CN110429801A - A kind of chip control circuit and implementation method based on SR technology - Google Patents
A kind of chip control circuit and implementation method based on SR technology Download PDFInfo
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- CN110429801A CN110429801A CN201910739511.8A CN201910739511A CN110429801A CN 110429801 A CN110429801 A CN 110429801A CN 201910739511 A CN201910739511 A CN 201910739511A CN 110429801 A CN110429801 A CN 110429801A
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/02—Conversion of AC power input into DC power output without possibility of reversal
- H02M7/04—Conversion of AC power input into DC power output without possibility of reversal by static converters
- H02M7/12—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Electronic Switches (AREA)
Abstract
The invention discloses a kind of chip control circuit and implementation method based on SR technology, including comparator OP1, OP2, OP3, Gate ON-OFF control circuit, driver, switch S, current control circuit make Vds compared with threshold voltage by comparator OP1, OP2, Gate ON-OFF control circuit is set to output control signals to driver, for controlling the switch of metal-oxide-semiconductor grid；During transformer secondary afterflow, secondary current is gradually reduced, Vds is smaller and smaller, when Vds is less than certain value, comparator OP3 control switch S closure, reduce metal-oxide-semiconductor grid voltage, simultaneously, the grid voltage that current control circuit passes through metal-oxide-semiconductor, the pull-down current of Ron and secondary current size control metal-oxide-semiconductor, reduce pull-down current suitably, regulation is convenient, there is the problem of excessively adjustment when avoiding comparator OP3 control grid voltage, reduce the power consumption of entire circuit, improve the working efficiency of circuit, and comparator has the characteristic of quick response, be conducive to improve adjustment speed.
Description
Technical field
The present invention relates to synchronous rectification fields, specifically, being to be related to a kind of chip controls electricity based on SR technology
Road and implementation method.
Background technique
In traditional AC-DC system, as shown in Figure 1, being a diode on secondary side, since efficiency requires increasingly
Height, the forward voltage drop of diode are typically all 0.7V or more, this power consumption is especially big, more next at present to realize high energy efficiency
More tend to using SR technology, i.e., replace original diode with SR (synchronous rectification) chip and metal-oxide-semiconductor, reduces diode pressure
Drop improves whole efficiency；When realizing SR control, the Vds voltage of secondary side metal-oxide-semiconductor is sampled, SR Gate is controlled by Vds voltage
Switch, Vds is the VD pin of chip and the voltage difference of VSS pin.
Existing method be by the voltage to Vds compared with threshold voltage, be modulated at Vds in the section of restriction, adopt
Circuit diagram is as shown in Fig. 2, the circuit is made of three comparators and voltage source, two diodes and driver, finally in fact
Now the Vds of input is controlled in -36mV~-30mV, but when Gate voltage reduces, Gate voltage is not easy to, and Gate
Voltage is smaller, bigger on the Ron of metal-oxide-semiconductor influence, and Gate decline causes Ron excessive too much, excessive so as to cause Vds*I, causes
Power consumption increases, and reduces the efficiency of total system.
Summary of the invention
The purpose of the present invention is to provide a kind of chip control circuit and implementation method based on SR technology, solves existing control
That there are power consumptions is big for method processed, leads to low efficiency, and the problem of Gate regulating and controlling voltage inconvenience.
To achieve the above object, The technical solution adopted by the invention is as follows:
A kind of chip control circuit based on SR technology, including transformer, metal-oxide-semiconductor, further include comparator OP1, OP2,
OP3, the Gate ON-OFF control circuit with signal input part ON, OFF and signal output end, input terminal are connected to Gate switch control
The driver of circuit signal output end processed, is connected to the switch S of driver output end, and is connected to the electricity of the switch S other end
Flow control circuit, the inverting input terminal of the comparator OP1 access threshold voltage vt h1, the positive input of the comparator OP2
It terminating into threshold voltage vt h2, the inverting input terminal of the comparator OP3 accesses threshold voltage vt h3, the comparator OP1,
The normal phase input end of OP3 and the inverting input terminal of comparator OP2 are connect with the drain electrode of metal-oxide-semiconductor, the output of the comparator OP1
End is connect with the signal input part OFF of Gate ON-OFF control circuit, output end and Gate the switch control electricity of the comparator OP2
The signal input part ON connection on road, the driver output end are connect with the grid of the tie point of switch S and metal-oxide-semiconductor.
