CN110444458A - A kind of method for visualizing of the ion concentration distribution of detection device, ion implantation equipment and ion beam profile - Google Patents
A kind of method for visualizing of the ion concentration distribution of detection device, ion implantation equipment and ion beam profile Download PDFInfo
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- CN110444458A CN110444458A CN201910735926.8A CN201910735926A CN110444458A CN 110444458 A CN110444458 A CN 110444458A CN 201910735926 A CN201910735926 A CN 201910735926A CN 110444458 A CN110444458 A CN 110444458A
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- ion beam
- ion
- concentration distribution
- detection device
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
- G01T1/2914—Measurement of spatial distribution of radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- Chemical & Material Sciences (AREA)
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- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
Abstract
The present invention provides a kind of method for visualizing of the ion concentration distribution of detection device, ion implantation equipment and ion beam profile, detection device is used to detect the ion concentration distribution in ion beam profile direction, it include: detection screen, the side that the detection screen can receive the ion beam irradiation is coated with phosphor material；And processor, shield with the detection and is electrically connected, the phosphorescence that can be generated according to the phosphor material because receiving the ion beam irradiation responds, obtain the ion concentration distribution of the ion beam profile, the characteristic of phosphorescence can be issued under electromagnetic radiation and ion irradiation excitation using phosphor material, the phosphorescence response generated according to phosphor material because receiving ion beam irradiation, obtain the ion concentration distribution of ion beam profile, its structure is simple, and intuitive phosphorescence response image can be obtained for analyzing or calculating, it provides convenience for the ion concentration distribution detection of ion beam profile.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly it relates to which a kind of detection device, ion implantation are set
The method for visualizing of standby and ion beam profile ion concentration distribution.
Background technique
In existing semi-conductor electricity depositing process, a kind of widely applied technology of material surface modifying of ion implantation technique,
Basic principle is: being incident in material with the ion beam with energy, the atom or molecule in ion beam and material occur one
The effect of serial physical and chemistry, incident ion gradually off-energy, finally rests in material, and cause material surface at
Part, structure and performance change, to optimize material surface property, in the prior art, are usually mentioned by ion implantation equipment
For ion source, the ion generated by ion source is accelerated then to be irradiated to wafer by ion beam to form ion beam
Whole surface is doped whole wafer, to achieve the purpose that change wafer electric conductivity, the concentration distribution of ion beam profile
Played a crucial role whether uniformly with the performance of the wafer of subsequent preparation, existing detection device to ion beam profile
Concentration distribution detection and calculation it is complex.
Therefore, it is necessary to be improved existing detection device.
Summary of the invention
In order to solve the above problem in the prior art, that is, provide a kind of ion concentration that can obtain ion beam profile point
The detection device of cloth.
Detection device provided by the present invention, for detecting the ion concentration distribution in ion beam profile direction, comprising: detection
Screen, the side that detection screen can receive ion beam irradiation are coated with phosphor material；And processor, it is electrically connected with detection screen, energy
The enough phosphorescence generated according to phosphor material because receiving ion beam irradiation responds, and obtains the ion concentration distribution of ion beam profile.
The present invention can issue the characteristic of phosphorescence using phosphor material under electromagnetic radiation and ion irradiation excitation, according to
The phosphorescence response that phosphor material is generated because receiving ion beam irradiation, obtains the ion concentration distribution of ion beam profile, structure
Simply, and intuitive phosphorescence response image can be obtained for analyzing or calculating, is that the ion concentration distribution of ion beam profile is examined
Survey is provided convenience.
In more excellent technical solution of the invention, detection device further includes energy adjusting pipe, and energy adjusting pipe is set to inspection
Screen is surveyed along the upstream side of direction of beam transport, in the energy adjusting to particular range by ion beam.
In more excellent technical solution of the invention, detection screen and the transmission direction of ion beam are vertically arranged, and are detected on screen
The spreading area of phosphor material is more than the area of section of ion beam.
In more excellent technical solution of the invention, the image information for detecting screen is divided into several pixels, processor
According to the brightness of each pixel, determine ion beam in the ion concentration of corresponding region.
In more excellent technical solution of the invention, phosphor material is sulfide, oxide, II-IV and IV-V race's chemical combination
One of object, rare earth luminescent material are a variety of.
In order to solve the above problem in the prior art, the present invention also provides a kind of ion implantation equipment, ion implantations
Equipment has detection device above.
