CN110434834A - A kind of man-machine collaboration mechanical arm - Google Patents
A kind of man-machine collaboration mechanical arm Download PDFInfo
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- CN110434834A CN110434834A CN201910764992.8A CN201910764992A CN110434834A CN 110434834 A CN110434834 A CN 110434834A CN 201910764992 A CN201910764992 A CN 201910764992A CN 110434834 A CN110434834 A CN 110434834A
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- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 23
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims description 23
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims description 23
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 23
- 238000002493 microarray Methods 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910021389 graphene Inorganic materials 0.000 claims description 10
- 239000012528 membrane Substances 0.000 claims description 10
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- 239000002105 nanoparticle Substances 0.000 claims description 5
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- 238000005452 bending Methods 0.000 description 20
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- 238000001723 curing Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 3
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- 239000004020 conductor Substances 0.000 description 2
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- 239000007787 solid Substances 0.000 description 2
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- 208000008037 Arthrogryposis Diseases 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
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- 229910021641 deionized water Inorganic materials 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
- B25J9/00—Programme-controlled manipulators
- B25J9/0081—Programme-controlled manipulators with master teach-in means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/09—Forming piezoelectric or electrostrictive materials
- H10N30/092—Forming composite materials
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Abstract
The present invention provides a kind of man-machine collaboration mechanical arm, including signal acquisition unit, signal conversion unit, data processing unit, Bluetooth transmission module, bluetooth receiving module, driving device.The signal acquisition unit is pasted at human synovial, is sequentially connected with signal conversion unit and Bluetooth transmission module；The driving device is set on mechanical arm, is sequentially connected with data processing unit and bluetooth receiving module；Pressure drag signal and piezoelectric signal at the signal acquisition unit acquisition human synovial, pressure drag signal and piezoelectric signal are converted into digital signal by signal conversion, the digital signal emits through Bluetooth transmission module, it is received by bluetooth receiving module, it is transmitted to data processing unit, it is transmitted to driving device, driving device drives manipulator motion.The present invention can provide a kind of pair of mechanical arm similar to the control mode of human arm, and adaptability is stronger, can reduce user's learning cost.
Description
Technical field
The present invention relates to sensor, signal processing technology, intelligent controls etc., belong to human-computer interaction, smart machine field, tool
Body, it is related to a kind of man-machine collaboration mechanical arm.
Background technique
Nowadays many badly to still need to people with the operation under high-risk environment to complete, mechanical arm can be to avoid people directly facing evil
Bad and high-risk environment.And many robot arm devices need professional to be programmed teaching at present, and indirect synchronous human body is dynamic
Make.It is feasible to mechanical arm programming teaching for single duplicate operation, but encounters more, the unduplicated operation of variation, compiles
Journey teaching is difficult to meet.The mechanical arm of man-machine synchronization possesses the movement and control mode of more human like body arm, adaptability
It is stronger, user's learning cost can be reduced.
Summary of the invention
In view of the deficiencies of the prior art, the object of the present invention is to provide a kind of mechanical arms of man-machine synchronization.Skill of the invention
Art scheme is achieved through the following technical solutions: a kind of man-machine collaboration mechanical arm of, including the conversion of signal acquisition unit, signal
Unit, data processing unit, Bluetooth transmission module, bluetooth receiving module, driving device.The signal acquisition unit is pasted on people
Body joint is sequentially connected with signal conversion unit and Bluetooth transmission module；The driving device is set on mechanical arm, with number
It is sequentially connected according to processing unit and bluetooth receiving module；Pressure drag signal and pressure at the signal acquisition unit acquisition human synovial
Pressure drag signal and piezoelectric signal are converted into digital signal by electric signal, signal conversion, and the digital signal is through Bluetooth transmission module
Transmitting, is received by bluetooth receiving module, is transmitted to data processing unit, then be transmitted to driving device, and driving device driving is mechanical
Arm movement.
