CN110429185A - Electroluminescent device and preparation method thereof and application - Google Patents
Electroluminescent device and preparation method thereof and application Download PDFInfo
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- CN110429185A CN110429185A CN201810803399.5A CN201810803399A CN110429185A CN 110429185 A CN110429185 A CN 110429185A CN 201810803399 A CN201810803399 A CN 201810803399A CN 110429185 A CN110429185 A CN 110429185A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/18—Carrier blocking layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The present invention relates to a kind of electroluminescent devices and preparation method thereof and application.The electroluminescent device includes substrate, pixel electrode layer, auxiliary electrode layer, pixel defining layer, luminescent layer, organic function layer and transparent cathode.The electroluminescent device is by carrying out carbonization burn-through for the organic function layer between auxiliary electrode layer and transparent cathode, it can such as be switched on and be heated to be carbonized and burn, so that the organic function layer carbonization or generation of semiconductor material reset and form discontinuous film, to could be formed with directly contacting for effect between auxiliary electrode layer and transparent cathode, be conducive to improve between auxiliary electrode layer and transparent cathode and be electrically connected effect, and then is conducive to improve the performance of electroluminescent device.
Description
Technical field
The present invention relates to electroluminescent technology fields, more particularly, to a kind of electroluminescent device and preparation method thereof and answer
With.
Background technique
It is being further strengthened currently as the importance of the display device of visual information transmission medium, in order to be occupied in future
Leading position, display device is just towards lighter, thinner, more low energy consumption, more inexpensive and more preferable picture quality trend development.
The electroluminescent devices such as organic electroluminescent LED (OLED) are since with self-luminous, reaction is fast, visual angle is wide, brightness is high, light
The advantages that thin is the Main way of current display device research.Wherein, top emission type device is due to that can obtain bigger opening
Rate becomes the hot spot of research in recent years.But transmitance of the top emitting device due to needing to increase light, the thickness of top electrode
It is general relatively thin, cause electrode sheet resistance larger, voltage drop is serious, can cause the non-uniform light phenomenon of display.
In order to improve uniformity of luminance, the auxiliary electrode being connected with top transparent electrode is often introduced, auxiliary is passed through
The high conductivity of electrode reduces the voltage drop of top transparent electrode, and then improves the uniformity of light emission luminance.However, electric at present
In the panel RGB patterning process of electroluminescence device, whether FMM or printing technology, the ETL (electron-transport on luminescent layer
Layer) etc. organic function layers tend to prepare using open mask mode, to reduce cost of manufacture.But open mask mode
One layer of organic function layer can be deposited when preparing organic function layer in auxiliary electrode and the connecting hole of top transparent electrode, due to
The organic function layers such as ETL are all semiconductor materials, and electric conductivity is poor, thus can generate voltage drop herein, are unfavorable for display panel
Performance boost.
Summary of the invention
Based on this, it is necessary to provide a kind of effect that is electrically connected that can effectively improve top transparent electrode and auxiliary electrode
Electroluminescent device and preparation method thereof and application.
A kind of electroluminescent device, comprising:
Substrate；
Pixel electrode layer is set to the luminous zone of the substrate in patterning；
Auxiliary electrode layer is set on the substrate, and is located at the non-pixel region of the luminous zone；
Pixel defining layer is set on the substrate, and the pixel defining layer has pixel hole and connecting hole, the pixel electricity
Pole layer is located in pixel hole, and the auxiliary electrode layer is located in the connecting hole；
Luminescent layer is set on the pixel electrode layer in pixel hole；
Organic function layer is integrally covered on the auxiliary electrode layer, the pixel defining layer and the luminescent layer；
And
Transparent cathode is integrally covered on the organic function layer；
In the organic function layer warp in the connecting hole and between the auxiliary electrode layer and the transparent cathode
Cross carbonization burn-through processing.
The organic function layer includes hole blocking layer, electron transfer layer and electronics note in one of the embodiments,
Enter at least one layer in layer.
The organic function layer is electron transfer layer in one of the embodiments,.
The thickness of the organic function layer is no more than 35nm in one of the embodiments,.
The material of the auxiliary electrode layer is Mo/Al/Mo in one of the embodiments,；And/or
The material of the organic function layer is at least one of TPBI, PBD, BCP, Bphen, TAZ and TmPyPB；With/
Or
The material of the transparent cathode is IZO or Mg/Ag alloy.
