CN105355648B - Organic Light Emitting Diode illumination panel and its preparation method and application - Google Patents
Organic Light Emitting Diode illumination panel and its preparation method and application Download PDFInfo
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- CN105355648B CN105355648B CN201510908661.9A CN201510908661A CN105355648B CN 105355648 B CN105355648 B CN 105355648B CN 201510908661 A CN201510908661 A CN 201510908661A CN 105355648 B CN105355648 B CN 105355648B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/18—Tiled displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The present invention relates to a kind of Organic Light Emitting Diode illumination panels and its preparation method and application.The preparation method of Organic Light Emitting Diode illumination panel includes the following steps：First electrode layer is formed on substrate；Auxiliary electrode material layer is formed in first electrode layer；Insulation material layer is coated on auxiliary electrode material layer；The first pattern is opened up in insulation material layer, obtains insulating layer；The second pattern is etched on auxiliary electrode material layer and forms auxiliary electrode layer.The preparation method of above-mentioned Organic Light Emitting Diode illumination panel, first electrode layer is formed on substrate first, later during auxiliary electrode layer is formed, removal is not coated on the insulation material layer on auxiliary electrode material layer, but insulation material layer is used as insulating layer, therefore, the preparation method of the Organic Light Emitting Diode illumination panel of the application reduces the additional technique for preparing insulating layer, therefore, production cost is advantageously reduced.
Description
Technical field
The present invention relates to organic luminescent device field, more particularly to a kind of Organic Light Emitting Diode illumination panel and its system
Preparation Method and application.
Background technology
Organic Light Emitting Diode (Organic Light Emission Diode, abbreviation OLED) is a kind of to utilize to send out
The Organic Light Emitting Diode of light shows the spontaneous emission display of image, has that brightness is high, material selection range is wide, driving voltage
Low, all solidstate actively characteristics such as luminous, while possess the advantages such as high-resolution, wide viewing angle and fast response time, when meeting information
The requirement of the development trend and green lighting technique of third-generation mobile communication and presentation of information is current lot of domestic and foreign researcher
Focal point.
Traditional OLED anodes are generally prepared using materials such as transparent conductive material such as ITO, the electricity of transparent conductive material
Resistance is higher, with the increase of display panel area, voltage drop can be generated when electric current flows through transparent conductive material, causes illumination panel
Interior brightness irregularities.The phenomenon that in order to improve brightness irregularities, it is common practice to the fine and closely woven arrangement gold on entire ito anode
Belong to grid and do auxiliary electrode.
However, the preparation method of traditional OLED illumination panels with auxiliary electrode is first deposits on the glass substrate
ITO and auxiliary electrode, then photoetching sequentially form ITO pattern, auxiliary electrode figure and layer pattern, are needed altogether using three times
The lithographic process of the method for photoetching, i.e. ITO, arrangement auxiliary electrode need a photoetching process and insulating layer to need primary light
(range for limiting luminous zone) is carved, causes cost higher.
Invention content
Based on this, it is necessary to for traditional OLED illumination panels preparation method cost it is higher the problem of, one kind is provided
Reduce the preparation method of the OLED illumination panels of cost.
A kind of preparation method of Organic Light Emitting Diode illumination panel, includes the following steps：
First electrode layer is formed on substrate；
Auxiliary electrode material layer is formed in the first electrode layer；
Insulation material layer is coated on the auxiliary electrode material layer；
The first pattern is opened up in the insulation material layer, obtains insulating layer；
The second pattern is etched on the auxiliary electrode material layer and forms auxiliary electrode layer.
Compared with the preparation method of traditional Organic Light Emitting Diode illumination panel, above-mentioned Organic Light Emitting Diode illuminated area
The preparation method of plate forms first electrode layer on substrate first, later during auxiliary electrode layer is formed, does not remove
The insulation material layer being coated on auxiliary electrode material layer, but insulation material layer is used as insulating layer, therefore, the application's has
The preparation method of machine LED lighting panel reduces the additional technique for preparing insulating layer, therefore, advantageously reduces production
Cost.
