CN110429032B - Based on Ni3(HITP)2Preparation method of field effect transistor of conductive MOF film - Google Patents

Based on Ni3(HITP)2Preparation method of field effect transistor of conductive MOF film Download PDF

Info

Publication number
CN110429032B
CN110429032B CN201910700639.3A CN201910700639A CN110429032B CN 110429032 B CN110429032 B CN 110429032B CN 201910700639 A CN201910700639 A CN 201910700639A CN 110429032 B CN110429032 B CN 110429032B
Authority
CN
China
Prior art keywords
hitp
channel
film
field effect
transistor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910700639.3A
Other languages
Chinese (zh)
Other versions
CN110429032A (en
Inventor
段国韬
王冰芳
刘波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huazhong University of Science and Technology
Original Assignee
Huazhong University of Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huazhong University of Science and Technology filed Critical Huazhong University of Science and Technology
Priority to CN201910700639.3A priority Critical patent/CN110429032B/en
Publication of CN110429032A publication Critical patent/CN110429032A/en
Application granted granted Critical
Publication of CN110429032B publication Critical patent/CN110429032B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The invention belongs to the field of field effect transistors, and particularly relates to a Ni-based semiconductor3(HITP)2A method for making a field effect transistor of a conductive MOF film. Placing a transistor device containing a source, a drain, a grid and a channel in Ni3(HITP)2In the reaction solution, Ni is obtained by in-situ growth at the channel of the transistor device by a solid-liquid interface method3(HITP)2Film to obtain Ni-based film3(HITP)2A field effect transistor of a conductive MOF film. Thereby solving the prior art Ni-based3(HITP)2The preparation method of the field effect transistor of the conductive MOF film has the technical problems of poor current carrier transmission performance and sensitivity performance of the field effect transistor caused by insecure combination with a substrate, poor contact, poor uniformity and the like.

