CN110429846B - Hybrid single-phase high-power inverter topology and control method thereof - Google Patents

Hybrid single-phase high-power inverter topology and control method thereof Download PDF

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CN110429846B
CN110429846B CN201910648207.2A CN201910648207A CN110429846B CN 110429846 B CN110429846 B CN 110429846B CN 201910648207 A CN201910648207 A CN 201910648207A CN 110429846 B CN110429846 B CN 110429846B
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current
thyristor
bipolar transistor
gate turn
inductor
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CN110429846A (en
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全晓庆
汪飞
冯夏云
任林涛
施云杰
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University of Shanghai for Science and Technology
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J3/00—Circuit arrangements for ac mains or ac distribution networks
    • H02J3/38—Arrangements for parallely feeding a single network by two or more generators, converters or transformers
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/505—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
    • H02M7/515—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
    • H02M7/521—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only in a bridge configuration
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration

Abstract

The invention provides a hybrid single-phase high-power inverter topology and a control method thereof, wherein the inverter topology comprises 4 insulated gate bipolar transistors, 4 gate turn-off thyristors, 4 freewheeling diodes, 5 inductors, 2 capacitors and 2 current sensors. On the basis of the traditional single-phase voltage type full-bridge inverter circuit, the single-phase current source type full-bridge inverter circuit based on the gate turn-off thyristor GTO is connected in parallel, and the power of the inverter circuit can be integrally improved. The invention can effectively reduce the cost of the high-power inverter circuit, because the novel topology is formed by connecting two single-phase full-bridge inverter circuits in parallel, grid-connected current can be provided by two branches, and the current-carrying pressure of a switching tube in the traditional single-phase full-bridge inverter circuit can be effectively reduced by utilizing the grid-connected current which flows through a gate pole of a newly-added branch and can turn off a thyristor, thereby realizing the application of the switching tube with low power to the occasion of high-power inverter grid connection and effectively reducing the cost of the high-power inverter circuit in practice.

Description

Hybrid single-phase high-power inverter topology and control method thereof
Technical Field
The invention aims at the field of grid connection of power electronic inverters, and particularly relates to a hybrid single-phase high-power inverter topology and a control method thereof.
Background
With the rapid development of social economy, the application field of the inverter is gradually wide, and meanwhile, the requirements on the output performance, the working reliability, the service life, the cost performance and the like of the inverter are higher and higher, for example, the capacity of the inverter required by engineering is continuously increased, the power of an inverter power supply serving as an important index of the output performance also faces more and more serious challenges, especially, in the aspect of industrial power utilization, equipment such as an electric arc furnace of a large-scale steel mill and the like needs dozens of kiloamperes of working current, and the power is as high as 500 MW. Therefore, an inverter parallel technology is proposed and widely applied to the fields of rail traction, new energy power generation, high-voltage direct-current transmission and the like. However, the existing inverter parallel topology adopts the same switching devices, wherein Insulated Gate Bipolar Transistors (IGBT) are used, and although a larger grid-connected current is obtained through parallel connection under the condition of a certain output voltage so as to improve the output power of the inverter, under the occasion of high-power requirement, the number of inverters required by the inverter parallel technology is large, and the cost is high; communication is needed among the inverters, and interconnection lines are needed among the inverters in different parts of the control mode, so that the reliability of the system is reduced.
Disclosure of Invention
The invention aims to provide a hybrid single-phase high-power inverter topology and a control method thereof aiming at the defects of the prior art.