A kind of production method of electroluminescent device, includes the following steps:
Electroluminescent device prefabrication is provided or makes, the electroluminescent device prefabrication includes substrate, pixel electrode
Layer, auxiliary electrode layer, pixel defining layer, luminescent layer, organic function layer and transparent cathode, it is the pixel electrode layer, described
Auxiliary electrode layer and the pixel defining layer are set to the luminous zone of the substrate, and the auxiliary electrode layer is located at the luminous zone
Non-pixel region, the pixel defining layer have pixel cheat and connecting hole, the pixel electrode layer be located at the pixel cheat in,
The auxiliary electrode layer is located in the connecting hole, the luminescent layer the pixel hole in be set to the pixel electrode layer it
On, the organic function layer is integrally covered on the auxiliary electrode layer, the pixel defining layer and the luminescent layer,
The transparent cathode is integrally covered on the organic function layer, and the non-light-emitting area of the substrate is equipped with and the auxiliary electricity
Pole layer and the conducting wire of transparent cathode electrical connection；
Apply voltage between the auxiliary electrode layer and the transparent cathode by corresponding conducting wire, makes to be located at
It is carbonized burn-through due to organic function layer between the auxiliary electrode layer and the transparent cathode is heated because being powered.
The voltage applied between the auxiliary electrode layer and the transparent cathode in one of the embodiments, exists
Between 10V~30V.
The organic function layer includes hole blocking layer, electron transfer layer and electronics note in one of the embodiments,
Enter at least one layer in layer, and the integral thickness of the organic function layer is no more than 35nm.
The material of the auxiliary electrode layer is Mo/Al/Mo in one of the embodiments,；And/or
The material of the organic function layer is at least one of TPBI, PBD, BCP, Bphen, TAZ and TmPyPB；With/
Or
The material of the transparent cathode is IZO or Mg/Ag alloy.
A kind of display device, including electroluminescent device described in any of the above-described embodiment or including by any of the above-described reality
Apply the electroluminescent device of the production method production of electroluminescent device described in example.
Above-mentioned electroluminescent device is by the way that the organic function layer between auxiliary electrode layer and transparent cathode to be carbonized
It burns, can such as be switched on and be heated to be carbonized and burn, so that shape is reset in the organic function layer carbonization or generation of semiconductor material
At discontinuous film, to could be formed with directly contacting for effect between auxiliary electrode layer and transparent cathode, be conducive to improve
It is electrically connected effect between auxiliary electrode layer and transparent cathode, and then is conducive to improve the performance of electroluminescent device.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the electroluminescent device of one embodiment of the invention；
Fig. 2 is that alive schematic diagram is applied between transparent cathode and auxiliary electrode layer；
Fig. 3 is the I-V line chart that auxiliary electrode layer is directly contacted with transparent cathode and auxiliary electrode layer and transparent cathode
The I-V line chart of the ETL of one layer of 25nm thickness is inserted between layer；
Fig. 4 is auxiliary electrode layer/transparent after the high pressure for applying a 15V between auxiliary electrode layer and transparent cathode
I-V line chart and auxiliary electrode layer/ETL/ transparent cathode I-V line chart of cathode layer.
Specific embodiment
To facilitate the understanding of the present invention, a more comprehensive description of the invention is given in the following sections with reference to the relevant attached drawings.In attached drawing
Give presently preferred embodiments of the present invention.But the invention can be realized in many different forms, however it is not limited to this paper institute
The embodiment of description.On the contrary, purpose of providing these embodiments is keeps the understanding to the disclosure more thorough
Comprehensively.
It should be noted that be referred to as " being set to " another element when element, it can directly on the other element or
There may also be elements placed in the middle by person.When an element is considered as " connection " another element, it can be directly to
Another element may be simultaneously present centering elements.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein "and/or" includes one or more phases
Any and all combinations of the listed item of pass.
It please join Fig. 1, one embodiment of the invention provides a kind of electroluminescent device 100 comprising substrate 110, pixel electricity
Pole layer 120, auxiliary electrode layer 130, pixel defining layer 140, luminescent layer 150, organic function layer 160 and transparent cathode 170.