Description

Based on Ni3(HITP)2Preparation method of field effect transistor of conductive MOF film
Technical Field
The invention belongs to the field of field effect transistors, and particularly relates to a Ni-based semiconductor3(HITP)2A method for making a field effect transistor of a conductive MOF film.
Background
Novel two-dimensional MOF material Ni3(HITP)2Has the property similar to that of graphene, but has the advantages of band gap characteristic and the like compared with the graphene, and has the advantages of mild reaction condition, simple synthesis and higher surface area of 630m2G, high conductivity (its conductivity sigma is 5000S/m, and exceeds activated carbon and porous graphite), rich Ni-N4An active site. Ni having these unique properties3(HITP)2Can be used as an excellent choice of active channel material of the field effect transistor.
Preparation based on Ni3(HITP)2A key issue in field effect transistors with conductive MOF films is how to transfer the MOF film to the channel of the FET, common methods are drop coating, spin coating, stamp transfer, etc., such as Ni3(HITP)2The powder is prepared into dispersion liquid to be dripped or spin-coated on the surface of a silicon wafer, or Ni is directly transferred by a substrate3(HITP)2However, these methods have disadvantages of weak bonding with the substrate, poor contact, poor uniformity, etc., and thus may affect the carrier transport property and sensitivity of the field effect transistor.
Disclosure of Invention
In response to the above-identified deficiencies in the art or needs for improvement, the present invention provides a Ni-based alloy3(HITP)2The preparation method of the field effect transistor of the conductive MOF film is characterized in that a transistor device comprising a source, a drain, a grid and a channel is arranged on Ni3(HITP)2In the reaction solution, Ni is obtained by in-situ growth at the channel of the transistor device by a solid-liquid interface method3(HITP)2Film to obtain Ni-based film3(HITP)2Field effect transistor of conductive MOF film, thereby solving the prior art Ni-based3(HITP)2The preparation method of the field effect transistor of the conductive MOF film has the technical problems of weak combination with a substrate, poor contact, poor uniformity and the like.
To achieve the above object, according to one aspect of the present invention, there is provided a Ni-based alloy3(HITP)2The preparation method of the field effect transistor of the conductive MOF film is characterized in that a transistor device comprising a source, a drain, a grid and a channel is arranged in Ni3(HITP)2In the reaction solution, Ni is obtained by in-situ growth at the channel of the transistor device by a solid-liquid interface method3(HITP)2Film to obtain Ni-based film3(HITP)2A field effect transistor of a conductive MOF film.
Preferably, the transistor device comprising the source, drain and gate terminals and the channel is obtained by the following method: the photoresist is obtained by performing mask ultraviolet lithography, magnetron sputtering deposition electrode and organic solvent photoresist removal on a silicon dioxide/silicon substrate in sequence.
Preferably, a transistor device comprising a source, a drain, a gate and a channel is placed on Ni3(HITP)2Before the reaction solution, the method also comprises the following steps: the transistor device is treated in an ozone environment to increase the number of hydroxyl groups on the surface of the device by ozone treatment.
Preferably, the Ni3(HITP)2The reaction solution is obtained by mixing 0.5-2.5 mg/mL of nickel chloride hexahydrate solution, 0.3-1.65 mg/mL of hexaaminotriphenylene solution and an alkaline reagent according to the volume ratio of 50:50 (3-35); the alkaline reagent is ammonia water or hydrazine hydrate.
Preferably, the Ni3(HITP)2The reaction solution was obtained by the following method: mixing 0.5-2.5 mg/mL of nickel chloride hexahydrate solution with ammonia water, and dropwise adding the mixture into 0.3-1.65 mg/mL of hexaaminotriphenylene solution under the stirring condition.
Preferably, the transistor device comprising the source, the drain, the gate and the channel is suspended in the Ni with the side with the channel facing downwards3(HITP)2Reacting the solution surface to grow Ni in situ at the channel of the transistor device3(HITP)2A film.
Preferably, a transistor device comprising a source, a drain, a gate and a channel is arranged on Ni3(HITP)2Standing and reacting for 5-180 minutes in the reaction solution at 40-70 ℃ to obtain Ni through in-situ growth at the channel of the transistor device3(HITP)2A film.
Preferably, the preparation method further comprises the following steps: ni obtained by in-situ growth3(HITP)2The film is washed by ethanol and deionized water in sequence and then dried for 2-12 hours at the temperature of 60-100 ℃.
Preferably, a transistor device comprising a source, a drain, a gate and a channel is arranged on Ni3(HITP)2In the reaction solution, the other parts of the transistor device except the channel are covered by a mask, and the mask is removed after the in-situ growth reaction is finishedSo that Ni is grown in-situ only at the channel of the transistor device3(HITP)2A film.
In general, to overcome this problem, Ni is added3(HITP)2The invention provides a method for obtaining Ni based on solid-liquid interface method in-situ growth3(HITP)2The preparation method of the conductive MOF film field effect transistor provides a new idea for the development of the MOF-based field effect transistor. Compared with the prior art, the technical scheme of the invention can obtain the following beneficial effects:
(1) the invention provides a Ni-based alloy3(HITP)2The preparation method of the field effect transistor of the conductive MOF film is characterized in that a transistor device comprising a source, a drain, a grid and a channel is arranged on Ni3(HITP)2In the reaction solution, Ni is obtained by in-situ growth at the channel of the transistor device by a solid-liquid interface method3(HITP)2Film to obtain Ni-based film3(HITP)2A field effect transistor of a conductive MOF film. The method is due to Ni3(HITP)2The reaction solution is grown in situ on the surface of the channel material through a solid-liquid interface to obtain the Ni-based material3(HITP)2The film has the structure of the conductive MOF, so that the film is firmly combined with a substrate at a channel, has good contact and good uniformity, and the carrier transmission performance and the sensitivity of the field effect transistor manufactured correspondingly are also improved to a greater extent.
(2) Ni provided by the invention3(HITP)2The preparation method of the conductive MOF film field effect transistor comprises the steps of firstly preparing a basic field effect transistor device substrate by using the technologies of ultraviolet lithography, magnetron sputtering deposition of electrodes, acetone photoresist removal and the like, and then reversely suspending the device in Ni3(HITP)2In the reaction solution, Ni with complete large piece and uniform thickness is obtained by in-situ growth at the channel of the field effect transistor3(HITP)2And (5) testing the electrical property of the film.
(3) The invention has good field effect performance, and can regulate and control Ni by controlling reaction time3(HITP)2Film and based on Ni3(HITP)2Performance of thin film field effect transistors.
Drawings
FIG. 1 shows Ni produced by the present invention3(HITP)2A field effect transistor device diagram;
FIG. 2(a) shows Ni prepared in example 1 of the present invention3(HITP)2Scanning electron micrographs at the channel of the field effect transistor; FIG. 2(b) shows Ni prepared in example 13(HITP)2Scanning electron micrographs of the film; FIG. 2(c) shows Ni prepared in example 13(HITP)2Scanning electron micrographs of the cross section of the film (reaction 30 min); FIG. 2(d) shows Ni prepared in example 23(HITP)2Scanning electron micrograph of cross section of film (reaction 15 min).
FIG. 3(a) shows Ni prepared in example 1 of the present invention3(HITP)2X-ray photoelectron spectrum of the film (reaction time 30 min); FIG. 3(b) shows Ni prepared in example 23(HITP)2X-ray photoelectron spectrum of the film (reaction time 15 min).
FIG. 4(a) shows Ni prepared in example 1 of the present invention3(HITP)2Output characteristic curve chart of film (reaction 30 min); FIG. 4(b) shows Ni prepared in example 13(HITP)2Output characteristic curve chart of film (reaction 15 min); FIG. 4(c) shows Ni prepared in example 23(HITP)2Transfer characteristic curve of film (reaction 30 min); FIG. 4(d) shows Ni prepared in example 23(HITP)2Transfer characteristic of the film (reaction 15 min).
FIG. 5 shows Ni prepared in example 1 of the present invention3(HITP)2Transfer curve analysis of the film (reaction 30 min).
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The invention provides a Ni-based alloy3(HITP)2The preparation method of the field effect transistor of the conductive MOF film comprises the step of placing a transistor device comprising a source, a drain, a grid and a channel in Ni3(HITP)2In the reaction solution, Ni is obtained by in-situ growth at the channel of the transistor device by a solid-liquid interface method3(HITP)2Film to obtain Ni-based film3(HITP)2A field effect transistor of a conductive MOF film.
In some embodiments, the transistor device comprising the source, the drain, the gate and the channel is obtained by the following method: the photoresist is obtained by sequentially carrying out mask ultraviolet lithography, magnetron sputtering deposition of a titanium/gold electrode and acetone photoresist removal on a silicon dioxide/silicon substrate. The silicon dioxide/silicon substrate is a silicon wafer which takes silicon as a substrate and has silicon dioxide with the thickness of 280-300 nm on the surface of the silicon substrate.
In some embodiments, the transistor device comprising the source, the drain, the gate and the channel is obtained by the following method: and (3) selecting a silicon wafer with the thickness of 280-300 nm of silicon dioxide, and soaking the silicon wafer in acetone, ethanol and deionized water respectively for ultrasound. Spin coating BP212-37S photoresist on the surface of a silicon wafer, pre-baking, carrying out ultraviolet lithography and development according to a mask, and carrying out post-baking after nitrogen blow drying. A titanium layer and a gold electrode layer are sequentially deposited on a silicon wafer substrate by adopting magnetron sputtering, and the length of a channel between a source end and a drain end is 50 mu m and the width is 2000 mu m. And finally, soaking the substrate in acetone for ultrasonic treatment, and washing the surface of the device with ethanol and water.