In order to achieve the purpose, the invention adopts the following technical scheme:
a hybrid single-phase high-power inverter topology is based on an IGBT voltage source type inverter and a GTO current source type inverter and comprises a first insulated gate bipolar transistor, a second insulated gate bipolar transistor, a third insulated gate bipolar transistor, a fourth insulated gate bipolar transistor, a first gate turn-off thyristor, a second gate turn-off thyristor, a third gate turn-off thyristor, a fourth gate turn-off thyristor, a first diode, a second diode, a third diode, a fourth diode, a first inductor, a second inductor, a third inductor, a fourth inductor, a fifth inductor, a first capacitor, a second capacitor, a first current sensor and a second current sensor; the positive electrode of the direct current bus is connected with one end of the first inductor, the collector electrode of the first insulated gate bipolar transistor, the collector electrode of the second insulated gate bipolar transistor, the cathode of the first diode and the cathode of the second diode; the cathode of the direct current bus is connected with the cathode of the second gate turn-off thyristor, the cathode of the fourth gate turn-off thyristor, the emitter of the second insulated gate bipolar transistor, the emitter of the fourth insulated gate bipolar transistor, the anode of the second diode and the anode of the fourth diode; the other end of the first inductor is connected with the anode of the first gate turn-off thyristor and the anode of the third gate turn-off thyristor; the cathode of the first gate turn-off thyristor is connected with the anode of the second gate turn-off thyristor, one end of the first capacitor and one end of the second inductor; the cathode of the third gate turn-off thyristor is connected with the anode of the fourth gate turn-off thyristor, one end of the second capacitor and one end of the fifth inductor; the emitter of the first insulated gate bipolar transistor is connected with the collector of the second insulated gate bipolar transistor and one end of the third inductor; the emitter of the third insulated gate bipolar transistor is connected with the collector of the fourth insulated gate bipolar transistor and one end of the fourth inductor; one end of the power grid is connected with the other end of the second inductor and the other end of the third inductor; the other end of the power grid is connected with the other end of the fourth inductor and the other end of the fifth inductor.
Four switching tubes consisting of an IGBT and a freewheeling diode reversely connected with the IGBT in parallel form a single-phase full-bridge voltage source type inverter topology; the single-phase full-bridge current source type inversion topology is formed by a first inductor and four gate turn-off thyristors; the hybrid single-phase high-power inversion topological structure based on the IGBT voltage source type inverter and the GTO current source type inverter is formed by connecting a single-phase full-bridge voltage source type inversion topology and a single-phase full-bridge current source type inversion topology in parallel.
A first inductor with a larger inductance value is connected in series on the side of the direct current bus, so that the current i flowing through the gate pole turn-off thyristor1The current source is basically free of pulsation, so that the GTO-based inverting branch circuit presents current source characteristics; four switching tubes consisting of IGBT and freewheeling diode connected in reverse parallel with IGBT form a single-phase full-bridge voltage source type inverter topology by applying current i2The closed-loop control of the grid-connected current is further realized.
A control method for full-power operation of a hybrid single-phase high-power inversion topology is based on the hybrid single-phase high-power inversion topology and specifically comprises the following steps:
the method comprises the following steps: the first current sensor measures the current i flowing through the gate turn-off thyristor1The actual value is used for controlling the gate turn-off thyristor GTO current source type single-phase full-bridge inversion branch circuit. Using current i through gate turn-off thyristor1Current i flowing through gate turn-off thyristor for control purposes1The reference value of (2) is composed of two parts, namely sinwt and 1/3 output unit signals multiplied by 2i after passing through a comparatorrefThe result of/3 is multiplied by-2 i with-1/3 and sinwt output unit signals after passing through the comparatorrefSum of the results of/3, current i flowing through gate turn-off thyristor1With the actual current-through gate turn-off thyristorCurrent i of1Error of (1), passing through GGTOController and GPGTOAfter the controller, the current i flowing through the gate turn-off thyristor is obtained1；
Step two: the second current sensor measures a current i flowing through the IGBT2Using the actual value of (a), and the control target i in step one1And controlling the insulated gate bipolar transistor IGBT voltage source type single-phase full-bridge inversion branch. Using the current i flowing through an insulated gate bipolar transistor2For control purposes, the grid-connected current reference amplitude irefMultiplying with sinwt to obtain a grid-connected current reference value irefsinwt，irefsinwt and the current i flowing through the gate turn-off thyristor1Taking a difference to obtain a current i flowing through the insulated gate bipolar transistor2The calculation method is shown in formula (1);
i2_ref＝irefsinwt-i1 (1)
this value is related to the actual current i flowing through the IGBT2Error of (1), passing through GIGBTAfter the controller, control GPIGBTThen the current i is obtained2。
Compared with the prior art, the circuit has the advantages that:
the invention can effectively reduce the cost of the high-power inverter circuit, and because the novel topology is formed by connecting two single-phase full-bridge inverter circuits in parallel, the grid-connected current i is mainly formed by the output current i of the voltage source type inverter topology based on the IGBT2And GTO-based current source type inverter topology output current i1And obtaining the data through merging at a grid-connected point. By utilizing the grid-connected current which flows through the gate pole of the newly added branch and can turn off the thyristor, the current-carrying pressure of the switching tube in the traditional single-phase full-bridge inverter circuit can be effectively reduced, so that the switching tube with low power can be applied to the occasion of high-power inversion grid connection, and the cost of the high-power inverter circuit in practice is effectively reduced.