In more excellent technical solution of the invention, ion implantation equipment further includes Automatic Optimal unit, Automatic Optimal unit
Automatic Optimal can be carried out to ion beam according to the testing result of detection device.
The present invention provides an ion implantation equipments, can be according to the dense of the ion beam profile that detection device detects
It spends distributed data and Automatic Optimal is carried out to ion beam, improve the Efficiency and accuracy of ion beam optimization.
In order to solve the above problem in the prior art, the present invention also provides the ion concentrations of a kind of ion beam profile point
The method for visualizing of cloth, comprising the following steps: the irradiation of ion beam is received using the detection screen for being coated with phosphor material；According to phosphorus
The phosphorescence response that luminescent material is generated because receiving ion beam irradiation, obtains the ion concentration distribution of ion beam profile.
It is further comprising the steps of in more excellent technical solution of the invention: by the energy adjusting of ion beam to particular range
It is interior.
It is further comprising the steps of in more excellent technical solution of the invention: in same image, to show ion beam complete section face
Ion concentration distribution.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the detection device of the more excellent embodiment of the present invention；
Fig. 2 is the structural schematic diagram of the detection device in second embodiment of the invention；
Fig. 3 is the structural schematic diagram of the detection device in third embodiment of the invention.
Detailed description of the invention: 100- detection device；200- detection device；300- detection device；1- detection screen；2- processor；3-
Energy adjusting pipe；4- phosphor material；5- ion beam；6- image acquiring device.
Specific technical solution
The preferred technical solution of the present invention described with reference to the accompanying drawings.It will be apparent to a skilled person that this
A little technical solutions are used only for explaining technical principle of the invention, it is not intended that limit the scope of the invention.This field skill
Art personnel, which can according to need, adjusts it, to adapt to specific application.
It should be noted that in the description of the preferred embodiment of the present invention, term " on ", "lower", "left", "right",
The direction of the instructions such as "front", "rear", "vertical", "horizontal", "inner", "outside" or the term of positional relationship are based on the figure
Direction or positional relationship, this is intended merely to facilitate description, rather than indication or suggestion described device or component part must have
There is specific orientation, be constructed and operated in a specific orientation, therefore is not considered as limiting the invention.
As shown in Figure 1, detection device 100 provided by the optimal technical scheme of the present embodiment, comprising: detection screen 1 and inspection
Survey screen 1 electrically connected processing device 2 and energy adjusting pipe 3, the side of detection screen 1 is coated with phosphor material 4, with for receive from
The irradiation of beamlet 5, energy adjusting pipe 3 are set to detection screen 1 along the upstream side of 5 transmission direction of ion beam, are used for ion beam 3
Energy adjusting to particular range in, to obtain the ion concentration distribution of 5 section of ion beam.
Specifically, energy adjusting pipe 3 can reduce pipe for energy amplifier tube or energy, can be by the energy of ion beam 5
It adjusts to particular range, to prevent from damaging detection screen 1 because the energy of ion beam 5 is excessive, and prevents the energy because of ion beam 5
It is too small and cause phosphorescence response weaker and ion concentration distribution is caused to be difficult to obtain.
Specifically, phosphor material 5 be sulfide, oxide, II-IV and IV-V compounds of group, rare earth luminescent material in
It is one or more.
In the more excellent technical solution of the present embodiment, detection screen 1 and the transmission direction of ion beam 5 are vertically arranged, and are detected
The spreading area of phosphor material is more than the area of section of ion beam on screen, to be efficiently received ion beam 5 and save space, is obtained
The complete section face ion concentration distribution of ion beam 5；In some embodiments, the transmission direction of detection screen 1 and ion beam 5 can also be in
Other angle settings need to only ensure that ion beam 5 can be detected screen 1 and all receive.
It should be noted that although the present embodiment gives the ion concentration distribution acquisition methods in 5 complete section face of ion beam, but
Not limitation of the invention, user's both ion concentration in available 5 complete section face of ion beam under technical inspiration of the invention
Distribution, can also obtain the ion concentration distribution of the ion beam 5 of specified section according to demand.
The present embodiment can issue the characteristic of phosphorescence using phosphor material 4 under electromagnetic radiation and ion irradiation excitation,
According to the phosphorescence response that phosphor material 4 generates due to receiving ion beam 5 and irradiating, the ion concentration distribution of 5 section of ion beam is obtained.