The operation for opening up the first pattern in the insulation material layer in one of the embodiments, is：The first figure will be carried
The mask plate of case is covered in the surface of the insulation material layer, and the insulation material layer is exposed, developed and dried successively
Operation.
The material of the insulating layer is photoresist in one of the embodiments,.
A kind of Organic Light Emitting Diode illumination panel, including：
Substrate；
First electrode layer, setting is on the substrate；
Auxiliary electrode layer is arranged in the first electrode layer, and is electrically connected with the first electrode layer；
Insulating layer is arranged on surface of the auxiliary electrode layer far from the first electrode layer, and the insulating layer is separate
The projection of the opposite face of the side of the auxiliary electrode layer and the insulating layer and the auxiliary electrode layer on the substrate
Cover the projection of the opposite face of the auxiliary electrode layer and the insulating layer on the substrate.
The material of the insulating layer is photoresist in one of the embodiments,.
The material of the first electrode layer is tin indium oxide in one of the embodiments, Zinc-tin alloy, indium gallium zinc close
Gold, indium Zinc-tin alloy, nano silver, PEDOT, carbon nanotube or graphene.
The material of the auxiliary electrode layer is gold, silver, chromium, molybdenum, aluminium or copper in one of the embodiments,.
The throwing of the opposite face of the insulating layer and the auxiliary electrode layer on the substrate in one of the embodiments,
Projected area of the shadow area more than the opposite face of the auxiliary electrode layer and the insulating layer on the substrate.
A kind of Organic Light Emitting Diode illuminating device including above-mentioned Organic Light Emitting Diode illumination panel, is set gradually
Organic luminous layer and the second electrode lay on the Organic Light Emitting Diode illumination panel, the organic luminous layer will be described auxiliary
Electrode layer is helped to separate with the second electrode lay.
The thickness of the organic luminous layer is not less than the thickness of the auxiliary electrode layer in one of the embodiments,.
Description of the drawings
Fig. 1 is the preparation method flow chart of Organic Light Emitting Diode illumination panel of the present invention；
Fig. 2 is the schematic diagram for the first electrode layer that the present invention prepares Organic Light Emitting Diode illumination panel；
Fig. 3 is the schematic diagram of Organic Light Emitting Diode illumination panel of the present invention；
Fig. 4 is the schematic diagram of Organic Light Emitting Diode illuminating device of the present invention.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.Many details are elaborated in the following description in order to fully understand this hair
It is bright.But the invention can be embodied in many other ways as described herein, those skilled in the art can be not
Similar improvement is done in the case of violating intension of the present invention, therefore the present invention is not limited by following public specific embodiment.
It should be noted that when element is referred to as " being fixed on " another element, it can be directly on another element
Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it can be directly connected to
To another element or it may be simultaneously present centering elements.
Unless otherwise defined, all of technologies and scientific terms used here by the article is with belonging to technical field of the invention
The normally understood meaning of technical staff is identical.Term used in the description of the invention herein is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein " and/or " including one or more phases
The arbitrary and all combination of the Listed Items of pass.
As shown in Figure 1, the preparation method of the Organic Light Emitting Diode illumination panel of an embodiment, packet following steps：
S10, first electrode layer 212 is formed on substrate 211.
First electrode layer 212 is formed on substrate 211, first electrode material layer need to be prepared on substrate 211 first, it can be with
The methods of using chemical vapor deposition (Chemical Vapor Deposition, CVD), sputtering or vapor deposition.It is being prepared
After one electrode material layer, it is also exposed development, etching, stripping successively to first electrode material layer, forms predetermined pattern
The step of.Final first electrode layer 212 is formed, as shown in Figure 2.