The signal acquisition unit is piezoelectricity/pressure drag double mode flexible sensor, including piezoelectric layer and piezoresistance layer；The pressure
Electric layer is by the Piezoelectric anisotropy film with micro-structure, and is sprayed on gold electrode on laminated film and constitutes；The piezoresistance layer is by spraying
The graphene film for being coated in the gold electrode surfaces with micro-structure and the PDMS with micro-structure is constituted；The micro-structure is positive four
Terrace with edge microarray, the upper bottom surface side length of the positive truncated rectangular pyramids and the ratio k of bottom surface side length and array heights h meet:
Wherein,For the first variable, specially
For the second variable, tool
Body is For third variable, speciallycij、eijWith
kijIt is elastic stiffness constant, piezoelectric stress constant and dielectric constant respectively；a2Be positive truncated rectangular pyramids bottom surface side length；F is expressed as pressure,
T is the time, and R is voltmeter internal resistance, and V is the output voltage of piezoelectric layer.
Further, the positive truncated rectangular pyramids microarray is preferably pyramid microarray.
Further, it is h=40 μm that the positive truncated rectangular pyramids microarray is highly preferred.
Further, the piezoelectric layer is prepared by the following method:
(1) 1g BTO nano particle is soaked in 10mL H2O2, impregnating 6h under the conditions of 90 DEG C makes BTO nano grain surface
It is modified, h-BTO powder is obtained, drying is taken out.
(2) the h-BTO powder 0.025g for taking step (1) to be prepared, is dissolved in the DMF of 10mL, while taking 0.225g
P (VDF-TrFE) powder is dissolved in the DMF of another 10mL, is then uniformly mixed two parts of DMF solutions；
(3) mixed solution in step (2) is spin-coated in the silicon template with positive truncated rectangular pyramids microarray, silicon template size
For 1cm × 1cm, freeze-day with constant temperature to film-forming, then make annealing treatment 2h at 120 DEG C and then cool down, after being cooled to room temperature, it will answer
Film is closed to remove from silicon template.
(4) two surfaces of the laminated film obtained in step (3) plate the gold electrode of 100nm thickness respectively, connect respectively
A lead, and the drop coating 10mL 0.75mg/mL graphene solution on the gold electrode with microarray surface are connect, and dry, In
Graphene surface connects a lead, and the piezoelectric membrane with positive truncated rectangular pyramids microarray is prepared.
Further, the piezoresistance layer is prepared by the following method:
(1) PDMS is uniformly mixed with curing agent according to mass ratio 10:1, vacuum degassing bubble；
(2) PDMS for removing bubble is spin-coated in the silicon template with positive truncated rectangular pyramids microarray, silicon template size is 1cm
× 1cm, freeze-day with constant temperature to film-forming, and removed from silicon template；
(3) it by 10mL 0.75mg/mL graphene solution drop coating to the surface PDMS with microarray, and dries, and in stone
A lead is drawn on black alkene surface, obtains the piezoresistance layer with positive truncated rectangular pyramids microarray.
Further, the signal acquisition unit is affixed on elbow, wrist, at finger-joint.
Further, the data processing unit is to process digital signals into speed, angle, direction signal.
Further, the driving device is driver dm542.
Compared with prior art, the device have the advantages that being: used signal acquisition unit is due to it
The particularity (stratified energy mechanism) of structure, is cooperated by piezoelectric signal and pressure drag signal, in a certain range, double mode
Sensor is realized from static state to dynamic, the from low to high detection of pressure information.For the power or change of complex loading course
The size deformed in loading sequence, rate and angle detecting may be implemented in shape load, double mode sensor.By double mode sensor
Applied in the bending deformation of human synovial, solve singly deposit piezoresistance sensor cannot differentiate bending direction and be bent rate lack
Point realizes bending angle, bending direction and the accurate measurement for being bent rate.Therefore, which can not only be same
Rate, the angle, direction of human arm movement are walked, and more accurate compared to traditional sensors, be delayed low, reaction is timely.
Detailed description of the invention
Fig. 1 is the flow diagram of man-machine collaboration mechanical arm signal processing of the present invention；
Fig. 2 is signal acquisition unit production flow diagram of the present invention；
Fig. 3 is that signal acquisition unit is attached to the schematic diagram on arm；
Fig. 4 is the sensing capabilities figure of piezoelectric layer and piezoresistance layer during manipulator motion: 4a is the voltage of piezoelectric layer output
Signal with bending rate variation image, 4b be piezoelectric layer minimum detection threshold value, 4c be piezoresistance layer output current signal with
The image of bending angle variation, 4d are the minimum detection threshold value of piezoresistance layer；
Fig. 5 is the voltage signal and current signal of signal acquisition unit output；
Fig. 6 is that signal acquisition unit detects the electric signal generated when human body joint motion；
Fig. 7 is one joint schematic diagram of mechanical arm.