In some embodiments, the transistor device containing source, drain, gate and channel is placed in Ni3(HITP)2Before the reaction solution, the method also comprises the following steps: treating the transistor device in an ozone environment, such as an ultraviolet ozone machine, by increasing the number of hydroxyl groups on the surface of the silicon wafer to enhance the formation of Ni-based metal oxide3(HITP)2Adsorption of conductive MOF films. Ultraviolet ozonizer decomposes oxygen into ozone under ultraviolet lightOzone oxidizes the substrate, so that organic impurities on the silicon wafer can be removed, and hydroxyl groups can be generated on the silicon wafer.
Ni of the invention3(HITP)2The film growth at the channel of the transistor device is due to Ni on the one hand3(HITP)2By its nature, Ni is due to coordination of HITP ligands to the Ni metal center and pi-pi interactions between adjacent stacked layers3(HITP)2The 2D structure of (a) is formed by self-assembly; on the other hand, because of different surface energies of a solid-liquid interface, the number of hydroxyl groups on the surface of the silicon wafer is increased through ozone treatment so as to enhance the adsorption effect on the generated MOF material, and in addition, a gold electrode which is pre-patterned on the silicon wafer has higher activity and can promote Ni in the reaction process3(HITP)2So that Ni is grown3(HITP)2A layer of MOF film is gradually stacked on the silicon wafer.
In some embodiments, the spin-coated photoresist has a thickness of 1-2 μm; the pre-drying condition is 100 ℃ (hot plate) for 2-3 min; the postbaking condition is 120 ℃ (hot plate) for 2-3 min; the thickness of the titanium layer is 5-10 nm, and the thickness of the gold layer is 80-100 nm; and performing acetone ultrasonic treatment for 30-60 s during photoresist stripping.
In some embodiments, the Ni3(HITP)2The reaction solution is obtained by mixing 0.5-2.5 mg/mL of nickel chloride hexahydrate solution, 0.3-1.65 mg/mL of hexaaminotriphenylene solution and an alkaline reagent according to the volume ratio of 50:50 (3-35); the alkaline reagent is ammonia water or hydrazine hydrate.
In some embodiments, in order to better control the morphology of the formed MOF structure, 0.5-2.5 mg/mL of nickel chloride hexahydrate solution is mixed with ammonia water, and then dropwise added into 0.3-1.65 mg/mL of hexaaminotriphenylene solution under the stirring condition to obtain the Ni3(HITP)2And (3) reaction solution. Wherein the volume ratio of the nickel chloride hexahydrate solution to the hexaaminotriphenylene solution to the ammonia water is 50:50 (3-35).
In some embodiments, a transistor device comprising a source, a drain, a gate and a channel is suspended in the Ni with a channel side facing down3(HITP)2Reaction solution meterFace such that Ni grows in situ at a channel of the transistor device3(HITP)2A film.
In some embodiments, a transistor device comprising a source, a drain, a gate and a channel is placed in Ni3(HITP)2Standing and reacting for 5-180 minutes in the reaction solution at 40-70 ℃ to obtain Ni through in-situ growth at the channel of the transistor device3(HITP)2A film.
In some embodiments, further comprising the step of: ni obtained by in-situ growth3(HITP)2The film is washed by ethanol and deionized water in sequence and then dried for 2-12 hours at 35-100 ℃.
In some embodiments, the nickel chloride hexahydrate and the hexaaminotriphenylene are respectively dissolved in deionized water, so that the concentration of the nickel chloride hexahydrate is 0.5-2.5 mg/mL, and the concentration of the hexaaminotriphenylene is 0.3-1.65 mg/mL. Slowly dripping 0.3-0.35 mL of ammonia water into the nickel chloride solution while stirring, slowly dripping the mixed solution of the nickel chloride and the ammonia water into the hexaaminotriphenylene solution after fully stirring, stirring for 5-10 min, using tweezers to enable the surface of the prepared transistor device with an electrode to face downwards, suspending the transistor device on the surface of the solution, and then placing the transistor device in a water bath at the temperature of 40-70 ℃ for reaction for 5-180 min. And stopping heating after the reaction is finished, cooling to room temperature, taking out the field effect transistor, washing the surface of the device for multiple times by using ethanol and deionized water, and drying in a vacuum oven at 35-100 ℃ for 2-12 h.
In some embodiments, a transistor device comprising a source, a drain, a gate and a channel is placed in Ni3(HITP)2In the reaction solution, the other parts of the transistor device except the channel are covered by a mask, and the mask is uncovered after the in-situ growth reaction is finished, so that Ni is obtained only by in-situ growth at the channel of the transistor device3(HITP)2A film.
In some embodiments of the invention, Ni is grown in situ3(HITP)2The detection method of the field effect transistor of the conductive MOF film comprises the following detection steps:
(1) excess material around the upper electrode of the MOF field effect transistor device prepared by the invention is scratched by a diamond pen, and a small area of silicon dioxide on the surface of the device far away from the electrode is scratched to expose the lower silicon layer to be used as a gate electrode contact.
(2) The transfer and output characteristics of the MOF field effect transistor devices were tested using a 4200-SCS semiconductor analyzer in combination with a three-terminal probe station.
The following are examples:
example 1
