CN110441956A - Quantum stippling film and display device - Google Patents

Quantum stippling film and display device Download PDF

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Publication number
CN110441956A
CN110441956A CN201910768491.7A CN201910768491A CN110441956A CN 110441956 A CN110441956 A CN 110441956A CN 201910768491 A CN201910768491 A CN 201910768491A CN 110441956 A CN110441956 A CN 110441956A
Authority
CN
China
Prior art keywords
stippling film
quantum
layer
quantum stippling
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN201910768491.7A
Other languages
Chinese (zh)
Inventor
徐晓波
马卜
邢泽咏
王允军
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Xingshuo Nanotech Co Ltd
Original Assignee
Suzhou Xingshuo Nanotech Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Xingshuo Nanotech Co Ltd filed Critical Suzhou Xingshuo Nanotech Co Ltd
Priority to CN201910768491.7A priority Critical patent/CN110441956A/en
Publication of CN110441956A publication Critical patent/CN110441956A/en
Withdrawn legal-status Critical Current

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Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133512Light shielding layers, e.g. black matrix
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553Reflecting elements
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133617Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • H10K50/856Arrangements for extracting light from the devices comprising reflective means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/38Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

This application discloses a kind of quantum stippling film and display devices.Quantum stippling film includes: transparent substrate;Black matrix on the transparent substrate is set, and the black matrix has multiple pixel openings;Contain quantum dot polymeric layer in at least partly described pixel openings;The inner wall of the pixel openings containing quantum dot polymeric layer contains reflection layer.Light-emitting layer is set by the inner wall in pixel openings, can reduce absorption of the black matrix to the transmitting light of quanta polymer layer, to increase the light conversion efficiency of quantum stippling film.