Drawings
Fig. 1 is a schematic diagram of a hybrid single-phase high-power inverter topology.
Fig. 2a to 2c are switching mode diagrams (wherein the dotted line is a GTO conduction path and the dot-dash line is an IGBT conduction path) in the positive half cycle of the grid voltage.
Fig. 2d to 2f are switching mode diagrams (wherein the dotted line is a GTO conduction path, and the dot-dash line is an IGBT conduction path) in the negative half cycle of the grid voltage.
FIG. 3 shows grid-connected current i and current type single-phase full-bridge inverter circuit branch grid-connected current i1(gate turn-off thyristor GTO supply) voltage type single-phase full-bridge inverter circuit branch grid-connected current i2(provided for insulated gate bipolar transistor IGBT) and the insulated gate bipolar transistor and gate turn-off thyristor in the embodiments.
Fig. 4 is a block diagram of a control structure of a single-phase full-bridge inverter branch based on a GTO current source type when an inverter operates at full power.
Fig. 5 is a block diagram of a control structure of the IGBT-based voltage source type single-phase full-bridge inverter branch when the inverter operates at full power.
Detailed Description
The following description of the present invention will be made in conjunction with the accompanying drawings and examples of full-power inverter operation.
The topology of the present invention is shown in fig. 1, and the following analysis is performed on the premise of ideal devices for devices in the circuit structure.
A mixed single-phase high-power inversion topology based on an IGBT voltage source type inverter and a GTO current source type inverter comprises a first insulated gate bipolar transistor V1A second insulated gate bipolar transistor V2A third insulated gate bipolar transistor V3And a fourth insulated gate bipolar transistor V4A first gate turn-off thyristor VT1A second gate turn-off thyristor VT2A third gate turn-off thyristor VT3A fourth gate turn-off thyristor VT4A first diode VD1A second diode VD2A third diode VD3And a fourth diode VD4A first inductor L1A second inductor L2A third inductor L3A fourth inductor L4A fifth inductor L5A first capacitor C1A second capacitor C2First current sensor CT1And a second current sensor CT2(ii) a Positive pole of DC bus and first inductance L1First insulated gate bipolar transistor V1Collector of, and a second insulated gate bipolar transistor V2Collector electrode, first diode VD1Cathode of (2), second diode VD2The cathode of (a) is connected; thyristor VT capable of being turned off by negative pole and second gate pole of direct current bus2Cathode, fourth gate turn-off thyristor VT4Cathode of (2), second insulated gate bipolar transistor V2Emitter of (2), fourth insulated gate bipolar transistor V4Emitter electrode of, second diode VD2Anode of (1), fourth diode VD4The anode of (2) is connected; first inductance L1And the other end of the first gate turn-off thyristor VT1Anode and third gate turn-off thyristor VT3The anode of (2) is connected; first gate turn-off thyristor VT1With a cathode and a second gate turn-off thyristor VT2Anode of, first capacitor C1One terminal of (1), a second inductance L2Is connected with one end of the connecting rod; third gate turn-off thyristor VT3With turn-off thyristor VT having cathode and fourth gate4Anode of, a second capacitor C2One end of (1), a fifth inductance L5Is connected with one end of the connecting rod; first insulated gate bipolar transistor V1And the second insulated gate bipolar transistor V2Collector electrode of, and third inductor L3One end of the two ends are connected; third insulated gate bipolar transistor V3And the fourth insulated gate bipolar transistor V4Collector electrode of, and fourth inductor L4Is connected with one end of the connecting rod; one end of the power grid and the second inductor L2Another end of (1), a third inductance L3The other end of the first and second connecting rods is connected; the other end of the power grid and a fourth inductor L4Another end of (1), a fifth inductance L5The other end of the connecting rod is connected.
The corresponding switching mode diagram of the circuit at this stage during the positive half cycle of the grid voltage (current) can be represented by fig. 2 a-2 c.
