin matrix composite material |
| CN104517676A (en) * | 2014-12-16 | 2015-04-15 | 大连沈特电缆有限公司 | Cold-resistant and twisting-resistant cable with copper-clad aluminum core |
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| CN110444484B (en) | 2021-05-14 |
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