Description

Quantum stippling film and display device
Technical field
This application involves display field more particularly to a kind of quantum stippling film and display devices.
Background technique
Since quantum dot has many advantages, such as that half-peak width, emission peak positions are adjustable, it is widely used as in display device.Than Such as, generally the light conversion material that quanta polymer material is filled in the opening of black matrix" as color film is used, with Past filter is compared, and the display device based on quantum stippling film has higher display colour gamut.
But it is larger with the contact surface of black matrix" open side due to quanta polymer layer, so that quantum dot is poly- The major part for closing the light that nitride layer issues is absorbed by black matrix", so that the light conversion efficiency of quantum stippling film is lower.
Summary of the invention
The application's is designed to provide a kind of quantum stippling film and display device, to solve the light conversion of quantum stippling film The lower problem of efficiency.
According to the one aspect of the application, a kind of quantum stippling film is provided, comprising: transparent substrate;It is arranged described transparent Black matrix on substrate, the black matrix have multiple pixel openings;It is poly- containing quantum dot in at least partly described pixel openings Close nitride layer;The inner wall of the pixel openings containing quantum dot polymeric layer contains reflection layer.
Preferably, the reflection layer is metal, alloy or metal oxide.
Preferably, the thickness of the reflection layer is between 5-100 nanometers.
Preferably, the thickness of the quanta polymer layer and the depth of the pixel openings are of substantially equal.
Preferably, the quanta polymer layer includes polymer substrate and quantum dot dispersed therein.
Preferably, the side far from the transparent substrate of the quanta polymer layer is provided with encapsulated layer.
Preferably, the quanta polymer layer in the pixel openings includes emitting first of the first light, and transmitting Second of second of light.
Preferably, colour filter is additionally provided between the quanta polymer layer and the transparent substrate.
According to further aspect of the application, a kind of display device is provided, comprising: back light unit, and as above any institute The quantum stippling film stated, and the liquid crystal layer between the back light unit and the quantum stippling film.
According to further aspect of the application, a kind of display device is provided, comprising: the substrate with multiple pixel regions; Electroluminescent device is located in the pixel region;And the quantum stippling film as described above in face of the substrate, it is described The pixel openings of quantum stippling film and the pixel region of substrate are correspondingly arranged.
The application, which has the following beneficial effects:, is arranged light-emitting layer by the inner wall in pixel openings, can reduce black square Absorption of the battle array to the transmitting light of quanta polymer layer, to increase the light conversion efficiency of quantum stippling film.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of quantum stippling film in the application one schematical embodiment;
Fig. 2 is the structural schematic diagram of quantum stippling film in the application one schematical embodiment;
Fig. 3 is the structural schematic diagram of quantum stippling film in the application one schematical embodiment;
Fig. 4 is the structural schematic diagram of display device in the application one schematical embodiment;
Fig. 5 is the structural schematic diagram of display device in the application one schematical embodiment.
Specific embodiment
Below in conjunction with the application embodiment, technical solutions in the embodiments of the present application is described in detail.It answers It is noted that described embodiment is only a part of embodiment of the application, rather than whole embodiments.
According to some illustrative embodiments of the application, as described in Figure 1, quantum stippling film 10, including transparent substrate 11, Black matrix 12 on the surface of transparent substrate 11 is set, and black matrix 12 includes multiple pixel openings 121, at least part of pixel Contain quantum dot polymeric layer 13 in opening 121, it is anti-that the inner wall of the pixel openings 121 containing quantum dot polymeric layer 13 contains light Penetrate layer 14.
Black matrix 12 separates multiple pixel openings 121 so that different pixels opening 121 between it is luminous not by mutually it Between influence.Quanta polymer layer 13 can emit the light of another color under the excitation by external light source.Reflection layer 14 for reflecting the light of the transmitting of quantum dot polymeric layer 13, to reduce the inner wall of pixel openings 121 to quanta polymer layer The absorption of the light of 13 transmittings, the further light conversion efficiency for improving quanta polymer layer 13.
The constituent material of reflection layer 14 can be metal, alloy or metal oxide.For example, metal can for aluminium, Silver, gold, copper, tin or nickel.Alloy can be steel, stainless steel or duralumin.Metal oxide can be zinc oxide or oxidation Aluminium.
The preparation of reflection layer 14 can such as be deposited by vapor phase growth, sputter mode forms, and can also pass through painting Cover, spray or the modes such as ink-jet and formed.
The thickness of reflection layer 14 is preferably between 5-100 nanometers, for example, can receive for 5,10,20,50,80 or 100 Rice.
In the embodiment of the application, the thickness and the basic phase of depth of pixel openings 121 of quanta polymer layer 13 Deng.That is, pixel openings 121 are essentially filled with by quanta polymer layer 13.
Quanta polymer layer includes polymer substrate and quantum dot dispersed therein, and polymer substrate can be poly- Acrylic resin, poly epoxy resin, polyamino resin or poly- silicone resin etc..Quantum dot can be II-VI group compound, III-V Compounds of group, group IV-VI compound, IV race element or compound, I-III-VI group compound, I-II-IV-VI compounds of group, Perovskite compound or combinations thereof.
In one embodiment, as shown in Fig. 2, quantum stippling film 20, including transparent substrate 21, it is arranged in transparent substrate 21 Surface on black matrix 22, black matrix 22 includes multiple pixel openings 221, amount at least part of pixel openings 221 Son point polymeric layer 23, the inner wall of the pixel openings 221 containing quantum dot polymeric layer 23 contain reflection layer 24, and quantum dot is poly- It closes and is additionally provided with colour filter 25 between nitride layer 23 and transparent substrate 21.
Inventor has found that under normal circumstances, quantum dot emits backlight in quanta polymer layer 23 in an experiment The light conversion efficiency of exciting light is unable to reach absolutely, i.e., part light in exciting light is according to then passing through quanta polymer Layer, to contain from the light issued in pixel openings there are two types of light: non-switched exciting light and quantum dot emit after being excited Light.In this way, leading to not reach display effect.And by being arranged between quanta polymer layer 23 and transparent substrate 21 After colour filter 25, the reduction for the property of can choose or the non-switched exciting light in this part is eliminated, to reach preset display effect Fruit.
Continue to see Fig. 2, the side of the separate transparent substrate 20 of quanta polymer layer 23 is additionally provided with encapsulated layer 26, encapsulation Layer 26 is for quanta polymer layer 23 to be sealed in pixel openings 221, thus reduce destruction of the external environment to quantum dot, Increase the service life of quantum stippling film.
In one embodiment, as shown in figure 3, quantum stippling film 30, including transparent substrate 31, it is arranged in transparent substrate 31 Surface on black matrix 32, black matrix 32 includes multiple pixel openings 321, amount at least part of pixel openings 321 Son point polymeric layer 33, the inner wall of the pixel openings 321 containing quantum dot polymeric layer 33 contain reflection layer 34, and quantum dot is poly- It closes and is additionally provided with colour filter 35 between nitride layer 33 and transparent substrate 31.Quanta polymer layer 33 includes emit the first light the One 331, and transmitting second 332 of second of light.Also outs open does not fill quantum dot in pixel openings 321 poly- Nitride layer 33 is closed, to when in use, can directly allow the light in backlight to pass through, constitutes another pixel face in display device Color.For example, the light of backlight transmitting can be blue light, and the first light and second of light are respectively red and green.
According to another embodiment of the application, as shown in figure 4, providing a kind of display device 4, display device 4 includes amount Sub- stippling film 40, for providing the backlight 42 of light, and the liquid crystal layer 41 between backlight 42 and quantum stippling film 40.
According to another embodiment of the application, as shown in figure 5, providing a kind of display device 5, display device 5 includes tool There are the substrate 51 of multiple pixel regions 511, the electroluminescent device 512 in pixel region 511;And face the substrate The quantum stippling film 50 of 51 settings, pixel openings 521 and the pixel region 511 of quantum stippling film 50 are correspondingly arranged.
Although inventor has done more detailed elaboration to the technical solution of the application and has enumerated, it should be understood that for For those skilled in the art, above-described embodiment is modified and/or the flexible or equivalent alternative solution of use is obvious , cannot all be detached from the essence of the application spirit, the term occurred in the application be used for elaboration to technical scheme and Understand, the limitation to the application can not be constituted.