Specific embodiment
Fig. 1 is the flow diagram of man-machine collaboration mechanical arm signal processing of the present invention, the man-machine collaboration mechanical arm, including signal
Acquisition unit, signal conversion unit, data processing unit, Bluetooth transmission module, bluetooth receiving module, driving device.The letter
Number acquisition unit is pasted at human synovial, is sequentially connected with signal conversion unit and Bluetooth transmission module；The driving device
It is set on mechanical arm, is sequentially connected with data processing unit and bluetooth receiving module；The signal acquisition unit acquires human body
Pressure drag signal and piezoelectric signal are converted into digital signal, the number by the pressure drag signal and piezoelectric signal of joint, signal conversion
Word signal emits through Bluetooth transmission module, is received by bluetooth receiving module, is transmitted to data processing unit, is transmitted to driving dress
It sets, driving device drives manipulator motion.The driving device is driver dm542.
The signal acquisition unit is piezoelectricity/pressure drag double mode flexible sensor, including piezoelectric layer and piezoresistance layer；The pressure
Electric layer is by the Piezoelectric anisotropy film with micro-structure, and is sprayed on gold electrode on laminated film and constitutes；The piezoresistance layer is by spraying
The graphene film for being coated in the gold electrode surfaces with micro-structure and the PDMS with micro-structure is constituted；The micro-structure is positive four
Terrace with edge microarray, according to the constitutive equation of piezoelectric effect:
Wherein cij、eijAnd kijIt is elastic stiffness constant, piezoelectric stress constant and dielectric constant, σ respectivelyijFor stress, εij
For strain, D is dielectric displacement, and E is electric field strength.
When piezoelectric membrane is acted on by normal force, σ 11 and σ 22 are equal to 0, above formula (2) and (3) simultaneous, expression are as follows:
ε 11, ε 22 and ε 33 is eliminated to obtain:
Wherein: D3For method phase dielectric displacement,
Again according to the relationship between electric field and potential:
Further obtain the method phase dielectric displacement of piezoelectric membrane are as follows:
V is the output voltage of piezoelectric membrane, and l is the thickness of P (VDF-TrFE) film.
According to Maxwell equation and Ohm's law, the size and dielectric displacement D of electric current I3, voltage V it is related with resistance R, root
According to the relationship between them:
Wherein, t is the time, and A is piezoelectric membrane forced area.By electric current I and dielectric displacement D3Elimination after obtain:
Again
According to primary condition V(t=0)=0, output voltage V are as follows:
In formula:
In order to further increase the piezoelectric effect of piezoelectric membrane, positive truncated rectangular pyramids microarray knot is introduced on flat film surface
Structure, relative to flat film structure, the sectional area of truncated rectangular pyramids structure in vertical direction is different, the method that piezoelectric membrane is subject to
To stress σ33It is equal, and stress σ of the truncated rectangular pyramids on vertical cross-section in vertical direction33It is different.
If the side length of truncated rectangular pyramids upper surface is a1, a length of height of bottom sides is h.Then the mean stress of truncated rectangular pyramids can indicate
Are as follows:
In formula, geometric parameter k=a is defined2/a1.As k=1, the area of the upper top surface of positive truncated rectangular pyramids is equal to bottom surface
Area is considered as a micro unit for flat film.It can be seen that working as the height h and bottom sides of truncated rectangular pyramids from formula (17)
Long a2When constant, upper top surface side length a1It is smaller, mean stress σ '33It is bigger.It is defeated between positive truncated rectangular pyramids upper and lower end face in order to obtain
Voltage value out brings mean stress σ ' 33 into
To obtain:
From formula (1) it can be seen that the output voltage and positive truncated rectangular pyramids micro-structure and geometric parameter k of piezoelectric transducer and
Height h is directly proportional.So in order to improve the sensing capabilities of piezoelectric sensing layer, it should the area of top surface as far as possible in reduction micro-structure
With the height for increasing micro-structure.Therefore, when positive truncated rectangular pyramids are pyramid structure, piezoelectric layer sensing capabilities are optimal.Work as gold
The bottom edge of word tower micro-structure is elongated when being 60 μm, and the maximum height that current micro-structure processing technology can be prepared is 40 μm.