The present embodiment is said according to the specific method that phosphorescence responds the concentration distribution for obtaining 5 section of ion beam below
Bright, in the optimal technical scheme of the present embodiment, the image information of detection screen 1 is divided into several pixels (not shown),
Processor 2 determines ion beam 5 in the ion concentration of corresponding region, detection device 100 further includes according to the brightness of each pixel
Image acquiring device 6 obtains the pictorial information of 1 display of detection screen, and picture is sent to processor 2 and carries out image procossing, and
Calculate the concentration distribution of 5 section of ion beam；In this second embodiment, a kind of detection device 200 is provided, is filled with detection
The difference for setting 100 is that detection screen 1 also has signal transmission unit 11, can convert phosphorescence response message to electric signal simultaneously
It is transmitted to processor 2, to obtain the concentration distribution of 5 section of ion beam；In the third embodiment, a kind of detection device is provided
300, the difference with detection device 100 is, detection screen 1 can directly carry out optoelectronic induction, obtains the phosphorus of each pixel
Photoresponse information, and summarized by processor 2 and be distributed.
The present embodiment additionally provides a kind of ion implantation equipment (not shown), and there is ion implantation equipment detection above to fill
Set one of 100, detection device 200 and detection device 300.
In the more excellent technical solution of the present embodiment, it is illustrated so that ion implantation equipment has detection device 100 as an example,
Ion implantation equipment further includes Automatic Optimal unit (not shown), and Automatic Optimal unit can be according to the detection of detection device 100
As a result Automatic Optimal is carried out to ion beam 5.
In the present embodiment, ion implantation equipment can be according to the concentration for 5 section of ion beam that detection device 100 detects
Distributed data carries out Automatic Optimal to ion beam 5, the Efficiency and accuracy of the optimization of ion beam 5 is improved, specifically, each time
After the completion of optimization, ion implantation equipment can also be according to the concentration for 5 section of ion beam that detection device 100 after optimization detects point
Cloth carries out further optimization until obtaining qualified ion beam 5.
In the present embodiment, the visual of the concentration distribution of 5 section of ion beam can be responded and intuitively obtained according to phosphorescence
Change image, provides convenience for user to the optimization of ion beam 5.
The present embodiment additionally provides a kind of method for visualizing of the ion concentration distribution of 5 section of ion beam, including following step
It is rapid: the irradiation of ion beam 5 is received using the detection screen 1 for being coated with phosphor material 4；According to phosphor material 4 because receiving 5 spoke of ion beam
According to and generate phosphorescence response, obtain 5 section of ion beam ion concentration distribution.
It is further comprising the steps of in more excellent technical solution of the invention: by the energy adjusting of ion beam 5 to particular range
It is interior.
It is further comprising the steps of in more excellent technical solution of the invention: in same image, to show 5 complete section of ion beam
The ion concentration distribution in face.
So far, it has been combined attached drawing and describes technical solution of the present invention, still, skilled addressee readily understands that
It is that protection scope of the present invention is expressly not limited to these specific technical solutions.Under the premise of without departing from the principle of the present invention,
Those skilled in the art can make equivalent change or replacement to the relevant technologies feature, the technology after these changes or replacement
Scheme will fall within the scope of protection of the present invention.
Claims (10)
1. a kind of detection device, for detecting the ion concentration distribution in ion beam profile direction characterized by comprising
Detection screen, the side that the detection screen can receive the ion beam irradiation are coated with phosphor material；With
Processor shields with the detection and is electrically connected, and can be produced according to the phosphor material because receiving the ion beam irradiation
Raw phosphorescence response, obtains the ion concentration distribution of the ion beam profile.
2. detection device as described in claim 1, which is characterized in that further include energy adjusting pipe, be set to the detection screen
Along the upstream side of direction of beam transport, for will be in the energy adjusting to particular range of the ion beam.
3. detection device as described in claim 1, which is characterized in that the transmission direction of the detection screen and the ion beam is hung down
Straight setting, and the spreading area of the upper phosphor material of detection screen is more than the area of section of the ion beam.
4. detection device as described in claim 1, which is characterized in that the image information of the detection screen is divided into several
Pixel, the processor determine the ion beam in the ion concentration of corresponding region according to the brightness of each pixel.