Claims (10)

1. a kind of quantum stippling film characterized by comprising
Transparent substrate;And
Black matrix on the transparent substrate is set, and the black matrix has multiple pixel openings;
Wherein, quantum dot polymeric layer, the picture containing quantum dot polymeric layer are contained in at least partly described pixel openings The inner wall of element opening contains reflection layer.
2. quantum stippling film according to claim 1, which is characterized in that the reflection layer is metal, alloy or metal Oxide.
3. quantum stippling film according to claim 1, which is characterized in that the thickness of the reflection layer is in 5-100 nanometer Between.
4. quantum stippling film according to claim 1, which is characterized in that the thickness and the picture of the quanta polymer layer The depth of element opening is of substantially equal.
5. quantum stippling film according to claim 1, which is characterized in that the quanta polymer layer includes polymer substrate With the quantum dot being dispersed in the polymer substrate.
6. quantum stippling film according to claim 1, which is characterized in that the quanta polymer layer and the transparent substrate Between be additionally provided with colour filter.
7. quantum stippling film according to claim 1, which is characterized in that the quanta polymer layer far from described transparent The side of substrate is provided with encapsulated layer.
8. quantum stippling film according to claim 1, which is characterized in that the quanta polymer layer packet in the pixel openings Include first for emitting the first light, and second of second of light of transmitting.
9. display device characterized by comprising
Back light unit, and the quantum stippling film as described in any in claim 1 to 8, and between the back light unit and institute State the liquid crystal layer between quantum stippling film.
10. display device characterized by comprising
Substrate with multiple pixel regions;
Electroluminescent device is located in the pixel region;
And the quantum stippling film as described in any in claim 1 to 8 in face of the substrate, the quantum stippling film The pixel region of pixel openings and substrate is correspondingly arranged.
CN201910768491.7A 2019-08-20 2019-08-20 Quantum stippling film and display device Withdrawn CN110441956A (en)

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Application Number Priority Date Filing Date Title
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111063269A (en) * 2019-12-17 2020-04-24 深圳市华星光电半导体显示技术有限公司 Display panel
CN111580301A (en) * 2020-06-10 2020-08-25 京东方科技集团股份有限公司 Color film substrate, manufacturing method thereof and display device
CN112037674A (en) * 2020-09-22 2020-12-04 京东方科技集团股份有限公司 Area light source, manufacturing method thereof and display device
CN112631021A (en) * 2020-12-25 2021-04-09 舟山扑浪实业有限公司 Quantum dot display panel and self-assembly preparation method thereof
WO2021082042A1 (en) * 2019-10-28 2021-05-06 深圳市华星光电半导体显示技术有限公司 Display panel and fabrication method therefor
CN113614933A (en) * 2020-03-03 2021-11-05 东莞市中麒光电技术有限公司 Light emitting diode and preparation method thereof
CN113745292A (en) * 2021-08-27 2021-12-03 深圳市华星光电半导体显示技术有限公司 Quantum dot color film substrate, manufacturing method thereof and quantum dot display device
TWI797846B (en) * 2021-11-24 2023-04-01 財團法人工業技術研究院 Color conversion unit, color conversion structure using the same, and light-emitting diode display using the same

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021082042A1 (en) * 2019-10-28 2021-05-06 深圳市华星光电半导体显示技术有限公司 Display panel and fabrication method therefor
CN111063269A (en) * 2019-12-17 2020-04-24 深圳市华星光电半导体显示技术有限公司 Display panel
CN113614933A (en) * 2020-03-03 2021-11-05 东莞市中麒光电技术有限公司 Light emitting diode and preparation method thereof
US12068357B2 (en) 2020-03-03 2024-08-20 Hcp Technology Co., Ltd. Light emitting diode and preparation method therefor
CN111580301A (en) * 2020-06-10 2020-08-25 京东方科技集团股份有限公司 Color film substrate, manufacturing method thereof and display device
WO2021249075A1 (en) * 2020-06-10 2021-12-16 京东方科技集团股份有限公司 Color film substrate, fabrication method therefor and display device
CN111580301B (en) * 2020-06-10 2022-07-12 京东方科技集团股份有限公司 Color film substrate, manufacturing method thereof and display device
CN112037674A (en) * 2020-09-22 2020-12-04 京东方科技集团股份有限公司 Area light source, manufacturing method thereof and display device
CN112631021A (en) * 2020-12-25 2021-04-09 舟山扑浪实业有限公司 Quantum dot display panel and self-assembly preparation method thereof
CN113745292A (en) * 2021-08-27 2021-12-03 深圳市华星光电半导体显示技术有限公司 Quantum dot color film substrate, manufacturing method thereof and quantum dot display device
TWI797846B (en) * 2021-11-24 2023-04-01 財團法人工業技術研究院 Color conversion unit, color conversion structure using the same, and light-emitting diode display using the same

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Application publication date: 20191112

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