In the present embodiment, the material of first electrode layer 212 is tin indium oxide (ITO, Indium Tin Oxides), zinc
Tin alloy, indium gallium kirsite, indium Zinc-tin alloy, nano silver, PEDOT, carbon nanotube or graphene.Due to illumination panel substrate
211 luminous characteristics, it is desirable that first electrode layer 212 must be the material of high transparency, therefore, selection more than high transparency and conduction
Material can improve luminous efficiency as first electrode layer.Wherein, substrate 211 is either glass substrate or high score
Any one material in polyesters compound or polyamide-based compound may be used in sub- flexible base board, flexible base board.
S20, auxiliary electrode material layer is formed in first electrode layer 212.
The methods of chemical vapor deposition, sputtering or vapor deposition may be used forms auxiliary electrode material in first electrode layer 212
The bed of material.Auxiliary electrode material layer is a complete material layer at this time, and does not offer pattern.
S30, it is coated with insulation material layer on auxiliary electrode material layer.
In a preferred embodiment, the material of insulating layer 214 is photoresist, i.e., the material of insulation material layer is photoetching
Glue.The modes such as rotary coating or slot coated may be used in coating, can ensure that the thickness of the insulating layer finally obtained 214 is equal
It is even, it prevents the rough surface of insulating layer 214 uneven and influences follow-up use.
S40, the first pattern is opened up in insulation material layer, obtains insulating layer 214.
When the material of insulating layer 214 is selected from photoresist, the mask plate with the first pattern can be covered in insulation material
The surface of the bed of material is exposed insulation material layer, develops and drying operation, that is, opens up the first pattern, obtain insulating layer successively
214。
S50, the second pattern formation auxiliary electrode layer 213 is etched on auxiliary electrode material layer.
The material of auxiliary electrode layer 213 is gold, silver, chromium, molybdenum, aluminium or copper.The resistivity of these metals is relatively low, can be effective
Reduction leads to the voltage drop that electric current generates when flowing through transparent conductive material with the increase of display panel area, improves illuminated area
In plate the phenomenon that brightness irregularities.
The second pattern is etched on auxiliary electrode material layer to be formed in the operation of auxiliary electrode layer 213, can pass through control
Kinds of processes condition maintains stable etch rate, achievees the purpose that over etching, insulating layer 214 is made to be covered in auxiliary electrode layer
213 surfaces far from first electrode layer 212, and side of the insulating layer 214 far from auxiliary electrode layer 213 and insulating layer 214 with
Projection covering auxiliary electrode layer 213 and the opposite face of insulating layer 214 of the opposite face of auxiliary electrode layer 213 on substrate 211 exist
Projection on substrate 211.Wherein, dry etching or wet etching may be used in the mode of etching.It is covered with traditional insulating layer
In auxiliary electrode layer compared with its excess-three face this set in addition to substrate opposite face, the insulating layer of the present embodiment 214
It is covered in the upper surface of auxiliary electrode layer 213, and with the side of auxiliary electrode layer 213 and not in contact with therefore reducing insulating layer
Contact area between 214 and first electrode layer 212, so as to reduce influence of the insulating layer 214 to translucency, increase opening
Rate.
In the present embodiment, etched on auxiliary electrode material layer the second pattern formed auxiliary electrode layer 213 after, no longer into
The operation of insulating layer 214 after row stripping etching.Therefore, the insulating layer 214 of the present embodiment does not need to additionally carry out photoetching again,
Advantageously reduce production cost.
Compared with the preparation method of traditional Organic Light Emitting Diode illumination panel, above-mentioned Organic Light Emitting Diode illuminated area
The preparation method of plate forms first electrode layer on substrate first, later during auxiliary electrode layer is formed, does not remove
The insulation material layer being coated on auxiliary electrode material layer, but insulation material layer is used as insulating layer, therefore, the application's has
The preparation method of machine LED lighting panel reduces the additional technique for preparing insulating layer, therefore, advantageously reduces production
Cost.
The Organic Light Emitting Diode illumination panel 210 of one embodiment, as shown in figure 3, including substrate 211, being arranged on base
First electrode layer 212, auxiliary electrode layer 213 and insulating layer 214 on plate 211.