As shown in Fig. 2, the signal acquisition unit is obtained by the following method:
Prepare piezoelectric layer:
(1) 1gBTO nano particle is added to H2O2In (35%, 10mL) solution, ultrasonic 1h keeps BTO nano particle abundant
It is dispersed in H2O2 solution, 8h is then kept at 100 DEG C, finally centrifugation is placed in 70 DEG C of baking oven dry.
(2) take the h-BTO nano particle 25mg ultrasonic disperse prepared in (1) in 10mlN, dinethylformamide (DMF)
Middle 1h.
(3) 225mgPVDF-TrFE powder is dissolved in 10mlDMF, is then mixed two parts of solution, mechanical stirring 4h.
(4) h-BTO/P (VDF-TrFE) solution is spin-coated in silicon template, silicon template size is 1cm × 1cm, sets work
Making revolving speed is 1000r/min.Whole process is divided into three phases, and wherein the first stage is startup stage, stablizes sucker and accelerates
To working speed.When revolving speed reaches, solution is slowly added dropwise on silicon template, keeps revolving speed 30s, keeps solution equal in silicon template
Even covering.Phase III reduction of speed zero, coating procedure terminate.
(5) the silicon template for being covered with solution is taken out, is put into vacuum oven in 80 DEG C of constant temperature dry 1h or so, film-forming
Afterwards, then at 120 DEG C 2h is made annealing treatment, to improve the crystallinity of piezoelectric membrane.After being cooled to room temperature, by film from silicon template
Removing, is prepared for pyramid micro structure array in the one side of piezoelectric membrane in this way.
(6) gold electrode is prepared in film upper and lower surfaces using electron beam evaporation technique, with elargol at upper and lower electrode both ends
Respectively two copper conductors of connection.RGO is spun to the top electrode in the pyramid micro-structure of piezoelectric layer as piezoresistance layer.
Prepare piezoresistance layer:
(1) the silicon template surface with micro-structure is carried out hydrophobic treatment first, silicon template size is 1cm × 1cm, will
PDMS is uniformly mixed with curing agent according to the mass fraction ratio of 10:1, and vacuumizes removing bubble.
(2) it then by PDMS spin coating (1000rpm/min) to the surface after hydrophobic treatment, is heating and curing, solidifies to PDMS
After film forming, PDMS is removed from silicon template surface in deionized water, obtains the surface PDMS with pyramid micro-structure.
(3) plasma treatment is carried out to the surface PDMS with pyramid micro-structure after air drying, enhances the parent of PDMS
It is aqueous, so that the graphene film in solution is uniformly distributed in micro-structure surface.
(4) anti-again after the surface the PDMS spin coating rGO solution (0.75mg/mL) for having pyramid micro-structure, heat drying
Multiple 10 spin coating rGO solution (500rpm/min).Finally copper conductor is connected on rGO layers with elargol.
(5) it is finally packaged.Encapsulating material, which uses, is purchased from u s company up to healthy and free from worry PDMS, PDMS and curing agent
Ratio be 10:1 first PDMS is spin-coated in glass culture dish in the encapsulation process of device, place baking oven in, baking oven temperature
Degree is 80 DEG C, places 5min, until PDMS is in semi-cured state, removes from baking oven, piezoelectric layer is then attached to semi-solid preparation
PDMS film on；Piezoresistance layer is attached on the PDMS film of another semi-solid preparation with same method.
Piezoresistance layer with micro-structure is interlocked with piezoelectric layer, obtains signal acquisition unit of the invention, the signal is adopted
Collection unit can be attached to the joint of the elbow of arm, wrist and each finger, and when arm motion, signal acquisition unit follows fortune
It is dynamic, generate electric signal.As shown in figure 3, being that signal acquisition unit is affixed on arm.
