CN1104335A - Temperature compensation method for environment gamma radiation monitoring probe - Google Patents
Temperature compensation method for environment gamma radiation monitoring probe Download PDFInfo
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- CN1104335A CN1104335A CN 93112844 CN93112844A CN1104335A CN 1104335 A CN1104335 A CN 1104335A CN 93112844 CN93112844 CN 93112844 CN 93112844 A CN93112844 A CN 93112844A CN 1104335 A CN1104335 A CN 1104335A
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- 230000005855 radiation Effects 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000000523 sample Substances 0.000 title claims abstract description 13
- 238000012544 monitoring process Methods 0.000 title claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 238000012545 processing Methods 0.000 claims abstract description 8
- 238000005259 measurement Methods 0.000 claims abstract description 7
- 230000005669 field effect Effects 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- 230000002277 temperature effect Effects 0.000 abstract description 8
- 230000000694 effects Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004164 analytical calibration Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
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Abstract
The environment gamma radiation monitoring probe temperature compensating method has hardware comprising temperature measuring silicon diode sensor, radiation intensity measuring high pressure ionization chamber, electrometer and MOS FET combined probe. The software is programmed by a single chip microcomputer according to a temperature compensation formula to carry out temperature compensation processing on the dose value and the temperature value which are sent simultaneously, and the invention belongs to the field of nuclear radiation monitoring. The method is used for temperature effect compensation of the environment gamma radiation monitoring probe, and greatly overcomes the inaccuracy of the radiation field intensity measurement value caused by the temperature effect.
Description
The invention belongs to the nuclear radiation monitoring field, be specifically related to a kind of environment gamma radiation monitoring probe temperature compensation.
Have many advantages by high-pressure ionization chamber, electrometer as environment gamma radiation monitoring probe, thereby use face is wider.Yet, when making high-pressure ionization chamber's prestage by electrometer, must there be metal-oxide-semiconductor field effect transistor to make its input stage, because of the temperature effect of metal-oxide-semiconductor field effect transistor give inevitably Radiation monitoring as a result accuracy impact, particularly for environment γ continuous monitor, because of place range of temperature under-30-40 ℃ external environment throughout the year, this influence is bigger.Overcome the influence that temperature effect brings for environment γ continuous monitoring result, become the key issue of environs radiation monitoring.Even to this day, address the above problem normally and work hard on circuit, the auxilliary strictness to metal-oxide-semiconductor field effect transistor is selected to realize temperature compensation.The real-time dosemeter temperature compensation of U.S. RSS-1012 high-pressure ionization chamber is to adopt zero-temperature coefficient point methods and single tube input.China hyperbar electricity is high to adopt two-tube input from the chamber dose rate instrument, by selecting managing, makes the working point can be on zero temperature coefficient point.Above-mentioned two kinds of methods, single tube input easily realizes zero temperature coefficient point work, but its common mode inhibition capacity is poor, and the latter will select also consistent very difficult to managing of characteristic unanimity, temperature coefficient point, in select rate below 10%, and select and also have certain loss percentage in the process.Obvious, existing method had been not only uneconomical, but also inconvenient, also be difficult to the temperature effect compensation of realizing ideal.
Task of the present invention is: provide a kind of do not do circuit improve, only to pipe is selected necessarily select, by the data processing that microcomputer software carries out temperature compensation, obtain technology new departure of ideal temperature effect compensating.
Technical scheme of the present invention comprises in order to electrometer and when it is characterized in that measuring probe have been adopted following temperature compensation as prestage, carry out environment γ radiant intensity measurement with metal-oxide-semiconductor field effect transistor as the high pressure ionization chamber of input stage:
1) adopt the metal-oxide-semiconductor field effect transistor electrometer high pressure ionization chamber in same chamber, have as the silicon diode of temperature sensor regularly to measure, when electrometer obtains environment γ radiation intensity data, the temperature sensor silicon diode obtains the temperature value in the chamber of electrometer place
2) these two kinds of data are delivered to simultaneously microsystem and are carried out the temperature compensation processing:
A. calculate real time temperature value T,
Uncompensated environment γ radiation dose rate measured value D when b. accounting temperature is T.
Scale room temperature T during c. according to the probe scale.With dose rate under the condition of different temperatures is changed the fit slope A that carries out match gained fitting a straight line with least square method, by formula
D＝D
o+A（T-T
o）
To the dose rate D of institute
oCarry out temperature compensation, obtaining the accurate dose rate value D after the temperature compensated processing under the real time temperature T,
D. the storage, developer dose rate D.
Adopt method of the present invention can obtain gratifying effect, for example, when temperature when subzero 30 ℃ change to 40 ℃, the deviation maximum of measurement result can reach 40%, corresponding temperature coefficient is 0.58%/℃; In identical range of temperature, deviation of the present invention has only 2.3%, and temperature coefficient has only 0.03%/℃.Advantages such as the present invention has that method is simple, cost is low, easy enforcement, compensation effect are good only need to increase silicon diode temperature sensor, and MOS to the corresponding reduction of the coherence request of pipe, is therefore helped suitability for industrialized production.