Wherein, substrate 211 is either glass substrate or macromolecule flexible base board, flexible base board may be used
Any one material in polyesters compound or polyamide-based compound.In the present embodiment, the material of first electrode layer 212
Matter is tin indium oxide (ITO, Indium Tin Oxides), zinc, Zinc-tin alloy, indium gallium kirsite or indium Zinc-tin alloy.
Auxiliary electrode layer 213 is arranged in first electrode layer 212, and is electrically connected with first electrode layer 212.Auxiliary electrode layer
213 material is gold, silver, chromium, molybdenum, aluminium or copper.
Insulating layer 214 is arranged on surface of the auxiliary electrode layer 213 far from first electrode layer 212, and insulating layer 214 is far from auxiliary
Help electrode layer 213 side and insulating layer 214 and auxiliary electrode layer 213 projection covering of the opposite face on substrate 211 it is auxiliary
Help projection of the opposite face of electrode layer 213 and insulating layer 214 on substrate 211.Specifically, the insulating layer 214 of present embodiment
It is more than the phase of auxiliary electrode layer 213 and insulating layer 214 with the projected area of the opposite face of auxiliary electrode layer 213 on substrate 211
Projected area of the opposite on substrate 211.But not limited to this.In addition, the material of insulating layer 214 can be photoresist.
Its excess-three face this set in addition to substrate opposite face of auxiliary electrode layer is covered in traditional insulating layer
Compare, the insulating layer 214 of the present embodiment is only covered in the upper surface of auxiliary electrode layer 213, and with the side of auxiliary electrode layer 213
And not in contact with, therefore reduce the contact area between insulating layer 214 and first electrode layer 212, so as to reduce insulating layer 214
Influence to translucency increases aperture opening ratio.
The Organic Light Emitting Diode illuminating device 200 of one embodiment, as shown in figure 4, including above-mentioned organic light emission two
Pole pipe illumination panel 210,220 and second electricity of organic luminous layer being successively set on Organic Light Emitting Diode illumination panel 210
Pole layer 230.
Organic Light Emitting Diode illumination panel 210 include substrate 211, be arranged on substrate 211 first electrode layer 212,
Auxiliary electrode layer 213 and insulating layer 214.
The mode that vapor deposition may be used forms organic luminous layer 220 in first electrode layer 212.First electrode layer 212 has
Machine luminescent layer 220 and the second electrode lay 230 can form light-emitting component.In the present embodiment, first electrode layer 212 is as hair
The anode of optical element, cathode of the second electrode lay 230 as light-emitting component.Organic luminous layer 220 can include luminescent layer, may be used also
Organic Light Emitting Diode illumination is improved to include hole injection layer, hole transmission layer, electron transfer layer, electron injecting layer etc.
The luminous efficiency of panel 210.
Auxiliary electrode layer 213 is separated by organic luminous layer 220 and the second electrode lay 230, is avoided and the second electrode lay 230
It is electrically connected and causes the short circuit of Organic Light Emitting Diode illuminating device 200.
Insulating layer 214 is between auxiliary electrode layer 213 and the second electrode lay 230, due to the left and right of auxiliary electrode layer 213
Both sides are not provided with insulating layer, therefore auxiliary electrode layer 213 is electrically connected with the second electrode lay 230 and causes organic hair in order to prevent
The short circuit of optical diode illuminating device 200 influences to use, and the thickness of organic luminous layer 220 is set as not less than auxiliary electrode layer
213 thickness, such organic luminous layer 220 can fully play separate auxiliary electrode layer 213 and the second electrode lay 230
Effect.