Further, described threshold voltage vt h1, Vth2 and Vth3 are provided by independent voltage source, and threshold voltage value
It is sequentially reduced, the other end of the voltage source and the source electrode connect and ground of metal-oxide-semiconductor.
Further, the current control circuit includes the electricity that one end is connect with metal-oxide-semiconductor grid, the other end is grounded after connecting
R1 and resistance R2 is hindered, the first voltage current converter circuit being connected on resistance R1, R2 tie point is connected to metal-oxide-semiconductor drain electrode
Amplifier, the second voltage current converter circuit and input terminal for being connected to amplifier out are connected to first voltage
Current selecting circuit on current converter circuit, second voltage current converter circuit, the output end of the current selecting circuit are defeated
Pull-down current out.
Further, the current selecting circuit includes operational amplifier, and grid is connected to operational amplifier output terminal
The source electrode connection of NMOS tube, one end and NMOS tube, the variable resistance of other end ground connection and normal phase input end access input voltage
Multiple comparators, the drain electrode of the non-inverting input terminal of the operational amplifier and metal-oxide-semiconductor connects, the reverse phase of the operational amplifier
Input terminal and the source electrode of NMOS tube connect, and the inverting input terminal of the comparator accesses different threshold voltages, the comparator
Output signal be used to control the adjusting of variable resistance resistance value.
Based on a kind of chip control circuit based on SR technology described above, the present invention also provides the realizations of the circuit
Method includes the following steps:
(1) different threshold voltage vt h1, Vth2 and Vth3 are set according to circuit design demand, the source electrode of metal-oxide-semiconductor is grounded,
That is: Vs=0V is then connected to the voltage Vd=Vds of comparator OP1 normal phase input end and the access of comparator OP2 inverting input terminal；
(2) Gate ON-OFF control circuit is controlled by comparator OP1, OP2 and outputs control signals to driver, for controlling
The switch of metal-oxide-semiconductor grid；
(3) during transformer secondary afterflow, Vds is gradually increased, when Vds is greater than certain value, comparator OP3 control
Switch S closure is made, metal-oxide-semiconductor grid voltage is reduced, meanwhile, the pull-down current of metal-oxide-semiconductor is controlled by current control circuit, is avoided
Metal-oxide-semiconductor grid voltage is excessively adjusted, and realizes intelligent control.
Specifically, in step (2): as Vds < Vth2, comparator OP1 exports low level, the high electricity of comparator OP2 output
It is flat, then opened by Gate ON-OFF control circuit, driver control metal-oxide-semiconductor.
Specifically, in step (2): as Vds > Vth1, comparator OP1 exports high level, and comparator OP2 exports low electricity
It is flat, then closed by Gate ON-OFF control circuit, driver control metal-oxide-semiconductor.
Specifically, in step (2): as Vth2 < Vds < Vth1, comparator OP1, OP2 export low level, and driver is defeated
It is out high-impedance state.
Compared with prior art, the invention has the following advantages:
(1) present invention makes Vds compared with threshold voltage by comparator OP1, OP2, exports Gate ON-OFF control circuit
Signal is controlled to driver, for controlling the switch of metal-oxide-semiconductor grid；During transformer secondary afterflow, secondary current by
Decrescence small, Vds is smaller and smaller, and when Vds is less than certain value, comparator OP3 control switch S closure reduces metal-oxide-semiconductor grid electricity
Pressure, meanwhile, current control circuit controls the drop-down electricity of metal-oxide-semiconductor by the grid voltage of metal-oxide-semiconductor, Ron and secondary current size
Stream, reduces pull-down current suitably, and regulation is convenient, and occur excessively adjusting when avoiding comparator OP3 control grid voltage asks
Topic, reduces the power consumption of entire circuit, improves the working efficiency of circuit, and comparator has the characteristic of quick response, has
Conducive to raising adjustment speed.
(2) during adjusting grid voltage, after freewheel current zero passage, the voltage value of Vds is greater than the present invention
Vth1, and trigger comparator OP1 can achieve the purpose that prevent metal-oxide-semiconductor electric current reversed.