(1)0～t1Time, grid-connected current only by electricityVoltage type single-phase full-bridge inverter circuit branch grid-connected current i2(provided by insulated gate bipolar transistor IGBT) the switching mode diagram of the circuit at this stage is shown in FIG. 2a, the first insulated gate bipolar transistor V1And a fourth insulated gate bipolar transistor V4On, grid-connected current flows through the first insulated gate bipolar transistor V1A third inductor L3A fourth inductor L4And a fourth insulated gate bipolar transistor V4And supplying power to the power grid.
(2)t1～t2Time and grid-connected current are formed by branch current convergence of a voltage type single-phase full-bridge inverter circuit and a current type single-phase full-bridge inverter circuit (gate turn-off thyristor GTO and insulated gate bipolar transistor IGBT are provided together), the switching mode diagram of the circuit at the stage is shown in figure 2b, the first gate turn-off thyristor VT1A fourth gate turn-off thyristor VT4A second insulated gate bipolar transistor V2A third insulated gate bipolar transistor V3Are simultaneously conducted, the branch current i1Flows through the first inductor L1A first gate turn-off thyristor VT1A second inductor L2A fifth inductor L5A fourth gate turn-off thyristor VT4Branch current i2Flows through the third insulated gate bipolar transistor V3A fourth inductor L4A third inductor L3A second insulated gate bipolar transistor V2(ii) a The two branch currents act together to form grid-connected current.
(3)t2～t3Time and grid-connected current are formed by branch current convergence of a voltage type single-phase full-bridge inverter circuit and a current type single-phase full-bridge inverter circuit (gate turn-off thyristor GTO and insulated gate bipolar transistor IGBT are provided together), the switching mode diagram of the circuit at the stage is shown in figure 2c, the first gate turn-off thyristor VT1A fourth gate turn-off thyristor VT4A first insulated gate bipolar transistor V1And a fourth insulated gate bipolar transistor V4Are simultaneously conducted, the branch current i1Flows through the first inductor L1A first gate turn-off thyristor VT1A second inductor L2A fifth inductor L5A fourth gate turn-off thyristor VT4Branch current i2Flows through the first insulated gate bipolar transistor V1A third inductor L3A fourth inductor L4And a fourth insulated gate bipolar transistor V4(ii) a The two branch currents act together to form grid-connected current.
(4)t3～t4Time and grid-connected current are formed by branch current convergence of a voltage type single-phase full-bridge inverter circuit and a current type single-phase full-bridge inverter circuit (gate turn-off thyristor GTO and insulated gate bipolar transistor IGBT are provided together), the switching mode diagram of the circuit at the stage is shown in figure 2b, the first gate turn-off thyristor VT1A fourth gate turn-off thyristor VT4A second insulated gate bipolar transistor V2A third insulated gate bipolar transistor V3Are simultaneously conducted, the branch current i1Flows through the first inductor L1A first gate turn-off thyristor VT1A second inductor L2A fifth inductor L5A fourth gate turn-off thyristor VT4Branch current i2Flows through the third insulated gate bipolar transistor V3A fourth inductor L4A third inductor L3A second insulated gate bipolar transistor V2(ii) a The two branch currents act together to form grid-connected current.
(5)t4～t5Time and grid-connected current are only connected with the current i by a voltage type single-phase full-bridge inverter circuit branch2(provided by insulated gate bipolar transistor IGBT) the switching mode diagram of the circuit at this stage is shown in FIG. 2a, the first insulated gate bipolar transistor V1And a fourth insulated gate bipolar transistor V4On, grid-connected current flows through the first insulated gate bipolar transistor V1A third inductor L3A fourth inductor L4And a fourth insulated gate bipolar transistor V4And supplying power to the power grid.
The corresponding switching mode diagram of the circuit at this stage during the negative half cycle of the grid voltage (current) can be represented by fig. 2 d-2 f (with the elements and connections darkened relative to fig. 1 in the off-state).
(6)t5～t6Time and grid-connected current are only connected with the current i by a voltage type single-phase full-bridge inverter circuit branch2(provided by insulated gate bipolar transistor IGBT) and the switching mode diagram of the circuit at this stage is shown in FIG. 2d, with a second insulated gate bipolar transistor V2A third insulated gate bipolar transistor V3On, grid-connected current flows through the third insulated gate bipolar transistor V3A fourth inductor L4A third inductor L3A second insulated gate bipolar transistor V2And supplying power to the power grid.