Firstly, the sensing capabilities to sensor are demarcated.On the robotic arm by signal acquisition unit patch, when mechanical arm is transported
When dynamic, the piezoelectric signal of signal acquisition unit output can detecte the bending rate at joint of mechanical arm, and pressure drag signal can be examined
Survey the bending angle size in joint.The sensing capabilities of piezoelectric layer and piezoresistance layer are as shown in figure 4, therefore deduce that: piezoelectric layer
Sensing sensitivity is 0.04V/ (°/s), and minimum detection threshold value is 2 °/s.Piezoelectric voltage and the relationship of joint bending rate are
Vout=(r-2) × 0.04.The sensing sensitivity of piezoresistance layer be 0.125/ (°), minimum detection threshold value be 3 °, current change quantity with
The relationship of bending angle is Δ I/I0=(θ -3) × 0.125.
The motion process of mechanical arm is controlled by setting program, it is bending to the right if it is negative direction that mechanical arm is bending to the left
For positive direction.The movement of mechanical arm is detected with signal acquisition unit, Fig. 5 is the voltage signal of signal acquisition unit output
And current signal.According to the size of resistance signal and voltage signal, signal conversion unit calculate mechanical arm bending angle and
Rate of bending can reappear its motion process.For example, at t=15s, calculating speed by piezoelectric signal is+20.8 °/s, by
It is 31.6 ° that pressure drag signal, which calculates angle, it is known that mechanical arm has moved right 31.6 ° with the speed of 20.8 °/s this moment.
Calibration finishes, and signal acquisition unit is applied in the detection of human body joint motion.As shown in fig. 6, signal is adopted
Collection unit is closely attached at the wrist of human body, and when wrist is to front curve, stimulation of the piezoelectric layer by moment exports a positive electricity
Pulse is pressed, while resistive layer resistance value becomes smaller, electric current increases.Electric signal passes in signal conversion unit through conducting wire, signal conversion
Unit is calculated the average bending during wrist flex by the peak value size and formula Vout=(r-2) × 0.04 of voltage pulse
Rate；By the size and formula Δ I/I of pressure drag signal0=(θ -3) × 0.125 calculates the bending angle size at wrist.When
When wrist is gradually restored to original state, voltage layer exports negative voltage pulse, and current value is also gradually reduced.In addition when wrist backward
When bending, piezoelectric layer exports negative voltage pulse, and pressure drag electric current increases.It can be examined by signal acquisition unit and signal conversion unit
Measure the much information of human body wrist joint motions, including wrist flex direction, bending angle and bending rate.
Digital signal after signal conversion unit converts is by Bluetooth transmission into data processing unit.
Fig. 7 be mechanical arm in schematic diagram, mechanical arm be built-in with data processing unit, bluetooth receiving module,.Data processing list
Member will transmit digital signal and be converted into electric signal, control driver dm542, drive the working gear on mechanical arm, thus
Keep mechanical arm synchronous with the movement of people.Control for mechanical arm including the following steps:
(1) signal acquisition unit generates deformation with joint etc., generates a series of electric signal.Wherein, piezoelectric layer generates electricity
Signal is pressed, piezoresistance layer generates current signal.
(2) the joint variation electric signal that signal acquisition unit acquires is converted digital signal by signal conversion unit, specifically
Working principle is as follows: being calculated arthrogryposis rate by collected voltage signal and formula Vout=(r-2) × 0.04 and is obtained
To the direction of motion, by collected current signal and formula Δ I/I0The bending angle that=(θ -3) × 0.125 calculates joint is big
It is small.After conversion through Bluetooth transmission into data processing unit.
(3) digital signal transmitted is converted into electric signal by data processing unit, gives driving device input signal, is driven
Dynamic device drives manipulator motion, so that the rate for moving mechanical arm with person joint, direction, angle are consistent always.
Claims (8)
1. a kind of man-machine collaboration mechanical arm, which is characterized in that including signal acquisition unit, signal conversion unit, data processing list
Member, Bluetooth transmission module, bluetooth receiving module, driving device.The signal acquisition unit is pasted at human synovial, with signal
Converting unit and Bluetooth transmission module are sequentially connected；The driving device is set on mechanical arm, with data processing unit and indigo plant
Tooth receiving module is sequentially connected；Pressure drag signal and piezoelectric signal at the signal acquisition unit acquisition human synovial, signal turn
It changes commanders pressure drag signal and piezoelectric signal is converted into digital signal, the digital signal emits through Bluetooth transmission module, connect by bluetooth
It receives module to receive, is transmitted to data processing unit, then be transmitted to driving device, driving device drives manipulator motion.