Detailed description of the invention
Fig. 1 is the circuit diagram of existing ACDC system.
Fig. 2 is circuit diagram used by existing control method.
Fig. 3 is the circuit diagram of chip control circuit in the present invention.
Fig. 4 is the circuit diagram of current control circuit in the present invention.
Fig. 5 is the circuit diagram of current selecting circuit in Fig. 4.
Specific embodiment
The invention will be further described with embodiment for explanation with reference to the accompanying drawing, and mode of the invention includes but not only limits
In following embodiment.
Embodiment
As shown in figure 3, a kind of chip control circuit based on SR technology disclosed by the invention, including transformer, metal-oxide-semiconductor,
It further include comparator OP1, OP2, OP3, the Gate ON-OFF control circuit with signal input part ON, OFF and signal output end is defeated
Enter the driver that end is connected to Gate ON-OFF control circuit signal output end, is connected to the switch S, Yi Jilian of driver output end
The current control circuit in the switch S other end is connect, the inverting input terminal of the comparator OP1 accesses threshold voltage vt h1, described
The normal phase input end of comparator OP2 accesses threshold voltage vt h2, and the inverting input terminal of the comparator OP3 accesses threshold voltage
Vth3, the normal phase input end of described comparator OP1, OP3 and the inverting input terminal of comparator OP2 are connect with the drain electrode of metal-oxide-semiconductor,
The output end of the comparator OP1 is connect with the signal input part OFF of Gate ON-OFF control circuit, and the comparator OP2's is defeated
Outlet is connect with the signal input part ON of Gate ON-OFF control circuit, the tie point and MOS of the driver output end and switch S
The grid of pipe connects.In the present embodiment, described threshold voltage vt h1, Vth2 and Vth3 are provided by independent voltage source, threshold
Threshold voltage value is sequentially reduced, the other end of the voltage source and the source electrode connect and ground of metal-oxide-semiconductor.
As shown in figure 4, the current control circuit includes that one end is connect with metal-oxide-semiconductor grid, the other end is grounded after connecting
Resistance R1 and resistance R2, the first voltage current converter circuit being connected on resistance R1, R2 tie point are connected to metal-oxide-semiconductor drain electrode
Amplifier, the second voltage current converter circuit and input terminal for being connected to amplifier out be connected to first electricity
Current selecting circuit on current voltage conversion circuit, second voltage current converter circuit, the output end of the current selecting circuit
Export pull-down current.
As shown in figure 5, the current selecting circuit includes operational amplifier, grid is connected to operational amplifier output terminal
The source electrode connection of NMOS tube, one end and NMOS tube, the variable resistance of other end ground connection and normal phase input end access input voltage
Multiple comparators, the drain electrode of the non-inverting input terminal of the operational amplifier and metal-oxide-semiconductor connects, the reverse phase of the operational amplifier
Input terminal and the source electrode of NMOS tube connect, and the inverting input terminal of the comparator accesses different threshold voltages, the comparator
Output signal be used to control the adjusting of variable resistance resistance value.
In addition to current selecting circuit set forth above, the present embodiment additionally provides the mode of other two kinds of electric currents selection,
That is: the smaller in two electric currents, two electric currents is selected to be multiplied.In current control circuit, wherein some Voltage to current transducer is electric
Road is discrete digital processing mode, then realizes pull-down current control by current selecting circuit, multiple comparators are for judging grid
The voltage range of pole tension, output digit signals control the electric current of NMOS tube, and the electric current of NMOS tube or its process are amplified again
It is exactly pull-down current output.
Based on a kind of chip control circuit based on SR technology described above, the present invention also provides the realizations of the circuit
Method includes the following steps:
Firstly, different threshold voltage vt h1, Vth2 and Vth3 are set according to circuit design demand, and in the present embodiment, threshold
Threshold voltage value is followed successively by -5mV, -15mV, -35mV, the voltage difference Vds=Vd-Vs of metal-oxide-semiconductor drain electrode and source electrode, due to metal-oxide-semiconductor
Source electrode ground connection, it may be assumed that Vs=0V is then connected to the voltage of comparator OP1 normal phase input end and the access of comparator OP2 inverting input terminal
Vd=Vds；
Secondly, controlling Gate ON-OFF control circuit by comparator OP1, OP2 outputs control signals to driver, for controlling
The switch of metal-oxide-semiconductor grid processed.Specifically, in step (2): as Vds < Vth2, comparator OP1 exports low level, comparator
OP2 exports high level, then is opened by Gate ON-OFF control circuit, driver control metal-oxide-semiconductor；As Vds > Vth1, comparator
OP1 exports high level, and comparator OP2 exports low level, then is closed by Gate ON-OFF control circuit, driver control metal-oxide-semiconductor；
As Vth2 < Vds < Vth1, comparator OP1, OP2 export low level, and driver output is high-impedance state.