Substrate 110 has luminous zone and non-light-emitting area, and wherein luminous zone is used to form various functions layers, and non-light-emitting area is i.e. outer
Circuit region is enclosed, all kinds of cablings for extraction, such as FPC connection line are used to form.
Pixel electrode layer 120 is located on 110 luminous zone of substrate.Pixel electrode layer 120 has in patterned distribution in substrate
On pixel electrode.
Auxiliary electrode layer 130 is set on substrate 110.The non-pixel region that auxiliary electrode layer 130 is located at luminous zone (does not have
The white space of pixel electrode).The material of auxiliary electrode layer 130 can be but not limited to such as Mo/Al/Mo.
Pixel defining layer 140 is set on substrate 110.Pixel defining layer 140 has pixel hole 142 and connecting hole 144.Pixel
Hole 142 surrounds each pixel electrode, and connecting hole 144 surrounds each auxiliary electrode of auxiliary electrode layer 130.In a specific example
In, pixel defining layer 140 is formed in after pixel electrode layer 120 i.e. auxiliary electrode layer 130, thus, pixel defining layer 140 has
Part is located on the edge of the pixel electrode of pixel electrode layer 120 and the auxiliary electrode of auxiliary electrode layer 130.
Luminescent layer 150 is set on the pixel electrode layer 120 in 142 in pixel hole.Luminescent layer 150 can be but not limited to
Organic light emitting material or quantum dot light emitting material layer, in the present embodiment, preferably organic light emitting material.
The organic function layer 160 of the present embodiment is prepared using open mask technique, be integrally covered on auxiliary electrode layer 130,
On pixel defining layer 140 and luminescent layer 150.Organic function layer 160 includes hole blocking layer, electron transfer layer and electronics
At least one layer in implanted layer, integral thickness are no more than 35nm.In a specific example, organic function layer 160 are electricity
Sub- transport layer, material can be but not limited at least one of TPBI, PBD, BCP, Bphen, TAZ and TmPyPB.
Transparent cathode 170 is also prepared using open mask technique, is integrally covered on organic function layer 160.It is transparent
The material of cathode layer 170 can be but not limited to IZO or Mg/Ag alloy etc..
In the present embodiment, in having in connecting hole 144 and between auxiliary electrode layer 130 and transparent cathode 170
Machine functional layer 160 is by carbonization burn-through processing.The carbonization burn-through processing, which refers to, carries out high-temperature process for organic function layer 160,
Since organic function layer 160 is semiconducting organic materials, when high-temperature process, can be carbonized burn-through.Preferably, specific at one
In example, as shown in Fig. 2, carbonization burn-through processing is that energization processing is carried out to it, the organic function layer 160 of semiconductor material
Electric conductivity is poor, and resistance is larger, and high current can to generate biggish thermal energy in organic function layer 160, so that organic function
Carbonization occurs for ergosphere 160 or resets to form discontinuous film, connects auxiliary electrode layer 130 directly with transparent cathode 170
Touching, forms effective electrical connection.
The present invention also provides a kind of production methods of electroluminescent device comprising following steps:
Step S1: providing or production electroluminescent device prefabrication, and electroluminescent device prefabrication includes substrate, pixel electricity
Pole layer, auxiliary electrode layer, pixel defining layer, luminescent layer, organic function layer and transparent cathode, pixel electrode layer, auxiliary electricity
Pole layer and pixel defining layer are set to the luminous zone of substrate, and auxiliary electrode layer is located at the non-pixel region of luminous zone, and pixel defines
Layer has pixel hole and connecting hole, and pixel electrode layer is located in pixel hole, and auxiliary electrode layer is located in connecting hole, and luminescent layer is in picture
Element is set on pixel electrode layer in hole, and organic function layer is integrally covered on auxiliary electrode layer, pixel defining layer and luminescent layer
On, transparent cathode is integrally covered on organic function layer, and the non-light-emitting area of substrate is equipped with and auxiliary electrode layer and transparent
The conducting wire of cathode layer electrical connection.
In a specific example, which can make to obtain as follows:
Step S11: the predeterminated position in the non-light-emitting area of substrate makes for electric with auxiliary electrode layer and transparent cathode
The conducting wire of connection.