The signal acquisition unit is piezoelectricity/pressure drag double mode flexible sensor, including piezoelectric layer and piezoresistance layer；The piezoelectric layer
By the Piezoelectric anisotropy film with micro-structure, and it is sprayed on gold electrode on laminated film and constitutes；The piezoresistance layer is by being sprayed on
The graphene film of gold electrode surfaces with micro-structure and the PDMS with micro-structure are constituted；The micro-structure is positive truncated rectangular pyramids
Microarray, the upper bottom surface side length of the positive truncated rectangular pyramids and the ratio k of bottom surface side length and array heights h meet:
Wherein,For the first variable, specially For the second variable, specially For third variable, speciallycij、eijAnd kijPoint
It is not elastic stiffness constant, piezoelectric stress constant and dielectric constant；a2Be positive truncated rectangular pyramids bottom surface side length；F is expressed as pressure, and t is
Time, R are voltmeter internal resistance, and V is the output voltage of piezoelectric layer.
2. man-machine collaboration mechanical arm according to claim 1, which is characterized in that the positive truncated rectangular pyramids microarray is preferably golden word
Tower-shaped microarray.
3. man-machine collaboration mechanical arm according to claim 1, which is characterized in that the positive truncated rectangular pyramids microarray is highly preferred to be
H=40 μm.
4. man-machine collaboration mechanical arm according to claim 1, which is characterized in that the piezoelectric layer is prepared by the following method:
(1) 1g BTO nano particle is soaked in 10mL H2O2, impregnating 6h under the conditions of 90 DEG C changes BTO nano grain surface
Property, h-BTO powder is obtained, drying is taken out.
(2) the h-BTO powder 0.025g for taking step (1) to be prepared, is dissolved in the DMF of 10mL, while taking 0.225g P
(VDF-TrFE) powder is dissolved in the DMF of another 10mL, is then uniformly mixed two parts of DMF solutions；
(3) mixed solution in step (2) is spin-coated in the silicon template with positive truncated rectangular pyramids microarray, silicon template size is
1cm × 1cm, freeze-day with constant temperature to film-forming, then make annealing treatment 2h at 120 DEG C and then cool down, it, will be compound after being cooled to room temperature
Film is removed from silicon template.
(4) two surfaces of the laminated film obtained in step (3) plate the gold electrode of 100nm thickness respectively, are separately connected one
Root lead, and the drop coating 10mL 0.75mg/mL graphene solution on the gold electrode with microarray surface, and it is dry, in graphite
Alkene surface connects a lead, and the piezoelectric membrane with positive truncated rectangular pyramids microarray is prepared.
5. man-machine collaboration mechanical arm according to claim 1, which is characterized in that the piezoresistance layer is made by the following method
It is standby:
(1) PDMS is uniformly mixed with curing agent according to mass ratio 10:1, vacuum degassing bubble；
(2) PDMS for removing bubble is spin-coated in the silicon template with positive truncated rectangular pyramids microarray, silicon template size be 1cm ×
1cm, freeze-day with constant temperature to film-forming, and removed from silicon template；
(3) it by 10mL 0.75mg/mL graphene solution drop coating to the surface PDMS with microarray, and dries, and in graphene
A lead is drawn on surface, obtains the piezoresistance layer with positive truncated rectangular pyramids microarray.
6. man-machine collaboration mechanical arm according to claim 1, which is characterized in that the signal acquisition unit is affixed on elbow, hand
At wrist, finger-joint.
7. man-machine collaboration mechanical arm according to claim 1, which is characterized in that the data processing unit is to believe number
Number it is processed into speed, angle, direction signal.
8. man-machine collaboration mechanical arm according to claim 1, which is characterized in that the driving device is driver dm542.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910764992.8A CN110434834B (en) | 2019-08-19 | 2019-08-19 | Man-machine cooperation mechanical arm |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910764992.8A CN110434834B (en) | 2019-08-19 | 2019-08-19 | Man-machine cooperation mechanical arm |
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