The preparation method of the field effect transistor comprises the following specific steps:
step A: and (3) selecting a silicon wafer with the thickness of 280-300 nm of silicon dioxide, and soaking the silicon wafer in acetone, ethanol and deionized water respectively for ultrasound. Spin coating BP212-37S photoresist on the surface of a silicon wafer, pre-baking, carrying out ultraviolet lithography and development according to a mask, and carrying out post-baking after nitrogen blow drying. A5-10 nm titanium layer and an 80-100 nm gold electrode layer are sequentially deposited on a silicon wafer substrate by adopting magnetron sputtering, the length of a channel between a source terminal and a drain terminal is 50 mu m, and the width of the channel is 2000 mu m. And finally, soaking the substrate in acetone for 30-60 seconds, and washing the surface of the device with ethanol and water to obtain the device shown in the figure 1.
And B: respectively dissolving nickel chloride hexahydrate and hexaaminotriphenylene into deionized water to enable the concentration of the nickel chloride hexahydrate to be 2mg/mL and the concentration of the hexaaminotriphenylene to be 1.32mg/mL, slowly dropwise adding 0.3mL of ammonia water into the nickel chloride solution under stirring, slowly dropwise adding the mixed solution of the nickel chloride and the ammonia water into the hexaaminotriphenylene solution after fully stirring, stirring for 5-10 min, enabling the surface of the field effect transistor prepared in the step A with the electrode to face downwards by using tweezers to be suspended on the surface of the solution, and then placing the field effect transistor in a water bath at 65 ℃ for reaction for 30 min. And stopping heating after the reaction is finished, cooling to room temperature, taking out the field effect transistor, washing the surface of the device for multiple times by using ethanol and deionized water, and drying in a vacuum oven at 35 ℃ for 6 hours.
The prepared device channel morphology is shown in a scanning electron microscope image of FIG. 2 (a): visible Ni3(HITP)2The material grows in a channel between the two gold electrodes, and the structural morphology of the electrodes is still intact and is not damaged in the reaction process; ni3(HITP)2The film morphology is shown in FIG. 2 (b): shows that Ni is obtained by in-situ growth on a silicon wafer substrate3(HITP)2Is formed by stacking laminated structures; the cross-sectional profile is shown in FIG. 2 (c): obtained Ni3(HITP)2The thickness of the film was approximately 263 nm; the X-ray photoelectron spectrum is shown in FIG. 3 (a): to obtain Ni3(HITP)2And the resonance peaks of C atom (284.80 eV), N atom (534.04eV), O atom (534.04eV) and Ni atom (855.66eV) of the water-guest molecule, and it was confirmed that Ni can be prepared by the in-situ growth method3(HITP)2。
Example 2
The other steps are the same as example 1, except that:
step B': respectively dissolving nickel chloride hexahydrate and hexaaminotriphenylene into deionized water to ensure that the concentration of the nickel chloride hexahydrate is 2mg/mL and the concentration of the hexaaminotriphenylene is 1.32 mg/mL. And (2) slowly dripping 0.3mL of ammonia water into the nickel chloride solution under stirring, fully stirring, slowly dripping the mixed solution of the nickel chloride and the ammonia water into the hexaaminotriphenylene solution, stirring for 5-10 min, using tweezers to enable the surface of the field effect transistor prepared in the step (A) with the electrode to face downwards to be suspended on the surface of the solution, and then placing the solution in a water bath at 65 ℃ for reaction for 15 min. And stopping heating after the reaction is finished, cooling to room temperature, taking out the field effect transistor, washing the surface of the device for multiple times by using ethanol and deionized water, and drying in a vacuum oven at 35 ℃ for 6 hours. The cross-sectional morphology of the prepared device is shown in FIG. 2(d), and the X-ray photoelectron spectrum is shown in FIG. 3(b), and it can be seen that the shortening of the reaction time can change Ni3(HITP)2The thickness of the film (about 213 nm) but the content of Ni bound to HATP ligands decreased because Ni ions and HATP ligands did not react sufficiently in a short time.
Ni-based alloy prepared as described above3(HITP)2The method for testing the field effect transistor of the conductive MOF film comprises the following specific steps:
(1) excess material around the top electrode of the MOF fet device is scratched away with a diamond stylus and a small area of silicon dioxide on the surface of the device away from the electrode is scratched away to expose the underlying silicon layer as a gate electrode contact.
(2) The electrical performance of the MOF field effect transistor devices was tested using a 4200-SCS semiconductor analyzer in combination with a three terminal probe station.
(3) At the output characteristic curve Ids-VdsIn the test of (2), a gate voltage V is setgsChanging from-10V to 10V in 5V steps, drain-source voltage VdsThe test range of (1) is 0-2V, and the test result is shown in the figure; at the transfer characteristic curve Ids-VgsIn the test, the drain-source voltage is set to be-1V, and the grid voltage is set to be VgsThe test range of (A) is 40V to-40V.