During transformer secondary afterflow, secondary current is gradually reduced, and Vds is increasing, in order to avoid Vds mistake
Greatly, Vds voltage and the touching of extraneous noise signal promote comparator OP1 to turn off, when Vds is greater than certain value, comparator OP3 control
Switch S closure, reduces metal-oxide-semiconductor grid voltage, the value of Vds is made to be in rational state, in actual control process, when afterflow electricity
After flowing through zero, drop-down adjustment grid voltage, Vds can be greater than Vth1 in any case, and comparator OP1 can be triggered, can be effective
Prevent the electric current of metal-oxide-semiconductor reversed.But while reducing metal-oxide-semiconductor grid voltage, conducting resistance Ron of the grid voltage to metal-oxide-semiconductor
Influence just become bigger, to easily lead to Ron excessive too much for grid voltage decline, to keep Vds voltage also excessive, can thus draw
The excessive of Vds*I is played, thus increases power consumption, causes overall system efficiency that will decline.
Therefore, occurs the problem of excessively adjustment when controlling grid voltage in order to avoid comparator OP3, the present invention passes through electric current
Control circuit controls the pull-down current of metal-oxide-semiconductor, and pull-down current can be according to the grid voltage of metal-oxide-semiconductor, Ron and secondary current size
Intelligence is adjusted, and if grid voltage is lower, Ron is bigger or secondary current is smaller, current control circuit all can allow pull-down current appropriate
Reduce, reduce the power consumption of entire circuit, metal-oxide-semiconductor grid voltage is avoided excessively to adjust, realizes intelligent control, and compare utensil
There is the characteristic of quick response, is conducive to improve adjustment speed.
Above-described embodiment is only one of the preferred embodiment of the present invention, should not be taken to limit protection model of the invention
It encloses, as long as that in body design thought of the invention and mentally makes has no the change of essential meaning or polishing, is solved
The technical issues of it is still consistent with the present invention, should all be included within protection scope of the present invention.
Claims (8)
1. a kind of chip control circuit based on SR technology, including transformer, metal-oxide-semiconductor, which is characterized in that further include comparator
OP1, OP2, OP3, the Gate ON-OFF control circuit with signal input part ON, OFF and signal output end, input terminal are connected to
The driver of Gate ON-OFF control circuit signal output end, is connected to the switch S of driver output end, and is connected to switch S
The inverting input terminal of the current control circuit of the other end, the comparator OP1 accesses threshold voltage vt h1, the comparator OP2
Normal phase input end access threshold voltage vt h2, the inverting input terminal of the comparator OP3 accesses threshold voltage vt h3, the ratio
The inverting input terminal of normal phase input end and comparator OP2 compared with device OP1, OP3 is connect with the drain electrode of metal-oxide-semiconductor, the comparator
The output end of OP1 is connect with the signal input part OFF of Gate ON-OFF control circuit, the output end and Gate of the comparator OP2
The tie point of the signal input part ON connection of ON-OFF control circuit, the driver output end and switch S and the grid of metal-oxide-semiconductor connect
It connects.
2. a kind of chip control circuit based on SR technology according to claim 1, which is characterized in that the threshold voltage
Vth1, Vth2 and Vth3 are provided by independent voltage source, and Vth1 > Vth3 > Vth2, the other end and metal-oxide-semiconductor of the voltage source
Source electrode connect and ground.
3. a kind of chip control circuit based on SR technology according to claim 2, which is characterized in that the current control
Circuit includes the resistance R1 and resistance R2 that one end is connect with metal-oxide-semiconductor grid, the other end is grounded after connecting, and is connected to resistance R1, R2
First voltage current converter circuit on tie point is connected to the amplifier of metal-oxide-semiconductor drain electrode, is connected to the of amplifier out
Two voltage-current converter circuits and input terminal are connected to first voltage current converter circuit, the conversion of second voltage electric current
The output end of current selecting circuit on circuit, the current selecting circuit exports pull-down current.
4. a kind of chip control circuit based on SR technology according to claim 3, which is characterized in that the electric current selection
Circuit includes operational amplifier, and grid is connected to the NMOS tube of operational amplifier output terminal, the source electrode connection of one end and NMOS tube,
The variable resistance of other end ground connection and multiple comparators of normal phase input end access input voltage, the operational amplifier
The drain electrode of non-inverting input terminal and metal-oxide-semiconductor connects, and the inverting input terminal of the operational amplifier and the source electrode of NMOS tube connect, described
The inverting input terminal of comparator accesses different threshold voltages, and the output signal of the comparator is for controlling variable resistance resistance value
Adjusting.
5. a kind of implementation method of chip control circuit based on SR technology according to any one of claims 1 to 4, special
Sign is, includes the following steps:
(1) different threshold voltage vt h1, Vth2 and Vth3, the source electrode ground connection of metal-oxide-semiconductor are set according to circuit design demand, it may be assumed that
Vs=0V is then connected to the voltage Vd=Vds of comparator OP1 normal phase input end and the access of comparator OP2 inverting input terminal；
(2) Gate ON-OFF control circuit is controlled by comparator OP1, OP2 and outputs control signals to driver, for controlling MOS
The switch of tube grid；
(3) during transformer secondary afterflow, Vds is gradually increased, and when Vds is greater than certain value, comparator OP3 control is opened
S closure is closed, metal-oxide-semiconductor grid voltage is reduced, meanwhile, the pull-down current of metal-oxide-semiconductor is controlled by current control circuit, avoids metal-oxide-semiconductor
Grid voltage is excessively adjusted, and realizes intelligent control.
6. a kind of implementation method of chip control circuit based on SR technology according to claim 5, which is characterized in that In
In step (2): as Vds < Vth2, comparator OP1 exports low level, and comparator OP2 exports high level, then is switched by Gate
Control circuit, driver control metal-oxide-semiconductor are opened.
7. a kind of implementation method of chip control circuit based on SR technology according to claim 5, which is characterized in that In
In step (2): as Vds > Vth1, comparator OP1 exports high level, and comparator OP2 exports low level, then is switched by Gate
Control circuit, driver control metal-oxide-semiconductor are closed.
8. a kind of implementation method of chip control circuit based on SR technology according to claim 5, which is characterized in that In
In step (2): as Vth2 < Vds < Vth1, comparator OP1, OP2 export low level, and driver output is high-impedance state.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910739511.8A CN110429801B (en) | 2019-08-12 | 2019-08-12 | Chip control circuit based on SR technology and implementation method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910739511.8A CN110429801B (en) | 2019-08-12 | 2019-08-12 | Chip control circuit based on SR technology and implementation method |
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| CN110429801B CN110429801B (en) | 2021-04-13 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115224778A (en) * | 2022-08-31 | 2022-10-21 | 成都市易冲半导体有限公司 | Self-adaptive discharging circuit and discharging method for charging adapter |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108847774A (en) * | 2018-06-21 | 2018-11-20 | 成都芯源系统有限公司 | Driving circuit and method for driving synchronous rectifier and switching power supply thereof |
| CN109980946A (en) * | 2019-04-18 | 2019-07-05 | 深圳南云微电子有限公司 | A kind of synchronous commutating control circuit and its control method |
-
2019
- 2019-08-12 CN CN201910739511.8A patent/CN110429801B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108847774A (en) * | 2018-06-21 | 2018-11-20 | 成都芯源系统有限公司 | Driving circuit and method for driving synchronous rectifier and switching power supply thereof |
| CN109980946A (en) * | 2019-04-18 | 2019-07-05 | 深圳南云微电子有限公司 | A kind of synchronous commutating control circuit and its control method |
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| CN115224778A (en) * | 2022-08-31 | 2022-10-21 | 成都市易冲半导体有限公司 | Self-adaptive discharging circuit and discharging method for charging adapter |
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