(7)t6～t7Time and grid-connected current are formed by branch current convergence of a voltage type single-phase full-bridge inverter circuit and a current type single-phase full-bridge inverter circuit (gate turn-off thyristor GTO and insulated gate bipolar transistor IGBT are provided together), the switching mode diagram of the circuit at the stage is shown in figure 2e, and a second gate turn-off thyristor VT2A third gate turn-off thyristor VT3A first insulated gate bipolar transistor V1And a fourth insulated gate bipolar transistor V4Conducting, branch current i1Flows through the first inductor L1A third gate turn-off thyristor VT3A fifth inductor L5A second inductor L2A second gate turn-off thyristor VT2Branch current i2Flows through the first insulated gate bipolar transistor V1A third inductor L3A fourth inductor L4And a fourth insulated gate bipolar transistor V4(ii) a The two branch currents act together to form grid-connected current.
(8)t7～t8Time and grid-connected current are formed by branch current convergence of a voltage type single-phase full-bridge inverter circuit and a current type single-phase full-bridge inverter circuit (gate turn-off thyristor GTO and insulated gate bipolar transistor IGBT are provided together), the switching mode diagram of the circuit at the stage is shown in figure 2f, and a second gate turn-off thyristor VT2A third gate turn-off thyristor VT3A second insulated gate bipolar transistor V2A third insulated gate bipolar transistor V3Conducting, branch current i1Flows through the first inductor L1A third gate turn-off thyristor VT3A fifth inductor L5The first stepTwo inductors L2A second gate turn-off thyristor VT2Branch current i2Flows through the third insulated gate bipolar transistor V3A fourth inductor L4A third inductor L3A second insulated gate bipolar transistor V2(ii) a The two branch currents act together to form grid-connected current.
(9)t8～t9Time and grid-connected current are formed by branch current convergence of a voltage type single-phase full-bridge inverter circuit and a current type single-phase full-bridge inverter circuit (gate turn-off thyristor GTO and insulated gate bipolar transistor IGBT are provided together), the switching mode diagram of the circuit at the stage is shown in figure 2e, and a second gate turn-off thyristor VT2A third gate turn-off thyristor VT3A first insulated gate bipolar transistor V1And a fourth insulated gate bipolar transistor V4Conducting, branch current i1Flows through the first inductor L1A third gate turn-off thyristor VT3A fifth inductor L5A second inductor L2A second gate turn-off thyristor VT2Branch current i2Flows through the first insulated gate bipolar transistor V1A third inductor L3A fourth inductor L4And a fourth insulated gate bipolar transistor V4(ii) a The two branch currents act together to form grid-connected current.
(10)t9～t10Time and grid-connected current are only connected with the current i by a voltage type single-phase full-bridge inverter circuit branch2(provided by insulated gate bipolar transistor IGBT) and the switching mode diagram of the circuit at this stage is shown in FIG. 2d, with a second insulated gate bipolar transistor V2A third insulated gate bipolar transistor V3Conducting grid-connected current through a third insulated gate bipolar transistor V3A fourth inductor L4A third inductor L3A second insulated gate bipolar transistor V2And supplying power to the power grid.
The control signal and the on-off current waveform of the switching tube in an ideal state in the specific implementation of the example are shown in fig. 3. Thyristor VT with first gate turn-off1And a first insulated gate bipolar transistor V1For example, for a power frequency cycleThe states in (b) are briefly described. Assuming that an inverter of a hybrid single-phase high-power inversion topology based on an IGBT voltage source type inverter and a GTO current source type inverter runs at full power, the peak value of grid-connected current is 600A, and when the grid-connected current i reaches 1/3 amplitude, namely t1Time gate turn-off thyristor GTO1Is turned on at this time t1About 1.08 ms; at full power operation, i12/3, t with amplitude of expected grid-connected current4About 8.92ms, t6About 11.08ms, t9Approximately 18.92 ms.