(4) Ni prepared in example 13(HITP)2The output characteristic curve of the field effect transistor is shown in fig. 4 (a): indicating that the field effect transistor can be made by changing the gate voltage VgsThe output current is well regulated and controlled (from-10V to 10V), and the transfer characteristic curve is shown in figure 4 (b): the graphene-based field effect transistor has bipolar performance similar to that of a graphene-based field effect transistor; to investigate Ni further3(HITP)2The performance of the field effect transistor, the transfer characteristic curve analysis diagram of which is shown in fig. 5: calculating to obtain Ni3(HITP)2Current switching ratio of field effect transistor is Ion/Ioff＝1.72×102The carrier mobility μ is 31.63cm2V.s, and has better field effect performance.
(5) Ni prepared in example 23(HITP)2The output characteristic curve of the field effect transistor is shown in fig. 4 (c): output current IdsIs still subjected to the gate voltage VgsBut is generally reduced as compared with the current in FIG. 4(a) because of Ni caused by the shortened reaction time3(HITP)2The density of the film is reduced, and the transfer capability of a current carrier is also reduced; the transfer characteristic curve is shown in FIG. 4 (d): the field effect transistor still exhibits bipolar performance.
Example 3
Respectively dissolving nickel chloride hexahydrate and hexaaminotriphenylene in deionized water to ensure that the concentration of the nickel chloride hexahydrate is 2mg/mL and the concentration of the hexaaminotriphenyleneAnd (2) slowly adding 0.35mL of ammonia water into the nickel chloride solution while stirring, slowly adding the mixed solution of the nickel chloride and the ammonia water into the hexaaminotriphenylene solution while stirring fully, stirring for 5-10 min, suspending the surface of the field effect transistor with the electrode, which is prepared in the step A of example 1, downwards on the surface of the solution by using tweezers, and then placing the solution in a water bath at 65 ℃ for reaction for 60 min. Stopping heating after the reaction is finished, cooling to room temperature, taking out the field effect transistor, washing the surface of the device with ethanol and deionized water for multiple times, placing the device in a vacuum oven, drying for 2 hours at the temperature of 100 ℃, and preparing the Ni3(HITP)2A field effect transistor.
Example 4
Respectively dissolving nickel chloride hexahydrate and hexaaminotriphenylene into deionized water to ensure that the concentration of the nickel chloride hexahydrate is 2.3mg/mL and the concentration of the hexaaminotriphenylene is 1.5mg/mL, slowly dropwise adding 0.3mL of ammonia water into a nickel chloride solution under stirring, slowly dropwise adding a mixed solution of the nickel chloride and the ammonia water into a hexaaminotriphenylene solution under stirring for 5-10 min, using tweezers to enable one surface, with an electrode, of the field effect transistor prepared in the step A of the embodiment 1 to face downwards, to be suspended on the surface of the solution, and then placing the solution in a water bath at 65 ℃ for reaction for 120 min. And stopping heating after the reaction is finished, cooling to room temperature, taking out the field effect transistor, washing the surface of the device with ethanol and deionized water for multiple times, and drying in a vacuum oven at 100 ℃ for 2 hours. Preparation of Ni3(HITP)2A field effect transistor.
The method provided by the invention is based on in-situ grown Ni3(HITP)2The preparation method of the field effect transistor of the conductive MOF film has at least the following beneficial effects:
(1) the Ni-based alloy provided by the invention3(HITP)2In the preparation method of the field effect transistor, an electrode is firstly deposited on the surface of a substrate, and then Ni is grown in situ by a solid-liquid interface method3(HITP)2The film, fig. 2(a) shows that the method does not destroy the electrode morphology of the device, and generates a large-scale complete MOF film composed of nanosheets at the channel.
(2) The Ni-based alloy provided by the invention3(HITP)2Field effect crystal ofIn the preparation method of the body tube, Ni can be regulated and controlled by controlling the reaction duration3(HITP)2The properties of the thin film are even those of a field effect transistor. FIG. 2(c), (d) shows that the length of the reaction time influences the thickness of the MOF; FIGS. 3(a), (b) show the effect of reaction duration on Ni3(HITP)2The content of Ni ions participating in coordination in the film; FIGS. 3(a), (b), (c), (d) show that the effect of the length of the reaction is based on Ni3(HITP)2Electrical performance of thin film field effect transistors.
(3) The Ni-based alloy provided by the invention3(HITP)2The field effect transistor has good field effect performance by regulating and controlling the grid voltage VgsPlays a role in regulating and controlling the drain-source current IdsThe function of (1); its threshold voltage VthIs 33.5V; the carrier mobility mu is 31.63cm2V.s, current on-off ratio Ion/IoffIs 1.72X 102。
(4) The Ni-based alloy provided by the invention3(HITP)2The field effect transistor has simple and convenient preparation method and good performance.
In conclusion, the embodiments of the present invention have good field effect performance, and Ni can be controlled by controlling the reaction time3(HITP)2And based on Ni3(HITP)2Performance of field effect transistors conducting MOF thin films.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims (8)