5. the detection device as described in claim 1-4 any one, which is characterized in that the phosphor material is sulfide, oxygen
One of the compounds of group of compound, II-IV and IV-V, rare earth luminescent material are a variety of.
6. a kind of ion implantation equipment, which is characterized in that the ion implantation equipment has such as claim 1-5 any one institute
The detection device stated.
7. ion implantation equipment as claimed in claim 6, which is characterized in that it further include Automatic Optimal unit, it is described automatic excellent
Automatic Optimal can be carried out to the ion beam according to the testing result of the detection device by changing unit.
8. a kind of method for visualizing of the ion concentration distribution of ion beam profile, which comprises the following steps:
The irradiation of ion beam is received using the detection screen for being coated with phosphor material；
The phosphorescence response generated according to the phosphor material because receiving the ion beam irradiation, obtains the ion beam profile
Ion concentration distribution.
9. the method for visualizing of the ion concentration distribution of ion beam profile as claimed in claim 8, which is characterized in that further include
Following steps:
It will be in the energy adjusting to particular range of ion beam.
10. the method for visualizing of the ion concentration distribution of ion beam profile as claimed in claim 8, which is characterized in that also wrap
Include following steps:
In same image, the ion concentration distribution in ion beam complete section face is shown.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910735926.8A CN110444458A (en) | 2019-08-09 | 2019-08-09 | A kind of method for visualizing of the ion concentration distribution of detection device, ion implantation equipment and ion beam profile |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910735926.8A CN110444458A (en) | 2019-08-09 | 2019-08-09 | A kind of method for visualizing of the ion concentration distribution of detection device, ion implantation equipment and ion beam profile |
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| CN110444458A true CN110444458A (en) | 2019-11-12 |
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| CN201910735926.8A Pending CN110444458A (en) | 2019-08-09 | 2019-08-09 | A kind of method for visualizing of the ion concentration distribution of detection device, ion implantation equipment and ion beam profile |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005063874A (en) * | 2003-08-19 | 2005-03-10 | Nissin Electric Co Ltd | Ion implanter |
| KR20090064030A (en) * | 2007-12-14 | 2009-06-18 | 주식회사 동부하이텍 | Method of measuring recombinant ion in ion implanter with linear accelerator |
| CN101484967A (en) * | 2006-06-29 | 2009-07-15 | 瓦里安半导体设备公司 | Methods and apparatus for beam density measurement in two dimensions |
| CN102782800A (en) * | 2009-10-23 | 2012-11-14 | 塞莫费雪科学（不来梅）有限公司 | Detection apparatus for detecting charged particles, methods for detecting charged particles and mass spectrometer |
| CN102867722A (en) * | 2011-07-05 | 2013-01-09 | 北京中科信电子装备有限公司 | Device for detecting ion beam profile density distribution and ion beam uniformity distribution in real time |
| CN102956424A (en) * | 2011-08-22 | 2013-03-06 | 北京中科信电子装备有限公司 | Honeycomb beam homogeneity detecting device |
| JP2014067558A (en) * | 2012-09-25 | 2014-04-17 | Renesas Electronics Corp | Ion implantation apparatus |
-
2019
- 2019-08-09 CN CN201910735926.8A patent/CN110444458A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005063874A (en) * | 2003-08-19 | 2005-03-10 | Nissin Electric Co Ltd | Ion implanter |
| CN101484967A (en) * | 2006-06-29 | 2009-07-15 | 瓦里安半导体设备公司 | Methods and apparatus for beam density measurement in two dimensions |
| KR20090064030A (en) * | 2007-12-14 | 2009-06-18 | 주식회사 동부하이텍 | Method of measuring recombinant ion in ion implanter with linear accelerator |
| CN102782800A (en) * | 2009-10-23 | 2012-11-14 | 塞莫费雪科学（不来梅）有限公司 | Detection apparatus for detecting charged particles, methods for detecting charged particles and mass spectrometer |
| CN102867722A (en) * | 2011-07-05 | 2013-01-09 | 北京中科信电子装备有限公司 | Device for detecting ion beam profile density distribution and ion beam uniformity distribution in real time |
| CN102956424A (en) * | 2011-08-22 | 2013-03-06 | 北京中科信电子装备有限公司 | Honeycomb beam homogeneity detecting device |
| JP2014067558A (en) * | 2012-09-25 | 2014-04-17 | Renesas Electronics Corp | Ion implantation apparatus |
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Application publication date: 20191112 |