The control structure block diagram of the current source type single-phase full-bridge inversion branch circuit based on the gate turn-off thyristor GTO when the inverter runs at full power is shown in FIG. 4. Wherein irefThe amplitude of the expected grid-connected current i; w is the grid angular frequency; gGTOThe controller is a GTO bridge arm converter controller, and common controllers such as a proportional-integral controller PI, a resonance controller PR, a repetitive controller RC and the like can be selected as required; gPGTOIs a bridge arm converter (a thyristor which can be turned off by 4 gate poles, a first inductor L1A second inductor L2A fifth inductor L5A first capacitor C1And a second capacitor C2Composition). Using current i through gate turn-off thyristor1Current i flowing through gate turn-off thyristor for control purposes1The reference value consists of two parts, i.e. sinwt and 1/3 multiplied by 2irefThe result of/3 is multiplied by-2 i times the output of-1/3 and sinwt through the comparatorrefSum of the results of/3, current i flowing through gate turn-off thyristor1And the current i actually flowing through the gate turn-off thyristor1Error of (1), passing through GGTOController and GPGTOAfter the controller, the current i flowing through the gate turn-off thyristor is obtained1. Control of grid-connected current i based on GTO current source type single-phase full-bridge inversion branch circuit as shown in FIG. 41。
Fig. 5 shows a block diagram of a control structure of a voltage source type single-phase full-bridge inverter branch based on an insulated gate bipolar transistor IGBT when the inverter operates at full power. Wherein irefThe amplitude of the expected grid-connected current i; w is the grid angular frequency;GIGBTcommon converter controllers such as a proportional-integral controller (PI), a resonance controller (PR), a Repetitive Controller (RC) and the like can be selected as required for the IGBT bridge arm converter controller; gPIGBTIs a bridge arm converter (composed of 4 insulated gate bipolar transistors, 4 freewheeling diodes and a third inductor L3A fourth inductor L4Composition). Using the current i flowing through an insulated gate bipolar transistor2For control purposes, the grid-connected current reference amplitude irefMultiplying with sinwt to obtain a grid-connected current reference value irefsinwt，irefsinwt and the current i flowing through the gate turn-off thyristor1Taking a difference to obtain a current i flowing through the insulated gate bipolar transistor2See formula (1) for the calculation method.
i2_ref＝irefsinwt-i1(1)
This value is related to the actual current i flowing through the IGBT2Error of (1), passing through GIGBTAfter the controller, control GPIGBTThen the current i is obtained2. Controlling the grid-connected current i based on the IGBT voltage source type single-phase full-bridge inversion branch circuit according to a control block diagram 52。
From the above analysis, it can be seen that the first inductance L is assumed1Large, the current i flowing through the gate turn-off thyristor1Basically, the current i flowing through the insulated gate bipolar transistor is constant, assuming that the current amplitude is 2/3 of the expected grid-connected current2The peak value of the gate turn-off thyristor is only 1/3 of the expected grid-connected current, the current carrying capacity of the gate turn-off thyristor GTO is strong, and the high-power GTO can be used for providing a larger part of grid-connected current in a high-power inversion occasion, so that the requirement on the high power of the insulated gate bipolar transistor IGBT is reduced. Therefore, by using the hybrid single-phase high-power inverter topology based on the IGBT voltage source type inverter and the GTO current source type inverter and the control method thereof, the application of a low-power switch tube to a high-power inverter occasion can be realized, and the cost of a high-power inverter circuit is effectively reduced.

Claims (1)

1. A mixed single-phase high-power inversion topology based on an IGBT voltage source type inverter and a GTO current source type inverterThe device, its characterized in that: comprising a first insulated gate bipolar transistor (V)1) A second insulated gate bipolar transistor (V)2) And a third insulated gate bipolar transistor (V)3) And a fourth insulated gate bipolar transistor (V)4) A first gate turn-off thyristor (VT)1) A second gate turn-off thyristor (VT)2) A third gate turn-off thyristor (VT)3) A fourth gate turn-off thyristor (VT)4) A first diode (VD)1) A second diode (VD)2) A third diode (VD)3) And a fourth diode (VD)4) A first inductor (L)1) A second inductor (L)2) A third inductor (L)3) A fourth inductor (L)4) A fifth inductor (L)5) A first capacitor (C)1) A second capacitor (C)2) A first current sensor (CT)1) And a second current sensor (CT)2) (ii) a Positive pole of DC bus and first inductance (L)1) First insulated gate bipolar transistor (V)1) Collector of (2), second insulated gate bipolar transistor (V)2) Collector electrode of (1), first diode (VD)1) Cathode of (d), second diode (VD)2) The cathode of (a) is connected; thyristor (VT) capable of being turned off by negative pole and second gate pole of direct current bus2) Cathode, fourth gate turn-off thyristor (VT)4) Second insulated gate bipolar transistor (V)2) Emitter of (2), fourth insulated gate bipolar transistor (V)4) Emitter electrode of (d), second diode (VD)2) Anode of (d), fourth diode (VD)4) The anode of (2) is connected; first inductance (L)1) And the other end of the first gate turn-off thyristor (VT)1) Anode and third gate turn-off thyristor (VT)3) The anode of (2) is connected; first gate turn-off thyristor (VT)1) With a second gate turn-off thyristor (VT)2) Anode of (2), first capacitor (C)1) One terminal of (a), a second inductance (L)2) Is connected with one end of the connecting rod; a third gate turn-off thyristor (VT)3) With a fourth gate turn-off thyristor (VT)4) Anode of (2), second capacitor (C)2) One terminal of (1), a fifth inductance (L)5) Is connected with one end of the connecting rod; first insulated gateBipolar transistor (V)1) And a second insulated gate bipolar transistor (V)2) Collector electrode, third inductor (L)3) One end of the two ends are connected; third insulated gate bipolar transistor (V)3) And a fourth insulated gate bipolar transistor (V)4) Collector electrode, fourth inductor (L)4) Is connected with one end of the connecting rod; one end of the grid and the second inductor (L)2) Another end of (1), a third inductance (L)3) The other end of the first and second connecting rods is connected; the other end of the power grid is connected with a fourth inductor (L)4) Another end of (1), a fifth inductance (L)5) The other end of the first and second connecting rods is connected;
composed of IGBT (V)1、V2、V3、V4) And a freewheeling diode (VD) connected in inverse parallel therewith1、VD2、VD3、VD4) Four switch tubes (S) formed1、S2、S3、S4) Forming a single-phase full-bridge voltage source type inversion topology; by a first inductance (L)1) And four gate turn-off thyristors (VT)1、VT2、VT3、VT4) Forming a single-phase full-bridge current source type inversion topology; the hybrid single-phase high-power inversion topological structure based on the IGBT voltage source type inverter and the GTO current source type inverter is formed by connecting a single-phase full-bridge voltage source type inversion topology and a single-phase full-bridge current source type inversion topology in parallel;
a first inductor (L) with larger inductance value is connected in series at the side of the direct current bus1) Making the current i1 flowing through the gate turn-off thyristor substantially ripple-free, so that the GTO-based inverting branch presents a current source characteristic; IGBT (V)1、V2、V3、V4) And a freewheeling diode (VD) connected in inverse parallel therewith1、VD2、VD3、VD4) Four switch tubes (S) formed1、S2、S3、S4) Form a single-phase full-bridge voltage source type inversion topology by applying a counter current i2The closed-loop control of the grid-connected current is further realized;
the control method for the hybrid single-phase high-power inverter topology during full-power operation specifically comprises the following steps:
the method comprises the following steps: first Current sensor (CT)1) The result is the current i flowing through the gate turn-off thyristor1The actual value is used for controlling a gate turn-off thyristor GTO current source type single-phase full-bridge inversion branch circuit; using current i through gate turn-off thyristor1Current i flowing through gate turn-off thyristor for control purposes1The reference value of (2) is composed of two parts, namely sinwt and 1/3 output unit signals multiplied by 2i after passing through a comparatorrefThe result of/3 is multiplied by-2 i with-1/3 and sinwt output unit signals after passing through the comparatorrefSum of the results of/3, current i flowing through gate turn-off thyristor1And the current i actually flowing through the gate turn-off thyristor1The error of (2) is obtained through the GGTO controller and the GPGTO controller, namely the current i flowing through the gate turn-off thyristor1；
Step two: second current sensor (CT)2) The result is the current i flowing through the IGBT2Using the actual value of (a), and the control target i in step one1Controlling an insulated gate bipolar transistor IGBT voltage source type single-phase full-bridge inversion branch circuit; using the current i flowing through an insulated gate bipolar transistor2For control purposes, the grid-connected current reference amplitude irefMultiplying with sinwt to obtain a grid-connected current reference value irefsinwt，irefsinwt and the current i flowing through the gate turn-off thyristor1Taking a difference to obtain a current i flowing through the insulated gate bipolar transistor2The calculation method is shown in formula (1);
i2_ref＝irefsinwt-i1 (1)
this value is related to the actual current i flowing through the IGBT2Error of (1), passing through GIGBTAfter the controller, control GPIGBTThen the current i is obtained2。
CN201910648207.2A 2019-07-18 2019-07-18 Hybrid single-phase high-power inverter topology and control method thereof Active CN110429846B (en)

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