Fig. 1 obtains and the process software block diagram for dose rate of the present invention.
Below in conjunction with accompanying drawing the present invention is described in detail.
Concrete technical scheme of the present invention is: make temperature sensor with silicon diode, it and metal-oxide-semiconductor field effect transistor electrometer are placed in the same chamber, post the gamma ray radiator of microcurie level on the chamber outer wall, when the metal-oxide-semiconductor field effect transistor electrometer obtains environment γ radiation intensity data, the temperature sensor silicon diode also obtains the temperature value in the chamber of electrometer place, and these two kinds of data is delivered to single-chip microprocessor system simultaneously carry out the temperature compensation processing.Temperature compensation is based upon by actual measurement gained temperature compensation formula:
D=D
o+ A(T-T
o) the basis on.In the formula:
D is that temperature is T, the dose rate measured value after temperature compensated;
D
oFor temperature is T, dose rate measured value when uncompensated;
The fitting a straight line slope of measured data when A is uncompensated;
T
oScale room temperature during for instrument calibration;
T is a real time temperature.
The use of compensation formula and the compensation of temperature effect are achieved in that the dose rate value of measuring under the condition of different temperatures, and this value is not handled through temperature compensation.According to one group of uncompensated data, it is in alignment to carry out linear fit with least square method, and obtains the slope A of this fitting a straight line.Meanwhile, write down the scale room temperature T of probe scale.Obtain the dose rate data and the calculated value D that calculates with microsystem according to temperature compensation formula programming and through electrometer
o, add by temperature sensor measured temperature value T.So far, obtain the dose value D after compensation, realized comparatively desirable temperature effect compensation, make institute's dose rate value accurately, reliably.
Microsystem is seen the software block diagram that the dose rate is obtained and handled according to the programming of temperature compensation formula, is found out by block diagram the steps include:
Regularly to dose rate and temperature signal counting ()/() regularly during to deny → get dose-rate meter numerical value (→ DSRT →) get temperature signal count value (→ DTMP →) dose rate outrange deny the processing of ()/(yes) outrange →
Calculate dose rate (D
o) → institute's dose rate is advanced T(℃ of (No)/() accounting temperature value) → trip temperature correction → storage, developer dose rate D.
The present invention has the successful implementation example: used MOS field effect electrometer tube is the differential pair tube input stage, the temperature sensor silicon diode, and microsystem adopts single chip microcomputer.Measured data, uncompensated situation is listed as follows respectively with having under the compensation situation:
Situation measured data that table 1. is uncompensated
Observed temperature (℃) value 46.49 35.55 27.41 22.29 21.48 19.62
Dose rate (μ Gy/h) value 0.362 0.392 0.421 0.430 0.431 0.437
Observed temperature (℃) value 10.31 0.42-9.91-20.30-28.1
Dose rate (μ Gy/h) value 0.473 0.497 0.527 0.561 0.584
Table 2. has compensation situation instance data
Observed temperature (℃) value 37.76 29.27 20.32 10.08 10.32-10.61
Dose rate (μ Gy/h) value 0.472 0.467 0.466 0.477 0.473 0.474
Observed temperature (℃) value-19.80-30.27
Dose rate (μ Gy/h) value 0.473 0.477
And by measured data gained temperature compensation measured data figure
The present invention has good effect, finds out that from measured data table 1, table 2 compensation effect of the present invention is remarkable.When not adopting this law compensation deals, in temperature during from-30～40 ℃, measurement result deviation up 40%, temperature coefficient is 0.58%/℃.Through compensation deals of the present invention be, during from-30～40 ℃, gained measurement result deviation has only 2.3%, and temperature coefficient also has only 0.03%/℃.