In the Organic Light Emitting Diode illuminating device 200 of present embodiment, organic luminous layer 220 is located at two neighboring auxiliary
Between electrode, in use, the side light that organic luminous layer 220 is sent out can be stopped by auxiliary electrode layer 213, this part
Light then passes through the second electrode lay 230 and reflects and projected from the surface of substrate 211, so as to reduce the light loss of side, carries
Bloom takes out effect.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Embodiment described above only expresses the several embodiments of the present invention, and description is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that those of ordinary skill in the art are come
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (9)
1. a kind of preparation method of Organic Light Emitting Diode illumination panel, which is characterized in that include the following steps：
First electrode layer is formed on substrate；
Auxiliary electrode material layer is formed in the first electrode layer；
Insulation material layer is coated on the auxiliary electrode material layer；
The first pattern is opened up in the insulation material layer, obtains insulating layer；
The second pattern is etched on the auxiliary electrode material layer and forms auxiliary electrode layer；
Wherein, the projected area of the opposite face of the insulating layer and the auxiliary electrode layer on the substrate is more than the auxiliary
The projected area of the opposite face of electrode layer and the insulating layer on the substrate.
2. the preparation method of Organic Light Emitting Diode illumination panel according to claim 1, which is characterized in that described exhausted
The operation that edge material layer opens up the first pattern is：Mask plate with the first pattern is covered in the table of the insulation material layer
Face is exposed the insulation material layer, develops and drying operation successively.
3. the preparation method of Organic Light Emitting Diode illumination panel according to claim 1, which is characterized in that the insulation
The material of layer is photoresist.
4. a kind of Organic Light Emitting Diode illumination panel, which is characterized in that including：
Substrate；
First electrode layer, setting is on the substrate；
Auxiliary electrode layer is arranged in the first electrode layer, and is electrically connected with the first electrode layer；
Insulating layer is arranged on surface of the auxiliary electrode layer far from the first electrode layer, and the insulating layer is far from described
The projection of the opposite face of the side of auxiliary electrode layer and the insulating layer and the auxiliary electrode layer on the substrate covers
The projection of the opposite face of the auxiliary electrode layer and the insulating layer on the substrate；
The projected area of the opposite face of the insulating layer and the auxiliary electrode layer on the substrate is more than the auxiliary electrode
Projected area of the layer with the opposite face of the insulating layer on the substrate.
5. Organic Light Emitting Diode illumination panel according to claim 4, which is characterized in that the material of the insulating layer is
Photoresist.
6. Organic Light Emitting Diode illumination panel according to claim 4, which is characterized in that the material of the first electrode layer
Matter is tin indium oxide, Zinc-tin alloy, indium gallium kirsite, indium Zinc-tin alloy, nano silver, PEDOT, carbon nanotube or graphene.
7. Organic Light Emitting Diode illumination panel according to claim 4, which is characterized in that the material of the auxiliary electrode layer
Matter is gold, silver, chromium, molybdenum, aluminium or copper.
8. a kind of Organic Light Emitting Diode illuminating device, which is characterized in that including as described in any one of claim 4~7
Organic Light Emitting Diode illumination panel, the organic luminous layer being successively set on the Organic Light Emitting Diode illumination panel and
Two electrode layers, the organic luminous layer separate the auxiliary electrode layer and the second electrode lay.
9. Organic Light Emitting Diode illuminating device according to claim 8, which is characterized in that the thickness of the organic luminous layer
Degree is not less than the thickness of the auxiliary electrode layer.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101728418A (en) * | 2008-10-29 | 2010-06-09 | 三星移动显示器株式会社 | Organic light emitting display device |
| CN103024960A (en) * | 2012-11-30 | 2013-04-03 | 昆山维信诺显示技术有限公司 | Organic light emitting diode (OLED) lighting panel, preparation method and OLED lighting device |
| CN104241537A (en) * | 2013-06-11 | 2014-12-24 | 三星显示有限公司 | Organic light emitting device including an auxiliary electrode |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7579771B2 (en) * | 2002-04-23 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101728418A (en) * | 2008-10-29 | 2010-06-09 | 三星移动显示器株式会社 | Organic light emitting display device |
| CN103024960A (en) * | 2012-11-30 | 2013-04-03 | 昆山维信诺显示技术有限公司 | Organic light emitting diode (OLED) lighting panel, preparation method and OLED lighting device |
| CN104241537A (en) * | 2013-06-11 | 2014-12-24 | 三星显示有限公司 | Organic light emitting device including an auxiliary electrode |
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