Conducting wire includes cabling and conductive welding disk (pad) etc., in order to subsequent and auxiliary electrode layer and transparent cathode
Electrical connection applies voltage.
Step S12: the luminous zone of substrate predeterminated position production pixel electrode layer, auxiliary electrode layer, pixel defining layer,
Luminescent layer, organic function layer and transparent cathode, organic function layer be integrally covered on auxiliary electrode layer, pixel defining layer and
On luminescent layer, transparent cathode is integrally covered on organic function layer, by auxiliary electrode layer and transparent cathode and accordingly
Conducting wire electrical connection.
Pixel electrode layer is set on substrate in patterning.Auxiliary electrode layer is set on substrate, and is located at pixel electrode layer
Non-pixel region.Pixel defining layer is set on substrate.Pixel defining layer forms pixel around each pixel electrode of pixel electrode layer
Hole, and connecting hole is formed around each auxiliary electrode of auxiliary electrode layer.Luminescent layer is set on pixel electrode layer in pixel hole.
Pixel electrode layer, auxiliary electrode layer, pixel defining layer, the system of luminescent layer, organic function layer and transparent cathode
It is standby to make molding in such a way that vapor deposition processing procedure or printing technology are combined with vapor deposition processing procedure.
Step S13: being packaged processing to the thick finished product of the device of production, expose the corresponding conducting wire of non-light-emitting area,
Up to the electroluminescent device prefabrication.
Step S2: applying voltage by corresponding conducting wire between auxiliary electrode layer and transparent cathode, makes to be located at
It is carbonized burn-through due to organic function layer between auxiliary electrode layer and transparent cathode is heated because being powered.
As shown in Fig. 2, electric current can pass through auxiliary electrode layer after applying voltage between auxiliary electrode layer and transparent cathode
Organic function layer between transparent cathode, therefore the organic function layer of semiconductor material can generate heat is carbonized and burns.
In a specific example, the voltage that applies between auxiliary electrode layer and transparent cathode 10V~30V it
Between, preferably between 15V~20V.The time of energization is unlimited, can be to organic function between auxiliary electrode layer and transparent cathode
Until ergosphere carbonization is burnt, such as can be to judge organic function layer by the stability of measurement electric current and voltage relationship figure
No carbonization is burnt.
Further, which further includes removing extra conducting wire, carries out subsequent processing etc. to the thick finished product of device
Step.For example above-mentioned conducting wire for being electrically connected with auxiliary electrode layer and transparent cathode of extra conducting wire, for another example its
He tests cabling etc..Subsequent processing, which such as can be, carries out COF and IC bonding to the thick finished product of device.
Fig. 3 is the I-V line chart that auxiliary electrode layer is directly contacted with transparent cathode and auxiliary electrode layer and transparent cathode
The I-V line chart of the ETL of one layer of 25nm thickness is inserted between layer.From figure 3, it can be seen that the introducing of ETL is substantially dropped under identical voltage
Low electric current between transparent cathode and auxiliary electrode layer.
Fig. 4 is auxiliary electrode layer/transparent after the high pressure for applying a 15V between auxiliary electrode layer and transparent cathode
I-V line chart and auxiliary electrode layer/ETL/ transparent cathode I-V line chart of cathode layer.From fig. 4, it can be seen that applying 15V high
After pressure, auxiliary electrode layer/ETL/ transparent cathode I-V with, auxiliary electrode layer/transparent cathode I-V is almost consistent, thus
Demonstrate the validity of the above method.
Above-mentioned electroluminescent device is by the way that the organic function layer between auxiliary electrode layer and transparent cathode to be carbonized
It burns, can such as be switched on and be heated to be carbonized and burn, so that shape is reset in the organic function layer carbonization or generation of semiconductor material
At discontinuous film, to could be formed with directly contacting for effect between auxiliary electrode layer and transparent cathode, be conducive to improve
It is electrically connected effect between auxiliary electrode layer and transparent cathode, and then is conducive to improve the performance of electroluminescent device.The electricity
Electroluminescence device can be used for illuminating or for making display device, such as a kind of display device comprising any of the above-described embodiment
Electroluminescent device or further include by the electroluminescent device of any of the above-described embodiment production method make electroluminescent hair
Optical device.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of electroluminescent device characterized by comprising
Substrate；
Pixel electrode layer is set to the luminous zone of the substrate in patterning；
Auxiliary electrode layer is set on the substrate, and is located at the non-pixel region of the luminous zone；
Pixel defining layer is set on the substrate, and the pixel defining layer has pixel hole and connecting hole, the pixel electrode layer
In pixel hole, the auxiliary electrode layer is located in the connecting hole；
Luminescent layer is set on the pixel electrode layer in pixel hole；
Organic function layer is integrally covered on the auxiliary electrode layer, the pixel defining layer and the luminescent layer；And
Transparent cathode is integrally covered on the organic function layer；
Pass through carbon in the organic function layer in the connecting hole and between the auxiliary electrode layer and the transparent cathode
Change burn-through processing.