1. Based on Ni3(HITP)2The preparation method of the field effect transistor of the conductive MOF film is characterized in that a transistor device comprising a source, a drain, a grid and a channel is arranged in Ni3(HITP)2In the reaction solution, Ni is obtained by in-situ growth at the channel of the transistor device by a solid-liquid interface method3(HITP)2Film to obtain Ni-based film3(HITP)2A field effect transistor conducting a MOF film; placing a transistor device containing a source, a drain, a grid and a channel in Ni3(HITP)2Before the reaction solution, the method also comprises the following steps: the transistor device is treated in an ozone environment to increase the number of hydroxyl groups on the surface of the device by ozone treatment.
2. The method according to claim 1, wherein the transistor device comprising the source, drain and gate terminals and the channel is obtained by: the photoresist is obtained by performing mask ultraviolet lithography, magnetron sputtering deposition electrode and organic solvent photoresist removal on a silicon dioxide/silicon substrate in sequence.
3. The method of claim 1, wherein the Ni is3(HITP)2The reaction solution is obtained by mixing 0.5-2.5 mg/mL of nickel chloride hexahydrate solution, 0.3-1.65 mg/mL of hexaaminotriphenylene solution and an alkaline reagent according to the volume ratio of 50:50 (3-35); the alkaline reagent is ammonia water or hydrazine hydrate.
4. The method of claim 3, wherein the Ni is3(HITP)2The reaction solution was obtained by the following method: mixing 0.5-2.5 mg/mL of nickel chloride hexahydrate solution with ammonia water, and dropwise adding the mixture into 0.3-1.65 mg/mL of hexaaminotriphenylene solution under the stirring condition.
5. The method according to claim 1, wherein a transistor device comprising a source, a drain and a gate and a channel is suspended in the Ni with a side with the channel facing down3(HITP)2Reacting the solution surface to grow Ni in situ at the channel of the transistor device3(HITP)2A film.
6. The method of claim 5, wherein a transistor device comprising a source, a drain, a gate and a channel is placed in the Ni3(HITP)2In the reaction solution at 40 ℃ toStanding and reacting for 5-180 minutes at 70 ℃ to obtain Ni through in-situ growth at a channel of the transistor device3(HITP)2A film.
7. The method of claim 1, further comprising the steps of: ni obtained by in-situ growth3(HITP)2The film is washed by ethanol and deionized water in sequence and then dried for 2-12 hours at the temperature of 60-100 ℃.
8. The method of claim 1, wherein a transistor device comprising a source, a drain, a gate and a channel is placed in the Ni3(HITP)2In the reaction solution, the other parts of the transistor device except the channel are covered by a mask, and the mask is uncovered after the in-situ growth reaction is finished, so that Ni is obtained only by in-situ growth at the channel of the transistor device3(HITP)2A film.
CN201910700639.3A 2019-07-31 2019-07-31 Based on Ni3(HITP)2Preparation method of field effect transistor of conductive MOF film Active CN110429032B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910700639.3A CN110429032B (en) 2019-07-31 2019-07-31 Based on Ni3(HITP)2Preparation method of field effect transistor of conductive MOF film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910700639.3A CN110429032B (en) 2019-07-31 2019-07-31 Based on Ni3(HITP)2Preparation method of field effect transistor of conductive MOF film