Claims (1)
1, a kind of environment gamma radiation monitoring probe temperature compensation, comprise in order to electrometer and when it is characterized in that measuring probe to have been adopted following temperature compensation as prestage, carry out environment γ radiant intensity measurement as the high pressure ionization chamber of input stage with metal-oxide-semiconductor field effect transistor:
1) adopt the metal-oxide-semiconductor field effect transistor electrometer high pressure ionization chamber in same chamber, have as the silicon diode of temperature sensor regularly to measure, when electrometer obtains environment γ radiation intensity data, the temperature sensor silicon diode obtains the temperature value in the chamber of electrometer place
2) these two kinds of data are delivered to simultaneously microsystem and carried out the temperature compensation processing;
A. calculate real time temperature value T,
Uncompensated environment γ radiation dose rate measured value D when b. accounting temperature is T
o
Scale room temperature T during c. according to the probe scale
oWith dose rate under the condition of different temperatures is changed the fit slope A that carries out match gained fitting a straight line with least square method, by formula
D=D
o+A(T-T
o)
To the dose rate D of institute
oCarry out temperature compensation, obtaining the accurate dose rate value D after the temperature compensated processing under the real time temperature T,
D. the storage, developer dose rate D
o
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 93112844 CN1033720C (en) | 1993-12-23 | 1993-12-23 | Temperature compensation method for environment gamma radiation monitoring probe |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 93112844 CN1033720C (en) | 1993-12-23 | 1993-12-23 | Temperature compensation method for environment gamma radiation monitoring probe |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1104335A true CN1104335A (en) | 1995-06-28 |
| CN1033720C CN1033720C (en) | 1997-01-01 |
Family
ID=4990295
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 93112844 Expired - Fee Related CN1033720C (en) | 1993-12-23 | 1993-12-23 | Temperature compensation method for environment gamma radiation monitoring probe |
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| Country | Link |
|---|---|
| CN (1) | CN1033720C (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101315028B (en) * | 2007-05-29 | 2012-05-30 | 中国石油天然气集团公司 | Non-linear temperature compensation method for digital sound wave variable density sonic system |
| CN101644779B (en) * | 2009-08-28 | 2012-10-31 | 中国辐射防护研究院 | Gamma radiation field dose rate rapid measuring method |
| TWI497102B (en) * | 2012-10-31 | 2015-08-21 | Iner Aec Executive Yuan | Ionization chamber with built-in temperature sensor |
| CN106970409A (en) * | 2017-05-17 | 2017-07-21 | 成都理工大学 | The γ absorbed dose rates instrument corrected with soil moisture and bearing calibration |
| CN108572381A (en) * | 2017-03-09 | 2018-09-25 | 中国辐射防护研究院 | The measuring method of * ' (3) in a kind of β-γ mixed radiation fields |
| CN108572382A (en) * | 2017-03-09 | 2018-09-25 | 中国辐射防护研究院 | The measuring method of H ＇ (0.07) in a kind of β-γ mixed radiation fields |
| CN108627865A (en) * | 2017-03-22 | 2018-10-09 | 中国科学院国家空间科学中心 | A method of correcting the temperature effect of space radiation dosemeter sensor |
| CN111045074A (en) * | 2019-12-26 | 2020-04-21 | 上海金鹏源辐照技术有限公司 | Calibration method for response of irradiation dose with temperature |
-
1993
- 1993-12-23 CN CN 93112844 patent/CN1033720C/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101315028B (en) * | 2007-05-29 | 2012-05-30 | 中国石油天然气集团公司 | Non-linear temperature compensation method for digital sound wave variable density sonic system |
| CN101644779B (en) * | 2009-08-28 | 2012-10-31 | 中国辐射防护研究院 | Gamma radiation field dose rate rapid measuring method |
| TWI497102B (en) * | 2012-10-31 | 2015-08-21 | Iner Aec Executive Yuan | Ionization chamber with built-in temperature sensor |
| CN108572381B (en) * | 2017-03-09 | 2022-05-17 | 中国辐射防护研究院 | Method for measuring and calculating H' (3) in beta-gamma mixed radiation field |
| CN108572382B (en) * | 2017-03-09 | 2022-05-20 | 中国辐射防护研究院 | Method for measuring and calculating H' (0.07) in beta-gamma mixed radiation field |
| CN108572381A (en) * | 2017-03-09 | 2018-09-25 | 中国辐射防护研究院 | The measuring method of * ' (3) in a kind of β-γ mixed radiation fields |
| CN108572382A (en) * | 2017-03-09 | 2018-09-25 | 中国辐射防护研究院 | The measuring method of H ＇ (0.07) in a kind of β-γ mixed radiation fields |
| CN108627865A (en) * | 2017-03-22 | 2018-10-09 | 中国科学院国家空间科学中心 | A method of correcting the temperature effect of space radiation dosemeter sensor |
| CN108627865B (en) * | 2017-03-22 | 2019-10-11 | 中国科学院国家空间科学中心 | A method of the temperature effect of amendment space dosimeter sensor |
| CN106970409A (en) * | 2017-05-17 | 2017-07-21 | 成都理工大学 | The γ absorbed dose rates instrument corrected with soil moisture and bearing calibration |
| CN106970409B (en) * | 2017-05-17 | 2023-08-25 | 成都理工大学 | Gamma absorption dose rate instrument with soil humidity correction function and correction method |
| CN111045074A (en) * | 2019-12-26 | 2020-04-21 | 上海金鹏源辐照技术有限公司 | Calibration method for response of irradiation dose with temperature |
| CN111045074B (en) * | 2019-12-26 | 2023-07-28 | 上海金鹏源辐照技术有限公司 | Calibration method for response of irradiation dose along with temperature |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1033720C (en) | 1997-01-01 |
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