2. electroluminescent device as described in claim 1, which is characterized in that the organic function layer include hole blocking layer,
At least one layer in electron transfer layer and electron injecting layer.
3. electroluminescent device as described in claim 1, which is characterized in that the organic function layer is electron transfer layer.
4. electroluminescent device according to any one of claims 1 to 3, which is characterized in that the thickness of the organic function layer
Degree is no more than 35nm.
5. electroluminescent device according to any one of claims 1 to 3, which is characterized in that the material of the auxiliary electrode layer
Material is Mo/Al/Mo；And/or
The material of the organic function layer is at least one of TPBI, PBD, BCP, Bphen, TAZ and TmPyPB；And/or
The material of the transparent cathode is IZO or Mg/Ag alloy.
6. a kind of production method of electroluminescent device, which comprises the steps of:
It provides or production electroluminescent device prefabrication, the electroluminescent device prefabrication includes substrate, pixel electrode layer, auxiliary
Help electrode layer, pixel defining layer, luminescent layer, organic function layer and transparent cathode, the pixel electrode layer, auxiliary electricity
Pole layer and the pixel defining layer are set to the luminous zone of the substrate, and the auxiliary electrode layer is located at the non-picture of the luminous zone
Plain region, the pixel defining layer have pixel hole and connecting hole, and the pixel electrode layer is located in pixel hole, described auxiliary
Electrode layer is helped to be located in the connecting hole, the luminescent layer is set on the pixel electrode layer in pixel hole, described
Organic function layer is integrally covered on the auxiliary electrode layer, the pixel defining layer and the luminescent layer, described transparent
Cathode layer is integrally covered on the organic function layer, and the non-light-emitting area of the substrate is equipped with and the auxiliary electrode layer and institute
State the conducting wire of transparent cathode electrical connection；
Apply voltage between the auxiliary electrode layer and the transparent cathode by corresponding conducting wire, makes to be located at described
It is carbonized burn-through due to organic function layer between auxiliary electrode layer and the transparent cathode is heated because being powered.
7. the production method of electroluminescent device as claimed in claim 6, which is characterized in that in the auxiliary electrode layer and institute
The voltage applied between transparent cathode is stated between 10V~30V.
8. the production method of electroluminescent device as claimed in claim 6, which is characterized in that the organic function layer includes sky
At least one layer in cave barrier layer, electron transfer layer and electron injecting layer, and the integral thickness of the organic function layer does not surpass
Cross 35nm.
9. the production method of the electroluminescent device as described in any one of claim 6~8, which is characterized in that the auxiliary
The material of electrode layer is Mo/Al/Mo；And/or
The material of the organic function layer is at least one of TPBI, PBD, BCP, Bphen, TAZ and TmPyPB；And/or
The material of the transparent cathode is IZO or Mg/Ag alloy.
10. a kind of display device, which is characterized in that including electroluminescent device such as according to any one of claims 1 to 5 or
Person includes the electroluminescent device of the production method production of the electroluminescent device as described in any one of claim 6~9.
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| CN201810803399.5A CN110429185B (en) | 2018-07-20 | 2018-07-20 | Electroluminescent device and manufacturing method and application thereof |
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| WO2021120273A1 (en) * | 2019-12-19 | 2021-06-24 | 深圳市华星光电半导体显示技术有限公司 | Organic light-emitting diode display device |
| CN114300631A (en) * | 2021-12-29 | 2022-04-08 | 北京维信诺科技有限公司 | Display substrate, display panel and manufacturing method of display substrate |
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