Publications (2)

Publication Number Publication Date
CN110429032A CN110429032A (en) 2019-11-08
CN110429032B true CN110429032B (en) 2020-11-17

Family

ID=68411735

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910700639.3A Active CN110429032B (en) 2019-07-31 2019-07-31 Based on Ni3(HITP)2Preparation method of field effect transistor of conductive MOF film

Country Status (1)

Country Link
CN (1) CN110429032B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113437219B (en) * 2021-06-09 2022-04-26 中国科学院合肥物质科学研究院 Based on Ni3(HHTP)2Field effect transistor of conductive film and preparation method thereof
CN113791130B (en) * 2021-08-27 2023-03-10 华中科技大学 Ni 3 (HITP) 2 Field effect transistor biosensor and preparation method thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9857328B2 (en) * 2014-12-18 2018-01-02 Agilome, Inc. Chemically-sensitive field effect transistors, systems and methods for manufacturing and using the same

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Controllable Synthesis of SERS-Active Magnetic Metal−Organic Framework-Based Nanocatalysts and Their Application in Photoinduced Enhanced Catalytic Oxidation;Xiaowei Ma, et al;《ACS Applied Materials & Interfaces》;20180801;第10卷(第30期);第25726-25736页 *
Large-Area Preparation of Crack-Free Crystalline Microporous Conductive Membrane to Upgrade High Energy Lithium–Sulfur Batteries;Ying Zang, et al;《Advanced Energy Materials》;20181105;第8卷(第31期);第1802052页 *
Porous Field-Effect Transistors Based on a Semiconductive Metal−Organic Framework;Guodong Wu, et al;《Journal of the American Chemical Society》;20170201;第139卷(第4期);第1360-1363页 *

Also Published As

Publication number Publication date
CN110429032A (en) 2019-11-08

Similar Documents

Publication Publication Date Title
WO2018010327A1 (en) Metal ion modified black phosphorus, preparation method therefor and application thereof
Morant‐Giner et al. Prussian blue@ MoS2 layer composites as highly efficient cathodes for sodium‐and potassium‐ion batteries
CN110429032B (en) Based on Ni3(HITP)2Preparation method of field effect transistor of conductive MOF film
JP6192577B2 (en) Graphene-based field effect transistor
TWI631604B (en) Method of manufacturing n-doped graphene and electrical component using nh4f, and graphene and electrical component thereby
CN106198674B (en) A kind of mesoporous graphene preparation process and it is based on mesoporous graphene field effect transistor biosensor
TWI544645B (en) Thin film transistor and method of making the same
CN102420288B (en) Organic field effect transistor with dielectric modification layer and preparation method thereof
KR101816800B1 (en) Method of preparing metal nano wire and 3D metal nano catalyst
CN108511604B (en) Dopamine-based self-polymerization electric storage material, preparation method thereof and application of dopamine-based self-polymerization electric storage material in electric storage device
TW201205816A (en) Method of forming a semiconductor device
TW201036073A (en) Method for manufacturing transistor, transistor, and sputtering target
CN111725001A (en) Nitrogen-doped hollow porous carbon applied to supercapacitor and preparation method thereof
Mazzotta et al. Facile synthesis of 3D flower-like Pt nanostructures on polypyrrole nanowire matrix for enhanced methanol oxidation
CN103767699B (en) A kind of neuron probe based on carbon nano tube/conducting polymer and preparation method thereof
KR101999488B1 (en) Method for removal of polymer residues on a graphene film
KR101190219B1 (en) Method for fabricating few-layered graphene oxide-based reduced graphene oxide field effect tansistor based on bottom contacts
CN208548341U (en) Grapheme transistor circuit device
CN109142466B (en) Gas-sensitive thin film sensor and method for obtaining graphene oxide and graphene composite structure by CVD graphene pollution-free transfer process
CN109920736A (en) Hydrogen terminal Buddha's warrior attendant ground mass two-step method dielectric layer field effect transistor and preparation method thereof
WO2019072034A1 (en) Selective electrochemical deposition method for nano-scale prussian blue thin film
Hoffmann et al. Templating of polycrystalline ZnO with DNA and its performance in field‐effect transistors
KR101441890B1 (en) Menufacture of counter electrodes containing metal/graphene composites
CN109768251A (en) A kind of preparation method of the anode material of lithium battery of surface coating decoration
CN105261590B (en) Method for filling three-dimensional glass through hole with high depth-to-width ratio

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant